CN112687767B9 - Chip film expanding method - Google Patents

Chip film expanding method Download PDF

Info

Publication number
CN112687767B9
CN112687767B9 CN202011386401.7A CN202011386401A CN112687767B9 CN 112687767 B9 CN112687767 B9 CN 112687767B9 CN 202011386401 A CN202011386401 A CN 202011386401A CN 112687767 B9 CN112687767 B9 CN 112687767B9
Authority
CN
China
Prior art keywords
film
core particles
emitting diode
light emitting
carrier film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011386401.7A
Other languages
Chinese (zh)
Other versions
CN112687767A (en
CN112687767B (en
Inventor
李浩然
肖千宇
蔡永成
闫俊辰
薛康
张少峰
王斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HC Semitek Suzhou Co Ltd
Original Assignee
HC Semitek Suzhou Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HC Semitek Suzhou Co Ltd filed Critical HC Semitek Suzhou Co Ltd
Priority to CN202011386401.7A priority Critical patent/CN112687767B9/en
Publication of CN112687767A publication Critical patent/CN112687767A/en
Application granted granted Critical
Publication of CN112687767B publication Critical patent/CN112687767B/en
Publication of CN112687767B9 publication Critical patent/CN112687767B9/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Led Device Packages (AREA)

Abstract

The disclosure provides a chip film expanding method, and belongs to the technical field of light emitting diodes. If the plurality of light emitting diode core particles on the first bearing film are not uniformly distributed, adjusting operation is required, the first bearing film is heated to be used as a first bearing film of a heat shrinkage film, and the distance between every two adjacent light emitting diode core particles on the first bearing film is zero; and (3) inverting the plurality of light emitting diode core particles on the first bearing film to the second bearing film and expanding the second bearing film to ensure that the distances between every two adjacent light emitting diode core particles are equal. If the plurality of light emitting diode core particles on the second bearing film are not uniformly distributed, repeating the steps until the plurality of light emitting diode core particles on the second bearing film are uniformly distributed. Compared with the traditional mode, the condition that the LED core particles are required to be rearranged or directly scrapped due to irregular arrangement can greatly improve the preparation efficiency of the LED and reduce the preparation cost of the LED.

Description

Chip film expanding method
Technical Field
The disclosure relates to the technical field of light emitting diodes, in particular to a chip film expanding method.
Background
A light emitting diode is a semiconductor electronic component that can emit light. As a novel high-efficiency, environment-friendly and green solid-state illumination light source, the solid-state illumination light source is rapidly and widely applied, such as traffic signal lamps, automobile interior and exterior lamps, urban landscape illumination, mobile phone backlight sources and the like, and the aim of improving the light emitting efficiency of a chip is continuously pursued by light emitting diodes. The light emitting diode epitaxial wafer is a basic structure of a light emitting diode chip, and the light emitting diode chip is prepared from the light emitting diode epitaxial wafer at least through the processes of cutting and splitting, film expanding, sorting, crystal fixing and packaging.
After the light emitting diode epitaxial wafer is subjected to cutting and splitting and film expanding, a plurality of light emitting diode core particles which are spaced from each other and obtained by cutting and splitting the light emitting diode epitaxial wafer are obtained on the first carrier film.
In the film expanding process, if the spacing among the plurality of light emitting diode core particles is not uniform or the arrangement is not uniform due to equipment instability or process fluctuation, the fixing efficiency is affected, and the plurality of light emitting diode core particles need to be rearranged. For the light emitting diode core particles with too small size to be rearranged, the light emitting diode core particles on the first bearing film can be directly scrapped, so that the preparation efficiency of the light emitting diode chip is influenced and waste is caused.
Disclosure of Invention
The embodiment of the disclosure provides a chip film expanding method, which can realize that chips are arranged orderly after film expansion and reduce the cost required for realizing the purpose. The technical scheme is as follows:
the embodiment of the disclosure provides a chip film expanding method, which comprises the following steps:
providing a plurality of light emitting diode core particles on a first carrier film, wherein the distance between every two adjacent light emitting diode core particles is zero, and the first carrier film is a heat shrinkage film;
expanding the first carrier film;
if the light emitting diode core particles on the first bearing film are not uniformly distributed, adjusting the first bearing film to ensure that the light emitting diode core particles are uniformly distributed;
the adjusting operation includes:
heating the first carrier film until the distance between every two adjacent light-emitting diode core particles from the first carrier film to the first carrier film is zero;
the plurality of light emitting diode core particles on the first bearing film are inverted to a second bearing film;
expanding the second carrier film;
if the plurality of light emitting diode core particles on the second bearing film are not uniformly distributed, repeating the steps until the plurality of light emitting diode core particles on the second bearing film are uniformly distributed.
Optionally, the heating the first carrier film includes:
and heating the first bearing film at the temperature of 50-60 ℃.
Optionally, the heating the first carrier film further includes:
and heating the first bearing film for 2-3 min at the temperature of 50-60 ℃.
Optionally, the heating the first carrier film further includes:
and placing the first carrier film on a heating plate for heating.
Optionally, the adjusting operation further comprises:
and before the first bearing film is adjusted, the support ring on the first bearing film is taken down.
Optionally, the flipping of the plurality of led dies on the first carrier film to a second carrier film comprises:
the plurality of light emitting diode core particles on the first bearing film are inverted to the middle bearing film;
and the plurality of light emitting diode core particles on the middle bearing film are inverted to the second bearing film.
Optionally, the second carrier film is a heat shrinkable film.
Optionally, the material of the second carrier film is the same as the material of the first carrier film.
Optionally, the material of the heat shrinkable film is polyvinyl chloride, polyurethane or vinyl.
Optionally, the chip membrane expansion method further includes:
before the first carrier film is adjusted, a measuring instrument is used for checking whether the LED core particles are uniformly distributed.
The beneficial effects brought by the technical scheme provided by the embodiment of the disclosure at least comprise:
the first bearing film is provided with a plurality of light emitting diode core particles, and the distance between every two adjacent light emitting diode core particles is zero. The first bearing film is subjected to film expansion, so that the subsequent sorting and die bonding of the LED core particles can be facilitated. After the first carrier film is expanded, if the plurality of led chips on the first carrier film are not uniformly distributed, the first carrier film needs to be adjusted to make the distance between every two adjacent led chips equal, and then the subsequent sorting and die bonding operations are performed. When the adjustment operation is carried out, the first bearing film is required to be heated first and is used as a first bearing film shrinking film of the heat shrinking film until the distance between every two adjacent light emitting diode core particles on the first bearing film is zero; after the first carrier film reaches this state, the led core particles on the first carrier film need to be flipped to the second carrier film and the second carrier film needs to be expanded, so that the distances between every two adjacent led core particles are equal. If the plurality of light emitting diode core particles on the second bearing film are not uniformly distributed, repeating the steps until the plurality of light emitting diode core particles on the second bearing film are uniformly distributed. When the light-emitting diode core particles on the first bearing film are not arranged integrally enough, the position of the light-emitting diode core particles can be adjusted and subsequent processes can be carried out through the adjustment operations of film shrinkage, film inversion and film re-expansion.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1 is a flow chart of a method for expanding a film on a chip according to an embodiment of the disclosure;
FIG. 2 is a schematic diagram of a plurality of LED core particles provided by an embodiment of the present disclosure;
FIG. 3 is a schematic view of another state of a plurality of LED core particles provided by an embodiment of the present disclosure;
FIG. 4 is a schematic view of a plurality of LED core particles provided by an embodiment of the present disclosure in yet another state;
FIG. 5 is a flow chart of another method for expanding a film on a chip according to an embodiment of the disclosure;
fig. 6 is a flow chart illustrating an adjustment operation provided by an embodiment of the present disclosure.
Detailed Description
To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," "third," and similar terms in the description and claims of the present disclosure are not intended to indicate any order, quantity, or importance, but rather are used to distinguish one element from another. Also, the use of the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprise" or "comprises", and the like, means that the element or item listed before "comprises" or "comprising" covers the element or item listed after "comprising" or "comprises" and its equivalents, and does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", "top", "bottom", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
Fig. 1 is a flowchart of a method for expanding a film on a chip according to an embodiment of the present disclosure, and as shown in fig. 1, the embodiment of the present disclosure provides a method for expanding a film on a chip, where the method for expanding a film on a chip may include:
s101: providing a plurality of light emitting diode core particles on a first bearing film, wherein the distance between every two adjacent light emitting diode core particles is zero, and the first bearing film is a heat shrinkage film.
S102: and expanding the first carrier film.
S103: if the plurality of light emitting diode core particles on the first carrier film are not uniformly distributed, the first carrier film is adjusted to make the distance between every two adjacent light emitting diode core particles equal. The adjusting operation includes: and heating the first bearing film until the distance between every two adjacent light emitting diode core particles from the first bearing film to the first bearing film is zero. And (3) inverting the plurality of light emitting diode core particles on the first bearing film to the second bearing film. And expanding the second carrier film. If the plurality of light emitting diode core particles on the second bearing film are not uniformly distributed, repeating the steps until the plurality of light emitting diode core particles on the second bearing film are uniformly distributed.
The first bearing film is provided with a plurality of light emitting diode core particles, and the distance between every two adjacent light emitting diode core particles is zero. The first bearing film is subjected to film expansion, so that the subsequent sorting and die bonding of the LED core particles can be facilitated. After the first carrier film is expanded, if the plurality of led chips on the first carrier film are not uniformly distributed, the first carrier film needs to be adjusted to make the distance between every two adjacent led chips equal, and then the subsequent sorting and die bonding operations are performed. When the adjustment operation is carried out, the first bearing film is required to be heated first and is used as a first bearing film shrinking film of the heat shrinking film until the distance between every two adjacent light emitting diode core particles on the first bearing film is zero; after the first carrier film reaches this state, the led core particles on the first carrier film need to be flipped to the second carrier film and the second carrier film needs to be expanded, so that the distances between every two adjacent led core particles are equal. If the plurality of light emitting diode core particles on the second bearing film are not uniformly distributed, repeating the steps until the plurality of light emitting diode core particles on the second bearing film are uniformly distributed. When the light-emitting diode core particles on the first bearing film are not arranged integrally enough, the position of the light-emitting diode core particles can be adjusted and subsequent processes can be carried out through the adjustment operations of film shrinkage, film inversion and film re-expansion. If the distance between every two adjacent light emitting diode core particles on the first bearing film is equal after the first bearing film is expanded, the light emitting diode core particles on the first bearing film are directly sorted, subjected to crystal solidification and the like.
It should be noted that, for a plurality of light emitting diode core particles which are not arranged in an orderly manner on the first carrier film, the first carrier film is rearranged, the preparation cost needs to be increased by 30% -50% on the basis of the original preparation cost of the light emitting diode, the first carrier film is shrunk, then the plurality of light emitting diode core particles are inversed to the second carrier film and expanded, and the preparation cost only needs to be increased by 0.4% on the basis of the original preparation cost of the light emitting diode. The whole manufacturing cost of the LED can be greatly reduced.
For convenience of understanding, a state diagram of a plurality of led core particles on a first carrier film may be provided, and fig. 2 is a state diagram of a plurality of led core particles provided in an embodiment of the disclosure, and referring to fig. 2, it can be seen that a plurality of led core particles 200 are placed on a first carrier film 100, the plurality of led core particles 200 are closely attached to each other, a distance between two adjacent led core particles 200 is zero, and at this time, the first carrier film 100 has not been subjected to film expansion.
Fig. 3 is another state diagram of a plurality of led core particles provided in the embodiment of the disclosure, and referring to fig. 3, it can be seen that, after the film expansion is performed on the first carrier film 100, distances between the plurality of led core particles 200 on the first carrier film 100 are all expanded, and distances between every two adjacent led core particles 200 are all equal.
In fig. 3, a support ring 300 is correspondingly disposed on the circumference of the first carrier film 100 for supporting the first carrier film 100 to prevent the first carrier film 100 from retracting.
Fig. 4 is a schematic view of another state of a plurality of led core particles provided in an embodiment of the disclosure, referring to fig. 4, it can be seen that, after the film spreading process is performed on the first carrier film 100, distances between the led core particles 200 on the first carrier film 100 are all enlarged, but on the first carrier film 100, the distances between every two adjacent led core particles 200 are not completely equal, and the positions of the led core particles 200 are deviated from the positions of the other led core particles 200, so that the led core particles 200 need to be rearranged to avoid affecting subsequent sorting and die bonding.
Fig. 5 is a flowchart of another chip film expanding method provided in the embodiment of the present disclosure, and referring to fig. 5, the chip film expanding method may further include:
s201: providing a plurality of light emitting diode core particles on a first bearing film, wherein the distance between every two adjacent light emitting diode core particles is zero, and the first bearing film is a heat shrinkage film.
In step S201, the plurality of led core particles on the first carrier film may be obtained by dicing the same led epitaxial wafer.
In other implementations provided by the present disclosure, the plurality of light emitting diode core particles on the first carrier film may be placed in other manners. The present disclosure is not so limited.
Exemplarily, the first carrier film may be a blue film. Easy preparation and acquisition.
Optionally, the material of the heat shrinkable film is polyvinyl chloride, polyurethane or vinyl.
When the material of the heat shrinkable film is the above materials, the heat shrinkable film has good shrinkage capability and is not easy to damage, and can bear the shrinkage after the film expansion. The heat resistance is also good.
When the specification and the model of the heat shrinkable film are in the types, the first carrier film can be ensured to be capable of stably performing the film expanding and shrinking processes, and the thickness of the heat shrinkable film is enough to ensure that heat can not be excessively transferred to the light-emitting diode core particles on the first carrier film, so that the heat shrinkable film has a certain protection effect on the light-emitting diode core particles on the first carrier film.
The blue film is also one of the heat shrinkable films.
It should be noted that, in the embodiment of the present disclosure, the light emitting diode epitaxial wafer for cutting may be grown by using VeecoK465iorC4 orrbmcvd (metalorganic chemical vapor deposition) equipment. By using high-purity H2(Hydrogen) or high purity N2(Nitrogen) or high purity H2And high purity N2The mixed gas of (2) is used as a carrier gas, high-purity NH3As an N source, trimethyl gallium (TMGa) and triethyl gallium (TEGa) as gallium sources, trimethyl indium (TMIn) as indium sources, silane (SiH4) as an N-type dopant, trimethyl aluminum (TMAl) as an aluminum source, and magnesium dicylocene (CP)2Mg) as a P-type dopant.
S202: and expanding the first carrier film.
Step S202 may include:
mounting a support ring on the first bearing film;
and carrying out film expansion treatment on the first carrier film by using a film expansion machine.
The membrane expansion of the first carrier membrane can be conveniently realized.
The structure of the support ring can be seen in fig. 3.
S203: before the adjustment operation is performed on the first carrier film, whether the plurality of light emitting diode core particles are uniformly distributed or not is checked by using a measuring instrument.
Whether the distance between every two adjacent light emitting diode core particles is equal is checked by using a measuring instrument, whether the distribution of the plurality of light emitting diode core particles on the first bearing film is uniform can be conveniently checked, and then the first bearing film and the plurality of light emitting diode core particles on the first bearing film are subjected to subsequent treatment.
Illustratively, the measuring instrument may be a measuring ruler, or the measuring instrument may be a measuring instrument or the like.
The measuring scale or the measuring instrument can rapidly measure and determine the distance, so that whether the distribution of the plurality of light emitting diode core particles on the first bearing film is uniform or not can be conveniently checked.
It should be noted that, when the instrument is used to check whether the plurality of led core particles on the first carrier film are uniformly distributed, and when the tolerance of the distance between every two adjacent led core particles is within the range of 10um to 20um, it can be checked that the plurality of led core particles on the first carrier film are uniformly distributed.
Alternatively, since the first carrier film is uniformly expanded during the film expansion of the first carrier film, the plurality of led core particles on the first carrier film are also uniformly expanded on the first carrier film, and the led core particles are generally rectangular. Therefore, when the measuring instrument is used to inspect the plurality of light emitting diode core particles on the first carrier film, the measuring instrument may also simply inspect whether there are light emitting diode core particles with edges protruding relative to other light emitting diode core particles in the plurality of light emitting diode core particles distributed in an array on the first carrier film.
If the light emitting diode core particles with the edges protruding relative to other light emitting diode core particles exist, the plurality of light emitting diode core particles on the first bearing film are not uniformly distributed, and if the light emitting diode core particles with the edges protruding relative to other light emitting diode core particles do not exist, the plurality of light emitting diode core particles on the first bearing film can be preliminarily checked to be uniformly distributed.
It should be noted that, in other implementation manners provided in the present disclosure, whether the plurality of led core particles on the first carrier film are uniformly distributed may also be checked by naked eyes. For example, the led core particles are usually rectangular, and if there are a plurality of led core particles on the first carrier film, the edges of which are not aligned with the edges of other led core particles, the distribution of the led core particles on the first carrier film is not uniform, and needs to be adjusted.
S204: if the plurality of light emitting diode core particles on the first carrier film are not uniformly distributed, the first carrier film is adjusted to uniformly distribute the plurality of light emitting diode core particles.
For ease of understanding, the adjusting operation may be further described herein, the adjusting operation may refer to fig. 6, fig. 6 is a schematic flow chart of the adjusting operation provided by the embodiment of the disclosure, and referring to fig. 6, the adjusting operation may include:
s2041: and removing the support ring on the first carrier film.
Before the first carrier film is subjected to subsequent heating and other operations, the support ring on the first carrier film can be taken down firstly, so that the first carrier film can be stably contracted when being heated, and the stable film contraction process is ensured.
S2042: and heating the first bearing film until the distance between every two adjacent light emitting diode core particles from the first bearing film to the first bearing film is zero.
Optionally, step S2042 may include:
the first carrier film is heated at a temperature of 50 ℃ to 60 ℃.
When the temperature range of heating first carrier film is in above scope, the temperature of heating first carrier film is comparatively reasonable, can not influence the normal function of emitting diode core grain on the first carrier film, guarantees that first carrier film is being heated and carrying out the in-process that contracts, and a plurality of emitting diode core grains on the first carrier film can not receive the influence of high temperature.
Illustratively, the heating the first carrier film further comprises:
and heating the first bearing film for 2-3 min at the temperature of 50-60 ℃.
The heating time of the first carrier film is within the range, the obtained first carrier film can be completely shrunk, the accumulated heat of the first carrier film cannot be very high, the plurality of light-emitting diode core particles on the first carrier film are not affected by high temperature, and the light-emitting diode core particles can normally work.
Optionally, step S2042 may further include:
the first carrier film is placed on a heating plate and heated.
The first bearing film is placed on the heating plate to be heated, so that the first bearing film can be uniformly heated, the first bearing film can be uniformly contracted, and finally, the condition that the intervals of the plurality of light emitting diodes on the first bearing film are zero is realized.
It should be noted that, when the hot plate heats first carrier film, the heating source in the hot plate is evenly distributed on the face of hot plate to guarantee that the hot plate itself can also evenly heat first carrier film, finally guarantee that first carrier film can evenly contract.
S2043: and (3) inverting the plurality of light emitting diode core particles on the first bearing film to the second bearing film.
Optionally, step S2043 may include:
the method comprises the steps of (1) inversing a plurality of light emitting diode core particles on a first bearing film to a middle bearing film; and (4) the plurality of LED core particles on the middle bearing film are inverted to the second bearing film.
After the light emitting diode core particles on the first bearing film are inverted to the middle bearing film, the middle bearing film is used as transition, and finally the light emitting diode core particles are inverted to the second bearing film, and the inversion twice can ensure that the front and back sides of the light emitting diode core particles on the second bearing film are the same as the front and back sides of the light emitting diode core particles on the first bearing film.
Optionally, the film reversing process can be performed by a film reversing machine. The film inversion of a plurality of light emitting diode core particles is convenient to realize.
Alternatively, the intermediate carrier film may be a heat shrinkable film or a carrier film other than a heat shrinkable film, which is not limited by the present disclosure.
Alternatively, the second carrier film may be a heat shrinkable film.
The second carrier film is a heat shrinkage film, so that even if the plurality of light emitting diode core particles are unevenly distributed after the second carrier film is subjected to film expansion, the second carrier film can be heated and shrunk, and the plurality of light emitting diode core particles are inverted to a brand new film and subjected to film expansion until the plurality of light emitting diode core particles are evenly distributed on the film finally.
Optionally, the material of the second carrier film is the same as the material of the first carrier film. The material is convenient to obtain and operate.
S2044: and expanding the second carrier film.
Exemplarily, the film expansion of the second carrier film may also be performed by a film expansion machine.
S2045: and checking whether the plurality of light emitting diode core particles on the second bearing film are uniformly distributed or not.
Alternatively, the inspection of whether the plurality of led core particles on the second carrier film are uniformly distributed may be performed by a measuring instrument, or may be performed in the same manner as in step S203. The manner of checking whether the led core particles are uniformly distributed is not described herein again.
S2046: if the plurality of light emitting diode core particles on the second bearing film are not uniformly distributed, repeating the steps until the plurality of light emitting diode core particles on the second bearing film are uniformly distributed.
It should be noted that, in the implementation manner provided in the present disclosure, when the first carrier film is heated to shrink the film, although the first carrier film shrinks to the extent that the distance between all the adjacent two led core particles is zero, there may be a case where the first carrier film itself is affected by uneven heat, and the first carrier film itself does not shrink uniformly. At this time, even if the first carrier film is expanded, the led cores on the first carrier film are not uniformly distributed after the first carrier film is expanded. Therefore, after the heat shrinkage film is heated, the plurality of light emitting diode core particles on the first bearing film need to be inverted to a brand new second bearing film for film expansion, and then the plurality of light emitting diode core particles which are uniformly distributed can be obtained.
And the occurrence probability of the condition that the distribution of the LED core particles on the bearing film is not uniform is 0.5 percent. Therefore, the second or third adjustment operation is usually performed to achieve uniform distribution of the led core particles.
Although the present disclosure has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure.

Claims (10)

1. A chip film expanding method is characterized by comprising the following steps:
providing a plurality of light emitting diode core particles on a first carrier film, wherein the distance between every two adjacent light emitting diode core particles is zero, and the first carrier film is a heat shrinkage film;
expanding the first carrier film;
if the plurality of light emitting diode core particles on the first carrier film are not uniformly distributed, adjusting the first carrier film to ensure that the plurality of light emitting diode core particles are uniformly distributed, wherein the non-uniform distribution of the plurality of light emitting diode core particles on the first carrier film means that the intervals between every two adjacent light emitting diode core particles on the first carrier film are not completely equal;
the adjusting operation includes:
heating the first carrier film until the distance between every two adjacent light-emitting diode core particles from the first carrier film to the first carrier film is zero;
the plurality of light emitting diode core particles on the first bearing film are inverted to a second bearing film;
expanding the second carrier film;
if the plurality of light emitting diode core particles on the second bearing film are not uniformly distributed, repeating the steps until the plurality of light emitting diode core particles are uniformly distributed.
2. The method for expanding a film on a chip according to claim 1, wherein the heating the first carrier film comprises:
and heating the first bearing film at the temperature of 50-60 ℃.
3. The method for expanding a film on a chip according to claim 2, wherein the heating the first carrier film further comprises:
and heating the first bearing film for 2-3 min at the temperature of 50-60 ℃.
4. The method for expanding a film on a chip according to claim 2, wherein the heating the first carrier film further comprises:
and placing the first carrier film on a heating plate for heating.
5. The method for film expanding on a chip according to any one of claims 1 to 3, wherein the adjusting operation further comprises:
and before the first bearing film is adjusted, the support ring on the first bearing film is taken down.
6. The method for film expanding of the chip according to any one of claims 1 to 3, wherein the step of flipping the plurality of LED chips on the first carrier film to a second carrier film comprises:
the plurality of light emitting diode core particles on the first bearing film are inverted to the middle bearing film;
and the plurality of light emitting diode core particles on the middle bearing film are inverted to the second bearing film.
7. The chip film expanding method according to any one of claims 1 to 3, wherein the second carrier film is a heat shrinkable film.
8. The method for film expanding on a chip according to any one of claims 1 to 3, wherein the material of the second carrier film is the same as the material of the first carrier film.
9. The chip film expanding method according to any one of claims 1 to 3, wherein the material of the heat shrinkable film is polyvinyl chloride, polyurethane or vinyl.
10. The chip film expanding method according to any one of claims 1 to 3, further comprising:
before the first carrier film is adjusted, a measuring instrument is used for checking whether the LED core particles are uniformly distributed.
CN202011386401.7A 2020-12-01 2020-12-01 Chip film expanding method Active CN112687767B9 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011386401.7A CN112687767B9 (en) 2020-12-01 2020-12-01 Chip film expanding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011386401.7A CN112687767B9 (en) 2020-12-01 2020-12-01 Chip film expanding method

Publications (3)

Publication Number Publication Date
CN112687767A CN112687767A (en) 2021-04-20
CN112687767B CN112687767B (en) 2021-11-05
CN112687767B9 true CN112687767B9 (en) 2021-12-03

Family

ID=75447051

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011386401.7A Active CN112687767B9 (en) 2020-12-01 2020-12-01 Chip film expanding method

Country Status (1)

Country Link
CN (1) CN112687767B9 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106816404A (en) * 2017-01-19 2017-06-09 吉林麦吉柯半导体有限公司 The expansion film of wafer takes the production method of a method and wafer
CN109075048A (en) * 2016-06-30 2018-12-21 琳得科株式会社 Sheet for processing semiconductor
CN208368534U (en) * 2018-06-29 2019-01-11 安徽三安光电有限公司 A kind of expansion film, test, integrated machine for sorting
JP2019016663A (en) * 2017-07-05 2019-01-31 株式会社ディスコ Method for dividing wafer
CN109326560A (en) * 2017-07-31 2019-02-12 巴伦电子有限公司 Chip wafer separation method
TW202004851A (en) * 2018-05-22 2020-01-16 日商信越半導體股份有限公司 Method of manufacturing light emitting element

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109075048A (en) * 2016-06-30 2018-12-21 琳得科株式会社 Sheet for processing semiconductor
CN106816404A (en) * 2017-01-19 2017-06-09 吉林麦吉柯半导体有限公司 The expansion film of wafer takes the production method of a method and wafer
JP2019016663A (en) * 2017-07-05 2019-01-31 株式会社ディスコ Method for dividing wafer
CN109326560A (en) * 2017-07-31 2019-02-12 巴伦电子有限公司 Chip wafer separation method
TW202004851A (en) * 2018-05-22 2020-01-16 日商信越半導體股份有限公司 Method of manufacturing light emitting element
CN208368534U (en) * 2018-06-29 2019-01-11 安徽三安光电有限公司 A kind of expansion film, test, integrated machine for sorting

Also Published As

Publication number Publication date
CN112687767A (en) 2021-04-20
CN112687767B (en) 2021-11-05

Similar Documents

Publication Publication Date Title
US11569293B2 (en) Micro-LED displays
US9406851B2 (en) Surface-textured encapsulations for use with light emitting diodes
US11621371B2 (en) Epitaxial structure, preparation method thereof, and LED
CN112687767B9 (en) Chip film expanding method
CN112775030B (en) Light emitting diode chip sorting method
CN109244202A (en) A kind of GaN base Quantum Well LED epitaxial structure containing strain compensating structure
JPH03173423A (en) Manufacture of p-n junction element
CN113584582B (en) Epitaxial tray and preparation method of light-emitting diode epitaxial wafer applied to epitaxial tray
CN103280514A (en) Method for automatically packaging LED module
CN105679892A (en) Epitaxial structure of light emitting diode and epitaxial growth method therefor
CN106935678A (en) Preparation method of solar battery and system
CN211238291U (en) Light emitting diode with adjustable light emitting surface
CN102437199A (en) Table-board type unidirectional negative resistance diode chip and manufacturing method thereof
US20220231187A1 (en) Patterned substrate, epitaxial wafer, manufacturing method, storage medium and led chip
CN106206869A (en) A kind of growing method of GaN base LED epitaxial slice
CN108428771A (en) A kind of production method and device of micro-led display screen
CN113594319B (en) Light emitting diode epitaxial wafer with composite substrate and preparation method thereof
CN112993095B (en) Preparation method of light emitting diode epitaxial wafer
CN203007407U (en) Chemical vapor deposition equipment
CN110379726B (en) Method for row-by-row COB-LED row test
CN214254445U (en) Semiconductor epitaxial structure and LED chip
CN114686977B (en) Epitaxial tray for improving substrate temperature uniformity
CN105118900A (en) Growth method for GaN-based LED epitaxial wafer
KR102182015B1 (en) Method for evaluating a luminance of a light source and lighting apparatus
CN107331673B (en) CMOS (complementary Metal oxide semiconductor) process compatible ambient light sensor and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CI03 Correction of invention patent
CI03 Correction of invention patent

Correction item: Claims

Correct: Claims submitted on October 27, 2021

False: Claims submitted on September 8, 2021

Number: 45-02

Page: ??

Volume: 37