KR101797970B1 - Support element for semiconductor - Google Patents

Abstract

The semiconductor support member according to the embodiment includes a body including at least one support region, a pattern portion formed on at least a part of the outer periphery of the support region, a connection portion formed between the pattern portion at the outer periphery of the support region, And the like.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

An embodiment relates to a semiconductor support member.

LED (Light Emitting Diode) is a device that converts electrical signals into infrared, visible light or light using the characteristics of compound semiconductors. It is used in household appliances, remote controls, electric sign boards, displays, The use area of LED is becoming wider.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of LEDs is widening, ensuring convenience and reliability in manufacturing process of LEDs becomes an important problem in all of electronic and electric devices using LED.

The embodiment is to provide a semiconductor support member including a pattern portion to ensure convenience and reliability in a semiconductor device fabrication process.

The semiconductor support member according to the embodiment includes a body including at least one support region, a pattern portion formed on at least a part of the outer periphery of the support region, a connection portion formed between the pattern portion at the outer periphery of the support region, And the like.

The embodiment provides a semiconductor support member with improved convenience and reliability in a semiconductor device fabrication process.

1A to 1F are plan views showing a semiconductor support member according to an embodiment,
FIGS. 2A to 2D are partial cross-sectional views taken along a line D-D 'in FIG. 1A,
3 to 8 are flowcharts showing a manufacturing process of a light emitting device using a semiconductor support member according to an embodiment,
9 is a perspective view of a light emitting device package including a semiconductor support member according to an embodiment,
10 is a sectional view of a light emitting device package including a semiconductor support member according to an embodiment,
11 is a cross-sectional view of a light emitting device package including a semiconductor support member according to an embodiment,
12 is a perspective view showing a lighting apparatus including a semiconductor support member according to an embodiment,
FIG. 13 is a cross-sectional view taken along the line C-C 'of the illumination device of FIG. 12,
14 is an exploded perspective view of a liquid crystal display device including a semiconductor support member according to an embodiment, and
15 is an exploded perspective view of a liquid crystal display device including a semiconductor support member according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on", "under", or "on" Quot; on ", " under ", " upper ", and lower " lower " directly "or" indirectly "through " another layer, or structure ".

Further, the description of the positional relationship between the respective layers or structures is referred to the present specification or the drawings attached hereto.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

FIGS. 1A to 1F are plan views showing a semiconductor support member according to an embodiment, and FIGS. 2A to 2D are partial cross-sectional views taken along line D-D 'of FIG.

1A to 2D, a semiconductor support member 100 according to an embodiment includes a body 110 including at least one support region A, and a body 110 formed at least on an outer circumference of the support region A A connection part 130 formed between the pattern part 120 and the resin part 140 formed on the pattern part 120. The pattern part 120 may be formed of a resin material.

The body 110 may be formed using a material having a high thermal conductivity, or may be formed of a conductive material. The body 110 may be formed using a metal material or a conductive ceramic. The body 110 may be formed of a semiconductor (Not shown). The body 110 may be formed as a single layer, and may be formed as a double structure or a multiple structure.

That is, the body 110 may be formed of any one selected from a metal, for example, Au, Ni, W, Mo, Cu, Al, Ta, Ag, Pt, and Cr, or may include two or more alloys. And can be formed by laminating materials. In addition, the body 110 is Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, Ga 2 O 3 And the like.

Such a body 110 facilitates the release of heat generated in a semiconductor (not shown) formed on a semiconductor support member, thereby improving the thermal stability of the semiconductor (not shown).

The body 110 may include an electrode layer (not shown), and an electrode layer (not shown) may include an ohmic layer (not shown), a reflective layer (not shown), a bonding layer ) (Not shown). For example, the electrode layer (not shown) may be a structure of an ohmic layer / a reflection layer / a bonding layer, a laminate structure of an ohmic layer / a reflection layer, or a structure of a reflection layer (including an ohmic layer) / a bonding layer. For example, the electrode layer (not shown) may be formed by sequentially stacking a reflection layer and an ohmic layer on an insulating layer.

The reflective layer (not shown) may be disposed between an ohmic layer (not shown) and a bonding layer (not shown), and may be formed of a material having excellent reflection characteristics, such as Ag, Ni, Al, Rh, Pd, , Zn, Pt, Au, Hf, and combinations thereof. Alternatively, the metal material and the transparent conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, . Further, the reflective layer (not shown) can be laminated with IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni and the like.

On the other hand, when a reflection layer (not shown) is formed of a material that makes an ohmic contact with a semiconductor (not shown) formed on the semiconductor support member 100, an ohmic layer (not shown) may not be formed separately, I do not.

The ohmic layer (not shown) is in ohmic contact with the lower surface of a semiconductor (not shown) that may be formed on the semiconductor support member 100, and may be formed of a layer or a plurality of patterns. The ohmic layer (not shown) may be formed of a transparent electrode layer and a metal. For example, ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide) ), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO _x , RuO _x , RuO _x / Ni, Ag, Ni / IrO _x / Au, and Ni / IrO _x / Au / ITO. The ohmic layer (not shown) is provided for smoothly injecting carriers into the light emitting structure (not shown), and is not necessarily formed.

The electrode layer (not shown) may include a bonding layer (not shown), wherein the bonding layer may be a barrier metal or a bonding metal such as Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta.

Meanwhile, as described above, the body 110 includes an electrode layer (not shown), and the electrode layer (not shown) may include an ohmic layer (not shown), a reflective layer (not shown), and a bonding layer And a separate electrode layer (not shown) may be bonded to the semiconductor support member 100 on which the pattern unit 120 is formed, but the present invention is not limited thereto.

The pattern unit 120 may be formed on the body 110. The pattern unit 120 may be formed by patterning at least one region of the body 110 and may be formed by a method such as wet etching, dry etching, water jetting, laser cutting, sawing, And may be formed by removing at least one region of the body 110. Although the pattern unit 120 is shown as a perforation that penetrates the thickness of the body 110, the pattern unit 120 may include at least one region of the body 110, But it is not limited thereto.

 As the pattern portion 120 is formed, a region (hereinafter referred to as "support region A") formed on the semiconductor support member 100 to form a support portion of an individual semiconductor element constituting one semiconductor element .

The shape of the pattern unit 120 is not limited, and the planar shape formed by the pattern unit 120 may be formed to correspond to the outer periphery of the planar shape of the individual chip. In addition, the size and arrangement of the pattern unit 120 are not limited, and are not limited to those shown in FIGS. 1A to 1F.

Therefore, the planar shape of the support area A defined by the pattern part 120 may have a polygonal shape or a circular shape depending on the outer peripheral shape of the individual chip, And may not be limited to those shown in Figs. 1A to 1F or those listed above. Also, the support regions 120 having different shapes and sizes may be formed on one body 110, but the present invention is not limited thereto.

The width d1 of the pattern unit 120 may be formed to have a predetermined size such that the resin 140 is filled in the pattern unit 120 and the support area A can be easily separated in the light emitting device manufacturing step have. For example, d1 may be from 0.5 um to 1 mm, or from 0.5 um to 500 um, or from 1/1000 to 5 times the thickness of the body 110, but is not limited thereto. In addition, the pattern units 120 may be formed to have different widths depending on the respective regions, but are not limited thereto.

The connection portion 130 connecting the first regions may be formed to prevent the patterned support portions A from being separated from the body 110 by forming the pattern portions 120. [

The connection portion 130 may connect each support region A to support each support region A so as not to unnecessarily detach from the body 110 during the semiconductor device manufacturing process. The number, size, shape, and arrangement of the connection portions 130 are not limited. As shown in FIGS. 1A to 1E, any number of connection portions 130 may be formed in one side or corner region of each side of the support region A, Can be disposed.

Meanwhile, the width d2 of the connection part 130 may be formed to have a predetermined size so that the supporting area A can be easily separated in the light emitting device manufacturing process step. For example, d2 may be from 0.5 um to 1 mm, or from 0.5 um to 500 um, or from 1/1000 to 5 times the thickness of the body 110, but is not limited thereto.

 Each of the connection portions 130 may be disposed to form a symmetrical shape, and may be disposed asymmetrically, but is not limited thereto. In addition, as shown in FIG. 1F, at least one region of the connection portion 130 may be formed to have a small width for easy separation of the support region A, but is not limited thereto.

The cross section of the connection portion 130 may also be formed to have a continuous plane having the same thickness as the body 110 as shown in FIG. 2A, or to have a continuous plane as shown in FIG. 2B and FIG. 2C, The connection part 130 may have a groove 132 having a predetermined depth so as to have a thickness smaller than that of the body 110. However, the present invention is not limited thereto. In addition, as shown in FIG. 2D, the groove 132 may be formed in the connection part 130 and the resin material 140 may be filled in the groove 132, but the present invention is not limited thereto.

The resin material 140 may be formed in the removed region through the patterning to form the pattern unit 120.

The material forming the resin material 140 is not limited, and for example, a predetermined resin such as an epoxy resin, an acrylic resin, or a polymer such as a predetermined photosensitive resist may be used, and for example, a polydimethylsiloxane (PDMS: polydimethylsiloxane, polymethylmethacrylate (PMMA), SU8, positive PR, and negative PR.

There is no limitation on the method of forming the resin material 140 on the pattern part 120. The method of forming the pattern part 120 on the body 110 and then injecting, coating, or applying the above- May be used, but is not limited thereto.

The resin material 140 can prevent the durability of the body 110 from being lowered by removing a region of the body 110 through patterning in order to form the pattern unit 120, It is possible to prevent the occurrence of defects of the body 110, unnecessary separation of the support region A, and damage of the semiconductor element when the growth substrate (not shown) used for semiconductor growth is removed from the semiconductor element.

FIGS. 3 to 8 are views showing growth steps of the light emitting device using the semiconductor support member according to the embodiment.

First, a growth substrate 210 may be provided as shown in FIG.

The growth substrate 201 may be loaded into the growth equipment, and a compound semiconductor may be formed thereon in the form of a layer or a pattern.

The growth equipment may be an electron beam evaporator, PVD, CVD, PLD, dual-type thermal evaporator sputtering, metal organic chemical vapor deposition ), And the like, and the present invention is not limited thereto.

The growth substrate 201 may be selected from the group consisting of a sapphire substrate (Al203), GaN, SiC, ZnO, Si, GaP, InP, Ga203, a conductive substrate, and GaAs. An irregular pattern may be formed on the upper surface of the growth substrate 201. On the growth substrate 201, a layer or pattern using a semiconductor may be formed, for example, at least one of a ZnO layer (not shown), a buffer layer (not shown) and an undoped semiconductor layer (not shown). The buffer layer or the undoped semiconductor layer may be formed using a compound semiconductor of a group III-V element, the buffer layer may reduce a difference in lattice constant with respect to the substrate, and the undoped semiconductor layer may be a GaN- As shown in FIG.

Referring to FIG. 4, a light emitting structure 230 may be formed on the growth substrate 201.

The light emitting structure 230 may include at least a first semiconductor layer 232, an active layer 234 and a second semiconductor layer 236 and may be formed between the first semiconductor layer 232 and the second semiconductor layer 236 And an active layer 234 interposed therebetween.

The second semiconductor layer 236 may be positioned on the growth substrate 201. The second semiconductor layer 236 may be formed of an n-type semiconductor layer and may provide electrons to the active layer 234. The second semiconductor layer 236 may be a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? X + y? For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like, and n-type dopants such as Si, Ge and Sn can be doped.

An active layer 234 may be formed on the second semiconductor layer 236. The active layer 234 may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of Group 3-V group elements.

Well active layer 234 has a composition formula in this case formed of a quantum well structure, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) gateul a single or multiple quantum well structure having a barrier layer having a compositional formula of layers and _{in a Al b Ga 1 -a- b} N (0≤a≤1, 0 ≤b≤1, 0≤a + b≤1) . The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer 234. The conductive clad layer (not shown) may be formed of an AlGaN-based semiconductor, and may have a band gap larger than the band gap of the active layer 234.

The first semiconductor layer 232 may be formed on the active layer 234. The first semiconductor layer 232 may be implemented as a p-type semiconductor layer to inject holes into the active layer 234. The first semiconductor layer 232 may be a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like, and p-type dopants such as Mg, Zn, Ca, Sr and Ba can be doped.

An intermediate layer (not shown) may be formed between the active layer 234 and the first semiconductor layer 232 and an intermediate layer (not shown) may be formed from the second semiconductor layer 236 to the active layer 234 An electron blocking layer may be used to prevent injected electrons from flowing to the first semiconductor layer 232 without being recombined in the active layer 234. [ The intermediate layer (not shown) may have a bandgap larger than the bandgap of the barrier layer included in the active layer 234, and may be formed of a semiconductor layer containing Al, such as p-type AlGaN, but is not limited thereto. Electrons injected from the second semiconductor layer 236 are injected into the first semiconductor layer 232 without being recombined in the active layer 234 because the middle layer has a relatively larger band gap than the active layer 234 The phenomenon can be prevented. Accordingly, it is possible to increase the probability of recombination of electrons and holes in the active layer 234 and to prevent a leakage current.

The first semiconductor layer 232, the active layer 234, the intermediate layer (not shown), and the second semiconductor layer 236 may be formed by, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition CVD (Chemical Vapor Deposition), PECVD (Plasma Enhanced Chemical Vapor Deposition), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), Sputtering, Or the like, but the present invention is not limited thereto.

In addition, the doping concentrations of the conductive dopants in the first semiconductor layer 232 and the second semiconductor layer 236 may be uniform or non-uniform. That is, the plurality of semiconductor layers may be formed to have various doping concentration distributions, but the invention is not limited thereto.

The first semiconductor layer 232 may be an n-type semiconductor layer, the second semiconductor layer 236 may be a p-type semiconductor layer, and an n-type or p-type semiconductor layer may be formed on the upper or lower surface of the light- A third semiconductor layer (not shown) may be formed. Accordingly, the light emitting structure 230 may have at least one of np, pn, npn, and pnp junction structures.

Referring to FIG. 5, the semiconductor substrate 210 may be bonded to the first semiconductor layer 232 to remove the growth substrate 201.

A method of removing the growth substrate 201 may be a predetermined polishing method or a laser lift off (LLO) method, but is not limited thereto. For example, the laser lift-off method is a method of irradiating the growth substrate 201 with a laser having a wavelength in a certain region to separate the growth substrate 201. In this case, the laser is an interface between the growth substrate 201 and the light- The substrate 201 may be irradiated at the interface between two semiconductor layers (not shown) that may be formed between the light emitting structures 230.

On the other hand, when there is another semiconductor layer (for example, a buffer layer) or an air gap between the growth substrate 201 and the second semiconductor layer 236, the growth substrate 201 may be separated using a wet etching solution, But not limited thereto.

The semiconductor support member 210 may be bonded to the first semiconductor layer 232 and may include a semiconductor support member 210 and a first semiconductor layer 232 for bonding the support member 210 and the first semiconductor layer 232. [ A predetermined bonding layer (not shown) may be formed. When a bonding layer (not shown) is formed, the bonding layer (not shown) may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Not limited.

The semiconductor support member 210 includes a body 212 and a pattern portion 214 formed on the body 212. The pattern portion 214 may be filled with a resin material 216. [

Meanwhile, the semiconductor support member 210 may include an electrode layer (not shown), and an electrode layer (not shown) may include an ohmic layer, a bonding layer, and a reflective layer, but is not limited thereto. Meanwhile, the electrode layer (not shown) may be formed between the semiconductor support member 210 having the separate electrode layer (not shown) and the pattern unit 214 formed thereon and the first semiconductor layer 232, No.

The predetermined resin material 216 is formed on the pattern portion 214 formed on the semiconductor support member 210 to prevent the light emitting structure 230 from being damaged when the growth substrate 201 is separated from the light emitting structure 230. [ .

Referring to FIG. 6, at least one region of the light emitting structure may be removed to form a light emitting structure having the size and shape of individual chip units.

As shown in FIG. 6, at least one region of the semiconductor support member 210 and the bonded light emitting structure 230 may be removed to form the light emitting structure 230 of the individual chip unit, The region where the light emitting structure 230 is formed may have several regions including the first chip region M and the second chip region N. [

Meanwhile, a predetermined etching process may be performed to form the light emitting structure 230 on an individual chip basis, and the etching process may be formed to correspond to the pattern portion 214 formed on the semiconductor support member 210 . That is, the outer circumference of the light emitting structure 230 of the individual chip unit formed by etching the light emitting structure 230 may be formed corresponding to the pattern unit 214.

Then, as shown in FIG. 7, the semiconductor support member 210 can be separated into individual chip units. In the separation process, a process of separating each chip along a pattern portion 214 formed on a semiconductor support member 210 is performed. A laser cutting process or a braking process can be used for the separation process. Not limited.

Since separation of the individual chip units is performed along the pattern portion 214 formed on the semiconductor support member 210 in the separation process, separation of each individual chip can be easily performed and the possibility of damage to the semiconductor element can be reduced Therefore, convenience and reliability in the semiconductor device manufacturing process can be improved.

8, the electrode layer 250 and the light extracting structure 260 may be formed on the upper surface of the light emitting structure 230 and the passivation 270 may be formed on the side surface of the light emitting structure 230. [ have.

9 to 11 are a perspective view and a cross-sectional view illustrating a light emitting device package according to an embodiment.

9 to 11, the light emitting device package 300 includes a body 310 having a cavity 320 formed therein, first and second lead frames 340 and 350 mounted on the body 310, A light emitting device 330 electrically connected to the first and second lead frames 340 and 350 and an encapsulant (not shown) encapsulated in the cavity 320 to cover the light emitting device 330.

The body 310 is made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), liquid crystal polymer (PSG), polyamide 9T (SPS), a metal material, sapphire (Al ₂ O ₃ ), beryllium oxide (BeO), and a printed circuit board (PCB). The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 310 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 330 can be changed according to the angle of the inclined surface, thereby controlling the directivity angle of the light emitted to the outside.

Concentration of the light emitted to the outside from the light emitting device 330 increases as the directivity angle of the light decreases. Conversely, as the directivity angle of the light increases, the concentration of light emitted from the light emitting device 330 decreases.

The shape of the cavity 320 formed in the body 310 may be circular, square, polygonal, elliptical, or the like, and may have a curved shape, but the present invention is not limited thereto.

The light emitting device 330 is mounted on the first lead frame 340 and may be a light emitting device that emits light such as red, green, blue, or white, or a UV (Ultra Violet) However, the present invention is not limited thereto. In addition, one or more light emitting elements 330 may be mounted.

The light emitting device 330 may be a horizontal type or a vertical type formed on an upper surface or a flip chip formed on an upper surface or a lower surface, Applicable.

Meanwhile, the light emitting device 330 according to the embodiment can improve the convenience and reliability in the manufacturing process by using the patterned supporting member (not shown) in the manufacturing process. Therefore, the manufacturing process of the light emitting device package 300 Convenience and reliability can be improved.

The encapsulant (not shown) may be filled in the cavity 320 to cover the light emitting device 330.

The encapsulant (not shown) may be formed of silicon, epoxy, or other resin material. The encapsulant may be filled in the cavity 320 and then UV or heat cured.

In addition, the encapsulant (not shown) may include a phosphor, and the phosphor may be selected to be a wavelength of light emitted from the light emitting device 330 so that the light emitting device package 300 may emit white light.

The phosphor may be one of a blue light emitting phosphor, a blue light emitting phosphor, a green light emitting phosphor, a yellow light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, an orange light emitting phosphor, and a red light emitting phosphor depending on the wavelength of light emitted from the light emitting device 330 Can be applied.

That is, the phosphor may be excited by the light having the first light emitted from the light emitting device 330 to generate the second light. For example, when the light emitting element 330 is a blue light emitting diode and the phosphor is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light and blue light emitted from the blue light emitting diode As the excited yellow light is excited, the light emitting device package 300 can provide white light.

Similarly, when the light emitting element 330 is a green light emitting diode, a magenta phosphor or a blue and red phosphor are mixed, and when the light emitting element 330 is a red light emitting diode, a cyan phosphor or a mixture of blue and green phosphors For example.

Such a fluorescent material may be a known fluorescent material such as a YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

The first and second lead frames 340 and 350 may be formed of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium , Hafnium (Hf), ruthenium (Ru), and iron (Fe). In addition, the first and second lead frames 340 and 350 may be formed to have a single layer or a multilayer structure, but the present invention is not limited thereto.

The first and second lead frames 340 and 350 are separated from each other and electrically separated from each other. The light emitting device 330 is mounted on the first and second lead frames 340 and 350 and the first and second lead frames 340 and 350 are in direct contact with the light emitting device 330, And may be electrically connected through a conductive material such as a conductive material. In addition, the light emitting device 330 may be electrically connected to the first and second lead frames 340 and 350 through wire bonding, but is not limited thereto. Accordingly, when power is supplied to the first and second lead frames 340 and 350, power may be applied to the light emitting device 330. Meanwhile, a plurality of lead frames (not shown) may be mounted in the body 310 and each lead frame (not shown) may be electrically connected to the light emitting device 330, but is not limited thereto.

11, the light emitting device package 300 according to the embodiment may include an optical sheet 380, and the optical sheet 380 may include a base portion 382 and a prism pattern 384 .

The base portion 382 is made of a transparent material having excellent thermal stability as a support for forming the prism pattern 384 and is made of, for example, polyethylene terephthalate, polycarbonate, polypropylene, polyethylene, polystyrene, But the present invention is not limited thereto.

Further, the base portion 382 may include a phosphor (not shown). For example, the base portion 382 can be formed by curing the phosphors (not shown) evenly dispersed in the material forming the base portion 382. When the base portion 382 is formed as described above, the phosphor (not shown) can be uniformly distributed throughout the base portion 382.

On the other hand, a three-dimensional prism pattern 384 for refracting light and condensing light can be formed on the base portion 382. The material constituting the prism pattern 384 may be acrylic resin, but is not limited thereto.

The prism patterns 384 include a plurality of linear prisms arranged in parallel with one another along one direction on one side of the base portion 382 and the vertical section with respect to the axial direction of the linear prism may be triangular.

When the optical sheet 380 is attached to the light emitting device package 300 of FIG. 6C, the straightness of the light is improved and the brightness of the light of the light emitting device package 300 is increased Can be improved.

On the other hand, the prism pattern 384 may include a phosphor (not shown).

The fluorescent material (not shown) is dispersed in the prism pattern 384 to form a prism pattern 384 by mixing it with, for example, acrylic resin to form a paste or a slurry state, .

When a phosphor (not shown) is included in the prism pattern 384, the uniformity and distribution of light of the light emitting device package 300 is improved, and a phosphor (not shown) is used in addition to the light focusing effect by the prism pattern 384. [ The directivity angle of the light emitting device package 300 can be improved.

A light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on a light path of the light emitting device package 300. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Still another embodiment may be implemented as a display device, an indicating device, and a lighting system including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting system may include a lamp and a streetlight.

FIG. 12 is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment, and FIG. 13 is a cross-sectional view taken along the line C-C 'of the lighting device of FIG.

12 and 13, the lighting apparatus 400 may include a body 410, a cover 430 coupled to the body 410, and a finishing cap 450 positioned at opposite ends of the body 410 have.

The light emitting device module 440 is coupled to a lower surface of the body 410. The body 410 is electrically conductive so that heat generated from the light emitting device package 444 can be emitted to the outside through the upper surface of the body 410. [ And a metal material having an excellent heat dissipation effect.

The light emitting device package 444 may be mounted on the PCB 442 in a multi-color, multi-row manner to form an array. The light emitting device package 444 may be mounted at equal intervals or may be mounted with various distances as required. As the PCB 442, MPPCB (Metal Core PCB) or FR4 material PCB can be used.

Meanwhile, the light emitting device package 444 according to the embodiment includes a light emitting device (not shown), and the light emitting device (not shown) uses a patterned supporting member (not shown) And reliability of the light emitting device package 444 and the lighting device 400 can be improved, thereby improving convenience and reliability in the manufacturing process of the light emitting device package 444 and the lighting device 400. [

The cover 430 may be formed in a circular shape so as to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 protects the internal light emitting device module 440 from foreign substances or the like. The cover 430 may include diffusion particles to prevent glare of the light generated in the light emitting device package 444 and uniformly emit light to the outside and may include at least one of an inner surface and an outer surface of the cover 430 A prism pattern or the like may be formed on one side. Further, the phosphor may be coated on at least one of the inner surface and the outer surface of the cover 430.

Since the light generated in the light emitting device package 444 is emitted to the outside through the cover 430, the cover 430 should have a high light transmittance and sufficient heat resistance to withstand the heat generated in the light emitting device package 444 The cover 430 is preferably made of a material including polyethylene terephthalate (PET), polycarbonate (PC), or polymethyl methacrylate (PMMA) .

The finishing cap 450 is located at both ends of the body 410 and can be used for sealing the power supply unit (not shown). In addition, the fin 450 is formed on the finishing cap 450, so that the lighting device 400 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

14 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment.

14, the liquid crystal display device 500 may include a backlight unit 570 for providing light to the liquid crystal display panel 510 and the liquid crystal display panel 510 in an edge-light manner.

The liquid crystal display panel 510 can display an image using the light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal therebetween.

The color filter substrate 512 can realize the color of an image to be displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to a printed circuit board 518 on which a plurality of circuit components are mounted via a driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518. [

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 includes a light emitting device module 520 that outputs light, a light guide plate 530 that changes the light provided from the light emitting device module 520 into a surface light source and provides the light to the liquid crystal display panel 510, A plurality of films 550, 566, and 564 for uniformly distributing the luminance of light provided from the light guide plate 530 and improving vertical incidence, and a reflective sheet (not shown) for reflecting light emitted to the rear of the light guide plate 530 to the light guide plate 530 540).

The light emitting device module 520 may include a PCB substrate 522 for mounting a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 to form an array.

Meanwhile, the light emitting device package 524 according to the embodiment includes a light emitting element (not shown), and the light emitting element (not shown) uses a patterned supporting member (not shown) The reliability and the reliability of the light emitting device package 524 and the backlight unit 570 can be improved.

The backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510 and a prism film 550 for enhancing vertical incidence by condensing the diffused light And may include a protective film 564 for protecting the prism film 550. [

15 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment. However, the parts shown and described in Fig. 14 are not repeatedly described in detail.

15, the liquid crystal display 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610 in a direct-down manner.

Since the liquid crystal display panel 610 is the same as that described in Fig. 14, the detailed description is omitted.

The backlight unit 670 includes a plurality of light emitting element modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting element module 623 and the reflective sheet 624 are accommodated, And a plurality of optical films 660 disposed on the diffuser plate 640.

The light emitting device module 623 may include a PCB substrate 621 for mounting a plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 to form an array.

Meanwhile, the light emitting device package 622 according to the embodiment includes a light emitting element (not shown), and the light emitting element (not shown) uses a patterned supporting member (not shown) in the manufacturing process, And reliability of the light emitting device package 622 and the backlight unit 670 can be improved, thereby improving convenience and reliability in the manufacturing process of the light emitting device package 622 and the backlight unit 670.

The reflective sheet 624 reflects light generated from the light emitting device package 622 in a direction in which the liquid crystal display panel 610 is positioned, thereby improving light utilization efficiency.

The light emitted from the light emitting element module 623 is incident on the diffusion plate 640 and the optical film 660 is disposed on the diffusion plate 640. The optical film 660 may be configured to include a diffusion film 666, a prism film 650, and a protective film 664.

Meanwhile, the light emitting device according to the embodiment is not limited to the configuration and method of the embodiments described above, but the embodiments may be modified so that all or some of the embodiments may be selectively And may be configured in combination.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the present invention.

100: Semiconductor support member 110: Body
120: pattern part 130: connection part
140: Resin Water 142: Home

Claims (13)

A body including at least one support region;
A pattern portion formed on at least a part of the outer periphery of the support region;
A connecting portion formed between the pattern portions at the outer periphery of the supporting region; And
And a resin material formed on the pattern portion,
Wherein the body comprises an electrode layer,
Wherein the electrode layer includes at least one of an ohmic layer, a reflective layer, and a bonding layer,
Wherein the connection portion includes a groove formed in at least one region,
And the groove is filled with a resin material. The method according to claim 1,
The pattern unit may include:
Wherein at least one region of the body is removed. delete The method according to claim 1,
The resin material formed in the pattern portion may be,
≪ / RTI >
Preferably,
PDMS, PMMA, SU8, positive PR, and negative PR. delete delete The method according to any one of claims 1, 2, and 4,
The width of the pattern portion may be,
0.5 um to 1 mm,
The width of the pattern portion may be,
Wherein the thickness of the semiconductor support member is 1/1000 to 5 times the thickness of the body. delete delete The method according to any one of claims 1, 2, and 4,
The width of the connection portion
0.5 um to 1 mm,
The width of the connection portion
Wherein the thickness of the semiconductor support member is 1/1000 to 5 times the thickness of the body. delete delete The method according to any one of claims 1, 2, and 4,
The support region
A semiconductor support member having a polygonal shape.

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