JP2003093961A - Method for applying liquid, method for packaging element, method for transferring element, method for arraying element, and method for manufacturing image display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for coating a minute region with a liquid in good coating quality. SOLUTION: The method comprises a process for holding the liquid 5 on a coating member 3 formed by bundling a plurality of wire members 4, a process for forcing out the liquid 5 from the coating member 3 by applying tensile stress in the directions of both ends of the coating member 3 holding the liquid 5, and a process for bringing the liquid 5 forced out from the coating member 3 into contact with a substrate 1. Because the coating member 3 is formed by bundling the wire members 4, it presents a wiry shape. In the method for coating the substrate 1 with the liquid 5 by bringing the liquid 5 held by the wiry coating member 3 into contact with the substrate 1, a region having width equivalent to wire width and a very small area, i.e. a minute region is coated with the liquid.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid application method, and more particularly to a liquid application method suitable for applying a liquid to a minute area.

[0002]

2. Description of the Related Art At present, electronic devices and the like are constructed by arranging a large number of fine elements, electronic parts, electronic devices, and electronic parts in which they are embedded in an insulator such as plastic. Widely used. For example, when the light emitting elements are arranged in a matrix and assembled into an image display device, a liquid crystal display device (L
An element is formed directly on the substrate such as a CD (Liquid Crystal Display) or a plasma display panel (PDP: Plasma Display Panel), or a single L such as a light emitting diode display (LED display) is formed.
ED packages are mounted and arranged.

When an element, an electronic component or the like is mounted on a substrate, an adhesive is applied on the substrate. As a method for applying the adhesive, there are screen printing and application by a dispenser.

In the screen printing apparatus, a mask having mask holes of various sizes and sizes is prepared in accordance with the circuit pattern of the substrate, that is, the arrangement of the area to which the adhesive is applied, and the mask is placed on the substrate from above. Overlap, on the mask,
By sliding a squeegee that attracts the adhesive, the adhesive is printed, that is, applied only to the mask holes. For example, as shown in FIG.
01 with a mask 202, and a squeegee 204 is formed on the substrate 201 through an opening 203 of the mask 202 with an arrow A
The adhesive 205 is extruded by moving the adhesive in the direction indicated by, and the adhesive is printed, that is, applied.

Further, in the application by a dispenser, the adhesive is put in a syringe and extruded from a discharge nozzle arranged at the tip of the dispenser to apply the adhesive in a predetermined pattern.

[0006]

By the way, in recent years, with the miniaturization of mounting components, it has been required to apply an adhesive to a smaller area when mounting an element or electronic component on a substrate. It has become so.

However, in the above-mentioned screen printing application, when the opening piece is 1 mm or less,
There is a problem that the adhesive does not escape from the opening of the mask to the substrate, that is, the adhesive cannot be extruded well through the opening, so that a desired amount of the adhesive cannot be applied. As a measure against this problem, it is considered that the viscosity of the adhesive is reduced to the lowest possible by means such as melting the adhesive in a solvent. However,
When the viscosity of the adhesive is reduced, even if the adhesive can be applied to the base material, the problem that the adhesive oozes and spreads from the base material thereafter occurs.

Further, in the above-mentioned application by the dispenser, when the viscosity of the adhesive becomes high, it becomes difficult for the adhesive to be ejected from the ejection nozzle. Therefore, only a small amount of the adhesive is applied to the substrate, and the desired amount of adhesive is adhered. There is a problem that the agent cannot be applied to the substrate. When the viscosity of the adhesive is higher, the adhesive cannot be applied to the substrate because the adhesive does not come out of the discharge nozzle. As a measure against this problem, it is considered that the viscosity of the adhesive is reduced to the lowest possible by means such as melting the adhesive in a solvent. However, when the viscosity of the adhesive is reduced, even if the adhesive can be applied to the base material, as in the case of screen printing, the adhesive spreads from the base material after the application of the adhesive. The problem occurs.

Therefore, according to the conventional method as described above, the area of a very small area, for example, 0.2 mm on the substrate.
It is very difficult to apply the adhesive to the four-sided shape, and it is impossible to apply the adhesive to the 0.1 mm-sided shape.

Further, in the case of coating in an elongated shape having a width of 0.2 mm and a length of several cm, for example, the above-mentioned screen printing is performed by forming a mask opening in a direction perpendicular to the moving direction of the squeegee. When attempting to apply, as described above, there arises a problem that the adhesive does not escape from the opening of the mask to the substrate, that is, the adhesive cannot be pushed out well through the opening. On the other hand, when the mask opening is formed parallel to the width direction of the squeegee and the adhesive is applied, the adhesive enters the opening, but the problem of abrasion between the squeegee and the mask, that is, the durability of the squeegee and the mask In addition, since the coating quality at both ends of the opening is not stable, good reproducibility of coating cannot be guaranteed, that is, the coating quality is unstable.

Even when the dispenser is used to apply the elongated shape as described above, the applied shape is not stable due to the problem that the applied quality is unstable and the applied state is changed, as in the case of the screen printing. There's a problem.

Therefore, at present, a technique for stably applying an adhesive to a minute region or an extremely elongated region, for example, a shape of 0.2 mm square is not established.

Therefore, the present invention was conceived in view of the above-mentioned conventional circumstances, and an object thereof is to provide a coating method for coating a liquid in a minute region with good coating quality.

Another object of the present invention is to mount a device using the above-mentioned liquid coating method, transfer a device,
An object is to provide a method of arranging elements and a method of manufacturing an image display device.

[0015]

A liquid coating method according to the present invention which achieves the above object is a liquid coating method for coating a liquid on a base material, which is a coating of a plurality of linear members bundled together. It has a step of holding the liquid in the member, a step of pushing the liquid out of the coating member by applying a tensile stress to both ends of the coating member holding the liquid, and a step of bringing the liquid pushed out of the coating member into contact with the substrate. It is characterized by that.

In the liquid coating method according to the present invention as described above, the liquid is held by the coating member formed by bundling a plurality of linear members, and the liquid held by the coating member is extruded from the coating member to form the base material. To be applied to. Here, since the coating member is configured by bundling linear members,
The coating member itself also has a linear shape. Then, by contacting the liquid held by the linear coating member to the substrate, to apply the liquid, in the liquid coating method according to the present invention, the line width, a very small area, That is, the liquid can be applied to the minute area.

An element mounting method according to the present invention which achieves the above object is a method of mounting an element on a substrate, which comprises an adhesive applying step of applying an adhesive for fixing the element to the substrate. A mounting step of mounting an element on an adhesive applied on a substrate, wherein the adhesive applying step includes a step of holding the adhesive on an applying member formed by bundling a plurality of linear members, and an adhesive Characterized in that it has a step of extruding the adhesive from the application member by applying a tensile stress to both ends of the application member holding, and a step of bringing the adhesive extruded from the application member into contact with the substrate. .

In the device mounting method according to the present invention as described above, since the adhesive for fixing the device to the substrate is applied by using the liquid applying method described above, a very small area,
That is, the element can be surely and accurately mounted even in a minute area.

An element transfer method according to the present invention which achieves the above object is an element transfer method for transferring elements arranged on a first substrate onto a second substrate, wherein an element take-out head is used. And a mounting step of mounting the element taken out by the take-out head on the second substrate. The mounting step includes applying an adhesive for fixing the element to the second substrate. A step of mounting an element on the adhesive applied on the second substrate, and the adhesive applying step includes a step of holding the adhesive on an applying member formed by bundling a plurality of linear members. A step of extruding the adhesive from the application member by applying tensile stress to both ends of the application member holding the adhesive, and a step of bringing the adhesive extruded from the application member into contact with the second substrate. It is what

In the device transfer method according to the present invention as described above, since the device transfer is performed by using the above-mentioned liquid application method and device mounting method, it is possible to transfer to a very small area, that is, a minute area. However, the elements can be transferred reliably and accurately.

The element arranging method according to the present invention for achieving the above object is the element arranging method of rearranging a plurality of elements arranged on the first substrate on the second substrate. A first transfer step of transferring the elements so that the elements are separated from the arrayed state on the substrate and holding the elements on the first temporary holding member; A step of hardening the held element with resin, a step of dicing the resin into individual elements, and a step of further separating the elements held by the first temporary holding member and hardened by the resin on the second substrate And a second transfer step, the second transfer step has a take-out step of transferring the element to a take-out head, and a mounting step of mounting the element taken out by the take-out head on the second substrate, The mounting process is an adhesive that secures the element to the second substrate. It has an adhesive applying step of applying and a step of mounting an element on the adhesive applied on the second substrate, and the adhesive applying step adheres to an applying member formed by bundling a plurality of linear members. The step of holding the adhesive, the step of extruding the adhesive from the applying member by applying tensile stress to both ends of the applying member holding the adhesive, and the step of bringing the adhesive extruded from the applying member into contact with the second substrate And a process.

In the device arranging method according to the present invention as described above, the transfer of the devices is performed accurately and surely by using the above-mentioned transfer method, so that the enlarged transfer for increasing the distance between the devices can be performed smoothly. It can be carried out.

The method of manufacturing an image display device according to the present invention which achieves the above object is a method of manufacturing an image display device in which light emitting elements are arranged in a matrix, in which light emitting elements are arranged on a first substrate. The first transfer step of transferring the light emitting element so that the light emitting element is held apart from the first temporary holding member, and the light emitting element held by the first temporary holding member is made of resin. And a step of dicing the resin to separate the light emitting elements for each light emitting element, and further separating the light emitting element held by the first temporary holding member and hardened by the resin onto the second substrate. The second transfer step has a take-out step of transferring the light-emitting element to a take-out head and a mounting step of mounting the light-emitting element taken out by the take-out head on the second substrate. Light emitting element Adhesive application step of applying an adhesive agent that adheres to the substrate, and a step of mounting a light emitting element on the adhesive agent applied on the second substrate, and the adhesive application step includes a plurality of linear The step of holding the adhesive on the coating member formed by bundling the members, the step of pushing the adhesive from the coating member by applying tensile stress to both ends of the coating member holding the adhesive, and the bonding pushed out from the coating member And a step of bringing the agent into contact with the second substrate.

According to the method for manufacturing the image display device of the present invention as described above, the light emitting elements are arranged in a matrix by the transfer method and the arrangement method to form the image display portion. Therefore, the light-emitting elements manufactured in a dense state, that is, by increasing the degree of integration and performing microfabrication, can be efficiently separated and rearranged, and productivity is significantly improved.

[0025]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a liquid coating method, an element mounting method, an element transfer method, an element arranging method, and an image display device manufacturing method according to the present invention will be described in detail with reference to the drawings. . It should be noted that the present invention is not limited to the following description, and can be appropriately modified without departing from the gist of the present invention.

The liquid application method according to the present invention is a liquid application method for applying a liquid to a base material, and a step of holding the liquid in an application member formed by bundling a plurality of linear members, and holding the liquid. It is characterized by including a step of pushing out the liquid from the coating member by applying a tensile stress to both ends of the coating member, and a step of bringing the liquid pushed out of the coating member into contact with the substrate.

In the following, a case where the liquid 5 is applied to a predetermined application area 2 on the substrate 1 as shown in FIG. 1 will be described as an example. To apply the liquid according to the present invention, first, a dedicated application member is constructed. FIG. 2 shows an example of an application member used when applying a liquid according to the present invention. The coating member 3 shown in FIG. 2 is formed by twisting three or more linear wires 4 made of tantalum wire having a diameter of about 20 μm.

Here, the material forming the linear member 4 is not particularly limited as long as it is a material that has corrosion resistance against the liquid 5 to be applied and has an appropriate tensile strength.
Various materials can be used. That is, for example, when the liquid 5 to be applied is an adhesive, the material forming the linear member has appropriate tensile strength and corrosion resistance to the solvent of the adhesive, that is, solvent resistance. The material is not particularly limited, and various materials can be used. However, care must be taken when using a material having good water absorption such as nylon. Here, the water absorbability in the present specification means absorbability including not only water but also the above-mentioned solvent and the like. When the linear member, that is, the coating member has good water absorption, the coating member, that is, the linear member absorbs the water or the solvent of the liquid 5 to be coated, so that the viscosity of the liquid 5 changes. There is a possibility that inconveniences such as poor coatability and inability to coat the liquid 5 in a desired state may occur.

Further, the appropriate tensile strength is such a strength as not to be broken or broken by the tensile stress when a predetermined tensile stress is applied to both ends of the coating member 3 as will be described later. Is. As such a material, for example, a metal material or silk thread is suitable, and as the metal material, for example, tantalum or stainless steel is suitable. However, when used for semiconductors, fine impurities also pose a problem, so it is preferable to use a metal material that does not generate dust.

In FIG. 2, the coating member 3 is formed by twisting three linear members 4, that is, tantalum wires. However, in the present invention, the number of linear members 3 is three. The number is not limited to three and may be any number as long as it is plural.

The linear members 3 do not necessarily have to be twisted, but may be simply bundled. By forming a coating member 3 by bundling a plurality of linear members 4, when the coating member 3 holds the liquid 5 as described later, the liquid 5 adheres to the surface of the holding member and is linear due to surface tension. Member 4
And the linear member 4 are inserted and held. As a result, the liquid 5 can be held on the coating member 3. In this way, the liquid 5 that has entered between the linear members 4 due to the surface tension does not squeeze out by applying tensile stress to the coating member 3 and the linear members 4 and 4 It does not come out from between. The amount of liquid held by the coating member 3 is determined by various conditions such as the thickness and the number of linear members 4 and the viscosity of the liquid 5. Therefore, by adjusting various conditions such as the thickness and the number of the linear members 4 and the viscosity of the liquid 5, the amount of the liquid 5 suitable for the desired coating condition can be held in the coating member 3.

One of the points of the present invention is how to hold the liquid in the coating agent 3. In order to obtain such an effect, the liquid 5 is held between the linear members 4 and 4. If possible, it is not always necessary to twist the linear members 4, and therefore the coating member 3 may be configured by simply bundling a plurality of linear members 4.

Next, the coating member 3 is caused to hold the liquid 5.
Here, in order to hold the liquid 5 on the coating member 3, the coating member 3 may be dipped into the liquid 5 as shown in FIG. 3, or the liquid may be sprayed using a sprayer 6 or the like as shown in FIG. 5
May be sprayed. At this time, a predetermined amount of tensile stress is applied to the coating member 3 in both end directions of the coating member 3. Here, the predetermined stress means that the twisted linear member 4, that is, the tantalum wire is not excessively loosened,
In addition, an appropriate stress may be applied to the extent that excessive slack does not occur and the coating member 3 does not come into contact with other members when it is moved. By applying a predetermined tensile stress to the coating member 3, the linear member 4, that is, the wire made of tantalum can be appropriately disentangled, whereby the linear member 4 and the linear member 4 are separated from each other. The liquid 5 can be made to easily enter into the coating liquid 3, and the liquid 5 can be reliably held in the coating member 3 as shown in FIG.

Next, the coating member 3 holding the liquid 5 is placed above the predetermined position of the substrate 1, that is, at a position slightly separated from the substrate 1 on the predetermined coating region 2. Then, by applying a predetermined tensile stress to both ends of the coating member 3, the coating member 3 is held by the coating member 3, that is, the linear member 4 and the linear member 4, as shown in FIG. The liquid 5 that has entered the space is pushed out.

Then, in this state, the coating member 3 is brought into contact with a predetermined position of the substrate 1, that is, a predetermined coating region 2 as shown in FIG. Thereby, the linear member 4 of the coating member 3
The liquid 5 extruded from between the linear member 4 and the linear member 4 comes into contact with the coating region 2, and the linear member 4 of the coating member 3 is applied as shown in FIG.
The liquid 5 extruded from between the and the linear member 4 is applied to a predetermined position on the substrate 1.

At this time, the amount of liquid applied from the application member 3 is controlled to a predetermined amount held by the application member 3, so that an excessive amount of the liquid 5 is applied to the application region 2 of the substrate 1. It is possible to apply a desired minute amount of the liquid 5 without the need. Further, since the area to which the liquid 5 is applied is approximately the width of the application member 3, the liquid 5 can be applied reliably and accurately even to an extremely narrow area. Since the width of the coating member 3 can be freely controlled by adjusting the thickness of the linear member 4 forming the coating member 3, the number of the linear members 4, and the like, in a very narrow region. Also, the liquid 5 can be applied reliably and accurately with a desired width.

Therefore, by using this liquid application method, the liquid 5 can be applied reliably and accurately even to an area having a very fine width of, for example, about 0.1 mm. Then, specifically, for example, the diameter is 0.
The coating member 3 is formed by twisting three 05 mm linear members 4 together.
And the use of the coating member 3 makes it possible to apply the liquid 5 reliably and accurately to an area having a coating width of 0.1 mm. In addition, in this coating method, since the liquid 5 extruded from between the linear members 4 of the coating member 3 is directly contacted with the substrate 1, the liquid 5 is coated, so that the viscosity of the liquid 5 is increased. The liquid 5 can be applied reliably and accurately without causing a significant change in the application shape and application quality even if the value changes a little.

When the liquid 5 is applied to a width relatively wider than the width of the coating member 3, it is not necessary to replace the coating member 3, and the coating member 3 is brought into contact with the substrate 1, that is, the coating is performed. The liquid 2 can be applied to a region having a desired width by repeating the application of the liquid 5 a plurality of times in the same manner as described above while slightly shifting the application position of the liquid 5 by the member 3. Therefore, this liquid application method can be applied not only to narrow regions but also to regions of various shapes.

Next, a specific example in the case of using the liquid coating method as described above will be described. In the following, for example, as shown in FIG.
A case where the above-described liquid application method is used when forming the passive matrix of IP12 will be described. In the passive matrix of LIP12 shown in FIG. 9, LIP12 has 153 rows at 200 μm intervals and 51 at 600 μm intervals.
It is formed by arranging rows. L like this
When forming the passive matrix of the IP12, it is necessary to first apply the adhesive 13 for fixing the LIP12 to a predetermined position on the substrate 11, that is, a position where the LIP12 is mounted.

Here, originally, the adhesive 13 is preferably applied only to the region where the LIP 12 is mounted. However, since the LIP 12 itself is fine, applying the adhesive 13 only to the region where the LIP 12 is mounted may complicate the process depending on the application method, and it may be troublesome or impossible to apply. Therefore, considering the useless application area as much as possible, it is most effective to reduce the application between the rows of the LIPs 12, that is, the area 14 in FIG.

Therefore, in order to apply the adhesive 13 while omitting the region 14, the adhesive 13 may be applied on the row of the LIPs 12, and the adhesive 13 may be applied in a substantially linear shape. That is, it suffices to apply the adhesive 13 in an elongated shape having a width of about 160 μm, but it is very difficult to apply the adhesive 13 in such an extremely elongated shape by the conventional application method. .

However, by using the above-mentioned liquid application method, the adhesive 13 can be applied reliably and accurately to such an extremely elongated shape.
To apply the present invention to apply the adhesive 13 in an elongated shape having a width of about 160 μm, first, as the dedicated application member, for example, the application member 3 shown in FIG. Application member 3 constructed by twisting a wire of tantalum having a diameter of about 20 μm or more
Make up.

Next, the adhesive 13 is held on the coating member 3. As the adhesive 13, for example, a thermoplastic adhesive can be used. Here, in order to hold the adhesive 13 on the coating member 3, the holding member holds the adhesive 13 by immersing the coating member 3 in the adhesive 13 as shown in FIG. 3, for example. At this time, a predetermined amount of tensile stress is applied to the coating member 3 in both end directions of the coating member 3 as described above. As a result, the linear member 4, that is, the tantalum wire can be appropriately unraveled, which makes it easier for the adhesive 13 to enter between the linear members 4. Therefore, the adhesive 13 can be securely held on the coating member 3.

Next, the coating member 3 holding the adhesive 13
The upper part of a predetermined application area of the substrate 11, that is, the substrate 11
It is arranged at a position slightly separated from the substrate 11 in the upper part of the row on which the LIP 12 is mounted. Then, by applying a predetermined tensile stress to both ends of the coating member 3, the coating member 3 is held by the coating member 3, that is, the linear member 4 and the linear member 4, as shown in FIG. The adhesive 13 that has entered the space is pushed out. Then, in this state, the coating member 3 is brought into contact with a predetermined position of the substrate 11, that is, a row on which the LIP 12 is mounted, as shown in FIG.

As a result, the adhesive 13 extruded from between the linear members 4 of the coating member 3 comes into contact with the coating region, and the linear members 4 and 4 of the coating member 3 The adhesive 13 extruded from between is applied to a predetermined position on the substrate 11. Then, while the position where the application member 13 is brought into contact with the substrate 11, that is, the application position of the adhesive 13 by the application member 3 is gradually shifted, the application of the adhesive 13 is repeated a plurality of times in the same manner as described above. Adhesive 13 to the desired width, ie 160 μm width as shown
Can be applied. Then, the adhesive 13 is applied to a predetermined application region in the same manner as described above, and the LIP 12 is mounted on the applied adhesive 13 at a predetermined interval, so that the LIP 12 as shown in FIG. A matrix can be formed.

Therefore, by applying the liquid application method according to the present invention, it becomes possible to apply the adhesive 13 to the linear region having a width of about 160 μm, and the LIP 12 can be simply and easily saved without waste. It is possible to form a passive matrix of In the above description, the case where the adhesive 13 is applied to the linear region having a width of about 160 μm has been described as an example. However, by using the above-described method, the adhesive 13 is applied to a region having a width of about 100 μm, for example. It is also possible to do so.

In the above description, the case where the linear member forming the coating member is made of a material having corrosion resistance against the liquid to be coated and having an appropriate tensile strength has been described. For example, the liquid is an adhesive. In some cases, conversely, a material that does not have corrosion resistance to a liquid and is soluble in the liquid can be used. For example, the coating member can be configured by using a material having an infinite swelling property for a liquid as the linear member. Here, swelling is a phenomenon in which an object absorbs liquid and increases its volume without changing its essence.In particular, infinite swelling means that swelling progresses endlessly and finally becomes a solution. It means to end up.

In order to apply the liquid using such a material as the applying member, the applying member holds the liquid in the same manner as described above, and the liquid is placed at a predetermined position on the substrate. Then, in this state, the application member swells infinitely, that is, dissolves in the liquid, so that the liquid can be applied to a predetermined position on the substrate. Therefore, the application member in this case is disposable once.

When the adhesive is applied by this method, for example, a linear member formed by evaporating a solvent from the adhesive is used as the applying member, and the applying member is produced as a liquid by applying the adhesive. It is possible to use an agent, a solvent for the adhesive, or a liquid that can dissolve the coating member and does not change the function of the adhesive when the coating member dissolves. Further, an adhesive can be used as the liquid, and a liquid that is soluble in the adhesive and does not change the function of the adhesive when dissolved in the adhesive can be used as the coating member.

As such a coating member, for example, a linear adhesive formed by evaporating a solvent from a thermoplastic adhesive can be used. In this case, the application member may be formed by, for example, dropping a thermoplastic adhesive from a predetermined height in an extremely small amount in a dry atmosphere and drying the solvent contained until the thermoplastic adhesive reaches the ground. it can.

The case where the LIP12 is mounted to form a passive matrix has been described above.
The applicable field of the liquid application method according to the present invention is not limited to the mounting of electronic components and semiconductor elements, but can be widely applied in various fields.

The LEs that compose the LIP 12 described above.
As D, for example, a so-called pyramid-shaped LED can be used. The LED will be described below.

In this LED, a crystal layer having an S-plane inclined to the main surface of the substrate or a plane substantially equivalent to the S-plane is formed on the substrate, and the S-plane or the S-plane is substantially formed. First-conductivity-type layer, active layer, which extends in a plane parallel to a plane equivalent to
And a second conductivity type layer formed on the crystal layer.

The substrate used for this LED is S described later.
There is no particular limitation as long as it can form a crystal layer having a plane or a plane equivalent to its S plane, and various types can be used. For example, the substrate that can be used is
Sapphire (including Al ₂ O ₃ , A surface, R surface, and C surface)
SiC (including 6H, 4H, 3C) GaN, Si, Z
nS, ZnO, AlN, LiMgO, GaAs, MgA
A substrate made of 1 ₂ O ₄ , InAlGaN, or the like, preferably a hexagonal crystal substrate or a cubic crystal substrate made of these materials, and more preferably a hexagonal crystal substrate.
For example, when a sapphire substrate is used, it is possible to use a sapphire substrate having a C-plane as the main surface, which is often used when growing a gallium nitride (GaN) -based compound semiconductor material. In this case, the C plane as the main surface of the substrate includes a plane orientation inclined in the range of 5 to 6 degrees.

The crystal layer formed on this substrate has an S surface inclined with respect to the main surface of the substrate or a surface substantially equivalent to the S surface. The crystal layer is a material layer capable of forming a light emitting region including a first conductivity type layer, an active layer, and a second conductivity type layer on a plane parallel to an S plane or a plane substantially equivalent to the S plane described later. There is no particular limitation as long as it is sufficient, but it is preferable that it has a wurtzite crystal structure.

As such a crystal layer, for example, III
Group compound semiconductors and BeMgZnCdS compound semiconductors can be used, and further gallium nitride (GaN) compound semiconductors, aluminum nitride (AlN) compound semiconductors, indium nitride (InN) compound semiconductors, indium gallium nitride (InGaN) can be used. A compound semiconductor or an aluminum gallium nitride (AlGaN) compound semiconductor can be preferably formed, and a gallium nitride compound semiconductor is particularly preferable.

In this LED, InGaN,
AlGaN, GaN, etc. do not necessarily have only ternary mixed crystals.
It does not refer to a nitride semiconductor containing only a mixed crystal, but may include, for example, I
It goes without saying that nGaN may contain a trace amount of Al and other impurities within a range that does not change the action of InGaN. Further, the surface substantially equivalent to the S-plane includes a plane orientation tilted in the range of 5 to 6 degrees with respect to the S-plane.

As a method of growing this crystal layer, various vapor phase growth methods can be mentioned, for example, a metal organic compound vapor phase growth method (MOCVD (MOVPE) method) and a molecular beam epitaxy method (MBE method). A vapor phase growth method, a hydride vapor phase growth method (HVPE method), or the like can be used. Among them, according to the MOVPE method, a material having good crystallinity can be obtained quickly.

In the MOVPE method, TM is used as a Ga source.
G (trimethylgallium), TEG (triethylgallium), TMA (trimethylaluminum) and TEA (triethylaluminum) as Al sources, and TMI (trimethylindium) and TEI as In sources.
Alkyl metal compounds such as (triethylindium) are often used, and gases such as ammonia and hydrazine are used as nitrogen sources. As the impurity source, Si is silane gas, Ge is germane gas,
For Mg, a gas such as Cp2Mg (cyclopentadienyl magnesium) is used, and for Zn, a gas such as DEZ (diethyl zinc) is used.

In the MOCVD method, these gases are supplied to the surface of the substrate heated to, for example, 600 ° C. or higher to decompose the gases, whereby the InAlGaN compound semiconductor can be epitaxially grown.

Before forming the crystal layer, it is preferable to form a base growth layer on the substrate. This undergrowth layer consists of, for example, a gallium nitride layer or an aluminum nitride layer, and the undergrowth layer consists of a combination of a low temperature buffer layer and a high temperature buffer layer or a combination of a buffer layer and a crystal seed layer that functions as a crystal seed. May be Like the crystal layer, this undergrowth layer can be formed by various vapor phase growth methods,
For example, a vapor phase growth method such as a metal organic compound vapor phase growth method (MOCVD method), a molecular beam epitaxy method (MBE method), or a hydride vapor phase epitaxy method (HVPE method) can be used.

If the growth of the crystal layer is started from the low temperature buffer layer, polycrystals are likely to be deposited on the mask, which becomes a problem. Therefore, a crystal having a better crystallinity can be grown by including a crystal seed layer and then growing a surface different from the substrate on the crystal seed layer. Also, in order to perform crystal growth using selective growth, it is necessary to form from a buffer layer if there is no crystal seed layer, but if selective growth is performed from the buffer layer, growth is hindered Growth is likely to occur. Therefore, by using the crystal seed layer, the crystal can be grown with good selectivity in the region where the growth is required. The buffer layer also has the purpose of alleviating the lattice mismatch between the substrate and the nitride semiconductor. Therefore, the buffer layer may not be formed when a substrate having a lattice constant close to that of the nitride semiconductor or a substrate having the same lattice constant is used. For example, a buffer layer may be formed on SiC without keeping AlN at a low temperature, and AlN and GaN may be formed on a Si substrate.
May grow as a buffer layer without lowering the temperature, and still good quality GaN can be formed. Further, the structure may be such that no buffer layer is provided, and a GaN substrate may be used.

In this LED, the selective growth method can be used to form the S-plane or a plane substantially equivalent to the S-plane. The S-plane is a stable plane that can be seen when selectively grown on the C + plane, is a plane that is relatively easy to obtain, and has a hexagonal plane index of (1-101). Similar to the C + and C− planes on the C plane, there are S + and S− planes on the S plane, but here, unless otherwise specified, the S + plane is grown on the C + plane GaN. This is described as the S-plane. In addition, about S side, S
The + side is the stable side. The surface index of the C + surface is (000
1).

Regarding the S-plane, when the crystal layer is made of a gallium nitride-based compound semiconductor as described above, the number of bonds from Ga to N is 2 or 3 on the S-plane, which is next to the C-plane. Become. Here, since the C-plane cannot be practically obtained on the C + plane, the number of bonds on the S-plane becomes the largest. For example, when a nitride is grown on a sapphire substrate having a C-plane as the main surface, the surface of the wurtzite type nitride generally becomes the C + plane, but the S-plane can be formed by using selective growth. , The bond of N, which tends to be easily detached on the plane parallel to the C-plane, is bonded by one bond from Ga, while it is bonded by at least one pound on the inclined S-plane. . Therefore, V /
The III ratio is increased, which is advantageous for improving the crystallinity of the laminated structure. Further, when grown in a direction different from that of the substrate, dislocations extending upward from the substrate may be bent, which is also advantageous in reducing defects.

In this LED, the crystal layer has a structure having at least the S-plane or a plane substantially equivalent to the S-plane, and in particular, the crystal layer is substantially equivalent to the S-plane or the S-plane. May have a structure of forming substantially hexagonal pyramid-shaped slopes, or an S-plane or a surface substantially equivalent to the S-plane may form substantially hexagonal truncated pyramid-shaped slopes and C-planes. Alternatively, a structure in which a surface substantially equivalent to the C surface constitutes the upper flat surface portion of the substantially hexagonal truncated pyramid shape, that is, a so-called substantially hexagonal truncated pyramid shape may be used. The substantially hexagonal pyramid shape and the substantially hexagonal pyramid shape do not need to be exactly hexagonal pyramids, and include those in which some of the faces disappear. Further, the ridgeline between the crystal planes of the crystal layer does not necessarily have to be a straight line. Also,
The substantially hexagonal pyramid shape or the substantially hexagonal pyramid shape may be a linearly extended shape.

As a specific selective growth method, such selective growth is performed by selectively removing a part of the underlying growth layer, or selectively on the underlying growth layer or This is performed by utilizing the opened portion of the mask layer formed before the formation of the underlying growth layer. For example, when the underlying growth layer is composed of a buffer layer and a crystal seed layer, the crystal seed layer on the buffer layer is subdivided into small regions having a diameter of about 10 μm, and S is grown by crystal growth from each portion.
It is possible to form a crystal layer having a surface or the like.

For example, the subdivided crystal seed layers can be arranged so as to be separated with a margin for separating the light emitting elements taken into consideration, and individual small regions can be strip-shaped, lattice-shaped, circular-shaped, Square shape, hexagonal shape, triangular shape,
The shape may be a rectangular shape, a rhombus shape, or a modified shape thereof. Forming a mask layer on the underlying growth layer,
Selective growth is also possible by selectively opening the mask layer to form a window region. The mask layer can be composed of, for example, a silicon oxide layer or a silicon nitride layer. When the above-described substantially hexagonal truncated pyramid shape or substantially hexagonal pyramid shape is a linearly extended shape, a pyramidal frustum or pyramid shape in which one direction is the longitudinal direction makes the window region of the mask layer band-shaped. Alternatively, the crystal seed layer may be formed into a band shape.

The window region of the mask layer is made 10 μm by selective growth.
By making a circle of about m (or a hexagon of which sides are 1-100 directions, or a hexagon of which sides are 11-20 directions), it is possible to easily fabricate a selective growth region which is about twice that size. Also, if the S-plane is in a different direction from the substrate, the effect of bending dislocations,
Also, since it has an effect of shielding dislocations, it is also useful for reducing dislocation density.

In the experiment conducted by the present inventors, when the hexagonal truncated pyramid shape grown by using cathode luminescence is observed, the crystal of the S plane is of good quality and the luminous efficiency is higher than that of the C + plane. Has been shown. Especially I
Since the growth temperature of the nGaN active layer is 700 to 800 ° C., the decomposition efficiency of ammonia is low and more N species are required. Also, when the surface was observed with an AFM, the steps were aligned and a surface suitable for incorporation of InGaN was observed. Furthermore, it is known that the growth surface of the Mg-doped layer generally has a poor surface condition at the AFM level, but the growth of the S-plane also causes the Mg-doped layer to grow in a good surface condition and the doping conditions are considerably different. .

Further, when microphotoluminescence mapping is performed, it is possible to measure with a resolution of about 0.5-1 μm, but with the usual method grown on the C + plane,
There was unevenness of about 1 μm pitch, and uniform results were obtained for the sample obtained by S-plane by selective growth. Also, SEM
The flatness of the slope seen in Figure 4 is also smoother than that of the C + surface.

Further, in the case of selective growth using the selective growth mask, since there is no lateral growth when growing only on the opening of the selective mask, the lateral growth is performed using microchannel epitaxy. It is possible to make the shape larger than the window region. It is known that the lateral growth using such microchannel epitaxy makes it easier to avoid threading dislocations and reduces dislocations. In addition, such lateral growth also increases the light emitting region, which makes it possible to make the current uniform, avoid current concentration, and reduce the current density.

In this semiconductor light emitting device, a first conductivity type layer, an active layer, and a second conductivity type layer extending in a plane parallel to the S plane or a plane substantially equivalent to the S plane are used as crystal layers. Form. The first conductivity type is a p-type or n-type cladding layer, and the second conductivity type is the opposite conductivity type. For example, when the crystal layer forming the S-plane is composed of a silicon-doped gallium nitride-based compound semiconductor layer, the n-type cladding layer is composed of a silicon-doped gallium-nitride-based compound semiconductor layer, and an InGaN layer is formed thereon as an active layer. And a magnesium-doped gallium nitride-based compound semiconductor layer is further formed thereon as a p-type clad layer to form a double hetero structure. It is also possible to have a structure in which the InGaN layer which is the active layer is sandwiched between AlGaN layers.

Although the active layer can be formed of a single bulk active layer, it has a single quantum well (SQW) structure, a double quantum well (DQW) structure, and a multiple quantum well (MQ) structure.
The quantum well structure such as the W) structure may be formed. A barrier layer is additionally used in the quantum well structure for the purpose of separating the quantum well. When the active layer is an InGaN layer, the structure is particularly easy to manufacture in the manufacturing process,
The light emission characteristics of the device can be improved. Furthermore this I
The nGaN layer is particularly easy to crystallize and has good crystallinity when grown on the S-plane, which has a structure in which nitrogen atoms are hard to be desorbed, and the luminous efficiency can be improved.

Note that the nitride semiconductor has a property of becoming n-type due to nitrogen vacancies formed in the crystal even though it is non-doped.
Usually, by doping a donor impurity such as Si, Ge, or Se during crystal growth, an n-type having a preferable carrier concentration can be obtained. Further, the p-type nitride semiconductor can be obtained by doping the crystal with an acceptor impurity such as Mg, Zn, C, Be, Ca, or Ba, but in order to obtain a p-layer having a high carrier concentration, Is preferably annealed at a temperature of 400 ° C. or higher in an inert gas atmosphere such as nitrogen or argon after doping with an acceptor impurity. There is also a method of activation by electron beam irradiation or the like, which is activated by microwave irradiation, light irradiation, or the like. There is also a way to make it.

The first-conductivity-type layer, the active layer, and the second-conductivity-type layer extend in a plane parallel to the S-plane or a plane substantially equivalent to the S-plane. Can be easily extended by continuing crystal growth where the S-plane or the like is formed. When the crystal layer has an approximately hexagonal pyramid shape or an approximately hexagonal pyramid trapezoidal shape and each inclined surface is an S plane or the like, the entire light emitting region including the first conductivity type layer, the active layer, and the second conductivity type layer is formed. It can be formed on a part of the S surface. In the case of the substantially hexagonal truncated pyramid shape, the first conductivity type layer, the active layer, and the second conductivity type layer can be formed on the upper surface parallel to the main surface of the substrate. Light is attenuated by multiple reflection on a parallel plate by utilizing the inclined S surface to emit light, but if there is an inclined surface, light can escape the influence of multiple reflection and go out of the semiconductor. There is an advantage. The first conductivity type layer, that is, the clad layer can be made of the same material as the crystal layer forming the S-plane and of the same conductivity type, and is formed while continuously adjusting the concentration after forming the crystal layer forming the S-plane. You can also
As another example, a part of the crystal layer of the S plane is the first
It may have a structure that functions as a conductive layer.

In this semiconductor light emitting device, the luminous efficiency can be enhanced by utilizing the good crystallinity of the inclined S plane. In particular, if current is injected only into the S-plane, which has good crystallinity,
Since the S-plane has good In incorporation and good crystallinity, it is possible to increase the luminous efficiency. Further, the area extending in the plane substantially parallel to the S-plane of the active layer may be larger than the area when the active layer is projected onto the main surface of the substrate or the underlying growth layer.

By increasing the area of the active layer in this way, the light emitting area of the device is increased, and the current density can be reduced only by that. In addition, by making the area of the active layer large, it is possible to reduce the brightness saturation, which can increase the light emission efficiency.

Considering a hexagonal pyramid-shaped crystal layer, the step state is deteriorated particularly near the apex of the S-plane, and the luminous efficiency is low at the apex. This is a hexagonal pyramid-shaped element, which is divided into four points on the apex side, left side edge, right side edge, and bottom side with the center of each surface as the center. This is because abnormal growth is likely to occur near the top while hitting. On the other hand, the steps on both sides are almost linear and are densely packed, resulting in a very good growth state, and the part near the bottom surface is a slightly wavy step. , The abnormal growth on the top side has not occurred.

Therefore, in this semiconductor light emitting device, the current injection into the active layer can be controlled so that the density is lower near the apex than on the peripheral side. In order to pass a low-density current near the apex, the electrode is formed on the side of the slope, but the electrode is not formed on the apex, or before the electrode is formed on the apex. The structure may form a current blocking region.

Electrodes are formed on the crystal layer and the second conductivity type layer, respectively. In order to reduce the contact resistance, a contact layer may be formed and then an electrode may be formed on the contact layer. When these electrodes are formed by a vapor deposition method, a short circuit may occur if the p electrode and the n electrode are placed on both the crystal layer and the crystal seed layer formed under the mask,
Accurate vapor deposition is required for each.

A plurality of the semiconductor light emitting devices can be arranged to form an image display device or a lighting device. By arranging the respective elements for the three primary colors and arranging them so that they can be scanned, the electrode area can be suppressed by utilizing the S-plane, so that it can be used as a display with a small area.

Next, an application example using a mask in the liquid coating method of the present invention will be described. In the following, the adhesive 2 is applied to a predetermined area 22 on the substrate 21 as shown in FIG. 12, that is, an area 22 having a substantially square shape with one side of about 160 μm.
The case of applying 3 will be described as an example. To apply the adhesive 23 by applying the present invention, first, a dedicated application member is prepared. Here, the coating member 3 shown in FIG. 2 described above, that is, three or more linear members 4 having a diameter of approximately 2 is used.
The coating member 3 is formed by twisting a wire made of 0 μm tantalum.

Next, the adhesive 23 is held on the coating member 3. Here, in order to hold the adhesive on the coating member 3, for example, as shown in FIG. 3, the coating member 3 is dipped in the liquid 23 to hold the adhesive 23 on the coating member 3. At this time, a predetermined amount of tensile stress is applied to the coating member 3 in both end directions of the coating member 3 as described above. As a result, the linear member 4, that is, the tantalum wire can be appropriately unraveled, whereby the adhesive 23 is formed between the linear members 4 and 4.
Can be easily entered, and the adhesive 23 can be reliably held on the coating member 3.

Next, a mask 25 having an opening 24 having substantially the same shape and size as the predetermined region 22, that is, the region 22 having a substantially square shape with one side of approximately 160 μm is formed as shown in FIG.
As shown in FIG. At this time, the mask 25 is placed on the substrate 21 so that the opening 24 overlaps the predetermined region 22 to which the adhesive 23 is applied.

Next, the coating member 3 holding the adhesive 23
On the predetermined application region of the substrate 21, that is, on the opening 24 of the mask 25 at a position slightly separated from the mask 25. Then, by applying a predetermined tensile stress to both ends of the coating member 3, the coating member 3 is held by the coating member 3, that is, the linear member 4 and the linear member 4, as shown in FIG. The adhesive 23 that has entered the space is pushed out.

Then, in this state, the coating member 3 is applied to the mask 2
5 is placed on the opening 24 and is brought into contact with the predetermined region 22 through the opening 24. Thereby, the adhesive 2 extruded from between the linear members 4 of the coating member 3
3 comes into contact with the area 22 and the application member 3 is contacted as shown in FIG.
The adhesive 23 extruded from between the linear members 4 is applied to a predetermined position on the substrate 21.

Then, within the range of the opening 24 of the mask 25, the position at which the coating member 3 is brought into contact with the substrate 21, that is, the position at which the adhesive 23 is coated by the coating member 3 is gradually shifted while adhering in the same manner as described above. By repeating the application of the agent 23 a plurality of times, it is possible to apply the adhesive agent 23 in a range limited by the opening 24 of the mask 25 as shown in FIG.

When the mask 25 is used as described above, the range in which the adhesive 23 is applied is limited to the range of the opening 24 of the mask 25. That is, as described above, by arranging the mask 25 having the opening 24 having substantially the same shape and size as the predetermined area 22 to which the adhesive 23 is applied on the substrate 21, the range where the adhesive 23 is applied. Is limited to the range of the opening 24 of the mask 25.

Specifically, by using the mask 25, it is possible to accurately control the area to which the adhesive 23 is applied in the longitudinal direction of the application member 3. This allows
It is possible to accurately control the area to which the adhesive 23 is applied not only in the line width direction of the coating member 3 but also in the longitudinal direction of the coating member 3. Since the range in which the adhesive 23 is applied is limited in the width direction of the application member 3 by using the mask 25, the area in which the adhesive 23 is applied can be controlled more accurately.

Therefore, by using the mask in the liquid coating method according to the present invention, not only in the line width direction of the coating member 3 but also in the longitudinal direction of the coating member 3, the desired 22 regions can be reliably and accurately formed. Since the adhesive 23 can be applied, the adhesive 23 can be applied to the desired region 22 more reliably and more accurately.

Next, a mounting method of the element according to the present invention will be described as a specific example in the case of using the above-mentioned mask. In the following, as shown in FIG. 17, an active chip 32, a red (R) light emitting diode (LED) is hardened with resin on a substrate 31, a red LIP 33, and a green (G).
A case will be described in which a green LIP 34 in which a light emitting diode is hardened with a resin and a blue LIP 35 in which a blue (B) light emitting diode is hardened with a resin are mounted. When the active chip 32 and the LIPs 33, 34, and 35 are mounted on the substrate 31 as described above, the active chip 32 and the LIP 3 are mounted.
Adhesives having different curing temperatures are used for 3, 34 and 35.
Then, the LIPs 33, 34, and 35 are first bonded with an adhesive having a high curing temperature, and then the active chip 32 is bonded with an adhesive having a low curing temperature, so that mounting is performed.

To implement, first, LIP33,3
Apply adhesive for No. 4,35. LIP33,34,3
To apply the adhesive for No. 5, the mask is formed so that the openings 37, 38, 39 of the mask 36 are arranged at the predetermined positions for mounting the LIPs 33, 34, 35 on the substrate 31, as shown in FIG. 36 is placed on the substrate 31. And
LIP3 through the openings 37, 38, 39 of the mask 36
A first adhesive 40, which is an adhesive for 3, 34 and 35, is applied.

To apply the first adhesive 40, refer to FIG.
1 is used, that is, the coating member 41 formed by twisting three or more linear wires 42 made of stainless steel wire having a diameter of about 20 μm. Then, the coating member 41 holds the first adhesive 40. Here, in order to make the coating member 41 hold the first adhesive 40, for example, the coating member 41 is fixed to the first adhesive 4
The first adhesive 40 is held by the coating member 41 by being dipped in 0.

At this time, a predetermined amount of tensile stress is applied to the coating member 41 in both end directions of the coating member 41. As a result, the linear member 42, that is, the stainless wire can be appropriately unraveled,
As a result, the first linear member 42 is provided between the linear members 42.
The adhesive 40 can easily enter, and the first adhesive 40 can be reliably held on the coating member 41.

Then, the coating member 41 holding the first adhesive 40 is applied to the mask 36 on a predetermined application region of the substrate 31, that is, on the openings 37, 38 and 39 of the mask 36.
Place it slightly away from. Then, by applying a predetermined tensile stress to both ends of the coating member 41, the coating member 41 is held by the coating member 41, that is, is inserted between the linear members 42 and 42. The adhesive 40 of No. 1 is extruded. Then, in this state, the coating member 41 is applied to the openings 37, 38, 39 of the mask 36.
It is placed on and is brought into contact with a predetermined application area through the openings 37, 38, 39.

As a result, the linear member 42 of the coating member 41 is formed.
And the first adhesive 4 extruded from between the linear member 42
0 comes into contact with the application area, and as shown in FIG.
The first adhesive 40 extruded from between the one linear member 42 and the linear member 42 is applied to a predetermined position on the substrate 31. Then, within the range of the openings 37, 38, 39 of the mask 36, while slightly shifting the position at which the coating member 41 contacts the substrate 31, that is, the coating position of the first adhesive 40 by the coating member 41, Similarly, the first
By repeating the application of the adhesive 40 of FIG.
1, the range defined by the openings 37, 38, 39 of the mask 36, that is, LIPs 33, 34, 35
The first adhesive 40 can be applied to a predetermined position for mounting.

Next, the mask 36 is removed, and the LIPs 33, 34, 3 are applied onto the first adhesive 40 applied in a predetermined shape.
5 is placed on each of them and heated to a predetermined temperature to melt and cure the first adhesive 40 so that the LIPs 33, 3
The mounting of 4,35 is completed.

Next, a second adhesive 44, which is an adhesive for the active chip 32, is applied. To apply the second adhesive 44, as shown in FIG. 18, the mask 3 is placed on the substrate 31 at a predetermined position where the active chip 32 is mounted.
The mask 36 is again arranged at a predetermined position on the substrate 31 so that the openings 43 of 6 are arranged.

At this time, the mask 36 has the LIP 33,
The openings 37, 38, 39 having substantially the same shape and size as the LIPs 33, 34, 35 used when applying the first adhesive 40, which is an adhesive for 34, 35, are LIPs 33, 3
It is provided at a position corresponding to 4, 35, so that when the mask 36 is placed on the substrate 31, the LIPs 33, 34, 35 are formed in the openings 37, 3 as shown in FIG.
It fits in 8,39. Therefore, the mask 36 is LIP3.
The protrusions 3, 34, and 35 prevent the protrusion of the mask 36 from interfering with the application of the second adhesive 44.

Next, by twisting three or more linear wires 42, which are stainless steel wires having a diameter of approximately 20 μm, similar to the coating member 41 used when the first adhesive 40 is applied. The configured coating member 41 holds the second adhesive 44 having a low curing temperature. At this time, a predetermined amount of tensile stress is applied to the coating member 41 in both end directions of the coating member 41. Thereby, the linear member 4
2, that is, the stainless steel wire can be appropriately unraveled, which allows the second adhesive 44 to easily enter between the linear members 42 and the coating. The second adhesive 44 can be reliably held on the member 41.

Next, the coating member 41 holding the second adhesive 44 is placed on a predetermined coating region of the substrate 31, that is, on the opening 43 of the mask 36 at a position slightly separated from the mask 36. Then, by applying a predetermined tensile stress to both ends of the coating member 41, the coating member 41 is held by the coating member 41, that is, is inserted between the linear members 42 and 42. The second adhesive 44 is extruded. Then, in this state, the coating member 4
1 is placed on the opening 43 of the mask 36, and the opening 43
To contact with a predetermined application area through.

Thus, the linear member 42 of the coating member 41 is
And the second adhesive 4 extruded from between the linear member 42
4 comes into contact with the application area, and as shown in FIG.
The second adhesive 44 extruded from between the first linear member 42 and the linear member 42 is applied to a predetermined position on the substrate 31. Then, within the range of the opening 43 of the mask 36, the position where the coating member 41 is brought into contact with the substrate 31, that is, the position where the second adhesive 44 is coated by the coating member 41 is gradually shifted, and the same operation as described above is performed. Adhesive 4 of 2
By repeating the application of No. 4 a plurality of times, it is possible to apply the second adhesive 44 to a range limited by the opening 43 of the mask 36, that is, to a predetermined position where the active chip 32 is mounted, as shown in FIG. it can.

Next, the mask 36 is removed, and the active chip 32 is placed on the second adhesive 44 applied in a predetermined shape.
Is placed and heated to a predetermined temperature to melt and cure the second adhesive 44, and the mounting of the active chip 32 is completed. As described above, the active chip 32 and the LIPs 34, 35, 36 can be mounted on the substrate 31.

As described above, in the above-described element mounting method, the ranges in which the first adhesive 40 and the second adhesive 44 are applied are the openings 37, 3 of the mask 36, respectively.
It is limited to the range of 8, 39, 43. That is, as described above, by arranging a mask having an opening having substantially the same shape and size as the predetermined area where the adhesive is applied on the substrate, the area where the adhesive is applied is the opening of the mask. It can be limited to a range.

Therefore, by using the mask 36 in the liquid coating method according to the present invention, not only in the line width direction of the coating member 41 but also in the longitudinal direction of the coating member 41, the desired coating region can be reliably and accurately formed. First adhesive 40
It is possible to apply the second adhesive 44 and the second adhesive 44, so that the first adhesive 40 and the second adhesive 44 can be applied to a desired application region more reliably and more accurately. Therefore, the fine active chip 32 and the LI
P34, 35, 36 can be mounted in a desired position more reliably and more accurately.

Next, a device transfer method to which the present invention is applied,
The arrangement method and the image display device manufacturing method will be described in detail with reference to the drawings. First, a method of transferring a basic element will be described.

To transfer an element according to the present invention, refer to FIG.
As shown in (a), an adhesive layer 102 is formed on a base substrate 101 serving as a supply source, and a plurality of elements 103 are formed thereon.
To form an array.

Here, by using, for example, an adhesive resin having a relatively small adhesive force for the adhesive layer 102, it is possible to easily transfer it to another substrate.

Further, the element 103 can be applied to any element, and if it is exemplified, a light emitting element, a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element. An element, a micro magnetic element, a micro optical element, etc. can be mentioned.

Next, as shown in FIG. 25B, a temporary holding substrate (first substrate) 104 which faces the base substrate 101 and serves as a bridge for transfer is pressure-bonded and necessary on the temporary holding substrate 104. Only the proper element 103a is copied. The element 103 to be transferred is provided on the temporary holding substrate 104.
The adhesive layer 105 is selectively formed in correspondence with a, and the adhesive force of the adhesive layer 105 is applied to the base substrate 10 described above.
If the adhesive force of the adhesive layer 102 on the first layer is made larger, the element 103a can be easily transferred.

Here, when forming the adhesive layer 105,
The liquid application method shown in FIGS. 1 to 8 is used. That is, the adhesive is held by, for example, immersing the coating member formed by twisting a predetermined number of linear members in the adhesive. At this time, a predetermined amount of tensile stress is applied to the coating member 3 in both end directions of the coating member 3.

Next, the coating member holding the adhesive is placed at a position slightly above the temporary holding substrate 104 above the predetermined position on the temporary holding substrate 104. Then, by applying a predetermined tensile stress to both ends of the coating member, the adhesive held by the coating member 3, that is, the adhesive that has entered between the linear members is pushed out. Then, in this state, the application member is brought into contact with a predetermined position on the temporary holding substrate 104 so that the adhesive extruded from between the linear members of the application member is moved to a predetermined position on the temporary holding substrate 104. Apply on site and let dry. As described above, the adhesive layer 105 can be formed.

FIG. 25C shows a state in which the temporary holding substrate 104 is peeled off from the base substrate 101, and the element 103a is transferred onto the adhesive layer 105 which is selectively formed.

Next, as shown in FIG. 25D, the temporary holding substrate 104 on which the element 103a is copied is opposed to the transfer substrate (second substrate) 106 and pressure-bonded to the element 103.
a is transferred to the transfer substrate 106 side. An adhesive resin layer 107 is formed on the entire surface of the transfer substrate 106, and other components 108 are already fixed. The adhesive resin layer 107 is formed, for example, by applying a thermoplastic adhesive resin. Further, the transfer substrate 106 preferably has a light-transmitting property because it is necessary to irradiate the transfer substrate 106 with laser light from the back side of the transfer substrate 106 when transferring the element 103a.

At the time of transfer, after the temporary holding substrate 104 is superposed on the transfer substrate 106, the laser beam L is irradiated from the rear surface side of the transfer substrate 106, and the adhesive resin layer 107 is formed.
Is selectively softened, and then cooled and solidified to fix the element 103a to the adhesive resin layer 107.

For example, as shown in FIG. 26, the transfer substrate 1
Laser light L is irradiated from the back surface side of 06 to selectively heat only the adhesive resin layer 107 in the portion in contact with the element 103a to be transferred. Then, only the heating region H of the adhesive resin layer 107 made of the thermoplastic adhesive resin is softened and the element 103
Exhibits adhesive strength to a. After that, if the irradiation of the laser beam is stopped and the heating region H is cooled and hardened, the element 103
a is fixed to the transfer substrate 106 by the adhesive resin layer 107. At this time, the laser beam is not radiated to the adhesive resin layer 107 for adhesively fixing the other component 108, and therefore,
The adhesive resin layer 107 in this portion is not softened, and the component 108 is not peeled off or displaced.

In the above example, the heating of the adhesive resin layer 107 was carried out by directly irradiating the adhesive resin layer 107 with a laser beam. In the case where it is difficult to directly heat the adhesive resin layer 107 with the laser light due to the transmission of the laser light, as shown in FIG. 27, the laser light L transmitted through the adhesive resin layer 107 is transferred to the element 103a to be transferred. Irradiate,
It is also possible to indirectly heat the adhesive resin layer 107 by heating this.

Laser light L is applied to the element 103a to be transferred.
And heat the portion H in contact with the adhesive resin layer 107, the heat is transferred to the adhesive resin layer 107 and softens it. After that, by cooling and hardening it, the element 103a is fixed to the transfer substrate 106 by the adhesive resin layer 107. Alternatively, when the wiring is formed on the transfer substrate 106, the wiring is heated by laser irradiation, and the adhesive resin layer 1 is formed.
It is also possible to heat 07 indirectly.

FIG. 28 shows an example in which the wiring pattern 109 is formed on the transfer substrate 106 and the element 103a is transferred thereon. Usually, corresponding to the element 103a,
A wiring pattern 109 for connecting the element 103a to the circuit is formed. The wiring pattern 109 is made of a metal such as copper or aluminum and can be easily heated by the laser light L.

Therefore, as shown in FIG. 28, the element 103
The wiring pattern 109 provided corresponding to a is irradiated with the laser beam L to heat the region H corresponding to the element 103a. Then, the heat is transferred to the adhesive resin layer 107 to soften it. The rest is the same, if this is cooled and hardened,
The element 103a is formed by the adhesive resin layer 107,
It is fixed at 6. The heating shown in FIGS. 26 to 28 may be carried out independently, or by irradiation with the laser beam L, these are combined so that the adhesive resin layer 107 is finally heated and softened. May be.

After the element 103a is fixed to the transfer substrate 106 by the adhesive resin layer 107 after being heated and softened by the laser light irradiation and hardened by cooling, the temporary holding substrate 104 is formed.
Peel off. As a result, the element 103a to be transferred is
Is transferred onto the transfer substrate 106, but in this state, the adhesive resin layer 107 is still formed on the entire surface.

Therefore, as shown in FIG. 25 (e), etching is performed to remove the excess portion of the adhesive resin layer 107, and the selective transfer process is completed. As a result, FIG.
It is possible to obtain the transfer substrate 106 in which the element 103a as shown in (f) is selectively transferred between the components 108.

As described above, by using the laser beam, it is possible to heat a very narrow portion of the adhesive resin layer 107 in a short time, and the components 1 which are already adhered to each other are adjacent to each other.
Since heat is not transmitted to the adhesive resin layer 107 to which 08 is fixed, the components 108 adhered adjacent to each other
It does not affect the adhered state of the element 10 and selectively
3a can be transferred. When the entire surface is heated as in the existing technology, there is a possibility that the component 108 moves by flowing to the adhesive resin layer 107 that fixes the other component 108, but this method can avoid such a situation. It is possible.

In the above description, the thermoplastic adhesive resin is taken as an example of the material forming the adhesive resin layer 107, but a thermosetting adhesive resin can also be used to selectively transfer elements by the same method. Is. In the case of the thermosetting adhesive resin, only the portion heated by the irradiation of the laser light is thermoset and the element is fixed.

The above-mentioned transfer method is extremely useful when applied to, for example, element transfer in an active matrix type image display device.

Next, as an application example of the above transfer method, a method of arranging elements by the two-step expansion transfer method and a method of manufacturing an image display device will be described. The method of arranging the elements and the method of manufacturing the image display device of the present example are such that the elements manufactured on the first substrate with a high degree of integration are separated from the state in which the elements are arranged on the first substrate. Two-step enlargement transfer is performed in which the transfer is performed on the temporary holding member, and then the elements held by the temporary holding member are further separated and transferred onto the second substrate. Although the transfer is performed in two steps in this example, the transfer can be performed in three steps or in multiple steps depending on the degree of enlargement in which the elements are arranged apart from each other.

FIG. 29 is a diagram showing the basic steps of the two-step expansion transfer method. First, an element 112 such as a light emitting element is formed on the first substrate 110 shown in FIG.
Are densely formed. By forming the elements densely, the number of elements generated on each substrate can be increased, and the product cost can be reduced. The first substrate 110 is a substrate capable of forming various elements such as a semiconductor wafer, a glass substrate, a quartz glass substrate, a sapphire substrate, and a plastic substrate. Each element 112 is formed directly on the first substrate 110. Alternatively, it may be an array of those formed on another substrate.

Next, as shown in FIG. 29B, each element 112 is transferred from the first substrate 110 to a temporary holding member 111 indicated by a broken line in the drawing, and each element is placed on the temporary holding member 111. 112 is retained. Adjacent element 112 here
Are spaced apart and arranged in a matrix as shown. That is, the elements 112 are transferred so as to widen the distance between the elements in the x direction, but are also transferred so as to widen the distance between the elements in the y direction perpendicular to the x direction. The distance separated at this time is not particularly limited, and as an example, the distance can be set in consideration of the resin portion formation and the electrode pad formation in the subsequent process. The first substrate 1 is placed on the temporary holding member 111.
All the elements on the first substrate 110 may be spaced apart from each other and transferred when the transfer is performed from 10. In this case, the size of the temporary holding member 111 may be equal to or larger than the size obtained by multiplying the number of the elements 112 arranged in a matrix (in the x direction and the y direction) by the distance.
It is also possible to transfer a part of the elements on the first substrate 110 on the temporary holding member 111 so as to be separated from each other.

After such a first transfer step, as shown in FIG.
As shown in (c), since the elements 112 existing on the temporary holding member 111 are separated from each other, the resin surrounding the elements and the electrode pads are formed for each element 112. The resin coating around the element is formed for facilitating the formation of the electrode pad and facilitating the handling in the next second transfer step. As will be described later, the electrode pad is formed after the second transfer step in which the final wiring is continued, so that the electrode pad is formed in a relatively large size so that a wiring defect does not occur at that time. The electrode pads are not shown in FIG. 29 (c). The resin forming chip 114 is formed by covering the periphery of each element 112 with the resin 113. The element 112 is located substantially in the center of the resin-formed chip 114 on a plane, but may be located at a position deviated to one side or a corner side.

Next, as shown in FIG. 29D, the second transfer step is performed. In the second transfer step, the second substrate 11 is arranged so that the elements 112 arranged in a matrix on the temporary holding member 111 are further separated from each other with the resin forming chip 114.
5 is transferred onto.

The above-mentioned element transfer method is applied to this second transfer step, which will be described in detail later.

Also in the second transfer step, the adjacent element 1
The resin-formed chips 114 are separated from each other and arranged in a matrix as shown in the drawing. That is, the elements 112 are transferred so as to widen the elements in the x direction,
Transfer is performed so as to widen the space between the elements also in the y direction perpendicular to the x direction. If the position of the element arranged in the second transfer step corresponds to the pixel of the final product such as an image display device, an integer multiple of the initial pitch between the elements 112 is arranged in the second transfer step. The pitch is 112. Here, from the first substrate 110 to the temporary holding member 1
When the enlargement ratio of the separated pitch in 11 is n and the enlargement ratio of the separated pitch in the second substrate 115 from the temporary holding member 111 is m, the value E of a substantially integer multiple is represented by E = nxm. . The enlargement factors n and m may each be an integer,
Combinations where E is an integer even if it is not an integer (for example, n = 2.4
If m = 5)

A resin-formed chip 114 is formed on the second substrate 115.
Wiring is applied to each element 112 separated from each other. At this time, the wiring is performed while the connection failure is suppressed as much as possible by using the electrode pad or the like previously formed. When the element 112 is a light emitting element such as a light emitting diode,
The liquid crystal control element includes wirings to the p electrode and the n electrode, and in the case of a liquid crystal control element, wirings such as a selection signal line, a voltage line, and an alignment electrode film.

In the two-step enlargement transfer method shown in FIG. 29, the electrode pad and the resin can be hardened by utilizing the separated space after the first transfer, and the wiring is provided after the second transfer. However, wiring is performed while suppressing the connection failure as much as possible by using the electrode pad or the like previously formed. Therefore, the yield of the image display device can be improved. In addition, in the two-step magnifying transfer method of this example, the step of separating the distance between the elements is two steps. Will be reduced. That is, for example, here, the enlargement ratio of the pitch separated from the first substrate 110, 110a in the temporary holding members 111, 111a is 2
(N = 2), and the enlargement ratio of the pitch separated from the temporary holding members 111 and 111a on the second substrate 115 is 2 (m =
If 2), if it is attempted to transfer to an expanded area by one transfer, the final expansion ratio is 4 times 2 × 2, and the squared transfer is performed 16 times, that is, alignment of the first substrate is performed 16 times. Although necessary, in the two-step expansion transfer method of this example, the number of times of alignment is simply 4 times the expansion rate 2 squared in the first transfer step and 4 times the expansion rate 2 squared in the second transfer step. You only need to add 8 times. That is, when the same transfer magnification is intended, (n +
Since m) ² = n ² +2 nm + m ^2, it is always 2n
The number of times of transfer can be reduced by m times. Therefore, the manufacturing process also saves time and cost by the number of times, which is useful especially when the expansion rate is large.

In the two-step enlargement transfer method shown in FIG. 29, the element 112 is, for example, a light emitting element.
The present invention is not limited to this, and other elements such as liquid crystal control element, photoelectric conversion element, piezoelectric element, thin film transistor element, thin film diode element, resistance element, switching element, micro magnetic element, micro optical element, or a portion thereof,
It may be a combination of these.

In the second transfer step, the resin-formed chip is handled and transferred from the temporary holding member to the second substrate. This resin-formed chip will be described with reference to FIGS. 30 and 31.

The resin-formed chip 120 is obtained by hardening the surroundings of the elements 121 arranged apart from each other with the resin 122. Such a resin-formed chip 120 is formed from the temporary holding member to the element 121 on the second substrate. It can be used when transferring The resin-formed chip 120 has a substantially flat plate shape and its main surface has a substantially square shape. The shape of this resin-formed chip 120 is a shape formed by solidifying a resin 122. Specifically, an uncured resin is applied to the entire surface so as to include each element 121, and after hardening this, the edge portion is cured. It is a shape obtained by cutting the substrate by dicing or the like.

Electrode pads 123 and 124 are formed on the front surface side and the back surface side of the substantially plate-shaped resin 122, respectively. The electrode pads 123 and 124 are formed by forming a conductive layer such as a metal layer or a polycrystalline silicon layer, which is a material of the electrode pads 123 and 124, on the entire surface and patterning into a desired electrode shape by a photolithography technique. To be done. These electrode pads 123 and 124 are formed so as to be respectively connected to the p electrode and the n electrode of the element 121 which is a light emitting element, and a via hole or the like is formed in the resin 122 if necessary.

Here, the electrode pads 123 and 124 are formed on the front surface side and the back surface side of the resin-formed chip 120, respectively, but it is also possible to form both electrode pads on one surface, for example, in the case of a thin film transistor. Since there are three electrodes of a source, a gate, and a drain, three or more electrode pads may be formed. The positions of the electrode pads 123 and 124 are deviated from each other on the flat plate in order to prevent the contacts from overlapping even when the contacts are formed from above when the final wiring is formed. The shape of the electrode pads 123, 124 is not limited to the square shape, and may be another shape.

By constructing such a resin-formed chip 120, the periphery of the element 121 is covered with the resin 122, and the electrode pads 123 and 124 can be accurately formed by flattening, and the electrode pad is formed in a wider area than the element 121. 123 and 124 can be extended, and the handling becomes easy when the transfer in the next second transfer step is advanced by the suction jig.
As will be described later, since the final wiring is performed after the second transfer process, the electrode pad 1 having a relatively large size is used.
By using the wirings 23 and 124, wiring defects can be prevented.

Next, FIG. 32 shows the structure of a light emitting element as an example of an element used in the two-step expansion transfer method of this example.
32A is a sectional view of the element, and FIG. 32B is a plan view. This light emitting element is a GaN-based light emitting diode, for example, an element that is crystal-grown on a sapphire substrate. In such a GaN-based light emitting diode, laser ablation occurs due to laser irradiation through the substrate, and film peeling occurs at the interface between the sapphire substrate and the GaN-based growth layer due to the phenomenon that nitrogen in GaN is vaporized. It has a feature that element isolation can be facilitated.

First, regarding the structure, a hexagonal pyramidal GaN layer 132 selectively grown is formed on the underlying growth layer 131 made of a GaN-based semiconductor layer. An insulating film (not shown) is present on the underlayer growth layer 131, and the hexagonal pyramidal GaN layer 132 has an M-shaped opening in the insulating film.
It is formed by the OCVD method or the like. This GaN layer 13
Reference numeral 2 denotes a pyramid-type growth layer covered with an S plane (1-101 plane) when the main surface of the sapphire substrate used for growth is the C plane, and is a region doped with silicon. The inclined S-plane portion of the GaN layer 132 functions as a clad having a double hetero structure. GaN layer 132
An InGaN layer 133 which is an active layer is formed so as to cover the inclined S-plane, and a magnesium-doped GaN layer 134 is formed on the outside thereof. The magnesium-doped GaN layer 134 also functions as a clad.

In such a light emitting diode, the p electrode 1
35 and the n-electrode 136 are formed. The p-electrode 135 is an N formed on the magnesium-doped GaN layer 134.
It is formed by depositing a metal material such as i / Pt / Au or Ni (Pd) / Pt / Au. The n-electrode 136 is made of Ti / Al / Pt /
It is formed by depositing a metal material such as Au. Note that FIG.
When the n electrode is taken out from the back surface side of the underlayer growth layer 131 as shown in FIG. 4, the formation of the n electrode 136 is not necessary on the front surface side of the underlayer growth layer 131.

The GaN-based light emitting diode having such a structure is an element capable of emitting blue light, and can be peeled off from the sapphire substrate relatively easily by laser ablation, and a laser beam is selectively irradiated. As a result, selective peeling is realized. The GaN-based light emitting diode may have a structure in which an active layer is formed on a flat plate or in a strip shape, or may have a pyramidal structure in which a C plane is formed at an upper end portion. Further, it may be another nitride-based light emitting device, a compound semiconductor device, or the like.

Next, a specific method of arranging the light emitting elements shown in FIG. 29 will be described with reference to FIGS. 33 to 39. As the light emitting element, the GaN-based light emitting diode shown in FIG. 32 is used.

First, as shown in FIG. 33, the first substrate 14
A plurality of light emitting diodes 142 are formed in a matrix on one main surface. The size of the light emitting diode 142 can be about 20 μm. First substrate 141
As the constituent material of (1), a material such as a sapphire substrate having a high transmittance with respect to the wavelength of the laser with which the light emitting diode 142 is irradiated is used. Although the p-electrode and the like are formed in the light-emitting diode 142, the final wiring is not yet formed, and the groove 142g for element isolation is formed, so that the individual light-emitting diodes 142 can be separated. The formation of the groove 142g is performed by reactive ion etching, for example. Such a first substrate 141 is opposed to the temporary holding member 143, and selective transfer is performed as shown in FIG.

A peeling layer 144 and an adhesive layer 145 are formed in two layers on the surface of the temporary holding member 143 facing the first substrate 141. Here, as an example of the temporary holding member 143, a glass substrate, a quartz glass substrate, a plastic substrate, or the like can be used, and the temporary holding member 143 is used.
As an example of the upper release layer 144, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, polyvinyl alcohol: PVA), a polyimide, or the like can be used.
As the adhesive layer 145 of the temporary holding member 143, a layer made of any one of an ultraviolet (UV) curable adhesive, a thermosetting adhesive, and a thermoplastic adhesive can be used. As an example, a quartz glass substrate is used as the temporary holding member 143, a polyimide film of 4 μm is formed as the peeling layer 144, and then a UV curable adhesive as the adhesive layer 145 is formed in approximately 2 parts.
Apply with a thickness of 0 μm.

Adhesive layer 145 of temporary holding member 143
Is adjusted such that the cured region 145s and the uncured region 145y are mixed, and the light emitting diode 142 for selective transfer is positioned in the uncured region 145y. Hardened area 145s and uncured area 145y
For example, the UV curing adhesive may be selectively exposed to UV at a pitch of 200 μm by an exposure machine, and the portion where the light emitting diode 142 is transferred is uncured and the others are cured. Good.

After such alignment, a laser is applied to the light emitting diode 142 at the transfer target position by the first substrate 14
Then, the light emitting diode 142 is separated from the first substrate 141 by laser ablation. Since the GaN-based light-emitting diode 142 decomposes into metallic Ga and nitrogen at the interface with sapphire, it can be peeled off relatively easily. An excimer laser, a harmonic YAG laser, or the like is used as a laser for irradiation.

By the peeling using the laser ablation, the light emitting diode 142 which is selectively irradiated is G
It is separated at the interface between the aN layer and the first substrate 141 and is transferred to the adhesive layer 145 on the opposite side so as to pierce the p electrode portion. Light-emitting diode 1 in a region not irradiated by another laser
No. 42 is the area s where the corresponding adhesive layer 145 is hardened, and is not transferred to the temporary holding member 143 side because the laser is not irradiated. In addition,
In FIG. 33, only one light emitting diode 142 is selectively laser-irradiated, but it is assumed that the light-emitting diode 142 is similarly laser-irradiated in a region separated by n pitches. According to such selective transfer, the light emitting diodes 142 are arranged on the temporary holding member 143 at a distance from those arranged on the first substrate 141.

The light emitting diode 142 is the temporary holding member 1.
While being held by the adhesive layer 145 of 43, the back surface of the light emitting diode 142 is on the n-electrode side (cathode electrode side), and the back surface of the light emitting diode 142 is removed so that there is no resin (adhesive), Since the electrode pad 146 has been cleaned, if the electrode pad 146 is formed as shown in FIG. 34, the electrode pad 146 is electrically connected to the back surface of the light emitting diode 142.

As an example of the cleaning of the adhesive layer 145, the adhesive resin is etched with oxygen plasma and cleaned with UV ozone irradiation. Moreover, when the GaN-based light-emitting diode is peeled off from the first substrate 141 made of a sapphire substrate by a laser, Ga is deposited on the peeled surface, and therefore it is necessary to etch the Ga. It will be done with nitric acid. Then, the electrode pad 146 is patterned. At this time, the electrode pad on the cathode side can be about 60 μm square. The electrode pad 146 is a transparent electrode (ITO, ZnO-based, etc.)
Alternatively, a material such as Ti / Al / Pt / Au is used.
In the case of a transparent electrode, even if the back surface of the light emitting diode is largely covered, the light emission is not interrupted, so the patterning accuracy is rough, a large electrode can be formed, and the patterning process is facilitated.

In FIG. 35, the light emitting diode 142 is transferred from the temporary holding member 143 to the second temporary holding member 147 to form the via hole 150 on the anode electrode (p electrode) side, and then the anode side electrode pad 149 is formed. The state in which the adhesive layer 145 made of resin is formed and diced is shown. As a result of this dicing, the element isolation groove 151 is formed and the light emitting diode 142 is divided into elements. The element isolation groove 151 is formed by a plurality of parallel lines extending vertically and horizontally as a plane pattern for separating the light emitting diodes 142 in a matrix form. The surface of the second temporary holding member 147 faces the bottom of the element isolation groove 151.

A peeling layer 148 is formed on the second temporary holding member 147. The release layer 148 can be formed using, for example, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, PVA), polyimide, or the like. The second temporary holding member 147 is, for example, a so-called dicing sheet in which a UV adhesive material is applied to a plastic substrate, and it is possible to use a material whose adhesive force decreases when UV is irradiated.

When transferring from the first temporary holding member 143 to the second temporary holding member 147, excimer laser is irradiated from the back surface of the temporary holding member 143 having such a peeling layer 144 formed thereon. Thereby, for example, the peeling layer 1
When polyimide is formed as 44, peeling occurs due to ablation of the polyimide at the interface between the polyimide and the quartz substrate, and each light emitting diode 142 is transferred to the second temporary holding member 147 side.

When forming the anode electrode pad 149, the surface of the adhesive layer 145 is etched with oxygen plasma until the surface of the light emitting diode 142 is exposed. First, the via hole 150 can be formed by using an excimer laser, a harmonic YAG laser, or a carbon dioxide gas laser. At this time, the via hole has a diameter of about 3 to 7 μm. The anode side electrode pad is Ni /
It is formed of Pt / Au or the like. In the dicing process, dicing using a normal blade and laser processing using the above laser are performed when a narrow cut having a width of 20 μm or less is required. The cut width depends on the size of the light emitting diode 142 covered with the adhesive layer 145 made of resin in the pixel of the image display device.

Next, the light emitting diode 142 is separated from the second temporary holding member 147 by using mechanical means.
FIG. 36 is a diagram showing that the light emitting diodes 142 arranged on the second temporary holding member 147 are picked up by the suction device 153. Adsorption hole 15 at this time
Reference numeral 5 indicates openings in a matrix at the pixel pitch of the image display device, so that a large number of light emitting diodes 142 can be adsorbed at once.

The opening diameter at this time is, for example, about φ100 μ.
The openings are formed in a matrix with a pitch of 600 μm, and approximately 300 pieces can be adsorbed at once. Adsorption hole 155 at this time
For example, a member manufactured by Ni electroforming or a metal plate 152 such as SUS obtained by etching a hole is used, and a suction chamber 154 is formed inside the suction hole 155 of the metal plate 152. By controlling the suction chamber 154 to a negative pressure, the light emitting diode 1
42 can be adsorbed. The light emitting diode 142 is covered with the adhesive layer 145 made of resin at this stage, and the upper surface thereof is substantially flattened.
The selective adsorption by 3 can be easily promoted.

FIG. 37 is a diagram showing the transfer of the light emitting diode 142 to the second substrate 160. That is,
An adhesive layer 156 is applied to the second substrate 160 in advance when it is mounted on the second substrate 160, and the adhesive layer 156 on the lower surface of the light emitting diode 142 is cured to fix the light emitting diode 142 to the second substrate 160. To arrange. At the time of this mounting, the adsorption chamber 154 of the adsorption device 153 is in a high pressure state, and the adsorbed state of the adsorption device 153 and the light emitting diode 142 is released.

Here, the adhesive layer 156 is composed of a thermosetting adhesive, a thermoplastic adhesive, or the like. Then, when forming the adhesive layer, the liquid application method shown in FIGS. 9 to 11 is applied. That is, the adhesive is held by, for example, immersing the coating member formed by twisting a predetermined number of linear members in the adhesive. At this time, a predetermined amount of tensile stress is applied to the application member in both end directions of the application member.

Next, the application member holding the adhesive is slightly removed from the second substrate 160 above the predetermined application region of the second substrate 160, that is, above the row of the second substrate 160 where the light emitting diodes 142 are mounted. Place in a separated position. Then, by applying a predetermined tensile stress to both ends of the coating member, the adhesive held by the coating member, that is, the adhesive that has entered between the linear members is pushed out. Then, in this state, the adhesive is extruded from between the linear members of the applying member by bringing the applying member into contact with a predetermined position of the second substrate 160, that is, a row on which the light emitting diodes 142 are mounted. Is applied to a predetermined position on the second substrate 160 and dried. As described above, the adhesive layer 156 is formed.

The position where the light emitting diode 142 is arranged is farther from the arrangement on the temporary holding members 143 and 147. At that time, the energy (laser light 173) for curing the resin of the adhesive layer 156 is applied to the second substrate 16
It is supplied from the back side of 0.

As described above, only the adhesive layer 156 of the portion corresponding to the resin-formed chip (the light emitting diode 142 and the adhesive layer 145) which is irradiated with the laser beam 173 from the back surface of the second substrate 160 and transferred. To heat. As a result, when the adhesive layer 156 is a thermoplastic adhesive, the adhesive layer 156 at that portion is softened and then cooled and cured to fix the resin-formed chip on the second substrate 160. Similarly, when the adhesive layer 156 is a thermosetting adhesive, the adhesive layer 15 in the portion irradiated with the laser beam 173 is also used.
Only 6 is cured, and the resin-formed chip is fixed on the second substrate 160.

Further, the electrode layer 157 which also functions as a shadow mask is provided on the second substrate 160, and the laser beam 17 is formed.
The electrode layer 157 may be heated by irradiating 3 and the adhesive layer 156 may be indirectly heated.

Particularly, if the black chrome layer 158 is formed on the surface of the electrode layer 157 on the screen side, that is, the surface on which the viewer of the image display device is present, the contrast of the image can be improved and the black chrome layer can be improved. Laser beam 173 selectively irradiated with an increased energy absorption rate at 158
Thus, the adhesive layer 156 can be efficiently heated.

FIG. 38 shows a light emitting diode 1 of three colors of RGB.
It is a figure which shows the state which arranged 42, 161, 162 on the 2nd board | substrate 160, and applied the insulating layer 159. When the suction device 153 used in FIGS. 36 and 37 is used as it is, and the mounting position on the second substrate 160 is simply shifted to the position of that color, the pixel pitch is fixed and the pixel consisting of three colors is formed. Can be formed. As the insulating layer 159, a transparent epoxy adhesive, a UV curable adhesive, polyimide or the like can be used. Three-color light emitting diode 1
42, 161, and 162 do not necessarily have to have the same shape. In FIG. 38, the red light emitting diode 161 has a structure that does not have a hexagonal pyramidal GaN layer, and
42 and 162 are different from each other in shape, but at this stage, the light emitting diodes 142, 161, and 162 are already covered with the adhesive layer 145 made of resin as a resin-formed chip, and the element structure is different. The same handling is realized.

FIG. 39 is a diagram showing a wiring forming process. Openings 165, 166, 167, 168 in the insulating layer 159,
169 and 170 are formed, and the light emitting diodes 142 and 16 are formed.
Wiring 16 for connecting the anode and cathode electrode pads 1 and 162 to the wiring electrode layer 157 of the second substrate 160
It is the figure which formed 3, 164, 171. The opening formed at this time, that is, the via hole is the light emitting diode 14
Since the area of the electrode pads 146, 149 of 2, 161, 162 is large, the shape of the via hole is large, and the positional accuracy of the via hole can be formed with coarser accuracy than the via hole formed directly in each light emitting diode. At this time, the via holes can be formed with a diameter of about 20 μm for the electrode pads 146 and 149 having a size of about 60 μm.

The depth of the via hole has three kinds of depths, one for connecting to the wiring substrate, one for connecting to the anode electrode, and one for connecting to the cathode electrode. Therefore, the optimum depth can be controlled by the number of laser pulses. To open. After that, a protective layer is formed on the wiring to complete the panel of the image display device.
The protective layer at this time is similar to the insulating layer 159 in FIG. Materials such as clear epoxy adhesive can be used. This protective layer is heat-cured to completely cover the wiring. After that, the driver IC is connected from the wiring at the end of the panel to manufacture the drive panel.

In the light emitting element arranging method as described above, the distance between the elements is already increased at the time when the light emitting diodes 142 are held by the temporary holding member 143, and the expanded spacing is used to make a comparative advantage. Size electrode pad 14
6, 149 and the like can be provided. Wiring is performed using the electrode pads 146 and 149 having a relatively large size, so that the wiring can be easily formed even when the size of the final device is significantly larger than the element size.

Further, in the method of arranging the light emitting elements of this example, the periphery of the light emitting elements is covered with the hardened adhesive layer 145 so that the electrode pads 146 and 149 can be accurately formed by flattening and the area is wider than the elements. Electrode pad 14
6, 149 can be extended, and handling is facilitated when the transfer in the next second transfer step is advanced by the suction jig. Also,
In order to transfer the light emitting diode 142 to the temporary holding member 143, the GaN-based material is a metallic Ga at the interface with sapphire.
By utilizing the fact that it decomposes into nitrogen, it can be peeled off relatively easily and transferred reliably.

Further, at the time of transferring the resin-formed chip to the second substrate (second transfer process), the adhesive layer 15 is formed on the second substrate 160 by using a coating member formed by bundling a plurality of linear members.
Since 6 is formed, the adhesive layer 156 can be accurately and reliably formed in a very small area, that is, a minute area, and as a result, the resin-formed chip can be accurately and surely transferred. You can

[0172]

The liquid application method according to the present invention is a liquid application method for applying a liquid to a substrate, and a step of holding the liquid in an application member formed by bundling a plurality of linear members, And a step of pushing the liquid out of the coating member by applying a tensile stress to both ends of the coating member holding the liquid, and a step of bringing the liquid pushed out of the coating member into contact with the substrate. .

In the liquid coating method according to the present invention as described above, the coating member is held by the linear coating member formed by bundling the linear members, and the liquid is brought into contact with the substrate. Since the liquid is applied, the liquid can be reliably and accurately applied to a region having a line width and a very small area, that is, a minute region.

A device mounting method according to the present invention is a device mounting method for mounting a device on a substrate, which comprises an adhesive applying step of applying an adhesive for fixing the device to the substrate.
A mounting step of mounting the element on the adhesive applied on the substrate, wherein the adhesive applying step holds the adhesive on an applying member formed by bundling a plurality of linear members. A step of extruding the adhesive from the application member by applying tensile stress to both ends of the application member holding the adhesive, and a step of bringing the adhesive extruded from the application member into contact with the substrate. Is to have.

In the device mounting method according to the present invention as described above, since the adhesive for fixing the device to the substrate is applied by using the above-mentioned liquid application method, a region having a very small area, such as a line width, is applied. That is, the element can be mounted reliably and accurately even in a minute area.

The element transfer method according to the present invention is an element transfer method for transferring the elements arranged on the first substrate onto the second substrate, and comprises a step of removing the elements to a take-out head. A mounting step of mounting the element taken out by the take-out head on the second substrate,
The mounting step includes an adhesive application step of applying an adhesive agent for fixing the element to the second substrate, and a step of mounting the element on the adhesive agent applied on the second substrate. Having the adhesive applying step, a step of holding the adhesive in an applying member formed by bundling a plurality of linear members, and applying a tensile stress to both ends of the applying member holding the adhesive It comprises a step of extruding the adhesive from the coating member and a step of bringing the adhesive extruded from the coating member into contact with the second substrate.

In the device transfer method according to the present invention as described above, since the device transfer is performed by using the above-mentioned liquid coating method and device mounting method, it is possible to transfer a very small area, that is, a minute area. However, the element can be transferred reliably and accurately.

The element arranging method according to the present invention is the element arranging method of rearranging a plurality of elements arranged on the first substrate on the second substrate, wherein the elements are arranged on the first substrate. A first transfer step in which the elements are transferred so as to be separated from the arrayed state, and the elements are held in the first temporary holding member; and the first temporary holding member holds the elements. A step of hardening the element with a resin, a step of dicing the resin to separate each element, and a step of further separating the element held by the first temporary holding member and hardened with the resin by the second A second transfer step of transferring onto the substrate, the second transfer step, the taking out step of transferring the element to a take-out head, and the element taken out by the take-out head onto the second substrate. It has a mounting process for mounting and The step includes an adhesive applying step of applying an adhesive for fixing the element to the second substrate, and a step of mounting the element on the adhesive applied on the second substrate. The adhesive applying step includes a step of holding the adhesive on an applying member formed by bundling a plurality of linear members, and applying a tensile stress to both ends of the applying member holding the adhesive to apply the applying member. And a step of bringing the adhesive agent extruded from the coating member into contact with the second substrate.

In the element arranging method according to the present invention as described above, since the element transfer can be performed accurately and reliably by using the above-mentioned element transfer method, the distance between the elements can be increased. Transfer can be performed smoothly.

The method of manufacturing the image display device according to the present invention is
In a method of manufacturing an image display device in which light emitting elements are arranged in a matrix, the light emitting elements are transferred so that the light emitting elements are separated from the first light emitting elements arranged on the first substrate. A first transfer step of holding the light emitting element on a temporary holding member, a step of hardening the light emitting element held on the first temporary holding member with a resin, and dicing the resin to separate each light emitting element. And a second transfer step of further separating the light emitting element held by the first temporary holding member and hardened with a resin and transferring the light emitting element onto the second substrate. The steps include a take-out step of moving the light-emitting element to a take-out head and a mounting step of mounting the light-emitting element taken out by the take-out head on the second substrate, and the mounting step is the light-emitting element. The above Adhesive applying step of applying an adhesive that adheres to the substrate of, and a step of mounting the light emitting element on the adhesive applied on the second substrate, the adhesive applying step, A step of holding the adhesive on an application member formed by bundling a plurality of linear members, and a step of extruding the adhesive from the application member by applying tensile stress to both ends of the application member holding the adhesive. And a step of bringing the adhesive extruded from the application member into contact with the second substrate.

According to the method for manufacturing an image display device of the present invention as described above, a light emitting element manufactured in a dense state, that is, by performing fine processing with a high degree of integration, is prepared by applying the liquid applying method, the element. The mounting method, the element transfer method, and the element arranging method can be applied to accurately separate and rearrange them. Therefore, a highly accurate image display device can be manufactured with high productivity.

[Brief description of drawings]

FIG. 1 is a perspective view showing a state in which a liquid is applied to a predetermined application area on a substrate.

FIG. 2 is a side view showing an example of a coating member.

FIG. 3 is a cross-sectional view showing a state in which a coating member is dipped in a liquid.

FIG. 4 is a side view showing a state in which a liquid is sprayed onto an application member using a sprayer.

FIG. 5 is a side view showing a state in which a liquid is held on a coating member.

FIG. 6 is a side view showing a state in which the liquid held by the coating member is pushed out.

FIG. 7 is a perspective view showing a state where the coating member is brought into contact with a predetermined position of the substrate.

FIG. 8 is a plan view showing a state in which a liquid is applied to a predetermined position on a substrate.

FIG. 9 is a plan view showing a state in which a passive matrix of LIP is formed.

FIG. 10 is a plan view showing a state where the coating member is brought into contact with a predetermined position on the substrate.

FIG. 11 is a plan view showing a state in which an adhesive is applied at a predetermined position on the substrate.

FIG. 12 is a perspective view showing a state where the liquid is applied to a predetermined application region on the substrate.

FIG. 13 is a perspective view showing a state of being laminated on a mask substrate having a predetermined opening.

FIG. 14 is a cross-sectional view showing a state in which an adhesive agent held by a coating member is extruded.

FIG. 15 is a plan view showing a state in which an adhesive is applied to a predetermined position on the substrate.

FIG. 16 is a plan view showing a state in which an adhesive is applied at a predetermined position on the substrate.

FIG. 17 shows an active chip and a red LIP on a substrate,
It is a top view showing the state where green LIP34 and blue LIP were mounted.

FIG. 18 is a plan view showing a state in which a mask is arranged on a substrate.

FIG. 19 is a side view showing an example of a coating member.

FIG. 20 is a plan view showing a state in which the first adhesive is applied to predetermined positions on the substrate.

FIG. 21 is a plan view showing a state in which the first adhesive is applied to predetermined positions on the substrate.

FIG. 22 is a cross-sectional view showing a state in which a mask is arranged on a substrate.

FIG. 23 is a plan view showing a state in which a second adhesive is applied to a predetermined position on the substrate.

FIG. 24 is a plan view showing a state in which a second adhesive is applied to a predetermined position on the substrate.

FIG. 25 is a schematic sectional view showing an example of a transfer process according to the transfer method of the present invention.

FIG. 26 is a schematic view showing a state where an adhesive resin layer is heated by laser light.

FIG. 27 is a schematic diagram showing how an element is heated by laser light.

FIG. 28 is a schematic diagram showing how a wiring pattern is heated by laser light.

FIG. 29 is a schematic view showing an arrangement method of elements.

FIG. 30 is a schematic perspective view of a resin-formed chip.

FIG. 31 is a schematic plan view of a resin light-view picture chip.

32A and 32B are diagrams showing an example of a light emitting element, wherein FIG. 32A is a sectional view and FIG. 32B is a plan view.

FIG. 33 is a schematic sectional view showing a first transfer step.

FIG. 34 is a schematic sectional view showing an electrode pad forming step.

FIG. 35 is a schematic cross-sectional view showing the electrode pad forming step after the transfer to the second temporary holding member.

FIG. 36 is a schematic sectional view showing an adsorption step.

FIG. 37 is a schematic sectional view showing a second transfer step.

FIG. 38 is a schematic sectional view showing a step of forming an insulating layer.

FIG. 39 is a schematic cross-sectional view showing a wiring forming step.

FIG. 40 is a cross-sectional view illustrating the principle of screen printing.

[Explanation of symbols]

1 substrate 2 Application area 3 Application member 4 linear members 5 liquid 11 board 12 LIP 13 Adhesive 21 board 23 Adhesive 24 opening 25 masks

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 33/00 H01L 33/00 NF term (reference) 4D075 AC08 AC84 AC95 DA06 DB13 DB31 DC21 EA17 EA19 EA21 EA35 EB16 EB19 EB39 EB42 5F041 AA14 CA34 CA49 CA53 CA57 CA64 CA73 CA82 CA88 DA02 DA13 DA20 DA35 DB08 FF06 5F047 FA21

Claims (29)

[Claims] 1. A method for applying a liquid to a base material, the method comprising the steps of holding the liquid in an application member formed by bundling a plurality of linear members, and the both end directions of the application member holding the liquid. A method of applying a liquid, comprising: a step of extruding the liquid from the application member by applying tensile stress to the substrate; and a step of bringing the liquid extruded from the application member into contact with the substrate. 2. The method for applying a liquid according to claim 1, wherein the linear member has corrosion resistance to the liquid. 3. The liquid applying method according to claim 1, wherein the linear member is made of a metal material. 4. The liquid application method according to claim 3, wherein the metal material is tantalum. 5. The liquid coating method according to claim 3, wherein the metal material is stainless steel. 6. The liquid application method according to claim 1, wherein the linear member is made of silk thread. 7. The liquid coating method according to claim 1, wherein the coating member is formed by twisting the plurality of linear members. 8. The liquid application method according to claim 1, wherein the liquid is an adhesive. 9. The liquid application method according to claim 1, wherein the adhesive is a thermoplastic adhesive. 10. The linear member is formed by evaporating a solvent from an adhesive having infinite swelling property, the liquid is a solvent of the adhesive, and the liquid is retained on the coating member. And a step of bringing the coating member holding the liquid into contact with the substrate, and a step of swelling and dissolving the coating member in a state where the coating member is in contact with the substrate. Item 2. A method for applying a liquid according to item 1. 11. The liquid coating method according to claim 1, wherein the liquid is brought into contact with the substrate by bringing the coating member in a state where the liquid is pushed out into contact with the substrate. 12. A method of bringing the liquid into contact with the substrate by arranging a mask having an opening on the base material, and arranging a coating member in a state where the liquid is extruded into the opening of the mask. The liquid application method according to claim 1, which is characterized in that. 13. An element mounting method for mounting an element on a substrate, comprising: an adhesive application step of applying an adhesive for fixing the element to the substrate; and an adhesive application step applied on the substrate. And a mounting step of mounting the element, wherein the adhesive applying step includes a step of holding the adhesive on an applying member formed by bundling a plurality of linear members, and a step of applying the applying member holding the adhesive. A method for mounting an element, comprising: a step of extruding the adhesive from the coating member by applying a tensile stress in both end directions; and a step of bringing the adhesive extruded from the coating member into contact with the substrate. . 14. The method of mounting an element according to claim 13, wherein the linear member has corrosion resistance to the adhesive. 15. The element mounting method according to claim 13, wherein the linear member is made of a metal material. 16. The method of mounting an element according to claim 13, wherein the metal material is tantalum. 17. The element mounting method according to claim 13, wherein the metal material is stainless steel. 18. The element mounting method according to claim 13, wherein the linear member is made of silk thread. 19. The coating member is formed by twisting the plurality of linear members.
3. The mounting method of the element according to 3. 20. The element mounting method according to claim 13, wherein the adhesive is a thermoplastic adhesive. 21. The element mounting method according to claim 20, wherein a predetermined heat treatment is performed in the mounting step. 22. The method of mounting an element according to claim 13, wherein the adhesive is brought into contact with the substrate by bringing an application member in a state where the adhesive is extruded onto the substrate. 23. The adhesive is brought into contact with the substrate by disposing a mask having an opening on the base material and disposing an application member in a state where the adhesive is extruded in the opening of the mask. 14. The method for mounting an element according to claim 13, wherein: 24. A device transfer method for transferring devices arranged on a first substrate onto a second substrate, the process comprising transferring the devices to a removal head, and removing the devices from the removal head. There is a mounting step of mounting the element on the second substrate, the mounting step, an adhesive applying step of applying an adhesive for fixing the element to the second substrate, the second A step of mounting the element on the adhesive applied on a substrate, the adhesive applying step, a step of holding the adhesive in an application member formed by bundling a plurality of linear members, A step of extruding the adhesive from the application member by applying a tensile stress to both ends of the application member holding the adhesive, and a step of bringing the adhesive extruded from the application member into contact with the second substrate. With Device transfer method according to claim and. 25. An element arranging method for rearranging a plurality of elements arranged on a first substrate on a second substrate, wherein the element is separated from the state in which the elements are arranged on the first substrate. Transferring the element so as to be in the state described above and holding the element on the first temporary holding member, and a step of hardening the element held on the first temporary holding member with resin. And a step of dicing the resin to separate each element, and a step of further separating the element held by the first temporary holding member and hardened with the resin and transferring the element onto the second substrate. A transfer step, and the second transfer step includes a take-out step of transferring the element to a take-out head, and a mounting step of mounting the element taken out by the take-out head on the second substrate. In the mounting step, An adhesive application step of applying an adhesive that adheres to the second substrate, and a step of mounting the element on the adhesive applied on the second substrate, the adhesive applying step, A step of holding the adhesive on a coating member formed by bundling a plurality of linear members, and a step of pushing the adhesive out of the coating member by applying tensile stress to both ends of the coating member holding the adhesive. And a step of bringing the adhesive extruded from the coating member into contact with the second substrate, the element arranging method. 26. The distance to be separated in the first transfer step is approximately an integral multiple of the pitch of the elements arranged on the first substrate, and the distance to be separated in the second transfer step is the first distance. 26. The element arranging method according to claim 25, wherein the pitch is substantially an integer multiple of the pitch of the elements arranged on the temporary holding member in the transfer step. 27. The device arraying method according to claim 25, wherein the device is a semiconductor device using a nitride semiconductor. 28. The element is a light emitting element, a liquid crystal control element,
26. The array of elements according to claim 25, which is an element selected from a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element, a micro magnetic element, and a micro optical element, or a portion thereof. Method. 29. A method of manufacturing an image display device in which light emitting elements are arranged in a matrix, wherein the light emitting elements are transferred so as to be separated from a state in which the light emitting elements are arranged on the first substrate. Then, a first transfer step of holding the light emitting element on the first temporary holding member, a step of hardening the light emitting element held on the first temporary holding member with a resin, and dicing the resin. And a second transfer step of separating the light emitting elements for each light emitting element, and further transferring the light emitting elements held by the first temporary holding member and fixed by the resin to the second substrate while further separating them. The second transfer step includes a take-out step of moving the light-emitting element to a take-out head, and a mounting step of mounting the light-emitting element taken out by the take-out head on the second substrate. Is above An adhesive application step of applying an adhesive agent for fixing the light emitting element to the second substrate; and a step of mounting the light emitting element on the adhesive agent applied on the second substrate, The adhesive applying step includes a step of holding the adhesive on an applying member formed by bundling a plurality of linear members, and a tensile stress is applied to both ends of the applying member holding the adhesive to remove the adhesive from the applying member. A method of manufacturing an image display device, comprising: a step of extruding an adhesive; and a step of bringing the adhesive extruded from the coating member into contact with the second substrate.