CN104143564A - OLED panel and display device - Google Patents
OLED panel and display device Download PDFInfo
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- CN104143564A CN104143564A CN201410350524.3A CN201410350524A CN104143564A CN 104143564 A CN104143564 A CN 104143564A CN 201410350524 A CN201410350524 A CN 201410350524A CN 104143564 A CN104143564 A CN 104143564A
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Abstract
The invention relates to an OLED panel which comprises a plurality of pixel structures. The pixel structures comprise light-emitting units, pixel layers and light absorption layers. The wavelength of emitted light of the light-emitting units is a first wavelength, the pixel layers are formed by quantum dots, the wavelength of exciting light of the quantum dots is a first wavelength, the wavelength of emitted light of the quantum dots is a second wavelength, the light-emitting surfaces of the pixel layers are covered with the light absorption layers, and the light absorption layers are used for absorbing light with the wavelength outside the second wavelength range. The invention further provides a display device. The OLED panel and the display device have the advantages that due to the arrangement of the light absorption layers, the problem that an environment light source affects the pixel layers is solved, and meanwhile the problem of light leakage of color backlight on the pixel layers is solved.
Description
Technical field
The present invention relates to OLED Display Technique field, relate in particular to a kind of oled panel and display unit.
Background technology
Quantum dot (quantumdots, QDs) is comprised of a limited number of atom, and three dimension are all in nanometer scale.Quantum dot is generally spherical or class is spherical, by semi-conducting material (conventionally being formed by II B～VI B or IIIB～VB element) make, stable diameter claims again semiconductor nano at the nano particle of 1～100nm.Can accept excitation light generation fluorescence, because having quantum size effect, it makes it have unique electrical and optical properties, its optical property depends primarily on its size, narrow and the feature of utilizing emitted light spectrum width of its excitation spectrum, can make its emission spectrum cover whole visible region by changing the size of quantum dot and its chemical composition.There is fluorescence intensity high, the feature such as anti-photobleaching ability is strong simultaneously.At present, quanta point material has been applied to the fields such as illumination and backlight and has been used for improving luminous efficiency and colour gamut.
In existing various OLED, RGB tri-look OLED manufacture craft more complicated, and be not easy to realize high-resolution; And white light OLED adopts the structure ratio that adds the color film of RGB on light emitting module to be easier to realize high-resolution, but because the transmitance of the color film of RGB is lower, can affect the brightness of display unit; The OLED that adopts the color film of RGBW, increases display unit brightness by increasing a pixel W, but can affect the colour gamut of display unit like this.Adopt quantum stippling film just can address these problems, yet quantum stippling film is subject to ambient light effects, reduces display quality.
Summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of oled panel and display unit, solve the affect problem of environment light source on pixel layer.
In order to achieve the above object, the technical solution used in the present invention is: a kind of oled panel, comprise a plurality of dot structures, and described dot structure comprises:
Luminescence unit, the radiative wavelength of described luminescence unit is the first wavelength;
The pixel layer being formed by quantum dot, the light wavelength that excites of described quantum dot is described the first wavelength, the radiative wavelength of described quantum dot is second wave length;
The exiting surface of described pixel layer is coated with light absorbing zone, and described light absorbing zone is used for absorbing wavelength in the extraneous light of described second wave length.
Further, the utilizing emitted light of described luminescence unit is black light, and described light absorbing zone is for for absorbing the UV absorption layer of the ultraviolet light of the black light that sees through from described pixel layer and surround lighting.
Further, described UV absorption layer is made by ultraviolet absorber UVP-327, and described ultraviolet absorber UVP-327 comprises salicylic acid and derivative, BTA and derivative thereof, sulfonic group.
Further, described pixel layer comprises:
Through described black light, irradiate the red pixel layer of the quantum dot formation that can inspire ruddiness;
Through described black light, irradiate the green pixel layer of the quantum dot formation that can inspire green glow;
Through described black light, irradiate the blue pixel layer of the quantum dot formation that can inspire blue light.
Further, described pixel layer is formed by two-layer quantum dot.
Further, described luminescence unit is for sending the organic electroluminescence device of black light.
Further, described organic electroluminescence device comprises:
Substrate;
Be formed at successively anode, organic function layer, negative electrode on described substrate, described organic function layer comprises the luminescent layer consisting of the fluorescent material that can send black light under the driving of additional power source.
Further, between neighbor structure, by black matrix, isolate.
The present invention also provides a kind of display unit, it is characterized in that, comprises above-mentioned oled panel.
The invention has the beneficial effects as follows: arranging of light absorbing zone solves the affect problem of environment light source on pixel layer, eliminate simultaneously coloured backlight on pixel layer the problem of light leak.
Accompanying drawing explanation
Fig. 1 represents oled panel structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, structure of the present invention and principle are elaborated, illustrated embodiment, only for explaining the present invention, not limits protection scope of the present invention with this.
As shown in Figure 1, the present embodiment provides a kind of oled panel, comprises a plurality of dot structures, and described dot structure comprises:
Luminescence unit 1, the radiative wavelength of described luminescence unit 1 is the first wavelength;
The pixel layer being formed by quantum dot, the light wavelength that excites of described quantum dot is described the first wavelength, the radiative wavelength of described quantum dot is second wave length;
The exiting surface of described pixel layer is coated with light absorbing zone 3, described light absorbing zone 3 for absorbing wavelength in the extraneous light of described second wave length.
In the present embodiment, adopt quantum dot to form pixel layer, quantum dot light photoluminescence is emission spectrum narrow (range of wavelengths of its emission spectrum is several nanometers) due to its exciting light spectrum width, thereby adopt quantum dot as the pixel material of pixel layer, can access the high red, green, blue three primary colors of monochromaticjty; And light absorbing zone 3 arrange can absorbing wavelength in the extraneous light of described second wave length, can prevent that the light that surround lighting sees through pixel layer to the luminous impact of pixel layer and the utilizing emitted light that absorbs described luminescence unit 1 from preventing from causing light leak.
In the present embodiment, described pixel layer comprises:
Through described black light, irradiate the red pixel layer 23 of the quantum dot formation that can inspire ruddiness;
Through described black light, irradiate the green pixel layer 22 of the quantum dot formation that can inspire green glow;
Through described black light, irradiate the blue pixel layer 21 of the quantum dot formation that can inspire blue light.
In the present embodiment, between neighbor structure, by black matrix 4, isolate.
Because quantum dot is nanometer ball shape structure and self is luminous, thereby do not need compensation film for angular field of view, there is splendid visual angle.
The quantum dot that forms each pixel layer in the present embodiment can comprise 1 layer or multilayer.
The present embodiment is preferred, quantum dot be distributed as bilayer, as shown in fig. 1, avoid due to quantum dot distribute too intensive, to affect the light efficiency of response pixel layer; Or avoid the too sparse respective pixel layer light leak that cause of quantum dot serious, cause the light efficiency of pixel layer to reduce.
In order better to improve the light efficiency of pixel layer, adjacent two layers quantum dot can be crisscross arranged.
In the present embodiment, radiative first wavelength of described luminescence unit 1 will meet and can put luminous requirement by excitation quantum, and meet, can excitation quantum put luminous light and comprise purple light, blue light etc., if but the utilizing emitted light of described luminescence unit 1 is blue light, because pixel layer comprises blue pixel layer 21, blue light can not be absorbed by light absorbing zone 3 in order to avoid affect the light efficiency of blue pixel layer 21, the blue light seeing through from blue pixel layer 21 cannot be absorbed by light absorbing zone 3, can cause light leak, so preferred, in the present embodiment, the utilizing emitted light of described luminescence unit 1 is black light, described light absorbing zone 3 is for for absorbing the UV absorption layer of the ultraviolet light of the black light that sees through from described pixel layer and surround lighting.
UV absorption layer can absorb described luminescence unit 1 black light that send and that see through from described pixel layer for improving the colorimetric purity of pixel; Meanwhile, the ultraviolet light component of UV absorption layer in can absorbing environmental light, and then prevent that surround lighting is for the impact of quantum dot light emitting on pixel layer.
In the present embodiment, described UV absorption layer is made by ultraviolet absorber UVP-327, and described ultraviolet absorber UVP-327 comprises salicylic acid and derivative, BTA and derivative thereof, sulfonic group.
The character such as ultra-violet absorber UVP-327 can absorb the ultraviolet ray of 270～380 nanometers, and it is good that it has chemical stability, and heat-resisting and good mechanical property and resin and olefines material compatibility are good, is easy to processing, and consumption is few, cheap.The effective absorbing wavelength scope of salicylic acid and derivative thereof 290nm-320nm, the effective absorbing wavelength scope of BTA and derivative thereof 300-400, by adding sulfonic group to change the blue shift of its absorbing wavelength scope.Thereby can be by the light leak problem that solves the 1 time color film in ultra-violet light-emitting unit.
In the present embodiment, described luminescence unit 1 is for sending the organic electroluminescence device of black light.
Further, described organic electroluminescence device comprises:
Substrate;
Be formed at successively anode, organic function layer, negative electrode on described substrate, described organic function layer comprises the luminescent layer consisting of the fluorescent material that can send black light under the driving of additional power source.
In the present embodiment, described luminescent layer is the combination layer that sends the fluorescent material of blue light and send the phosphor material of ruddiness, under the driving of additional power source, sends black light.The described fluorescent material that sends blue light is one or more in aromatic diamines compounds, star triphenyl amine compound, carbazole polymer, metal complex, DPVBi, BCzVB, Perylene and BczVBi, described aromatic diamine compounds is N, N '-bis--(3-aminomethyl phenyl)-N, N '-diphenyl-[1,1 '-xenyl]-4,4 '-diamines; Described star triphenyl amine compound is three-[4-(5-phenyl-2-thienyl) benzene] amine, and described carbazole polymer is polyvinylcarbazole, and described metal complex is BAlq.
The described phosphor material that sends ruddiness is PtOEP or Os (fptz)
2(pph
2me)
2red light material series.
Described anode and negative electrode are respectively arranged with implanted layer, described organic function layer also comprises hole transmission layer, has in the hole blocking layer of electron transport ability, electron transfer layer, described electron transfer layer and implanted layer can be metal complex materials, and described metal complex material is that oxine aluminium, oxine gallium or two [2-(2-hydroxy phenyl-1)-pyridine] beryllium etc. have a compounds of central metal atom; The hole blocking layer with electron transport ability can be that N-vinylcarbazole etc. has electron transport ability and a class material that can blocking hole.
It should be noted that, the version of organic electroluminescence device can have multiple, the material that is formed with organic electroluminescence devices each several part structure also can have multiple, and more than the not restriction to organic electroluminescence device of the present invention, sends black light as long as can realize.
The present invention also provides a kind of display unit, it is characterized in that, comprises above-mentioned oled panel.
The above is preferred embodiment of the present invention; it is pointed out that to those skilled in the art, do not departing under the prerequisite of principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present invention.
Claims (9)
1. an oled panel, comprises a plurality of dot structures, it is characterized in that, described dot structure comprises:
Luminescence unit, the radiative wavelength of described luminescence unit is the first wavelength;
The pixel layer being formed by quantum dot, the light wavelength that excites of described quantum dot is described the first wavelength, the radiative wavelength of described quantum dot is second wave length;
The exiting surface of described pixel layer is coated with light absorbing zone, and described light absorbing zone is used for absorbing wavelength in the extraneous light of described second wave length.
2. oled panel according to claim 1, is characterized in that, the utilizing emitted light of described luminescence unit is black light, and described light absorbing zone is for for absorbing the UV absorption layer of the ultraviolet light of the black light that sees through from described pixel layer and surround lighting.
3. oled panel according to claim 2, is characterized in that, described UV absorption layer is made by ultraviolet absorber UVP-327, and described ultraviolet absorber UVP-327 comprises salicylic acid and derivative, BTA and derivative thereof, sulfonic group.
4. oled panel according to claim 2, is characterized in that, described pixel layer comprises:
Through described black light, irradiate the red pixel layer of the quantum dot formation that can inspire ruddiness;
Through described black light, irradiate the green pixel layer of the quantum dot formation that can inspire green glow;
Through described black light, irradiate the blue pixel layer of the quantum dot formation that can inspire blue light.
5. oled panel according to claim 2, is characterized in that, described pixel layer is formed by two-layer quantum dot.
6. oled panel according to claim 2, is characterized in that, described luminescence unit is for sending the organic electroluminescence device of black light.
7. oled panel according to claim 6, is characterized in that, described organic electroluminescence device comprises:
Substrate;
Be formed at successively anode, organic function layer, negative electrode on described substrate, described organic function layer comprises the luminescent layer consisting of the fluorescent material that can send black light under the driving of additional power source.
8. oled panel according to claim 1, is characterized in that, between neighbor structure, by black matrix, isolates.
9. a display unit, is characterized in that, comprises the oled panel described in claim 1-8 any one.
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| CN201410350524.3A CN104143564A (en) | 2014-07-22 | 2014-07-22 | OLED panel and display device |
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| CN201410350524.3A CN104143564A (en) | 2014-07-22 | 2014-07-22 | OLED panel and display device |
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Cited By (18)
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| CN104835783A (en) * | 2015-05-12 | 2015-08-12 | 中山大学 | Quantum dot film array preparation method |
| CN105097879A (en) * | 2015-07-22 | 2015-11-25 | 深圳市华星光电技术有限公司 | Display panel |
| CN105742320A (en) * | 2014-12-29 | 2016-07-06 | 乐金显示有限公司 | Organic Light Emitting Diode Display Having Quantum Dot |
| CN106340597A (en) * | 2016-08-31 | 2017-01-18 | 纳晶科技股份有限公司 | Light emitting device |
| CN108598278A (en) * | 2018-04-20 | 2018-09-28 | 武汉华星光电半导体显示技术有限公司 | Encapsulating structure of Organic Light Emitting Diode and preparation method thereof |
| CN108732814A (en) * | 2018-05-30 | 2018-11-02 | 武汉华星光电技术有限公司 | Liquid crystal display panel and liquid crystal display device |
| CN108878621A (en) * | 2018-06-21 | 2018-11-23 | 深圳创维－Rgb电子有限公司 | A kind of LED encapsulation structure, backlight module and display equipment |
| CN109004078A (en) * | 2018-07-27 | 2018-12-14 | 上海天马微电子有限公司 | Miniature LED display panel and preparation method thereof and display device |
| CN110071144A (en) * | 2019-04-08 | 2019-07-30 | 深圳市华星光电半导体显示技术有限公司 | OLED display and preparation method |
| CN110211491A (en) * | 2019-06-05 | 2019-09-06 | 京东方科技集团股份有限公司 | A kind of preparation method of color membrane substrates, display panel and display panel |
| US10527888B2 (en) | 2018-05-30 | 2020-01-07 | Wuhan China Star Optoeelectronics Technology Co., Ltd. | Liquid crystal display panel and liquid crystal display device |
| CN110928021A (en) * | 2019-11-05 | 2020-03-27 | 深圳市华星光电半导体显示技术有限公司 | Brightness enhancement film of quantum dot display panel and lens array |
| US10826016B2 (en) | 2018-04-20 | 2020-11-03 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light-emitting diode package, display panel and method for manufacturing the same |
| US11107864B2 (en) | 2018-11-29 | 2021-08-31 | Boe Technology Group Co., Ltd. | Organic light-emitting diode display substrate, method of preparing the same, and display device |
| CN113629211A (en) * | 2021-07-28 | 2021-11-09 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| WO2021233104A1 (en) * | 2020-05-22 | 2021-11-25 | 北京芯海视界三维科技有限公司 | Light-emitting module, display module, display screen and display |
| US11362149B2 (en) | 2018-11-29 | 2022-06-14 | Boe Technology Group Co., Ltd. | Organic light emitting diode display substrate having a band gap layer and manufacturing method thereof |
| US11963424B2 (en) | 2018-11-29 | 2024-04-16 | Boe Technology Group Co., Ltd. | Organic light-emitting diode display substrate and display device |
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| CN105742320A (en) * | 2014-12-29 | 2016-07-06 | 乐金显示有限公司 | Organic Light Emitting Diode Display Having Quantum Dot |
| CN105742320B (en) * | 2014-12-29 | 2019-01-15 | 乐金显示有限公司 | Organic light emitting diode display with quantum dot |
| CN104835783A (en) * | 2015-05-12 | 2015-08-12 | 中山大学 | Quantum dot film array preparation method |
| CN105097879A (en) * | 2015-07-22 | 2015-11-25 | 深圳市华星光电技术有限公司 | Display panel |
| US10068949B2 (en) | 2015-07-22 | 2018-09-04 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Display panel |
| CN106340597A (en) * | 2016-08-31 | 2017-01-18 | 纳晶科技股份有限公司 | Light emitting device |
| US10790463B2 (en) | 2016-08-31 | 2020-09-29 | Najing Technology Corporation Limited | Light emitting device |
| CN106340597B (en) * | 2016-08-31 | 2019-01-18 | 纳晶科技股份有限公司 | Luminescent device |
| CN108598278A (en) * | 2018-04-20 | 2018-09-28 | 武汉华星光电半导体显示技术有限公司 | Encapsulating structure of Organic Light Emitting Diode and preparation method thereof |
| US10826016B2 (en) | 2018-04-20 | 2020-11-03 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light-emitting diode package, display panel and method for manufacturing the same |
| US10527888B2 (en) | 2018-05-30 | 2020-01-07 | Wuhan China Star Optoeelectronics Technology Co., Ltd. | Liquid crystal display panel and liquid crystal display device |
| CN108732814A (en) * | 2018-05-30 | 2018-11-02 | 武汉华星光电技术有限公司 | Liquid crystal display panel and liquid crystal display device |
| CN108878621B (en) * | 2018-06-21 | 2020-03-17 | 深圳创维－Rgb电子有限公司 | LED packaging structure, backlight module and display device |
| CN108878621A (en) * | 2018-06-21 | 2018-11-23 | 深圳创维－Rgb电子有限公司 | A kind of LED encapsulation structure, backlight module and display equipment |
| CN109004078B (en) * | 2018-07-27 | 2020-08-25 | 上海天马微电子有限公司 | Miniature LED display panel, manufacturing method thereof and display device |
| CN109004078A (en) * | 2018-07-27 | 2018-12-14 | 上海天马微电子有限公司 | Miniature LED display panel and preparation method thereof and display device |
| US11362149B2 (en) | 2018-11-29 | 2022-06-14 | Boe Technology Group Co., Ltd. | Organic light emitting diode display substrate having a band gap layer and manufacturing method thereof |
| US11637150B2 (en) | 2018-11-29 | 2023-04-25 | Boe Technology Group Co., Ltd. | Organic light-emitting diode display substrate and display device |
| US11107864B2 (en) | 2018-11-29 | 2021-08-31 | Boe Technology Group Co., Ltd. | Organic light-emitting diode display substrate, method of preparing the same, and display device |
| US11963424B2 (en) | 2018-11-29 | 2024-04-16 | Boe Technology Group Co., Ltd. | Organic light-emitting diode display substrate and display device |
| US11910688B2 (en) | 2018-11-29 | 2024-02-20 | Boe Technology Group Co., Ltd. | Organic light emitting diode display substrate having band gap layer, manufacturing method thereof, and display device |
| CN110071144A (en) * | 2019-04-08 | 2019-07-30 | 深圳市华星光电半导体显示技术有限公司 | OLED display and preparation method |
| CN110211491B (en) * | 2019-06-05 | 2021-05-14 | 京东方科技集团股份有限公司 | Color film substrate, display panel and preparation method of display panel |
| CN110211491A (en) * | 2019-06-05 | 2019-09-06 | 京东方科技集团股份有限公司 | A kind of preparation method of color membrane substrates, display panel and display panel |
| WO2021088113A1 (en) * | 2019-11-05 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Brightness enhancement film for quantum dot display panel and lens array |
| CN110928021B (en) * | 2019-11-05 | 2021-06-01 | 深圳市华星光电半导体显示技术有限公司 | Brightness enhancement film of quantum dot display panel and lens array |
| CN110928021A (en) * | 2019-11-05 | 2020-03-27 | 深圳市华星光电半导体显示技术有限公司 | Brightness enhancement film of quantum dot display panel and lens array |
| TWI776517B (en) * | 2020-05-22 | 2022-09-01 | 大陸商北京芯海視界三維科技有限公司 | Light-emitting module, display module, display screen and display |
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Application publication date: 20141112 |