CN112750886A - Micro-display structure for improving crosstalk based on BM (broadcast multicast service) technology and preparation method thereof - Google Patents
Micro-display structure for improving crosstalk based on BM (broadcast multicast service) technology and preparation method thereof Download PDFInfo
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- CN112750886A CN112750886A CN202011634131.7A CN202011634131A CN112750886A CN 112750886 A CN112750886 A CN 112750886A CN 202011634131 A CN202011634131 A CN 202011634131A CN 112750886 A CN112750886 A CN 112750886A
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 7
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- 238000000034 method Methods 0.000 claims description 22
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 8
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention discloses a micro-display structure for improving crosstalk based on BM technology and a preparation method thereof, wherein the micro-display structure comprises: the micro-display light-emitting device comprises a micro-display light-emitting body and a transparent intermediate layer, wherein the transparent intermediate layer is arranged on the upper surface of a packaging layer in the micro-display light-emitting body, and a filter layer is arranged on the upper surface of the transparent intermediate layer; a plurality of BM grooves are arranged on the transparent middle layer, each BM groove is in one-to-one correspondence with a plurality of holes on the anode layer in the micro-display luminous body, and the inner wall of each BM groove is coated with a BM layer. The micro-display structure overcomes the problem that the optical crosstalk and the electrical crosstalk between pixels are more serious along with the reduction of the pixel size of the micro-display in the prior art.
Description
Technical Field
The invention relates to the technical field of microdisplays, in particular to a microdisplay structure for improving crosstalk based on a BM (broadcast multicast service) technology and a preparation method thereof.
Background
In a microdisplay, as the size of pixels is reduced, optical crosstalk and electrical crosstalk between pixels become more serious; optical crosstalk refers to light reflected by a metal anode and crosstalking to adjacent pixels, causing the pixels in adjacent dark states to emit light, or causing the edges of the pixels to be brighter due to the fact that the overlapping light intensity of the edges of the pixels is stronger. Electrical cross-talk means that lateral diffusion of current causes light to be emitted at the anode gap and in severe cases even adjacent pixels, both of which cause a lower color gamut.
Therefore, it is an urgent need to solve the problem of the present invention to provide a microdisplay structure based on BM technology for improving crosstalk and its manufacturing method, which can effectively improve optical crosstalk and electrical crosstalk during the using process.
Disclosure of Invention
In view of the above technical problems, an object of the present invention is to overcome the problem that the optical crosstalk and the electrical crosstalk between pixels become more and more serious as the pixel size of the microdisplay in the prior art is reduced, so as to provide a crosstalk-improved microdisplay structure based on BM technology and a method for manufacturing the same, wherein the crosstalk-improved microdisplay structure can effectively improve the optical crosstalk and the electrical crosstalk in the using process.
In order to achieve the above object, the present invention provides a crosstalk-improved microdisplay structure based on BM technology, the microdisplay structure comprising: the micro-display light-emitting device comprises a micro-display light-emitting body and a transparent intermediate layer, wherein the transparent intermediate layer is arranged on the upper surface of a packaging layer in the micro-display light-emitting body, and a filter layer is arranged on the upper surface of the transparent intermediate layer; wherein the content of the first and second substances,
a plurality of BM grooves are arranged on the transparent middle layer, each BM groove is in one-to-one correspondence with a plurality of holes on the anode layer in the micro-display luminous body, and the inner wall of each BM groove is coated with black photoresist.
Preferably, the material of the transparent intermediate layer is any one of silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide and indium zinc oxide.
Preferably, the micro display light emitting body includes: the driving circuit board, the anode layer, the light emitting layer, the cathode layer and the packaging layer are arranged from bottom to top in sequence; the anode layer is provided with a plurality of cavities matched with the filter layer at intervals, and each cavity is provided with a pixel defining layer.
Preferably, the filter layer includes: a red filter, a green filter and a blue filter.
Preferably, a filter protection layer is further disposed above the filter layer.
The invention also provides a preparation method of the micro-display structure for improving crosstalk based on the BM technology, which comprises the following steps:
preparing a micro-display luminescent body;
depositing a transparent intermediate layer on the encapsulation layer of the microdisplay light-emitting body;
etching a plurality of BM grooves corresponding to the holes on the anode layer one by one on the transparent intermediate layer;
etching and stripping the BM groove;
coating black photoresist in the BM groove;
and etching back the black photoresist to retain the black photoresist in the BM groove.
Preferably, the method of preparing a micro display light emitting body includes:
preparing an anode layer on the driving circuit board, wherein a plurality of holes matched with the filter layer are arranged on the anode layer at intervals;
preparing a pixel defining layer in the hole;
evaporating a light emitting layer and a cathode layer on the anode layer in sequence respectively;
an encapsulation layer is deposited on the cathode layer.
Preferably, after the black photoresist is etched back to leave the black photoresist in the BM trench, the method further comprises:
preparing a filter layer on the transparent intermediate layer;
and preparing a filter protection layer on the filter layer.
Preferably, the filter layer includes: a red filter, a green filter and a blue filter.
Preferably, the material of the transparent intermediate layer is any one of silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide and indium zinc oxide.
According to the technical scheme, the micro-display structure for improving crosstalk based on the BM technology and the preparation method thereof have the beneficial effects that: by using the transparent middle layer, the BM grooves are formed in the transparent middle layer and coated with black photoresist, the black photoresist in the BM grooves is reserved after the black photoresist is etched back, and finally, high-resolution black photoresist patterns are formed in the transparent middle layer, so that the purpose of shielding light to improve optical crosstalk and electrical crosstalk can be achieved, small line width requirements can be met, the high-resolution black photoresist patterns are used for high-resolution display, and the problem that the high-resolution requirements cannot be met due to low resolution of a common black photoresist patterning process is solved.
Additional features and advantages of the invention will be set forth in the detailed description which follows; and the parts not involved in the invention are the same as or can be realized by the prior art.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of a microdisplay structure with crosstalk improvement based on BM technology according to a preferred embodiment of the present invention;
FIG. 2 is a schematic view of the structure of an anode layer provided in a preferred embodiment of the present invention;
FIG. 3 is a schematic structural view of a transparent interlayer provided in a preferred embodiment of the present invention;
FIG. 4 is a schematic diagram of the structure of a filter layer provided in a preferred embodiment of the present invention;
FIG. 5 is a flow chart of a method of fabricating a crosstalk-improved microdisplay structure in accordance with BM technology in a preferred embodiment of the invention;
FIG. 6 is a flow chart of a method of making a microdisplay emitter provided in a preferred embodiment of the invention;
fig. 7 is a flow chart of a method for fabricating a crosstalk-improved microdisplay structure according to BM technology in a preferred embodiment of the present invention.
Description of the reference numerals
1 drive circuit board 2 anode layer
3 pixel definition layer 4 light emitting layer
5 cathode layer 6 encapsulation layer
9 Filter layer 91 Red Filter
92 green filter 93 blue filter
10-hole 12 filter protection layer
13BM groove
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
In the present invention, unless otherwise specified, the directional words "upper, lower, inner, outer" and the like included in the terms merely represent the orientation of the terms in a conventional use state or are colloquially understood by those skilled in the art, and should not be construed as limiting the terms.
As shown in fig. 1-4, the present invention provides a crosstalk-improved microdisplay structure based on BM technology, the microdisplay structure comprising: the micro-display light-emitting device comprises a micro-display light-emitting body and a transparent intermediate layer 8, wherein the transparent intermediate layer 8 is arranged on the upper surface of a packaging layer in the micro-display light-emitting body, and a filter layer 9 is arranged on the upper surface of the transparent intermediate layer 8; a plurality of BM black matrix grooves 13 are arranged on the transparent middle layer 8, each BM groove 13 is in one-to-one correspondence with a plurality of cavities 10 on the anode layer 2 in the micro-display light-emitting body, and the inner wall of each BM groove 13 is coated with a BM black matrix layer 7.
In the above scheme, bm (black matrix), i.e. the so-called black matrix, mainly functions to isolate RGB to prevent color mixing in appearance; the other function is for shading light, and the materials for manufacturing BM generally include Cr, CrOx, black resin, etc. It acts on the separated color layer to improve color contrast and avoid photocurrent generation. In the invention, after white light emitted by the micro-display luminous body is emitted from the transparent intermediate layer 8, the BM grooves 13 coated with the BM layer can shield the light in the area where the BM grooves are positioned, thereby realizing the purpose of improving optical crosstalk and electrical crosstalk, meeting the requirement of small line width, being used for high-resolution display and solving the problem that the common black photoresist patterning process cannot meet the requirement of high resolution due to low resolution.
It should be noted that, for the positions of the BM grooves 13, the anode layer mechanism and the filter layer 9 structure are matched, generally, a structure of a plurality of cavities 10 is provided on the anode layer, and the structure of each cavity is also matched with the structure of the filter layer 9, the filter layer 9 generally includes a red filter 91, a green filter 92 and a blue filter 93, and the joint between two adjacent filters is provided with a structure of the cavity 10 corresponding to the joint, the present invention is to provide the BM grooves 13 for the position structure of the cavity 10, so that each BM groove 13 is respectively corresponding to a plurality of cavities 10 one by one, where one-to-one correspondence can be understood as that one cavity 10 is provided at the bottom, and then the BM groove 13 corresponding to the cavity is provided right above the cavity, thereby implementing a one-to-one correspondence structure.
In a preferred embodiment of the present invention, the material of the transparent intermediate layer 8 is any one of silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide, and indium zinc oxide.
In the above scheme, the transparent intermediate layer 8 made of the above material can firstly realize the transparent effect, and secondly, the structure that the BM black matrix groove 13 and the BM black matrix layer 7 are conveniently manufactured on the transparent intermediate layer.
In a preferred embodiment of the present invention, the micro display light emitting body includes: the driving circuit board 1, the anode layer 2, the light emitting layer 4, the cathode layer 5 and the packaging layer 6 are arranged from bottom to top in sequence; a plurality of holes 10 matched with the filter layer 9 are arranged on the anode layer 2 at intervals, and a pixel defining layer 3 is arranged in each hole 10.
In the above-mentioned scheme, the micro-display light-emitting body composed of the structural functional layers such as the light-emitting layer 4 emits light, generally white light, and is filtered by the filter layer 9 to generate tricolor light.
In a preferred embodiment of the present invention, the filter layer 9 includes: a red filter 91, a green filter 92, and a blue filter 93.
In the above scheme, the light emitted by the micro-display light-emitting body is filtered by the three filters, the red filter 91 filters the red light, the green filter 92 filters the green light, and the blue filter 93 filters the blue light, so as to generate the three primary colors.
In a preferred embodiment of the present invention, a filter protection layer 12 is further disposed above the filter layer 9, and the filter protection layer 12 mainly protects the filter layer 9 to prolong the service life thereof.
According to the above content, the working principle of the microdisplay structure based on BM technology for improving crosstalk in use provided by the present invention is as follows: according to the invention, a transparent middle layer of silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide or indium zinc oxide and the like is used for forming a BM groove on the transparent middle layer, black photoresist is coated, the black photoresist is subjected to a back etching process, the black photoresist in the groove is reserved, and finally a high-resolution black photoresist pattern is formed on the transparent middle layer. The micro-display structure developed by the invention can realize the purpose of shielding light rays to improve optical crosstalk and electrical crosstalk, can meet the requirement of small line width, is used for high-resolution display, and solves the problem that the high-resolution requirement cannot be met due to the low resolution of the common black photoresist patterning process.
As shown in fig. 5 to 7, the present invention further provides a method for manufacturing a microdisplay structure with crosstalk improved based on BM technology, where the method includes:
preparing a micro-display luminescent body;
depositing a transparent intermediate layer 8 on the encapsulation layer 6 of the microdisplay light body;
etching a plurality of BM grooves 13 on the transparent intermediate layer 8, which correspond to the plurality of cavities 10 on the anode layer 2 one by one;
etching and stripping the BM groove 13;
coating black photoresist in the BM grooves 13;
and etching back the black photoresist, and keeping the black photoresist in the BM groove 13 to form the BM layer 7.
In a preferred embodiment of the present invention, the method of preparing a micro display light emitting body includes:
preparing an anode layer 2 on a driving circuit board 1, wherein a plurality of cavities 10 matched with the filter layer 9 are arranged on the anode layer 2 at intervals;
preparing a pixel defining layer 3 in the void 10;
a luminous layer 4 and a cathode layer 5 are respectively evaporated on the anode layer 2 in sequence;
an encapsulation layer 6 is deposited on the cathode layer 5.
In a preferred embodiment of the present invention, after the back etching the black photoresist to leave the black photoresist in the BM trench 13, the method further includes:
preparing a filter layer 9 on the transparent intermediate layer 8;
a filter protection layer 12 is prepared on the filter layer 9.
In a preferred embodiment of the present invention, the filter layer 9 includes: a red filter 91, a green filter 92, and a blue filter 93.
In a preferred embodiment of the present invention, the material of the transparent intermediate layer 8 is any one of silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide, and indium zinc oxide.
In the above scheme, the operating principle of the method for manufacturing a microdisplay structure with crosstalk improved based on BM technology is as follows: according to the invention, a transparent middle layer of silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide or indium zinc oxide and the like is used for forming a BM groove on the transparent middle layer, black photoresist is coated, the black photoresist is subjected to a back etching process, the black photoresist in the groove is reserved, and finally a high-resolution black photoresist pattern is formed on the transparent middle layer. The micro-display structure developed by the invention can realize the purpose of shielding light rays to improve optical crosstalk and electrical crosstalk, can meet the requirement of small line width, is used for high-resolution display, and solves the problem that the high-resolution requirement cannot be met due to the low resolution of the common black photoresist patterning process.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (10)
1. An improved crosstalk microdisplay structure based on BM technology, the microdisplay structure comprising: the micro-display light-emitting device comprises a micro-display light-emitting body and a transparent intermediate layer (8), wherein the transparent intermediate layer (8) is arranged on the upper surface of a packaging layer in the micro-display light-emitting body, and a filter layer (9) is arranged on the upper surface of the transparent intermediate layer (8); wherein the content of the first and second substances,
be provided with a plurality of BM (black matrix) slot (13) on transparent intermediate layer (8), every BM slot (13) respectively with a plurality of holes (10) on anode layer (2) in the little luminous body of showing one-to-one, and every BM slot (13) the interior wall of all scribbling BM (black matrix) layer (7).
2. The BM technology-based crosstalk-improved microdisplay structure of claim 1, in which the transparent intermediate layer (8) is made of any one of silicon oxide-silicon nitride, indium tin oxide, indium gallium zinc oxide and indium zinc oxide.
3. The BM-technology-based microdisplay structure with improved crosstalk according to claim 1, wherein the microdisplay light body comprises: the driving circuit board (1), the anode layer (2), the light-emitting layer (4), the cathode layer (5) and the packaging layer (6) are arranged from bottom to top in sequence; the anode layer (2) is provided with a plurality of cavities (10) matched with the filter layer (9) at intervals, and each cavity (10) is provided with a pixel defining layer (3).
4. A BM-technology-based microdisplay structure with improved crosstalk according to claim 3, wherein the filter layer (9) comprises: a red filter (91), a green filter (92), and a blue filter (93).
5. The BM technology based microdisplay structure for crosstalk improvement according to claim 4, in which a filter protection layer (12) is also provided above the filter layer (9).
6. A method of fabricating an improved crosstalk microdisplay structure according to any one of claims 1-5 based on BM technology, the method comprising:
preparing a micro-display luminescent body;
depositing a transparent intermediate layer (8) on the encapsulation layer (6) of the microdisplay light body;
etching a plurality of BM grooves (13) on the transparent intermediate layer (8) in one-to-one correspondence with the plurality of cavities (10) on the anode layer (2);
etching and stripping the BM groove (13);
coating black photoresist in the BM groove (13);
and etching back the black photoresist, and keeping the black photoresist in the BM groove (13) to form a BM layer (7).
7. The method for preparing a micro-display structure based on BM technology and used for improving crosstalk according to claim 6, wherein the method for preparing micro-display light-emitting body comprises:
preparing an anode layer (2) on a driving circuit board (1), wherein a plurality of cavities (10) matched with the optical filter layer (9) are arranged on the anode layer (2) at intervals;
-preparing a pixel defining layer (3) in said hole (10);
a luminous layer (4) and a cathode layer (5) are respectively evaporated on the anode layer (2) in sequence;
depositing an encapsulation layer (6) on the cathode layer (5).
8. A method of fabricating a crosstalk-improved micro-display structure according to claim 6, characterized in that after said lithographically back-etching the black to leave the black photoresist in the BM trench (13), the method further comprises:
preparing a filter layer (9) on the transparent intermediate layer (8);
and preparing a filter protection layer (12) on the filter layer (9).
9. A method of fabricating a crosstalk-improved micro-display structure according to claim 8, characterized in that the filter layer (9) comprises: a red filter (91), a green filter (92), and a blue filter (93).
10. The method for manufacturing a microdisplay structure according to claim 6, wherein the transparent intermediate layer (8) is made of any one of silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide and indium zinc oxide.
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| CN113990999A (en) * | 2021-11-01 | 2022-01-28 | 镭昱光电科技(苏州)有限公司 | Micro display and manufacturing method thereof |
| CN113990998A (en) * | 2021-11-01 | 2022-01-28 | 镭昱光电科技(苏州)有限公司 | Wavelength conversion matrix and manufacturing method thereof |
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