JP2019204842A - Method for manufacturing light-emitting element - Google Patents

Abstract

To provide a method for manufacturing a light-emitting element, by which light-emitting elements fabricated in a semiconductor wafer can be arranged at any pitches with high accuracy by a tape expand process.SOLUTION: The method for manufacturing a light-emitting element includes: a division step of sticking a semiconductor wafer having light-emitting elements fabricated on a substrate to a first tape and dividing the semiconductor wafer into a plurality o f light-emitting elements; an expansion step of stretching the first tape so as to expand an interval between individual light-emitting elements of the plurality of light-emitting elements; and a transfer step of transferring the plurality of light-emitting elements in an expanded interval state between individual light-emitting elements of the plurality of light-emitting elements, from the first tape to a second tape; and an implementation step of joining the plurality of light-emitting elements to an implementation substrate. In the division step, a tape comprising a stretchable base part and a glue layer in which the glue layer is divided into island-like regions is used as the first tape, and the plurality of light-emitting elements is stuck to the glue layer divided into island-like regions.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method for manufacturing a light emitting element, and more particularly to a method for manufacturing a light emitting element in which the light emitting element is bonded to a mounting substrate with high accuracy.

  There is a manufacturing method for mounting a micro LED or a mini LED on a mounting substrate by holding a die on a tape. There is also a manufacturing method in which a circuit (light emitting element) is formed on a substrate and then mounted on a mounting substrate, and then the substrate is removed.

JP 2008-311671 A

  However, in the former case (the die is held on the tape and mounted on the mounting substrate), it is necessary to dispose the die at an arbitrary pitch, but the conventional tape expanding method has a poor die pitch accuracy. The reason is that the tape used in the conventional tape expanding method is composed of a holding tape base material and a glue for holding the dice (see, for example, Patent Document 1), and polypropylene (PP is referred to as PP) of the holding tape base material. This is because the ductility of the paste material for holding the dice was poor, although the ductility of the polyvinyl chloride (sometimes referred to as PVC) is excellent.

  In the tape expanding method, dice cannot be placed at any pitch according to the mounting board. Therefore, the latter method (removing the board after mounting the circuit on the board after mounting the circuit on the board) has an arbitrary pitch in advance. Thus, 1: 1 transfer is performed in which the element region between the dies is removed and the pitches are aligned.

  However, this method increases the area that does not become a light emitting element in the wafer, which increases costs. In particular, when one pixel is formed by separately mounting three types of RGB LEDs, the area loss increases. Accordingly, there is a need for a die mounting method that has a small area loss of the wafer and is highly accurate.

  The present invention has been made in view of the above problems, and provides a method for manufacturing a light-emitting element capable of accurately arranging light-emitting elements formed on a semiconductor wafer at an arbitrary pitch by a tape expanding method. With the goal.

  In order to achieve the above object, the present invention includes a dividing step of attaching a semiconductor wafer having a light emitting element formed on a substrate to a first tape, and dividing the semiconductor wafer into a plurality of light emitting elements, In the state in which the distance between the light emitting elements of the plurality of light emitting elements is expanded by extending the tape, the expansion step of extending the distance between the light emitting elements of the plurality of light emitting elements, A method for manufacturing a light-emitting element, comprising: a transfer step of transferring the plurality of light-emitting elements from the first tape to a second tape; and a mounting step of bonding the plurality of light-emitting elements to a mounting substrate. In the step, the first tape is made of a stretchable base material portion and a glue layer, and the glue layer is divided into islands, and the plurality of glue layers divided into islands are used as the first tape. Paste light emitting element Takes to provide a method of manufacturing a light emitting device, characterized in that.

  Thus, since the paste layer with low ductility of the first tape is cut, and it is arranged in an island shape on the base portion with high ductility, it does not hinder the elongation of the base portion. The pitch of the light emitting elements is not greatly changed, and the light emitting elements can be arranged at an arbitrary pitch. Thereby, the light emitting element formed in the semiconductor wafer can be accurately arranged at an arbitrary pitch by the tape expanding method.

  At this time, the light emitting element can be flip-chip bonded to the mounting substrate.

  The present invention can be suitably applied when the light emitting element is flip-chip bonded to a mounting substrate.

  At this time, as the first tape, it is preferable that the base material portion is made of polyvinyl chloride (PVC) or polypropylene (PP).

  If a material having such excellent ductility is used as the base portion of the first tape, a sufficiently ductile tape can be obtained.

  At this time, the method of dividing the glue layer of the first tape into islands is to cut the glue layer with a blade or a laser, or to form islands by printing or dispensing on the base part. It is preferable to form a glue layer.

  According to such a method, the glue layer can be divided into islands relatively easily.

  As mentioned above, according to the manufacturing method of the light emitting element of this invention, the paste layer with low ductility of the 1st tape is cut, and it arrange | positions in island shape on the base material part with high ductility. Since the elongation of the base material portion is not hindered, the pitch of the light emitting elements is not greatly changed, and the light emitting elements can be arranged at an arbitrary pitch. Thereby, the light emitting element formed in the semiconductor wafer can be accurately arranged at an arbitrary pitch by the tape expanding method.

It is a flowchart which shows the manufacturing method of the light emitting element of this invention. It is process sectional drawing which shows 1st embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing which shows 1st embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 3) which shows 1st embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 4) which shows 1st embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 5) which shows 1st embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 6) which shows 1st embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 7) which shows 1st embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 8) which shows 1st embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 9) which shows 1st embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 10) which shows 1st embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing which shows 2nd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing which shows 2nd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 13) which shows 2nd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 14) which shows 2nd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 15) which shows 2nd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 16) which shows 2nd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 17) which shows 2nd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 18) which shows 2nd embodiment of the manufacturing method of the light emitting element of this invention. FIG. 20 is a process cross-sectional view (figure following FIG. 19) showing a second embodiment of the method for manufacturing a light-emitting element of the present invention. It is process sectional drawing (figure following FIG. 20) which shows 2nd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing which shows 3rd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing which shows 3rd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 23) which shows 3rd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 24) which shows 3rd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 25) which shows 3rd embodiment of the manufacturing method of the light emitting element of this invention. FIG. 27 is a process cross-sectional view (following FIG. 26) showing the third embodiment of the method for manufacturing a light-emitting element of the present invention. It is process sectional drawing (figure following FIG. 27) which shows 3rd embodiment of the manufacturing method of the light emitting element of this invention. It is process sectional drawing (figure following FIG. 28) which shows 3rd embodiment of the manufacturing method of the light emitting element of this invention. FIG. 30 is a process cross-sectional view (following FIG. 29) showing the third embodiment of the method for manufacturing a light-emitting device of the present invention. It is a figure which shows the example (lateral deviation, vertical deviation, rotation) of a position defect. It is a figure which shows the position defect rate of Examples 1, 2 and a comparative example.

  Hereinafter, the present invention will be described in detail as an example of an embodiment with reference to the drawings, but the present invention is not limited thereto.

First, the manufacturing method of the light emitting element of this invention is demonstrated, referring FIG.
FIG. 1 is a flowchart showing a method for manufacturing a light emitting device of the present invention.

First, a semiconductor wafer having a light emitting element formed on a substrate is attached to a first tape composed of a stretchable base material part and an adhesive layer divided into islands, and the semiconductor wafer is formed into a plurality of light emitting elements. Divide (see S11 in FIG. 1).
At this time, as the first tape, it is preferable to use a base portion made of polyvinyl chloride (PVC) or polypropylene (PP). If a material having such excellent ductility is used as the base portion of the first tape, a sufficiently ductile tape can be obtained.
Further, the method of dividing the adhesive layer of the first tape into islands is to cut the adhesive layer with a blade or a laser, or to form an island-like adhesive layer on the substrate by printing or dispensing. It is preferable. According to such a method, the glue layer can be divided into islands relatively easily.

Next, the distance between the light emitting elements of the plurality of light emitting elements is extended by stretching the first tape (see S12 in FIG. 1).
At this time, the paste layer with low ductility of the first tape is cut, and is arranged in an island shape on the base portion with high ductility, so that the elongation of the base portion is not hindered. Therefore, the pitch of the light emitting elements is not greatly changed, and the light emitting elements can be arranged at an arbitrary pitch. Thereby, the light emitting element formed in the semiconductor wafer can be accurately arranged at an arbitrary pitch by the tape expanding method.

  Next, the plurality of light emitting elements whose distances are expanded in S12 are transferred from the first tape to the second tape (see S13 in FIG. 1).

Next, the plurality of light emitting elements transferred to the second tape in S13 are bonded to the mounting substrate (see S14 in FIG. 1).
At this time, the light emitting element can be flip-chip bonded to the mounting substrate. The present invention can be suitably applied when the light emitting element is flip-chip bonded to the mounting substrate.

  According to the method for manufacturing a light emitting device of the present invention described above, the paste layer having low ductility of the first tape is cut, and arranged on the base portion having high ductility in an island shape. Since the elongation of the base material portion is not hindered, the pitch of the light emitting elements is not greatly changed, and the light emitting elements can be arranged at an arbitrary pitch. Thereby, the light emitting element formed in the semiconductor wafer can be accurately arranged at an arbitrary pitch by the tape expanding method.

(First embodiment)
Next, a first embodiment of the method for manufacturing a light emitting device of the present invention will be described with reference to FIGS.
2-11 shows 1st embodiment of the manufacturing method of the light emitting element of this invention.

For example, when a red or yellow LED is formed as shown in FIG. 2, (Al _x Ga _1-x ) _y In is formed by metal organic vapor phase epitaxy (MOVPE) on a starting substrate 201 selected from GaAs or Ge. _1-y P (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6), and (Al _x Ga _1-x ) _y In _1-y P having a larger band gap than the active layer 204 An AlGaInP-based DH structure 206 in which (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6) layers 203 and 205 are arranged on both sides of the active layer 204 is produced.

  The production method of the AlGaInP-based DH structure 206 is not limited to MOVPE, and may be produced by a molecular beam epitaxy (MBE) method or a chemical beam epitaxy (CBE) method.

  Next, a first electrode 211 is formed in contact with a part of the first conductivity type layer 205 of the AlGaInP-based DH structure 206. When the first conductivity type is P type, it is formed of a metal containing Zn and Be. It is preferable to select an AuZn alloy or an AuBe alloy, and a multilayer structure including a refractory metal such as Ti, W, Cr, or Ni is preferable. However, the material is limited to these materials because it only needs to have ohmic properties. Instead, a metal layer containing Zn or Be in AuAg or PtAg, which is a cheaper metal, may be selected.

  When the first conductivity type is N type, it is formed of a metal containing Si and Ge. It is preferable to select an AuGe alloy or an AuSi alloy, and a multilayer structure including a refractory metal such as Ti, W, Cr, or Ni is preferable, but it is limited to these materials as long as ohmic properties can be taken. Instead, a metal layer containing Si or Ge in AuAg or PtAg, which is a cheaper metal, may be selected.

  Since the first electrode 211 only needs to have a thickness that can withstand the mounting process, there is no major limitation on the thickness. However, the first electrode 211 needs to be thick enough to obtain an ohmic contact, and therefore has a thickness of 50 nm or more. It ’s fine. Since the first electrode 211 is thick, no mounting defect occurs, but it is preferable to form the film with a thickness of 3 μm or less from the viewpoint of cost reduction.

  A part of the first conductivity type layer 205 and the active layer 204 is removed by wet etching or dry etching, and the second conductivity type layer 203 is exposed. Etching can be performed with a gas or solution containing chlorine. Etching is not performed only with the above materials, but is performed by mixing other materials in order to control the etching rate and shape.

  A second electrode 212 is provided in contact with the region where the second conductivity type layer 203 is exposed. When the second conductivity type is P-type, it is formed of a metal containing Zn and Be. It is preferable to select an AuZn alloy or an AuBe alloy, and a multilayer structure including a refractory metal such as Ti, W, Cr, or Ni is preferable. However, the material is limited to these materials because it only needs to have ohmic properties. Instead, a metal layer containing Zn or Be in AuAg or PtAg, which is a cheaper metal, may be selected.

  When the second conductivity type is N type, it is formed of a metal containing Si and Ge. It is preferable to select an AuGe alloy or an AuSi alloy, and a multilayer structure including a refractory metal such as Ti, W, Cr, or Ni is preferable, but it is limited to these materials as long as ohmic properties can be taken. Instead, a metal layer containing Si or Ge in AuAg or PtAg, which is a cheaper metal, may be selected.

  Since the second electrode 212 only needs to have a thickness that can withstand the mounting process, there is no major limitation on the thickness. However, the second electrode 212 needs to be thick enough to obtain an ohmic contact. It ’s fine. Although the mounting electrode does not cause a problem in mounting because the second electrode is thick, it is preferable to form the film with a film thickness of 3 μm or less from the viewpoint of cost reduction.

For example, when forming a blue or green LED, an Al _x Ga _y In _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) is formed on the sapphire starting substrate 221 by a metal organic vapor phase epitaxy (MOVPE) method. , 0 ≦ z ≦ 1), and an Al _x Ga _y In _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1) layer 223 having a band gap larger than that of the active layer 224. , 225 are arranged on both sides of the active layer 224, and an AlGaInN DH structure 226 is produced.

  The manufacturing method of the DH structure 226 is not limited to MOVPE, and may be manufactured by a molecular beam epitaxy (MBE) method or a chemical beam epitaxy (CBE) method.

  A first electrode 231 is formed in contact with a part of the first conductivity type layer 225 of the AlGaInN-based DH structure 226. The first electrode 231 is formed of a metal containing one or more kinds of Ni, Ti, Al, and Au. The material is not limited to these materials because it only needs to have ohmic properties.

  Since the first electrode 231 only needs to have a thickness that can withstand the mounting process, there is no major limitation on the thickness, but a film thickness sufficient to obtain an ohmic contact is necessary. It ’s fine. Since the first electrode 231 is thick, a mounting defect does not occur, but it is preferable to form the film with a thickness of 3 μm or less from the viewpoint of cost reduction.

  Part of the first conductivity type layer 225 and the active layer 224 is removed by a dry etching method to expose the second conductivity type layer 223. Etching can be performed with a gas containing chlorine. Etching is not performed only with the above materials, but is performed by mixing other materials in order to control the etching rate and shape.

  A second electrode 232 in contact with the region where the second conductivity type layer 223 is exposed is provided. The second electrode 232 is formed of a metal containing one or more kinds of Ni, Ti, Al, and Au. The material is not limited to these materials because it only needs to have ohmic properties.

  Since the second electrode 232 only needs to have a thickness that can withstand the mounting process, there is no major limitation on the thickness, but a film thickness sufficient to obtain an ohmic contact is necessary, and therefore the second electrode 232 has a film thickness of 30 nm or more. It ’s fine. Although the mounting electrode does not cause a problem in mounting because the second electrode is thick, it is preferable to form the film with a film thickness of 3 μm or less from the viewpoint of cost reduction.

  Next, as shown in FIG. 3, a tape 252 is prepared in which a paste material (glue layer) 251 such as acrylic is placed in a sheet form on a ductile tape base material (base material portion) 250 such as PVC or PP, As shown in FIG. 4, the glue layer portion is cut into a cross pattern by blade dicing to form a sheet (first tape) 254 on which island-like glue portions (glue layers divided into islands) 253 are formed.

  Here, when the tape base material thickness is A and the glue layer thickness is B, by cutting the blade dicing height about 10 μm deeper than B, the glue layer is surely cut, and the tape layer It can cut without giving excessive damage to (tape base material).

  Since this method requires a cut groove with a processing width of about 15 μm by blade dicing, it can be applied to a small size of 20 μm pitch or more in a die having a mounting element of 5 μm □.

  Next, as shown in FIG. 5, the wafers after the formation of the first electrodes 211 and 231 and the second electrodes 212 and 232 and island-like paste portions (glue layers divided into island shapes) 253 cut in a cross-beam shape are arranged. The sheet (first tape) 254 is placed and bonded so that the electrodes 211, 212, 231, 232 and the island-shaped paste portion 253 are opposed to each other, and a bonded body 260 is obtained. If a material transparent to visible light is selected for the sheet (first tape) 254, it is easy to align the dice pattern and the island-shaped paste portion 253.

  Next, as shown in FIG. 6, the wafer and the sheet (first tape) 254 are bonded to form a bonded body 260, and then a breaking line 261 is formed on the wafer by laser or diamond scribe. After forming the breaking line 261, the wafer is braked along the breaking line 261 to form a die 262. Here, a case where the braking line 261 is formed after the wafer and the sheet (first tape) 254 are joined and braking is illustrated is illustrated. However, the braking line 261 is formed before joining and the braking is performed after joining. May be performed.

  Next, as shown in FIG. 7, the distance between each of the dice 262 is expanded.

  Next, as shown in FIG. 8, the starting substrates 201 and 221 are lifted off. In the case of the AlGaInP-based DH structure 206 in which the starting substrate is a GaAs substrate 201, the starting substrate 201 is lifted off by etching the AlAs sacrificial layer 202 inserted between the starting substrate 201 and the DH layer 206 with a solution such as HF or BHF. (See FIG. 2).

In the case of the AlGaInN-based DH structure 226 whose starting substrate is the sapphire substrate 221, lift-off is performed by irradiating a laser to dissolve the GaN layer at the bottom of the DH layer 226.
Note that the substrate need not be lifted off or removed.

  Next, after the starting substrates 201 and 221 are removed, the tape is expanded to a desired pitch, and a sheet 265 in which dies are arranged at a desired pitch is formed. In that case, if it is carried out after warming the tape in the range of 30 to 50 ° C. (preferably 35 to 45 ° C.), the uniformity during expansion is improved from that at room temperature.

  Next, as shown in FIG. 9, a second tape 275 having a glue layer 273 on the first surface 271 and a base material 274 on the second surface 272 is prepared, and the substrate lift-off surface 276 of the die and the glue layer are prepared. The sheet 280 has the first electrode 211, 231 and the second electrode 212, 232 disposed on the opposite side of the first surface 271 as shown in FIG. Form.

  Next, a mounting substrate 285 on which a drive circuit is formed is prepared. Then, as shown in FIG. 11, the electrodes 286, 287, 288, 289 on the mounting substrate 285 are opposed to the first electrodes 211, 231 and the second electrodes 212, 232, the mounting substrate 285 and the die are bonded, and the bonding substrate 290. The die and the mounting substrate 285 may be joined by forming the first electrodes 211 and 231 and the second electrodes 212 and 232 and the outermost surfaces of the electrodes of the mounting substrate 285 with Au, and joining them by ultrasonic wave application pressure bonding. Alternatively, a conductive paste or eutectic metal may be formed on the mounting substrate electrode side or the die electrode side, and bonding of the die and the mounting substrate 285 may be realized at a low temperature.

  After the bonding substrate 290 is formed, the second tape 275 is peeled off.

  In the present embodiment, the mounting process of the LED that emits visible light is illustrated, but it is obvious that the light emission wavelength of the light emitting element does not affect the mounting process, and can be applied regardless of the light emission wavelength of the present embodiment. Needless to say, it is applicable regardless of the emission wavelength, whether the light emitting element is an infrared light emitting element or an ultraviolet light emitting element.

(Second embodiment)
Next, a second embodiment of the method for manufacturing a light emitting device of the present invention will be described with reference to FIGS.
12 to 21 show a second embodiment of the method for producing a light emitting device of the present invention.
In this embodiment, the laser is used as a method for dividing the adhesive layer of the first tape into islands, but the same as in the first embodiment except for the point that the laser is used. It is.

For example, when forming a red or yellow LED as shown in FIG. 12, as in the first embodiment, GaAs or Ge is formed on a selected starting substrate 401 by a metal organic vapor phase epitaxy (MOVPE) method. An active layer 404 made of (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6) and a band gap larger than that of the active layer 404 (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6) AlGaInP-based DH structure 406 in which layers 403 and 405 are arranged on both sides of active layer 404 is fabricated.

  Next, a first electrode 411 is formed in contact with a part of the first conductivity type layer 405 of the AlGaInP-based DH structure 406 as in the first embodiment.

  Next, as in the first embodiment, the first conductivity type layer 405 and a part of the active layer 404 are removed by wet etching or dry etching to expose the second conductivity type layer 403.

  The second electrode 412 in contact with the region where the second conductivity type layer 403 is exposed is provided in the same manner as in the first embodiment.

Also, for example, in the case of forming a blue or green LED, as in the first embodiment, the metal organic vapor phase epitaxy on a sapphire starting substrate 421 at (MOVPE) _{method, Al x Ga y In z N} (0 ≦ active layer 424 composed of x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1), and Al _x Ga _y In _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) having a larger band gap than the active layer 424 , 0 ≦ z ≦ 1) An AlGaInN-based DH structure 426 in which the layers 423 and 425 are arranged on both sides of the active layer 424 is manufactured.

  A first electrode 431 is formed in the same manner as in the first embodiment in contact with a part of the first conductivity type layer 425 of the AlGaInN-based DH structure 426.

  Next, as in the first embodiment, a part of the first conductivity type layer 425 and the active layer 424 is removed by a dry etching method to expose the second conductivity type layer 423.

  A second electrode 432 in contact with the region where the second conductivity type layer 423 is exposed is provided in the same manner as in the first embodiment.

  Next, as shown in FIG. 13, a tape 452 is prepared in which a paste material (glue layer) 451 such as acrylic is placed in a sheet form on a ductile tape base material (base material portion) 450 such as PVC or PP, As shown in FIG. 14, the glue layer portion is cut into a cross pattern with a laser to form a sheet (first tape) 454 on which island-like glue portions (glue layers divided into islands) 453 are formed. By controlling the laser output to a low output and cutting the glue layer portion, the glue layer portion can be cut in an island shape without excessive damage to the tape substrate 450. In this method, since the processing width by the laser is about 5 μm, it is a method applicable to a small size of 10 μm pitch or more in a die having a mounting element of about 5 μm □.

  Next, as shown in FIG. 15, in the same manner as in the first embodiment, the wafers after the formation of the first electrodes 411 and 431 and the second electrodes 412 and 432 and the island-like glue portions (island-like portions) cut in a cross-beam shape are used. The sheet 454 on which the glue layer 453 is divided and joined so that the electrodes 411, 412, 431, 432 and the island-like glue part 453 are opposed to each other, and a joined body 460 is obtained.

  Next, as shown in FIG. 16, the wafer and the sheet are bonded to form a bonded body 460, and then a breaking line 461 is formed on the wafer by laser or diamond scribe. After forming the breaking line 461, the wafer is braked along the breaking line 461 to form a die 462. Here, although the case where braking is performed after the wafer and the sheet are joined is illustrated, the braking line 461 may be formed before joining and the braking may be performed after joining.

  Next, as shown in FIG. 17, the distance between each of the plurality of dies is expanded.

Next, as shown in FIG. 18, a braking process is performed, the distance between the dies is expanded, and then the starting substrates 401 and 421 are lifted off in the same manner as in the first embodiment.
In the case of the AlGaInP DH structure 406 in which the starting substrate is a GaAs substrate 401, the starting substrate 401 is lifted off by etching the AlAs sacrificial layer 402 inserted between the starting substrate 401 and the DH layer 406 with a solution such as HF or BHF. .
Note that the substrate need not be lifted off or removed.

  Next, after the starting substrates 401 and 421 are removed, in the same manner as in the first embodiment, the tape is expanded to a desired pitch to form a sheet 465 in which dies are arranged at a desired pitch.

  Next, as shown in FIG. 19, a tape (second tape) 475 having a glue layer 473 on the first surface 471 and a base material 474 on the second surface 472 is prepared, and the substrate lift-off surface 476 of the die is prepared. And the glue layer 473 are opposed to each other, and the dice are transferred to the tape (second tape) 475. As shown in FIG. 20, the first electrode 411, 431 and the second electrode 412, 432 are opposite to the first surface 471. The sheet | seat 480 arrange | positioned in this is formed.

  Next, a mounting substrate 485 on which a drive circuit is formed is prepared.

  Then, as shown in FIG. 21, as in the first embodiment, the electrodes 486, 487, 488, 489 on the mounting substrate 485 are opposed to the first electrodes 411, 431 and the second electrodes 412, 432, The mounting substrate and the die are bonded to form a bonded substrate 490.

  After the bonding substrate 490 is formed, the tape (second tape) 475 is peeled off.

  In the present embodiment, the mounting process of the LED that emits visible light is illustrated, but it is obvious that the light emitting wavelength of the light emitting element does not affect the mounting process, and can be applied regardless of the light emitting wavelength of the present embodiment. Needless to say, the light-emitting element can be applied regardless of the emission wavelength, whether it is an infrared light-emitting element or an ultraviolet light-emitting element.

(Third embodiment)
Next, a third embodiment of the method for manufacturing a light emitting device of the present invention will be described with reference to FIGS.
22 to 30 show a third embodiment of the method for producing a light emitting device of the present invention.
In the present embodiment, as a method of dividing the adhesive layer of the first tape into islands, the point that the island-like adhesive layer is formed on the base material by a printing method or a dispensing method is the first Other than this embodiment, the rest is the same as the first embodiment.

For example, when forming a red or yellow LED as shown in FIG. 22, as in the first embodiment, GaAs or Ge is formed on a selected starting substrate 601 by a metal organic vapor phase epitaxy (MOVPE) method. An active layer 604 made of (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6) and a band gap larger than that of the active layer 604 (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6) AlGaInP-based DH structure 606 in which layers 603 and 605 are arranged on both sides of active layer 604 is fabricated.

  Next, the first electrode 611 is formed in the same manner as in the first embodiment in contact with a part of the first conductivity type layer 605 of the AlGaInP-based DH structure 606.

  Next, as in the first embodiment, a part of the first conductivity type layer 605 and the active layer 604 is removed by wet etching or dry etching to expose the second conductivity type layer 603.

  Next, the second electrode 612 in contact with the region where the second conductivity type layer 603 is exposed is provided in the same manner as in the first embodiment.

For example, in the case of forming a blue or green LED, as in the first embodiment, the metal organic vapor phase epitaxy on a sapphire starting substrate 621 at (MOVPE) _{method, Al x Ga y In z N} (0 ≦ x ≦ Active layer 624 composed of 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1) and Al _x Ga _y In _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1,0) having a band gap larger than that of the active layer 624 ≦ z ≦ 1) An AlGaInN-based DH structure 626 in which the layers 623 and 625 are arranged on both sides of the active layer 624 is manufactured.

  Next, a first electrode 631 is formed in the same manner as in the first embodiment in contact with a part of the first conductivity type layer 625 of the AlGaInN-based DH structure 626.

  Next, as in the first embodiment, the first conductive type layer 625 and a part of the active layer 624 are removed by a dry etching method to expose the second conductive type layer 623.

  Next, the second electrode 632 in contact with the region where the second conductivity type layer 623 is exposed is provided in the same manner as in the first embodiment.

  Next, as shown in FIG. 23, a paste material such as acrylic is ejected from a discharge nozzle in an island shape onto a ductile tape base material (base material portion) 650 such as PVC or PP to form an island-shaped paste portion (in an island shape). A sheet (first tape) 654 on which a divided adhesive layer) 653 is formed is prepared. Although this method depends on the printing accuracy of the head by the printing method or the dispensing method, it is possible to place the glue portion in an island shape at intervals of about 5 μm, and therefore, in a die of about 5 μm □, a pitch of 10 μm or more is used. This method can be applied to small sizes.

  Next, as shown in FIG. 24, in the same manner as in the first embodiment, the wafer after the formation of the first electrodes 611 and 631 and the second electrodes 612 and 632 and the cross-shaped island-shaped paste portions (divided into island shapes). The sheet 654 on which the adhesive layer 653 is disposed is disposed and bonded so that the electrodes 611, 612, 631, 632 and the island-shaped paste portion 653 are opposed to each other, thereby forming a bonded body 660.

  Next, as shown in FIG. 25, the wafer and the sheet are bonded to form a bonded body 660, and then a breaking line 661 is formed on the wafer by laser or diamond scribe. After forming the breaking line 661, the wafer is braked along the breaking line 661 to form a die 662. Here, a case where braking is performed after bonding of the wafer and the sheet is illustrated, but a braking line 661 may be formed before bonding and braking may be performed after bonding.

  Next, as shown in FIG. 26, the distance between each of the plurality of dies is expanded.

Next, as shown in FIG. 27, a braking process is performed to extend the distance between the dies, and then the starting substrates 601 and 621 are lifted off in the same manner as in the first embodiment.
In the case of the AlGaInP DH structure 606 where the starting substrate is a GaAs substrate 601, the starting substrate 601 is lifted off by etching the AlAs sacrificial layer 602 inserted between the starting substrate 601 and the DH layer 606 with a solution such as HF or BHF. .
Note that the substrate need not be lifted off or removed.

  Next, after the starting substrates 601 and 621 are removed, in the same manner as in the first embodiment, the tape is expanded to a desired pitch to form a sheet 665 in which dies are arranged at a desired pitch.

  Next, as shown in FIG. 28, a tape (second tape) 675 having a glue layer 673 on the first surface 671 and a base material 674 on the second surface 672 is prepared, and the substrate lift-off surface 676 of the die is prepared. And the glue layer 673 are opposed to each other, and a die is transferred to a tape (second tape) 675. As shown in FIG. 29, the first electrode 611, 631 and the second electrode 612, 632 are opposite to the first surface 671. The sheet 680 arranged in the above is formed.

  Next, a mounting substrate 685 on which a drive circuit is formed is prepared.

  Then, as shown in FIG. 30, the electrodes 686, 687, 688, 689 on the mounting substrate 685, the first electrodes 611, 631, and the second electrodes 612, 632 are made to face each other in the same manner as in the first embodiment. The mounting substrate 685 and the die are bonded to form a bonded substrate 690.

  After the bonding substrate 690 is formed, the tape (second tape) 675 is peeled off.

  In the present embodiment, the mounting process of the LED that emits visible light is illustrated, but it is obvious that the light emitting wavelength of the light emitting element does not affect the mounting process, and can be applied regardless of the light emitting wavelength of the present embodiment. Needless to say, the light-emitting element can be applied regardless of the emission wavelength, whether it is an infrared light-emitting element or an ultraviolet light-emitting element.

  EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.

Example 1
Metal organic chemical vapor deposition on a GaAs substrate 201 by (MOVPE) _{method, (Al x Ga 1-x} ) y In 1-y P ( yellow: y = 0.5, x = 0.15 , red: y = 0.5, x− = 0.05) and (Al _x Ga _1−x ) _y In _1−y P (x = 0.85, y =) having a larger band gap than the active layer 204. 0.5) An AlGaInP-based DH structure 206 in which the layers 203 and 205 are arranged on both sides of the active layer 204 was produced. At that time, an AlAs sacrificial layer 202 having a thickness of 50 nm was formed between the AlGaInP-based DH structure 206 and the starting substrate 201 (see FIG. 2).

  A semiconductor wafer having such a structure is processed as in the first embodiment, and a PVC on which an island-like portion 253 is formed by cutting the glue layer portion into a cross-beam shape by blade dicing is used as a base material (base material portion). Using the sheet (first tape) 254 (see FIG. 4), 5 to 10 μm square dies were joined to the mounting substrate at a pitch of 35 to 100 μm. The base material (base material part) of the sheet (first tape) has a thickness of 80 μm, the glue part (glue layer) has a thickness of 5 μm, and a blade with a width of 15 μm. did.

(Example 2)
Metal organic chemical vapor deposition on a GaAs substrate 401 by (MOVPE) _{method, (Al x Ga 1-x} ) y In 1-y P ( yellow: y = 0.5, x = 0.15 , red: y = 0.5, x- = 0.05 and an active layer 404 made of), the active layer 404 of the large band gap _{(Al x Ga 1-x)} y in 1-y P (x = 0.85, y = 0.5) An AlGaInP-based DH structure 406 in which the layers 403 and 405 are arranged on both sides of the active layer 404 was produced. At that time, an AlAs sacrificial layer 402 having a thickness of 50 nm was formed between the AlGaInP-based DH structure 406 and the starting substrate 401 (see FIG. 12).

  A semiconductor wafer having such a structure is processed as in the second embodiment, and a sheet (first first) made of PVC on which an island-like portion 453 is formed by cutting the glue layer portion into a cross-beam shape with a laser. Tape) 454 (see FIG. 14) was used to bond 5-10 μm square dies to the mounting substrate at a pitch of 35-100 μm. In addition, the thickness of the base material (base material part) of the sheet (first tape) was 80 μm, the thickness of the glue part (glue layer) was 5 μm, and the glue part was cut into islands at a pitch of 20 to 50 μm using a laser. .

(Comparative example)
The light emitting elements were mounted in the same manner as in Examples 1 and 2 except that the glue portion (glue layer) of the sheet (first tape) was not island-shaped and the pitch of the dies was 15 to 100 μm.

The result of the position defect rate of Examples 1 and 2 and the comparative example is shown in FIG. In addition, as shown in FIG. 31, there are three types of position defects: lateral displacement, longitudinal displacement, and rotation.
As can be seen from FIG. 32, in Examples 1 and 2 using the first tape in which the glue layer was divided into islands, compared to the comparative example using the first tape in which the glue layer was not divided into islands. In addition, positioning errors during mounting have been greatly improved.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

201, 401, 601 ... starting substrate (GaAs substrate),
221, 421, 621... Departure substrate (sapphire substrate, sapphire departure substrate),
202, 402, 602 ... AlAs sacrificial layer,
203, 223, 403, 423, 603, 623 ... second conductivity type layer,
204, 224, 404, 424, 604, 624 ... active layer,
205, 225, 405, 425, 605, 625 ... first conductivity type layer,
206, 406, 606 ... AlGaInP-based DH structure,
226, 426, 426 ... AlGaInN DH structure,
211, 231, 411, 431, 611, 631 ... first electrode,
212, 232, 412, 432, 612, 632 ... second electrode,
250, 450, 650 ... tape base material (base material part), 251, 451 ... glue material (glue layer),
252, 452 ... tape,
253, 453, 653 ... Island-like paste (glue layer divided into islands)
254, 454, 654 ... sheet (first tape),
260, 460, 660 ... joined body, 261, 461, 661 ... braking line,
262, 462, 662 ... dice, 265, 465, 665 ... sheet,
271, 471, 671 ... the first surface, 272, 472, 672 ... the second surface,
273, 473, 673 ... glue layer, 274, 474, 674 ... substrate,
275, 475, 675 ... second tape,
276, 476, 676 ... substrate lift-off surface, 280, 480, 680 ... sheet,
285, 485, 685 ... mounting substrate,
286, 287, 288, 289 ... electrodes, 486, 487, 488, 489 ... electrodes,
686, 687, 688, 689 ... electrodes,
290, 490, 690... Bonding substrate.

Claims (4)

A semiconductor wafer having a light emitting element formed on a substrate is attached to a first tape, and the semiconductor wafer is divided into a plurality of light emitting elements, and the first tape is stretched to extend the plurality of light emitting elements. In the expanding step of extending the distance between the light emitting elements of the elements and the distance between the light emitting elements of the plurality of light emitting elements being expanded, the plurality of light emitting elements are connected to the first tape. A method of manufacturing a light emitting device, comprising: a transfer step of transferring from a second tape to a second tape; and a mounting step of bonding the plurality of light emitting devices to a mounting substrate,
In the dividing step, the first tape is made of a stretchable base material portion and a glue layer, and the glue layer is divided into islands, and the glue layer divided into islands is used as the first tape. A method for manufacturing a light-emitting element, comprising attaching a plurality of light-emitting elements.   The method for manufacturing a light emitting element according to claim 1, wherein the light emitting element is flip-chip bonded to the mounting substrate.   The method for manufacturing a light-emitting element according to claim 1 or 2, wherein the first tape is made of polyvinyl chloride (PVC) or polypropylene (PP).   In the method of dividing the adhesive layer of the first tape into islands, the adhesive layer is cut by a blade or a laser, or an island-like adhesive layer is formed on the base by printing or dispensing. It forms, The manufacturing method of the light emitting element as described in any one of Claims 1-3 characterized by the above-mentioned.

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