CN102593087B - Mixed bonding structure for three-dimension integration and bonding method for mixed bonding structure - Google Patents

Mixed bonding structure for three-dimension integration and bonding method for mixed bonding structure Download PDF

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CN102593087B
CN102593087B CN201210050563.2A CN201210050563A CN102593087B CN 102593087 B CN102593087 B CN 102593087B CN 201210050563 A CN201210050563 A CN 201210050563A CN 102593087 B CN102593087 B CN 102593087B
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bonding
substrate
adhesion layer
dielectric adhesion
interconnect metal
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CN102593087A (en
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于大全
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National Center for Advanced Packaging Co Ltd
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National Center for Advanced Packaging Co Ltd
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Abstract

The invention relates to a mixed bonding structure for three-dimension integration and a bonding method for the mixed bonding structure. The mixed bonding structure for the three-dimension integration comprises a first substrate. The first substrate is provided with bonding interconnection metal electrically connected with the first substrate; the other end part of the bonding interconnection metal, which is correspondingly connected with the first substrate, is sunk to form a cavity; a first dielectric adhesion layer covers at the periphery of the bonding interconnection metal on the first substrate; the bonding interconnection metal is encircled by the first dielectric adhesion layer; and the first dielectric adhesion layer is lower than the edge of the bonding interconnection metal. According to the mixed bonding structure for the three-dimension integration, the first dielectric adhesion layer is lower than the edge of the top part of a salient point, and when bonding is performed under the pressure action, the edge of the top part of the salient point is bonded with a pad of a second substrate, and thereby, the dielectric adhesion layer can be stopped entering the surface of the bonding interconnection metal, which is bonded with the pad, and the open circuit problem and the reliability problem can be avoided. The mixed bonding structure for the three-dimension integration is compact in structure and is convenient in process operation.

Description

A kind of for three-dimensional integrated hybrid bonded structure and bonding method thereof
Technical field
The present invention relates to a kind of hybrid bonded structure and bonding method thereof, especially a kind of for three-dimensional integrated hybrid bonded structure and bonding method thereof, belong to the technical field of integrated circuit.
Background technology
The core technology of three dimensional integrated circuits comprises TSV(silicon through hole) making, wafer attenuate, thin wafer hold and bonding techniques etc.All there is great challenge in these technology.Wherein bonding techniques has comprised three kinds of modes such as chip-chip (chip-to-chip), chip-to-wafer (chip-to-wafer) and wafer-wafer (wafer-to-wafer) bonding.For above-mentioned three kinds of bonding techniques, electric interconnection has bi-material, and the one, metal salient point, as Cu, Au etc.; The 2nd, solder bump interconnection, as Sn, In etc.
It is to obtain very little interconnect pitch that three dimensional integrated circuits uses the benefit of metal salient point interconnection, and Cu-Cu bump bonding can obtain good electrical property and reliability; Its shortcoming is that requirement metal salient point has very high evenness, conventionally needs higher bonding temperature (>300 DEG C), and special surface treatment is to remove the oxide of metal surface.For reducing bonding temperature, researcher has done a lot of effort.Representative research is the surface active bonding techniques (SAB, Surface activated bonding) of Tokyo Univ Japan's exploitation.By CMP(chemico-mechanical polishing) leveling, utilizes dry etching to obtain clean metal surface, and complete bonding process under high vacuum.Although the method realizes the low-temperature bonding of knowing clearly, complex process, productive rate is low, and cost is high, is unsuitable for extensive industry application, document T. Suga specifically sees reference, " Feasibility of surface activated bonding for ultra-fine pitch interconnection ", Proc. 2000 IEEE Electronic Components and Technolgoy Conference (ECTC), 2000, pp.702-705. with T.H. Kim, M.M.R. Howlader, et al., " Room temperature Cu-Cu direct bonding using surface activated bonding method ", J. Vac. Sci. Technol. A, 21 (2), 2003, pp. 449-453.
Compared with metal salient point, Gu the major advantage of solder interconnection is the requirement that solder liquid/reaction can reduce para-linkage interface evenness, document K. Sakuma specifically sees reference, P. S. Andry, C. K. Tsang, S. L. Wright, et al., " 3D Chip-Stacking Technology with Through-Silicon Vias and Low-Volume Lead-free Interconnections ", IBM J. RES. & DEV. 52 (6), 2008, p611-631.Electroplate salient point, particularly copper post solder bump has good electrical property and reliability, and can meet pitch and low cost requirement, thereby is subject to industrial quarters favor.Often need multilayer chiop (wafer) stacking because three-dimensional is integrated, therefore need to ensure the follow-up stacking established interconnection structure that do not affect.Therefore on solder bump bonding basis, the application of Transient liquid phase (TLP, transient liquid phase) bonding comes into one's own.After referring to low melting point solder bonding, so-called Transient liquid phase bonding is transformed into intermetallic compound (IMC) completely, can ensure the stability that multilayer chiop is stacking, document R. Agarwal specifically sees reference, W. Zhang, P. Limaye, R. Labie, B. Dimcic, A. Phommahaxay, and P. Soussan, " Cu/Sn Microbumps for 3D TSV Chip Stacking ", Proc. 2010 IEEE Electronic Components and Technolgoy Conference (ECTC), 2010, pp. 858-863.
For solving a ultra fine pitch bump interconnect underfill process difficult problem, improve the reliability of bump interconnect, hybrid bonded (hybrid bonding) method day by day comes into one's own in 3D IC.Hybrid bonded be to adopt salient point and dielectric adhesion layer to carry out bonding in the substrate upper and lower surface for the treatment of bonding simultaneously, document S. J. Koester specifically sees reference, A. M. Young, R. Yu, S. Purrshothaman, et al., " Wafer-level 3D Integration Technology, " IBM J. RES. & DEV. 52 (6), 2008, p583-597 and C. T. Ko, Z. C. Hsiao, H. C. Fu, K. N. Chen, W. C. Lo, Y. H. Chen, " Wafer-to-wafer Hybrid Bonding Technology for 3D IC ", 3rd Electronic System-Integration Technology Conference (ESTC), 2010, pp.1 – 5.Conventional dielectric adhesion layer is BCB(dry etching type phenyl ring the third butylene), SU-8(near ultraviolet negative photoresist), and PI(polyimides) etc. polymeric material or inorganic matter SiO 2.Bonding adopts thermocompression bonding mode, and metal/solder bump is realized metallurgical interconnection, and the space between chip chamber and salient point is filled by hot-press solidifying by dielectric adhesion layer, thereby improves the adhesion of chip chamber bonding.
Also there are problems in hybrid bonded research, material and technology needs to optimize, and lacks reliability consideration.Dielectric adhesion layer, particularly polymer usually can push and flow to metal bonding interface, cause and open circuit and integrity problem.Need to improve bonding techniques and avoid this problem.Further, due to the increase of interconnection density, the required pressure of bonding is increasing, and this is integrated for three-dimensional, particularly can bring damage with the thin chip of TSV structure.Therefore, need low-pressure bonding method.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of for the integrated hybrid bonded structure of three-dimensional and bonding method thereof, its compact conformation, technological operation is convenient, improves the reliability of bonding.
According to technical scheme provided by the invention, described for the integrated hybrid bonded structure of three-dimensional, comprise the first substrate; Described the first substrate is provided with the Bonding interconnect metal being electrically connected with the first substrate, described Bonding interconnect metal pair should with the other end that the first substrate is connected formation cavity that caves in, the end edge that Bonding interconnect metal pair should arrange cavity forms salient point top; The corresponding Bonding interconnect metallic surface that forms of the first substrate is coated with the first dielectric adhesion layer, and described the first dielectric adhesion layer surrounds the height of Bonding interconnect metal and the first dielectric adhesion layer lower than the height of Bonding interconnect metal.
Described Bonding interconnect metal is high temperature bonding metal.The material of described high temperature bonding metal is one or more in Cu, Ni, Al, Pt, Pd or Au.
Described Bonding interconnect metal comprises high temperature bonding metal and is positioned at the low melting point solder of described high temperature bonding metal one end, be connected corresponding with the first substrate of high temperature bonding metal in Bonding interconnect metal, and the formation cavity that caves in the end of low melting point solder; The height of the first dielectric adhesion layer forms the height of cavity end lower than low melting point solder.
Described low melting point solder is kamash alloy or indium-base alloy.The material of described the first dielectric adhesion layer comprises BCB, SU-8, PI polymer or SiO 2.
Described the first substrate is by Bonding interconnect metal and the second bonding body corresponding matching, the second bonding body comprises the second substrate, the surface of described the second substrate is provided with the pad being electrically connected with the second substrate, corresponding surface coverage the second dielectric adhesion layer that forms pad of the second substrate; Bonding interconnect metal passes through the contact corresponding to pad of salient point top, and combines closely under required temperature and pressure, and the first dielectric adhesion layer is connected with after the second dielectric adhesion layer bonding.
The material of described pad is high-temperature metal or low melting point solder.The material of described the second dielectric adhesion layer comprises BCB, SU-8, PI polymer or SiO 2.
The material of described the second substrate comprises silicon.
For a bonding method for the integrated hybrid bonded structure of three-dimensional, described bonding method comprises the steps:
A, provide first key zoarium, on described first key zoarium, the end of corresponding Bonding interconnect metal forms cavity and salient point top;
B, provide the second bonding body, on described the second bonding body, comprise pad and the second dielectric adhesion layer;
C, Bonding interconnect metal pair should be formed to the end of salient point top and contact with the pad location on the second bonding body;
D, under required bonding temperature and pressure, Bonding interconnect metal pair should form end and the pad close contact of salient point top, the second dielectric adhesion layer on the first dielectric adhesion layer and the second bonding body on first key zoarium is bonded to one.
In described step a, comprise the steps:
A1, provide the first substrate, and make on the surface of described the first substrate the Seed Layer being electrically connected with the first substrate;
A2, at corresponding surface-coated the first photoresist layer that forms Seed Layer of the first substrate, and form required figure after photoetching, development exposure;
A3, on above-mentioned the first substrate, electroplate the convex point material that forms desired height and shape, to form Bonding interconnect metal;
A4, remove above-mentioned the first photoresist layer, and corresponding exposed Seed Layer on etching the first substrate;
A5, on above-mentioned the first substrate, form the first dielectric adhesion layer, described the first dielectric adhesion layer covers the surface of the first substrate and covers the salient point top of Bonding interconnect metal end;
A6, remove the first dielectric adhesion layer being covered in Bonding interconnect metal end salient point top by ion etching, and make the height of the first dielectric adhesion layer lower than the height of salient point top, to form required first key zoarium.
Described the first dielectric adhesion layer covers on the first substrate and Bonding interconnect metal by whirl coating.In described step a3, shape and the convex point material of electroplating formation desired height comprise high-temperature metal or low melting point solder.
Advantage of the present invention: the first substrate is provided with the Bonding interconnect metal being electrically connected with the first substrate, described Bonding interconnect metal pair should with the other end that the first substrate is connected formation cavity that caves in, the end edge that Bonding interconnect metal pair should arrange cavity forms salient point top; The corresponding Bonding interconnect metallic surface that forms of the first substrate is coated with the first dielectric adhesion layer, and described the first dielectric adhesion layer surrounds the height of Bonding interconnect metal and the first dielectric adhesion layer lower than the height of salient point top; When by Bonding interconnect metal and pad bonding, the height of the first dielectric adhesion layer is lower than salient point top, in the time of bonding under pressure, salient point top can stop that with pad contact bonding dielectric adhesion layer enters the surface that bonding interconnecting metal is combined with pad, opens circuit and integrity problem thereby can avoid causing; Compact conformation, technological operation is convenient.
Brief description of the drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the another kind of structural representation of Bonding interconnect metal of the present invention.
Fig. 3 for ~ Fig. 6 be the concrete steps cutaway view that Bonding interconnect metal of the present invention forms, wherein:
Fig. 3 electroplates the cutaway view forming after Bonding interconnect metal.
Fig. 4 is the cutaway view of removing after photoresist layer etching Seed Layer.
Fig. 5 is the cutaway view forming after first medium adhesion layer.
Fig. 6 is the cutaway view forming after first key zoarium.
Fig. 7 ~ Fig. 9 is the concrete steps cutaway view of the present invention and the second bonding body bonding, wherein:
Fig. 7 is for providing the cutaway view after first key zoarium and the second bonding body.
Fig. 8 is the cutaway view contacting with pad by salient point.
Fig. 9 is the cutaway view after first key zoarium and the second bonding body bonding.
Figure 10 ~ Figure 12 is the concrete steps cutaway view of the present invention and the second bonding body bonding, wherein:
Figure 10 is for providing the cutaway view after first key zoarium and the second bonding body.
Figure 11 is the cutaway view contacting with pad by salient point.
Figure 12 is the cutaway view after first key zoarium and the second bonding body bonding.
Description of reference numerals: 1-first key zoarium, 2-the second bonding body, 10-the first substrate, 20-the first dielectric adhesion layer, 21-the first photoresist layer, 22-Bonding interconnect hole, 25-the second dielectric adhesion layer, 30-high temperature bonding metal, 31-cavity, 40-low melting material bonding body, 50-pad, 60-salient point top and 70-the second substrate.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As depicted in figs. 1 and 2: open circuit and integrity problem for fear of causing in existing bonding process, the present invention includes first key zoarium 1, first key zoarium 1 comprises the first substrate 10; Described the first substrate 10 is provided with the Bonding interconnect metal being electrically connected with the first substrate 10, described Bonding interconnect metal pair should cave in and form cavity 31 with the other end that the first substrate 10 is connected, should form the end formation salient point top 60 of cavity 31 at Bonding interconnect metal pair, the corresponding Bonding interconnect metallic surface that forms of the first substrate 10 is coated with the first dielectric adhesion layer 20, and described the first dielectric adhesion layer 20 surrounds the height of Bonding interconnect metal and the first dielectric adhesion layer 20 lower than the height of Bonding interconnect metal end; The height of the first dielectric adhesion layer 20 is lower than salient point top 60.Fig. 1 and Fig. 2 show respectively the different structure of Bonding interconnect metal, wherein, in Fig. 1, Bonding interconnect metal all adopts high temperature bonding metal 30, in Fig. 2, Bonding interconnect metal comprises high temperature bonding metal 30 and is positioned at the low melting material bonding body 40 of described high temperature bonding metal 30 ends, forms cavity 31 in low melting material bonding body 40 ends by caving in.The height low melting point solder 40 of the first dielectric adhesion layer 20 forms the height of cavity 31 ends.
The material of described high temperature bonding metal 30 is one or more in Cu, Ni, Al, Pt, Pd or Au.Described low melting point solder 40 is kamash alloy or indium-base alloy.The material of described the first dielectric adhesion layer 20 comprise BCB, SU-8,, PI polymer or SiO 2.
As shown in Fig. 9 and Figure 12: be the structural representation after first key of the present invention fit 1 and the second bonding body 2 bondings.The second bonding body 2 comprises that the surface of the second substrate 70, the second substrates 70 is provided with pad 50, and pad 50 is electrically connected with the second substrate 70, and the material of the second substrate 70 comprises silicon.The corresponding surface coverage that forms pad 50 of the second substrate 70 has the second dielectric adhesion layer 25, height relationships between pad 50 and the second dielectric adhesion layer 25 should and salient point top 60 and the first dielectric adhesion layer 20 between height relationships corresponding, to avoid when between salient point top 60 and pad 50, bonding is connected, the first dielectric adhesion layer 20 or 25 of the second dielectric adhesion layers are pressed into the first dielectric adhesion layer 20 or the second dielectric adhesion layer 25, open circuit and integrity problem is as the criterion can not cause.In embodiments of the invention, the height of pad 50 is not higher than the height of the second dielectric adhesion layer 25, Fig. 9 is the height of pad 50 and structure chart after the highly identical bonding of the second dielectric adhesion layer 25, and Figure 12 is the height of pad 50 structure chart after lower than the second dielectric adhesion layer 25 height bondings.
Pad 50 can be high temperature bonding metal, can be also the combination of low melting point solder or bi-material, and the material of the second dielectric adhesion layer 25 can be identical with the material of the first dielectric adhesion layer 20.When bonding, first key zoarium 1 contacts with pad 50 by the salient point top 60 on Bonding interconnect metal, under required bonding temperature and bonding pressure effect, Bonding interconnect metal and pad 50 energy close contacts, the first dielectric adhesion layer 20 is connected with after the second dielectric adhesion layer 25 bondings simultaneously.Because salient point top 60 is positioned at the end edge of Bonding interconnect metal, the height of the first dielectric adhesion layer 20 is lower than salient point top 60, in the time of bonding under pressure, salient point top 60 can stop that the first dielectric adhesion layer 20 enters the surface of bonding interconnecting metal and pad 25 combinations, opens circuit and integrity problem thereby can avoid causing.After bonding connects, the first substrate 10 is electrically connected by Bonding interconnect metal and pad 50 with the second substrate 70.
As shown in Fig. 7 ~ Fig. 9 and Figure 10 ~ Figure 12: bonding side's method of above-mentioned bonding structure comprises the steps:
A, provide first key zoarium 1, on described first key zoarium 1, the end of corresponding Bonding interconnect metal forms cavity 31 and salient point top 60;
As shown in Fig. 3 ~ Fig. 6: be the forming process of first key zoarium 1 of the present invention, the preparation process of first key zoarium 1 comprises the steps:
A1, provide the first substrate 10, and make on the surface of described the first substrate 10 Seed Layer being electrically connected with the first substrate 10; The first substrate 10 is conductor or semi-conducting material, and Seed Layer is electrically connected with the first substrate 10;
A2, at corresponding surface-coated the first photoresist layer (21) that forms Seed Layer of the first substrate (10), and form required figure after photoetching, development exposure;
A3, on above-mentioned the first substrate 10, electroplate the convex point material that forms desired height and shape, to form Bonding interconnect metal;
As shown in Figure 3: the shape of described Bonding interconnect metal with highly can form by plating, Bonding interconnect metal can be the structure in Fig. 1 or Fig. 2; Bonding interconnect metal is electrically connected with the first substrate 10 by Seed Layer; Salient point can be the combination of high temperature bonding metal 30 or high temperature bonding metal 30 and low melting point solder 40, to form Bonding interconnect metal;
A4, remove above-mentioned the first photoresist layer 21, and corresponding exposed Seed Layer on etching the first substrate 10;
By by exposed Seed Layer etching, can avoid the intermetallic insulation isolation of Bonding interconnect on the first substrate 10, as shown in Figure 4;
A5, on above-mentioned the first substrate 10, form the first dielectric adhesion layer 20, described the first dielectric adhesion layer 20 covers the surface of the first substrate 10 and covers the salient point top 60 of Bonding interconnect metal end;
As shown in Figure 5: the first dielectric adhesion layer 20 forms by whirl coating or other modes;
A6, remove the first dielectric adhesion layer 20 being covered in Bonding interconnect metal end salient point top 60 by ion etching, and make the height of the first dielectric adhesion layer 20 lower than the height of salient point top 60, to form required first key zoarium 1, as shown in Figure 6;
B, provide the second bonding body 2, on described the second bonding body 2, comprise pad 50 and the second dielectric adhesion layer 25;
C, the end that Bonding interconnect metal pair should be formed to salient point top 60 are located and are contacted with the pad 50 on the second bonding body 2;
D, under required bonding temperature and pressure, Bonding interconnect metal pair should form end and pad 50 close contacts of salient point top 60, and the second dielectric adhesion layer 25 on the first dielectric adhesion layer 20 and the second bonding body 2 on first key zoarium 1 is bonded to one.Described bonding temperature and pressure decide according to the material of Bonding interconnect metal and pad 50, and corresponding pressure has corresponding relation with required temperature, consistent with conventional bonding temperature and pressure, herein not at detailed description.
On the second bonding body 2, the height of pad 50 and the second dielectric adhesion layer 25 has corresponding relation, and in embodiments of the invention, the height of pad 50 is not higher than the height of the second dielectric adhesion layer 25.When the height of pad 50 and the height of the second dielectric adhesion layer 25 are when consistent, the key of first key fit 1 and the second bonding body 2 and step are with reference to shown in figure 7 ~ Fig. 9; When the height of pad 50 is during lower than the height of the second dielectric adhesion layer 25, the bonding step of first key fit 1 and the second bonding body 2 is with reference to shown in Figure 10 ~ Figure 12.When the height of pad 50 is during lower than the height of the second dielectric adhesion layer 25, the location when being conducive to salient point top 60 and contacting with pad 50 is not easy dislocation simultaneously in bonding process.
The present invention's the first substrate 10 is provided with the Bonding interconnect metal being electrically connected with the first substrate 10, described Bonding interconnect metal pair should cave in and form cavity 31 with the other end that the first substrate 10 is connected, and the end edge that Bonding interconnect metal pair should arrange cavity 31 forms salient point top 60; The corresponding Bonding interconnect metallic surface that forms of the first substrate 10 is coated with the first dielectric adhesion layer 20, and described the first dielectric adhesion layer 20 surrounds the height of Bonding interconnect metal and the first dielectric adhesion layer 20 lower than the height of Bonding interconnect metal; When by Bonding interconnect metal and pad 50 bonding, salient point top 60 is positioned at the end edge of Bonding interconnect metal, the height of the first dielectric adhesion layer 20 is lower than salient point top 60, in the time of bonding under pressure, salient point top 60 can stop that the first dielectric adhesion layer 20 enters the surface of bonding interconnecting metal and pad 25 combinations, opens circuit and integrity problem thereby can avoid causing; Compact conformation, technological operation is convenient.

Claims (2)

1. for the integrated hybrid bonded structure of three-dimensional, comprise the first substrate (10); It is characterized in that: described the first substrate (10) is provided with the Bonding interconnect metal being electrically connected with the first substrate (10), cave in and form cavity (31) in the other end that described Bonding interconnect metal pair should be connected with the first substrate (10), the end edge that Bonding interconnect metal pair should arrange cavity (31) forms salient point top (60); The corresponding Bonding interconnect metallic surface that forms of the first substrate (10) is coated with the first dielectric adhesion layer (20), and described the first dielectric adhesion layer (20) surrounds the height of Bonding interconnect metal and the first dielectric adhesion layer (20) lower than the height of Bonding interconnect metal;
Described Bonding interconnect metal is high temperature bonding metal (30);
The material of described high temperature bonding metal (30) is one or more in Cu, Ni, Al, Pt, Pd or Au;
Described Bonding interconnect metal comprises high temperature bonding metal (30) and is positioned at the low melting point solder (40) of described high temperature bonding metal (30) one end, be connected corresponding with the first substrate (10) of high temperature bonding metal (30) in Bonding interconnect metal, and the formation cavity (31) that caves in the end of low melting point solder (40); The height of the first dielectric adhesion layer (20) forms the height of cavity (31) end lower than low melting point solder (40);
Described low melting point solder (40) is kamash alloy or indium-base alloy;
The material of described the first dielectric adhesion layer (20) comprises BCB, SU-8, PI polymer or SiO 2;
Described the first substrate (10) is by Bonding interconnect metal and the second bonding body (2) corresponding matching, the second bonding body (2) comprises the second substrate (70), the surface of described the second substrate (70) is provided with the pad (50) being electrically connected with the second substrate (70), corresponding surface coverage the second dielectric adhesion layer (25) that forms pad (50) of the second substrate (70); Bonding interconnect metal passes through salient point top (60) contact corresponding to pad (50), and combines closely under required temperature and pressure, and the first dielectric adhesion layer (20) is connected with after the second dielectric adhesion layer (25) bonding;
The material of described pad (50) is high-temperature metal or low melting point solder;
The material of described the second dielectric adhesion layer (25) comprises BCB, PI polymer or SiO 2;
The material of described the second substrate (70) comprises silicon.
2. for a bonding method for the integrated hybrid bonded structure of three-dimensional, it is characterized in that, described bonding method comprises the steps:
(a), provide first key zoarium (1), end formation cavity (31) and the salient point top (60) of the upper corresponding Bonding interconnect metal of described first key zoarium (1);
(b), the second bonding body (2) is provided, on described the second bonding body (2), comprise pad (50) and the second dielectric adhesion layer (25);
(c), Bonding interconnect metal pair should be formed to the end of salient point top (60) contacts with pad (50) location on the second bonding body (2);
(d), under required bonding temperature and pressure, Bonding interconnect metal pair should form end and pad (50) close contact of salient point top (60), and the first dielectric adhesion layer (20) on first key zoarium (1) is bonded to one with the second dielectric adhesion layer (25) on the second bonding body (2);
In described step (a), comprise the steps:
(a1), the first substrate (10) is provided, and make on the surface of described the first substrate (10) Seed Layer being electrically connected with the first substrate (10);
(a2), at corresponding surface-coated the first photoresist layer (21) that forms Seed Layer of the first substrate (10), and form required figure after photoetching, development exposure;
(a3), form the convex point material with desired height and shape upper plating of above-mentioned the first substrate (10), to form Bonding interconnect metal;
(a4), remove above-mentioned the first photoresist layer (21), and the upper corresponding exposed Seed Layer of etching the first substrate (10);
(a5), at the upper first dielectric adhesion layer (20) that forms of above-mentioned the first substrate (10), described the first dielectric adhesion layer (20) covers the surface of the first substrate (10) and covers the salient point top (60) of Bonding interconnect metal end;
(a6), remove by ion etching the first dielectric adhesion layer (20) being covered in Bonding interconnect metal end salient point top (60), and make the height of the first dielectric adhesion layer (20) lower than the height of salient point top (60), to form required first key zoarium (1);
Described the first dielectric adhesion layer (20) covers on the first substrate (10) and Bonding interconnect metal by whirl coating;
In described step (a3), the convex point material of electroplating formation desired height and shape comprises high-temperature metal or low melting point solder.
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