CN113990999A - Micro display and manufacturing method thereof - Google Patents

Micro display and manufacturing method thereof Download PDF

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Publication number
CN113990999A
CN113990999A CN202111286417.5A CN202111286417A CN113990999A CN 113990999 A CN113990999 A CN 113990999A CN 202111286417 A CN202111286417 A CN 202111286417A CN 113990999 A CN113990999 A CN 113990999A
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China
Prior art keywords
wavelength conversion
conversion layer
self
light
wavelength
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仉旭
庄永漳
刘纪美
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Laiyu Optoelectronic Technology Suzhou Co ltd
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Laiyu Optoelectronic Technology Suzhou Co ltd
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Priority to CN202111286417.5A priority Critical patent/CN113990999A/en
Publication of CN113990999A publication Critical patent/CN113990999A/en
Priority to PCT/CN2022/126452 priority patent/WO2023071914A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Filters (AREA)

Abstract

The invention discloses a micro display and a manufacturing method thereof. The method for manufacturing the micro display comprises the following steps: providing a substrate, wherein the substrate is provided with a first surface, and a plurality of self-luminous pixel points are distributed on the first surface; covering a wavelength conversion layer on the first surface of the substrate; covering a mask on the surface of the wavelength conversion layer, wherein the mask is arranged corresponding to part or all of the self-luminous pixel points; and removing the rest part of the wavelength conversion layer which is not protected by the mask by adopting a dry etching mode, thereby forming a wavelength conversion matrix. The invention realizes the imaging of the wavelength conversion material by a dry etching method, thereby obtaining the micro display with high resolution and high pixel density.

Description

Micro display and manufacturing method thereof
Technical Field
The invention particularly relates to a micro display and a manufacturing method thereof, and belongs to the technical field of micro display.
Background
In the prior art, the manufacturing process of a monochromatic Micro-LED Micro-display device is researched a lot, and the manufacturing process is mature. The preparation of full-color Micro-LED displays mainly adopts three-primary-color LED chips for assembly at present, and the three-primary-color assembly faces huge difficulties in mass transfer.
The scheme of the fluorescent powder light conversion layer and the quantum dot color conversion layer is a more convenient and feasible method for realizing full-color display. The fluorescent powder has low efficiency, large half-peak width, poor color purity and poor display effect, and meanwhile, the fluorescent powder has large particles and is not suitable for micro-display with small pixel points; the quantum dot material has the advantages of concentrated light emission spectrum, high color purity, simple and easy adjustment of light emission color through the size, structure or components of the quantum dot material, and the like, and the color gamut and color reduction capability of the display device can be effectively improved by applying the quantum dot material to the display device by utilizing the advantages.
Prior art 1(US 9904097B 2, US8459855B2) discloses a method for manufacturing a wavelength conversion matrix, as shown in fig. 1a (in the figure, 11 is a driving back plate, 121 is a black partition wall, 131 is a transparent partition wall, 132/133 is a pad, and 141/142/143 is a red, green, and blue quantum dot film), which uses a transparent photoresist to build a partition wall structure, thereby helping to limit the distribution of the quantum dot film made by an air-jet method, specifically, a wavelength conversion material is directly coated on a display panel and patterned, wherein a photoluminescent material is dispersed in a solvent with low viscosity and then printed on the display panel by an air-jet method. However, the thickness of the material is difficult to accumulate due to the diffusion of the low-viscosity solvent, so that the photo-induced conversion is insufficient to affect the display quality, and further, the printing process requires high alignment accuracy and is time-consuming, so that the production efficiency of the printing process may be problematic as the resolution and pixel density of the micro-display screen are continuously increased.
As shown in fig. 1B, prior art 2(US9690135B2) discloses that a wavelength conversion material is coated on a transparent substrate and patterned, and then covered on a display panel by means of an inverted crystal package. The photoluminescence material is dispersed in the photoresist and patterned by a photoetching method, so that the production efficiency is greatly improved, and the light conversion efficiency is also improved due to the improvement of the material thickness. However, the resolution is limited due to the severe scattering phenomenon of the light conversion material, and in order to improve the resolution to obtain a pattern of 5um or less, the concentration of the photoluminescent material must be controlled to a low level, but the corresponding absorption and conversion characteristics are degraded, so that it is very challenging to balance the resolution and the conversion efficiency in this method.
Disclosure of Invention
The present invention is directed to a microdisplay and a method of fabricating the microdisplay to overcome the deficiencies of the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a method for manufacturing a micro display, which comprises the following steps:
providing a substrate, wherein the substrate is provided with a first surface, and a plurality of self-luminous pixel points are distributed on the first surface;
covering a wavelength conversion layer on the first surface of the substrate;
covering a mask on the surface of the wavelength conversion layer, wherein the mask is arranged corresponding to part or all of the self-luminous pixel points;
and removing the rest part of the wavelength conversion layer which is not protected by the mask by adopting a dry etching mode, thereby forming a wavelength conversion matrix.
An embodiment of the present invention further provides a microdisplay, which includes:
the display device comprises a substrate, a light source and a light emitting diode, wherein the substrate is provided with a first surface, and a plurality of self-luminous pixel points are distributed on the first surface;
a wavelength conversion matrix comprising at least one wavelength conversion layer disposed on the first surface of the substrate, the wavelength conversion layer comprising a mask protection region and a dry etching region, the mask protection region corresponding to a portion or all of the self-emissive pixel sites, the wavelength conversion layer overlying a portion or all of the self-emissive pixel sites.
Compared with the prior art, the invention has the advantages that:
1) the graph of the wavelength conversion layer of the manufacturing method of the wavelength conversion matrix is obtained by dry etching, and the etching mask is defined by using high-resolution photoresist through other photoetching steps and metallization steps, so that the resolution of the obtained wavelength conversion matrix is higher;
2) the photoluminescence material in the method for manufacturing the wavelength conversion matrix provided by the embodiment of the invention can be dispersed in the polymer film material at a relatively high concentration, and on the basis, the relatively thick photoluminescence material film can be realized by adjusting the technological parameters of photoetching and dry etching, so that high conversion efficiency is obtained.
Drawings
Fig. 1a and 1b are schematic structural diagrams illustrating a manufacturing principle of a wavelength conversion matrix in the prior art;
FIG. 2 is a schematic diagram of a microdisplay in accordance with an exemplary embodiment of the invention;
FIGS. 3 a-3 l are schematic diagrams of a flow chart for fabricating a microdisplay according to an exemplary embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a distribution pattern of self-luminous pixel points 20 provided in an exemplary embodiment of the present invention;
fig. 5a, 5b, and 5c are schematic diagrams of arrangement structures of red, green, and blue pixels in a full-color pixel.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
The embodiment of the invention provides a method for manufacturing a micro display, which comprises the following steps:
providing a substrate, wherein the substrate is provided with a first surface, and a plurality of self-luminous pixel points are distributed on the first surface;
covering a wavelength conversion layer on the first surface of the substrate;
covering a mask on the surface of the wavelength conversion layer, wherein the mask is arranged corresponding to part or all of the self-luminous pixel points;
and removing the rest part of the wavelength conversion layer which is not protected by the mask by adopting a dry etching mode, thereby forming a wavelength conversion matrix.
In a specific embodiment, the manufacturing method specifically includes: and coating a wavelength conversion material on the first surface of the substrate, and curing the wavelength conversion material by adopting an ultraviolet irradiation or thermal baking mode to form the wavelength conversion layer.
In a specific embodiment, the mask is a hard mask, and the hard mask is any one or a combination of two or more of a dielectric mask, a photoresist mask and a metal mask, but is not limited thereto.
In one embodiment, the material of the dielectric mask includes, but is not limited to, titanium dioxide, zirconium dioxide, silicon nitride, and aluminum oxide.
In one embodiment, the material of the metal mask includes any one or a combination of two or more of cadmium, aluminum, nickel, gold, copper, chromium, titanium, and platinum, but is not limited thereto.
In one embodiment, the material of the photoresist mask includes a positive photoresist or a negative photoresist.
In a specific embodiment, the dry etching manner includes physical etching, chemical etching, or physical chemical etching.
In one embodiment, the physical etching comprises ion beam etching, and the etching gas used in the ion beam etching comprises inert gas, such as argon and the like; the chemical etching comprises plasma etching, wherein etching gas adopted by the plasma etching comprises fluorine-containing gas, such as sulfur hexafluoride, carbon tetrafluoride, trifluoromethane and the like; the physical and chemical etching includes reactive ion etching, and the etching gas used in the reactive ion etching includes a gas containing fluorine, chlorine, or sulfur, and may be, for example, any one of or a combination of two or more of chlorine, boron trichloride, sulfur hexafluoride, carbon tetrafluoride, and an inert gas, but is not limited thereto.
In a specific embodiment, the manufacturing method specifically includes: an etching barrier layer is covered on the first surface of the substrate, and then a wavelength conversion layer is covered on the surface of the etching barrier layer.
In a specific embodiment, the manufacturing method further includes: and forming a passivation layer on the first surface of the substrate, wherein the passivation layer fills the gap of the wavelength conversion matrix, and the surface of the passivation layer is flush with or lower than the surface of the wavelength conversion layer.
In one embodiment, a plurality of first self-luminous pixel points are distributed on the first surface of the substrate; and the manufacturing method further comprises the following steps:
covering a first wavelength conversion layer on the first surface of the substrate;
arranging a first mask in a preset area on the surface of the first wavelength conversion layer, wherein the preset area is arranged corresponding to the first self-luminous pixel point;
removing the rest part of the first wavelength conversion layer which is not protected by the first mask by adopting a dry etching mode, thereby forming the wavelength conversion matrix; and the first self-luminous pixel point is superposed with the first wavelength conversion layer to emit first light wavelength.
In a specific embodiment, the manufacturing method further includes: a first filter layer is disposed on the first wavelength conversion layer, the first filter layer capable of passing the first optical wavelength light.
In one embodiment, the first surface of the substrate is distributed with at least a first self-luminous pixel and a second self-luminous pixel; and the manufacturing method further comprises the following steps:
covering a first wavelength conversion layer on the first surface of the substrate;
arranging a first mask in a first area on the surface of the first wavelength conversion layer, wherein the first area is arranged corresponding to the first self-luminous pixel point;
removing the rest part of the first wavelength conversion layer which is not protected by the first mask by adopting a dry etching mode;
covering a second wavelength conversion layer on the first surface of the substrate;
arranging a second mask in a second area on the surface of the second wavelength conversion layer, wherein the second area is arranged corresponding to the second self-luminous pixel point;
removing the rest part of the second wavelength conversion layer which is not protected by the second mask by adopting a dry etching mode, thereby forming the wavelength conversion matrix; the first self-luminous pixel points are superposed with the first wavelength conversion layer to emit first light wavelength, and the second self-luminous pixel points are superposed with the second wavelength conversion layer to emit second light wavelength.
In a specific embodiment, the first and second self-luminous pixel points emit light with the same or different wavelengths, the first and second wavelength conversion layers include photoluminescent materials with the same or different wavelengths, and the first light wavelength is different from the second light wavelength.
In a specific embodiment, the manufacturing method further includes: disposing a first optical filter layer and a second optical filter layer on the first wavelength conversion layer and the second wavelength conversion layer, respectively, the first optical filter layer capable of passing the first optical wavelength light; the second optical filter layer is capable of passing the second optical wavelength light.
In a specific embodiment, the first surface of the substrate is further distributed with third self-luminous pixel points; and the manufacturing method further comprises the following steps:
covering a third wavelength conversion layer on the first surface of the substrate;
arranging a third mask in a third area on the surface of the third wavelength conversion layer, wherein the third area is arranged corresponding to the third self-luminous pixel point;
removing the rest part of the third wavelength conversion layer which is not protected by the third mask by adopting a dry etching mode so as to form the wavelength conversion matrix; and the third self-luminous pixel point is superposed with a third wavelength conversion layer to emit third light wavelength.
In a specific embodiment, the first, second and third self-luminous pixel points emit light of the same or different wavelengths, the first, second and third wavelength conversion layers include photoluminescent materials of the same or different wavelengths, and the first, second and third wavelength lights are different.
In a specific embodiment, the manufacturing method further includes: a first filter layer, a second filter layer, and a third filter layer are respectively disposed on the first wavelength conversion layer, the second wavelength conversion layer, and the third wavelength conversion layer, the first filter layer being capable of passing the first optical wavelength light; the second filter layer is capable of passing the second optical wavelength light, and the third filter layer passes the third optical wavelength light.
In a specific embodiment, the manufacturing method further includes: removing the mask after forming the wavelength conversion matrix.
An embodiment of the present invention further provides a microdisplay, which includes:
the display device comprises a substrate, a light source and a light emitting diode, wherein the substrate is provided with a first surface, and a plurality of self-luminous pixel points are distributed on the first surface;
a wavelength conversion matrix comprising at least one wavelength conversion layer disposed on the first surface of the substrate, the wavelength conversion layer comprising a mask protection region and a dry etching region, the mask protection region corresponding to a portion or all of the self-emissive pixel sites, the wavelength conversion layer overlying a portion or all of the self-emissive pixel sites.
In one embodiment, the substrate comprises silicon-based CMOS or thin film field effect transistors, etc.
In one embodiment, the self-luminous pixel points comprise micro light emitting diodes, wherein the plurality of self-luminous pixel points are distributed in an array, and the pitch of the plurality of self-luminous pixel points is 1 to 100 μm.
In one embodiment, the first surface of the substrate is distributed with first self-luminous pixels, the wavelength conversion matrix includes a first wavelength conversion layer, the first wavelength conversion layer is correspondingly covered with the first self-luminous pixels, and the first self-luminous pixels overlap the first wavelength conversion layer to emit light with a first wavelength.
In one embodiment, a first optical filter layer is further disposed on the first wavelength conversion layer, and the first optical filter layer is capable of passing the first optical wavelength light.
In a specific embodiment, a first and a second self-luminous pixel points are distributed on a first surface of the substrate, the wavelength conversion matrix includes a first wavelength conversion layer and a second wavelength conversion layer, the first and the second wavelength conversion layers are respectively and correspondingly covered with the first and the second self-luminous pixel points, the first self-luminous pixel point is overlapped with the first wavelength conversion layer to emit light with a first wavelength, and the second self-luminous pixel point is overlapped with the second wavelength conversion layer to emit light with a second wavelength;
the first self-luminous pixel point and the second self-luminous pixel point emit light with the same or different wavelengths, photoluminescent materials contained in the first wavelength conversion layer and the second wavelength conversion layer are the same or different, and the first light wavelength light and the second light wavelength light are different.
In one embodiment, a first optical filter layer and a second optical filter layer are further disposed on the first wavelength conversion layer and the second wavelength conversion layer, respectively, wherein the first optical filter layer can pass the first optical wavelength light, and the second optical filter layer can pass the second optical wavelength light.
In a specific embodiment, the first surface of the substrate further has third self-emissive pixels distributed thereon, the wavelength conversion matrix further includes a third wavelength conversion layer overlying the third self-emissive pixels, and the third self-emissive pixels superpose the third wavelength conversion layer to emit light of a third wavelength;
the first self-luminous pixel point, the second self-luminous pixel point and the third self-luminous pixel point emit the same or different light wavelengths, photoluminescent materials contained in the first wavelength conversion layer, the second wavelength conversion layer and the third wavelength conversion layer are the same or different, and the first light wavelength light, the second light wavelength light and the third light wavelength light are different.
In one embodiment, a third filter layer is disposed on the third wavelength conversion layer, and the third filter layer is capable of passing the third optical wavelength light.
In a specific embodiment, the first, second, and third first filter layers include, but are not limited to, an organic color filter photoresist, an inorganic distributed dragging reflector, or the like.
In one embodiment, the wavelength conversion layer contains a wavelength conversion material comprising a photoluminescent material, a polymer film material, and a solvent.
In one embodiment, the photoluminescent material comprises a phosphor or quantum dots, and the phosphor may be yttrium aluminum garnet, cerium phosphor, (oxy) nitride phosphor, silicate phosphor and Mn4+Activated fluoride phosphor, etc., which may be group II-VI compound quantum dots (e.g., cadmium sulfide, cadmium selenide, cadmium telluride, zinc oxide, zinc selenide, zinc telluride, etc.), group III-V compound quantum dots (e.g., gallium arsenide, gallium phosphide, gallium antimonide, mercury sulfide, mercury selenide, mercury antimonide, indium arsenide, indium phosphide, indium antimonide, aluminum arsenide, aluminum phosphide, aluminum antimonide, etc.), perovskite quantum dots, of course, the photoluminescent material may also be an organic dye, etc.; the polymer film material includes, but is not limited to, acrylic, polyethylene, or resin; the solvent is at least used to assist in dissolving the photoluminescent material into the polymer film material, and the solvent is propylene glycol methyl ether acetate, toluene or alcohol, but is not limited thereto.
In a specific embodiment, the photoluminescent material includes phosphor or quantum dots, the polymer film material includes any one or a combination of two or more of acrylic acid, polyethylene and resin, and the solvent includes any one or a combination of two or more of propylene glycol methyl ether acetate, toluene and alcohol, but is not limited thereto.
In a specific embodiment, a passivation layer is further disposed on the first surface of the substrate, the passivation layer fills the gap of the wavelength conversion matrix, and a surface of the passivation layer is flush with or lower than a surface of the wavelength conversion layer.
In a specific embodiment, the material of the passivation layer includes any one or a combination of two or more of organic black matrix photoresist, color filter photoresist, and polyimide, but is not limited thereto.
In a specific embodiment, the first surface of the substrate is further covered with an etching barrier layer, and the wavelength conversion layer and the passivation layer are disposed on the etching barrier layer.
In a specific embodiment, the material of the etching stop layer includes any one or a combination of two or more of silicon dioxide, silicon nitride, and aluminum oxide, but is not limited thereto.
It should be noted that the pixel point with self-luminescence provided with the first wavelength is an initial luminescence, which may be monochromatic light, such as ultraviolet, blue, green, etc.; of course, the light can also be bicolor light, such as ultraviolet plus blue, blue plus green, and the like; but may of course also be white light, such as red, green, blue, yellow, etc. If the initial emission contains a certain wavelength required for the micro-display to be realized, the wavelength-converting material corresponding to that wavelength may be omitted, for example, if the initial emission of the display panel (which includes the driving panel and the self-luminous pixel) is blue, the corresponding blue wavelength-converting material is not needed.
Generally, the wavelength of the light converted by the wavelength conversion layer is longer than that of the primary light, and the light having the second wavelength formed after the conversion may be monochromatic light (such as blue, green, yellow, red light, etc.) or polychromatic light (such as blue-green, blue-red, red-green, blue-green-red, etc.). For example, if the initial emission of the display panel is blue, it can be converted to a monochromatic green display using only a green wavelength converting material, although any other color combination is possible as long as the corresponding color converting material is selected.
The embodiments, implementations, principles, and so on of the present invention will be further explained with reference to the drawings and the detailed embodiments, and unless otherwise specified, the processes of epitaxy, coating, etching, and so on used in the embodiments of the present invention may be known to those skilled in the art.
Example 1
Referring to fig. 2, a microdisplay includes a driving panel 10, self-luminous pixel points 20, an etching stopper 30, wavelength conversion layers 41, 42, 43, and a passivation layer 60, wherein the self-luminous pixel points 20 are disposed on the driving panel 10, the etching stopper 30 is stacked on the driving panel 10 and covers the self-luminous pixel points 20, the wavelength conversion layers 41, 42, 43 and the passivation layer 60 are disposed on the etching stopper 30, the wavelength conversion layers 41, 42, 43 correspond to the self-luminous pixel points 20, the passivation layer 60 is disposed between the wavelength conversion layers 41, 42, 43, and the self-luminous pixel points 20 stacked on the wavelength conversion layers 41, 42, 43 can emit light with a designated wavelength.
In one embodiment, the driving panel 10 may be a thin film transistor, such as a silicon-based CMOS.
In one embodiment, the self-luminous pixel 20 may be a micro light emitting diode formed based on an inorganic semiconductor material, such as gallium nitride, aluminum gallium nitride, gallium arsenide, aluminum gallium indium phosphide, or a micro organic light emitting diode formed based on an organic material, such as a small molecule, a polymer, a phosphorescent material, or the like.
In one embodiment, the self-luminous pixel 20 provides an initial light with a first wavelength, which may be a monochromatic light, such as uv, blue, green, etc.; of course, the light can also be bicolor light, such as ultraviolet plus blue, blue plus green, and the like; but may of course also be white light, such as red, green, blue, yellow, etc. If the primary emission contains light of a certain wavelength required for the microdisplay to be achieved, the wavelength converting layer (material) corresponding to that wavelength can be omitted, e.g. if the primary emission of the display panel is blue, the corresponding blue wavelength converting material is not needed anymore.
In one embodiment, the self-luminous pixels 20 may be disposed in plural numbers, the plural self-luminous pixels 20 are distributed in a first area of the driving panel 10, and the plural self-luminous pixels 20 may be distributed in a patterned array, wherein the first area may be considered as a light-emitting area.
In one embodiment, the pixel pitch size of the self-luminous pixel 20 is 1-100 μm, and the resolution of the pixel of the self-luminous pixel 20 can be flexibly set, such as VGA (640 × 480), XGA (1024 × 768), FHD (1920 × 1080), and the like.
In a specific embodiment, the etching stop layer 30 may protect a bottom display panel (the display panel includes a driving panel and self-luminous pixels) during the dry etching of the wavelength conversion layer, and the material of the etching stop layer 30 may be an inorganic semiconductor material, such as silicon dioxide, silicon nitride, aluminum oxide, or the like.
In one embodiment, the wavelength conversion layers 41, 42, 43 are disposed on the etching stop layer 30 and at least completely cover the self-luminous pixel 20, and it is understood that the wavelength conversion layers 41, 42, 43 completely overlap with the front projection of the self-luminous pixel 20, or the self-luminous pixel 20 is located in the front projection of the wavelength conversion layers 41, 42, 43.
In an embodiment, a plurality of wavelength conversion layers 41, 42, 43 may be disposed, the wavelength conversion layers 41, 42, 43 may be distributed in a patterned array, and the distribution pattern of the wavelength conversion layers 41, 42, 43 is the same as or similar to the distribution pattern of the self-luminous pixel points 20.
In a specific embodiment, the wavelength conversion layers 41, 42, 43 may be at least one of a red wavelength conversion layer, a green wavelength conversion layer, a blue wavelength conversion layer, and a yellow wavelength conversion layer, for example, the wavelength conversion layer 41 is a red wavelength conversion layer, the wavelength conversion layer 42 is a green wavelength conversion layer, and the wavelength conversion layer 43 is a blue wavelength conversion layer.
It should be noted that the second wavelength of the light converted by the wavelength conversion layers 41, 42, and 43 is generally longer than the first wavelength of the original light, and the light with the second wavelength formed after the conversion may be monochromatic light (e.g., blue, green, yellow, red light, etc.) or polychromatic light (e.g., blue-green, blue-red, red-green, blue-green-red, etc.). For example, if the initial emission of the display panel is blue, it can be converted to a monochromatic green display using only a green wavelength converting material, although any other color combination is possible as long as the corresponding color converting material is selected.
In a specific embodiment, the passivation layer 60 is disposed on the second region of the etch stop layer 30, that is, it is understood that the passivation layer 60 is disposed in the gap between the wavelength conversion layers 41, 42, 43, and the thickness of the passivation layer 60 may be consistent with the thickness of the wavelength conversion layers 41, 42, 43; the passivation layer may be made of a photoresist, for example, an organic black matrix photoresist, a color filter photoresist, or the like, and the specific material may be polyimide, or the like.
In one embodiment, the wavelength conversion layers 41, 42, 43 are further provided with corresponding filter layers 51, 52, 53, and the filter layers 51, 52, 53 allow light with the second wavelength formed by conversion of the wavelength conversion layers 41, 42, 43 to pass through, but prevent light with the first wavelength from passing through.
In a specific embodiment, the filter layers 51, 52 and 53 may be at least one of a red filter layer, a green filter layer, a blue filter layer and a yellow filter layer, for example, the filter layer 51 may be a red filter layer, the filter layer 52 may be a green filter layer, and the filter layer 53 may be a blue filter layer.
In a specific embodiment, the filter layers 51, 52, 53 may be organic color filter photoresists or inorganic distributed dragging reflectors (e.g., multilayer silicon dioxide/titanium dioxide deposited by e-beam evaporation or chemical vapor deposition, etc.) or the like.
It should be noted that, if the wavelength conversion layer can absorb most of the initial light emission, the corresponding filter layer may not be provided.
Referring to fig. 3a to 3l, a method for fabricating a wavelength conversion matrix for a microdisplay includes the following steps:
1) referring to fig. 3a, a display panel is provided, the display panel includes a driving panel 10 and a plurality of self-luminous pixels 20 disposed on the driving panel 10, the self-luminous pixels 20 being capable of providing light having a first wavelength; the plurality of self-luminous pixel points 20 may be distributed in a graphical array, and the self-luminous pixel points 20 may be full-color pixel points, for example, the distribution graph of the plurality of self-luminous pixel points 20 may be as shown in fig. 4, the arrangement of red, green and blue pixel points in the full-color pixel points may be as shown in fig. 5a, 5b and 5c, 21 in the figure is a red pixel point, 22 is a green pixel point, and 23 is a blue pixel point, and the arrangement mode of the pixel points may be flexibly adjusted without special limitation;
note that, a side surface of the driving panel provided with the self-luminous pixel points 20 may be a light emitting surface;
2) referring to fig. 3b, an etching barrier layer 30 is formed on the light emitting surface of the driving panel 10, the etching barrier layer 30 can protect the bottom display panel (the display panel includes the driving panel and the self-luminous pixels) during the dry etching of the wavelength conversion layer, and the material of the etching barrier layer 30 can be an inorganic semiconductor material, such as silicon dioxide, silicon nitride, aluminum oxide, etc.;
3) referring to fig. 3c, a red wavelength conversion material (also referred to as a red wavelength conversion material) is coated on the surface of the etching stop layer 30, and the red wavelength conversion layer 41 is formed after curing;
4) referring to fig. 3d, a first mask 71 is disposed on the red wavelength conversion layer 41, and the first mask 71 covers a portion of the red wavelength conversion layer 41, and it should be noted that the first mask 71 corresponds to a portion of the self-luminous pixels 20, and the correspondence indicates that the shape, area, and distribution pattern of the first mask 71 are the same as the shape, area, and distribution pattern of the portion of the self-luminous pixels 20;
5) referring to fig. 3e, the red wavelength conversion layer 41 not covered by the first mask 71 is removed by dry etching, and the remaining part of the red wavelength conversion layer 41 is correspondingly disposed above the part of the self-luminous pixel 20; the dry etching comprises physical etching, chemical etching or a combination of the physical etching and the chemical etching, wherein the physical etching can be ion beam etching, typical etching gas adopted by the ion beam etching can be argon gas and the like, the chemical etching can be plasma etching, and typical etching gas adopted by the plasma etching can be sulfur hexafluoride, carbon tetrafluoride and the like; the physical etching and the chemical etching can be combined by reactive ion etching, and typical etching gas adopted by the reactive ion etching can be chlorine, boron trichloride, sulfur hexafluoride, carbon tetrafluoride, argon and the like;
6) referring to fig. 3f, a green (green) wavelength conversion material is coated on the surface of the etching stop layer 30, and is cured to form the green (green) wavelength conversion layer 42, and then a second mask 72 is disposed on the green wavelength conversion layer 42, where the second mask 72 covers a part of the green wavelength conversion layer 42, it should be noted that the second mask 72 corresponds to a part of the self-luminous pixel 20, where the correspondence means that the shape, area, and distribution pattern of the second mask 72 are the same as those of the part of the self-luminous pixel 20, and there is no overlapping area in the front projection area of the second mask 72 and the first mask 71;
7) referring to fig. 3g, the green wavelength conversion layer 42 not covered by the second mask 72 is removed by dry etching, and the remaining part of the green wavelength conversion layer 42 is correspondingly disposed above the part of the self-luminous pixels 20;
8) referring to fig. 3h, referring to steps 3) -5) or 6) -7), coating a blue (blue) wavelength conversion material on the surface of the etching stop layer 30, curing to form the blue (blue) wavelength conversion layer 43, disposing a third mask 73 on the blue wavelength conversion layer 43, where the third mask 73 covers a part of the blue wavelength conversion layer 43, and it should be noted that the third mask 73 corresponds to a part of the self-luminous pixel 20, where the correspondence means that the shape, area, and distribution pattern of the third mask 73 are the same as the shape, area, and distribution pattern of the part of the self-luminous pixel 20, and there is no overlapping area in the forward projection areas of the third mask 73, the second mask 72, and the first mask 71, and then removing the blue wavelength conversion layer 43 not covered by the third mask 73 by dry etching, the remaining part of the blue wavelength conversion layer 43 is correspondingly arranged above the part of the self-luminous pixel points 20;
10) referring to fig. 3i, a passivation layer 60 is formed on the surface of the etch stop layer 30, and the passivation layer 60 is disposed in the gap between the red wavelength conversion layer 41, the green wavelength conversion layer 42, and the blue wavelength conversion layer 43;
11) referring to fig. 3j, the first mask 71, the second mask 72 and the third mask 73 are removed;
12) referring to fig. 3k and 3l, a red (red) filter layer 51, a green (green) filter layer, and a blue (blue) filter layer 53 are correspondingly formed on the red wavelength conversion layer 41, the green wavelength conversion layer 42, and the blue wavelength conversion layer 43, respectively.
It is noted that the red, green or blue wavelength converting material comprises a photoluminescent material, a polymer film material and a solvent.
In one embodiment, the photoluminescent material comprises a phosphor or quantum dots, and the phosphor may be yttrium aluminum garnet, cerium phosphor, (oxy) nitride phosphor, silicate phosphor and Mn4+Activated fluoride phosphor, etc., which may be group II-VI compound quantum dots (e.g., cadmium sulfide, cadmium selenide, cadmium telluride, zinc oxide, zinc selenide, zinc telluride, etc.), group III-V compound quantum dots (e.g., gallium arsenide, gallium phosphide, gallium antimonide, mercury sulfide, mercury selenide, mercury antimonide, indium arsenide, indium phosphide, indium antimonide, aluminum arsenide, aluminum phosphide, aluminum antimonide, etc.), perovskite quantum dots, of course, the photoluminescent material may also be an organic dye, etc.
In a specific embodiment, the polymer film material includes, but is not limited to, acrylic, polyethylene, or a resin, the solvent at least serves to assist in dissolving the photoluminescent material into the polymer film material, and the solvent is propylene glycol methyl ether acetate, toluene, or alcohol, but is not limited thereto.
In a specific embodiment, the first, second, and third masks include a semiconductor mask, a photoresist mask, or a metal mask, wherein the semiconductor mask may be made of silicon dioxide, silicon nitride, or aluminum oxide, the metal mask may be a plurality of metal layers stacked on each other, and the metal layers include cadmium, aluminum, nickel, gold, titanium, or platinum.
In a specific embodiment, the red, green and blue filter layers comprise organic color filter photoresist or inorganic distributed dragging reflectors, etc.
The method for manufacturing the wavelength conversion matrix for the micro display has the advantages that the process flow is simple, the operation is easy, and the controllability is better.
The graph of the wavelength conversion layer of the method for manufacturing the wavelength conversion matrix of the micro display is obtained by dry etching, and the etching mask is defined by using high-resolution photoresist through other photoetching steps and metallization steps, so that the resolution of the obtained wavelength conversion matrix is higher; in addition, the photoluminescent material in the method for manufacturing the wavelength conversion matrix of the microdisplay provided by the embodiment of the invention can be dispersed in the polymer film material at a relatively high concentration, and on the basis, the relatively thick photoluminescent material film can be realized by adjusting the process parameters of photoetching and dry etching, so that high conversion efficiency is obtained.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.

Claims (23)

1. A method of fabricating a microdisplay, comprising:
providing a substrate, wherein the substrate is provided with a first surface, and a plurality of self-luminous pixel points are distributed on the first surface;
covering a wavelength conversion layer on the first surface of the substrate;
covering a mask on the surface of the wavelength conversion layer, wherein the mask is arranged corresponding to part or all of the self-luminous pixel points;
and removing the rest part of the wavelength conversion layer which is not protected by the mask by adopting a dry etching mode, thereby forming a wavelength conversion matrix.
2. The method of manufacturing according to claim 1, wherein: the mask is a hard mask, and the hard mask is any one or the combination of more than two of a dielectric material mask, a photoresist mask and a metal mask; the dry etching method comprises physical etching, chemical etching or physical chemical etching.
3. The method of manufacturing according to claim 1, comprising: an etching barrier layer is covered on the first surface of the substrate, and then a wavelength conversion layer is covered on the surface of the etching barrier layer.
4. The method of manufacturing according to claim 1, further comprising: and forming a passivation layer on the first surface of the substrate, wherein the passivation layer fills the gap of the wavelength conversion matrix, and the surface of the passivation layer is flush with or lower than the surface of the wavelength conversion layer.
5. The method of manufacturing according to claim 1, wherein: a plurality of first self-luminous pixel points are distributed on the first surface of the substrate; and the manufacturing method further comprises the following steps:
covering a first wavelength conversion layer on the first surface of the substrate;
arranging a first mask in a preset area on the surface of the first wavelength conversion layer, wherein the preset area is arranged corresponding to the first self-luminous pixel point;
removing the rest part of the first wavelength conversion layer which is not protected by the first mask by adopting a dry etching mode, thereby forming the wavelength conversion matrix; and the first self-luminous pixel point is superposed with the first wavelength conversion layer to emit first light wavelength.
6. The method of manufacturing according to claim 5, further comprising: a first filter layer is disposed on the first wavelength conversion layer, the first filter layer capable of passing the first optical wavelength light.
7. The method of manufacturing according to claim 1, wherein: the first surface of the substrate is at least distributed with first self-luminous pixel points and second self-luminous pixel points; and the manufacturing method further comprises the following steps:
covering a first wavelength conversion layer on the first surface of the substrate;
arranging a first mask in a first area on the surface of the first wavelength conversion layer, wherein the first area is arranged corresponding to the first self-luminous pixel point;
removing the rest part of the first wavelength conversion layer which is not protected by the first mask by adopting a dry etching mode;
covering a second wavelength conversion layer on the first surface of the substrate;
arranging a second mask in a second area on the surface of the second wavelength conversion layer, wherein the second area is arranged corresponding to the second self-luminous pixel point;
removing the rest part of the second wavelength conversion layer which is not protected by the second mask by adopting a dry etching mode, thereby forming the wavelength conversion matrix; the first self-luminous pixel points are superposed with the first wavelength conversion layer to emit first light wavelength, and the second self-luminous pixel points are superposed with the second wavelength conversion layer to emit second light wavelength.
8. The method of manufacturing according to claim 7, wherein: the first self-luminous pixel point and the second self-luminous pixel point emit light with the same or different wavelengths, photoluminescent materials contained in the first wavelength conversion layer and the second wavelength conversion layer are the same or different, and the first light wavelength light is different from the second light wavelength light.
9. The method of manufacturing according to claim 8, further comprising: disposing a first optical filter layer and a second optical filter layer on the first wavelength conversion layer and the second wavelength conversion layer, respectively, the first optical filter layer capable of passing the first optical wavelength light; the second optical filter layer is capable of passing the second optical wavelength light.
10. The method of manufacturing according to claim 7, wherein: third self-luminous pixel points are further distributed on the first surface of the substrate; and the manufacturing method further comprises the following steps:
covering a third wavelength conversion layer on the first surface of the substrate;
arranging a third mask in a third area on the surface of the third wavelength conversion layer, wherein the third area is arranged corresponding to the third self-luminous pixel point;
and removing the rest part of the third wavelength conversion layer which is not protected by the third mask by adopting a dry etching mode, thereby forming the wavelength conversion matrix, wherein the third self-luminous pixel point is superposed with the third wavelength conversion layer to emit third light wavelength.
11. The method of manufacturing according to claim 10, wherein: the first self-luminous pixel point, the second self-luminous pixel point and the third self-luminous pixel point emit the same or different light wavelengths, photoluminescent materials contained in the first wavelength conversion layer, the second wavelength conversion layer and the third wavelength conversion layer are the same or different, and the first light wavelength light, the second light wavelength light and the third light wavelength light are different.
12. The method of manufacturing according to claim 11, further comprising: a first filter layer, a second filter layer, and a third filter layer are respectively disposed on the first wavelength conversion layer, the second wavelength conversion layer, and the third wavelength conversion layer, the first filter layer being capable of passing the first optical wavelength light; the second filter layer is capable of passing the second optical wavelength light, and the third filter layer passes the third optical wavelength light.
13. The method of manufacturing according to claim 1, further comprising: removing the mask after forming the wavelength conversion matrix.
14. A microdisplay, comprising:
the display device comprises a substrate, a light source and a light emitting diode, wherein the substrate is provided with a first surface, and a plurality of self-luminous pixel points are distributed on the first surface;
a wavelength conversion matrix comprising at least one wavelength conversion layer disposed on the first surface of the substrate, the wavelength conversion layer comprising a mask protection region and a dry etching region, the mask protection region corresponding to a portion or all of the self-emissive pixel sites, the wavelength conversion layer overlying a portion or all of the self-emissive pixel sites.
15. The microdisplay of claim 14 in which: the self-luminous pixel points comprise micro light-emitting diodes, wherein the plurality of self-luminous pixel points are distributed in an array, and the distance between the plurality of self-luminous pixel points is 1-100 mu m.
16. The microdisplay of claim 14 in which: the wavelength conversion matrix comprises a first wavelength conversion layer, the first wavelength conversion layer is correspondingly covered with first self-luminous pixel points, and the first self-luminous pixel points are overlapped with the first wavelength conversion layer to emit first light wavelength.
17. The microdisplay of claim 16 in which: the first wavelength conversion layer is further provided with a first filter layer, and the first filter layer can enable the first optical wavelength light to pass through.
18. The microdisplay of claim 14 in which: the wavelength conversion matrix comprises a first wavelength conversion layer and a second wavelength conversion layer, the first wavelength conversion layer and the second wavelength conversion layer are respectively and correspondingly covered with first self-luminous pixel points and second self-luminous pixel points, the first self-luminous pixel points are overlapped with the first wavelength conversion layer to emit first light wavelength, and the second self-luminous pixel points are overlapped with the second wavelength conversion layer to emit second light wavelength;
the first self-luminous pixel point and the second self-luminous pixel point emit light with the same or different wavelengths, photoluminescent materials contained in the first wavelength conversion layer and the second wavelength conversion layer are the same or different, and the first light wavelength light and the second light wavelength light are different.
19. The microdisplay of claim 18 in which: the first wavelength conversion layer and the second wavelength conversion layer are respectively provided with a first filter layer and a second filter layer, the first filter layer can enable the first optical wavelength light to pass through, and the second filter layer can enable the second optical wavelength light to pass through.
20. The microdisplay of claim 18 in which: the first surface of the substrate is also distributed with third self-luminous pixel points, the wavelength conversion matrix further comprises a third wavelength conversion layer covering the third self-luminous pixel points, and the third self-luminous pixel points are superposed with the third wavelength conversion layer to emit third light wavelength;
the first self-luminous pixel point, the second self-luminous pixel point and the third self-luminous pixel point emit the same or different light wavelengths, photoluminescent materials contained in the first wavelength conversion layer, the second wavelength conversion layer and the third wavelength conversion layer are the same or different, and the first light wavelength light, the second light wavelength light and the third light wavelength light are different.
21. The microdisplay of claim 20 in which: a third filter layer is further disposed on the third wavelength conversion layer, the third filter layer passing the third optical wavelength light.
22. The microdisplay of claim 14 in which: the first surface of the substrate is further provided with a passivation layer, the passivation layer fills gaps of the wavelength conversion matrix, and the surface of the passivation layer is flush with the surface of the wavelength conversion layer or lower than the surface of the wavelength conversion layer.
23. The microdisplay of claim 14 in which: an etching barrier layer is arranged between the first surface of the substrate and the wavelength conversion layer.
CN202111286417.5A 2021-11-01 2021-11-01 Micro display and manufacturing method thereof Pending CN113990999A (en)

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