TW202004851A - Method of manufacturing light emitting element - Google Patents

Abstract

Provided is a method of manufacturing a light emitting element, which includes: a dividing step of affixing, to a first tape, a semiconductor wafer in which a light emitting element is formed on a substrate, and dividing the semiconductor wafer into a plurality of light emitting elements; an extending step of stretching the first tape so as to extend the distances between the plurality of light emitting elements; a transferring step of transferring the plurality of light emitting elements from the first tape to a second tape with the distances between the light emitting elements being extended; and a mounting step of bonding the plurality of light emitting elements to a mounting substrate. This method is characterized in that in the dividing step, a tape which comprises an elastic base portion and a glue layer that is divided into islands is used as the first tape and the plurality of light emitting elements are affixed to the islands of the glue layer. With this method, light emitting elements formed on a semiconductor wafer can be accurately arranged at intended pitches using a tape expanding method.

Description

Method for manufacturing light-emitting element

The present invention relates to a method of manufacturing a light-emitting element, and more particularly to a method of manufacturing a light-emitting element that accurately bonds the light-emitting element to a mounting substrate.

When mounting a micro LED or a mini LED, there is a method of manufacturing a die by supporting a die on a mounting substrate. In addition, there is a manufacturing method in which a circuit (light-emitting element) is mounted on a mounting substrate in the case of a substrate, and then the substrate is removed. [Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2008-311671

[Problems to be solved by the invention] However, in the former case (the die is supported by tape and mounted on the mounting substrate), although it is necessary to arrange the die at arbitrary intervals, the accuracy of the die interval in the conventional tape extension method is not good. The reason is that the tape used in the past tape spreading method is made of a tape supporting the substrate and a paste used to support the crystal grains (refer to, for example, Patent Document 1), although the polypropylene supporting the tape substrate (also known as PP) or polyvinyl chloride (also known as PVC) has excellent ductility, but the paste used to support the crystal grains has poor ductility.

Since the tape extension method cannot match the mounting substrate to arrange the die at arbitrary intervals, the latter method (removing the substrate after mounting the circuit on the mounting substrate with the circuit as the substrate) will remove the inter-die components in advance The area is arbitrarily spaced, and the 1:1 reposting is installed in line with the space.

However, this method will increase the area of the wafer that cannot become a light-emitting element, resulting in increased costs. In particular, when three kinds of RGB LEDs are mounted separately to form one pixel, the area loss becomes larger. Therefore, a die mounting method with a small area loss of the wafer and high accuracy is desired.

In view of the above problems, an object of the present invention is to provide a method for manufacturing a light-emitting element, which can arrange light-emitting elements formed on a semiconductor wafer at an arbitrary interval with good accuracy by a tape extension method. [Technical means to solve problems]

In order to achieve the above object, the present invention provides a method for manufacturing a light-emitting element, comprising: a dividing step, attaching a semiconductor wafer with a light-emitting element formed on a substrate to a first tape, and dividing the semiconductor wafer into a plurality of light-emitting elements ; Expansion step, by extending the first adhesive tape, the distance between each light-emitting element of the plurality of light-emitting elements is expanded; the reposting step, the distance between each light-emitting element of the plurality of light-emitting elements has been expanded In the state, the plurality of light-emitting elements are transferred from the first tape to the second tape; and the mounting step is to join the plurality of light-emitting elements to the mounting substrate, wherein in the dividing step, the first tape is composed of The stretchable base material portion and the paste layer are formed by using an object divided into islands, and the plurality of light emitting elements are attached to the paste layer divided into islands.

In this way, the low ductility paste layer of the first tape is cut and arranged island-like on the high ductility base portion without hindering the elongation of the base portion, so the intervals of the light emitting elements are not greatly disordered, and The light emitting elements are arranged at arbitrary intervals. In this way, the light-emitting elements formed on the semiconductor wafer can be arranged at an arbitrary interval with good accuracy by the tape extension method.

At this time, the light emitting element can be flip-chip bonded to the mounting substrate.

When the light-emitting element is flip-chip bonded to the mounting substrate, the present invention can be suitably applied.

At this time, as the first tape, it is preferable to use a material made of polyvinyl chloride (PVC) or polypropylene (PP) on the base portion.

As the base material portion of the first tape, if such an excellent ductility is used, it can be a tape having sufficient ductility.

At this time, the method of dividing the paste layer of the first tape into islands is to cut the paste layer by a blade or a laser, or to form the island-shaped paste layer by a printing method or a dispensing method It is preferably on the base portion.

According to such a method, the paste layer can be divided into islands relatively easily. [Comparing the efficacy of the previous technology]

As described above, according to the method of manufacturing a light-emitting device of the present invention, the paste layer of the first tape having low ductility is cut and arranged island-like on the base portion of high ductility without hindering the base portion. Because of the extension, the intervals of the light-emitting elements are not greatly disordered, and the light-emitting elements can be arranged at arbitrary intervals. In this way, the light-emitting elements formed on the semiconductor wafer can be arranged at an arbitrary interval with good accuracy by the tape extension method.

The following is directed to the present invention, as an example of an implementation mode, with reference to the drawings and detailed description, however, the present invention is not limited thereto.

First, the method of manufacturing the light-emitting element of the present invention will be described with reference to FIG. 1. FIG. 1 is a flowchart showing the method of manufacturing the light-emitting element of the present invention.

Initially, the semiconductor wafer with the light-emitting element formed on the substrate is attached to the first adhesive tape formed by the stretchable base material and the island-shaped paste layer, and the semiconductor wafer is divided into a plurality of Light emitting element (refer to S11 of FIG. 1). In this case, it is preferable to use a polyvinyl chloride (PVC) or polypropylene (PP) as the first tape. As the base material portion of the first tape, if such an excellent ductility is used, it can be a tape having sufficient ductility. In addition, the method of dividing the paste layer of the first tape into islands is to cut the paste layer by a blade or a laser, or to form the island-shaped paste layer on the base part by a printing method or a dispensing method On the best. According to such a method, the paste layer can be divided into islands relatively easily.

Next, by extending the first tape, the distance between each of the plurality of light-emitting elements is enlarged (refer to S12 in FIG. 1). At this time, the paste layer of the low ductility of the first tape is cut and arranged island-like on the base portion of high ductility without hindering the elongation of the base portion, so the interval of the light emitting elements will not be greatly disordered, The light-emitting elements can be arranged at arbitrary intervals. In this way, the light-emitting elements formed on the semiconductor wafer can be arranged at an arbitrary interval with good accuracy by the tape extension method.

Next, the plurality of light-emitting elements whose distance between each has been enlarged in S12 are transferred from the first tape to the second tape (refer to S13 in FIG. 1 ).

Next, the plurality of light-emitting elements transferred to the second tape in S13 are bonded to the mounting substrate (refer to S14 in FIG. 1 ). At this time, the light emitting element can be flip-chip bonded to the mounting substrate. When the light emitting element is flip-chip bonded to the mounting substrate, the present invention can be suitably applied.

According to the manufacturing method of the light-emitting device of the present invention described above, the paste layer of the first tape having low ductility is cut and arranged island-like on the base member with high ductility without hindering the elongation of the base member Therefore, the intervals of the light-emitting elements will not be greatly disordered, and the light-emitting elements can be arranged at arbitrary intervals. In this way, the light-emitting elements formed on the semiconductor wafer can be arranged at an arbitrary interval with good accuracy by the tape extension method.

(First implementation type) Next, the first embodiment of the method of manufacturing the light-emitting element of the present invention will be described with reference to FIGS. 2 to 11. The first embodiment of the method of manufacturing the light-emitting element of the present invention is shown in FIGS. 2 to 11.

As shown in FIG. 2, for example, when a red or yellow LED is formed, on the starting substrate 201 selected from GaAs or Ge, the (Al _x Ga _1-x ) _y The active layer 204 formed by In _1-y P (0≦x≦1, 0.4≦y≦0.6) and (Al _x Ga _1-x ) _y In _1-y P(0 (≦x≦1, 0.4≦y≦0.6) The AlGaInP-based DH structure 206 in which the second conductivity type layer 203 and the first conductivity type layer 205 are disposed on both sides of the active layer 204 is fabricated.

The manufacturing method of the AlGaInP DH structure 206 is not limited to MOVPE, but can also be manufactured by the molecular beam epitaxy (MBE) method or the chemical beam epitaxy (CBE) method.

Next, the first electrode 211 is formed by being connected to a part of the first conductivity type layer 205 of the AlGaInP system DH structure 206. When the first conductivity type is P-type, it is formed of a metal containing Zn and Be. The AuZn alloy or AuBe alloy system is suitable. Although a multi-layer structure system containing refractory metals such as Ti, W, Cr, or Ni is suitable, it is not limited to these materials as long as good electrical resistance can be obtained. The metal layer of Zn or Be is contained in AuAg or PtAg of a cheaper metal.

When the first conductivity type is N-type, it is formed of a metal containing Si and Ge. Choosing an AuGe alloy or AuSi alloy system is suitable. Although a multi-layer structure system containing refractory metals such as Ti, W, Cr, or Ni is suitable, it is not limited to these materials as long as good electrical resistance can be obtained. The metal layer of Si or Ge is contained in AuAg or PtAg of a cheaper metal.

Since the first electrode 211 only needs to have a thickness that can withstand the mounting step, although there is no great limitation on the thinness, it is necessary to obtain a film thickness of an ohmic contact, so it is only necessary to have a film thickness of 50 nm or more. Although there is no problem in mounting due to the thickening of the first electrode 211, from the viewpoint of cost reduction, it is suitable to form a system with a film thickness of 3 μm or less.

By wet etching or dry etching, part of the first conductivity type layer 205 and the active layer 204 are removed to expose the second conductivity type layer 203. The etching can be performed with a gas or solution containing chlorine. Etching can be performed not only with the above-mentioned materials, but for the control of etching speed and shape, other materials are mixed.

The second electrode 212 connected to the area where the second conductivity type layer 203 is exposed is provided. When the second conductivity type is P type, it is formed of a metal containing Zn and Be. The AuZn alloy or AuBe alloy system is suitable. Although a multi-layer structure system containing refractory metals such as Ti, W, Cr, or Ni is suitable, it is not limited to these materials as long as good electrical resistance can be obtained. The metal layer of Zn or Be is contained in AuAg or PtAg of a cheaper metal.

When the second conductivity type layer is N-type, it is formed of a metal containing Si and Ge. Choosing an AuGe alloy or AuSi alloy system is suitable. Although a multi-layer structure system containing refractory metals such as Ti, W, Cr, or Ni is suitable, it is not limited to these materials as long as good electrical resistance can be obtained. The metal layer of Si or Ge is contained in AuAg or PtAg of a cheaper metal.

The second electrode 212 only needs to have a thickness that can withstand the mounting step. Although there is no great limitation on the thickness, the film thickness required to obtain an ohmic contact is necessary. Therefore, the film thickness should be 50 nm or more. Although there is no problem in mounting due to the thickening of the second electrode, from the viewpoint of cost reduction, it is suitable to form the system with a film thickness of 3 μm or less.

In addition, for example, in the case of forming a blue or green LED, on the sapphire starting substrate 221, using an organometal vapor growth (MOVPE) method, the Al _x Ga _y In _z N (0≦x≦1, 0≦y ≦1, 0≦z≦1) the active layer 224 and Al _x Ga _y In _z N (0≦x≦1, 0≦y≦1, 0≦z≦1) with a larger energy gap than the active layer 224 The AlGaInN-based DH structure 226 in which the second conductivity type layer 223 and the first conductivity type layer 225 are arranged on both sides of the active layer 224 is produced.

The manufacturing method of the DH structure 226 is not limited to MOVPE, but can also be manufactured by the molecular beam epitaxy (MBE) method or the chemical beam epitaxy (CBE) method.

The first electrode 231 is formed by being connected to a part of the first conductivity type layer 225 of the AlGaInN-based DH structure 226. The first electrode 231 is formed of one or more metals containing Ni, Ti, Al, or Au. As long as good electrical resistance can be achieved, it is not limited to these materials.

The first electrode 231 only needs to have a thickness that can withstand the mounting step. Although the thickness is not too limited, it is necessary to obtain a ohmic contact film thickness. Therefore, the film thickness should be 30 nm or more. Although there is no problem in mounting due to the thickening of the first electrode 231, from the viewpoint of cost reduction, it is suitable to form a system with a film thickness of 3 μm or less.

By the dry etching method, a part of the first conductivity type layer 225 and the active layer 224 are removed, and the second conductivity type layer 223 is exposed. The etching can be performed with a gas or solution containing chlorine. Etching can be performed not only with the above-mentioned materials, but for the control of etching speed and shape, other materials are mixed.

The second electrode 232 connected to the area where the second conductivity type layer 223 is exposed is provided. The second electrode 232 is formed of one or more metals containing Ni, Ti, Al, or Au. As long as good electrical resistance can be achieved, it is not limited to these materials.

The second electrode 232 only needs to have a thickness that can withstand the mounting step, and although the thickness is not too limited, it is necessary to obtain a film thickness of ohmic contact. Therefore, it is only necessary to have a film thickness of 30 nm or more. Although there is no problem in mounting due to the thickening of the second electrode, from the viewpoint of cost reduction, it is suitable to form the system with a film thickness of 3 μm or less.

Next, as shown in FIG. 3, an adhesive tape 252 is prepared. The adhesive tape 252 is formed on a ductile tape base material 250 (base material portion) such as PVC or PP, and a sheet 251 (such as acrylic) is carried in a sheet shape. Paste layer), as shown in FIG. 4, the paste layer part is cut into a cross-shaped shape with a blade dicing, as a sheet 254 (first tape) in which an island-shaped paste part 253 (divided into island-shaped paste layers) is formed ).

Here, when the thickness of the tape base material is A and the thickness of the paste layer is B, the cutting is performed at a setting where the blade cutting height is about 10 μm deeper than that of B. This allows the paste layer to be cut reliably without giving tape The layer (tape substrate) is cut without excessive damage.

In this method, it is necessary to use a cutting groove with a processing width of about 15 μm by the blade dicing, so it is a method that can be applied to a small size of 20 μm intervals or more in a 5 μm square crystal of a mounted component.

Next, as shown in FIG. 5, the wafer formed with the first electrode 211, the first electrode 231, the second electrode 212, and the second electrode 232 is arranged with the island-shaped paste portion 253 which is cut into a cross shape The sheet 254 (first adhesive tape) divided into island-shaped paste layers is arranged and joined so that the first electrode 211, the second electrode 212, the first electrode 231, and the second electrode 232 face the island-shaped paste portion 253, As the joint body 260. If a material transparent to visible light is selected for the sheet 254 (first tape), the alignment of the crystal grain pattern and the island-shaped paste portion 253 is easy.

Next, as shown in FIG. 6, after the wafer is bonded to the sheet 254 (first tape) as the bonded body 260, a split line 261 is formed on the wafer by laser or diamond scribing. After the split line 261 is formed, the wafer is split along the split line 261 to form a die 262. Here, although the case where the split line 261 is formed after the wafer and the sheet 254 (the first tape) are bonded and split is taken as an example, the split line 261 may be formed before the bonding and split after the bonding crack.

Next, as shown in FIG. 7, the distance between each of the plurality of crystal grains 262 is enlarged.

Next, as shown in FIG. 8, the starting substrate 201 and the starting substrate 221 are lifted away. When the starting substrate is the AlGaInP DH structure 206 of the GaAs substrate 201, the AlAs sacrificial layer 202 interposed between the starting substrate 201 and the DH structure 206 is etched with a solution such as HF or BHF to lift off the starting substrate 201 (refer to Figure 2).

When the starting substrate is a sapphire starting substrate 221 and the AlGaInN-based DH structure 226 is irradiated with laser light, the GaN layer at the bottom of the DH structure 226 is dissolved to lift off. In addition, the substrate may not be lifted off or removed.

Next, after the starting substrate 201 and the starting substrate 221 are removed, the tape is expanded so as to have a desired interval to form a sheet 265 in which crystal grains are arranged at a desired interval. At this time, if the tape is warmed in the range of 30 to 50°C (appropriately 35 to 45°C), the uniformity during expansion will be improved compared to that at room temperature.

Next, as shown in FIG. 9, a second tape 275 having a paste layer 273 on the first side 271 and a substrate 274 on the second side 272 is prepared, so that the substrate of the die is lifted off the surface 276 and the paste layer 273 is opposed to the crystal The particles are transferred to the second tape 275. As shown in FIG. 10, the first electrode 211, the first electrode 231, the second electrode 212, and the second electrode 232 are disposed on the sheet 280 opposite to the first surface 271. form.

Next, the mounting substrate 285 on which the drive circuit is formed is prepared. Next, as shown in FIG. 11, the electrode 286, the electrode 287, the electrode 288, and the electrode 289 on the mounting substrate 285 are opposed to the first electrode 211, the first electrode 231, the second electrode 212, and the second electrode 232, and the mounting substrate is bonded 285 and the die are used as the bonding substrate 290. The bonding of the die and the mounting substrate 285 may also form the outermost surfaces of the electrodes of the first electrode 211, the first electrode 231, the second electrode 212, the second electrode 232 and the mounting substrate 285 in Au, and be bonded by ultrasonic pressure To join. Alternatively, a conductive paste or eutectic metal may be formed on the electrode side of the mounting substrate or on the side of the die electrode to achieve bonding of the die and the mounting substrate 285 at a low temperature.

After the bonding substrate 290 is formed, the second tape 275 is lifted off.

Although this embodiment exemplifies the installation steps of visible light-emitting LEDs, it is self-evident that the light emission wavelength of the light emitting element does not affect the installation step, and can be applied regardless of the light emission wavelength of this embodiment mode, regardless of whether the light emitting element is It is needless to say that the infrared light emitting element and the ultraviolet light emitting element can be applied regardless of the emission wavelength.

(Second implementation type) Next, the second embodiment of the method of manufacturing the light-emitting element of the present invention will be described with reference to FIGS. 12 to 21. The second embodiment of the method of manufacturing the light-emitting device of the present invention is shown in FIGS. 12 to 21. In addition, in this embodiment mode, although the method of dividing the paste layer of the first tape into islands is different from the first embodiment mode using laser, except for this point, it is different from the first embodiment mode as the same.

As shown in FIG. 12, for example, in the case of forming a red or yellow LED, as in the first embodiment, on the starting substrate 401 of selected GaAs or Ge, the organic metal vapor growth (MOVPE) method is used to The active layer 404 formed by (Al _x Ga _1-x ) _y In _1-y P (0≦x≦1, 0.4≦y≦0.6) and the energy gap of the active layer 404 is larger (Al _x Ga _1-x ) _y In _1-y P (0≦x≦1, 0.4≦y≦0.6) The second conductivity type layer 403 and the first conductivity type layer 405 are arranged on both sides of the active layer 404, and the AlGaInP DH structure 406 is fabricated .

Next, a part of the first conductivity type layer 405 connected to the AlGaInP-based DH structure 406 forms the first electrode 411 in the same manner as the first embodiment.

Next, as in the first embodiment, a part of the first conductivity type layer 405 and the active layer 404 is removed by wet etching or dry etching to expose the second conductivity type layer 403.

As in the first embodiment, the second electrode 412 connected to the area where the second conductivity type layer 403 is exposed is provided.

In addition, for example, when forming a blue or green LED, as in the first embodiment, on the sapphire starting substrate 421, the Al _x Ga _y In _z N ( 0≦x≦1, 0≦y≦1, 0≦z≦1) the active layer 424 and Al _x Ga _y In _z N (0≦x≦1, 0≦ y≦1, 0≦z≦1) The AlGaInN-based DH structure 426 in which the second conductivity type layer 423 and the first conductivity type layer 425 are arranged on both sides of the active layer 424 is fabricated.

The first electrode 431 is formed in the same manner as the first embodiment mode by being connected to a part of the first conductivity type layer 425 of the AlGaInN-based DH structure 426.

Next, by a dry etching method, a part of the first conductivity type layer 425 and the active layer 424 are removed in the same manner as the first embodiment, and the second conductivity type layer 423 is exposed.

As in the first embodiment, the second electrode 432 connected to the region where the second conductivity type layer 423 is exposed is provided.

Next, as shown in FIG. 13, an adhesive tape 452 is prepared. The adhesive tape 452 is attached to a ductile tape base material 450 (base material portion) such as PVC or PP, and a sheet of acrylic paste 451 (such as Paste layer), as shown in FIG. 14, the paste layer portion is cut into a cross-shaped shape by laser to form a sheet 454 (first tape) having an island-shaped paste portion 453 (divided into island-shaped paste layers) . Since the laser output power is controlled to a low output power to cut the paste layer portion, the paste layer portion can be cut into an island shape without excessive damage to the tape base 450. Since this method has a laser processing width of about 5 μm, it can be applied to a small size of 10 μm or more in a die of about 5 μm square in which components are mounted.

Next, as shown in FIG. 15, as in the first embodiment, the wafer after the first electrode 411, the first electrode 431 and the second electrode 412, and the second electrode 432 are formed is cut into The cross-shaped island-shaped paste portion 453 (divided into island-shaped paste layers) sheet 454 (first tape) is composed of the first electrode 411, the second electrode 412, the first electrode 431, the second electrode 432 and the island-shaped paste The parts 453 are arranged and joined in a relatively opposed manner as the joined body 460.

Next, as shown in FIG. 16, after the wafer and the sheet are bonded as the bonded body 460, a split line 461 is formed on the wafer by laser or diamond scribing. After the split line 461 is formed, the wafer is split along the split line 461 to form a die 462. Here, although the case where the wafer and the wafer are bonded after splitting is taken as an example, the split line 461 may be formed before bonding and split after bonding.

Next, as shown in FIG. 17, the distance between each of the plurality of crystal grains is increased.

Next, as shown in FIG. 18, after performing the cleaving process to increase the distance between the crystal grains, the starting substrate 401 and the starting substrate 421 are lifted off in the same manner as in the first embodiment. When the starting substrate is the AlGaInP DH structure 406 of the GaAs substrate 401, the AlAs sacrificial layer 402 inserted between the starting substrate 401 and the DH structure 406 is etched with a solution such as HF or BHF to lift off the starting substrate 401. In addition, the substrate may not be lifted off or removed.

Next, after the starting substrate 401 and the starting substrate 421 are removed, as in the first embodiment, tape expansion is performed to achieve a desired interval, and a sheet 465 in which crystal grains are arranged at a desired interval is formed.

Next, as shown in FIG. 19, prepare a tape 475 (second tape) having a paste layer 473 on the first side 471 and a base material 474 on the second side 472, so that the substrate lift-off surface 476 of the die faces the paste layer 473 The die is transferred to the tape 475 (second tape). As shown in FIG. 20, the first electrode 411, the first electrode 431, the second electrode 412, and the second electrode 432 are arranged on the first surface 471 as The sheet 480 on the opposite side is formed.

Next, the mounting substrate 485 on which the drive circuit is formed is prepared.

Next, as shown in FIG. 21, the electrode 486, the electrode 487, the electrode 488, the electrode 489 and the first electrode 411, the first electrode 431, and the second electrode 412 on the mounting substrate 485, as in the first embodiment, The second electrode 432 is opposed to each other, and the mounting substrate and the die are bonded to serve as a bonding substrate 490.

After the bonding substrate 490 is formed, the tape 475 (second tape) is lifted off.

Although this embodiment exemplifies the installation steps of visible light-emitting LEDs, it is self-evident that the light emission wavelength of the light emitting element does not affect the installation step, and can be applied regardless of the light emission wavelength of this embodiment mode, regardless of whether the light emitting element is It is needless to say that the infrared light emitting element and the ultraviolet light emitting element can be applied regardless of the emission wavelength.

(Third implementation type) Next, the third embodiment of the method of manufacturing the light-emitting element of the present invention will be described with reference to FIGS. 22 to 30. The third embodiment of the method of manufacturing the light-emitting device of the present invention is shown in FIGS. 22 to 30. In addition, in this embodiment mode, although the island-shaped paste layer is formed by a printing method or a distribution method as a method for dividing the paste layer of the first tape into island-like layers, it is different from the first application mode except that Outside the point, it is the same as the first embodiment.

As shown in FIG. 22, for example, in the case of forming a red or yellow LED, as in the first embodiment, on the starting substrate 601 selected from GaAs or Ge, the organic metal vapor growth (MOVPE) method is used to (Al _x Ga _1-x ) _y In _1-y P (0≦x≦1, 0.4≦y≦0.6) The active layer 604 and the energy gap of the active layer 604 is larger (Al _x Ga _1-x ) _y In _1-y P (0≦x≦1, 0.4≦y≦0.6) AlGaInP based DH structure 606 where the second conductivity type layer 603 and the first conductivity type layer 605 are arranged on both sides of the active layer 604 is fabricated .

Next, the first electrode 611 is formed in a part of the first conductivity type layer 605 connected to the AlGaInP-based DH structure 606 as in the first embodiment.

Next, as in the first embodiment, a part of the first conductivity type layer 605 and the active layer 604 is removed by wet etching or dry etching, and the second conductivity type layer 603 is exposed.

Next, as in the first embodiment, the second electrode 612 connected to the region where the second conductivity type layer 603 is exposed is provided.

For example, when forming a blue or green LED, as in the first embodiment, on the sapphire starting substrate 621, using an organic metal vapor growth (MOVPE) method, Al _x Ga _y In _z N (0≦ x≦1, 0≦y≦1, 0≦z≦1) the active layer 624 and the Al _x Ga _y In _z N (0≦x≦1, 0≦y≦) with a larger energy gap than the active layer 624 1, 0≦z≦1) The AlGaInN-based DH structure 626 in which the second conductivity type layer 623 and the first conductivity type layer 625 are arranged on both sides of the active layer 624 is fabricated.

Next, a part of the first conductivity type layer 625 connected to the AlGaInN-based DH structure 626 forms the first electrode 631 in the same manner as the first embodiment.

Next, by the dry etching method, a part of the first conductivity type layer 625 and the active layer 624 are removed in the same manner as in the first embodiment, and the second conductivity type layer 623 is exposed.

Next, as in the first embodiment, the second electrode 632 connected to the area where the second conductivity type layer 623 is exposed is provided.

Next, as shown in FIG. 23, a sheet 654 (first tape) is prepared. The sheet 654 (first tape) is attached to a ductile tape base material 650 (base material portion) such as PVC or PP to spout nozzle islands The paste material such as acrylic is spitted out to form an island-shaped paste portion 653 (a paste layer divided into islands). Although this method will be affected by the printing accuracy of the print head by the printing method or the dispensing method, but since the paste portion can be provided at a pitch of about 5 μm, it is a small size of more than 10 μm intervals in the grain of about 5 μm square The methods applicable so far.

Next, as shown in FIG. 24, in the same manner as in the first embodiment, the wafer formed with the first electrodes 611 and 631 and the second electrodes 612 and 632 and the island-shaped paste portion 653 in which the crosses are arranged The sheet 654 (divided into an island-shaped paste layer) is arranged and joined such that the electrode 611, the electrode 612, the electrode 631, and the electrode 632 face the island-shaped paste portion 653 as the bonded body 660.

Next, as shown in FIG. 25, after the wafer and the wafer are bonded as the bonded body 660, a split line 661 is formed on the wafer by laser or diamond scribing. After the split line 661 is formed, the wafer is split along the split line 661 to form a die 662. Here, although the case where the wafer and the wafer are bonded after splitting is taken as an example, the split line 661 may be formed before bonding and split after bonding.

Next, as shown in FIG. 26, the distance between each of the plurality of crystal grains is increased.

Next, as shown in FIG. 18, after performing the cleaving process to increase the distance between the crystal grains, the starting substrate 601 and the starting substrate 621 are lifted off in the same manner as in the first embodiment. When the starting substrate is the AlGaInP DH structure 406 of the GaAs substrate 601, the AlAs sacrificial layer 602 inserted between the starting substrate 601 and the DH structure 606 is etched with a solution such as HF or BHF to lift off the starting substrate 601. In addition, the substrate may not be lifted off or removed.

Next, after the starting substrate 601 and the starting substrate 621 are removed, as in the first embodiment, tape expansion is performed to achieve a desired interval, and a sheet 665 in which crystal grains are arranged at a desired interval is formed.

Next, as shown in FIG. 28, prepare a tape 675 (second tape) having a paste layer 673 on the first side 671 and a substrate 674 on the second side 672, so that the substrate of the die is lifted away from the surface 676 and the paste layer 673 Transfer the die to the tape 675 (second tape). As shown in FIG. 29, the first electrode 611, the first electrode 631 and the second electrode 612, and the second electrode 632 are arranged on the first surface 671 as The sheet 680 on the opposite side is formed.

Next, the mounting substrate 685 on which the drive circuit is formed is prepared.

Next, as shown in FIG. 30, the electrode 686, the electrode 687, the electrode 688, the electrode 689 and the first electrode 611, the first electrode 631, and the second electrode 612 on the mounting substrate 685 are similar to the first embodiment. The second electrode 632 is opposed to each other, and the mounting substrate and the die are bonded to serve as a bonding substrate 690.

After the bonding substrate 690 is formed, the tape 675 (second tape) is lifted off.

Although this embodiment exemplifies the installation steps of visible light-emitting LEDs, it is self-evident that the light emission wavelength of the light emitting element does not affect the installation step, and can be applied regardless of the light emission wavelength of this embodiment mode, regardless of whether the light emitting element is It is needless to say that the infrared light emitting element and the ultraviolet light emitting element can be applied regardless of the emission wavelength. [Example]

The following shows examples and comparative examples to explain the present invention more specifically, but the present invention is not limited to these.

(Example 1) On the GaAs substrate 201, an organic metal vapor growth (MOVPE) method was used to convert (Al _x Ga _1-x ) _y In _1-y P (yellow: y=0.5, x=0.15; red: y =0.5, x=0.05) the active layer 204 and the (Al _x Ga _1-x ) _y In _1-y P (x=0.85, y=0.5) second conductivity type with a larger energy gap than the active layer 204 The AlGaInP-based DH structure 206 in which the layer layer 203 and the first conductivity type layer 205 are arranged on both sides of the active layer 204 is fabricated. At this time, the AlAs sacrificial layer 202 is formed with a thickness of 50 nm between the DH structure 206 of the AlGaInP system and the starting substrate 201 (refer to FIG. 2 ).

The semiconductor wafer of such a structure is processed as in the first embodiment, and the paste layer portion is cut into a cross-shaped island-shaped paste portion 253 by dicing the blade, and the PVC in which the island-shaped paste portion 253 is formed A sheet 254 (first tape) as a base material (base material portion) (refer to FIG. 4) is used to join 5-10 μm square crystal grains to the mounting substrate at an interval of 35-100 μm. In addition, the thickness of the base material (base material part) of the sheet (first tape) is 80 μm, and the thickness of the paste part (paste layer) is 5 μm. The paste part is cut into islands at intervals of 20 μm to 50 μm with a blade with a width of 15 μm. .

(Example 2) On the GaAs substrate 401, using an organometal vapor growth (MOVPE) method, (Al _x Ga _1-x ) _y In _1-y P (yellow: y=0.5, x=0.15; red: y =0.5, x=0.05) the active layer 404 and the (Al _x Ga _1-x ) _y In _1-y P (x=0.85, y=0.5) second conductivity type with a larger energy gap than the active layer 404 The AlGaInP-based DH structure 406 in which the layer 403 and the first conductivity type layer 405 are arranged on both sides of the active layer 404 is produced. At this time, the AlAs sacrificial layer 402 is formed with a thickness of 50 nm between the DH structure 406 of the AlGaInP system and the starting substrate 401 (refer to FIG. 12 ).

The semiconductor wafer with such a structure is processed in the second embodiment mode, and the paste layer portion is laser-cut into a cross-shaped island-shaped paste portion 453, and the PVC on which the island-shaped paste portion 453 is formed is used as The base sheet 454 (first tape) (refer to FIG. 14) is used to join 5-10 μm square grains to the mounting substrate at an interval of 35-100 μm. In addition, the thickness of the base material (base material portion) of the sheet (first tape) is 80 μm, and the thickness of the paste portion (paste layer) is 5 μm. The paste portion is cut into islands at intervals of 20 μm to 50 μm by laser.

(Comparative example) The light emitting element was mounted in the same manner as in Example 1 and Example 2 except that the paste portion (paste layer) of the sheet (first tape) was not island-shaped and the interval between crystal grains was 15 to 100 μm.

The results of the position defect rate of Example 1, Example 2, and Comparative Example are shown in FIG. 32. In addition, as the positional defect, there are three types of lateral offset, vertical offset, and rotation as shown in FIG. 31. As can be seen from FIG. 32, Examples 1 and 2 using the first tape with the paste layer divided into islands are compared with the comparative examples using the first tape with the paste layer not divided into islands. Poor location is greatly improved.

In addition, the present invention is not limited to the above-mentioned embodiments. The above-mentioned embodiments are examples, and anyone who has the same technical idea and substantially the same structure as those described in the patent application scope of the present invention and produces the same effect is included in the technical scope of the present invention no matter what.

201‧‧‧Starting substrate 202‧‧‧AlAs sacrificial layer 203‧‧‧Second conductivity type layer 204‧‧‧active layer 205‧‧‧The first conductivity type layer 206‧‧‧DH structure 211‧‧‧First electrode 212‧‧‧Second electrode 221‧‧‧Starting substrate 223‧‧‧Second conductivity type layer 224‧‧‧active layer 225‧‧‧The first conductivity type layer 226‧‧‧DH structure 231‧‧‧First electrode 232‧‧‧Second electrode 250‧‧‧ Tape base material 251‧‧‧ paste 252‧‧‧ Tape 253‧‧‧ Island paste 254‧‧‧ slice 260‧‧‧Conjugate 261‧‧‧ Split line 262‧‧‧grain 265‧‧‧ flakes 271‧‧‧The first side 272‧‧‧Second side 273‧‧‧ Paste 274‧‧‧ Base material 275‧‧‧Second adhesive tape 276‧‧‧The substrate rises off the surface 280‧‧‧ slice 285‧‧‧Mounting board 286‧‧‧electrode 287‧‧‧electrode 288‧‧‧electrode 289‧‧‧electrode 290‧‧‧bond substrate 401‧‧‧Starting substrate 402‧‧‧AlAs sacrificial layer 403‧‧‧Second conductivity type layer 404‧‧‧active layer 405‧‧‧ First conductivity type layer 406‧‧‧DH structure 411‧‧‧First electrode 412‧‧‧Second electrode 421‧‧‧Starting substrate 423‧‧‧Second conductivity type layer 424‧‧‧active layer 425‧‧‧The first conductivity type layer 426‧‧‧DH structure 431‧‧‧First electrode 432‧‧‧Second electrode 450‧‧‧ Tape base material 451‧‧‧ paste 452‧‧‧ Tape 453‧‧‧Island paste 454‧‧‧ slice 460‧‧‧Conjugate 461‧‧‧ Split line 462‧‧‧grain 465‧‧‧ slice 471‧‧‧The first side 472‧‧‧Second side 473‧‧‧ Paste 474‧‧‧ substrate 475‧‧‧ tape 476‧‧‧The substrate rises off the surface 480‧‧‧ slice 485‧‧‧Mounting board 486‧‧‧electrode 487‧‧‧electrode 488‧‧‧electrode 489‧‧‧electrode 490‧‧‧bond substrate 601‧‧‧Starting substrate 602‧‧‧AlAs sacrificial layer 603‧‧‧Second conductivity layer 604‧‧‧active layer 605‧‧‧The first conductivity type layer 606‧‧‧DH structure 611‧‧‧First electrode 612‧‧‧Second electrode 621‧‧‧Starting substrate 623‧‧‧Second conductivity type layer 624‧‧‧Active layer 625‧‧‧The first conductivity type layer 626‧‧‧DH structure 631‧‧‧First electrode 632‧‧‧Second electrode 650‧‧‧ Tape base material 653‧‧‧Island paste 654‧‧‧ slice 660‧‧‧Conjugate 661‧‧‧ Split line 662‧‧‧grain 665‧‧‧ slice 671‧‧‧The first side 672‧‧‧Second side 673‧‧‧Paste layer 674‧‧‧ Base material 675‧‧‧ tape 676‧‧‧The substrate rises off the surface 680‧‧‧ slice 685‧‧‧ mounting board 686‧‧‧electrode 687‧‧‧electrode 688‧‧‧electrode 689‧‧‧electrode 690‧‧‧bond substrate

FIG. 1 is a flowchart showing the method of manufacturing the light-emitting element of the present invention. 2 is a step cross-sectional view showing a first embodiment of the method for manufacturing a light-emitting element of the present invention. 3 is a step cross-sectional view showing a first embodiment of the method for manufacturing a light-emitting element of the present invention. 4 is a step cross-sectional view showing a first embodiment of the method for manufacturing a light-emitting element of the present invention (a drawing continued from FIG. 3 ). 5 is a step cross-sectional view showing a first embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 4 ). 6 is a step cross-sectional view showing a first embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 5 ). 7 is a step cross-sectional view showing a first embodiment of the method for manufacturing a light-emitting element of the present invention (a drawing continued from FIG. 6 ). 8 is a step cross-sectional view showing a first embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 7 ). 9 is a step cross-sectional view showing a first embodiment of the method for manufacturing a light-emitting element of the present invention (a drawing continued from FIG. 8 ). FIG. 10 is a step cross-sectional view (a view continued from FIG. 9) showing a first embodiment of the method of manufacturing the light-emitting element of the present invention. 11 is a step cross-sectional view showing a first embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 10 ). 12 is a step cross-sectional view showing a second embodiment of the method of manufacturing the light-emitting element of the present invention. 13 is a step cross-sectional view showing a second embodiment of the method of manufacturing the light-emitting element of the present invention. 14 is a step cross-sectional view showing a second embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 13 ). 15 is a step cross-sectional view showing a second embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 14 ). 16 is a step cross-sectional view showing a second embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 15 ). 17 is a step cross-sectional view showing a second embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 16 ). 18 is a step cross-sectional view showing a second embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 17 ). FIG. 19 is a step cross-sectional view (a view continued from FIG. 18) showing a second embodiment of the method of manufacturing the light-emitting element of the present invention. 20 is a step cross-sectional view showing a second embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 19 ). 21 is a step cross-sectional view showing a second embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 20 ). 22 is a step cross-sectional view showing a third embodiment of the method of manufacturing the light-emitting element of the present invention. 23 is a step cross-sectional view showing a third embodiment of the method of manufacturing the light-emitting element of the present invention. 24 is a step cross-sectional view showing a third embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 23 ). 25 is a step cross-sectional view showing a third embodiment of the method of manufacturing a light-emitting element of the present invention (a drawing continued from FIG. 24 ). 26 is a step cross-sectional view showing a third embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 25 ). FIG. 27 is a step cross-sectional view showing a third embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 26 ). 28 is a step cross-sectional view showing a third embodiment of the method of manufacturing a light-emitting element of the present invention (a drawing continued from FIG. 27 ). FIG. 29 is a step cross-sectional view showing a third embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 28 ). 30 is a step cross-sectional view showing a third embodiment of the method of manufacturing the light-emitting element of the present invention (a drawing continued from FIG. 29 ). Fig. 31 is a diagram showing an example of poor position (horizontal offset, vertical offset, rotation). FIG. 32 is a graph showing the position defect ratios of Examples 1, 2 and Comparative Examples.

Claims (5)

A method for manufacturing a light-emitting element, including: In the dividing step, the semiconductor wafer with the light-emitting elements formed on the substrate is attached to the first tape, and the semiconductor wafer is divided into a plurality of light-emitting elements; An expansion step, by extending the first adhesive tape, the distance between each of the plurality of light-emitting elements is expanded; In the step of transferring, in a state where the distance between each of the plurality of light-emitting elements has been enlarged, the plurality of light-emitting elements are transferred from the first tape to the second tape; and In the mounting step, the plurality of light-emitting elements are bonded to the mounting substrate, wherein In the dividing step, the first adhesive tape is formed of a stretchable base material and a paste layer. The paste layer uses an object divided into islands, and attaches the plurality of light-emitting elements to the divided This paste layer is island-shaped. The method of manufacturing a light-emitting element according to claim 1, wherein the light-emitting element is flip-chip bonded to the mounting substrate. The method for manufacturing a light-emitting element according to claim 1, wherein the base tape is made of polyvinyl chloride (PVC) or polypropylene (PP) as the first adhesive tape. The method for manufacturing a light-emitting element according to claim 2, wherein the base tape is made of polyvinyl chloride (PVC) or polypropylene (PP) as the first adhesive tape. The method of manufacturing a light-emitting element according to any one of claims 1 to 4, wherein the method of dividing the paste layer of the first tape into islands is to cut the paste layer by a blade or laser, Alternatively, the paste layer in the shape of an island is formed on the base portion by a printing method or a dispensing method.

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