CN107331673B - CMOS (complementary Metal oxide semiconductor) process compatible ambient light sensor and preparation method thereof - Google Patents
CMOS (complementary Metal oxide semiconductor) process compatible ambient light sensor and preparation method thereof Download PDFInfo
- Publication number
- CN107331673B CN107331673B CN201610274649.1A CN201610274649A CN107331673B CN 107331673 B CN107331673 B CN 107331673B CN 201610274649 A CN201610274649 A CN 201610274649A CN 107331673 B CN107331673 B CN 107331673B
- Authority
- CN
- China
- Prior art keywords
- epitaxial layer
- substrate
- ambient light
- groups
- light sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 67
- 230000008569 process Effects 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000004065 semiconductor Substances 0.000 title abstract description 5
- 230000000295 complement effect Effects 0.000 title abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 4
- 150000004706 metal oxides Chemical class 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052710 silicon Inorganic materials 0.000 abstract description 16
- 239000010703 silicon Substances 0.000 abstract description 16
- 230000004044 response Effects 0.000 abstract description 11
- 238000013461 design Methods 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000032900 absorption of visible light Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention provides an environment light sensor compatible with a CMOS (complementary metal oxide semiconductor) process and a preparation method thereof, wherein the preparation method comprises the following steps: providing a substrate, and forming an epitaxial layer on the substrate; doping in the epitaxial layer to form a photodiode; the photosensitive diodes are divided into two groups which are distributed at intervals, and a metal layer is formed on one group of photosensitive diodes. The invention adopts two or two groups of silicon photodiodes, wherein one group of silicon photodiodes has normal response, namely response in both visible light and infrared light; the other group of diodes only responds to infrared light through special design, and the response of visible light is much smaller. The difference between the two groups of silicon photodiodes can be extracted by a subsequent signal processing circuit, and the sensing of the ambient light can be realized by combining a software algorithm. The invention does not need extra coating process, is completely compatible with CMOS process of various size types, greatly simplifies the preparation process and improves the detection precision.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to an ambient light sensor compatible with a CMOS (complementary metal oxide semiconductor) process and a preparation method thereof.
Background
The ambient light sensor is a common sensor, is widely applied in the fields of mobile phones, notebooks, tablet computers and the like, is mainly used for monitoring the brightness of ambient light, informing the processing chip to intelligently adjust the brightness of the display screen, helping the screen to provide soft light and saving the power consumption of the screen.
At present, the mainstream ambient light sensor adopts digital output, and an ambient light receiver and a digital circuit at the rear end are integrated on a silicon chip. The ambient light receiver is typically fabricated using silicon photodiodes, which are compatible with CMOS circuit processes. The ambient light sensor can only receive visible light by realizing the similar function of human eyes, but a general silicon photodiode not only responds to visible light, but also responds to infrared light, so that the difficulty in design of the ambient light sensor is to suppress the response of the general silicon photodiode to the infrared light.
The following two methods are mainstream:
1. the film is coated on the silicon photodiode, and the film can only transmit visible light and reflect a large amount of infrared light by optimizing the design of the film.
This approach has two problems: (1) the plating process is not compatible with standard CMOS processes. A special coating factory is required for coating process processing, a procedure is added, the probability of pollution and failure of the chip is increased, and the production cost is increased; (2) due to the coating process, a certain amount of film layer nonuniformity must exist, the thickness control of each film layer is not very accurate, and certain differences exist, which can bring great influence on the optical characteristics of the film layers, reduce the infrared light reflecting capacity of the film layers and influence the final detection result.
2. Two or two groups of silicon photodiodes are designed, wherein one or one group of photodiodes is covered by thicker polysilicon. Thicker polysilicon is effective at absorbing visible light but absorbs less infrared light. This results in a difference in the response of the two or more sets of photodiodes in the visible portion. In conjunction with subsequent circuitry or software algorithms, the difference can be extracted, enabling sensing of ambient light.
The problem with this approach is that the thickness of the overlying polysilicon is thick enough to reach the um level, and CMOS processes that achieve this thickness are typically dual poly processes with line widths above 0.35 um. But with the development of integrated circuit technology, 0.18um and even smaller line width technology becomes mainstream. In these processes, the thickness of the polysilicon is significantly reduced and the absorption of visible light is no longer intense, thus making the implementation of this solution more difficult.
Therefore, how to design the ambient light sensor under the condition of being compatible with the CMOS process, simplify the fabrication process of the ambient light sensor, and improve the accuracy of ambient light detection has become one of the problems to be solved urgently by those skilled in the art.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an ambient light sensor compatible with CMOS process and a method for manufacturing the same, which are used to solve the problem that the fabrication process of the ambient light sensor is incompatible with CMOS process in the prior art.
To achieve the above and other related objects, the present invention provides a CMOS process compatible ambient light sensor including at least:
the light-sensitive diode comprises a substrate, an epitaxial layer positioned on the substrate, two groups of light-sensitive diodes which are distributed in the epitaxial layer at intervals, and a metal layer covering one group of light-sensitive diodes.
Preferably, the substrate is a P-type substrate, the epitaxial layer is a P-type epitaxial layer, the P region of the photodiode is the P-type epitaxial layer, and the N region is an N-type doped region.
Preferably, the distance between two groups of photodiodes distributed at intervals is smaller than the diffusion length of photogenerated carriers.
More preferably, the distance between two groups of photodiodes which are distributed at intervals is 3-5 um.
To achieve the above and other related objects, the present invention provides a method for manufacturing a CMOS process compatible ambient light sensor, the method at least comprising:
step S1: providing a substrate, and forming an epitaxial layer on the substrate;
step S2: doping in the epitaxial layer to form a photodiode;
step S3: the photosensitive diodes are divided into two groups which are distributed at intervals, and a metal layer is formed on one group of photosensitive diodes.
Preferably, step S2 is compatible with the process of making wells in CMOS processes.
Preferably, step S3 is compatible with the process of preparing the underlying metal in a CMOS process.
Preferably, the substrate is a P-type substrate, the epitaxial layer is a P-type epitaxial layer, and N-type doping is performed in the P-type epitaxial layer to form the photodiode.
Preferably, the distance between the doped regions forming the photodiode is less than the diffusion length of the photogenerated carriers.
More preferably, the distance between the doped regions forming the photodiode is 3-5 um.
As described above, the ambient light sensor compatible with the CMOS process and the method for manufacturing the same of the present invention have the following advantageous effects:
the invention provides a CMOS process compatible ambient light sensor and a preparation method thereof, and provides a novel ambient light sensor.
Drawings
Fig. 1 to fig. 2 are schematic diagrams illustrating a method for manufacturing a CMOS process compatible ambient light sensor according to the present invention.
Fig. 3 is a graph showing a response spectrum of a CMOS process compatible ambient light sensor of the present invention.
Description of the element reference numerals
1 CMOS process compatible ambient light sensor
11 substrate
12 epitaxial layer
13N type doped region
14 metal layer
S1-S3
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 3. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
As shown in fig. 1 to fig. 2, the present invention provides a method for manufacturing a CMOS process compatible ambient light sensor, where the method for manufacturing a CMOS process compatible ambient light sensor at least includes:
step S1: a substrate 11 is provided and an epitaxial layer 12 is formed on the substrate 11.
Specifically, as shown in fig. 1, the substrate 11 is located at a bottom layer, and in this embodiment, the substrate 11 is a P-type substrate and is made of silicon. The material of the substrate 11 may be any material that can be used as a base, and is not limited to this embodiment. And depositing the epitaxial layer 12 on the surface of the substrate 11, wherein in the present embodiment, the epitaxial layer 12 is a P-type epitaxial layer and is consistent with the substrate 11.
Step S2: n-type doping is performed in the epitaxial layer 12 to form a photodiode.
Specifically, as shown in fig. 1, doping is performed in the epitaxial layer 12, the process for manufacturing the photodiode is compatible with the process for manufacturing the well in the CMOS process, and the photodiode is formed while forming the well. In the present embodiment, an N-well and an N-region of the photodiode are formed in the P-type epitaxial layer 12 by N-type doping. The P-type epitaxial layer 12 serves as a P region of the photodiode, and the N-type doped region 13 serves as an N region of the photodiode, so as to form a PN junction.
The distance d between the N-type doped regions 13 forming the photodiode is less than the diffusion length of the photogenerated carriers, and specifically, the distance d between the N-type doped regions 13 is set to be 3-5 um.
Step S3: the photodiodes are divided into two groups which are alternately arranged, and a metal layer 14 is formed on one of the groups of photodiodes.
Specifically, as shown in fig. 2, the N-type doped regions 13 are divided into two groups, i.e., a group a and a group B, which are distributed at intervals, and the metal layer 14 is deposited on the N-type doped regions in the group B. The process for preparing the Metal layer 14 is compatible with the process for preparing the bottom Metal 1, and the Metal layer 14 is formed at the same time as the bottom Metal 1.
As shown in fig. 2, the present invention provides a CMOS process compatible ambient light sensor 1, where the CMOS process compatible ambient light sensor 1 includes:
the substrate 11 is located at the bottom layer, and in this embodiment, the substrate 11 is a P-type substrate made of silicon.
An epitaxial layer 12, where the epitaxial layer 12 is located on the surface of the substrate 11, and in this embodiment, the epitaxial layer 12 is a P-type epitaxial layer.
Two groups of photodiodes are distributed in the epitaxial layer 12 at intervals, each photodiode comprises a P region and an N region, in this embodiment, the epitaxial layer 12 is used as the P region of the photodiode, and an N-type doped region is formed in the epitaxial layer 12 and used as the N region of the photodiode. The distance between two groups of photodiodes distributed at intervals is less than the diffusion length of photon-generated carriers. Preferably, the distance between two groups of photodiodes which are distributed at intervals is 3-5 um.
One of the photodiodes is covered with a metal layer 14, and in this embodiment, the surface of the photodiode of the group B is covered with the metal layer 14, so as to realize different responses of the two photodiodes. As shown in fig. 3, where group a photodiodes respond to both visible light and infrared light, group B photodiodes respond to only infrared light. The material of the metal layer 14 may be any material that is not transparent to visible light.
When visible light irradiates the surface of the photodiode, the A group of photodiodes can effectively absorb the visible light, and the B group of photodiodes cannot receive the visible light because the visible light cannot penetrate through metal, and most of photon-generated carriers generated by the visible light are concentrated near PN junctions of the A group of photodiodes because the absorption coefficient of the visible light in silicon is large.
When infrared light irradiates the surface of the photodiode, the infrared light can penetrate through the PN junction to reach the epitaxial layer 12 due to the fact that the absorption coefficient of silicon to the infrared light is smaller than that of visible light, photo-generated carriers are excited in the epitaxial layer 12, and the photo-generated carriers are freely diffused to the position near the PN junction. Because the A group of the photodiodes and the B group of the photodiodes are close to each other and are smaller than the diffusion length of the photon-generated carriers, the photon-generated carriers partially diffuse into PN junctions of the A group of the photodiodes and partially diffuse into PN junctions of the B group of the photodiodes, namely the B group of the photodiodes can also receive partial photoelectric carriers, so that the B group of the photodiodes can respond to infrared light. This achieves a difference in the response spectra of the two.
In this embodiment, the ambient light sensor of the present application is implemented by using a P-type substrate, a P-type epitaxial layer, and an N-type doped region, and on this basis, those skilled in the art can implement the ambient light sensor of the present application by using an N-type substrate, an N-type epitaxial layer, and a P-type doped region.
The invention adopts two or two groups of silicon photodiodes, wherein one group of silicon photodiodes has normal response, namely response in both visible light and infrared light; the other group of diodes only responds to infrared light through special design, and the response of visible light is much smaller. The difference between the two groups of silicon photodiodes can be extracted by a subsequent signal processing circuit, and the sensing of the ambient light can be realized by combining a software algorithm.
As described above, the ambient light sensor compatible with the CMOS process and the method for manufacturing the same of the present invention have the following advantageous effects:
the invention provides a CMOS process compatible ambient light sensor and a preparation method thereof, and provides a novel ambient light sensor.
In summary, the present invention provides an ambient light sensor compatible with CMOS process, at least comprising: the light-sensitive diode comprises a substrate, an epitaxial layer positioned on the substrate, two groups of light-sensitive diodes which are distributed in the epitaxial layer at intervals, and a metal layer covering one group of light-sensitive diodes. Also provided is a method for preparing an ambient light sensor compatible with CMOS process, at least comprising: providing a substrate, and forming an epitaxial layer on the substrate; doping in the epitaxial layer to form a photodiode; the photosensitive diodes are divided into two groups which are distributed at intervals, and a metal layer is formed on one group of photosensitive diodes. The invention provides a CMOS process compatible ambient light sensor and a preparation method thereof, and provides a novel ambient light sensor. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. A CMOS process compatible ambient light sensor, comprising at least:
the light-sensitive diode array comprises a substrate, an epitaxial layer, two groups of light-sensitive diodes and a metal layer, wherein the epitaxial layer is positioned on the substrate, the two groups of light-sensitive diodes are distributed in the epitaxial layer at intervals, and the metal layer covers one group of light-sensitive diodes;
the distance between two groups of photodiodes distributed at intervals is less than the diffusion length of a photon-generated carrier.
2. The CMOS process compatible ambient light sensor of claim 1, wherein: the substrate is a P-type substrate, the epitaxial layer is a P-type epitaxial layer, the P region of the photodiode is the P-type epitaxial layer, and the N region of the photodiode is an N-type doped region.
3. The CMOS process compatible ambient light sensor of claim 1, wherein: the distance between two groups of photosensitive diodes which are distributed at intervals is 3-5 um.
4. A method for manufacturing an ambient light sensor compatible with a CMOS process at least comprises the following steps:
step S1: providing a substrate, and forming an epitaxial layer on the substrate;
step S2: doping in the epitaxial layer to form a photodiode, wherein the distance of each doping region for forming the photodiode is less than the diffusion length of a photon-generated carrier;
step S3: the photosensitive diodes are divided into two groups which are distributed at intervals, and a metal layer is formed on one group of photosensitive diodes.
5. The method of claim 4, wherein the method comprises: step S2 is compatible with the process of making wells in CMOS processes.
6. The method of claim 4, wherein the method comprises: step S3 is compatible with the process of preparing the bottom metal in a CMOS process.
7. The method of claim 4, wherein the method comprises: the substrate is a P-type substrate, the epitaxial layer is a P-type epitaxial layer, and N-type doping is carried out in the P-type epitaxial layer to form the photodiode.
8. The method of claim 4, wherein the method comprises: the distance between each doping region for forming the photosensitive diode is 3-5 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610274649.1A CN107331673B (en) | 2016-04-28 | 2016-04-28 | CMOS (complementary Metal oxide semiconductor) process compatible ambient light sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610274649.1A CN107331673B (en) | 2016-04-28 | 2016-04-28 | CMOS (complementary Metal oxide semiconductor) process compatible ambient light sensor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107331673A CN107331673A (en) | 2017-11-07 |
| CN107331673B true CN107331673B (en) | 2020-03-24 |
Family
ID=60192213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610274649.1A Active CN107331673B (en) | 2016-04-28 | 2016-04-28 | CMOS (complementary Metal oxide semiconductor) process compatible ambient light sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107331673B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101606245A (en) * | 2007-02-07 | 2009-12-16 | 夏普株式会社 | Light sensing system |
| CN101728402A (en) * | 2008-10-24 | 2010-06-09 | 欧姆龙株式会社 | Light sensor |
| CN102095495A (en) * | 2009-09-22 | 2011-06-15 | 英特赛尔美国股份有限公司 | Photodetector useful as ambient light sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7456384B2 (en) * | 2004-12-10 | 2008-11-25 | Sony Corporation | Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor |
-
2016
- 2016-04-28 CN CN201610274649.1A patent/CN107331673B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101606245A (en) * | 2007-02-07 | 2009-12-16 | 夏普株式会社 | Light sensing system |
| CN101728402A (en) * | 2008-10-24 | 2010-06-09 | 欧姆龙株式会社 | Light sensor |
| CN102095495A (en) * | 2009-09-22 | 2011-06-15 | 英特赛尔美国股份有限公司 | Photodetector useful as ambient light sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107331673A (en) | 2017-11-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100826407B1 (en) | Photo diode for sensing ultraviolet rays and image sensor comprising the same | |
| CN105374834B (en) | The method for making single-photon avalanche diode imaging sensor | |
| US11929382B2 (en) | Shallow trench textured regions and associated methods | |
| CN105321966B (en) | Visible light and infrared imaging sensor | |
| US8148762B2 (en) | Photodiodes, image sensing devices and image sensors | |
| US9202832B2 (en) | Integrated circuit arrangements | |
| CN102623467A (en) | Light sensor having IR cut and color pass interference filter integrated on-chip | |
| US20070114626A1 (en) | Photodiode device and photodiode array for optical sensor using the same | |
| CN102164250A (en) | Image sensor with improved black level calibration | |
| US10770505B2 (en) | Per-pixel performance improvement for combined visible and ultraviolet image sensor arrays | |
| JP6770296B2 (en) | CMOS image sensor | |
| TWI714826B (en) | Optical device | |
| CN107566764A (en) | The photoelectric door and its manufacture method of preceding illuminated infrared image sensor | |
| CN100477246C (en) | Image sensor and production method thereof | |
| KR101124744B1 (en) | Image sensor and method for manufacturign thesame | |
| US20200160026A1 (en) | Image sensor and associated handheld device | |
| CN107331673B (en) | CMOS (complementary Metal oxide semiconductor) process compatible ambient light sensor and preparation method thereof | |
| US7575941B2 (en) | Method of manufacturing photodiode | |
| CN112599621B (en) | Photoelectric conversion structure, preparation method thereof and display device | |
| CN110379864B (en) | Photodiode, manufacturing method thereof and array substrate | |
| EP3678194B1 (en) | Copper halide color optical sensor structure and manufacturing method therefor | |
| CN100399572C (en) | Distribution structure of complement metal oxide semiconductor image sensor | |
| US9882075B2 (en) | Light sensor with vertical diode junctions | |
| CN113690287B (en) | Display panel, preparation method thereof and display device | |
| TWI834219B (en) | Shallow trench textured regions and associated methods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |