JP6791208B2 - Manufacturing method of light emitting element - Google Patents

Description

The present invention relates to a method for manufacturing a light emitting element, and more particularly to a method for manufacturing a light emitting element that accurately bonds the light emitting element to a mounting substrate.

When mounting a micro LED or a mini LED, there is a manufacturing method in which the die is held on a tape and mounted on a mounting board. There is also a manufacturing method in which a circuit (light emitting element) is built in a substrate, mounted on a mounting substrate, and then the substrate is removed.

Japanese Unexamined Patent Publication No. 2008-311671

However, in the former case (holding the dice on the tape and mounting the dice on the mounting substrate), it is necessary to arrange the dice at an arbitrary pitch, but the accuracy of the dice pitch is poor in the conventional tape expanding method. The reason is that the tape used in the conventional tape expanding method consists of a holding tape base material and a glue for holding the die (see, for example, Patent Document 1), and the holding tape base material polypropylene (referred to as PP). This is because the ductility of polypropylene (sometimes referred to as PVC) and polyvinyl chloride (sometimes referred to as PVC) is excellent, but the ductility of the glue material for holding the die is poor.

Since the tape expanding method cannot arrange the dies at an arbitrary pitch according to the mounting board, the latter method (the circuit is built on the board, mounted on the mounting board, and then the board is removed) has a predetermined pitch. 1: 1 transfer is performed in which the element region between the dies is removed so that the pitch is aligned and mounted.

However, in this method, the area in the wafer that does not become a light emitting element becomes large, which increases the cost. In particular, when three types of RGB LEDs are separately mounted to form one pixel, the area loss becomes large. Therefore, there is a demand for a die mounting method with low wafer area loss and high accuracy.

The present invention has been made in view of the above problems, and provides a method for manufacturing a light emitting element capable of accurately arranging light emitting elements formed on a semiconductor wafer at an arbitrary pitch by a tape expanding method. With the goal.

In order to achieve the above object, the present invention comprises a division step of attaching a semiconductor wafer having a light emitting element formed on a substrate to a first tape and dividing the semiconductor wafer into a plurality of light emitting elements, and the first. In the expansion step of extending the distance between the light emitting elements of the plurality of light emitting elements by stretching the tape, and in the state where the distance between the light emitting elements of the plurality of light emitting elements is extended. A method for manufacturing a light emitting element, comprising a transfer step of transferring the plurality of light emitting elements from the first tape to a second tape and a mounting step of joining the plurality of light emitting elements to a mounting substrate, wherein the division thereof is performed. In the step, as the first tape, a tape composed of an elastic base material portion and a glue layer and the glue layer divided into islands is used, and the plurality of glue layers divided into islands are formed. Provided is a method for manufacturing a light emitting element, which comprises attaching a light emitting element.

In this way, the glue layer having low ductility of the first tape is cut, and by arranging it in an island shape on the base material portion having high ductility, the elongation of the base material portion is not hindered. , The pitch of the light emitting elements does not deviate significantly, and the light emitting elements can be arranged at an arbitrary pitch. As a result, the light emitting elements formed on the semiconductor wafer can be accurately arranged at an arbitrary pitch by the tape expanding method.

At this time, the light emitting element can be flip-chip bonded to the mounting substrate.

The present invention can be suitably applied when the light emitting element is flip-chip bonded to the mounting substrate.

At this time, it is preferable to use a tape whose base material is made of polyvinyl chloride (PVC) or polypropylene (PP) as the first tape.

If such a material having excellent ductility is used as the base material portion of the first tape, a tape having sufficient ductility can be obtained.

At this time, in the method of dividing the glue layer of the first tape into islands, the glue layer is cut by a blade or a laser, or the glue layer is formed on the base material by a printing method or a dispensing method. It is preferable to form a glue layer.

According to such a method, the glue layer can be divided into islands relatively easily.

As described above, according to the method for manufacturing a light emitting element of the present invention, the glue layer having low ductility of the first tape is cut and arranged in an island shape on the base material having high ductility. Since the elongation of the base material portion is not hindered, the pitch of the light emitting elements does not greatly deviate, and the light emitting elements can be arranged at an arbitrary pitch. As a result, the light emitting elements formed on the semiconductor wafer can be accurately arranged at an arbitrary pitch by the tape expanding method.

It is a flow figure which shows the manufacturing method of the light emitting element of this invention. It is a process sectional view which shows 1st Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view which shows 1st Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 3) which shows 1st Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 4) which shows 1st Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 5) which shows 1st Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 6) which shows 1st Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 7) which shows 1st Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 8) which shows 1st Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 9) which shows 1st Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 10) which shows the 1st Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view which shows the 2nd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view which shows the 2nd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 13) which shows the 2nd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 14) which shows the 2nd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 15) which shows the 2nd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 16) which shows the 2nd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 17) which shows the 2nd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 18) which shows the 2nd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 19) which shows the 2nd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 20) which shows the 2nd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view which shows the 3rd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view which shows the 3rd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 23) which shows the 3rd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 24) which shows the 3rd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 25) which shows the 3rd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 26) which shows the 3rd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 27) which shows the 3rd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 28) which shows the 3rd Embodiment of the manufacturing method of the light emitting element of this invention. It is a process sectional view (the figure following FIG. 29) which shows the 3rd Embodiment of the manufacturing method of the light emitting element of this invention. It is a figure which shows the example of the position defect (horizontal shift, vertical shift, rotation). It is a figure which shows the position defect rate of Examples 1 and 2 and the comparative example.

Hereinafter, the present invention will be described in detail with reference to the drawings as an example of an embodiment, but the present invention is not limited thereto.

First, the method for manufacturing the light emitting device of the present invention will be described with reference to FIG.
FIG. 1 is a flow chart showing a method for manufacturing a light emitting element of the present invention.

First, a semiconductor wafer having a light emitting element formed on a substrate is attached to a first tape composed of an elastic base material and an island-shaped glue layer, and the semiconductor wafer is formed into a plurality of light emitting elements. Divide (see S11 in FIG. 1).
At this time, it is preferable to use a tape whose base material is made of polyvinyl chloride (PVC) or polypropylene (PP) as the first tape. If such a material having excellent ductility is used as the base material portion of the first tape, a tape having sufficient ductility can be obtained.
Further, in the method of dividing the glue layer of the first tape into islands, the glue layer is cut by a blade or a laser, or an island-shaped glue layer is formed on the base material by a printing method or a dispensing method. Is preferable. According to such a method, the glue layer can be divided into islands relatively easily.

Next, by stretching the first tape, the distance between the light emitting elements of the plurality of light emitting elements is extended (see S12 in FIG. 1).
At this time, since the glue layer having low ductility of the first tape is cut and arranged in an island shape on the base material portion having high ductility, the elongation of the base material portion is not hindered. Therefore, the pitch of the light emitting elements does not deviate significantly, and the light emitting elements can be arranged at an arbitrary pitch. As a result, the light emitting elements formed on the semiconductor wafer can be accurately arranged at an arbitrary pitch by the tape expanding method.

Next, in S12, the plurality of light emitting elements having the extended distances between them are transferred from the first tape to the second tape (see S13 in FIG. 1).

Next, the plurality of light emitting elements transferred to the second tape in S13 are joined to the mounting substrate (see S14 in FIG. 1).
At this time, the light emitting element can be flip-chip bonded to the mounting substrate. The present invention can be suitably applied when the light emitting element is flip-chip bonded to the mounting substrate.

According to the method for manufacturing a light emitting device of the present invention described above, the glue layer having low ductility of the first tape is cut and arranged in an island shape on a base material having high ductility. Since the elongation of the base material portion is not hindered, the pitch of the light emitting elements does not greatly deviate, and the light emitting elements can be arranged at an arbitrary pitch. As a result, the light emitting elements formed on the semiconductor wafer can be accurately arranged at an arbitrary pitch by the tape expanding method.

(First Embodiment)
Next, the first embodiment of the method for manufacturing a light emitting device of the present invention will be described with reference to FIGS. 2 to 11.
2 to 11 show the first embodiment of the method for manufacturing a light emitting device of the present invention.

As shown in FIG. 2, for example, when forming a red or yellow LED, (Al _x Ga _1-x ) _y In by the organic metal vapor phase growth method (MOVPE) method on the starting substrate 201 in which GaAs or Ge is selected. _The active layer 204 composed of _1-y P (0 ≦ x ≦ 1,0.4 ≦ y ≦ 0.6) and _y In _1-y P having a larger bandgap than the active layer 204 (Al _x Ga _1-x ). (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6) An AlGaInP-based DH structure 206 in which the layers 203 and 205 are arranged on both sides of the active layer 204 is produced.

The method for producing the AlGaInP-based DH structure 206 is not limited to MOVPE, and may be produced by a molecular beam epitaxy (MBE) method or a chemical beam epitaxy (CBE) method.

Next, the first electrode 211 is formed in contact with a part of the first conductive layer 205 of the AlGaInP-based DH structure 206. When the first conductive type is P type, it is formed of a metal containing Zn and Be. It is preferable to select an AuZn alloy or an AuBe alloy, and a multilayer structure containing a refractory metal such as Ti, W, Cr, or Ni is preferable, but it is limited to these materials as long as it has ohmic properties. A metal layer containing Zn or Be in AuAg or PtAg, which are cheaper metals, may be selected.

When the first conductive type is N type, it is formed of a metal containing Si and Ge. It is preferable to select an AuGe alloy or an AuSi alloy, and a multilayer structure containing a refractory metal such as Ti, W, Cr, or Ni is preferable, but it is limited to these materials because it is sufficient if ohmic properties can be obtained. A metal layer containing Si or Ge in AuAg or PtAg, which are cheaper metals, may be selected.

Since the first electrode 211 only needs to have a thickness that can withstand the mounting process, there is no major restriction on the thinness, but since a film thickness sufficient to obtain ohmic contact is required, a film thickness of 50 nm or more is required. Just do it. Although the thickness of the first electrode 211 does not cause any defects in the mounting shape, it is preferable to form the first electrode 211 with a film thickness of 3 μm or less from the viewpoint of cost reduction.

A part of the first conductive type layer 205 and the active layer 204 is removed by a wet etching or dry etching method to expose the second conductive type layer 203. Etching can be performed with a gas or solution containing chlorine. Etching is not performed only on the above materials, but is performed by mixing other materials in order to control the etching rate and shape.

A second electrode 212 is provided in contact with the exposed region of the second conductive layer 203. When the second conductive type is P type, it is formed of a metal containing Zn and Be. It is preferable to select an AuZn alloy or an AuBe alloy, and a multilayer structure containing a refractory metal such as Ti, W, Cr, or Ni is preferable, but it is limited to these materials as long as it has ohmic properties. A metal layer containing Zn or Be in AuAg or PtAg, which are cheaper metals, may be selected.

When the second conductive type is N type, it is formed of a metal containing Si and Ge. It is preferable to select an AuGe alloy or an AuSi alloy, and a multilayer structure containing a refractory metal such as Ti, W, Cr, or Ni is preferable, but it is limited to these materials because it is sufficient if ohmic properties can be obtained. A metal layer containing Si or Ge in AuAg or PtAg, which are cheaper metals, may be selected.

Since the second electrode 212 only needs to have a thickness that can withstand the mounting process, there is no major restriction on the thinness, but since a film thickness that can obtain ohmic contact is required, a film thickness of 50 nm or more is required. Just do it. Although the thickness of the second electrode does not cause any mounting problems, it is preferable to form the second electrode with a film thickness of 3 μm or less from the viewpoint of cost reduction.

Also, for example, in the case of forming a blue or green LED, at metalorganic vapor phase epitaxy on a sapphire starting substrate 221 (MOVPE) _{method, Al x Ga y In z N} (0 ≦ x ≦ 1,0 ≦ y ≦ 1 , 0 ≦ z ≦ 1) and the active layer 224 made of, band gap than the active layer 224 greater _{Al x Ga y in z N (} 0 ≦ x ≦ 1,0 ≦ y ≦ 1,0 ≦ z ≦ 1) layer 223 , 225 are arranged on both sides of the active layer 224 to prepare an AlGaInN-based DH structure 226.

The method for producing the DH structure 226 is not limited to MOVPE, and may be produced by a molecular beam epitaxy (MBE) method or a chemical beam epitaxy (CBE) method.

The first electrode 231 is formed in contact with a part of the first conductive layer 225 of the AlGaInN-based DH structure 226. The first electrode 231 is made of a metal containing at least one Ni, Ti, Al, Au. It is not limited to these materials as long as it has ohmic properties.

Since the first electrode 231 only needs to have a thickness that can withstand the mounting process, there is no major restriction on the thinness, but since a film thickness that can obtain ohmic contact is required, a film thickness of 30 nm or more is required. Just do it. Although the thickness of the first electrode 231 does not cause any problems in the mounting state, it is preferable to form the first electrode 231 with a film thickness of 3 μm or less from the viewpoint of cost reduction.

A part of the first conductive type layer 225 and the active layer 224 is removed by a dry etching method to expose the second conductive type layer 223. Etching can be performed with a gas containing chlorine. Etching is not performed only on the above materials, but is performed by mixing other materials in order to control the etching rate and shape.

A second electrode 232 is provided in contact with the exposed region of the second conductive layer 223. The second electrode 232 is made of a metal containing at least one Ni, Ti, Al, Au. It is not limited to these materials as long as it has ohmic properties.

Since the second electrode 232 only needs to have a thickness that can withstand the mounting process, there is no major restriction on the thinness, but since a film thickness sufficient to obtain ohmic contact is required, a film thickness of 30 nm or more is required. Just do it. Although the thickness of the second electrode does not cause any mounting problems, it is preferable to form the second electrode with a film thickness of 3 μm or less from the viewpoint of cost reduction.

Next, as shown in FIG. 3, a tape 252 on which a paste material (glue layer) 251 such as acrylic is placed in a sheet shape on a ductile tape base material (base material portion) 250 such as PVC or PP is prepared. As shown in FIG. 4, the glue layer portion is cut into a ductile shape by blade dicing to obtain a sheet (first tape) 254 on which an island-shaped glue portion (glue layer divided into islands) 253 is formed.

Here, when the tape base material thickness is A and the glue layer thickness is B, the glue layer is surely cut and the tape layer is cut by cutting with the blade dicing height set to be about 10 μm deeper than B. It can be cut without giving excessive damage to (tape base material).

Since this method requires a cut groove having a processing width of about 15 μm by blade dicing, it is a method that can be applied to a die having a mounting element of 5 μm □ up to a small size of 20 μm pitch or more.

Next, as shown in FIG. 5, the wafer after forming the first electrodes 211 and 231 and the second electrodes 212 and 232 and the island-shaped glue portion (glue layer divided into islands) 253 cut into a grid shape are arranged. The sheet (first tape) 254 is arranged and joined so that the electrodes 211,212,231,232 and the island-shaped glue portion 253 face each other to form a bonded body 260. If a material transparent to visible light is selected for the sheet (first tape) 254, it is easy to align the die pattern with the island-shaped glue portion 253.

Next, as shown in FIG. 6, the wafer and the sheet (first tape) 254 are joined to form a bonded body 260, and then a braking line 261 is formed on the wafer by laser or diamond scribe. After forming the braking line 261, the wafer is braked along the braking line 261 to form the die 262. Here, a case where the braking wire 261 is formed after joining the wafer and the sheet (first tape) 254 to perform braking is illustrated, but the braking wire 261 is formed before joining and the brake is applied after joining. May be performed.

Next, as shown in FIG. 7, the distance between each of the plurality of dice 262 is expanded.

Next, as shown in FIG. 8, the starting boards 2011 and 221 are lifted off. When the starting substrate is an AlGaInP-based DH structure 206 which is a GaAs substrate 201, the starting substrate 201 is lifted off by etching the AlAs sacrificial layer 202 inserted between the starting substrate 201 and the DH layer 206 with a solution such as HF or BHF. (See FIG. 2).

When the starting substrate is an AlGaInN-based DH structure 226 which is a sapphire substrate 221, lift-off is performed by irradiating a laser to dissolve the GaN layer at the bottom of the DH layer 226.
It is not necessary to lift off or remove the substrate.

Next, after removing the starting substrates 2011 and 221, the tape is expanded so as to have a desired pitch to form a sheet 265 in which the dies are arranged at the desired pitch. At that time, if the tape is warmed in the range of 30 to 50 ° C. (preferably 35 to 45 ° C.) and then carried out, the uniformity during expansion is improved as compared with that at room temperature.

Next, as shown in FIG. 9, a second tape 275 having the glue layer 273 on the first surface 271 and the base material 274 on the second surface 272 is prepared, and the substrate lift-off surface 276 of the die and the glue layer are prepared. A sheet 280 in which the dies are transferred to the second tape 275 with the 273 facing each other, and the first electrodes 211 and 231 and the second electrodes 212 and 232 are arranged on the opposite sides of the first surface 271 as shown in FIG. To form.

Next, the mounting board 285 on which the drive circuit is formed is prepared. Then, as shown in FIG. 11, the electrodes 286, 287, 288, 289 on the mounting substrate 285, the first electrodes 211,231 and the second electrodes 212,232 are opposed to each other, and the mounting substrate 285 and the die are joined to join the bonded substrate. It is set to 290. The die and the mounting substrate 285 may be joined by forming the outermost surfaces of the first electrodes 211,231 and the second electrodes 212,232 and the mounting substrate 285 with Au and applying ultrasonic pressure. Alternatively, a conductive paste or eutectic metal may be formed on the mounting substrate electrode side or the die electrode side to realize bonding between the die and the mounting substrate 285 at a low temperature.

After forming the bonded substrate 290, the second tape 275 is peeled off.

In this embodiment, an example is given for the mounting process of an LED that emits visible light, but it is obvious that the emission wavelength of the light emitting element does not affect the mounting process, and the application is possible regardless of the emission wavelength of the present embodiment. It goes without saying that the light emitting element can be applied regardless of the emission wavelength, whether it is an infrared light emitting element or an ultraviolet light emitting element.

(Second embodiment)
Next, a second embodiment of the method for manufacturing a light emitting device of the present invention will be described with reference to FIGS. 12 to 21.
12 to 21 show a second embodiment of the method for manufacturing the light emitting device of the present invention.
The present embodiment is different from the first embodiment in that a laser is used as a method for dividing the glue layer of the first tape into islands, but other than that, it is the same as the first embodiment. Is.

As shown in FIG. 12, for example, when forming a red or yellow LED, GaAs or Ge is subjected to the metalorganic vapor phase growth method (MOVPE) method on the selected starting substrate 401 as in the first embodiment. The active layer 404 composed of (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1,0.4 ≦ y ≦ 0.6) and the band gap larger than that of the active layer 404 (Al _x Ga). _1-x ) _y In _1-y P (0 ≦ x ≦ 1,0.4 ≦ y ≦ 0.6) Layers 403 and 405 are arranged on both sides of the active layer 404 to prepare an AlGaInP-based DH structure 406.

Next, the first electrode 411 is formed in contact with a part of the first conductive layer 405 of the AlGaInP-based DH structure 406 in the same manner as in the first embodiment.

Next, in the same manner as in the first embodiment, a part of the first conductive type layer 405 and the active layer 404 is removed by a wet etching method or a dry etching method to expose the second conductive type layer 403.

A second electrode 412 in contact with the exposed region of the second conductive layer 403 is provided in the same manner as in the first embodiment.

Also, for example, in the case of forming a blue or green LED, as in the first embodiment, the metal organic vapor phase epitaxy on a sapphire starting substrate 421 at (MOVPE) _{method, Al x Ga y In z N} (0 ≦ x ≦ 1,0 ≦ y ≦ 1,0 ≦ z ≦ 1) and the active layer 424 made of, band gap than the active layer 424 greater _{Al x Ga y in z N (} 0 ≦ x ≦ 1,0 ≦ y ≦ 1 , 0 ≦ z ≦ 1) AlGaInN-based DH structure 426 in which layers 423 and 425 are arranged on both sides of the active layer 424 is prepared.

The first electrode 431 is formed in contact with a part of the first conductive layer 425 of the AlGaInN-based DH structure 426 in the same manner as in the first embodiment.

Next, in the same manner as in the first embodiment, a part of the first conductive layer 425 and the active layer 424 is removed by a dry etching method to expose the second conductive layer 423.

A second electrode 432 in contact with the exposed region of the second conductive layer 423 is provided in the same manner as in the first embodiment.

Next, as shown in FIG. 13, a tape 452 on which a paste material (glue layer) 451 such as acrylic is placed in a sheet shape on a ductile tape base material (base material portion) 450 such as PVC or PP is prepared. As shown in FIG. 14, the glue layer portion is cut into a ductile shape with a laser to obtain a sheet (first tape) 454 on which an island-shaped glue portion (glue layer divided into islands) 453 is formed. By controlling the laser output to a low output and cutting the glue layer portion, the glue layer portion can be cut in an island shape without giving excessive damage to the tape base material 450. In this method, since the processing width by the laser is about 5 μm, it is a method that can be applied to a die having a mounting element of about 5 μm □ up to a small size of 10 μm pitch or more.

Next, as shown in FIG. 15, in the same manner as in the first embodiment, the wafer after forming the first electrodes 411 and 431 and the second electrodes 421 and 432 and the island-shaped glue portion (island-shaped) cut into a grid shape. The sheet 454 on which the glue layer) 453 is arranged is arranged and joined so that the electrodes 411, 421, 431, 432 and the island-shaped glue portion 453 face each other to form a bonded body 460.

Next, as shown in FIG. 16, the wafer and the sheet are joined to form a bonded body 460, and then a braking line 461 is formed on the wafer by laser or diamond scribe. After forming the braking line 461, the wafer is braked along the braking line 461 to form the die 462. Here, the case where braking is performed after joining the wafer and the sheet is illustrated, but the braking line 461 may be formed before joining and braking may be performed after joining.

Next, as shown in FIG. 17, the distance between each of the plurality of dice is increased.

Next, as shown in FIG. 18, a braking process is performed to increase the distance between the dies, and then the starting boards 401 and 421 are lifted off in the same manner as in the first embodiment.
When the starting substrate is an AlGaInP-based DH structure 406 which is a GaAs substrate 401, the starting substrate 401 is lifted off by etching the AlAs sacrificial layer 402 inserted between the starting substrate 401 and the DH layer 406 with a solution such as HF or BHF. ..
It is not necessary to lift off or remove the substrate.

Next, after removing the starting substrates 401 and 421, the tape is expanded so as to have a desired pitch in the same manner as in the first embodiment to form a sheet 465 in which the dies are arranged at a desired pitch.

Next, as shown in FIG. 19, a tape (second tape) 475 having the glue layer 473 on the first surface 471 and the base material 474 on the second surface 472 was prepared, and the substrate lift-off surface 476 of the die was prepared. The die is transferred to the tape (second tape) 475 with the glue layer 473 facing each other, and the first electrode 411, 431 and the second electrode 421, 432 are on the opposite side of the first surface 471 as shown in FIG. Form a sheet 480 arranged in.

Next, the mounting board 485 on which the drive circuit is formed is prepared.

Then, as shown in FIG. 21, the electrodes 486, 487, 488, 489 on the mounting substrate 485, the first electrodes 411, 431 and the second electrodes 421, 432 are opposed to each other in the same manner as in the first embodiment. The mounting board and the die are joined to form a joined board 490.

After forming the bonded substrate 490, the tape (second tape) 475 is peeled off.

Although an example is given for the mounting process of an LED that emits visible light in this embodiment, it is obvious that the emission wavelength of the light emitting element does not affect the mounting process, and the application is possible regardless of the emission wavelength of this embodiment. It goes without saying that the light emitting element can be applied regardless of the emission wavelength, whether it is an infrared light emitting element or an ultraviolet light emitting element.

(Third embodiment)
Next, a third embodiment of the method for manufacturing a light emitting device of the present invention will be described with reference to FIGS. 22 to 30.
22 to 30 show a third embodiment of the method for manufacturing the light emitting device of the present invention.
In the present embodiment, as a method of dividing the glue layer of the first tape into islands, the first point is that an island-shaped glue layer is formed on the base material by a printing method or a dispensing method. However, other than that, it is the same as that of the first embodiment.

As shown in FIG. 22, for example, when forming a red or yellow LED, GaAs or Ge is formed on the starting substrate 601 selected by the organic metal vapor phase growth method (MOVPE) method as in the first embodiment. The active layer 604 composed of (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1,0.4 ≦ y ≦ 0.6) and the band gap larger than that of the active layer 604 (Al _x Ga). _1-x ) _y In _1-y P (0 ≦ x ≦ 1,0.4 ≦ y ≦ 0.6) Layers 603 and 605 are arranged on both sides of the active layer 604 to prepare an AlGaInP-based DH structure 606.

Next, the first electrode 611 is formed in contact with a part of the first conductive layer 605 of the AlGaInP-based DH structure 606 in the same manner as in the first embodiment.

Next, in the same manner as in the first embodiment, a part of the first conductive layer 605 and the active layer 604 is removed by a wet etching method or a dry etching method to expose the second conductive layer 603.

Next, the second electrode 612 in contact with the exposed region of the second conductive layer 603 is provided in the same manner as in the first embodiment.

For example, in the case of forming a blue or green LED, as in the first embodiment, the metal organic vapor phase epitaxy on a sapphire starting substrate 621 at (MOVPE) _{method, Al x Ga y In z N} (0 ≦ x ≦ 1,0 ≦ y ≦ 1,0 ≦ z ≦ 1) and the active layer 624 made of, large _Al x _Ga band gap than the active layer _{624 y in z N (0 ≦} x ≦ 1,0 ≦ y ≦ 1,0 ≦ z ≦ 1) An AlGaInN-based DH structure 626 in which layers 623 and 625 are arranged on both sides of the active layer 624 is produced.

Next, the first electrode 631 is formed in contact with a part of the first conductive layer 625 of the AlGaInN-based DH structure 626 in the same manner as in the first embodiment.

Next, a part of the first conductive layer 625 and the active layer 624 is removed by a dry etching method in the same manner as in the first embodiment to expose the second conductive layer 623.

Next, the second electrode 632 in contact with the exposed region of the second conductive layer 623 is provided in the same manner as in the first embodiment.

Next, as shown in FIG. 23, an island-shaped glue portion (island-shaped) is ejected from a discharge nozzle in an island shape on a ductile tape base material (base material portion) 650 such as PVC or PP. A sheet (first tape) 654 on which the divided glue layer) 653 is formed is prepared. This method depends on the printing accuracy of the head by the printing method or the dispense method, but since it is possible to install glue portions in an island shape at intervals of about 5 μm, a die of about 5 μm □ has a pitch of 10 μm or more. This method is applicable to small sizes.

Next, as shown in FIG. 24, in the same manner as in the first embodiment, the wafer after forming the first electrode 611, 631 and the second electrode 612, 632 and the grid-shaped island-shaped glue portion (divided into islands). The sheet 654 on which the glue layer) 653 is arranged is arranged and joined so that the electrodes 611, 612, 631, 632 and the island-shaped glue portion 653 face each other to form a bonded body 660.

Next, as shown in FIG. 25, the wafer and the sheet are joined to form a bonded body 660, and then a braking line 661 is formed on the wafer by laser or diamond scribe. After forming the braking line 661, the wafer is braked along the braking line 661 to form the die 662. Here, the case where braking is performed after joining the wafer and the sheet is illustrated, but the braking line 661 may be formed before joining and braking may be performed after joining.

Next, as shown in FIG. 26, the distance between each of the plurality of dice is increased.

Next, a braking process is performed as shown in FIG. 27 to increase the distance between the dies, and then the starting boards 601, 621 are lifted off in the same manner as in the first embodiment.
In the case of the AlGaInP-based DH structure 606 in which the starting substrate is a GaAs substrate 601, the starting substrate 601 is lifted off by etching the AlAs sacrificial layer 602 inserted between the starting substrate 601 and the DH layer 606 with a solution such as HF or BHF. ..
It is not necessary to lift off or remove the substrate.

Next, after removing the starting substrates 601, 621, the tape is expanded so as to have a desired pitch in the same manner as in the first embodiment to form a sheet 665 in which the dies are arranged at a desired pitch.

Next, as shown in FIG. 28, a tape (second tape) 675 having the glue layer 673 on the first surface 671 and the base material 674 on the second surface 672 was prepared, and the substrate lift-off surface 676 of the die was prepared. The die is transferred to the tape (second tape) 675 with the glue layer 673 facing each other, and the first electrode 611, 631 and the second electrode 612, 632 are on the opposite sides of the first surface 671 as shown in FIG. Form a sheet 680 arranged in.

Next, the mounting board 685 on which the drive circuit is formed is prepared.

Then, as shown in FIG. 30, the electrodes 686, 687, 688, 689 on the mounting substrate 685 are opposed to the first electrodes 611, 631 and the second electrodes 612, 632 in the same manner as in the first embodiment. The mounting board 685 and the die are joined to form a joined board 690.

After forming the bonded substrate 690, the tape (second tape) 675 is peeled off.

Although an example is given for the mounting process of an LED that emits visible light in this embodiment, it is obvious that the emission wavelength of the light emitting element does not affect the mounting process, and the application is possible regardless of the emission wavelength of this embodiment. It goes without saying that the light emitting element can be applied regardless of the emission wavelength, whether it is an infrared light emitting element or an ultraviolet light emitting element.

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited thereto.

(Example 1)
(Al _x Ga _1-x ) _y In _1-y P (yellow: y = 0.5, x = 0.15, red: y) on the GaAs substrate 201 by the organic metal vapor phase growth method (MOVPE) method. The active layer 204 composed of = 0.5, x- = 0.05) and the bandgap larger than the active layer 204 (Al _x Ga _1-x ) _y In _1-y P (x = 0.85, y =) 0.5) An AlGaInP-based DH structure 206 in which layers 203 and 205 were arranged on both sides of the active layer 204 was prepared. At that time, an AlAs sacrificial layer 202 was formed between the AlGaInP-based DH structure 206 and the starting substrate 201 with a thickness of 50 nm (see FIG. 2).

A PVC having an island-shaped portion 253 formed by processing a semiconductor wafer having such a structure as in the first embodiment and cutting the glue layer portion into a grid shape by blade dicing is used as a base material (base material portion). The sheet (first tape) 254 (see FIG. 4) was used to bond dices of 5 to 10 μm square to the mounting substrate at a pitch of 35 to 100 μm. The thickness of the base material (base material portion) of the sheet (first tape) is 80 μm, the thickness of the glue portion (glue layer) is 5 μm, and the glue portion is cut into islands at a pitch of 20 to 50 μm with a blade having a width of 15 μm. did.

(Example 2)
(Al _x Ga _1-x ) _y In _1-y P (yellow: y = 0.5, x = 0.15, red: y) on a GaAs substrate 401 by the organic metal vapor phase growth method (MOVPE) method. An active layer 404 composed of = 0.5, x− = 0.05) and a bandgap larger than that of the active layer 404 (Al _x Ga _1-x ) _y In _1-y P (x = 0.85, y =) 0.5) An AlGaInP-based DH structure 406 in which layers 403 and 405 were arranged on both sides of the active layer 404 was prepared. At that time, an AlAs sacrificial layer 402 was formed between the AlGaInP-based DH structure 406 and the starting substrate 401 with a thickness of 50 nm (see FIG. 12).

A PVC-based sheet (first) in which a semiconductor wafer having such a structure is processed as in the second embodiment, and an island-shaped portion 453 is formed by cutting the glue layer portion into a grid shape by a laser. Using tape) 454 (see FIG. 14), dies of 5 to 10 μm square were bonded to the mounting substrate at a pitch of 35 to 100 μm. The thickness of the base material (base material portion) of the sheet (first tape) was 80 μm, the thickness of the glue portion (glue layer) was 5 μm, and the glue portion was cut into islands at a pitch of 20 to 50 μm using a laser. ..

(Comparison example)
The light emitting element was mounted in the same manner as in Examples 1 and 2 except that the glue portion (glue layer) of the sheet (first tape) was not island-shaped and the die pitch was 15 to 100 μm.

The results of the position defect rate of Examples 1 and 2 and Comparative Example are shown in FIG. As shown in FIG. 31, there are three types of position defects: lateral displacement, vertical displacement, and rotation.
As can be seen from FIG. 32, in Examples 1 and 2 using the first tape in which the glue layer is divided into islands, as compared with the comparative example in which the first tape in which the glue layer is not divided into islands is used. , The position defect at the time of mounting is greatly improved.

The present invention is not limited to the above embodiment. The above embodiment is an example, and any one having substantially the same configuration as the technical idea described in the claims of the present invention and exhibiting the same effect and effect is the present invention. It is included in the technical scope of the invention.

201, 401, 601 ... Departure substrate (GaAs substrate),
221, 421, 621 ... Departure board (sapphire board, sapphire departure board),
202, 402, 602 ... AlAs sacrificial layer,
203, 223, 403, 423, 603, 623 ... Second conductive layer,
204, 224, 404, 424, 604, 624 ... active layer,
205, 225, 405, 425, 605, 625 ... First conductive layer,
206, 406, 606 ... AlGaInP system DH structure,
226, 426, 426 ... AlGaInN-based DH structure,
211, 231, 411, 431, 611, 631 ... First electrode,
212, 232, 412, 432, 612, 632 ... Second electrode,
250, 450, 650 ... Tape base material (base material part), 251, 451 ... Glue material (glue layer),
252, 452 ... tape,
253, 453, 653 ... Island-shaped glue portion (island-shaped glue layer)
254, 454, 654 ... Sheet (first tape),
260, 460, 660 ... Joins, 261, 461, 661 ... Braking lines,
262, 462, 662 ... Dice, 265, 465, 665 ... Sheets,
271, 471, 671 ... first surface, 272, 472, 672 ... second surface,
273, 473, 673 ... glue layer, 274, 474, 674 ... base material,
275, 475, 675 ... Second tape,
276, 476, 676 ... Substrate lift-off surface, 280, 480, 680 ... Sheet,
285, 485, 685 ... Mounting board,
286, 287, 288, 289 ... Electrodes, 486, 487, 488, 489 ... Electrodes,
686, 687, 688, 689 ... Electrodes,
290, 490, 690 ... Bonded substrate.

Claims (3)

A semiconductor wafer having a light emitting element formed on a substrate is attached to a first tape, and the semiconductor wafer is divided into a plurality of light emitting elements, and the first tape is stretched to emit light. In the expansion step of expanding the distance between each light emitting element of the element and the state where the distance between each light emitting element of the plurality of light emitting elements is expanded, the plurality of light emitting elements are attached to the first tape. A method for manufacturing a light emitting element, which includes a transfer step of transferring from to a second tape and a mounting step of joining the plurality of light emitting elements to a mounting substrate.
In the dividing step, the first tape is composed of an elastic base material portion and a glue layer, and the glue layer is divided into islands, and the glue layer is divided into islands. Paste multiple light emitting elements,
How to divide the glue layer of the first tape into an island shape is to form an island-shaped glue layer by a dispensing method over the prior Kimotozai portion,
A method for manufacturing a light emitting element, which comprises warming the first tape in the range of 30 to 50 ° C. and then stretching the first tape in the expansion step . The method for manufacturing a light emitting element according to claim 1, wherein the light emitting element is flip-chip bonded to the mounting substrate. The method for manufacturing a light emitting device according to claim 1 or 2, wherein as the first tape, a tape whose base material is made of polyvinyl chloride (PVC) or polypropylene (PP) is used.

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