CN104835783A - Quantum dot film array preparation method - Google Patents
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- CN104835783A CN104835783A CN201510238602.5A CN201510238602A CN104835783A CN 104835783 A CN104835783 A CN 104835783A CN 201510238602 A CN201510238602 A CN 201510238602A CN 104835783 A CN104835783 A CN 104835783A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000011241 protective layer Substances 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- 238000004528 spin coating Methods 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 230000010355 oscillation Effects 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 239000002086 nanomaterial Substances 0.000 abstract description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 239000003086 colorant Substances 0.000 description 7
- 238000005265 energy consumption Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention belongs to the technical field of nano materials, nano structures and display application, and especially relates to a quantum dot film array preparation method. The method is characterized by comprising the following steps: a, cleaning a substrate (1); b, evenly applying photoresist (2) to the substrate (1), photo-etching the photoresist (2), and forming a grating pattern (3) on the substrate (1); c, depositing first-type quantum dots (4) on the substrate (1); d, plating the first-type quantum dots (4) with a protective layer (5); e, removing the photoresist (2); f, evenly applying photoresist (2) to the substrate (1) again, overlaying the photoresist (2), and forming a grating pattern (3') on the substrate (1); g, depositing second-type quantum dots (6) on the substrate (1); h, plating the second-type quantum dots (6) with a protective layer (5); and e, removing the photoresist (2).
Description
Technical field
The invention belongs to nano material and nanostructure and display application technical field, particularly relate to a kind of quantum dot film array preparation method.
Background technology
The energy that the current mankind are used for various field of information display account for significant proportion in global energy consumption.In numerous display device, liquid crystal display becomes the one the most ripe in current various Display Technique, occupation rate of market is the highest due to the advantage in size, picture and technical maturity etc.But, because liquid crystal material itself is not luminescent material, therefore just need in a liquid crystal display to add a backlight, and backlight energy consumption accounts for 75% of display module total energy consumption.Display energy consumption occupies significant proportion in industrial energy consumption, such as in the equipment such as display, panel computer, smart mobile phone, display energy consumption is more than 50%.In lcd technology, conventional art first white light backlight is spatially separated into red-green-blue by absorption-type color filter array, then regulate its respective light intensity ratio to realize colored output by liquid crystal panel, backlight utilance is less than 10%.Therefore, how to improve the optical energy utilization efficiency of backlight in liquid crystal display, reduce the energy consumption of liquid crystal display, realize energy-conservation display, become the focus of current Display Technique research aspect.
In display field, quanta point material shows for quantum dot LED the earliest.The application on a liquid crystal display of current quantum dot film technology successfully improves display color gamut, but display energy-saving effect is not obvious.Main cause is that current quanta point material remains and arranges in a random way on film, that is red-green-blue light is also spatially send at random, in this case, in order to the intensity of the pixel of liquid crystal to red-green-blue light can be utilized exactly to modulate, the space utilizing color filter array to carry out three primary colors is still needed to be separated.Light like this with regard to making many positions and the unmatched quantum dot of colour filter pixel send is wasted.Such as send the quantum dot of ruddiness, if it is on the position of blue color filter just, so its light sent will be absorbed, thus could not utilize in display.If the quantum dot sending different colours light can be lined up regularly, prepare a kind of quantum dot film array device, and be spatially mapped with the pixel of different colours in display, the three primary colors light sent from quantum dot film so just directly can be subject to the modulation of liquid crystal material, do not need again through color filter array, thus the waste of luminous energy can be avoided.And quantum dot array method of the prior art uses electrically excited method to realize quantum dot light emitting and quantum dot Display Technique usually, quantum dot film thickness is at below 100nm, the photic conversion efficiency of quantum dot is lower, and is not suitable for the optical excitation quantum dot array for liquid crystal display.
Summary of the invention
The present invention, for overcoming at least one defect (deficiency) described in above-mentioned prior art, provides a kind of quantum dot film array preparation method.
The present invention is intended to solve the problems of the technologies described above at least to a certain extent.
For solving the problems of the technologies described above, technical scheme of the present invention is as follows:
A kind of quantum dot film array preparation method, comprises following steps:
A. substrate is cleaned up;
B. even resist coating on substrate; Photoetching treatment is carried out to photoresist, substrate forms grating pattern;
C. at the first quantum dot of deposited on substrates;
D. plating on the first quantum dot;
E. photoresist is removed;
F. even resist coating on substrate again; Alignment process is carried out to photoresist, substrate forms grating pattern;
G. at deposited on substrates the second quantum dot;
H. plating on the second quantum dot;
I. photoresist is removed.
Further, the first quantum dot described is red quantum point, the second quantum dot is green quantum dot; Or the first quantum dot is green quantum dot, the second quantum dot is red quantum point.
Further, in described step a, substrate is ito glass, and described cleaning way is successively through the cleaning of acetone sonic oscillation, the cleaning of isopropyl alcohol sonic oscillation, the cleaning of deionized water sonic oscillation and hot plate drying and processing by ito glass.
Further, in described step b, the mode of resist coating is: successively respectively with the even spin coating photoresist of different speed on substrate.
Further, the photoetching method in described step b is: (a) front baking, is placed on hot plate by the substrate being painted with photoresist and toasts; B () exposes, expose under the substrate after baking is placed on maskless lithography machine; Dry after (c), the substrate after exposure is placed on hot plate and toasts; D () is developed, the substrate that rear baking completes is immersed in developer solution and develops.
Further, described protective layer is silicon dioxide layer of protection.
Further, the mode of photoresist is removed for be immersed in acetone soln substrate to remove photoresist.
Compared with prior art, the beneficial effect of technical solution of the present invention is:
The present invention proposes a kind of quantum dot film array arrangement.By regularly arranged for the two amounts point with different emission wavelength, when on the blue light illumination that LED in backlight sends to quantum dot array, its energy will be absorbed by the quantum dot on different array, then sends green glow and ruddiness respectively.Because quanta point material has high fluorescence conversion efficiency characteristic, this array display packing just spatially can obtain the efficient three primary colors light (wherein blue light components is directly obtained by backlight) be separated, thus realizes the efficient Output Display Unit of three primary colors light.Compared with currently marketed quantum dot random distribution type display screen, the light energy that quantum dot can send by quantum dot array type display screen is all used for display, decreases the energy loss in three primary colors separation process to greatest extent.
In addition, the present invention has developed the technology that a kind of lift-off of utilization technique prepares array quantum dot.First to arrange the first quantum dot, by photoresist uniform fold on transparent substrates ito glass, utilize mask-free photolithography technology to prepare target pattern subsequently; Then spin coating one deck quantum dot; Then on quantum dot layer, utilize magnetron sputtering method to grow the thin layer of silicon dioxide of the about 70nm of one deck as at subsequent handling and one deck quantum dot protective layer in using in the future, ensure the steady operation of quantum dot screen; Finally by removing photoresist, liquid removes photoresist, reaches and removes and liquid crystal display pixel not correspondence position quanta point material, realize the object of the array distribution of single quantum dot.Then arrangement the second quantum dot, by micro-nano alignment process, the substrate completing the arrangement of the first quantum dot adopts same steps to realize the array distribution of the second quantum dot.
Accompanying drawing explanation
Fig. 1 is quantum dot array Manufacturing Techniques route map.
Fig. 2 is photoresist spin coating schematic diagram of the present invention.
Fig. 3 is that photolithography patterning substrate of the present invention makes schematic diagram.
Fig. 4 is that red quantum spot deposition of the present invention makes schematic diagram.
Fig. 5 is first time silica deposit making schematic diagram of the present invention.
Fig. 6 is the making schematic diagram that removes photoresist first time of the present invention.
Fig. 7 is second time photoresist spin coating schematic diagram of the present invention.
Fig. 8 is that alignment patterned substrate of the present invention makes schematic diagram.
Fig. 9 is that green quantum spot deposition of the present invention makes schematic diagram.
Figure 10 is that second time silica deposit of the present invention makes schematic diagram.
Figure 11 is that second time of the present invention is removed photoresist making schematic diagram.
Figure 12 is that (wherein blackstreak is exposure area to the photoengraving pattern that uses of the present invention, and width is 50 microns, and white stripes is non-exposed areas, and width is 25 microns; Right-angled intersection on four angles of pattern is overlay mark).
Figure 13 is the SEM sectional view of photoresist after the present invention's first time photoetching, and photoresist cross section is reverse trapezoid shape.
Figure 14 is the fluorogram of red green quantum dot array prepared by the present invention.
Accompanying drawing, only for exemplary illustration, can not be interpreted as the restriction to this patent; In order to better the present embodiment is described, some parts of accompanying drawing have omission, zoom in or out, and do not represent the size of actual product; To those skilled in the art, in accompanying drawing, some known features and explanation thereof may be omitted is understandable; The corresponding same or analogous parts of same or analogous label; The term describing position relationship in accompanying drawing, only for exemplary illustration, can not be interpreted as the restriction to this patent.
Embodiment
Below in conjunction with drawings and Examples, technical scheme of the present invention is described further.
Specific embodiment:
A kind of quantum dot film array preparation method, comprises the following steps:
A. substrate pre-treatment, selects ito glass as substrate 1, and ito glass is dried 10min process through acetone sonic oscillation cleaning 5min, isopropyl alcohol sonic oscillation cleaning 5min, deionized water sonic oscillation cleaning 5min and hot plate successively;
B. optical graving is for pattern 3, utilizes mask-free photolithography technology to prepare grating pattern on the ito glass cleaned, with reference to Figure 12 (the wide 50um of exposure area striped, the wide 25um of non-exposed areas striped, as period-producer grating pattern); Its concrete steps are (as Figure 2-3): (a) spin coating photoresist 2, successively respectively with 500rpm/10s on clean ito glass; 3000rpm/30s even spin coating photoresist AZNLOF2035; B () front baking, is placed on the ito glass of complete for spin coating photoresist on hot plate with 110 DEG C of bakings 1 minute; C () exposes under the ito glass after baking is placed on maskless lithography machine, the time for exposure is 80ms; Dry after (d), the ito glass after exposure is placed on hot plate with 110 DEG C of bakings 1 minute; E () is developed, the ito glass sheet that rear baking completes is immersed in DPD230 developer solution the 90s that develops; The photoresist candy strip Cross Section Morphology developed on rear ito glass is with reference to Figure 13;
C. deposit the first quantum dot 4, be that the red quantum point solution of 9mg/mL drips on ito glass after development by enough concentration, carry out spin coating with 1000rpm/30s, as shown in Figure 4;
D. applying silicon oxide protective layer 5, uses magnetic control sputtering device on the ito glass depositing red quantum point, deposit the silicon dioxide layer of protection that a layer thickness is 70nm, as shown in Figure 5;
E. remove photoresist, the ito glass having deposited silicon dioxide is immersed in 15min in acetone soln and removes photoresist, realize the periodic arrangement of the first quantum dot, as shown in Figure 6;
F. photoetching alignment pattern, as Figure 7-8, the ito glass arranging the first quantum dot carries out alignment, pattern 3 ˊ that 25um generates second time photoetching is moved horizontally to first time photoengraving pattern, overlay mark is utilized to position substrate, with the pattern of second time photoetching, second time photoetching is carried out to substrate, photolithographic procedures refer step b wherein;
G. deposit the second quantum dot 6, be that the green quantum dot solution of 2.5mg/mL drops on the ito glass that alignment completes by enough concentration, carry out spin coating with 1000rpm/30s, as shown in Figure 9;
H. applying silicon oxide protective layer 5, uses magnetic control sputtering device to deposit the silicon dioxide layer of protection that a layer thickness is 70nm on the ito glass of the good green quantum dot of deposition, as shown in Figure 10;
I. remove photoresist template, the ito glass having deposited silicon dioxide is immersed in 15min in acetone soln and removes photoresist, realize the periodic arrangement of two amounts point, as shown in figure 11, its fluorescence distribution figure is with reference to Figure 14.
Obviously, the above embodiment of the present invention is only for example of the present invention is clearly described, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.All any amendments done within the spirit and principles in the present invention, equivalent to replace and improvement etc., within the protection range that all should be included in the claims in the present invention.
Claims (7)
1. a quantum dot film array preparation method, is characterized in that, comprises following steps:
A. substrate (1) is cleaned up;
B. at the upper even resist coating (2) of substrate (1); Photoetching treatment is carried out to photoresist (2), substrate (1) is formed grating pattern (3);
C. at substrate (1) the first quantum dot of upper deposition (4);
D. at the upper plating (5) of the first quantum dot (4);
E. photoresist (2) is removed;
F. again at the upper even resist coating (2) of substrate (1); Alignment process is carried out to photoresist (2), substrate (1) forms grating pattern (3 ');
G. at substrate (1) upper deposition the second quantum dot (6);
H. at the upper plating (5) of the second quantum dot (6);
I. photoresist (2) is removed.
2. quantum dot film array preparation method according to claim 1, is characterized in that, the first quantum dot (4) is red quantum point, the second quantum dot (6) is green quantum dot; Or the first quantum dot (4) is green quantum dot, the second quantum dot (6) is red quantum point.
3. quantum dot film array preparation method according to claim 1, it is characterized in that, in described step a, substrate (1) is ito glass, and described cleaning way is successively through the cleaning of acetone sonic oscillation, the cleaning of isopropyl alcohol sonic oscillation, the cleaning of deionized water sonic oscillation and hot plate drying and processing by ito glass.
4. quantum dot film array preparation method according to claim 1, is characterized in that, in described step b, the mode of resist coating is: upper successively respectively with the even spin coating photoresist (2) of different speed at substrate (1).
5. quantum dot film array preparation method according to claim 1, it is characterized in that, the photoetching method in described step b is: (a) front baking, is placed on hot plate by the substrate (1) being painted with photoresist and toasts; B () exposes, expose under the substrate after baking is placed on maskless lithography machine; Dry after (c), the substrate after exposure is placed on hot plate and toasts; D () is developed, the substrate that rear baking completes is immersed in developer solution and develops.
6. quantum dot film array preparation method according to claim 1, is characterized in that, described protective layer (5) is silicon dioxide layer of protection.
7. quantum dot film array preparation method according to claim 1, is characterized in that, removes the mode of photoresist for be immersed in acetone soln substrate to remove photoresist (2).
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| CN105259694A (en) * | 2015-11-13 | 2016-01-20 | 深圳市华星光电技术有限公司 | Production method of color filter plate and color filter plate |
| CN107761052A (en) * | 2016-08-15 | 2018-03-06 | 张家港康得新光电材料有限公司 | The system that quantum dot film layer and preparation method thereof and on-line continuous make quantum dot film layer |
| WO2018064869A1 (en) * | 2016-10-08 | 2018-04-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for fabricating quantum dot structure |
| CN108919399A (en) * | 2018-06-11 | 2018-11-30 | 中山大学 | High refractive index contrast grating and the preparation method and application thereof |
| CN109031777A (en) * | 2017-07-21 | 2018-12-18 | 苏州星烁纳米科技有限公司 | Quantum dot diaphragm and preparation method thereof and backlight module |
| CN113097242A (en) * | 2021-03-25 | 2021-07-09 | 安徽熙泰智能科技有限公司 | High-resolution micro-display structure and preparation method thereof |
| CN114852954A (en) * | 2022-04-19 | 2022-08-05 | 广东省科学院生物与医学工程研究所 | Preparation method of ordered monocrystalline silicon pyramid microstructure |
| CN115720479A (en) * | 2022-11-23 | 2023-02-28 | 惠科股份有限公司 | Quantum dot layer preparation method and display panel |
| CN118466063A (en) * | 2024-07-11 | 2024-08-09 | 广东欧迪明光电科技股份有限公司 | Production method, device and terminal of LED liquid crystal display backlight module |
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| CN105259694A (en) * | 2015-11-13 | 2016-01-20 | 深圳市华星光电技术有限公司 | Production method of color filter plate and color filter plate |
| CN107761052A (en) * | 2016-08-15 | 2018-03-06 | 张家港康得新光电材料有限公司 | The system that quantum dot film layer and preparation method thereof and on-line continuous make quantum dot film layer |
| US10665749B2 (en) | 2016-10-08 | 2020-05-26 | Qingdao Yichenleishuo Technology Co., Ltd | Manufacturing method of quantum dot structure |
| WO2018064869A1 (en) * | 2016-10-08 | 2018-04-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for fabricating quantum dot structure |
| CN109031777A (en) * | 2017-07-21 | 2018-12-18 | 苏州星烁纳米科技有限公司 | Quantum dot diaphragm and preparation method thereof and backlight module |
| CN108919399A (en) * | 2018-06-11 | 2018-11-30 | 中山大学 | High refractive index contrast grating and the preparation method and application thereof |
| CN113097242A (en) * | 2021-03-25 | 2021-07-09 | 安徽熙泰智能科技有限公司 | High-resolution micro-display structure and preparation method thereof |
| CN114852954A (en) * | 2022-04-19 | 2022-08-05 | 广东省科学院生物与医学工程研究所 | Preparation method of ordered monocrystalline silicon pyramid microstructure |
| CN114852954B (en) * | 2022-04-19 | 2024-04-02 | 广东省科学院生物与医学工程研究所 | Preparation method of ordered monocrystalline silicon pyramid microstructure |
| CN115720479A (en) * | 2022-11-23 | 2023-02-28 | 惠科股份有限公司 | Quantum dot layer preparation method and display panel |
| CN115720479B (en) * | 2022-11-23 | 2024-07-19 | 惠科股份有限公司 | Quantum dot layer preparation method and display panel |
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