CN102163800B - 控制波长可调激光器的方法 - Google Patents

控制波长可调激光器的方法 Download PDF

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Publication number
CN102163800B
CN102163800B CN201110043162XA CN201110043162A CN102163800B CN 102163800 B CN102163800 B CN 102163800B CN 201110043162X A CN201110043162X A CN 201110043162XA CN 201110043162 A CN201110043162 A CN 201110043162A CN 102163800 B CN102163800 B CN 102163800B
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wavelength
settings
wavelength selection
selection portion
laser
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Chinese (zh)
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CN102163800A (zh
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柴田雅央
田中宏和
石川务
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06837—Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
CN201110043162XA 2010-02-18 2011-02-18 控制波长可调激光器的方法 Active CN102163800B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-033273 2010-02-18
JP2010033273A JP5457873B2 (ja) 2010-02-18 2010-02-18 波長可変レーザの制御方法

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CN102163800A CN102163800A (zh) 2011-08-24
CN102163800B true CN102163800B (zh) 2013-05-01

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US (2) US8311068B2 (https=)
EP (1) EP2362505B1 (https=)
JP (1) JP5457873B2 (https=)
CN (1) CN102163800B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130070795A1 (en) * 2011-09-16 2013-03-21 Sumitomo Electric Industries, Ltd. Method to switch emission wavelength of tunable laser diode
US9172211B2 (en) * 2011-11-09 2015-10-27 Thorlabs Quantum Electronics, Inc. Heating elements for multi-wavelength DBR laser
JP5877727B2 (ja) * 2012-02-14 2016-03-08 日本オクラロ株式会社 半導体光変調素子及び光モジュール
JP6416462B2 (ja) * 2013-06-13 2018-10-31 住友電工デバイス・イノベーション株式会社 波長可変レーザ装置
JP6292499B2 (ja) * 2013-08-30 2018-03-14 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP6382506B2 (ja) * 2013-11-29 2018-08-29 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
US9531155B2 (en) * 2014-04-09 2016-12-27 Applied Optoelectronics, Inc. Switched radio frequency (RF) driver for tunable laser with multiple in-line sections
JP6422150B2 (ja) * 2014-07-03 2018-11-14 住友電気工業株式会社 波長可変レーザ装置および波長切替方法
EP3213805B1 (en) 2014-10-30 2022-09-14 Fuji Filter Manufacturing Co., Ltd. Hollow tubular filter
CN107566076B (zh) * 2016-06-30 2020-10-16 中兴通讯股份有限公司 波分网元的波长自适应调谐方法及装置
JP6821901B2 (ja) 2016-07-11 2021-01-27 住友電工デバイス・イノベーション株式会社 波長可変レーザの駆動条件設定方法及び波長可変レーザシステム
CN111786258A (zh) * 2020-06-12 2020-10-16 芯思杰技术(深圳)股份有限公司 光电二极管芯片及制作方法
WO2021249541A1 (zh) * 2020-06-12 2021-12-16 芯思杰技术(深圳)股份有限公司 光电二极管及其芯片、芯片制作方法、波长控制方法和装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0931371A1 (en) * 1997-08-11 1999-07-28 Eci Telecom Ltd. Device and method for monitoring and controlling laser wavelength
US6870865B2 (en) * 2000-04-26 2005-03-22 Canon Kabushiki Kaisha Laser oscillation apparatus, exposure apparatus, semiconductor device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method
CN101350498A (zh) * 2007-07-20 2009-01-21 优迪那半导体有限公司 半导体激光器的控制方法

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US5960259A (en) * 1995-11-16 1999-09-28 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
JP3334787B2 (ja) * 1996-05-22 2002-10-15 松下電器産業株式会社 光源の発振波長安定化装置及び光源の高調波出力安定化装置とそれらを使用した光ディスクシステム
JP2895014B2 (ja) * 1997-01-23 1999-05-24 日本電気株式会社 イオンレーザ装置
FI982843A7 (fi) * 1998-12-31 2000-07-01 Nokia Corp Laserlähetin
JP4104925B2 (ja) * 2002-07-10 2008-06-18 三菱電機株式会社 波長可変半導体レーザの波長制御装置
JP4657853B2 (ja) * 2005-08-11 2011-03-23 住友電工デバイス・イノベーション株式会社 半導体レーザ、レーザモジュール、光学部品、レーザ装置、半導体レーザの製造方法および半導体レーザの制御方法
JP4283869B2 (ja) * 2007-04-05 2009-06-24 ユーディナデバイス株式会社 光半導体装置および光半導体装置の制御方法
CN101971445B (zh) * 2008-02-05 2012-11-07 住友电工光电子器件创新株式会社 激光设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0931371A1 (en) * 1997-08-11 1999-07-28 Eci Telecom Ltd. Device and method for monitoring and controlling laser wavelength
US6870865B2 (en) * 2000-04-26 2005-03-22 Canon Kabushiki Kaisha Laser oscillation apparatus, exposure apparatus, semiconductor device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method
EP1158629B1 (en) * 2000-04-26 2006-06-28 Canon Kabushiki Kaisha Laser control apparatus, exposure apparatus and semiconductor device manufacturing method
CN101350498A (zh) * 2007-07-20 2009-01-21 优迪那半导体有限公司 半导体激光器的控制方法

Also Published As

Publication number Publication date
JP2011171472A (ja) 2011-09-01
JP5457873B2 (ja) 2014-04-02
US20110200062A1 (en) 2011-08-18
EP2362505A2 (en) 2011-08-31
EP2362505A3 (en) 2015-12-02
EP2362505B1 (en) 2017-12-13
US20130039370A1 (en) 2013-02-14
US8311068B2 (en) 2012-11-13
CN102163800A (zh) 2011-08-24
US8457166B2 (en) 2013-06-04

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