CN111081827B - Stripping method for semiconductor device - Google Patents
Stripping method for semiconductor device Download PDFInfo
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- CN111081827B CN111081827B CN201811221504.0A CN201811221504A CN111081827B CN 111081827 B CN111081827 B CN 111081827B CN 201811221504 A CN201811221504 A CN 201811221504A CN 111081827 B CN111081827 B CN 111081827B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 173
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 238000005530 etching Methods 0.000 claims abstract description 43
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 22
- 239000010980 sapphire Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 19
- 229910002601 GaN Inorganic materials 0.000 claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 19
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a stripping method of a semiconductor device. The method comprises the following steps: providing a connection layer on a first surface of a plurality of semiconductor devices, wherein each of the plurality of semiconductor devices has a second surface opposite to the first surface, and the semiconductor devices are fixed on the substrate through the second surface; the etching medium reaches the periphery of the second surface through gaps between adjacent semiconductor devices in the plurality of semiconductor devices to etch the second surface, so that the plurality of semiconductor devices are stripped from the substrate, the semiconductor devices can be separated from the substrate without damaging the substrate, and compared with the technology of stripping the sapphire substrate by laser, the method has the advantages of short time consumption, high efficiency, simple flow and reduced manufacturing cost of the semiconductor devices.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a stripping method of a semiconductor device.
Background
In recent years, Micro LED (Micro light emitting diode) display technology has become a research hotspot, but the biggest difficulty faced by current Micro LED display is how to realize huge transfer, that is, transfer a huge number of micron-scale LED (light emitting diode) devices on a sapphire substrate onto a display driving backplane. Therefore, the separation of the sapphire substrate is one of the key processes for manufacturing the Micro LED with the micron scale, wherein laser lift-off, chemical lift-off and mechanical grinding and polishing are all means for lifting off the sapphire substrate, the application of the laser lift-off is relatively wide, but the technology for lifting off the sapphire substrate by adopting the laser has the problems of relatively long time consumption and high cost of a laser lift-off system.
Therefore, a method capable of efficiently peeling the LED off the large-area sapphire substrate is desired.
Disclosure of Invention
In view of the above, embodiments of the present invention provide a semiconductor device peeling method capable of efficiently peeling a semiconductor device from a large-area substrate.
One aspect of the present invention provides a method of peeling a semiconductor device, including: providing a connection layer on a first surface of a plurality of semiconductor devices, wherein each of the plurality of semiconductor devices has a second surface opposite to the first surface, and the semiconductor devices are fixed on the substrate through the second surface; and enabling an etching medium to reach the periphery of the second surface through gaps among the adjacent semiconductor devices in the plurality of semiconductor devices so as to etch the second surface and enable the plurality of semiconductor devices to be stripped from the substrate.
In the present invention, the connection layer has a through hole, and the method further includes: and enabling the etching medium to enter the gaps among the plurality of semiconductor devices through the through holes.
In one embodiment of the present invention, the connection layer includes a bridging electrode layer including a plurality of connection portions corresponding to the plurality of semiconductor devices and a bridging portion between adjacent ones of the plurality of connection portions.
In one embodiment of the present invention, the semiconductor device is square, and each via is surrounded by four connecting portions and four bridge portions.
In one embodiment of the invention, the etching medium comprises an anisotropic etching medium.
In one embodiment of the invention, an anisotropic etching medium comprises: potassium hydroxide, sodium hydroxide or phosphoric acid.
In one embodiment of the present invention, further comprising: during the etching of the second surface, ultrasonic vibrations are applied to the second surface.
In one embodiment of the present invention, the plurality of semiconductor devices and the connection layer are connected through a plurality of electrodes, respectively.
In one embodiment of the present invention, the semiconductor device comprises a gallium nitride semiconductor device and the substrate comprises a sapphire substrate.
In one embodiment of the present invention, further comprising: before the semiconductor device and the substrate are stripped, the connecting layer is fixed on a supporting base plate, wherein the supporting base plate comprises a temporary supporting base plate, a passive array display screen driving back plate or an active array display screen driving back plate.
According to the technical scheme provided by the embodiment of the invention, the connecting layer is arranged on the first surfaces of the plurality of semiconductor devices, the semiconductor devices are fixed on the substrate through the second surfaces of the semiconductor devices, and the corrosion medium reaches the periphery of the second surfaces through the gaps among the adjacent semiconductor devices in the plurality of semiconductor devices so as to corrode the second surfaces and peel the plurality of semiconductor devices from the substrate, so that the semiconductor devices and the substrate can be separated without damaging the substrate, the substrate can be reused, and compared with the technology of peeling the sapphire substrate by laser, the technology has the advantages of short time consumption, high efficiency, simple flow and reduced manufacturing cost of the semiconductor devices.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a flowchart illustrating a semiconductor device lift-off method according to an exemplary embodiment of the present invention.
Fig. 2 is a plan view of a connection layer shown in accordance with an exemplary embodiment of the present invention.
Fig. 3 is a flowchart illustrating a semiconductor device lift-off method according to another exemplary embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a flowchart illustrating a semiconductor device lift-off method according to an exemplary embodiment of the present invention. As shown in fig. 1, the method includes:
110: a connection layer is provided on a first surface of a plurality of semiconductor devices, wherein each of the plurality of semiconductor devices has a second surface opposite to the first surface, and the semiconductor devices are fixed on the substrate through the second surface.
In the embodiment of the invention, at least two of the plurality of semiconductor devices are fixed and connected together through the connecting layer, and the relative position between the semiconductor devices can be fixed by arranging the connecting layer, so that the position of the semiconductor device is prevented from changing in the stripping process. The connecting layer can be hard metal, can also be a softer high polymer material, and can also be a mixture of a plurality of materials. For example, in one embodiment of the present invention, the bonding layer is a solder, and in another embodiment of the present invention, the bonding layer is a glass. The connecting layer can be arranged on the semiconductor device by an etching method or a film coating method. It should be understood that the position of the connection layer is not limited in the embodiments of the present invention, as long as the connection layer can not block the connection surface (i.e., the second surface) between the semiconductor device and the substrate. For example, in embodiments of the present invention, the connection layer is located on top of the semiconductor device, i.e., on a plane parallel to and farthest from the plane of the substrate. In another embodiment of the invention, the semiconductor device has a thickness of 5 μm and the connection layer has a thickness of 2 μm and is arranged in the middle of the semiconductor device.
The semiconductor device is fixed on the substrate through the second surface. The semiconductor material is prepared on the substrate in an epitaxial growth mode, and the semiconductor device is manufactured after etching and processing, wherein the semiconductor material which is not reserved can be corroded from the substrate in the etching process according to needs, the contact surface between the semiconductor material which is remained after etching and the substrate is the connecting surface between the semiconductor device and the substrate, in addition, gaps can be generated between each connecting surface and each semiconductor device in the corrosion process, and the connecting surfaces have different shapes and areas according to different purposes of the semiconductor device.
120: and enabling an etching medium to reach the periphery of the second surface through gaps among the adjacent semiconductor devices in the plurality of semiconductor devices so as to etch the second surface and enable the plurality of semiconductor devices to be stripped from the substrate.
In embodiments of the present invention, the etching medium may be a liquid or a gas capable of etching semiconductor materials. For example, in the embodiment of the present invention, the etching medium is an anisotropic alkaline liquid, and can selectively etch the connection surface between the semiconductor device and the substrate, that is, has selectivity for the etching direction of the semiconductor material, so as to selectively etch the portion between the device and the substrate, the amount of the etching medium can be determined according to actual needs, and the connection layer has a hole, and the etching liquid flows into a gap between the semiconductor device through the hole and further reaches the periphery of the connection surface between the semiconductor device and the substrate, so as to etch the semiconductor material at the connection surface. In another embodiment of the invention the height of the semiconductor device is 5 μm and the thickness of the connection layer is 2 μm. The etching medium is an acid gas capable of etching the semiconductor device, and the gas enters a gap between the substrate and the connecting layer through a direction parallel to the plane of the substrate and further reaches the periphery of a connecting surface between the semiconductor device and the substrate to etch the semiconductor at the connecting surface.
In the embodiment of the invention, the semiconductor material at the connecting surface is completely decomposed through long-time corrosion, and then the semiconductor device is peeled from the substrate. In another embodiment of the present invention, the semiconductor portion on the connection surface is etched by controlling the duration of the etching process, and then the semiconductor device is peeled off from the substrate by an external force, and the specific duration and etching degree of the etching process can be adjusted according to the manufacturing process of the semiconductor device.
According to the technical scheme provided by the embodiment of the invention, the connecting layer is arranged on the first surfaces of the plurality of semiconductor devices, the semiconductor devices are fixed on the substrate through the second surfaces of the semiconductor devices, and the corrosion medium reaches the periphery of the second surfaces through the gaps among the adjacent semiconductor devices in the plurality of semiconductor devices so as to corrode the second surfaces and peel the plurality of semiconductor devices from the substrate, so that the semiconductor devices and the substrate can be separated without damaging the substrate, the substrate can be reused, and compared with the technology of peeling the sapphire substrate by laser, the technology has the advantages of short time consumption, high efficiency, simple flow and reduced manufacturing cost of the semiconductor devices.
According to the above embodiment, the semiconductor device includes a gallium nitride semiconductor device, and the substrate includes a sapphire substrate.
The method provided by the embodiment of the invention can strip the gallium nitride semiconductor device manufactured on the sapphire substrate, has simple flow and reduces the manufacturing cost of the semiconductor device.
In one embodiment of the invention, the connection layer has a via, the method further comprising: and enabling the etching medium to enter the gaps among the plurality of semiconductor devices through the through holes.
In the embodiments of the present invention, the through holes are disposed at positions corresponding to the gaps between the semiconductor devices, and the shapes and areas of the through holes may be set according to different processes. In another embodiment of the present invention, a circular through hole is formed in the connection layer by laser, which is not limited by the embodiment of the present invention.
Through set up the through-hole on the articulamentum for corrode the medium can reach around the connection face between semiconductor device and the substrate through the through-hole fast, shorten the time of corroding the process, promote semiconductor device's preparation efficiency.
In one embodiment of the present invention, the connection layer includes a bridging electrode layer including a plurality of connection portions corresponding to the plurality of semiconductor devices and a bridging portion between adjacent ones of the plurality of connection portions.
In the embodiment of the invention, the bridging electrode layer has a conductive function, so that the semiconductor devices connected through the bridging electrode layer can conduct current. For example, in the embodiment of the present invention, the connection layer is made of a solder whose main component is a low melting point metal, so that the connection layer has a conductive function. In another embodiment of the present invention, the connection layer has a double-layer structure, wherein one layer is a metal thin film and the other layer is a polymer insulating material, wherein the metal thin film layer is in contact with the semiconductor device, so that current can be transmitted to the semiconductor device through the connection layer.
After the connecting layer has the conductive function, a circuit can be planned on the connecting layer in the manufacturing process of the semiconductor device, the manufacturing procedures are compressed, and the manufacturing efficiency of the semiconductor device is improved.
Preferably, in one embodiment of the present invention, the semiconductor device is square, and each via is surrounded by four connection portions and four bridge portions.
Fig. 2 is a plan view illustrating a connection layer according to an exemplary embodiment of the present invention, which is illustrated as a dark portion in fig. 2, and includes a bridge portion 210, a connection portion 230, and a through hole 220 on the connection layer.
In the embodiment of the present invention, the connection portion 230 has a square shape. The bridge portion 210 spans between two semiconductor devices, connects the two semiconductor devices together so that current can pass, and one through-hole 220 is surrounded by four bridge portions 210 and four connection portions 230. It should be understood that the width of the deck in the bridge structure may be determined according to the hardness of the material of the connecting layer, which is not limited by the embodiment of the present invention. In the embodiment of the present invention, the connection portion 230 can cover the semiconductor device so that current can flow into or out of the semiconductor device through the connection portion 230.
Through setting up bridge structure for the connecting layer can also generate the hole when connecting semiconductor device, has simplified process flow, has promoted production efficiency.
In one embodiment of the invention, the etching medium comprises an anisotropic etching medium.
In the embodiment of the invention, the anisotropic etching medium can selectively etch the positions with more defects of the semiconductor material and can also selectively etch the positions according to the crystal orientation of the semiconductor material. Since the connection surface between the semiconductor device and the substrate is an epitaxial growth surface of the semiconductor material, many defects are generated during the growth process, and the semiconductor material near the connection surface is grown at the initial stage of the epitaxial growth, many crystal defects are generated, and the connection interface is a nitrogen polar surface, so that the corrosion reaction is easily started from here. The semiconductor material far away from the connecting surface is not easy to be corroded by the anisotropic corrosion medium.
By using the anisotropic etching medium to etch, the semiconductor material near the connecting surface can be accurately etched, and the yield and the efficiency of manufacturing the semiconductor device are improved.
According to the above embodiment, preferably, the anisotropic etching medium includes: potassium hydroxide, sodium hydroxide or phosphoric acid.
Potassium hydroxide, sodium hydroxide or phosphoric acid are common chemical reagents, and the anisotropic corrosion medium can reduce the production cost and the production difficulty while achieving the effect of excellent selective corrosion.
In one embodiment of the present invention, further comprising: during the etching of the second surface, ultrasonic vibrations are applied to the second surface.
In the embodiment of the invention, the ultrasonic wave is applied on the substrate, so that the vibration is generated between the semiconductor device and the substrate, and the semiconductor device is assisted to be separated from the substrate. In another embodiment of the present invention, the ultrasonic wave is applied to the connection layer and conducted to the semiconductor device through the connection layer, so that vibration is generated between the semiconductor device and the substrate to assist the semiconductor device to be detached from the substrate.
In the embodiment of the invention, ultrasonic waves are applied after the etching process is completely finished. Preferably, in another embodiment of the present invention, during the etching process, ultrasonic waves are applied simultaneously, so that efficient and rapid separation can be achieved, and a better separation effect can be achieved.
Through applying the ultrasonic wave for the substrate vibrates with semiconductor device time production, and then supplementary semiconductor device is faster with the substrate separation, has promoted production efficiency.
In one embodiment of the present invention, the plurality of semiconductor devices and the connection layer are connected through a plurality of electrodes, respectively.
In an embodiment of the invention, the electrode is an input or output terminal for current in the semiconductor device. Generally, an electrode is an important component of a semiconductor device. The electrode may be disposed between the semiconductor device and the connection layer by photolithography, for example, in an embodiment of the present invention, an electrode layer is first prepared on the semiconductor layer, the electrode layer is then processed into a predetermined shape by photolithography, and finally the connection layer is welded on the electrode layer. The electrode may also be disposed between the semiconductor device and the connection layer by soldering, which is not limited in this embodiment of the present invention.
By arranging the electrode between the semiconductor device and the connecting layer, the production processes of the semiconductor device are reduced, and the production efficiency is improved.
In one embodiment of the present invention, further comprising: before the semiconductor device and the substrate are stripped, the connecting layer is fixed on a supporting base plate, wherein the supporting base plate comprises a temporary supporting base plate, a passive array display screen driving back plate or an active array display screen driving back plate.
In an embodiment of the present invention, the support substrate is a substrate for transferring or fixing the connection layer. The supporting substrate may be a temporary supporting substrate used only for transferring the semiconductor device, for example, in the embodiment of the present invention, the supporting substrate is a metal plate, the connection layer is made of a solder, the supporting substrate and the connection layer are bonded after the semiconductor device is separated from the substrate, and the semiconductor device is transferred to the next process through the supporting substrate to be processed. The supporting substrate may also be a passive array display screen driving backplane or an active array display screen driving backplane having a certain function, wherein the passive array display screen driving backplane or the active array display screen driving backplane has a circuit and an electronic device thereon, which is not limited in the embodiment of the present invention.
By fixing the connection layer on the support substrate, the semiconductor device can be transferred easily.
All the above-mentioned optional technical solutions can be combined arbitrarily to form the optional embodiments of the present invention, and are not described herein again.
Fig. 3 is a flowchart illustrating a semiconductor device lift-off method according to another exemplary embodiment of the present invention. As shown in fig. 3, the method includes:
310: an electrode layer is provided on a semiconductor device, and the electrode layer is processed into a desired shape by photolithography.
In an embodiment of the present invention, the semiconductor device includes a semiconductor device formed of gallium nitride, wherein the gallium nitride is grown from an upper rim on a sapphire substrate. For example, the semiconductor device is formed of a microcrystalline gallium nitride, an n-type gallium nitride, an indium gallium nitride/gallium nitride multiple quantum well, and a p-type gallium nitride multilayer material, respectively, from a sapphire substrate. The plurality of semiconductor devices are formed into an array by etching, the period of the array is between 2 microns and 40 microns, and the etching is performed to form an isolation groove, and the width of the isolation groove is smaller than the period of the array and is between 0.5 microns and 30 microns. Each semiconductor device is isolated, and the isolation groove is as deep as the sapphire interface. In an embodiment of the present invention, the electrode is a p-electrode, the p-electrode is in ohmic contact with the p-type gallium nitride semiconductor, and a material of the p-electrode includes one or more of ITO (conductive glass), Ni (nickel), Ag (silver), Au (gold), Pd (palladium), Pt (platinum), Ti (titanium), W (tungsten), and Cr (chromium). The electrode layer is arranged above the semiconductor device in a sputtering or evaporation mode, and then the electrode layer is processed into a shape which is matched with the semiconductor device through photoetching.
320: and soldering a connection layer on the electrode layer, wherein all the semiconductor devices are connected to the connection layer, the connection layer is made of a solder, and each semiconductor device is connected with each other through a bridge structure in the connection layer.
In the embodiment of the invention, the connecting layer crosses the isolation groove between the semiconductor devices to connect the p electrodes of all the semiconductor devices. Two adjacent p electrodes are connected with each other through a bridge structure in the connecting layer, the bridge structure stretches across the upper part of the isolation groove, 4 bridge structures surround to form a cross-shaped hole, and liquid can be injected into the isolation groove through the hole. The material of the connection layer includes at least one of Ni (nickel), Ag (silver), Au (gold), Pt (platinum), Ti (titanium), Pd (palladium), W (tungsten), Cr (chromium), Sn (tin), and In (indium).
330: and injecting anisotropic etching liquid into the gap between the semiconductor devices through the holes surrounded by the bridge-shaped structures to selectively etch the connection surface between the semiconductor devices and the substrate.
In the embodiment of the invention, anisotropic corrosive liquid is injected into the isolation groove from the hole to selectively corrode the connection surface between the gallium nitride and the sapphire substrate. Because the gallium nitride is formed by epitaxial growth on the sapphire substrate, the gallium nitride crystal near the sapphire substrate has more defects, so the gallium nitride crystal is sensitive to the anisotropic etching liquid and can be selectively etched by the anisotropic etching liquid, and meanwhile, the gallium nitride crystal far away from the sapphire substrate cannot be etched. In the embodiment of the invention, the anisotropic etching solution comprises alkaline liquid mainly comprising sodium hydroxide solution and potassium hydroxide solution.
340: and after the corrosion is finished, cleaning the corrosive liquid, and welding the connecting layer on a temporary supporting substrate, wherein the temporary supporting substrate is a metal plate.
In the embodiment of the invention, the temporary substrate is used for transferring the stripped semiconductor device. The welding of the temporary substrate can be carried out after the corrosion is finished, and the welding flux in the connecting layer is melted by heating the temporary substrate, so that the temporary substrate and the connecting layer are welded.
350: after the support substrate is welded, ultrasonic waves are applied to the substrate.
360: after the semiconductor device is completely separated from the substrate, the semiconductor device is moved to the next process by moving the support base plate.
In the embodiment of the invention, the sapphire substrate is fixed on the workbench. And a force for separating the temporary supporting substrate and the sapphire substrate from each other is applied to the temporary supporting substrate, when the temporary supporting substrate is displaced under the action of the force, the semiconductor device and the sapphire substrate can be judged to be completely separated, and at the moment, the temporary supporting substrate is moved, and the taken-down semiconductor device is moved to the next process.
According to the technical scheme provided by the embodiment of the invention, by arranging the connecting layer, at least two of the plurality of semiconductor devices are fixed on the connecting layer, and each of the plurality of semiconductor devices is fixed on the substrate through the connecting surface; and corroding the connecting surface by using a corrosive medium, wherein the corrosive medium reaches the periphery of the connecting surface through gaps among the plurality of semiconductor devices, so that the semiconductor devices can be separated from the substrate without damaging the substrate, the process is simple, and the manufacturing cost of the semiconductor devices is reduced.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (7)
1. A method of stripping a semiconductor device, comprising:
providing a connection layer on a first surface of a plurality of semiconductor devices, wherein each of the plurality of semiconductor devices has a second surface opposite to the first surface, the semiconductor device is fixed on a substrate through the second surface, the connection layer has a via hole, the connection layer includes a bridge electrode layer including a plurality of connection portions corresponding to the plurality of semiconductor devices and bridge portions between adjacent ones of the plurality of connection portions, and the via hole is surrounded by four connection portions and four bridge portions;
making an etching medium enter the gaps among the plurality of semiconductor devices through the through holes and further reach the periphery of the second surface so as to etch the second surface and peel the plurality of semiconductor devices from the substrate,
wherein the etching medium comprises an anisotropic etching medium which does not etch the semiconductor material of the semiconductor device remote from the second surface.
2. The method of claim 1, wherein the projection of the semiconductor device on the connection layer is square.
3. The method of claim 1, wherein the anisotropically etching medium comprises: potassium hydroxide, sodium hydroxide or phosphoric acid.
4. The method of claim 1, further comprising:
applying ultrasonic vibration to the second surface during the etching of the second surface.
5. The method according to claim 1, wherein the plurality of semiconductor devices and the connection layer are connected through a plurality of electrodes, respectively.
6. The method of any of claims 1 to 5, wherein the semiconductor device comprises a gallium nitride semiconductor device and the substrate comprises a sapphire substrate.
7. The method according to any one of claims 1 to 5, further comprising:
before the semiconductor device and the substrate are stripped, the connecting layer is fixed on a supporting base plate, wherein the supporting base plate comprises a temporary supporting base plate, a passive array display screen driving back plate or an active array display screen driving back plate.
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| CN201811221504.0A CN111081827B (en) | 2018-10-19 | 2018-10-19 | Stripping method for semiconductor device |
| PCT/CN2019/102022 WO2020078103A1 (en) | 2018-10-19 | 2019-08-22 | Semiconductor device lift-off method |
| KR1020217014888A KR102517207B1 (en) | 2018-10-19 | 2019-08-22 | Semiconductor “element” peeling method |
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| CN201811221504.0A CN111081827B (en) | 2018-10-19 | 2018-10-19 | Stripping method for semiconductor device |
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| CN108417523A (en) * | 2018-04-16 | 2018-08-17 | 歌尔股份有限公司 | The stripping means of LED substrate |
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| US6913985B2 (en) * | 2003-06-20 | 2005-07-05 | Oki Data Corporation | Method of manufacturing a semiconductor device |
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| JP5171016B2 (en) * | 2006-10-27 | 2013-03-27 | キヤノン株式会社 | Semiconductor member, manufacturing method of semiconductor article, and LED array using the manufacturing method |
| KR101289602B1 (en) * | 2011-04-21 | 2013-07-24 | 영남대학교 산학협력단 | Light emitting diode |
| KR101797970B1 (en) * | 2011-05-23 | 2017-11-15 | 엘지이노텍 주식회사 | Support element for semiconductor |
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| CN1378237A (en) * | 2001-03-27 | 2002-11-06 | 日本电气株式会社 | Semiconductor substrate made from III family nitride |
| CN107369746A (en) * | 2017-08-30 | 2017-11-21 | 华南理工大学 | A kind of micro-dimension resonator LED chip at chemical attack peeling liner bottom and preparation method thereof |
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| CN108417523A (en) * | 2018-04-16 | 2018-08-17 | 歌尔股份有限公司 | The stripping means of LED substrate |
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| WO2020078103A1 (en) | 2020-04-23 |
| CN111081827A (en) | 2020-04-28 |
| KR20210089672A (en) | 2021-07-16 |
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