CN113990998A - Wavelength conversion matrix and manufacturing method thereof - Google Patents
Wavelength conversion matrix and manufacturing method thereof Download PDFInfo
- Publication number
- CN113990998A CN113990998A CN202111285591.8A CN202111285591A CN113990998A CN 113990998 A CN113990998 A CN 113990998A CN 202111285591 A CN202111285591 A CN 202111285591A CN 113990998 A CN113990998 A CN 113990998A
- Authority
- CN
- China
- Prior art keywords
- wavelength conversion
- light
- layer
- conversion layer
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention discloses a wavelength conversion matrix and a manufacturing method thereof. The manufacturing method of the wavelength conversion matrix comprises the following steps: providing a substrate, and covering a wavelength conversion layer on the surface of the substrate; covering a mask on the surface of the wavelength conversion layer; and removing the rest part of the wavelength conversion layer which is not protected by the mask by adopting a dry etching mode, thereby forming a wavelength conversion matrix. The invention realizes the imaging of the wavelength conversion material by a dry etching method, thereby obtaining the micro display with high resolution and high pixel density.
Description
Technical Field
The invention particularly relates to a wavelength conversion matrix and a manufacturing method thereof, belonging to the technical field of micro-display.
Background
In the prior art, the manufacturing process of a monochromatic Micro-LED Micro-display device is researched a lot, and the manufacturing process is mature. The preparation of full-color Micro-LED displays mainly adopts three-primary-color LED chips for assembly at present, and the three-primary-color assembly faces huge difficulties in mass transfer.
The scheme of the fluorescent powder light conversion layer and the quantum dot color conversion layer is a more convenient and feasible method for realizing full-color display. The fluorescent powder has low efficiency, large half-peak width, poor color purity and poor display effect, and meanwhile, the fluorescent powder has large particles and is not suitable for micro-display with small pixel points; the quantum dot material has the advantages of concentrated light emission spectrum, high color purity, simple and easy adjustment of light emission color through the size, structure or components of the quantum dot material, and the like, and the color gamut and color reduction capability of the display device can be effectively improved by applying the quantum dot material to the display device by utilizing the advantages.
Prior art 1(US 9904097B 2, US8459855B2) discloses a method for manufacturing a wavelength conversion matrix, as shown in fig. 1a (in the figure, 11 is a driving back plate, 121 is a black partition wall, 131 is a transparent partition wall, 132/133 is a pad, and 141/142/143 is a red, green, and blue quantum dot film), which uses a transparent photoresist to build a partition wall structure, thereby helping to limit the distribution of the quantum dot film made by an air-jet method, specifically, a wavelength conversion material is directly coated on a display panel and patterned, wherein a photoluminescent material is dispersed in a solvent with low viscosity and then printed on the display panel by an air-jet method. However, the thickness of the material is difficult to accumulate due to the diffusion of the low-viscosity solvent, so that the photo-induced conversion is insufficient to affect the display quality, and further, the printing process requires high alignment accuracy and is time-consuming, so that the production efficiency of the printing process may be problematic as the resolution and pixel density of the micro-display screen are continuously increased.
As shown in fig. 1B, prior art 2(US9690135B2) discloses that a wavelength conversion material is coated on a transparent substrate and patterned, and then covered on a display panel by means of an inverted crystal package. The photoluminescence material is dispersed in the photoresist and patterned by a photoetching method, so that the production efficiency is greatly improved, and the light conversion efficiency is also improved due to the improvement of the material thickness. However, the resolution is limited due to the severe scattering phenomenon of the light conversion material, and in order to improve the resolution to obtain a pattern of 5um or less, the concentration of the photoluminescent material must be controlled to a low level, but the corresponding absorption and conversion characteristics are degraded, so that it is very challenging to balance the resolution and the conversion efficiency in this method.
Disclosure of Invention
The present invention is directed to a wavelength conversion matrix, a method for fabricating the same, and a micro-display device, which overcome the disadvantages of the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a method for manufacturing a wavelength conversion matrix, which comprises the following steps:
providing a substrate, and covering a wavelength conversion layer on the surface of the substrate;
covering a mask on the surface of the wavelength conversion layer;
and removing the rest part of the wavelength conversion layer which is not protected by the mask by adopting a dry etching mode, thereby forming a wavelength conversion matrix.
An embodiment of the present invention further provides a wavelength conversion matrix, including: the wavelength conversion layer comprises a mask area and a non-mask area, the non-mask area is a hollow area, and the wavelength conversion layer can superpose self-luminous pixel points of the display to emit specific light wavelength light.
Compared with the prior art, the invention has the advantages that:
1) the graph of the wavelength conversion layer of the manufacturing method of the wavelength conversion matrix is obtained by dry etching, and the etching mask is defined by using high-resolution photoresist through other photoetching steps and metallization steps, so that the resolution of the obtained wavelength conversion matrix is higher;
2) the photoluminescence material in the method for manufacturing the wavelength conversion matrix provided by the embodiment of the invention can be dispersed in the polymer film material at a relatively high concentration, and on the basis, the relatively thick photoluminescence material film can be realized by adjusting the technological parameters of photoetching and dry etching, so that high conversion efficiency is obtained.
Drawings
Fig. 1a and 1b are schematic structural diagrams illustrating a manufacturing principle of a wavelength conversion matrix in the prior art;
FIG. 2 is a schematic diagram of a wavelength conversion matrix provided in an exemplary embodiment of the invention;
FIGS. 3 a-3 k are schematic diagrams of a manufacturing process of a wavelength conversion matrix according to an exemplary embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a distribution pattern of self-luminous pixel points 20 provided in an exemplary embodiment of the present invention;
fig. 5a, 5b, and 5c are schematic diagrams of arrangement structures of red, green, and blue pixels in a full-color pixel.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
The embodiment of the invention provides a method for manufacturing a wavelength conversion matrix, which comprises the following steps:
providing a substrate, and covering a wavelength conversion layer on the surface of the substrate;
covering a mask on the surface of the wavelength conversion layer;
and removing the rest part of the wavelength conversion layer which is not protected by the mask by adopting a dry etching mode, thereby forming a wavelength conversion matrix.
In a specific embodiment, the mask is a hard mask, and the hard mask is any one or a combination of two or more of a dielectric mask, a photoresist mask and a metal mask, but is not limited thereto.
In one embodiment, the material of the dielectric mask includes, but is not limited to, any one or a combination of two or more of titanium dioxide, zirconium dioxide, silicon nitride, and aluminum oxide.
In one embodiment, the material of the metal mask includes any one or a combination of two or more of cadmium, aluminum, nickel, gold, copper, chromium, titanium, and platinum, but is not limited thereto.
In one embodiment, the material of the photoresist mask includes a positive photoresist or a negative photoresist.
In a specific embodiment, the dry etching manner includes, but is not limited to, physical etching, chemical etching, or physicochemical etching.
In a specific embodiment, the physical etching includes ion beam etching, and the etching gas used in the ion beam etching includes an inert gas, such as argon, but is not limited thereto.
In a specific embodiment, the chemical etching includes plasma etching, and the etching gas used in the plasma etching includes fluorine-containing gas, such as sulfur hexafluoride, carbon tetrafluoride, trifluoromethane, etc., but is not limited thereto.
In a specific embodiment, the physical chemical etching includes reactive ion etching, and the etching gas used in the reactive ion etching includes a gas containing fluorine, chlorine, or sulfur, such as, but not limited to, any one or a combination of two or more of chlorine, boron trichloride, sulfur hexafluoride, carbon tetrafluoride, and an inert gas.
In a specific embodiment, the manufacturing method further includes:
covering a passivation layer on the surface of the substrate, filling the passivation layer in the gap of the wavelength conversion matrix, and making the surface of the passivation layer flush with or lower than the surface of the wavelength conversion layer.
In a specific embodiment, the manufacturing method specifically includes:
covering a first wavelength conversion layer on the surface of the substrate;
arranging a first mask in a preset area on the surface of the first wavelength conversion layer;
removing the rest part of the first wavelength conversion layer which is not protected by the first mask by adopting a dry etching mode, thereby forming the wavelength conversion matrix; the first wavelength conversion layer can superpose a first self-luminous pixel point of the display to emit first light wavelength light.
In a specific embodiment, the manufacturing method further includes:
before the first wavelength conversion layer is covered, a first filter layer is arranged on the surface of the substrate;
the first wavelength conversion layer is at least covered with the first filter layer, and the first mask corresponds to the first filter layer;
wherein the first optical filter layer is capable of passing the first optical wavelength light.
In a specific embodiment, the manufacturing method further includes:
after removing the rest part of the first wavelength conversion layer which is not protected by the first mask by adopting a dry etching mode, covering a second wavelength conversion layer on the surface of the substrate;
arranging a second mask in a second area on the surface of the second wavelength conversion layer;
removing the rest part of the second wavelength conversion layer which is not protected by the second mask by adopting a dry etching mode, thereby forming the wavelength conversion matrix; the second wavelength conversion layer can superpose a second self-luminous pixel point of the display to emit second light wavelength.
In a specific embodiment, the first and second self-luminous pixel points emit light with the same or different wavelengths, the first and second wavelength conversion layers include photoluminescent materials with the same or different wavelengths, and the first light wavelength is different from the second light wavelength.
In a specific embodiment, the manufacturing method further includes: before the first wavelength conversion layer is covered, a first filter layer and a second filter layer are arranged on the surface of the substrate;
the first wavelength conversion layer is at least covered with the first filter layer, and the first mask corresponds to the first filter layer;
the second wavelength conversion layer is at least covered with the second filter layer, and the second mask corresponds to the second filter layer;
wherein the first optical filter layer is capable of passing the first optical wavelength light; the second optical filter layer is capable of passing the second optical wavelength light.
In a specific embodiment, the manufacturing method further includes:
after removing the rest part of the second wavelength conversion layer which is not protected by the second mask by adopting a dry etching mode, covering a third wavelength conversion layer on the surface of the substrate;
arranging a third mask in a third area on the surface of the third wavelength conversion layer;
and removing the rest part of the third wavelength conversion layer which is not protected by the third mask by adopting a dry etching mode so as to form the wavelength conversion matrix, wherein the third wavelength conversion layer can superpose a third self-luminous pixel point of the display to emit third light wavelength.
In a specific embodiment, the first self-luminous pixel, the second self-luminous pixel, and the third self-luminous pixel emit the same or different wavelengths of light, the first wavelength conversion layer, the second wavelength conversion layer, and the third wavelength conversion layer include the same or different photoluminescent materials, and the first wavelength of light, the second wavelength of light, and the third wavelength of light are different.
In a specific embodiment, the manufacturing method further includes:
before the first wavelength conversion layer is covered, a first filter layer, a second filter layer and a third filter layer are arranged on the surface of the substrate;
the first wavelength conversion layer is at least covered with the first filter layer, and the first mask corresponds to the first filter layer;
the second wavelength conversion layer is at least covered with the second filter layer, and the second mask corresponds to the second filter layer;
the third wavelength conversion layer is at least covered with the third filter layer, and the third mask corresponds to the third filter layer;
wherein the first optical filter layer is capable of passing the first optical wavelength light; the second filter layer is capable of passing the second optical wavelength light, and the third filter layer is capable of passing the third optical wavelength light.
In a specific embodiment, the manufacturing method further includes: removing the mask after forming the wavelength conversion matrix.
An embodiment of the present invention further provides a wavelength conversion matrix, including: the wavelength conversion layer comprises a mask area and a non-mask area, the non-mask area is a hollow area, and the wavelength conversion layer can superpose self-luminous pixel points of the display to emit specific light wavelength light.
In one embodiment, the wavelength conversion matrix includes a first wavelength conversion layer that can emit a first light wavelength light overlying a first self-emissive pixel of a display.
In one embodiment, a first optical filter layer is further disposed on the first wavelength conversion layer, and the first optical filter layer is capable of passing the first optical wavelength light.
In a specific embodiment, the wavelength conversion matrix further comprises a second wavelength conversion layer, the first wavelength conversion layer can overlap first self-luminous pixels of the display to emit first light wavelength, and the second wavelength conversion layer can overlap second self-luminous pixels of the display to emit second light wavelength;
the first self-luminous pixel point and the second self-luminous pixel point emit light with the same or different wavelengths, photoluminescent materials contained in the first wavelength conversion layer and the second wavelength conversion layer are the same or different, and the first light wavelength light and the second light wavelength light are different.
In an embodiment, a first optical filter layer and a second optical filter layer are further disposed on the first wavelength conversion layer and the second wavelength conversion layer, respectively, and the first optical filter layer can allow the first optical wavelength light to pass through, and the second optical filter layer can allow the second optical wavelength light to pass through.
In one embodiment, the wavelength conversion matrix further comprises a third wavelength conversion layer, and the third wavelength conversion layer can superpose third self-luminous pixel points of the display to emit third light wavelength;
the first self-luminous pixel point, the second self-luminous pixel point and the third self-luminous pixel point emit the same or different light wavelengths, photoluminescent materials contained in the first wavelength conversion layer, the second wavelength conversion layer and the third wavelength conversion layer are the same or different, and the first light wavelength light, the second light wavelength light and the third light wavelength light are different.
In one embodiment, a first optical filter layer, a second optical filter layer and a third optical filter layer are correspondingly disposed on the first wavelength conversion layer, the second wavelength conversion layer and the third wavelength conversion layer, respectively, wherein the first optical filter layer can allow the first optical wavelength light to pass through, the second optical filter layer can allow the second optical wavelength light to pass through, and the third optical filter layer can allow the third optical wavelength light to pass through.
In a specific embodiment, the first, second, and third filter layers include, but are not limited to, an organic color filter photoresist or an inorganic distributed dragging reflector.
In one embodiment, the wavelength conversion layer contains a wavelength conversion material comprising a photoluminescent material, a polymer film material, and a solvent.
In one embodiment, the photoluminescent material comprises a phosphor or quantum dots, and the phosphor may be yttrium aluminum garnet, cerium phosphor, (oxy) nitride phosphor, silicate phosphor and Mn4+Activated fluoride phosphor, etc., which may be group II-VI compound quantum dots (e.g., cadmium sulfide, cadmium selenide, cadmium telluride, zinc oxide, zinc selenide, zinc telluride, etc.), group III-V compound quantum dots (e.g., gallium arsenide, gallium phosphide, gallium antimonide, mercury sulfide, mercury selenide, mercury antimonide, indium arsenide, indium phosphide, indium antimonide, aluminum arsenide, aluminum phosphide, aluminum antimonide, etc.), perovskite quantum dots, of course, the photoluminescent material may also be an organic dye, etc.
In one embodiment, the polymeric film material includes, but is not limited to, acrylic, polyethylene, or resin.
In one embodiment, the solvent is at least used to assist in dissolving the photoluminescent material into the polymer film material, and the solvent is propylene glycol methyl ether acetate, toluene or alcohol, but is not limited thereto.
In a specific embodiment, a passivation layer is further disposed in the unmasked region, and a surface of the passivation layer is flush with or lower than a surface of the wavelength conversion layer.
In a specific embodiment, the material of the passivation layer includes any one or a combination of two or more of organic black matrix photoresist, color filter photoresist, and polyimide, but is not limited thereto.
It should be noted that the pixel point with self-luminescence provided with the first wavelength is an initial luminescence, which may be monochromatic light, such as ultraviolet, blue, green, etc.; of course, the light can also be bicolor light, such as ultraviolet plus blue, blue plus green, and the like; but may of course also be white light, such as red, green, blue, yellow, etc. If the initial emission contains a certain wavelength required for the micro-display to be realized, the wavelength-converting material corresponding to that wavelength may be omitted, for example, if the initial emission of the display panel (which includes the driving panel and the self-luminous pixel) is blue, the corresponding blue wavelength-converting material is not needed.
Generally, the wavelength of the light converted by the wavelength conversion layer is longer than that of the primary light, and the light having the second wavelength formed after the conversion may be monochromatic light (such as blue, green, yellow, red light, etc.) or polychromatic light (such as blue-green, blue-red, red-green, blue-green-red, etc.). For example, if the initial emission of the display panel is blue, it can be converted to a monochromatic green display using only a green wavelength converting material, although any other color combination is possible as long as the corresponding color converting material is selected.
The embodiments, implementations, principles, and so on of the present invention will be further explained with reference to the drawings and the detailed embodiments, and unless otherwise specified, the processes of epitaxy, coating, etching, and so on used in the embodiments of the present invention may be known to those skilled in the art.
Example 1
Referring to fig. 2, a wavelength conversion matrix includes wavelength conversion layers 41, 42, 43 and a passivation layer 60 disposed on a surface of a driving panel 10, wherein the surface of the driving panel 10 has self-luminous pixel points 20, the wavelength conversion layers 41, 42, 43 and the passivation layer 60 are disposed on the surface of the driving panel 10, the wavelength conversion layers 41, 42, 43 correspond to the self-luminous pixel points 20, and the wavelength conversion layers 41, 42, 43 cover a part or all of the self-luminous pixel points 20; the passivation layer 60 is disposed between the wavelength conversion layers 41, 42, 43, wherein the wavelength conversion layers 41, 42, 43 may overlap the self-luminous pixel dots 20 of the display to emit light having a specific wavelength.
In this embodiment, the driving panel 10 may be a thin film transistor, such as a silicon-based CMOS.
In this embodiment, the self-luminous pixel 20 may be a micro light emitting diode formed based on an inorganic semiconductor material, such as gallium nitride, aluminum gallium nitride, gallium arsenide, aluminum gallium indium phosphide, or a micro organic light emitting diode formed based on an organic material, such as a small molecule, a polymer, or a phosphorescent material.
In the present embodiment, the self-luminous pixel 20 provides an initial light with a first wavelength, which may be monochromatic light, such as uv, blue, green, etc.; of course, the light can also be bicolor light, such as ultraviolet plus blue, blue plus green, and the like; but may of course also be white light, such as red, green, blue, yellow, etc. If the primary emission contains light of a certain wavelength required for the microdisplay to be achieved, the wavelength converting layer (material) corresponding to that wavelength can be omitted, e.g. if the primary emission of the display panel is blue, the corresponding blue wavelength converting material is not needed anymore.
In this embodiment, a plurality of the self-luminous pixel points 20 may be disposed, the plurality of the self-luminous pixel points 20 are distributed in a first area on the surface of the driving panel 10, and the plurality of the self-luminous pixel points 20 may be distributed in a patterned array, wherein the first area may be considered as a light emitting area.
In the present embodiment, the pixel pitch size of the self-luminous pixel 20 is 1-100 μm, and the resolution of the pixel of the self-luminous pixel 20 can be flexibly set, such as VGA (640 × 480), XGA (1024 × 768), FHD (1920 × 1080), and the like.
In the present embodiment, the wavelength conversion layers 41, 42, 43 are disposed on the surface of the driving panel 10 and at least completely cover the plurality of self-luminous pixel points 20, and it can be understood that the wavelength conversion layers 41, 42, 43 completely overlap with the orthographic projections of the plurality of self-luminous pixel points 20, or the self-luminous pixel points 20 are located in the orthographic projections of the wavelength conversion layers 41, 42, 43.
In this embodiment, a plurality of wavelength conversion layers 41, 42, and 43 may be provided, the wavelength conversion layers 41, 42, and 43 may be distributed in a patterned array, and the distribution pattern of the wavelength conversion layers 41, 42, and 43 is the same as or similar to the distribution pattern of the self-luminous pixel points 20.
In the present embodiment, the wavelength conversion layers 41, 42, 43 may be at least one of a red wavelength conversion layer, a green wavelength conversion layer, a blue wavelength conversion layer, and a yellow wavelength conversion layer, for example, the wavelength conversion layer 41 is a red wavelength conversion layer, the wavelength conversion layer 42 is a green wavelength conversion layer, and the wavelength conversion layer 43 is a blue wavelength conversion layer.
It should be noted that the second wavelength of the light converted by the wavelength conversion layers 41, 42, and 43 is generally longer than the first wavelength of the original light, and the light with the second wavelength formed after the conversion may be monochromatic light (e.g., blue, green, yellow, red light, etc.) or polychromatic light (e.g., blue-green, blue-red, red-green, blue-green-red, etc.). For example, if the initial emission of the display panel is blue, it can be converted to a monochromatic green display using only a green wavelength converting material, although any other color combination is possible as long as the corresponding color converting material is selected.
In the present embodiment, the passivation layer 60 is disposed on the second region of the surface of the driving panel 10, that is, it can be understood that the passivation layer 60 is disposed in the gap between the wavelength conversion layers 41, 42, 43, and the thickness of the passivation layer 60 can be consistent with the thickness of the wavelength conversion layers 41, 42, 43; the passivation layer may be made of a photoresist, for example, an organic black matrix photoresist, a color filter photoresist, or the like, and the specific material may be polyimide, or the like.
In this embodiment, the wavelength conversion layers 41, 42, 43 are further provided with corresponding filter layers 51, 52, 53, and the filter layers 51, 52, 53 allow light with the second wavelength formed by conversion of the wavelength conversion layers 41, 42, 43 to pass through, but prevent light with the first wavelength from passing through.
In this embodiment, the filter layers 51, 52 and 53 may be at least one of a red filter layer, a green filter layer, a blue filter layer and a yellow filter layer, for example, the filter layer 51 may be a red filter layer, the filter layer 52 may be a green filter layer, and the filter layer 53 may be a blue filter layer.
In this embodiment, the filter layers 51, 52, 53 may be organic color filter photoresists or inorganic distributed dragging reflectors (e.g., multilayer silicon dioxide/titanium dioxide deposited by e-beam evaporation or chemical vapor deposition, etc.) or the like.
It should be noted that, if the wavelength conversion layer can absorb most of the initial light emission, the corresponding filter layer may not be provided.
Referring to fig. 3a to 3k, a method for fabricating a wavelength conversion matrix for a micro display device includes the following steps:
1) providing a second substrate 30, and coating a plurality of filter layers 51/52/53 on a second surface of the second substrate 30, thereby forming a device structure as shown in fig. 3 a;
the second substrate 30 is a transparent substrate, for example, the second substrate 30 may be a sapphire substrate, a glass substrate (ordinary glass or quartz glass), or the like; the plurality of filter layers 51/52/53 may be formed by directly manufacturing in a selective area manufacturing manner, or may be formed by first coating a filter material on the second surface of the second substrate and then etching the filter material in a dry etching manner; wherein the filter layer 51 may be a red filter layer, the filter layer 52 may be a green filter layer, the filter layer 53 may be a blue filter layer, and the plurality of filter layers 51/52/53 may be distributed in an array form;
2) coating a wavelength conversion material on the second surface of the second substrate 30 and the surface of the filter layer 51/52/53, forming a wavelength conversion layer after curing, covering a mask on the surface of the wavelength conversion layer, and removing the rest of the wavelength conversion layer which is not protected by the mask by adopting a dry etching method, thereby forming a wavelength conversion matrix comprising a plurality of wavelength conversion layers 41/42/43;
the wavelength conversion matrix comprises a plurality of wavelength conversion layers distributed at intervals, the plurality of wavelength conversion layers respectively correspond to a plurality of filter layers, the corresponding relation can be one-to-one or one-to-many, it is required to be noted that wavelength conversion materials contained in the plurality of wavelength conversion layers can be the same or different, and filter materials contained in the plurality of filter layers can be the same or different;
the step 2) may specifically include the following steps:
2.1) as shown in FIG. 3b, coating a red wavelength conversion material (also called as a red wavelength conversion material) on the second surface of the second substrate 30 and the surfaces of the red filter layer 51, the green filter layer 52 and the blue filter layer 53, and curing to form the red (red) wavelength conversion layer 41, or, in order to precisely control the subsequent etching process and precision, as the case may be, providing an etching barrier layer or mask on the second surface of the second substrate 30 and the surfaces of the green filter layer 52 and the blue filter layer 53, then forming the red wavelength conversion layer 41 on the etching barrier layer or mask and the surface of the red filter layer 51, and after the etching of the red wavelength conversion layer 41 is completed, removing the etching barrier layer or mask on the green filter layer 52 and the blue filter layer 53 to fabricate the green wavelength conversion layer 42 and the blue wavelength conversion layer 43, subsequent green wavelength-converting layers 42 may refer to this process;
2.2) as shown in fig. 3c, a first mask 71 is disposed on the red wavelength conversion layer 41, the first mask 71 covers a first region of the red wavelength conversion layer 41, the first region corresponds to the red filter layer 51, and the correspondence means that the shape, area and distribution pattern of the first mask 71 are the same as those of the red filter layer 51, and the following is the same;
2.3) as shown in fig. 3d, removing the red wavelength conversion layer 41 not covered by the first mask 71 by dry etching, and correspondingly disposing the remaining red wavelength conversion layer 41 on the red filter layer 51;
2.4) as shown in fig. 3e, coating a green (green) wavelength conversion material on the second surface of the second substrate 30, the green filter layer 52, the blue filter layer 53 and the surface of the first mask 71, curing to form the green (green) wavelength conversion layer 42, and disposing a second mask 72 on the green wavelength conversion layer 42, wherein the second mask 72 covers a second area of the green wavelength conversion layer 42, the second area corresponds to the green filter layer 52, and the forward projection area of the second mask 72 and the first mask 71 does not have an overlapping area;
2.5) as shown in fig. 3f, removing the green wavelength conversion layer 42 not covered by the second mask 72 by dry etching, and disposing the remaining green wavelength conversion layer 42 on the green filter layer 52;
2.6) as shown in fig. 3g, a blue (blue) wavelength conversion material is coated on the second surface of the second substrate 30, the blue filter layer 53, the first mask 71 and the second mask 72, and the blue (blue) wavelength conversion layer 43 is formed after curing; a third mask 73 is disposed on the blue wavelength conversion layer 43, the third mask 73 covers a third region of the blue wavelength conversion layer 43, the third region corresponds to the blue filter layer 53, there is no overlapping region between the third mask 73 and the orthographic projection regions of the first mask 71 and the second mask 72, the blue wavelength conversion layer 43 not covered by the third mask 73 is removed by dry etching, and the remaining blue wavelength conversion layer 43 is disposed on the blue filter layer 53;
wherein, the red, green or blue wavelength conversion material comprises a photoluminescent material, a polymer film material and a solvent;
the photoluminescence material comprises fluorescent powder or quantum dots, and the fluorescent powder can be yttrium aluminum garnet, cerium fluorescent powder, (oxy) nitride fluorescent powder, silicate fluorescent powder and Mn4+Activated fluoride phosphor, etc., which may be group II-VI compound quantum dots (e.g., cadmium sulfide, cadmium selenide, cadmium telluride, zinc oxide, zinc selenide, zinc telluride, etc.), group III-V compound quantum dots (e.g., gallium arsenide, gallium phosphide, gallium antimonide, mercury sulfide, mercury selenide, mercury antimonide, indium arsenide, indium phosphide, indium antimonide, aluminum arsenide, aluminum phosphide, aluminum antimonide, etc.), perovskite quantum dots, of course, the photoluminescent material may also be an organic dye, etc.; the polymer film material includes, but is not limited to, acrylic, polyethylene or resin, the solvent at least serves to assist in solvating the photoluminescent material into the polymer film material, the solvent propylene glycol methyl ether acetate, toluene or alcohol, but is not limited thereto;
in this embodiment, the first, second, and third masks may be dielectric material masks, photoresist masks, or metal masks, the dielectric material masks may be silicon dioxide, silicon nitride, or aluminum oxide, the metal masks may be multiple metal layers stacked together, and the metal layers may be cadmium, aluminum, nickel, gold, titanium, or platinum; the dry etching comprises physical etching, chemical etching or a combination of the physical etching and the chemical etching; the physical etching includes ion beam etching, the etching gas adopted by the ion beam etching includes inert gas, the chemical etching includes plasma etching, the etching gas adopted by the plasma etching includes sulfur hexafluoride and/or carbon tetrafluoride, the physical chemical etching includes reactive ion etching, the etching gas adopted by the reactive ion etching includes any one of chlorine, boron trichloride, sulfur hexafluoride, carbon tetrafluoride and inert gas, but is not limited thereto;
3) as shown in fig. 3h, a passivation layer 60 is formed on the second surface of the second substrate 30, and the surface of the passivation layer 60 is flush with the surfaces of the red wavelength conversion layer 41, the green wavelength conversion layer 42, and the blue wavelength conversion layer 43, wherein the passivation layer 60 is disposed in the gap between the red wavelength conversion layer 41, the green wavelength conversion layer 42, and the blue wavelength conversion layer 43, it should be noted that the first mask 71, the second mask 72, and the third mask 73 may be removed, and then the passivation layer 60 is manufactured, but the passivation layer may be manufactured first, and then the first mask 71, the second mask 72, and the third mask 73 may be removed;
4) as shown in fig. 3i, a first substrate (also referred to as a driving panel) 10 is provided, the first substrate 10 having a first surface, and a plurality of self-luminous pixel points 20 distributed on the first surface, the self-luminous pixel points 20 being capable of providing light with a first wavelength; the plurality of self-luminous pixel points 20 may be distributed in a graphical array, and the self-luminous pixel points 20 may be full-color pixel points, for example, the distribution graph of the plurality of self-luminous pixel points 20 may be as shown in fig. 4, the arrangement of red, green and blue pixel points in the full-color pixel points may be as shown in fig. 5a, 5b and 5c, 21 in the figure is a red pixel point, 22 is a green pixel point, and 23 is a blue pixel point, and the arrangement mode of the pixel points may be flexibly adjusted without special limitation;
5) referring to fig. 3j, the wavelength conversion matrix and the passivation layer 60 on the second surface of the second substrate 30 are combined with the first surface of the first substrate 10, and the wavelength conversion matrix covers a part or all of the self-luminous pixels 20, for example, the red wavelength conversion layer 41 covers the red pixels 21, the green wavelength conversion layer 42 covers the green pixels 22, and the blue wavelength conversion layer 43 covers the blue pixels 23.
6) As shown in fig. 3k, the second substrate 30 is removed to expose the wavelength conversion array and the passivation layer 60, thereby forming the micro display device.
The manufacturing method for the wavelength conversion matrix of the micro display device provided by the embodiment of the invention has the advantages that the process flow is simple, the operation is easy, the controllability is better, the patterning of the wavelength conversion layer is realized by a dry etching method in the manufacturing method provided by the invention, the resolution and the conversion efficiency of the finally formed wavelength conversion layer are higher, and the micro display with high resolution and high pixel density of the micro display device is favorably realized.
The graph of the wavelength conversion layer of the manufacturing method for the wavelength conversion matrix of the micro display device is obtained through dry etching, and the etching mask is defined through another photoetching step and a metallization step by using high-resolution photoresist, so that the resolution of the obtained wavelength conversion matrix is higher; in addition, the photoluminescent material in the method for manufacturing the wavelength conversion matrix of the micro-display device provided by the embodiment of the invention can be dispersed in the polymer film material at a relatively high concentration, and on the basis, the relatively thick photoluminescent material film can be realized by adjusting the process parameters of photoetching and dry etching, so that high conversion efficiency is obtained.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (20)
1. A method of fabricating a wavelength conversion matrix, comprising:
providing a substrate, and covering a wavelength conversion layer on the surface of the substrate;
covering a mask on the surface of the wavelength conversion layer;
and removing the rest part of the wavelength conversion layer which is not protected by the mask by adopting a dry etching mode, thereby forming a wavelength conversion matrix.
2. The method of manufacturing according to claim 1, wherein: the mask is a hard mask, and the hard mask is any one or the combination of more than two of a dielectric material mask, a photoresist mask and a metal mask; the dry etching method comprises physical etching, chemical etching or physical chemical etching.
3. The method of manufacturing according to claim 1, further comprising:
and covering a passivation layer on the surface of the substrate, filling the passivation layer in the gap of the wavelength conversion matrix, and enabling the surface of the passivation layer to be flush with or lower than the surface of the wavelength conversion layer.
4. The manufacturing method according to claim 1, characterized by specifically comprising:
covering a first wavelength conversion layer on the surface of the substrate;
arranging a first mask in a preset area on the surface of the first wavelength conversion layer;
removing the rest part of the first wavelength conversion layer which is not protected by the first mask by adopting a dry etching mode, thereby forming the wavelength conversion matrix; the first wavelength conversion layer can superpose a first self-luminous pixel point of the display to emit first light wavelength light.
5. The method of manufacturing according to claim 4, further comprising:
before the first wavelength conversion layer is covered, a first filter layer is arranged on the surface of the substrate;
the first wavelength conversion layer is at least covered with the first filter layer, and the first mask corresponds to the first filter layer;
wherein the first optical filter layer is capable of passing the first optical wavelength light.
6. The method of manufacturing according to claim 4, further comprising:
after removing the rest part of the first wavelength conversion layer which is not protected by the first mask by adopting a dry etching mode, covering a second wavelength conversion layer on the surface of the substrate;
arranging a second mask in a second area on the surface of the second wavelength conversion layer;
removing the rest part of the second wavelength conversion layer which is not protected by the second mask by adopting a dry etching mode, thereby forming the wavelength conversion matrix; the second wavelength conversion layer can superpose a second self-luminous pixel point of the display to emit second light wavelength.
7. The method of manufacturing according to claim 6, wherein: the first self-luminous pixel point and the second self-luminous pixel point emit light with the same or different wavelengths, photoluminescent materials contained in the first wavelength conversion layer and the second wavelength conversion layer are the same or different, and the first light wavelength light is different from the second light wavelength light.
8. The method of manufacturing according to claim 6, further comprising: before the first wavelength conversion layer is covered, a first filter layer and a second filter layer are arranged on the surface of the substrate;
the first wavelength conversion layer is at least covered with the first filter layer, and the first mask corresponds to the first filter layer;
the second wavelength conversion layer is at least covered with the second filter layer, and the second mask corresponds to the second filter layer;
wherein the first optical filter layer is capable of passing the first optical wavelength light; the second optical filter layer is capable of passing the second optical wavelength light.
9. The method of manufacturing according to claim 6, further comprising:
after removing the rest part of the second wavelength conversion layer which is not protected by the second mask by adopting a dry etching mode, covering a third wavelength conversion layer on the surface of the substrate;
arranging a third mask in a third area on the surface of the third wavelength conversion layer;
and removing the rest part of the third wavelength conversion layer which is not protected by the third mask by adopting a dry etching mode so as to form the wavelength conversion matrix, wherein the third wavelength conversion layer can superpose a third self-luminous pixel point of the display to emit third light wavelength.
10. The method of manufacturing according to claim 9, wherein: the first self-luminous pixel point, the second self-luminous pixel point and the third self-luminous pixel point emit the same or different light wavelengths, photoluminescent materials contained in the first wavelength conversion layer, the second wavelength conversion layer and the third wavelength conversion layer are the same or different, and the first light wavelength light, the second light wavelength light and the third light wavelength light are different.
11. The method of manufacturing according to claim 10, further comprising: before the first wavelength conversion layer is covered, a first filter layer, a second filter layer and a third filter layer are arranged on the surface of the substrate;
the first wavelength conversion layer is at least covered with the first filter layer, and the first mask corresponds to the first filter layer;
the second wavelength conversion layer is at least covered with the second filter layer, and the second mask corresponds to the second filter layer;
the third wavelength conversion layer is at least covered with the third filter layer, and the third mask corresponds to the third filter layer;
wherein the first optical filter layer is capable of passing the first optical wavelength light; the second filter layer is capable of passing the second optical wavelength light, and the third filter layer is capable of passing the third optical wavelength light.
12. The method of manufacturing according to claim 1, further comprising: removing the mask after forming the wavelength conversion matrix.
13. A wavelength conversion matrix, comprising: the wavelength conversion layer comprises a mask area and a non-mask area, the non-mask area is a hollow area, and the wavelength conversion layer can superpose self-luminous pixel points of the display to emit specific light wavelength light.
14. The wavelength conversion matrix of claim 13, wherein: the wavelength conversion matrix includes a first wavelength conversion layer that can superimpose first self-emissive pixels of a display to emit first light-wavelength light.
15. The wavelength conversion matrix of claim 13, wherein: the first wavelength conversion layer is further provided with a first filter layer, and the first filter layer can enable the first optical wavelength light to pass through.
16. The wavelength conversion matrix of claim 13, wherein: the wavelength conversion matrix further comprises a second wavelength conversion layer, the first wavelength conversion layer can overlap first self-luminous pixels of the display to emit first light wavelength, and the second wavelength conversion layer can overlap second self-luminous pixels of the display to emit second light wavelength;
the first self-luminous pixel point and the second self-luminous pixel point emit light with the same or different wavelengths, photoluminescent materials contained in the first wavelength conversion layer and the second wavelength conversion layer are the same or different, and the first light wavelength light and the second light wavelength light are different.
17. The wavelength conversion matrix of claim 16, wherein: the first wavelength conversion layer and the second wavelength conversion layer are respectively and correspondingly provided with a first filter layer and a second filter layer, the first filter layer can enable the first optical wavelength light to pass through, and the second filter layer can enable the second optical wavelength light to pass through.
18. The wavelength conversion matrix of claim 16, wherein: the wavelength conversion matrix further comprises a third wavelength conversion layer, and the third wavelength conversion layer can superpose third self-luminous pixel points of the display to emit third light wavelength;
the first self-luminous pixel point, the second self-luminous pixel point and the third self-luminous pixel point emit the same or different light wavelengths, photoluminescent materials contained in the first wavelength conversion layer, the second wavelength conversion layer and the third wavelength conversion layer are the same or different, and the first light wavelength light, the second light wavelength light and the third light wavelength light are different.
19. The wavelength conversion matrix of claim 18, wherein: the first wavelength conversion layer, the second wavelength conversion layer and the third wavelength conversion layer are respectively and correspondingly provided with a first filter layer, a second filter layer and a third filter layer, the first filter layer can enable the first optical wavelength light to pass through, the second filter layer can enable the second optical wavelength light to pass through, and the third filter layer can enable the third optical wavelength light to pass through.
20. The wavelength conversion matrix of claim 13, wherein: and a passivation layer is further arranged in the non-mask region, and the surface of the passivation layer is flush with the surface of the wavelength conversion layer or lower than the surface of the wavelength conversion layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111285591.8A CN113990998A (en) | 2021-11-01 | 2021-11-01 | Wavelength conversion matrix and manufacturing method thereof |
| PCT/CN2022/126437 WO2023071911A1 (en) | 2021-11-01 | 2022-10-20 | Wavelength conversion matrix and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111285591.8A CN113990998A (en) | 2021-11-01 | 2021-11-01 | Wavelength conversion matrix and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113990998A true CN113990998A (en) | 2022-01-28 |
Family
ID=79745570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111285591.8A Pending CN113990998A (en) | 2021-11-01 | 2021-11-01 | Wavelength conversion matrix and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113990998A (en) |
| WO (1) | WO2023071911A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114759130A (en) * | 2022-06-15 | 2022-07-15 | 镭昱光电科技(苏州)有限公司 | Micro-LED display chip and preparation method thereof |
| CN115483327A (en) * | 2022-11-09 | 2022-12-16 | 镭昱光电科技(苏州)有限公司 | Micro LED Micro display chip and manufacturing method thereof |
| WO2023071911A1 (en) * | 2021-11-01 | 2023-05-04 | 镭昱光电科技(苏州)有限公司 | Wavelength conversion matrix and manufacturing method therefor |
| CN116344686A (en) * | 2023-05-31 | 2023-06-27 | 季华实验室 | Method for manufacturing full-color display panel, display panel and display device |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369097A (en) * | 2007-08-15 | 2009-02-18 | 联华电子股份有限公司 | Production method of colorful color filter |
| CN106876406A (en) * | 2016-12-30 | 2017-06-20 | 张希娟 | LED full-color display part structures and preparation method based on III V group-III nitride semiconductors |
| US20190148458A1 (en) * | 2017-11-15 | 2019-05-16 | Samsung Display Co. Ltd. | Display device |
| CN111883633A (en) * | 2020-07-03 | 2020-11-03 | 深圳市思坦科技有限公司 | Manufacturing method of display module and display screen |
| CN111933634A (en) * | 2020-09-17 | 2020-11-13 | 山东元旭光电股份有限公司 | Preparation method of Micro-LED chip |
| CN112750862A (en) * | 2019-10-31 | 2021-05-04 | 成都辰显光电有限公司 | Color conversion structure, display device and preparation method of color conversion structure |
| CN112750886A (en) * | 2020-12-31 | 2021-05-04 | 安徽熙泰智能科技有限公司 | Micro-display structure for improving crosstalk based on BM (broadcast multicast service) technology and preparation method thereof |
| CN113097242A (en) * | 2021-03-25 | 2021-07-09 | 安徽熙泰智能科技有限公司 | High-resolution micro-display structure and preparation method thereof |
| CN113140690A (en) * | 2021-04-28 | 2021-07-20 | 安徽熙泰智能科技有限公司 | Method for manufacturing submicron-level color filter layer of silicon-based OLED device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161513B (en) * | 2015-08-03 | 2017-03-08 | 京东方科技集团股份有限公司 | OLED display and its manufacture method, color membrane substrates and its manufacture method |
| CN105974653B (en) * | 2016-07-21 | 2019-05-07 | 京东方科技集团股份有限公司 | Color membrane substrates and its manufacturing method, mask plate and its manufacturing method, display device |
| CN107065289B (en) * | 2017-05-26 | 2020-06-09 | 海信视像科技股份有限公司 | Quantum dot color filter, preparation method, liquid crystal panel and liquid crystal display device |
| KR102544328B1 (en) * | 2017-12-22 | 2023-06-19 | 삼성디스플레이 주식회사 | Display device and manufacturing method thereof |
| US11251341B2 (en) * | 2018-10-12 | 2022-02-15 | Boe Technology Group Co., Ltd. | Micro light emitting diode display panel, micro light emitting diode display apparatus, and method of fabricating micro light emitting diode display panel |
| CN111244127B (en) * | 2020-03-20 | 2023-03-28 | 京东方科技集团股份有限公司 | Manufacturing method of display panel, display panel and display device |
| CN113990998A (en) * | 2021-11-01 | 2022-01-28 | 镭昱光电科技(苏州)有限公司 | Wavelength conversion matrix and manufacturing method thereof |
-
2021
- 2021-11-01 CN CN202111285591.8A patent/CN113990998A/en active Pending
-
2022
- 2022-10-20 WO PCT/CN2022/126437 patent/WO2023071911A1/en unknown
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369097A (en) * | 2007-08-15 | 2009-02-18 | 联华电子股份有限公司 | Production method of colorful color filter |
| CN106876406A (en) * | 2016-12-30 | 2017-06-20 | 张希娟 | LED full-color display part structures and preparation method based on III V group-III nitride semiconductors |
| US20190148458A1 (en) * | 2017-11-15 | 2019-05-16 | Samsung Display Co. Ltd. | Display device |
| CN112750862A (en) * | 2019-10-31 | 2021-05-04 | 成都辰显光电有限公司 | Color conversion structure, display device and preparation method of color conversion structure |
| CN111883633A (en) * | 2020-07-03 | 2020-11-03 | 深圳市思坦科技有限公司 | Manufacturing method of display module and display screen |
| CN111933634A (en) * | 2020-09-17 | 2020-11-13 | 山东元旭光电股份有限公司 | Preparation method of Micro-LED chip |
| CN112750886A (en) * | 2020-12-31 | 2021-05-04 | 安徽熙泰智能科技有限公司 | Micro-display structure for improving crosstalk based on BM (broadcast multicast service) technology and preparation method thereof |
| CN113097242A (en) * | 2021-03-25 | 2021-07-09 | 安徽熙泰智能科技有限公司 | High-resolution micro-display structure and preparation method thereof |
| CN113140690A (en) * | 2021-04-28 | 2021-07-20 | 安徽熙泰智能科技有限公司 | Method for manufacturing submicron-level color filter layer of silicon-based OLED device |
Non-Patent Citations (1)
| Title |
|---|
| 塞洛普•卡尔帕基安等: "《制造工程与技术——机加工》", 31 October 2019, 机械工业出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023071911A1 (en) * | 2021-11-01 | 2023-05-04 | 镭昱光电科技(苏州)有限公司 | Wavelength conversion matrix and manufacturing method therefor |
| CN114759130A (en) * | 2022-06-15 | 2022-07-15 | 镭昱光电科技(苏州)有限公司 | Micro-LED display chip and preparation method thereof |
| CN115483327A (en) * | 2022-11-09 | 2022-12-16 | 镭昱光电科技(苏州)有限公司 | Micro LED Micro display chip and manufacturing method thereof |
| CN116344686A (en) * | 2023-05-31 | 2023-06-27 | 季华实验室 | Method for manufacturing full-color display panel, display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023071911A1 (en) | 2023-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113990998A (en) | Wavelength conversion matrix and manufacturing method thereof | |
| WO2023071914A1 (en) | Microdisplay device and manufacturing method therefor | |
| KR102093628B1 (en) | Organic electro luminescent device and method of fabricating the same | |
| US9823510B2 (en) | Quantum dot color film substrate, manufacturing method thereof and LCD apparatus | |
| CN110620127B (en) | Display device and manufacturing method of monochromatic micro light-emitting diode | |
| US11362148B2 (en) | Quantum dot display panel and manufacturing method thereof | |
| US9897912B2 (en) | Color filter film manufacturing method and color filter film | |
| Bae et al. | Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit | |
| US20210336096A1 (en) | Display panel and manufacturing method thereof | |
| WO2016045271A1 (en) | Display substrate and preparation method therefor, and display device | |
| US11839093B2 (en) | Image rendering in organic light emitting diode (OLED) displays, apparatuses, systems, and methods | |
| US11296257B2 (en) | Light-emitting diode chip and preparation method therefor | |
| CN113725249B (en) | Chip structure, manufacturing method and display device | |
| Ma et al. | Progress in Color Conversion Technology for Micro‐LED | |
| KR20210157488A (en) | Color Conversion Layers for Light Emitting Devices | |
| US20220158109A1 (en) | Flexible display panel, flexible display device and method of forming flexible display panel | |
| KR20180014334A (en) | Organic light emitting display device and manufacturing method for the device | |
| CN113097242A (en) | High-resolution micro-display structure and preparation method thereof | |
| US10503064B2 (en) | Method for manufacturing color filter substrate | |
| US20230155075A1 (en) | Light emitting devices including a quantum dot color conversion material and method of making thereof | |
| US20210005670A1 (en) | Display device and manufacturing method thereof | |
| CN113224109A (en) | Display device | |
| US20240136485A1 (en) | U-display structure with qd color conversion and methods of manufacture | |
| US20240088116A1 (en) | Micro-led displays to reduce subpixel crosstalk | |
| US20230068483A1 (en) | Micro led display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |