CN115720479A - Quantum dot layer preparation method and display panel - Google Patents
Quantum dot layer preparation method and display panel Download PDFInfo
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- CN115720479A CN115720479A CN202211480490.0A CN202211480490A CN115720479A CN 115720479 A CN115720479 A CN 115720479A CN 202211480490 A CN202211480490 A CN 202211480490A CN 115720479 A CN115720479 A CN 115720479A
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Abstract
The application discloses a quantum dot layer preparation method and a display panel, and the quantum dot layer preparation method comprises the following steps: generating a first quantum dot layer on a glass substrate, wherein the first quantum dot layer comprises a plurality of first quantum dots which are arranged on the glass substrate at intervals; depositing silicon dioxide on the first quantum dot layer and the glass substrate to form an isolation layer covering the first quantum dot layer and the glass substrate; and generating a second quantum dot layer on the isolation layer, wherein the second quantum dot layer comprises a plurality of second quantum dots which are arranged on the isolation layer at intervals, and the color of the first quantum dots is different from that of the second quantum dots. Based on the mode, the risk that the conversion efficiency of the quantum dots of the quantum dot layer is excessively attenuated in the preparation process can be reduced, so that the reliability of the preparation method of the quantum dot layer is improved.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a quantum dot layer preparation method and a display panel.
Background
In the prior art, when a quantum dot patterning operation is performed to prepare a quantum dot layer, a yellow light process is usually adopted, and ultraviolet light is adopted to perform photolithography on a quantum dot material, so that a quantum dot layer having two types of quantum dots (for example, red quantum dots and green quantum dots) is prepared.
The prior art has the defects that the quantum dot material is subjected to photoetching by adopting ultraviolet light to form a required quantum dot layer, and after a quantum dot layer of one color is constructed, in the process of forming a quantum dot layer of another color, the ultraviolet light easily affects the quantum dots in the constructed quantum dot layer, so that the conversion efficiency of the quantum dots in the constructed quantum dot layer is reduced, and therefore, the reliability of the existing quantum dot layer preparation method is poor.
Disclosure of Invention
The method mainly solves the technical problem of how to reduce the risk of overlarge attenuation of the conversion efficiency of the quantum dots of the quantum dot layer in the preparation process so as to improve the reliability of the preparation method of the quantum dot layer.
In order to solve the above technical problem, the first technical solution adopted by the present application is: a method for preparing a quantum dot layer, comprising: generating a first quantum dot layer on a glass substrate, wherein the first quantum dot layer comprises a plurality of first quantum dots which are arranged on the glass substrate at intervals; depositing silicon dioxide on the first quantum dot layer and the glass substrate to form an isolation layer covering the first quantum dot layer and the glass substrate; and generating a second quantum dot layer on the isolation layer, wherein the second quantum dot layer comprises a plurality of second quantum dots which are arranged on the isolation layer at intervals, and the color of the first quantum dot is different from that of the second quantum dot.
Wherein generating a first quantum dot layer on a glass substrate comprises: coating 1H, 2H-perfluorooctyltrichlorosilane on a glass substrate to form a first coating layer; coating a preset mixed solution on the first coating layer to form a second coating layer, wherein the preset mixed solution is a mixed solution formed by dissolving polymethyl methacrylate in a toluene solvent; coating a first photoresist on the second coating layer to form a third coating layer; carrying out photoetching treatment on the third coating layer to form a plurality of first openings arranged at intervals on the third coating layer; performing plasma etching treatment on the first openings to remove parts of the first coating layer and the second coating layer corresponding to the positions of the first openings respectively; coating a first quantum dot layer on the third coating layer and the glass substrate; and removing the first coating layer, the second coating layer and the third coating layer on the glass substrate.
Wherein generating a second quantum dot layer on the isolation layer comprises: coating 1H, 2H-perfluorooctyltrichlorosilane on the isolation layer to form a fourth coating layer; coating a preset mixed solution on the fourth coating layer to form a fifth coating layer; coating a second photoresist on the fifth coating layer to form a sixth coating layer; carrying out photoetching treatment on the sixth coating layer to form a plurality of second openings which are arranged at intervals on the sixth coating layer; performing plasma etching treatment on the second openings to remove parts, corresponding to the positions of the second openings, in the fourth coating layer and the fifth coating layer respectively; coating a second quantum dot layer on the sixth coating layer and the isolation layer; and removing the fourth coating layer, the fifth coating layer and the sixth coating layer on the isolation layer.
Wherein the color of the first photoresist is different from the color of the second photoresist.
Wherein, the color of the second photoresist is black.
Wherein, the plasma etching treatment is carried out at each first opening hole, and comprises the following steps: an oxygen plasma is used to etch at each first opening.
Wherein, removing the first coating layer, the second coating layer and the third coating layer on the glass substrate comprises: and carrying out plasma etching treatment on the first coating layer left on the glass substrate to remove the first coating layer, the second coating layer and the third coating layer left on the glass substrate.
Wherein, after the second quantum dot layer is generated on the isolation layer, the quantum dot layer preparation method further comprises: based on the transfer head, a quantum dot layer is transferred onto the display substrate, the quantum dot layer including a first quantum dot layer, an isolation layer, and a second quantum dot layer.
Wherein, the transfer head is a polydimethylsiloxane transfer head without a seal.
In order to solve the above technical problem, the second technical solution adopted by the present application is: a display panel comprises a driving chip and a quantum dot layer prepared based on the quantum dot layer preparation method.
The beneficial effect of this application lies in: different from the prior art, in the technical scheme of this application, generate the first quantum dot layer that includes a plurality of first quantum dots that interval set up on the glass substrate, deposit silicon dioxide in order to form the isolation layer that covers first quantum dot layer and glass substrate on first quantum dot layer and glass substrate, generate the second quantum dot layer that includes a plurality of second quantum dots that interval set up on the isolation layer, wherein, the colour of first quantum dot is different from the colour of second quantum dot. Based on the mode, after the first quantum dot layer containing the color quantum dots is constructed, the first quantum dot layer is covered with silicon dioxide to form the isolation layer, and then the second quantum dot layer is generated on the isolation layer.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic flow chart of an embodiment of a quantum dot layer fabrication method of the present application;
FIG. 2 is one of the schematic cross-sectional views of one embodiment of a quantum dot layer of the present application;
FIG. 3 is a second schematic cross-sectional view of an embodiment of a quantum dot layer of the present application;
FIG. 4 is a third schematic cross-sectional view of one embodiment of a quantum dot layer of the present application;
FIG. 5 is a schematic flow chart of step S11 in the method for preparing the quantum dot layer shown in FIG. 1;
FIG. 6 is a fourth schematic cross-sectional view of one embodiment of a quantum dot layer of the present application;
FIG. 7 is a fifth schematic cross-sectional view of one embodiment of a quantum dot layer of the present application;
FIG. 8 is a sixth schematic cross-sectional view of one embodiment of a quantum dot layer of the present application;
FIG. 9 is a seventh cross-sectional view of one embodiment of a quantum dot layer of the present application;
FIG. 10 is an eighth schematic cross-sectional view of one embodiment of a quantum dot layer of the present application;
FIG. 11 is a ninth schematic cross-sectional view of one embodiment of a quantum dot layer of the present application;
FIG. 12 is a cross-sectional view of one embodiment of a quantum dot layer of the present application;
FIG. 13 is an eleventh schematic cross-sectional view of one embodiment of a quantum dot layer of the present application;
fig. 14 is a schematic flow chart of step S13 in the quantum dot layer preparation method shown in fig. 1;
FIG. 15 is a schematic diagram of an embodiment of a quantum dot transfer process of the present application;
fig. 16 is a schematic structural diagram of an embodiment of a display panel according to the present application.
Reference numerals: the display device comprises a glass substrate 101, first quantum dots 102, an isolation layer 103, second quantum dots 104, a first coating layer 105, a second coating layer 106, a third coating layer 107, a first opening 1071, a quantum dot covering layer 108, a fourth coating layer 109, a fifth coating layer 110, a sixth coating layer 111, a second opening 1111, a transfer head X, a display panel 20, a driving chip 21 and a quantum dot layer 22.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be noted that the following examples are only illustrative of the present application, and do not limit the scope of the present application. Likewise, the following examples are only some examples of the present application, not all examples, and all other examples obtained by a person of ordinary skill in the art without making any creative effort fall within the protection scope of the present application.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
Throughout the description of the present application, it is intended that the terms "mounted," "disposed," "connected," and "connected" be construed broadly and encompass, for example, fixed connections, removable connections, or integral connections unless expressly stated or limited otherwise; can be mechanically connected or electrically connected; they may be directly connected or may be connected via an intermediate medium. To one of ordinary skill in the art, the foregoing may be combined in any suitable manner with the specific meaning ascribed to the present application.
The present application first proposes a method for preparing a quantum dot layer, referring to fig. 1, where fig. 1 is a schematic flow chart of an embodiment of the method for preparing a quantum dot layer, as shown in fig. 1, the method for preparing a quantum dot layer includes:
step S11: a first quantum dot layer is generated on a glass substrate.
Wherein the first quantum dot layer comprises a plurality of first quantum dots which are arranged on the glass substrate at intervals.
Referring to fig. 2, fig. 2 is a schematic cross-sectional view of an embodiment of a quantum dot layer according to the present invention, as shown in fig. 2, a plurality of first quantum dots 102 are generated on a glass substrate 101, and the plurality of first quantum dots 102 may be arranged at intervals on the glass substrate 101, so as to form a plurality of first quantum dots 102 arranged in a display manner, or a plurality of first quantum dots 102 arranged in other manners.
Step S12: silicon dioxide is deposited on the first quantum dot layer and the glass substrate to form an isolation layer covering the first quantum dot layer and the glass substrate.
After forming the plurality of first quantum dots 102 on the glass substrate 101 shown in fig. 1, referring to fig. 3, fig. 3 is a second schematic cross-sectional view of an embodiment of the quantum dot layer of the present application, and as shown in fig. 3, silicon dioxide may be deposited on the side of the glass substrate 101 where the plurality of first quantum dots 102 are disposed to form the isolation layer 103 having properties similar to the material of the glass substrate 101.
It should be noted that, the quantum dot layer manufacturing method can perform an extinction function on ultraviolet rays, and the absorption of the isolation layer on the silicon dioxide can prevent the ultraviolet rays from damaging the first quantum dots 102 in the formed first quantum dot layer and reducing the conversion efficiency of the first quantum dots 102 when the second quantum dot layer is subsequently prepared, so that the quality of the quantum dot layer manufactured by the quantum dot layer manufacturing method is improved, and the reliability of the quantum dot layer manufacturing method is improved.
Specifically, the thickness of the isolation layer may be 5 nm, or other thicknesses, which may be determined according to actual requirements, and is not limited herein.
Step S13: a second quantum dot layer is grown on the isolation layer.
Wherein, the second quantum dot layer comprises a plurality of second quantum dots 104 arranged on the isolation layer 103 at intervals, and the color of the first quantum dots 102 is different from the color of the second quantum dots 104.
Referring to fig. 4, fig. 4 is a third schematic cross-sectional view of an embodiment of a quantum dot layer of the present application, and as shown in fig. 4, a plurality of second quantum dots 104 are formed on an isolation layer 103, and the plurality of second quantum dots 104 may be disposed at intervals on a glass substrate 101, so as to form a plurality of second quantum dots 104 arranged in a display manner, or a plurality of second quantum dots 104 arranged in other manners.
Due to the existence of the isolation layer 103 formed by depositing silicon dioxide, negative effects of ultraviolet rays adopted when the second quantum dots 104 are generated on the first quantum dots 102 covered by the isolation layer 103 can be reduced or eliminated, and the risk that the conversion efficiency of the quantum dots of the quantum dot layer is excessively attenuated in preparation is reduced, so that the reliability of the preparation method of the quantum dot layer is improved.
Different from the prior art, in the technical scheme of this application, generate the first quantum dot layer that includes a plurality of first quantum dots that interval set up on the glass substrate, deposit silicon dioxide in order to form the isolation layer that covers first quantum dot layer and glass substrate on first quantum dot layer and glass substrate, generate the second quantum dot layer that includes a plurality of second quantum dots that interval set up on the isolation layer, wherein, the colour of first quantum dot is different from the colour of second quantum dot. Based on the mode, after the first quantum dot layer containing the color quantum dots is constructed, the first quantum dot layer is covered with silicon dioxide to form the isolation layer, and then the second quantum dot layer is generated on the isolation layer.
In an embodiment, referring to fig. 5, fig. 5 is a schematic flow chart of step S11 in the quantum dot layer preparation method shown in fig. 1, and as shown in fig. 5, step S11 may specifically include:
step S111: 1H, 2H-perfluorooctyltrichlorosilane is coated on a glass substrate to form a first coating layer.
Step S112: a predetermined mixture is applied to the first coating layer to form a second coating layer.
The preset mixed liquid is a mixed liquid formed by dissolving polymethyl methacrylate in a toluene solvent.
Step S113: a first photoresist is coated on the second coating layer to form a third coating layer.
Step S114: and photoetching the third coating layer to form a plurality of first openings arranged at intervals on the third coating layer.
Step S115: and performing plasma etching treatment on the first openings to remove the parts of the first coating layer and the second coating layer corresponding to the positions of the first openings respectively.
Step S116: and coating a first quantum dot layer on the third coating layer and the glass substrate.
Step S117: and removing the first coating layer, the second coating layer and the third coating layer on the glass substrate.
Specifically, referring to fig. 6, fig. 6 is a fourth schematic cross-sectional view of an embodiment of a quantum dot layer according to the present invention, as shown in fig. 6, in step S111, 1h, 2h-perfluorooctyltrichlorosilane is coated on a glass substrate 101 to form a first coating layer 105 for improving the surface energy of a contact interface, and when the 1h, 2h-perfluorooctyltrichlorosilane is coated, the water drop angle is controlled to be greater than 30 degrees, and before the 1H, 2H-perfluorooctyltrichlorosilane is coated, the side of the glass substrate 101 on which the first coating layer 105 is formed can be cleaned by ozone to prevent the first coating layer 105 from being generated and failed due to the existence of contaminants on the glass substrate 101.
In step S112, the preset mixture, which may be a mixture of polymethyl methacrylate dissolved in a toluene solvent with a mass fraction of 3%, is coated on the first coating layer 105, and after the preset mixture is coated, the second coating layer 106 is formed by drying and curing the preset mixture, which may be at 90 ℃.
In step S113, a photoresist is coated on the second coating layer 106 to form a third coating layer 107.
Referring to fig. 7, fig. 7 is a fifth cross-sectional view illustrating a quantum dot layer according to an embodiment of the present invention, as shown in fig. 7, in step S114, a third coating layer 107 formed by photoresist is subjected to a photolithography process, so as to form a plurality of first openings 1071 spaced apart from each other on the third coating layer 107, wherein a distance between adjacent first openings 1071 may be the same as a distance between adjacent pixels on a display panel on which the quantum dot layer is disposed.
Referring to fig. 8, fig. 8 is a sixth schematic cross-sectional view of an embodiment of a quantum dot layer according to the present invention, as shown in fig. 8, in step S115, a plasma etching process may be performed at each first opening 1071 until the surface of the glass substrate 101 is exposed to remove portions of the first coating layer 105 and the second coating layer 106 corresponding to the position of each first opening 1071, specifically, the plasma etching may be plasma etching using oxygen plasma, or plasma etching or plasma cleaning using other types of plasma, and is not limited herein.
Referring to fig. 9, fig. 9 is a seventh cross-sectional view of an embodiment of the quantum dot layer of the present application, as shown in fig. 9, in step S116, quantum dot materials are coated on the third coating layer 107 and the glass substrate 101, so that the quantum dot materials cover the surface of the entire third coating layer 107, and the accommodating spaces etched by the plasma etching process in each coating layer are filled, and the quantum dot materials are dried and cured to form the first quantum dot layer, wherein the temperature for drying and curing may be 90 ℃.
As shown in fig. 2, the first coating layer 105, the second coating layer 106, the third coating layer 107, and a part of the quantum dot coating layer 108 on the glass substrate 101 are peeled off by dry etching, leaving a plurality of first quantum dots 102, thereby completing the construction of the first quantum dot layer.
Based on the mode, the first quantum dot layer with stable spacing and better conversion efficiency can be constructed, and the quality of the quantum dot layer is improved.
Alternatively, referring to fig. 14, fig. 14 is a schematic flow chart of step S13 in the quantum dot layer preparation method shown in fig. 1, and as shown in fig. 14, step S13 may specifically include:
step S131: 1H, 2H-perfluorooctyltrichlorosilane is coated on the separation layer to form a fourth coating layer.
Step S132: and coating a preset mixed solution on the fourth coating layer to form a fifth coating layer.
Step S133: a second photoresist is coated on the fifth coating layer to form a sixth coating layer.
Step S134: and photoetching the sixth coating layer to form a plurality of second openings which are arranged at intervals on the sixth coating layer.
Step S135: and performing plasma etching treatment on the second openings to remove parts of the fourth coating layer and the fifth coating layer corresponding to the positions of the second openings respectively.
Step S136: and coating a second quantum dot layer on the sixth coating layer and the isolation layer.
Step S137: and removing the fourth coating layer, the fifth coating layer and the sixth coating layer on the isolation layer.
Specifically, the above steps S131 to S137 correspond to the above steps S111 to S117, and the difference is that the steps S111 to S117 are to generate a first quantum dot layer on the glass substrate 101, and the steps S131 to S137 are to generate a second quantum dot layer on the isolation layer 103, wherein the glass substrate 101 and the isolation layer 103 are made of materials close to each other, and the generated second quantum dots 104 are respectively located between two corresponding first quantum dots 102, or the generated first quantum dots 102 are respectively located between two corresponding second quantum dots 104.
Based on the above manner, when the second quantum dot layer is prepared and the photolithography process is adopted, the ultraviolet light adopted by the photolithography process is absorbed by the isolation layer 103, so that the possibility that the conversion efficiency of the first quantum dot layer is seriously attenuated due to the ultraviolet light is reduced, and the reliability of the quantum dot layer preparation method is improved.
In addition, the construction of the quantum dot layer with the interval between the quantum dots being less than 10 microns can be realized based on the process, and the display effect of the display panel is improved.
The steps S131 to S137 may specifically be as follows:
referring to fig. 10, fig. 10 is an eighth schematic cross-sectional view of an embodiment of the quantum dot layer of the present application, as shown in fig. 10, in step S131, 1h, 2h-perfluorooctyltrichlorosilane is coated on the isolation layer 103 to form a fourth coating layer 109 for improving the surface energy of the contact interface, and when the 1h, 2h-perfluorooctyltrichlorosilane is coated, the water drop angle is controlled to be greater than 30 degrees, and before the 1h, 2h-perfluorooctyltrichlorosilane is applied, the side of the separation layer 103 on which the fourth coating layer 109 is formed may be cleaned with ozone to prevent the generation of the fourth coating layer 109 from being failed due to the presence of contaminants on the separation layer 103.
In step S132, the preset mixed solution, which may be a mixed solution of polymethyl methacrylate dissolved in a toluene solvent with a mass fraction of 3%, is coated on the fourth coating layer 109, and after the preset mixed solution is coated, the fifth coating layer 110 is formed by drying and curing the preset mixed solution, and the temperature of the drying and curing may be 90 ℃.
In step S133, a photoresist is coated on the fifth coating layer 110 to form a sixth coating layer 111.
Referring to fig. 11, fig. 11 is a ninth schematic cross-sectional view illustrating a quantum dot layer according to an embodiment of the present invention, as shown in fig. 11, in step S134, a photolithography process is performed on a sixth coating layer 111 made of photoresist, so as to form a plurality of second openings 1111 spaced apart from each other on the sixth coating layer 111, wherein a distance between adjacent second openings 1111 may be the same as a distance between adjacent pixels on a display panel on which the quantum dot layer is disposed.
Referring to fig. 12, fig. 12 is a cross-sectional view showing an embodiment of the quantum dot layer of the present invention, as shown in fig. 12, in step S135, a plasma etching process may be performed at each of the second openings 1111, until the surface of the isolation layer 103 is exposed, so as to remove portions of the fourth coating layer 109 and the fifth coating layer 110 corresponding to the position of each of the second openings 1111, specifically, the plasma etching may be performed by using an oxygen plasma, or may be performed by using other types of plasma, and the plasma etching or the plasma cleaning may be performed according to actual requirements, and is not limited herein.
Referring to fig. 13, fig. 13 is an eleventh cross-sectional view illustrating an embodiment of the quantum dot layer of the present application, as shown in fig. 13, in step S136, quantum dot materials are coated on the sixth coating layer 111 and the isolation layer 103, such that the quantum dot materials cover the surface of the entire sixth coating layer 111, and the accommodating spaces etched by the plasma etching process in the coating layers are filled, and the quantum dot materials are dried and cured to form the second quantum dot layer, wherein the temperature for drying and curing may be 90 ℃.
Further, the color of the first photoresist is different from the color of the second photoresist.
Specifically, the color of the first photoresist used in constructing the third coating layer 107 is different from the color of the second photoresist used in constructing the sixth coating layer, and the darkness of the color of the second photoresist used in constructing the sixth coating layer may be greater than a preset darkness threshold.
Further, the second photoresist is black in color.
Specifically, when the color of the second photoresist is black, and when the yellow light process is used to open the sixth coating layer in step S134 to form a plurality of second openings, the ultraviolet light used will be more difficult to penetrate through the black photoresist to affect the first quantum dots 102, so as to further reduce the risk of the conversion efficiency of the quantum dots of the quantum dot layer being too attenuated during the preparation process, thereby improving the reliability of the quantum dot layer preparation method.
Optionally, step S117 may specifically include:
the first coating layer 105 remaining on the glass substrate 101 is subjected to a plasma etching process to remove the first coating layer 105, the second coating layer 106, and the third coating layer 107 remaining on the glass substrate 101.
In an embodiment, after step S13, the method for preparing a quantum dot layer may further include:
based on the transfer head X, a quantum dot layer including a first quantum dot layer, an isolation layer 103, and a second quantum dot layer is transferred onto the display substrate.
Specifically, referring to fig. 15, fig. 15 is a schematic diagram of an embodiment of a quantum dot transfer process of the present application, which may be used to adsorb a quantum dot layer by using a transfer head X and transfer the quantum dot layer onto a corresponding display substrate for constructing a display panel including the quantum dot layer prepared by the above quantum dot layer preparation method.
Optionally, transfer tip X is a seal-less polydimethylsiloxane transfer tip.
In this manner, the quantum dot layers including the first quantum dot layer, the spacer layer 103, and the second quantum dot layer can be simultaneously adsorbed and transferred to the corresponding display substrate, and when the first quantum dot layer is a red quantum dot layer and the second quantum dot layer is a green quantum dot layer, for example, the entire quantum dot layer can be transferred to the corresponding display substrate at one time, thereby improving transfer efficiency.
Fig. 16 is a schematic structural diagram of a display panel of the present application, and fig. 16 is a schematic structural diagram of the display panel of the present application, as shown in fig. 16, the display panel 20 includes a driving chip 21 and a quantum dot layer 22, and the quantum dot layer 22 is a quantum dot layer prepared based on the quantum dot layer preparation method described in any one of the embodiments above.
Different from the prior art, in the technical scheme of the application, a first quantum dot 102 layer including a plurality of first quantum dots 102 arranged on a glass substrate at intervals is generated on the glass substrate, silicon dioxide is deposited on the first quantum dot 102 layer and the glass substrate to form an isolation layer covering the first quantum dot 102 layer and the glass substrate, and a second quantum dot layer including a plurality of second quantum dots arranged on the isolation layer at intervals is generated on the isolation layer, wherein the color of the first quantum dots 102 is different from the color of the second quantum dots. Based on the above manner, after the first quantum dot 102 layer containing one color quantum dot is constructed, the first quantum dot 102 layer is covered with silicon dioxide to form the isolation layer, and then the second quantum dot layer is generated on the isolation layer, in the process, the isolation layer formed by silicon dioxide has the extinction effect on ultraviolet rays, so that the effect of preventing or reducing the first quantum dot 102 layer from being damaged by the ultraviolet rays adopted in the construction of the second quantum dot layer can be achieved, the risk of the excessive attenuation of the conversion efficiency of the quantum dots of the quantum dot layer in the preparation process is further reduced, and the reliability of the preparation method of the quantum dot layer is improved.
In the description of the present application, reference to the description of the terms "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and the scope of the preferred embodiments of the present application includes other implementations in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the present application.
The logic and/or steps represented in the flowcharts or otherwise described herein, such as an ordered listing of executable instructions that can be considered to implement logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device (such as a personal computer, server, network device, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions). For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device) having one or more wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium could even be paper or another suitable medium upon which the program is printed, as the program can be electronically captured, via for instance optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner if necessary, and then stored in a computer memory.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (10)
1. A method of preparing a quantum dot layer, comprising:
generating a first quantum dot layer on a glass substrate, wherein the first quantum dot layer comprises a plurality of first quantum dots arranged on the glass substrate at intervals;
depositing silicon dioxide on the first quantum dot layer and the glass substrate to form an isolation layer covering the first quantum dot layer and the glass substrate;
generating a second quantum dot layer on the isolation layer, wherein the second quantum dot layer comprises a plurality of second quantum dots arranged on the isolation layer at intervals, and the color of the first quantum dot is different from the color of the second quantum dot.
2. The method of producing a quantum dot layer according to claim 1, wherein the growing a first quantum dot layer on a glass substrate comprises:
coating 1H, 2H-perfluorooctyltrichlorosilane on the glass substrate to form a first coating layer;
coating a preset mixed solution on the first coating layer to form a second coating layer, wherein the preset mixed solution is a mixed solution formed by dissolving polymethyl methacrylate in a toluene solvent;
coating a first photoresist on the second coating layer to form a third coating layer;
carrying out photoetching treatment on the third coating layer to form a plurality of first openings arranged at intervals on the third coating layer;
performing plasma etching treatment on each first opening hole to remove the parts, corresponding to the positions of the first opening holes, in the first coating layer and the second coating layer respectively;
coating a first quantum dot layer on the third coating layer and the glass substrate;
removing the first, second, and third coating layers on the glass substrate.
3. The method of preparing a quantum dot layer according to claim 2, wherein the growing a second quantum dot layer on the isolation layer comprises:
coating 1H, 2H-perfluorooctyltrichlorosilane on the separation layer to form a fourth coating layer;
coating the preset mixed solution on the fourth coating layer to form a fifth coating layer;
coating a second photoresist on the fifth coating layer to form a sixth coating layer;
carrying out photoetching treatment on the sixth coating layer to form a plurality of second openings which are arranged at intervals on the sixth coating layer;
performing plasma etching treatment on each second opening hole to remove parts, corresponding to the position of each second opening hole, in the fourth coating layer and the fifth coating layer;
coating a second quantum dot layer on the sixth coating layer and the isolation layer;
removing the fourth, fifth, and sixth coating layers on the isolation layer.
4. The method of preparing a quantum dot layer according to claim 3, wherein the color of the first photoresist is different from the color of the second photoresist.
5. The method of preparing a quantum dot layer according to claim 4, wherein the color of the second photoresist is black.
6. The method of preparing a quantum dot layer according to any of claims 2 to 4, wherein the performing a plasma etching process at each of the first openings comprises:
etching is performed using an oxygen plasma at each of the first openings.
7. The method of preparing a quantum dot layer according to any of claims 2 to 4, wherein the removing the first coating layer, the second coating layer, and the third coating layer on the glass substrate comprises:
and carrying out plasma etching treatment on the first coating layer left on the glass substrate so as to remove the first coating layer, the second coating layer and the third coating layer left on the glass substrate.
8. The method of manufacturing a quantum dot layer according to any one of claims 1 to 4, wherein after the second quantum dot layer is grown on the isolation layer, the method of manufacturing a quantum dot layer further comprises:
transferring a quantum dot layer onto a display substrate based on a transfer head, the quantum dot layer including the first quantum dot layer, the isolation layer, and the second quantum dot layer.
9. The method of preparing a quantum dot layer according to claim 8, wherein the transfer head is a seal-less polydimethylsiloxane transfer head.
10. A display panel comprising a driver chip and a quantum dot layer prepared based on the quantum dot layer preparation method of any one of claims 1 to 9.
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