CN106410049A - OLED device and OLED display - Google Patents

OLED device and OLED display Download PDF

Info

Publication number
CN106410049A
CN106410049A CN201610394338.9A CN201610394338A CN106410049A CN 106410049 A CN106410049 A CN 106410049A CN 201610394338 A CN201610394338 A CN 201610394338A CN 106410049 A CN106410049 A CN 106410049A
Authority
CN
China
Prior art keywords
described
layer
thickness
5nm
material
Prior art date
Application number
CN201610394338.9A
Other languages
Chinese (zh)
Inventor
李先杰
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to CN201610394338.9A priority Critical patent/CN106410049A/en
Publication of CN106410049A publication Critical patent/CN106410049A/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5012Electroluminescent [EL] layer
    • H01L51/5016Triplet emission
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5012Electroluminescent [EL] layer
    • H01L51/5036Multi-colour light emission, e.g. colour tuning, polymer blend, stack of electroluminescent layers
    • H01L51/504Stack of electroluminescent layers
    • H01L51/5044Stack of electroluminescent layers with spacer layers between the emissive layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5203Electrodes
    • H01L51/5206Anodes, i.e. with high work-function material
    • H01L51/5215Anodes, i.e. with high work-function material composed of transparent multilayers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5262Arrangements for extracting light from the device
    • H01L51/5265Arrangements for extracting light from the device comprising a resonant cavity structure, e.g. Bragg reflector pair

Abstract

The present invention provides an OLED device and an OLED display. The OLED device can increase the luminescent intensity of the OLED device by times through connecting two or more than two luminescent units in series; and a semitransparent anode is employed to introduce the microcavity effect to narrow the luminescence spectrum, make the light color purer and further improve the luminescent intensity. The OLED display includes the OLED device, the luminescent intensity is increased by times through connecting two or more than two luminescent units in series; the semitransparent anode is employed to introduce the microcavity effect to narrow the luminescence spectrum, make the light color purer and further improve the luminescent intensity so as to help to motivate a color conversion film to emit red and green light to obtain red, green and blue three-primary color lights with high color saturation and improve the color gamut of the OLED display; and because luminescent layers corresponding to red, green and blue pixels in the OLED display are blue luminescent layers, a precision metal mask version is avoided to use so as to facilitate improving the resolution ratio of the OLED display.

Description

OLED and OLED display

Technical field

The present invention relates to display technology field, more particularly, to a kind of OLED and OLED display.

Background technology

OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) display, also referred to as Display of organic electroluminescence, is a kind of emerging panel display apparatus, due to its have preparation process is simple, Low cost, low in energy consumption, luminosity is high, operating temperature wide accommodation, volume are frivolous, fast response time, And be easily achieved colored display and large screen display, be easily achieved and match, easily with driver ic The advantages of realizing Flexible Displays, thus have broad application prospects.

OLED according to type of drive can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and active array type OLED (Active Matrix OLED, AMOLED) two big class, I.e. direct addressin and film transistor matrix address two classes.Wherein, AMOLED has the arrangement in array Pixel, belong to active display type, luminous efficacy is high, the large scale being typically used as fine definition shows Device.

Large scale displayer volume production technology uses white organic LED at present (White Organic Light-emitting Diode, WOLED) variegate optical filter (Color filter, CF), its principle is that the white light sending WOLED leaches red green blue tricolor after colored filter. Its advantage is not need precision metallic mask plate, beneficial to preparation large scale displayer.But WOLED complicated process of preparation, and have 2/3 light after colored filter and filtered, cause energy Loss, furthermore colored filter filtration primaries excitation poor, be not suitable for making wide colour gamut (>100%) display.

In addition, the luminous intensity of existing OLED is relatively low, equally it is unfavorable for that improving OLED shows The display effect of device, Fig. 1 is a kind of structural representation of existing common blue light OLED, this indigo plant Transparent anode 100 that light OLED includes setting gradually from top to bottom, hole injection layer 200, hole Transmitting layer 3 00, electronic barrier layer 400, blue light-emitting 500, electron transfer layer 600 and negative electrode 700; Described electronic barrier layer 400, blue light-emitting 500 and electron transfer layer 600 constitute a blue light emitting list Unit, because this Nan dian Yao device only has a blue light emitting unit, therefore luminous intensity is relatively low, Make the display effect of OLED display poor.

Content of the invention

It is an object of the invention to provide a kind of OLED, luminous intensity can be improved, and photochromic purer, Be conducive to improving the display effect of OLED display.

The present invention also aims to providing a kind of OLED display, comprising above-mentioned OLED, can carry High luminous intensity, is conducive to exciting color switching film to send red, green glow, obtains the red green of high color saturation Primary colors light, improves the colour gamut of OLED display, is conducive to improving the resolution of OLED display simultaneously Rate.

For achieving the above object, present invention firstly provides a kind of OLED, including setting successively from top to bottom The anode put, hole injection layer, hole transmission layer, the first luminescence unit, charge generation layer, second Light unit and negative electrode;Described anode is semitransparent electrode;

The first electronic barrier layer that described first luminescence unit includes setting gradually from top to bottom, first light Layer and the first electron transfer layer, described second luminescence unit includes the second electricity setting gradually from top to bottom Sub- barrier layer, the second luminescent layer and the second electron transfer layer;

The electronics that described charge generation layer includes setting gradually from top to bottom produces layer and hole produces layer.

Described first luminescent layer and the second luminescent layer are blue light-emitting, the material of described blue light-emitting Including 4,4 '-two (2,2)-diphenylethyllene -1,1 biphenyl;The thickness of described first luminescent layer is 5nm~40nm; The thickness of described second luminescent layer is 5nm~40nm.

Described anode includes two transparent conductive metal oxide skin(coating)s and is located at two transparent conductive metal oxide skin(coating)s Between a metal level;The thickness of described transparent conductive metal oxide skin(coating) is 5nm~50nm;Described metal The thickness of layer is 5nm~25nm;

Described negative electrode is reflecting electrode, the material of described negative electrode include lithium, lithium alloy, magnesium, magnesium alloy, Calcium, calcium alloy, strontium, strontium alloy, lanthanum, lanthanum alloy, cerium, cerium alloy, europium, europium alloy, ytterbium, ytterbium The combination of one or more of alloy, aluminum, aluminium alloy, caesium, cesium alloy, rubidium and rubidium alloy;Institute The thickness stating negative electrode is 50nm~1000nm.

The material that described electronics produces layer includes six nitrile six azepine benzophenanthrene;Described hole produces the material of layer Including N, N '-diphenyl-N, N '-(1- naphthyl) -1,1 '-biphenyl -4,4 '-diamidogen;The thickness that described electronics produces layer is 5nm~50nm;The thickness that described hole produces layer is 5nm~50nm.

The material of described hole injection layer includes six nitrile six azepine benzophenanthrene;The thickness of described hole injection layer For 5nm~500nm;

The material of described hole transmission layer includes N, N '-diphenyl-N, N '-(1- naphthyl) -1,1 '-biphenyl -4,4 '-two Amine;The thickness of described hole transmission layer is 5nm~500nm;

The material of described first electronic barrier layer and the second electronic barrier layer all includes 4,4', 4 "-three (carbazole -9- Base) triphenylamine;The thickness of described first electronic barrier layer and the second electronic barrier layer is 5nm~30nm;

Described first electron transfer layer includes two structure sheafs overlapping, the material bag of wherein one structure sheaf Include 4,7- diphenyl -1,10- phenanthrene quinoline, the material of another structure sheaf includes 4,7- diphenyl -1,10- phenanthrene quinoline with The mixture of lithium;The thickness of described first electron transfer layer is 5nm~50nm;

The material of described second electron transfer layer includes 4,7- diphenyl -1,10- phenanthrene quinoline;Described second electronics The thickness of transport layer is 5nm~50nm.

The present invention also provides a kind of OLED display, including TFT substrate, in described TFT substrate Color switching film, the flatness layer on described color switching film, the OLED on described flatness layer Device, the encapsulation cover plate above described OLED and located at described encapsulation cover plate and OLED Packaging adhesive material between device;

Anode that described OLED includes setting gradually from top to bottom, hole injection layer, hole transmission layer, First luminescence unit, charge generation layer, the second luminescence unit and negative electrode;Described anode is translucent electricity Pole;

The first electronic barrier layer that described first luminescence unit includes setting gradually from top to bottom, first light Layer and the first electron transfer layer, described second luminescence unit includes the second electricity setting gradually from top to bottom Sub- barrier layer, the second luminescent layer and the second electron transfer layer;Described first luminescent layer and the second luminescent layer It is blue light-emitting;The electronics that described charge generation layer includes setting gradually from top to bottom produces layer and sky Cave produces layer;

Described color switching film includes red pixel cell, green pixel cell and blue pixel cells, Described red pixel cell is red conversion thin film, and described green pixel cell is green conversion thin film, institute Stating blue pixel cells is colorless and transparent film or through hole;

After applied voltage, described OLED sends blue light, and this blue light passes through the sun of described OLED Pole enters color switching film, excites the red conversion thin film constituting described red pixel cell to send HONGGUANG, The green conversion thin film constituting described green pixel cell is excited to send green glow, through composition described blueness picture The colorless and transparent film of plain unit or through hole appear blue light, thus realize red green blue tricolor showing.

The material of described blue light-emitting includes 4,4 '-two (2,2)-diphenylethyllene -1,1 biphenyl;Described first The thickness of photosphere is 5nm~40nm;The thickness of described second luminescent layer is 5nm~40nm.

Described anode includes two transparent conductive metal oxide skin(coating)s and is located at two transparent conductive metal oxide skin(coating)s Between a metal level;The thickness of described transparent conductive metal oxide skin(coating) is 5nm~50nm;Described metal The thickness of layer is 5nm~25nm;

Described negative electrode is reflecting electrode, the material of described negative electrode include lithium, lithium alloy, magnesium, magnesium alloy, Calcium, calcium alloy, strontium, strontium alloy, lanthanum, lanthanum alloy, cerium, cerium alloy, europium, europium alloy, ytterbium, ytterbium The combination of one or more of alloy, aluminum, aluminium alloy, caesium, cesium alloy, rubidium and rubidium alloy;Institute The thickness stating negative electrode is 50nm~1000nm.

The material that described electronics produces layer includes six nitrile six azepine benzophenanthrene;Described hole produces the material of layer Including N, N '-diphenyl-N, N '-(1- naphthyl) -1,1 '-biphenyl -4,4 '-diamidogen;The thickness that described electronics produces layer is 5nm~50nm;The thickness that described hole produces layer is 5nm~50nm.

The material of described hole injection layer includes six nitrile six azepine benzophenanthrene;The thickness of described hole injection layer For 5nm~500nm;

The material of described hole transmission layer includes N, N '-diphenyl-N, N '-(1- naphthyl) -1,1 '-biphenyl -4,4 '-two Amine;The thickness of described hole transmission layer is 5nm~500nm;

The material of described first electronic barrier layer and the second electronic barrier layer all includes 4,4', and 4 "-three (carbazole -9- Base) triphenylamine;The thickness of described first electronic barrier layer and the second electronic barrier layer is 5nm~30nm;

Described first electron transfer layer includes two structure sheafs overlapping, the material bag of wherein one structure sheaf Include 4,7- diphenyl -1,10- phenanthrene quinoline, the material of another structure sheaf includes 4,7- diphenyl -1,10- phenanthrene quinoline with The mixture of lithium;The thickness of described first electron transfer layer is 5nm~50nm;

The material of described second electron transfer layer includes 4,7- diphenyl -1,10- phenanthrene quinoline;Described second electronics The thickness of transport layer is 5nm~50nm;

The material of described red conversion thin film includes red quantum point, and the material of described green conversion thin film includes Green quantum dot;The thickness of described red conversion thin film is 10nm~200nm;Described green conversion thin film Thickness is 10nm~200nm.

Beneficial effects of the present invention:The present invention provide a kind of OLED, by by two or more Luminescence unit be cascaded, the luminous intensity of the OLED that can be multiplied;Simultaneously by using Semitransparent anode, can introduce microcavity effect, so that luminescent spectrum is narrowed, photochromic purer and improve further Luminous intensity.A kind of OLED display that the present invention provides comprises above-mentioned OLED, by by two Or more luminescence units are cascaded, and be multiplied luminous intensity;Simultaneously by using translucent Anode, can introduce microcavity effect, so that luminescent spectrum is narrowed, photochromic purer and improve luminous strong further Degree, thus being conducive to exciting color switching film to send red, green glow, obtains the RGB three of high color saturation Primitive color light, improves the colour gamut of OLED display;Due to red, green, blue pixel corresponding in OLED display Luminescent layer be blue light-emitting layer, thus avoiding using precision metallic mask plate, be conducive to improve OLED The resolution of display.

In order to be able to be further understood that feature and the technology contents of the present invention, refer to below in connection with the present invention Detailed description and accompanying drawing, but accompanying drawing only provide with reference to and explanation use, be not used for the present invention is limited System.

Brief description

Below in conjunction with the accompanying drawings, by the specific embodiment detailed description to the present invention, the skill of the present invention will be made Art scheme and other beneficial effects are apparent.

In accompanying drawing,

Fig. 1 is a kind of structural representation of existing common blue light OLED;

Fig. 2 is the structural representation of the OLED of the present invention;

Fig. 3 is the brightness blue light OLED of the present invention and existing common blue light OLED The contrast schematic diagram of luminous intensity;

Fig. 4 is the structural representation of the OLED display of the present invention;

Fig. 5 is the spectrogram of red green blue tricolor light that sends of OLED display of the present invention.

Specific embodiment

For further illustrating the technological means and its effect that the present invention taken, below in conjunction with the present invention's Preferred embodiment and its accompanying drawing are described in detail.

Refer to Fig. 2, present invention firstly provides a kind of OLED 120, including setting gradually from top to bottom Anode 10, hole injection layer 20, hole transmission layer 30, the first luminescence unit 40, charge generation layer 50, Second luminescence unit 60 and negative electrode 70;Described anode 10 is semitransparent electrode;

Described first luminescence unit 40 includes the first electronic barrier layer 41, first setting gradually from top to bottom Luminescent layer 42 and the first electron transfer layer 43;Described second luminescence unit 60 includes setting successively from top to bottom The second electronic barrier layer 61, the second luminescent layer 62 and the second electron transfer layer 63 put;Described electric charge produces The electronics that generating layer 50 includes setting gradually from top to bottom produces layer 51 and hole produces layer 52.

Specifically, described charge generation layer 50 is used for respectively to the first luminescence unit 40 and the second luminescence unit 60 There is provided its luminous required electronics or hole so that the first luminescence unit 40 is in charge generation layer 50 and anode 10 In the presence of luminous, the second luminescence unit 60 is luminous in the presence of charge generation layer 50 and negative electrode 70.Also It is to say, the first luminescence unit 40 and the second luminescence unit 60 are connected on anode 10 and negative electrode by charge generation layer 50 Between 70, realize the structure of series type organic LED, luminous efficiency can be increased.

Specifically, described anode 10 is used for injecting holes in hole injection layer 20.

Specifically, described anode 10 includes two transparent conductive metal oxide skin(coating)s and is located at two transparent conductive metals A metal level between oxide skin(coating).The material of described transparent conductive metal oxide skin(coating) is preferably Indium sesquioxide. Stannum;The material of described metal level can be silver or aluminum.The thickness of described transparent conductive metal oxide skin(coating) is 5nm~50nm, the thickness of described metal level is 5nm~25nm.Preferably, described transparent conductive metal oxygen The thickness of compound layer is 15nm, and the thickness of described metal level is 15nm.

Specifically, described hole injection layer 20 is used for for hole being injected into hole transmission layer 30 from anode 10.

Preferably, the material of described hole injection layer 20 includes six nitrile six azepine benzophenanthrene (Hexanitrilehexaazatriphenylene, HATCN), the structural formula of described six nitrile six azepine benzophenanthrene is

Specifically, the thickness of described hole injection layer 20 is 5nm~500nm, preferably 10nm.

Specifically, described hole transmission layer 30 is used for the first electronics of hole transport to the first luminescence unit 40 In barrier layer 41.

Preferably, the material of described hole transmission layer 30 includes N, N '-diphenyl-N, N '-(1- naphthyl) -1,1 '-connection Benzene -4, and 4 '-diamidogen (N, N '-bis (naphthalen-1-yl)-N, N '-bis (phenyl) benzidine, NPB), described The structural formula of N, N '-diphenyl-N, N '-(1- naphthyl) -1,1 '-biphenyl -4,4 '-diamidogen is

Specifically, the thickness of described hole transmission layer 30 is 5nm~500nm, preferably 60nm.

Specifically, described first electronic barrier layer 41 and the second electronic barrier layer 61 are respectively used to limit electronics In the first luminescent layer 42 and the second luminescent layer 62, and by hole transport to the first luminescent layer 42 and second In photosphere 62.

Specifically, the material of described first electronic barrier layer 41 and the second electronic barrier layer 61 all includes 4,4', 4 "- Three (carbazole -9- base) triphenylamine (4,4 ', 4 "-tris (N-carbazolyl) triphenylamine, TCTA), described 4,4', 4 " structural formula of-three (carbazole -9- base) triphenylamine is

Specifically, the thickness of described first electronic barrier layer 41 is 5nm~30nm, preferably 10nm;Described The thickness of the second electronic barrier layer 61 is 5nm~30nm, preferably 10nm.

Specifically, described first luminescent layer 42 and the second luminescent layer 62 are used for making hole and electronics in luminescent layer Recombination luminescence.

Preferably, described first luminescent layer 42 and the second luminescent layer 62 are blue light-emitting, and described blue light is sent out The material of photosphere includes 4,4 '-two (2,2)-diphenylethyllene -1,1 biphenyl (4,4 '-Bis (2,2-diphenylvinyl) -1,10-biphenyl, DPVBi), described 4,4 '-two (2,2)-stilbene The structural formula of base -1,1 biphenyl is

Specifically, the thickness of described first luminescent layer 42 is 5nm~40nm, preferably 25nm;Described second The thickness of luminescent layer 62 is 5nm~40nm, preferably 25nm.

Specifically, described first electron transfer layer 43 is used for be transferred to from charge generation layer 50 injected electrons In first luminescent layer 42, described second electron transfer layer 63 is used for be transferred to the from negative electrode 70 injected electrons In two luminescent layers 62.

Specifically, the thickness of described first electron transfer layer 43 is 5nm~50nm, preferably 20nm.

Preferably, described first electron transfer layer 43 includes two structure sheafs overlapping, wherein one structure sheaf Material include 4,7- diphenyl -1,10- phenanthrene quinoline (4,7-diphenyl-1,10-phenanthroline, Bphen), The material of another structure sheaf includes 4,7- diphenyl -1, the mixture of the luxuriant and rich with fragrance quinoline (Bphen) of 10- and lithium (Li), The thickness of this two structure sheaf is both preferably 10nm.The structural formula of described 4,7- diphenyl -1,10- phenanthrene quinoline is

Specifically, the thickness of described second electron transfer layer 63 is 5nm~50nm, preferably 20nm.

Specifically, the material of described second electron transfer layer 63 includes 4,7- diphenyl -1,10- phenanthrene quinoline (Bphen).

Specifically, described electronics produces layer 51 and is used for producing electronics, and injects electrons into the first luminescence unit In 40 the first electron transfer layer 43, described hole produces layer 52 and is used for producing hole, and injects holes into In second electronic barrier layer 61 of the second luminescence unit 60.

Specifically, the material of described electronics generation layer 51 includes six nitrile six azepine benzophenanthrene (HATCN);Institute The material stating hole generation layer 52 includes N, N '-diphenyl-N, N '-(1- naphthyl) -1,1 '-biphenyl -4,4 '-diamidogen (NPB).

Specifically, the thickness that described electronics produces layer 51 is 5nm~50nm, and described hole produces the film of layer 52 Thick is 5nm~50nm;Preferably, the thickness that described electronics produces layer 51 is 10nm, and described hole produces layer 52 thickness is 10nm.

Specifically, described negative electrode 70 is used for injecting electrons in the second electron transfer layer 63.

Preferably, described negative electrode 70 is reflecting electrode.

Specifically, the material of described negative electrode 70 is usually low work function metal material, such as includes lithium (Li), lithium Alloy, magnesium (Mg), magnesium alloy, calcium (Ca), calcium alloy, strontium (Sr), strontium alloy, lanthanum (La), Lanthanum alloy, cerium (Ce), cerium alloy, europium (Eu), europium alloy, ytterbium (Yb), ytterbium alloy, aluminum (Al), The combination of one or more of aluminium alloy, caesium (Cs), cesium alloy, rubidium (Rb) and rubidium alloy.Excellent Choosing, the thickness of described negative electrode 70 is 50nm~1000nm.

Preferably, described negative electrode 70 is to be superimposed with the aluminium lamination of 100nm by lithium fluoride (LiF) layer of 1nm to constitute Laminated film.

Preferably, described negative electrode 70 adopts vacuum deposition method film forming.

By the luminescence unit of two or more is cascaded, with respect to Fig. 1, only there is single The common blue light OLED of light unit, the OLED of the present invention has higher luminous intensity, when When described first luminescent layer 42 and the second luminescent layer 62 are blue light-emitting, the OLED of the present invention is Constitute brightness blue light OLED, under same current density, by the brightness blue light OLED of the present invention Device is contrasted with the luminous intensity of the common blue light OLED shown in Fig. 1, the result obtaining such as Fig. 3 Shown, from figure 3, it can be seen that the luminous intensity of the brightness blue light OLED of the present invention is higher than existing 4 times about of the luminous intensity of common blue light OLED having.

Above-mentioned OLED, by the luminescence unit of two or more is cascaded, can be at double Increase the luminous intensity of OLED;Additionally by using semitransparent anode, microcavity effect can be introduced, make Luminescent spectrum narrows, photochromic purer and further improve luminous intensity, be conducive to improve OLED display Display effect.

Refer to Fig. 4 and Fig. 2, the present invention also provides a kind of OLED display, including TFT substrate 110, set In the color switching film 140 in described TFT substrate 110, the flatness layer on described color switching film 140 160th, the OLED 120 on described flatness layer 160, located at described OLED 120 top Encapsulation cover plate 130 and located at the packaging adhesive material between described encapsulation cover plate 130 and OLED 120 150;

As shown in Fig. 2 described OLED 120 includes anode 10, the hole note setting gradually from top to bottom Enter layer 20, hole transmission layer 30, the first luminescence unit 40, charge generation layer 50, the second luminescence unit 60, And negative electrode 70;Described anode 10 is semitransparent electrode;

Described first luminescence unit 40 includes the first electronic barrier layer 41, first setting gradually from top to bottom Photosphere 42 and the first electron transfer layer 43, described second luminescence unit 60 includes setting gradually from top to bottom Second electronic barrier layer 61, the second luminescent layer 62 and the second electron transfer layer 63;Described first luminescent layer 42 It is blue light-emitting with the second luminescent layer 62;Described charge generation layer 50 includes setting gradually from top to bottom Electronics produces layer 51 and hole produces layer 52;

Described color switching film 140 includes red pixel cell 141, green pixel cell 142 and blue picture Plain unit 143, described red pixel cell 141 is red conversion thin film, and described green pixel cell 142 is Green conversion thin film, described blue pixel cells 143 are colorless and transparent film or through hole;

After applied voltage, described OLED 120 sends blue light, and this blue light passes through described OLED 120 Anode 10 enter color switching film 140, excite the red conversion thin film constituting described red pixel cell 141 Send HONGGUANG, excite the green conversion thin film constituting described green pixel cell 142 to send green glow, through structure The colorless and transparent film of described blue pixel cells 143 or through hole is become to appear blue light, thus realizing RGB three Primary colors shows.

Specifically, described packaging adhesive material 150 is used for bonding encapsulation cover plate 130 and OLED 120, makes envelope Capping plate 130 forms sealing protection to OLED 120, intercepts water and oxygen invading to OLED 120 Erosion.

Specifically, the material of described flatness layer 160 is transparent organic material.

Specifically, the material of described red conversion thin film includes red quantum point, described green conversion thin film Material includes green quantum dot.

Specifically, described red quantum point includes the first kernel and the first shell, the material of described first kernel For cadmium selenide (CdSe), the material of described first shell is zinc sulfide (ZnS);Described green quantum dot bag Include the second kernel and second housing, the material of described second kernel is CdSe, the material of described second housing For ZnS.

Specifically, the thickness of described red conversion thin film is 10nm~200nm, preferably 30nm.

Specifically, the thickness of described green conversion thin film is 10nm~200nm, preferably 30nm.

Specifically, the thickness of described hole injection layer 20 is 5nm~500nm, preferably 10nm.

Preferably, the material of described hole injection layer 20 includes six nitrile six azepine benzophenanthrene (HATCN).

Specifically, the thickness of described hole transmission layer 30 is 5nm~500nm, preferably 60nm.

Preferably, the material of described hole transmission layer 30 includes N, N '-diphenyl-N, N '-(1- naphthyl) -1,1 '-connection Benzene -4,4 '-diamidogen (NPB).

Specifically, the thickness of described first electronic barrier layer 41 is 5nm~30nm, preferably 10nm;Described The thickness of the second electronic barrier layer 61 is 5nm~30nm, preferably 10nm.

Specifically, the material of described first electronic barrier layer 41 and the second electronic barrier layer 61 all includes 4,4', 4 "- Three (carbazole -9- base) triphenylamine (TCTA).

Specifically, the thickness of described first luminescent layer 42 is 5nm~40nm, preferably 25nm;Described second The thickness of luminescent layer 62 is 5nm~40nm, preferably 25nm.

Specifically, the material of described blue light-emitting includes 4,4 '-two (2,2)-diphenylethyllene -1,1 biphenyl (DPVBi).

Specifically, the thickness of described first electron transfer layer 43 is 5nm~50nm, preferably 20nm.

Specifically, described first electron transfer layer 43 includes two structure sheafs overlapping, wherein one structure sheaf Material include 4,7- diphenyl -1,10- phenanthrene quinoline, the material of another structure sheaf includes 4,7- diphenyl -1,10- Luxuriant and rich with fragrance quinoline (Bphen) and the mixture of lithium (Li), the thickness of this two structure sheaf is both preferably 10nm.

Specifically, the thickness of described second electron transfer layer 63 is 5nm~50nm, preferably 20nm.

Specifically, the material of described second electron transfer layer 63 includes 4,7- diphenyl -1,10- phenanthrene quinoline (Bphen).

Specifically, the thickness that described electronics produces layer 51 is 5nm~50nm, and described hole produces the film of layer 52 Thick is 5nm~50nm;Preferably, the thickness that described electronics produces layer 51 is 10nm, and described hole produces layer 52 thickness is 10nm.

Specifically, the material of described electronics generation layer 51 includes six nitrile six azepine benzophenanthrene (HATCN);Institute The material stating hole generation layer 52 includes N, N '-diphenyl-N, N '-(1- naphthyl) -1,1 '-biphenyl -4,4 '-diamidogen (NPB).

Specifically, described anode 10 includes two transparent conductive metal oxide skin(coating)s and is located at two transparent conductive metals A metal level between oxide skin(coating).The material of described transparent conductive metal oxide skin(coating) is preferably Indium sesquioxide. Stannum;The material of described metal level can be silver or aluminum.The thickness of described transparent conductive metal oxide skin(coating) is 5nm~50nm, the thickness of described metal level is 5nm~25nm.Preferably, described transparent conductive metal oxygen The thickness of compound layer is 15nm, and the thickness of described metal level is 15nm.

Preferably, described negative electrode 70 is reflecting electrode.

Specifically, the material of described negative electrode 70 is usually low work function metal material, such as include lithium, lithium alloy, Magnesium, magnesium alloy, calcium, calcium alloy, strontium, strontium alloy, lanthanum, lanthanum alloy, cerium, cerium alloy, europium, europium close One or more of gold, ytterbium, ytterbium alloy, aluminum, aluminium alloy, caesium, cesium alloy, rubidium and rubidium alloy Combination.Preferably, the thickness of described negative electrode 70 is 50nm~1000nm.

Preferably, described negative electrode 70 is to be superimposed with the aluminium lamination of 100nm by lithium fluoride (LiF) layer of 1nm to constitute Laminated film.

Preferably, described negative electrode 70 adopts vacuum deposition method film forming.

As shown in figure 5, for the spectrogram of red green blue tricolor light that sends of OLED display of the present invention, In chromaticity coordinates system, the chromaticity coordinates of this Red Green Blue light is respectively HONGGUANG (0.70,0.30), Green glow (0.15,0.76), blue light (0.12,0.08) is it can be seen that the OLED display of the present invention is sent out The Red Green Blue light going out is respectively provided with higher color saturation, and the OLED of the present invention is shown The colour gamut of device is up to 122.6%.

Above-mentioned OLED display, OLED therein is passed through the luminescence unit string of two or more It is linked togather, the luminous intensity of the OLED that can be multiplied;Simultaneously by using semitransparent anode, Microcavity effect can be introduced, so that luminescent spectrum is narrowed, photochromic purer and further improve luminous intensity;Thus Be conducive to exciting color switching film to send red and green glow, obtain the red green blue tricolor light of high color saturation, And then improve the colour gamut of OLED display.

In sum, the present invention provides a kind of OLED and OLED display.The OLED of the present invention Device, by the luminescence unit of two or more is cascaded, can be multiplied OLED Luminous intensity;Simultaneously by using semitransparent anode, microcavity effect can be introduced, so that luminescent spectrum is narrowed, Photochromic purer and further improve luminous intensity.The OLED display of the present invention comprises above-mentioned OLED device Part, by the luminescence unit of two or more is cascaded, be multiplied luminous intensity;Lead to simultaneously Cross and use semitransparent anode, microcavity effect can be introduced, so that luminescent spectrum is narrowed, photochromic purer and further Improving luminous intensity, thus being conducive to exciting color switching film to send red, green glow, obtaining high color saturation Red green blue tricolor light, improves the colour gamut of OLED display;Due in OLED display correspondence red, green, The luminescent layer of blue pixel is blue light-emitting layer, thus avoiding using precision metallic mask plate, is conducive to improving The resolution of OLED display.

The above, for the person of ordinary skill of the art, can be with technology according to the present invention side Case and technology design are made other various corresponding changes and are deformed, and all these change and deformation are all answered Belong to the protection domain of the claims in the present invention.

Claims (10)

1. a kind of OLED it is characterised in that include set gradually from top to bottom anode (10), Hole injection layer (20), hole transmission layer (30), the first luminescence unit (40), charge generation layer (50), Second luminescence unit (60) and negative electrode (70);Described anode (10) is semitransparent electrode;
The first electronic barrier layer (41) that the inclusion of described first luminescence unit (40) sets gradually from top to bottom, First luminescent layer (42) and the first electron transfer layer (43), described second luminescence unit (60) includes The second electronic barrier layer (61), the second luminescent layer (62) and the second electronics setting gradually from top to bottom Transport layer (63);The electronics that described charge generation layer (50) includes setting gradually from top to bottom produces layer (51) Produce layer (52) with hole.
2. OLED as claimed in claim 1 is it is characterised in that described first luminescent layer (42) Be blue light-emitting with the second luminescent layer (62), the material of described blue light-emitting include 4,4 '-two (2,2)- Diphenylethyllene -1,1 biphenyl;The thickness of described first luminescent layer (42) is 5nm~40nm;Described second The thickness of luminescent layer (62) is 5nm~40nm.
3. OLED as claimed in claim 1 is it is characterised in that described anode (10) includes two Transparent conductive metal oxide skin(coating) and the metal level between two transparent conductive metal oxide skin(coating)s;Institute The thickness stating transparent conductive metal oxide skin(coating) is 5nm~50nm;The thickness of described metal level is 5nm~25nm;
Described negative electrode (70) is reflecting electrode, the material of described negative electrode (70) include lithium, lithium alloy, Magnesium, magnesium alloy, calcium, calcium alloy, strontium, strontium alloy, lanthanum, lanthanum alloy, cerium, cerium alloy, europium, europium One of alloy, ytterbium, ytterbium alloy, aluminum, aluminium alloy, caesium, cesium alloy, rubidium and rubidium alloy or many The combination planted;The thickness of described negative electrode (70) is 50nm~1000nm.
4. OLED as claimed in claim 1 is it is characterised in that described electronics produces layer (51) Material include six nitrile six azepine benzophenanthrene;The material that described hole produces layer (52) includes N, N '-hexichol Base-N, N '-(1- naphthyl) -1,1 '-biphenyl -4,4 '-diamidogen;The thickness that described electronics produces layer (51) is 5nm~50nm;The thickness that described hole produces layer (52) is 5nm~50nm.
5. OLED as claimed in claim 1 is it is characterised in that described hole injection layer (20) Material include six nitrile six azepine benzophenanthrene;The thickness of described hole injection layer (20) is 5nm~500nm;
The material of described hole transmission layer (30) includes N, N '-diphenyl-N, N '-(1- naphthyl) -1,1 '-biphenyl - 4,4 '-diamidogen;The thickness of described hole transmission layer (30) is 5nm~500nm;
Described first electronic barrier layer (41) all includes 4,4' with the material of the second electronic barrier layer (61), and 4 "- Three (carbazole -9- base) triphenylamine;Described first electronic barrier layer (41) and the second electronic barrier layer (61) Thickness be 5nm~30nm;
Two structure sheafs that described first electron transfer layer (43) inclusion overlaps, wherein one structure sheaf Material includes 4,7- diphenyl -1,10- phenanthrene quinoline, and the material of another structure sheaf includes 4,7- diphenyl -1, and 10- is luxuriant and rich with fragrance Quinoline and the mixture of lithium;The thickness of described first electron transfer layer (43) is 5nm~50nm;
The material of described second electron transfer layer (63) includes 4,7- diphenyl -1,10- phenanthrene quinoline;Described The thickness of two electron transfer layers (63) is 5nm~50nm.
6. a kind of OLED display is it is characterised in that include TFT substrate (110), located at described TFT Color switching film (140) on substrate (110), flat on described color switching film (140) Layer (160), the OLED (120) on described flatness layer (160), located at described OLED Encapsulation cover plate (130) above device (120) and located at described encapsulation cover plate (130) and OLED Packaging adhesive material (150) between device (120);
Described OLED (120) includes anode (10), the hole injection layer setting gradually from top to bottom (20), hole transmission layer (30), the first luminescence unit (40), charge generation layer (50), second Light unit (60) and negative electrode (70);Described anode (10) is semitransparent electrode;
The first electronic barrier layer (41) that the inclusion of described first luminescence unit (40) sets gradually from top to bottom, First luminescent layer (42) and the first electron transfer layer (43), described second luminescence unit (60) includes The second electronic barrier layer (61), the second luminescent layer (62) and the second electronics setting gradually from top to bottom Transport layer (63);Described first luminescent layer (42) and the second luminescent layer (62) are blue light-emitting; The electronics that described charge generation layer (50) includes setting gradually from top to bottom produces layer (51) and is produced from hole Generating layer (52);
Described color switching film (140) include red pixel cell (141), green pixel cell (142), And blue pixel cells (143), described red pixel cell (141) is red conversion thin film, described green Color pixel unit (142) is green conversion thin film, and described blue pixel cells (143) are water white transparency Thin film or through hole;
After applied voltage, described OLED (120) sends blue light, and this blue light passes through described OLED The anode (10) of device (120) enters color switching film (140), excites the described red pixel list of composition The red conversion thin film of first (141) sends HONGGUANG, excites and constitutes described green pixel cell (142) Green conversion thin film sends green glow, through the colorless and transparent film constituting described blue pixel cells (143) Or through hole appears blue light, thus realize red green blue tricolor showing.
7. OLED display as claimed in claim 6 is it is characterised in that the material of described blue light-emitting Material includes 4,4 '-two (2,2)-diphenylethyllene -1,1 biphenyl;The thickness of described first luminescent layer (42) is 5nm~40nm;The thickness of described second luminescent layer (62) is 5nm~40nm.
8. OLED display as claimed in claim 6 is it is characterised in that described anode (10) includes Two transparent conductive metal oxide skin(coating)s and the metal level between two transparent conductive metal oxide skin(coating)s; The thickness of described transparent conductive metal oxide skin(coating) is 5nm~50nm;The thickness of described metal level is 5nm~25nm;
Described negative electrode (70) is reflecting electrode, the material of described negative electrode (70) include lithium, lithium alloy, Magnesium, magnesium alloy, calcium, calcium alloy, strontium, strontium alloy, lanthanum, lanthanum alloy, cerium, cerium alloy, europium, europium One of alloy, ytterbium, ytterbium alloy, aluminum, aluminium alloy, caesium, cesium alloy, rubidium and rubidium alloy or many The combination planted;The thickness of described negative electrode (70) is 50nm~1000nm.
9. OLED display as claimed in claim 6 is it is characterised in that described electronics produces layer (51) Material include six nitrile six azepine benzophenanthrene;The material that described hole produces layer (52) includes N, N '-hexichol Base-N, N '-(1- naphthyl) -1,1 '-biphenyl -4,4 '-diamidogen;The thickness that described electronics produces layer (51) is 5nm~50nm;The thickness that described hole produces layer (52) is 5nm~50nm.
10. OLED display as claimed in claim 6 is it is characterised in that described hole injection layer (20) Material include six nitrile six azepine benzophenanthrene;The thickness of described hole injection layer (20) is 5nm~500nm;
The material of described hole transmission layer (30) includes N, N '-diphenyl-N, N '-(1- naphthyl) -1,1 '-biphenyl - 4,4 '-diamidogen;The thickness of described hole transmission layer (30) is 5nm~500nm;
Described first electronic barrier layer (41) all includes 4,4' with the material of the second electronic barrier layer (61), and 4 "- Three (carbazole -9- base) triphenylamine;Described first electronic barrier layer (41) and the second electronic barrier layer (61) Thickness be 5nm~30nm;
Two structure sheafs that described first electron transfer layer (43) inclusion overlaps, wherein one structure sheaf Material includes 4,7- diphenyl -1,10- phenanthrene quinoline, and the material of another structure sheaf includes 4,7- diphenyl -1, and 10- is luxuriant and rich with fragrance Quinoline and the mixture of lithium;The thickness of described first electron transfer layer (43) is 5nm~50nm;
The material of described second electron transfer layer (63) includes 4,7- diphenyl -1,10- phenanthrene quinoline;Described The thickness of two electron transfer layers (63) is 5nm~50nm;
The material of described red conversion thin film includes red quantum point, and the material of described green conversion thin film includes Green quantum dot;The thickness of described red conversion thin film is 10nm~200nm;Described green conversion thin film Thickness is 10nm~200nm.
CN201610394338.9A 2016-06-02 2016-06-02 OLED device and OLED display CN106410049A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610394338.9A CN106410049A (en) 2016-06-02 2016-06-02 OLED device and OLED display

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610394338.9A CN106410049A (en) 2016-06-02 2016-06-02 OLED device and OLED display
PCT/CN2016/086713 WO2017206213A1 (en) 2016-06-02 2016-06-22 Oled device and oled display

Publications (1)

Publication Number Publication Date
CN106410049A true CN106410049A (en) 2017-02-15

Family

ID=58005926

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610394338.9A CN106410049A (en) 2016-06-02 2016-06-02 OLED device and OLED display

Country Status (2)

Country Link
CN (1) CN106410049A (en)
WO (1) WO2017206213A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018152934A1 (en) * 2017-02-24 2018-08-30 深圳市华星光电技术有限公司 Oled display device, preparation method therefor, and oled display
CN109859644A (en) * 2019-03-07 2019-06-07 深圳市华星光电半导体显示技术有限公司 Display panel and display module

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1464766A (en) * 2002-06-25 2003-12-31 铼宝科技股份有限公司 Composite colour organic electroluminescent display device
CN101728378A (en) * 2008-10-22 2010-06-09 胜华科技股份有限公司 Organic light emitting diode display device and manufacturing method thereof
CN102054938A (en) * 2010-11-10 2011-05-11 陕西科技大学 Sandwich anode structure of organic electroluminescent device and preparation method thereof
US20130075705A1 (en) * 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Carbazole Compound, Light-Emitting Element Material, and Organic Semiconductor Material
CN103165817A (en) * 2011-12-08 2013-06-19 乐金显示有限公司 Tandem white organic light emitting device
CN104347807A (en) * 2013-07-31 2015-02-11 乐金显示有限公司 White organic light emitting diode device
CN104681735A (en) * 2013-11-29 2015-06-03 乐金显示有限公司 Organic light emitting device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101908531A (en) * 2009-06-05 2010-12-08 清华大学;北京维信诺科技有限公司;昆山维信诺显示技术有限公司 Multilayer electroluminescent device
US9917281B2 (en) * 2012-09-07 2018-03-13 Nitto Denko Corporation Top-emitting white organic light-emitting diodes having improved efficiency and stability
CN103474451A (en) * 2013-09-12 2013-12-25 深圳市华星光电技术有限公司 Colored OLED device and manufacturing method thereof
KR20150078570A (en) * 2013-12-31 2015-07-08 엘지디스플레이 주식회사 Organic electroluminescent device and organic electroluminescent display
EP2927983A1 (en) * 2014-03-31 2015-10-07 LG Display Co., Ltd. White organic light emitting device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1464766A (en) * 2002-06-25 2003-12-31 铼宝科技股份有限公司 Composite colour organic electroluminescent display device
CN101728378A (en) * 2008-10-22 2010-06-09 胜华科技股份有限公司 Organic light emitting diode display device and manufacturing method thereof
CN102054938A (en) * 2010-11-10 2011-05-11 陕西科技大学 Sandwich anode structure of organic electroluminescent device and preparation method thereof
US20130075705A1 (en) * 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Carbazole Compound, Light-Emitting Element Material, and Organic Semiconductor Material
CN103165817A (en) * 2011-12-08 2013-06-19 乐金显示有限公司 Tandem white organic light emitting device
CN104347807A (en) * 2013-07-31 2015-02-11 乐金显示有限公司 White organic light emitting diode device
CN104681735A (en) * 2013-11-29 2015-06-03 乐金显示有限公司 Organic light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018152934A1 (en) * 2017-02-24 2018-08-30 深圳市华星光电技术有限公司 Oled display device, preparation method therefor, and oled display
US10347696B2 (en) 2017-02-24 2019-07-09 Shenzhen China Star Optoelectronics Technology Co., Ltd. OLED display device, manufacturing method thereof and OLED display
CN109859644A (en) * 2019-03-07 2019-06-07 深圳市华星光电半导体显示技术有限公司 Display panel and display module

Also Published As

Publication number Publication date
WO2017206213A1 (en) 2017-12-07

Similar Documents

Publication Publication Date Title
JP5295521B2 (en) Organic EL device and manufacturing method thereof
CN102034934B (en) White organic light emitting device
CN102024844B (en) Oganic light-emitting display device
JP3861400B2 (en) Electroluminescent device and manufacturing method thereof
JP2008147691A (en) Organic electroluminescence light emitting element, and its manufacturing method
KR101352116B1 (en) White Organic Light Emitting Device
CN102097449B (en) Display unit
KR101963089B1 (en) Power-efficient rgbw oled display
JP2005243549A (en) Display element, display device and image pickup device
KR20100062169A (en) White organic light emitting device and method for manufacturing the same
CN103165817B (en) Tandem type white organic light emitting device
TW585012B (en) Organic electroluminescence device having current injection layer between light emitting layer and cathode
TW201031255A (en) Novel OLED display architecture
US7301278B2 (en) Organic EL element and method of forming the same
KR101417789B1 (en) Organic electroluminescent element
CN1836332A (en) Circuit arrangement for AC driving of organic diodes
DE10206981A1 (en) Organic electroluminescent device emits red, green, blue light by dopants and luminescent layer when bias voltage is applied
CN101714613B (en) Organic light emitting diodde desplay device
TW200423803A (en) Organic multicolor light-emitting display device and its manufacturing method
US20060267001A1 (en) Emission layer and organic light emitting diode using the same
TWI513076B (en) Organic light emitting diode (oled) device
TWI235619B (en) Multicolor electroluminescent display
DE102013112602A1 (en) White organic light emission device
JP2000077191A (en) Display device
JP5687883B2 (en) Organic light emitting device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20170215