JP4214444B2 - Method for manufacturing light emitting element and method for manufacturing light emitting device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a light emitting element suitable for an image display device and the like, and a method for manufacturing a light emitting device.
[0002]
[Prior art]
Conventionally, a light emitting die auto (LED) is used for a light source or a pixel of an image display device. For example, as shown in FIG. 11, after the LED module 2 is two-dimensionally arranged and fixed on the substrate 1, the anode electrode 3 and the cathode electrode 4 of each LED module 2 are bonded to the substrate by wire bonding or soldering. 1 is connected to the wiring.
[0003]
In this image display device 10, an LED chip cut out from a wafer is used as an LED module 2 as one pixel, and a screen of several hundred thousand pixels, for example, is formed. It cannot be increased.
[0004]
As a semiconductor light emitting element constituting such an LED, for example, a low-temperature buffer layer and an n-side contact layer made of Si-doped GaN are formed on the entire surface of a sapphire substrate, and an Si-doped GaN n is formed thereon. A device is known in which a side cladding layer, an active layer made of Si-doped InGaN, a p-side cladding layer made of Mg-doped AlGaN, and a p-side contact layer made of Mg-doped GaN are stacked. As the LED having such a structure, blue and green LEDs having an emission wavelength of 450 nm to 530 nm are known.
[0005]
[Course to Invention]
In comparison with the image display device shown in FIG. 11, the applicant of the present application is a display device in which the area occupied by a semiconductor light emitting element per unit area is reduced, the wiring is simplified, and the cost is significantly reduced. -67238 etc. have already been proposed.
[0006]
This display device (hereinafter referred to as the prior application invention) has a structure shown in FIG. That is, the GaN-based semiconductor light-emitting elements 32 embedded in the first insulating layer 39 made of epoxy resin are arranged at a predetermined pitch on the surface of the transparent substrate 50 serving as a display panel, and fixed with the transparent adhesive 46. In this case, as shown in FIG. 17 (13), the resin chip 40 in which the semiconductor light emitting element 32 is embedded on the laminated wiring of the chromium layer 48 and the electrode layer 47 provided on the upper surface of the substrate 50 is fixed with a transparent adhesive 46. After that, an epoxy resin solution is applied so as to cover the entire surface, dried and heat-cured to form a second insulating layer 49 made of an epoxy resin.
[0007]
In this state, the lead electrodes 18d and 19d of the internal semiconductor light emitting element 32 are driven on the substrate 50 by the conductive layers 54 and 56 through the connection holes 55, 56 and 57 formed in the second insulating layer 49. Connect to a control circuit (not shown).
[0008]
In this manner, with the semiconductor light emitting element 32 embedded in the first insulating layer 39, the semiconductor light emitting element 32 is arranged and fixed on the surface of the substrate 50 serving as the panel surface at a predetermined interval, and these are covered with the second insulating layer 49. Since the electrodes 18d and 19d are drawn out, the area occupied by the semiconductor light emitting element per unit area of the display device can be reduced, the wiring can be simplified, and the cost can be drastically reduced.
[0009]
Moreover, by embedding the GaN-based semiconductor light emitting device 32 having a minute size and shape in the first insulating layer 39 to make the semiconductor light emitting device 32 with a large apparent size, handling can be facilitated and the first insulating layer 39 Since the lead electrodes 18d and 19d having a relatively large area can be provided on the upper surface, there is an advantage that the electrodes can be easily drawn from the second insulating layer 49.
[0010]
The GaN-based semiconductor light-emitting element (LED) 32 has a structure shown in the cross-sectional view of FIG. 12A and the plan view of FIG. 12B. The resin chip 40 in which the light-emitting element is embedded is as follows. FIG. 13A is a perspective view, and FIG. 13B is a plan view. In the figure, 11 is an underlying growth layer, 12 is an n-type GaN layer, 13 is an InGaN active layer, 14 is a p-type GaN layer, and 15 is a p-electrode.
[0011]
The semiconductor light emitting element 32 may be any element as long as it emits light by recombination of electrons and holes as carriers when a forward current is injected into a junction surface between a p-type semiconductor and an n-type semiconductor. The constituent material of the light emitting element is not particularly limited. Examples of such a light-emitting semiconductor material include gallium nitride (GaN) for blue light emission, gallium phosphide (GaP) for green light emission, gallium phosphide (GaAsP) for red light emission, and aluminum gallium arsenide (AlGaAs). ) Or other known semiconductors such as zinc selenide (ZnSe) and silicon carbide (SiC).
[0012]
Compound semiconductors as materials for such various semiconductor light emitting devices can be produced by metal organic compound vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), etc. However, as long as hydration is possible, it is desirable to make the dimensions as small as possible. Such a fine semiconductor light emitting device can be obtained relatively easily by selectively growing a compound semiconductor on, for example, a sapphire substrate, rather than cutting out from a compound semiconductor wafer into a chip shape. By this selective crystal growth, it is possible to obtain a semiconductor light emitting device having a size of one side of the lower end surface of about 100 to 200 μm or less, for example, about 10 to 50 μm. If necessary, a processing for adjusting the three-dimensional shape may be performed after crystal growth.
[0013]
Then, for example, Ni / Au is vapor-deposited to form a p-electrode on the p-type semiconductor of this small semiconductor light emitting device, and for example, Ti / Au is vapor-deposited to form an n-electrode on the n-type semiconductor as necessary. To do. Although the minute semiconductor light emitting element on which these electrodes are formed may be arranged and fixed as it is on the substrate surface, the semiconductor light emitting element is particularly minutely shaped and covered with the first insulating layer 39 as described above. Thus, handling can be facilitated by increasing the apparent size.
[0014]
Further, the semiconductor light emitting element 32 arranged and fixed on the transparent substrate surface can improve the luminance of the emitted light 30 toward the substrate surface side, that is, the lower end surface side of the semiconductor light emitting element, depending on its shape. Of the light emitted from the light emitting region (active layer) of the semiconductor light emitting device 32, the light traveling upward from the light emitting region can be light directed toward the lower end surface with the electrode surface at the upper end as a reflecting surface, but is perpendicular to the lower end surface. Since the light traveling toward the side surface is unlikely to be directed toward the lower end surface even when reflected by the side surface, the semiconductor light emitting element desirably has an inclined surface having an angle of 45 ± 20 degrees with the lower end surface. By providing the reflecting surface on such an inclined surface, the light emitting component directed to the side can be reflected, and the light can be effectively directed toward the lower end surface.
[0015]
This inclined surface may be a single-sided slope, a double-sided slope, or a square slope. Furthermore, it is desirable that the semiconductor light emitting element has a pyramid shape or a truncated pyramid shape. In the pyramid, the truncated pyramid, and the polygonal truncated pyramid, the upper surface is also a reflecting surface, so that the light emission of the semiconductor light emitting element can be more effectively directed toward the lower end surface. The pyramid or the truncated pyramid here includes various pyramids such as a triangular pyramid, a quadrangular pyramid, a pentagonal pyramid, a hexagonal pyramid, a polygonal pyramid approximated to a cone, and a pyramid corresponding to them.
[0016]
In addition, the material used for the insulating layers such as the first insulating layer 39 and the second insulating layer 49 may be either organic or inorganic, and the type and formation method are not particularly limited, but inorganic SiO₂And Si_ThreeN_FourIs employed, a CVD method (chemical vapor deposition method) or a vapor deposition or sputtering method is applied. However, when a polymer compound such as an epoxy resin, a polyimide resin, or a synthetic rubber that is an organic material is employed, Even when the substrate surface has a large area, it can be easily formed by a simple coating method, and the cost of the display device can be reduced. As the insulating layer by coating, a glass film by a spin-on-glass method can also be used.
[0017]
In order to manufacture the light emitting element 32 and the light emitting device in which the light emitting element 32 is embedded, for example, as shown in FIG. 14A, first, a buffer such as A1 or GaN is formed on the (0001) surface of the sapphire substrate 31 at a temperature of 500 ° C. A layer (not shown) is grown, followed by an n-type gallium nitride (GaN: Si) layer 11 doped with silicon at 1000.degree.
[0018]
Next, as shown in FIG. 14 (2), SiO 2 is formed on the gallium nitride layer 11.₂Alternatively, a SiN mask 43 is formed, and an n-type gallium nitride doped with silicon is grown at 1000 ° C. in the opening 43a as shown in FIG. A GaN: Si) layer 12 is formed.
[0019]
  Next, as shown in FIG. 14 (4), an active layer 13 made of InGaN is formed on the (1-101) plane of this hexagonal pyramid and an inclined plane equivalent thereto by lowering the growth temperature. After growing the p-type gallium nitride (GaN: Mg) layer 14 doped with magnesium, as shown in FIG. 15 (5), Ni / Au is applied to the p-type (GaN: Mg) layer 14 in the surface layer portion. A p-electrode 15 that also serves as a light reflecting surface is formed by vapor deposition. The mask on the upper surface of the underlying layer (GaN: Si) 1143An n-electrode (not shown) may be formed by opening an opening and depositing Ti / Au, but such an n-electrode is not formed here.
[0020]
The semiconductor light emitting element 32 formed in this way is shown in FIG. 15 (6) (however, for the sake of simplicity, the light emitting element 32 is also schematically shown in the subsequent drawings), FIG. After forming the separation groove 32g by cutting the cross-sectional shape shown in (a) by RIE (Reactive Ion Etching), the separation groove 32g is peeled off, and further embedded in the first insulating layer 39 provided on the support 33, Peel and transfer onto the support 33.
[0021]
Here, the support 33 is formed by forming two layers of the release layer 34 and the first insulating layer (adhesive layer) 39 on the surface facing the substrate 31 as a temporary holding member. The temporary holding member is made of, for example, a glass substrate, a quartz glass substrate, a plastic substrate, and the like, and the release layer 34 is made of, for example, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, polyvinyl alcohol), polyimide, or the like. The adhesive layer 39 may be formed of any one of an ultraviolet (UV) curable adhesive, a thermosetting adhesive, and a thermoplastic adhesive. As an example, a quartz glass substrate is used as the temporary holding member 31, and a polyimide film (4 μm thickness) is formed thereon as the release layer 34, and a UV curable adhesive (about 20 μm thickness) is formed as the adhesive layer 39. .
[0022]
The adhesive 39 of the temporary holding member 33 is adjusted so that the cured region 39s and the uncured region 39y are mixed, and is aligned so that the light emitting element 32 to be selectively transferred to the uncured region 39y is located. . That is, the adjustment so that the cured region 39s and the uncured region 39y are mixed is, for example, selectively exposing the UV curable adhesive to UV (ultraviolet rays) at a pitch of 200 μm with an exposure device, and transferring the light emitting element 32. However, it is uncured, but other than that, it may be cured. In such a state, the laser light 36 is selectively irradiated from the back surface of the substrate 31 to the light emitting element 32 at the transfer target position, and the light emitting element 32 is peeled off from the substrate 31 by laser ablation.
[0023]
That is, since the GaN-based light emitting diode 32 is decomposed into metallic Ga and nitrogen at the interface with the sapphire substrate 31, it can be removed relatively easily. Here, an excimer laser, a harmonic YAG laser, or the like is used as the laser light 36 to be irradiated.
[0024]
18 (1) and 18 (2) are enlarged views showing the peeling state using this laser ablation. The light emitting element 32 for selective irradiation of the laser light 36 is an interface between the GaN layer 11 and the substrate 31. FIG. Separate with. Then, as shown in FIG. 15 (7), the transfer is performed such that the p-electrode portion is pierced into the adhesive layer 39 on the opposite side. The light emitting element 32 in the region not irradiated with the laser light 36 is a region 39 s where the corresponding adhesive layer 39 is cured, and is not irradiated with the laser light, so that it is transferred to the temporary holding member 33 side. There is nothing. In the figure, only one light emitting element 32 is selectively irradiated with laser, but it is also assumed that the light emitting element 32 is similarly irradiated with laser in a region separated by n pitches. By such selective transfer, the light emitting elements 32 are arranged on the temporary holding member 33 at a distance from that when the light emitting elements 32 are arranged on the substrate 31.
[0025]
Next, as shown in FIG. 15 (8), the light emitting element 32 is held by the adhesive layer 39 of the temporary holding member 33, and the back surface of the light emitting element 32 is on the n electrode side (cathode electrode side). Thus, the electrode pad 19d electrically connected to the back surface of the light emitting element 32 is formed here.
[0026]
In the above, when the GaN-based light emitting device 32 is peeled from the sapphire substrate 31 by the laser light 36, Ga is bent on the peeled surface, and therefore it is necessary to etch the Ga to extract emitted light. This can be done with aqueous NaOH or nitric acid. As the electrode pad 19d, a transparent electrode material (such as ITO or ZnO) or a material such as Ti / Al / Pt / Au can be used. In the case of a transparent electrode material, even if the back surface of the light emitting element is largely covered, light emission is not blocked, so that the patterning accuracy may be rough, and a large electrode can be formed, thereby facilitating the patterning process.
[0027]
After the electrode pad 19d is formed, as shown in FIG. 16 (9), another support 37 with a release layer 38 is attached to the adhesive layer 39 in FIG. 15 (8) as a second temporary holding member. And then peeled from the first temporary holding member 33 together with the adhesive layer 39.
[0028]
Next, as shown in FIG. 16 (10), after the via hole 41 on the anode electrode (p electrode) side is formed, the anode side electrode pad 18d is formed, and the adhesive layer 39 made of resin is further diced to obtain a light emitting element. The adhesive layer 39 is divided by the element separation groove 42 every 32, and the resin chip 40 in which each light emitting element 32 is embedded is obtained. This dicing is performed by dicing using mechanical means such as a dicing blade, or laser dicing using a laser beam such as an excimer laser, a harmonic YAG laser, or a carbon dioxide gas laser.
[0029]
Next, as shown in FIG. 16 (11), the light emitting element 32 is peeled off from the second temporary holding member 37 using mechanical means. At this time, a release layer 38 such as a fluorine coat, a silicone resin, a water-soluble adhesive (for example, PVA), polyimide, or the like is formed on the second temporary holding member 37. For example, when polyimide is formed as the release layer 38 by irradiating the back surface with, for example, a YAG third harmonic laser, polyimide ablation occurs at the interface between the polyimide 38 and the quartz substrate 37, and each light emitting element 32 has a second The temporary holding member 37 can be easily peeled off by mechanical means.
[0030]
As such mechanical means, an adsorption device 53 that picks up the light emitting elements 32 arranged on the second temporary holding member 37 can be used. The suction holes 45 of the suction device are opened in a matrix, for example, corresponding to the pixel pitch of the image display device, so that a large number of light emitting elements 32 can be sucked together. An adsorption chamber 44 is formed in the back of the adsorption hole 45, and the light emitting element 32 can be adsorbed by controlling the adsorption chamber 44 to a negative pressure. Since the light emitting element 32 is covered with the resin 39 and the upper surface thereof is substantially flattened, selective adsorption by the adsorption device 53 can be easily performed.
[0031]
Next, as shown in FIG. 17 (12), the light emitting element 32 picked up by the suction device 53 is transferred to the printed circuit board 50. An adhesive layer 46 such as a UV curable adhesive, a thermosetting adhesive, or a thermoplastic adhesive is applied to the substrate 50 in advance, and the adhesive layer 46 in a region where the light emitting element 32 is to be fixed is cured. Here, the light emitting elements 32 can be fixedly arranged. At this time, the pressure in the adsorption chamber 44 of the adsorption device 53 is increased, and the coupled state by adsorption with the light emitting element 32 is released. Further, the energy for curing the resin of the adhesive layer 46 is supplied from the back surface of the substrate 50 by light irradiation 63. In the case of a UV curable adhesive, a UV irradiation device, and in the case of a thermosetting adhesive, the same laser irradiation is performed. Is performed by melting the adhesive.
[0032]
An electrode layer 47 that also functions as a shadow mask is provided on the substrate 50, and a black chrome layer 48 is formed on the surface of the electrode layer 47 on the screen side (that is, the surface on the display device viewing side). In this way, the contrast of the image can be improved, and the energy absorption rate in the chrome layer 48 can be increased, and the curing of the adhesive layer 46 by the selectively irradiated beam 63 can be promoted. it can.
[0033]
Thus, after fixing the resin chip 40 in which the light emitting element 32 is embedded on the electrode layer 47 provided on the upper surface of the substrate 50 with the transparent adhesive 46, as shown in FIG. An epoxy resin solution is applied, dried and heat-cured to form a second insulating layer 49 made of an epoxy resin.
[0034]
In this state, as shown in FIG. 17 (14), the lead electrodes 18 d and 19 d of the internal semiconductor light emitting element 32 are connected to the conductive layer through the connection holes 55, 56, 57 formed in the second insulating layer 49. The electrodes 54 and 58 are connected to the electrode layer 47 on the substrate 50 and further to a drive control circuit (not shown). In this case, the connection holes 55, 56, and 57 are formed by general-purpose photolithography, and then aluminum is vapor-deposited or sputtered on the entire surface and patterned by general-purpose photolithography. The p-electrode 15 of the light emitting element 32 is a conductive layer. The n-pole side of the light emitting element 32 is led to the upper surface of the second insulating layer 49 through the conductive layer 58 and further connected to the drive control circuit.
[0035]
In this manner, with the semiconductor light emitting element 32 embedded in the first insulating layer 39, the semiconductor light emitting element 32 is arranged and fixed on the surface of the substrate 50 serving as the panel surface at a predetermined interval, and these are fixed by the second insulating layer 49. An image display device having a structure in which the electrodes 18d and 19d are drawn out so as to be covered can be manufactured.
[0036]
[Problems to be solved by the invention]
As described above, the invention of the prior application has excellent features, but it has been found that there are still problems to be improved.
[0037]
That is, in the peeling process of the light emitting element 32 shown in FIG. 15 (6), after the separation groove 32g is inserted by RIE, as shown in enlarged views in FIGS. 18 (1) and (2), laser ablation is used. Since the light emitting element 32 selectively irradiated with the laser beam 36 is separated at the interface between the GaN layer 11 and the substrate 31, the separated light emitting element 32 is integrated with the GaN layer 11 as a base layer. Since the area of the underlayer is large, the element size is increased, and the resistance is increased by the underlayer 11.
[0038]
Further, in addition to the necessity of cutting by RIE to obtain the light emitting element 32, Ga due to decomposition of GaN is deposited on the peeled surface of the GaN-based light emitting element 32 peeled from the sapphire substrate 31. It is also necessary to etch Ga.
[0039]
Accordingly, an object of the present invention is to provide a method capable of easily manufacturing a light-emitting element having a small area and a low resistance and a light-emitting device incorporating the same by a method different from the above-mentioned invention of the prior application, with fewer man-hours. There is.
[0040]
[Means for Solving the Problems]
  That is, the present invention relates to a step of forming a mask layer having an opening on a crystalline substrate, a step of subjecting the opening to an element peeling promotion treatment, and a light emitting element configuration comprising a gallium compound semiconductor on the processing region. A method for manufacturing a light-emitting element, comprising: a step of crystal-growing a material; and a step of peeling a crystal layer obtained thereby on the processing regionBecause
    On the crystalline substrate, a gallium compound semiconductor that serves as a seed for crystal growth of the crystal layer  Forming an underlayer consisting of the body,
    After forming the mask layer on the underlayer, the mask layer is heated by heat treatment.  Generate voids in the surface area of the underlying layer exposed in the opening,
    Thereafter, the light-emitting element constituent material is crystal-grown on the void generation region of the underlayer.  Forming the crystal layer,
    After that, the void generation area is irradiated with laser light, and the shock wave of this laser light  The crystal layer is peeled from the base layer and the mask layer at the interface between the crystal layer and the base layer.  Separate
A method for manufacturing a light emitting deviceIt is related to.
  The present invention also includes a step of forming a mask layer having an opening on a crystalline substrate, a step of subjecting the opening to an element peeling promotion treatment, and a light emitting element constituent material comprising a gallium compound semiconductor on the processing region. A method for producing a light-emitting element, comprising: a step of growing a crystal; and a step of peeling a crystal layer obtained thereby on the treatment region,
    On the crystalline substrate, a gallium compound semiconductor that serves as a seed for crystal growth of the crystal layer  Forming an underlayer consisting of the body,
    After forming the mask layer on the underlayer, the mask layer is exposed in the opening.  Further, the light emitting element constituent material is crystal-grown to a thin thickness on the surface of the underlayer,
    By raising the temperature when the thin crystal growth layer reaches a predetermined thickness,  Generate voids in the surface area of the crystal growth layer,
    Subsequently, the light emitting element constituent material is further crystallized on the void generation region of the crystal growth layer.  Growing to form the crystalline layer;
    After that, the void generation area is irradiated with laser light, and the shock wave of this laser light  The crystal layer is separated from the crystal growth layer at the interface between the crystal layer and the crystal growth layer.
The present invention relates to a method for manufacturing a light-emitting element.
[0041]
  The present invention also includes a step of forming a mask layer having an opening on a crystalline substrate, a step of subjecting the opening to an element peeling promotion treatment, and a light emitting element constituent material comprising a gallium compound semiconductor on the processing region. A crystal growth step, a step of peeling the crystal layer obtained thereby on the treatment region, a step of embedding a light emitting element obtained by the peeling in an insulating layer, and the light emitting element in the insulating layer A method of manufacturing a light emitting device, comprising: a step of forming an electrode terminal connected to the substrate; a step of manufacturing a light emitting element unit including the electrode terminal; and a step of connecting and fixing the light emitting element unit to a drive circuit board.Because
    On the crystalline substrate, a gallium compound semiconductor that serves as a seed for crystal growth of the crystal layer  Forming an underlayer consisting of the body,
    After forming the mask layer on the underlayer, the mask layer is heated by heat treatment.  Generate voids in the surface area of the underlying layer exposed in the opening,
    Thereafter, the light-emitting element constituent material is crystal-grown on the void generation region of the underlayer.  Forming the crystal layer,
    After that, the void generation area is irradiated with laser light, and the shock wave of this laser light  The crystal layer is peeled from the base layer and the mask layer at the interface between the crystal layer and the base layer.  Separate
A method of manufacturing a light emitting deviceIt is to provide.
  Furthermore, the present invention relates to a step of forming a mask layer having an opening on a crystalline substrate, a step of subjecting the opening to an element peeling promotion treatment, and a light emitting element constituent material comprising a gallium compound semiconductor on the processing region A crystal growth step, a step of peeling the crystal layer obtained thereby on the treatment region, a step of embedding a light emitting element obtained by the peeling in an insulating layer, and the light emitting element in the insulating layer A method of manufacturing a light-emitting device, comprising: a step of forming an electrode terminal connected to the substrate; a step of manufacturing a light-emitting element unit including the electrode terminal; and a step of connecting and fixing the light-emitting element unit to a drive circuit board. And
    On the crystalline substrate, a gallium compound semiconductor that serves as a seed for crystal growth of the crystal layer  Forming an underlayer consisting of the body,
    After forming the mask layer on the underlayer, the mask layer is exposed in the opening.  Further, the light emitting element constituent material is crystal-grown to a thin thickness on the surface of the underlayer,
    By raising the temperature when the thin crystal growth layer reaches a predetermined thickness,  Generate voids in the surface area of the crystal growth layer,
    Subsequently, the light emitting element constituent material is further crystallized on the void generation region of the crystal growth layer.  Growing to form the crystalline layer;
    After that, the void generation area is irradiated with laser light, and the shock wave of this laser light  The crystal layer is separated from the crystal growth layer at the interface between the crystal layer and the crystal growth layer.
The present invention also provides a method for manufacturing a light emitting device.
[0042]
  According to the present invention, the opening of the mask layer formed on the substrate is formed in the opening.Void generation area (Device peeling acceleration treatmentregion)TheFormationSince the crystal layer grown on the processing region is peeled off on the processing region, the peeled element has a large area size like the base layer in the prior invention described above. Since the resistance layer does not exist, a light-emitting element with a small element size and low resistance can be obtained.
[0043]
  Also,Since it is peeled off by the shock wave of the laser beam,Unlike the above-described peeling by laser ablation, there is no precipitation of Ga or the like at the element-substrate interface, so that the precipitate is removed for extraction of emitted light. Etching and removal are also unnecessary, and it can be easily manufactured with fewer steps.
[0044]
In addition, since the mask layer has an action of hindering crystal growth from the base, it is possible to prevent propagation of threading dislocations from the base side, and to perform desired crystal growth only from the opening. The presence of the treatment region prevents propagation of threading dislocations from the underlayer, and makes it possible to perform crystal growth satisfactorily. Further, the crystal growth is extended from the treatment region to the region including the mask layer, and the lateral direction. If crystal growth occurs, threading dislocations can be more reliably prevented from propagating.
[0045]
In addition, since the light emitting element is embedded in an insulating layer to form a unit (chip) and connected to electrode terminals provided in the unit, and these terminals are connected to the drive circuit board, the unit area of the light emitting device The area occupied by the light emitting element per unit area can be reduced, the wiring can be simplified, and the cost can be significantly reduced. Then, handling can be facilitated by embedding a light-emitting element having a minute size and shape into a chip having a large apparent size.
[0046]
DETAILED DESCRIPTION OF THE INVENTION
In the present invention, the crystal layer is peeled on the processing region, but actually, the crystal layer is peeled off from the processing region and the mask layer without accompanying the base layer as described above. .
[0047]
  Also, the aboveWhen growing crystals on the underlayer, on a crystalline substrate such as sapphireAboveAn underlying layer is formed, the mask layer is formed on the underlying layer, and the element peeling promotion treatment is performed on the opening or on the underlying layer in the opening on the underlying layer.
[0048]
  For example,The element peeling promotion treatment is performed on the base layer in the opening.NoThe base layer is heat-treated to form voids for promoting element peeling. Since such voids are likely to remain on the peeling surface after the element is peeled off, the presence of the voids causes a scattering effect of the emitted light, which may increase the pixels and improve the image quality.
[0049]
  Alternatively, the element peeling promotion treatment is performed on the base layer in the opening.AboveRow against crystal growth layerNoWhen the crystal growth is performed on the underlayer by a predetermined thickness, the temperature is raised to form a void for promoting element peeling in the crystal growth layer, and then the crystal growth is performed.
[0052]
In addition, a light emitting element can be configured by forming a crystalline layer by sequentially growing a first conductive type layer, an active layer, and a second conductive type layer on the processing region.
[0053]
  The crystal layer is made of GaN or the like.Gallium-basedAlthough it may be formed on a substrate such as sapphire by epitaxial growth of a nitride semiconductor, the underlayer as a seed of the crystal layer is formed on a crystalline substrate such as sapphire by epitaxial growth of a nitride semiconductor such as GaN. Good.
[0054]
  Gallium-basedNitrideAfter embedding a semiconductor light-emitting element made of a semiconductor in the resin as the insulating layer, an electrode pad as the electrode terminal is formed on the resin, and further scribing to produce the light-emitting element unit. Since the chip can be embedded in the resin, the area occupied by the light emitting element per unit area of the light emitting device can be reduced, the wiring can be simplified, and the cost can be significantly reduced. Then, handling can be facilitated by embedding the light emitting element having a minute size and forming a chip having a large apparent size.
[0055]
In addition, this invention is suitable for manufacturing the light emitting element or light-emitting device as an image display apparatus or a light source device.
[0056]
Next, a preferred embodiment of the present invention will be specifically described with reference to the drawings.
[0057]
First embodiment
1 to 4 show a method for manufacturing a light emitting element (and a display device) according to the first embodiment of the present invention.
[0058]
First, as shown in FIG. 1A, as shown in FIGS. 14A and 14B, a buffer layer (not shown) such as A1 or GaN is formed on the (0001) surface of the sapphire substrate 31 at a temperature of 500 ° C. Subsequently, after epitaxially growing an n-type gallium nitride (GaN: Si) layer 11 doped with silicon at 1000 ° C., SiO 2 is formed on the gallium nitride layer 11.₂Alternatively, the SiN mask 43 is formed, and the opening 43a is formed by photoetching.
[0059]
Next, as shown in FIG. 1B, before crystal growth of n-type gallium nitride on the opening 43a, the substrate is heated at 1020 ° C. for 5 minutes to form the underlying gallium nitride layer 11 in the opening 43a. A void 60 is generated in the surface area.
[0060]
Next, as shown in FIG. 1 (3), crystal growth (epitaxial growth) of n-type gallium nitride doped with silicon at 1000 ° C. using the gallium nitride layer 11 as a seed results in a hexagonal pyramid-shaped n-type semiconductor ( A GaN: Si) layer 12 is formed.
[0061]
Next, as shown in FIG. 2 (4), an active layer 13 made of InGaN is formed on the hexagonal pyramid (1-101) plane and the inclined surface equivalent thereto by lowering the growth temperature. After a p-type gallium nitride (GaN: Mg) layer 14 doped with magnesium is grown, Ni / Au is vapor-deposited on the p-type (GaN: Mg) layer 14 of the surface layer portion so that the reflection surface of the light emission A p-electrode 15 is formed.
[0062]
Next, in the state of FIG. 2 (4), laser light (excimer, harmonic YAG) 66 is irradiated from the substrate 31 side. As a result, as shown in FIG. 2 (5), the gallium nitride layer 12 is separated at the interface between the gallium nitride layers 11-12 by the shock wave of the laser beam 66. This separation occurs because the void 60 is weak in strength and easily broken by the impact force of the laser light 66.
[0063]
In this way, the light emitting element 62 is peeled off from the base layer 11 and the mask layer 43, and as shown in FIG. 3 (6) (however, the light emitting element 62 is simplified in the subsequent drawings). In the same manner as shown in FIG. 15 (7), it is embedded in the first insulating layer 39 with the release layer 34 provided on the support 33 and peeled and transferred onto the support 33. In this case, the selective formation of the uncured region of the first insulating layer 39 and the transfer of the light emitting element 62 to this region can be performed in the same manner as described above, and thus the description thereof is omitted here.
[0064]
Next, as shown in FIG. 3 (7), the light emitting element 62 is held by the insulating layer (adhesive layer) 39 of the temporary holding member 33, and the back surface of the light emitting element 62 is on the n electrode side (cathode electrode side). The entire surface is SiO₂An insulating layer 61 such as is formed.
[0065]
Next, as shown in FIG. 3 (8), an opening is formed in the insulating layer 61 by photoetching to expose the gallium nitride layer 12 of the light emitting element 62, and then aluminum or the like is deposited on the entire surface by vapor deposition or the like. The electrode pad 69d is formed by patterning by lithography.
[0066]
After forming this electrode pad 69d, as shown in FIG. 4 (9), another support 37 with a release layer 38 is attached to the adhesive layer 39 of FIG. 3 (8) as a second temporary holding member. And then peeled from the first temporary holding member 33 together with the light emitting element 62.
[0067]
Next, as shown in FIG. 4 (10), the adhesive layer 39 is slightly removed in the thickness direction as necessary, and then the electrode pad 68d on the anode electrode (p electrode) side is formed into a predetermined pattern by vapor deposition or the like and photolithography. Form.
[0068]
Next, as shown in FIG. 4 (11), the resin layer is scribed (diced) from the adhesive layer 39 to the support 37, divided for each light emitting element 62 by an element separation groove 72, and a resin in which each light emitting element 62 is embedded. A chip 70 is assumed. This dicing is performed by dicing using mechanical means such as a dicing blade, or laser dicing using a laser beam such as an excimer laser, a harmonic YAG laser, or a carbon dioxide gas laser.
[0069]
Next, in the same manner as shown in FIGS. 16 (11) to 17 (12), the light emitting element 62 is peeled off from the second temporary holding member 37, and the light emitting element 62 picked up by the suction device is further attached to the printed circuit board. Transcript.
[0070]
Next, in the same manner as shown in FIGS. 17 (13) and (14), the light emitting element 62 is embedded in the first insulating layer 39 and fixed on the surface of the substrate serving as the panel surface at a predetermined interval. Then, an image display device having a structure in which these are covered with the second insulating layer 49 and the electrodes 68d and 69d are drawn out can be manufactured.
[0071]
As described above, according to the present embodiment, the void 60 is generated in the base layer 11 exposed in the opening 43a of the mask layer 43 in the element peeling process of FIGS. Since the gallium nitride layer 12 is peeled from the void 60 portion by the impact force 66, the peeled light emitting element 62 does not have the high resistance underlayer 11 having a large area size, and the element size is reduced. A light-emitting element 62 having a small and low resistance can be obtained.
[0072]
The voids 60 that are indispensable for the peeling of the light emitting element 62 are generated by subjecting the underlayer 12 to the heat treatment described above. In the invention of the prior application, such voids are few. That is, in the prior invention, the gallium nitride layer 12 is formed by starting growth at, for example, 850 ° C. and growing at 1000 ° C. after the formation of the base layer 11 in the step of FIG. Voids are not generated or only a small amount is generated at the interface between the gallium layers 12-11, and even when laser light is irradiated as in this embodiment, peeling does not occur at the interface.
[0073]
Due to the void 60 as described above, the peeled surface is likely to be roughened after the element is peeled off. However, the presence of this roughened surface causes a scattering effect of emitted light, so that the pixels can be enlarged and the image quality can be improved.
[0074]
Further, since the light emitting elements 62 can be obtained individually by peeling, the above-described cutting by RIE is not necessary, and in addition to the above-described peeling by laser ablation, precipitation of Ga or the like at the element-substrate interface. Therefore, it is not necessary to etch and remove the deposit for taking out the emitted light, and it can be easily manufactured with reduced man-hours.
[0075]
Further, since the mask layer 43 has an action of hindering crystal growth from the base, it is possible to prevent propagation of threading dislocations from the base side, and to allow desired crystal growth from only the opening 43a. The presence of the void 60 prevents the propagation of threading dislocations from the underlayer and allows the crystal growth to be performed satisfactorily. Further, the crystal growth is extended from the void 60 to a region including the mask layer 43, and the lateral growth is performed. Since crystal growth occurs, the propagation of threading dislocations can be more reliably prevented.
[0076]
In addition, since the semiconductor light emitting element 62 is embedded into a chip and connected to external terminals 68d and 69d provided on the chip 70, and these external terminals are connected to a drive control circuit such as a drive transistor, a display device is provided. The area occupied by the light emitting element 62 per unit area can be reduced, the wiring can be simplified, and the cost can be drastically reduced. Then, by embedding the light emitting element 62 having a minute dimension and forming the chip 70 having a large apparent size, handling can be facilitated.
[0077]
Second embodiment
5 and 6 show a method for manufacturing a light emitting element (and a display device) according to the second embodiment of the present invention.
[0078]
First, as shown in FIG. 5A, the n-type gallium nitride layer 11 and the mask layer 43 are formed on the sapphire substrate 31 in the same manner as shown in FIG.
[0079]
Next, as shown in FIG. 5 (2), when the silicon-doped second gallium nitride layer is epitaxially grown on the gallium nitride layer 11 in the mask opening 43a, the gallium nitride layer 12a has a thickness of 100 nm (planar) at 850 ° C. The temperature is raised to 1020 ° C. when the thickness is reached while growing thinly. As a result, a void 60 is generated in the thin gallium nitride layer 12a.
[0080]
Then, the silicon-doped gallium nitride layer 12 is continuously epitaxially grown as it is to form the hexagonal pyramid-shaped n-type semiconductor (GaN: Si) layer 12.
[0081]
Next, as shown in FIG. 6 (4), an active layer 13 made of InGaN is formed on the (1-101) plane of this hexagonal pyramid and an inclined plane equivalent thereto by lowering the growth temperature. After a p-type gallium nitride (GaN: Mg) layer 14 doped with magnesium is grown, Ni / Au is vapor-deposited on the p-type (GaN: Mg) layer 14 of the surface layer portion to form a p-type reflection surface. The electrode 15 is formed.
[0082]
Next, in the state of FIG. 6 (4), laser light (excimer, harmonic YAG) 66 is irradiated from the substrate 31 side. As a result, as shown in FIG. 6 (5), the gallium nitride layer 12 is separated at the interface between the gallium nitride layers 12-12 a by the shock wave of the laser light 66. This separation occurs because the void 60 is weak in strength and easily broken by the impact force of the laser light 66.
[0083]
In this manner, after the light emitting element 72 is peeled off from the gallium nitride layer 12a and the mask layer 43, the light emitting element 72 is embedded in the first insulating layer 39 as shown in FIGS. An image display device having a structure in which the electrodes 68d and 69d are drawn out by covering and fixing them with the second insulating layer 49 can be manufactured on the surface of the substrate serving as the panel surface with an interval.
[0084]
As described above, according to the present embodiment, the void 60 is generated in the thin gallium nitride layer 12a formed in the opening 43a of the mask layer 43 in the element peeling process of FIGS. 6 (4) and 6 (5). Since the gallium nitride layer 12 is peeled off from the void 60 by the impact force of the laser light 66, the peeled light emitting element 72 does not of course have the high resistance underlayer 11 having a large area size. A light-emitting element 72 having a small element size and low resistance can be obtained.
[0085]
Due to the void 60 as described above, the peeled surface is likely to be roughened after the element is peeled off. However, the presence of this roughened surface causes a scattering effect of emitted light, so that the pixels can be enlarged and the image quality can be improved.
[0086]
In addition, as in the first embodiment described above, since the light emitting elements 72 can be peeled and obtained individually, the above-described cutting by RIE is not required, and the Ga precipitate is removed by etching. It becomes unnecessary and can be manufactured easily with reduced man-hours. Further, the crystal growth can be satisfactorily performed by the propagation preventing action of threading dislocations by the mask layer 43, and light emission is achieved by connecting and fixing the chip in which the semiconductor light emitting element 72 is embedded. It is possible to reduce the area of the element, simplify the wiring, reduce the cost, and facilitate the handling.
[0087]
<Reference example>
  7 and 8 show the present invention.Reference exampleThe manufacturing method of the light emitting element (and display apparatus) by this is shown.
[0088]
First, as shown in FIG. 7A, the n-type gallium nitride layer 11 and the mask layer 43 are formed on the sapphire substrate 31 in the same manner as shown in FIG.
[0089]
Next, as shown in FIG. 7B, an indium gallium nitride (InGaN) layer 16 is formed at 850 ° C. before epitaxially growing the second silicon-doped gallium nitride layer on the gallium nitride layer 11 in the mask opening 43a. Grow thinly to 100 nm thickness (planar conversion).
[0090]
Next, as shown in FIG. 7 (3), an n-type gallium nitride layer 12 doped with silicon at 1000 ° C. is epitaxially grown to form a hexagonal pyramid-shaped n-type semiconductor (GaN: Si) layer 12.
[0091]
Next, as shown in FIG. 8 (4), an active layer 13 made of InGaN is formed on the (1-101) plane of this hexagonal pyramid and an inclined plane equivalent thereto by lowering the growth temperature. After a p-type gallium nitride (GaN: Mg) layer 14 doped with magnesium is grown, Ni / Au is vapor-deposited on the p-type (GaN: Mg) layer 14 of the surface layer portion to form a p-type reflection surface. The electrode 15 is formed.
[0092]
Next, in the state of FIG. 8 (4), laser light (excimer, harmonic YAG) 86 having a wavelength of 400 nm is irradiated from the substrate 31 side. As a result, as shown in FIG. 8 (5), the indium gallium nitride layer 16 that absorbs at the wavelength (400 nm) of the laser beam 86 selectively generates heat due to the absorption of the laser beam 86, so The gallium nitride layer 12 is separated at the interface. This separation occurs because the indium gallium nitride layer 16 is melted by absorption of the laser beam 86.
[0093]
After the light emitting element 82 is peeled from the indium gallium nitride layer 16 and the mask layer 43 in this way, the light emitting element 82 is embedded in the first insulating layer 39 as shown in FIGS. An image display device having a structure in which the electrodes 68d and 69d are drawn out by covering and fixing them with the second insulating layer 49 can be manufactured on the surface of the substrate serving as the panel surface with an interval.
[0094]
  As mentioned above,ThisofReference example8 (4) and 8 (5), the thin indium gallium nitride layer 16 formed in the opening 43a of the mask 43 is melted with laser light and the gallium nitride layer 12 is peeled from this portion. Therefore, the peeled light emitting element 82 does not necessarily have the high resistance underlayer 11 having a large area size, and the light emitting element 82 having a small element size and a low resistance can be obtained. .
[0095]
In addition, as in the first embodiment described above, since the light emitting elements 82 can be peeled and obtained individually, the above-described cutting by RIE is not required, and the Ga precipitate is removed by etching. It becomes unnecessary and can be manufactured easily with reduced man-hours. Further, the mask layer 43 can prevent the propagation of threading dislocations, so that crystal growth can be favorably performed, and light emission is achieved by connecting and fixing a chip in which the semiconductor light emitting element 82 is embedded. It is possible to reduce the area of the element, simplify the wiring, reduce the cost, and facilitate the handling.
[0096]
Third embodiment
  9 and 10 show the first of the present invention.3The manufacturing method of the light emitting element (and display apparatus) by embodiment of this is shown.
[0097]
First, as shown in FIGS. 9A and 9B, the n-type gallium nitride layer 11 and the mask layer 43 are formed on the sapphire substrate 31 in the same manner as shown in FIG. In the gallium nitride layer 11, due to lattice mismatch with the sapphire substrate 31, thermal expansion coefficient difference, etc., about 3 × 10 × 10.⁹cm^-2There are threading dislocations 90 at a density of
[0098]
Next, as shown in FIG. 9 (3), before the silicon-doped second gallium nitride layer is epitaxially grown on the gallium nitride layer (underlayer) 11 in the mask opening 43a, the first embodiment described above is applied. Similarly to the above, the base layer 11 is heat-treated at 1020 ° C. for 5 minutes. As a result, a void 60 is generated in the gallium nitride layer 11.
[0099]
Next, silicon-doped gallium nitride is epitaxially grown on the underlayer 11, but before this growth, the temperature is raised while flowing a nitrogen source (ammonia) and a carrier gas (hydrogen and nitrogen) to share the silane gas that is the silicon source. Five minutes after the supply, supply of trimethylgallium as a gallium raw material is started at 1020 ° C. to grow gallium nitride.
[0100]
Generally, silicon is known as an anti-surfactant that inhibits growth in crystal growth of a gallium nitride-based compound semiconductor, and after supplying silane gas, the surface of the gallium nitride layer 11 in the opening 43a of the mask layer 43 becomes SiN._xAs shown in FIG. 9 (3), the surface of the gallium nitride layer 11 becomes a growth inhibition surface 91 made mainly of silicon nitride. Although gallium nitride hardly grows on the growth inhibition surface 91, the growth inhibition surface 91 has micropores (pinholes) together with the void 60 described above.
[0101]
Next, as shown in FIG. 10 (4), when gallium nitride is epitaxially grown, the growth starts in an island shape from the portion where the voids 60 and micropores of the growth inhibition surface 91 are present, and grows as a gallium nitride layer 12b having irregularities. To do. However, since such island-shaped growth is caused by the void 60, it is sufficient that at least the void 60 exists in the opening 43a.
[0102]
Further, as the growth proceeds further, as shown in FIG. 10 (5), the slope 92 portion of the gallium nitride layer 12c extends so as to extend up to the mask layer 43, and the mask layer 43 is not formed. Despite growing from the portion 43a, a crystal having a low threading dislocation density can be obtained.
[0103]
As shown in FIG. 10 (6), if the growth is further continued, the lateral growth is sufficiently performed on the mask layer 43. Therefore, in these regions, the threading dislocation 90 extending vertically from the sapphire substrate 31 side is surely formed by the mask layer 43. Therefore, almost no dislocation occurs.
[0104]
Thus, the gallium nitride layer 12 having a very low dislocation density can be formed on the mask layer 43 in a planar type.
[0105]
Next, as shown in FIG. 2 (4), an active layer made of InGaN is formed on the surface of the gallium nitride layer 12 by lowering the growth temperature, and p-type gallium nitride (GaN: Mg) doped with magnesium is further formed thereon. After the layer is grown, Ni / Au is vapor-deposited on the p-type (GaN: Mg) layer of the surface layer portion to form a p-electrode that also serves as a reflection surface for light emission.
[0106]
Next, as shown in FIGS. 2 (4) and 2 (5), by irradiating laser light (excimer, harmonic YAG) from the substrate 31 side, the gallium nitride layers 11-12 are affected by the shock wave of the laser light. The gallium nitride layer 12 is separated at the interface. This separation occurs because the void 60 is weak in strength and easily broken by the impact force of the laser beam.
[0107]
In this way, after the planar light emitting device is peeled from the gallium nitride layer 11 and the mask layer 43, the light emitting device is embedded in the first insulating layer 39 as shown in FIGS. It is possible to manufacture an image display device having a structure in which electrodes 68d and 69d are drawn out by covering them with a second insulating layer 49 and fixing them on the surface of the substrate serving as a panel surface at a predetermined interval.
[0108]
As described above, according to the present embodiment, the planar light-emitting element with a small element size and low resistance, and a thin type, are obtained by the same process as the element peeling in FIGS. 2 (4) and 2 (5). A light emitting device can be obtained.
[0109]
Due to the void 60 as described above, the peeled surface is likely to be roughened after the element is peeled off. However, the presence of this roughened surface causes a scattering effect of emitted light, so that the pixels can be enlarged and the image quality can be improved.
[0110]
In addition, as in the first embodiment described above, since the light emitting elements can be peeled and obtained individually, the above-described cutting by RIE is not required, and the Ga deposit is not etched away. Therefore, the mask layer 43 can be easily manufactured with reduced man-hours, and the crystal growth can be satisfactorily performed by the propagation preventing action of threading dislocations by the mask layer 43. Also, the light emitting element can be obtained by connecting and fixing the chip in which the semiconductor light emitting element is embedded. The area can be reduced, the wiring can be simplified, the cost can be reduced, and the handling can be facilitated.
[0111]
The embodiment described above can be further modified based on the technical idea of the present invention.
[0112]
  For example, the element peeling acceleration processing according to the above-described embodiments can be applied in combination.
[0113]
Further, the structure (for example, electrode extraction structure), material, and the like of each part of the above-described light emitting element, LIP, and display device incorporating these may be variously changed.
[0114]
Moreover, although the light emitting element mentioned above is related with an image display apparatus, it can be applied also as a light source device besides this.
[0115]
[Effects of the invention]
  As described above, according to the present invention, in the opening of the mask layer formed on the crystalline substrate,Void generation area (Device peeling acceleration treatmentregion)TheFormationSince the gallium compound semiconductor crystal layer crystal-grown on the processing region is peeled off on the processing region, the peeled element has an area size like that of the base layer in the prior invention described above. Therefore, there is no high resistance layer, and a light emitting element with a small element size and low resistance can be obtained.
[0116]
  Also,Since it is peeled off by the shock wave of the laser beam,Cutting by RIE or the like is unnecessary, and unlike the separation by laser ablation, there is no precipitation of Ga or the like at the element-substrate interface, so that the precipitate is removed by etching for extraction of emitted light. Is also unnecessary, and can be manufactured easily with reduced man-hours.
[0117]
In addition, since the mask layer has an action of hindering crystal growth from the base, it is possible to prevent propagation of threading dislocations from the base side, and to perform desired crystal growth only from the opening. The presence of the treatment region prevents propagation of threading dislocations from the underlayer, and makes it possible to perform crystal growth satisfactorily. Further, the crystal growth is extended from the treatment region to the region including the mask layer, and the lateral direction. If crystal growth occurs, threading dislocations can be more reliably prevented from propagating.
[0118]
In addition, since the light emitting element is embedded in an insulating layer to form a unit (chip) and connected to electrode terminals provided in the unit, and these terminals are connected to the drive circuit board, the unit area of the light emitting device The area occupied by the light emitting element per unit area can be reduced, the wiring can be simplified, and the cost can be significantly reduced. Then, handling can be facilitated by embedding a light-emitting element having a minute size and shape into a chip having a large apparent size.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of a main part sequentially illustrating a manufacturing process of a light emitting element and a display device according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of a main part sequentially showing the manufacturing process.
FIG. 3 is a schematic cross-sectional view of a main part sequentially showing the manufacturing process.
FIG. 4 is a schematic cross-sectional view of the relevant part showing the manufacturing process in sequence.
FIG. 5 is a schematic cross-sectional view of a main part sequentially illustrating a manufacturing process of a light emitting element and a display device according to another embodiment of the present invention.
FIG. 6 is a schematic cross-sectional view of the relevant part showing the manufacturing process in sequence.
[Fig. 7] of the present invention.Reference exampleFIG. 4 is a schematic cross-sectional view of a main part sequentially illustrating a manufacturing process of a light emitting element and a display device according to the method.
FIG. 8 is a schematic cross-sectional view of the relevant part showing the manufacturing process in sequence.
FIG. 9 is a schematic cross-sectional view of a main part sequentially illustrating a manufacturing process of a light emitting device and a display device according to still another embodiment of the present invention.
FIG. 10 is a schematic cross-sectional view of the relevant part showing the manufacturing process in sequence.
FIG. 11 is a schematic perspective view of a conventional display device.
FIG. 12 is an enlarged sectional view (a) and a plan view (b) of a light emitting device according to the invention of the prior application.
FIG. 13 is a schematic perspective view (a) and a plan view (b) of a resin chip in which a light emitting element is embedded.
FIG. 14 is a schematic cross-sectional view of the relevant part showing sequentially the manufacturing process of the light emitting element and the display device.
FIG. 15 is a schematic cross-sectional view of the relevant part showing the manufacturing process in sequence.
FIG. 16 is a schematic cross-sectional view of the relevant part showing the manufacturing process in sequence.
FIG. 17 is a schematic cross-sectional view of the relevant part showing the manufacturing process in sequence.
FIG. 18 is a schematic cross-sectional view of the main part for explaining the state of peeling of the light emitting element.
[Explanation of symbols]
11 ... Gallium nitride layer (underlayer), 12 ... n-type gallium nitride layer,
12a ... Gallium nitride layer, 13 ... Active layer, 14 ... P-type gallium nitride layer,
15 ... p electrode, 16 ... indium gallium nitride layer, 30 ... emission light,
31 ... Transparent substrate, 32 ... Light emitting element, 33, 37 ... Support, 34, 38 ... Release layer,
36, 66, 86 ... laser light, 39 ... first insulating layer,
40, 70 ... LED-containing resin chip, 43 ... Mask (layer), 43a ... Opening,
60 ... Void, 61 ... Insulating layer, 62, 72, 82 ... Light emitting element,
68d ... electrode pad (drawer p electrode),
69d ... Electrode pad (lead n electrode), 90 ... Threading dislocation, 91 ... Growth inhibition surface

Claims (9)

A step of forming a mask layer having an opening on a crystalline substrate, a step of subjecting the opening to an element peeling promotion treatment, and a step of crystal-growing a light-emitting element constituent material made of a gallium compound semiconductor on the processing region And a step of peeling the crystal layer obtained thereby on the processing region ,
Wherein the crystalline substrate, forming the base layer of gallium-based compound semiconductors as a seed of crystal growth of the crystalline layer,
After forming the mask layer on the foundation layer , a void is generated in the surface area of the foundation layer exposed in the opening of the mask layer by heat treatment ,
Thereafter, the crystal layer is formed by crystal growth of the light emitting element constituent material on the void generation region of the base layer ,
Thereafter, a laser beam is irradiated to said void generation region, to peel away the crystal layer at the interface between the undercoat layer and the crystal layer from the underlying layer and the mask layer by a shock wave of the laser beam
A method for manufacturing a light-emitting element . A step of forming a mask layer having an opening on a crystalline substrate; a step of subjecting the opening to an element peeling acceleration treatment; And a step of peeling the crystal layer obtained thereby on the processing region,
On the crystalline substrate, a gallium compound semiconductor that serves as a seed for crystal growth of the crystal layer Forming an underlayer consisting of the body,
After forming the mask layer on the underlayer, the mask layer is exposed in the opening. Further, the light emitting element constituent material is crystal-grown to a thin thickness on the surface of the underlayer,
By raising the temperature when the thin crystal growth layer reaches a predetermined thickness, Generate voids in the surface area of the crystal growth layer,
Subsequently, the light emitting element constituent material is further crystallized on the void generation region of the crystal growth layer. Growing to form the crystalline layer;
After that, the void generation area is irradiated with laser light, and the shock wave of this laser light The crystal layer is separated from the crystal growth layer at the interface between the crystal layer and the crystal growth layer.
A method for manufacturing a light-emitting element. A step of forming a mask layer having an opening on a crystalline substrate, a step of subjecting the opening to an element peeling promotion treatment, and a step of crystal-growing a light-emitting element constituent material made of a gallium compound semiconductor on the processing region And a step of peeling the crystal layer obtained thereby on the treatment region, a step of embedding the light emitting element obtained by the peeling in the insulating layer, and an electrode connected to the light emitting element on the insulating layer A method for manufacturing a light emitting device, comprising: a step of forming a terminal; a step of manufacturing a light emitting element unit including the electrode terminal; and a step of connecting and fixing the light emitting element unit to a drive circuit board ,
Wherein the crystalline substrate, forming the base layer of gallium-based compound semiconductors as a seed of crystal growth of the crystalline layer,
After forming the mask layer on the foundation layer , a void is generated in the surface area of the foundation layer exposed in the opening of the mask layer by heat treatment ,
Thereafter, the crystal layer is formed by crystal growth of the light emitting element constituent material on the void generation region of the base layer ,
Thereafter, a laser beam is irradiated to said void generation region, to peel away the crystal layer at the interface between the undercoat layer and the crystal layer from the underlying layer and the mask layer by a shock wave of the laser beam
A method of manufacturing a light-emitting device . A step of forming a mask layer having an opening on a crystalline substrate; a step of subjecting the opening to an element peeling acceleration treatment; And the crystal layer obtained thereby is treated region A step of peeling on, a step of embedding the light-emitting element obtained by the peeling in an insulating layer, a step of forming an electrode terminal connected to the light-emitting element on the insulating layer, and light emission including the electrode terminal A method for manufacturing a light emitting device, comprising: a step of manufacturing an element unit; and a step of connecting and fixing the light emitting element unit to a drive circuit board.
On the crystalline substrate, a gallium compound semiconductor that serves as a seed for crystal growth of the crystal layer Forming an underlayer consisting of the body,
After forming the mask layer on the underlayer, the mask layer is exposed in the opening. Further, the light emitting element constituent material is crystal-grown to a thin thickness on the surface of the underlayer,
By raising the temperature when the thin crystal growth layer reaches a predetermined thickness, Generate voids in the surface area of the crystal growth layer,
Subsequently, the light emitting element constituent material is further crystallized on the void generation region of the crystal growth layer. Growing to form the crystalline layer;
After that, the void generation area is irradiated with laser light, and the shock wave of this laser light The crystal layer is separated from the crystal growth layer at the interface between the crystal layer and the crystal growth layer.
A method of manufacturing a light-emitting device. The manufacturing method according to any one of claims 1 to 4 , wherein a first conductive type layer, an active layer, and a second conductive type layer are sequentially stacked and grown on the void generation region to form the crystal layer. Method. The manufacturing method according to claim 5 , wherein the crystal layer is formed on the crystalline substrate by epitaxial growth of a gallium nitride semiconductor. The underlying layer as a seed of the crystal layer is formed by epitaxial growth of a gallium nitride semiconductor on the crystalline substrate, the manufacturing method described in any one of claims 1-4. A semiconductor light emitting device made of a gallium nitride semiconductor is embedded in a resin as the insulating layer, an electrode pad as the electrode terminal is formed in the resin, and further scribed to produce the light emitting device unit. Item 5. The production method according to Item 3 or 4 . The manufacturing method of any one of Claims 1-4 which manufactures the light emitting element or light emitting device as an image display apparatus or a light source device.

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