CN102157550B - 一种具有p埋层的纵向沟道SOI LIGBT器件单元 - Google Patents
一种具有p埋层的纵向沟道SOI LIGBT器件单元 Download PDFInfo
- Publication number
- CN102157550B CN102157550B CN201110056339XA CN201110056339A CN102157550B CN 102157550 B CN102157550 B CN 102157550B CN 201110056339X A CN201110056339X A CN 201110056339XA CN 201110056339 A CN201110056339 A CN 201110056339A CN 102157550 B CN102157550 B CN 102157550B
- Authority
- CN
- China
- Prior art keywords
- type
- region
- well region
- district
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract description 4
- 239000010703 silicon Substances 0.000 title abstract description 4
- 239000012212 insulator Substances 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 229920005591 polysilicon Polymers 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000003139 buffering effect Effects 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 230000000694 effects Effects 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- -1 phosphonium ion Chemical class 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110056339XA CN102157550B (zh) | 2011-03-10 | 2011-03-10 | 一种具有p埋层的纵向沟道SOI LIGBT器件单元 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110056339XA CN102157550B (zh) | 2011-03-10 | 2011-03-10 | 一种具有p埋层的纵向沟道SOI LIGBT器件单元 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102157550A CN102157550A (zh) | 2011-08-17 |
CN102157550B true CN102157550B (zh) | 2012-07-04 |
Family
ID=44438885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110056339XA Expired - Fee Related CN102157550B (zh) | 2011-03-10 | 2011-03-10 | 一种具有p埋层的纵向沟道SOI LIGBT器件单元 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102157550B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104425579B (zh) * | 2013-08-28 | 2017-09-29 | 无锡华润上华半导体有限公司 | 绝缘体上硅反向导通横向绝缘栅双极晶体管及其制备方法 |
CN105789298B (zh) | 2014-12-19 | 2019-06-07 | 无锡华润上华科技有限公司 | 横向绝缘栅双极型晶体管及其制造方法 |
CN107527811B (zh) * | 2016-06-21 | 2020-07-10 | 无锡华润上华科技有限公司 | 横向绝缘栅双极型晶体管及其制造方法 |
CN110190113B (zh) * | 2019-05-16 | 2022-03-08 | 东南大学 | 一种消除负阻效应的阳极短路型横向绝缘栅双极型晶体管 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6091107A (en) * | 1997-01-21 | 2000-07-18 | Mitel Semiconductor Limited | Semiconductor devices |
CN101901830A (zh) * | 2009-11-09 | 2010-12-01 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的正反导通横向绝缘栅双极晶体管 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7465964B2 (en) * | 2005-12-30 | 2008-12-16 | Cambridge Semiconductor Limited | Semiconductor device in which an injector region is isolated from a substrate |
-
2011
- 2011-03-10 CN CN201110056339XA patent/CN102157550B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6091107A (en) * | 1997-01-21 | 2000-07-18 | Mitel Semiconductor Limited | Semiconductor devices |
CN101901830A (zh) * | 2009-11-09 | 2010-12-01 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的正反导通横向绝缘栅双极晶体管 |
Also Published As
Publication number | Publication date |
---|---|
CN102157550A (zh) | 2011-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11211485B2 (en) | Trench power transistor | |
CN104201206A (zh) | 一种横向soi功率ldmos器件 | |
CN102231390B (zh) | 一种超结结构的纵向双扩散金属氧化物半导体功率器件 | |
CN102683403A (zh) | 一种沟槽栅电荷存储型igbt | |
CN209183552U (zh) | 一种复合栅双极型晶体管器件 | |
CN102005473B (zh) | 具有改进终端的igbt | |
CN103474466A (zh) | 一种高压器件及其制造方法 | |
CN109449202A (zh) | 一种逆导双极型晶体管 | |
CN102157550B (zh) | 一种具有p埋层的纵向沟道SOI LIGBT器件单元 | |
CN107170801B (zh) | 一种提高雪崩耐量的屏蔽栅vdmos器件 | |
CN204632762U (zh) | 结终端延伸的终端版图结构及其终端结构 | |
CN103515443B (zh) | 一种超结功率器件及其制造方法 | |
CN103325835B (zh) | 一种具有结型场板的soi功率ldmos器件 | |
CN202018966U (zh) | 具有p埋层的纵向沟道SOI LIGBT器件单元 | |
CN201374335Y (zh) | 集成纵向沟道soi ldmos器件单元 | |
CN201681942U (zh) | 一种纵向沟道soi ldmos单元 | |
CN202058737U (zh) | 具有p埋层的横向沟道soi ligbt器件单元 | |
CN102169893B (zh) | 一种具有p埋层的横向沟道soi ligbt器件单元 | |
CN103928507B (zh) | 一种逆导型双栅绝缘栅双极型晶体管 | |
CN105355656A (zh) | 能降低米勒电容的超结igbt器件 | |
CN115050815A (zh) | 一种自保护的半导体结构及制造方法 | |
CN102097482B (zh) | 集成双纵向沟道soi ldmos器件单元 | |
CN102176469A (zh) | 一种具有p埋层的SOI nLDMOS器件单元 | |
CN203179895U (zh) | 一种具有场截止结构的igbt | |
CN109755304B (zh) | 一种分栅igbt功率器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HAIAN SERVICE CENTER FOR TRANSFORMATION OF SCIENTI Free format text: FORMER OWNER: HANGZHOU ELECTRONIC SCIENCE AND TECHNOLOGY UNIV Effective date: 20140618 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 310018 HANGZHOU, ZHEJIANG PROVINCE TO: 226600 NANTONG, JIANGSU PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140618 Address after: 226600 No. 106 middle Yangtze Road, Haian County, Nantong, Jiangsu Patentee after: SERVICE CENTER OF COMMERCIALIZATION OF RESEARCH FINDINGS, HAIAN COUNTY Address before: Hangzhou City, Zhejiang province 310018 Xiasha Higher Education Park No. 2 street Patentee before: HANGZHOU DIANZI University |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 |
|
CF01 | Termination of patent right due to non-payment of annual fee |