CN102130156B - 薄膜晶体管、开关电路以及场效应晶体管 - Google Patents
薄膜晶体管、开关电路以及场效应晶体管 Download PDFInfo
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- CN102130156B CN102130156B CN201110002057.1A CN201110002057A CN102130156B CN 102130156 B CN102130156 B CN 102130156B CN 201110002057 A CN201110002057 A CN 201110002057A CN 102130156 B CN102130156 B CN 102130156B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010003575A JP5600255B2 (ja) | 2010-01-12 | 2010-01-12 | 表示装置、スイッチング回路および電界効果トランジスタ |
JP2010-003575 | 2010-01-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102130156A CN102130156A (zh) | 2011-07-20 |
CN102130156B true CN102130156B (zh) | 2015-10-07 |
Family
ID=44257842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110002057.1A Expired - Fee Related CN102130156B (zh) | 2010-01-12 | 2011-01-06 | 薄膜晶体管、开关电路以及场效应晶体管 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8928044B2 (zh) |
JP (1) | JP5600255B2 (zh) |
KR (1) | KR20110083511A (zh) |
CN (1) | CN102130156B (zh) |
TW (1) | TWI440185B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013161895A (ja) * | 2012-02-03 | 2013-08-19 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
JP2013168341A (ja) * | 2012-02-17 | 2013-08-29 | Seiko Epson Corp | 有機el装置および電子機器 |
TWI621270B (zh) * | 2013-02-07 | 2018-04-11 | 群創光電股份有限公司 | 薄膜電晶體元件與薄膜電晶體顯示裝置 |
CN103985761B (zh) * | 2013-02-07 | 2017-04-12 | 群创光电股份有限公司 | 薄膜晶体管元件与薄膜晶体管显示装置 |
KR102140302B1 (ko) | 2013-09-06 | 2020-08-03 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 유기 발광 표시 장치 제조용 포토 마스크 |
KR20150054040A (ko) | 2013-11-08 | 2015-05-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 포함하는 유기 발광 표시 장치 |
CN104157612A (zh) * | 2014-08-21 | 2014-11-19 | 深圳市华星光电技术有限公司 | Tft阵列基板的制作方法及tft阵列基板结构 |
CN104319279B (zh) * | 2014-11-10 | 2017-11-14 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
TWI559549B (zh) | 2014-12-30 | 2016-11-21 | 鴻海精密工業股份有限公司 | 薄膜電晶體及其製作方法 |
CN105824160B (zh) * | 2015-01-08 | 2020-06-16 | 群创光电股份有限公司 | 显示面板 |
TWI567950B (zh) * | 2015-01-08 | 2017-01-21 | 群創光電股份有限公司 | 顯示面板 |
CN106373966B (zh) * | 2016-09-27 | 2020-03-13 | 上海中航光电子有限公司 | 阵列基板、显示面板及显示装置 |
CN106653763B (zh) | 2016-09-27 | 2019-07-05 | 上海中航光电子有限公司 | 阵列基板、显示面板及显示装置 |
CN107481668B (zh) * | 2017-09-01 | 2020-07-24 | 上海天马有机发光显示技术有限公司 | 一种显示面板及显示装置 |
KR20210142023A (ko) | 2020-05-14 | 2021-11-24 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치 |
CN112736094A (zh) * | 2020-12-30 | 2021-04-30 | 武汉华星光电技术有限公司 | 显示面板及显示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1619399A (zh) * | 2003-11-22 | 2005-05-25 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其制造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61226669A (ja) | 1985-03-30 | 1986-10-08 | Japan Radio Co Ltd | レ−ダアンテナの方位信号逓倍回路 |
JPH05121439A (ja) | 1991-10-25 | 1993-05-18 | Sharp Corp | 薄膜トランジスタの製造方法 |
JPH07147411A (ja) * | 1993-11-24 | 1995-06-06 | Sony Corp | 表示素子基板用半導体装置 |
JPH0982969A (ja) * | 1995-09-12 | 1997-03-28 | Toshiba Corp | 薄膜トランジスタおよび液晶表示装置 |
GB9606083D0 (en) * | 1996-03-22 | 1996-05-22 | Philips Electronics Nv | Electronic device manufacture |
JP3501732B2 (ja) | 2000-06-23 | 2004-03-02 | 日本電気通信システム株式会社 | パラレルシリアル変換回路 |
US6686300B2 (en) | 2000-12-27 | 2004-02-03 | Texas Instruments Incorporated | Sub-critical-dimension integrated circuit features |
JP3551952B2 (ja) | 2001-10-30 | 2004-08-11 | ソニー株式会社 | アクティブマトリクス型表示装置 |
JP2005079476A (ja) * | 2003-09-02 | 2005-03-24 | Sony Corp | 液晶表示装置およびその製造方法 |
US7939861B2 (en) * | 2007-02-02 | 2011-05-10 | Synopsys, Inc. | Non-volatile memory devices having floating-gates FETs with different source-gate and drain-gate border lengths |
US7692217B2 (en) * | 2007-11-30 | 2010-04-06 | Texas Instruments Incorporated | Matched analog CMOS transistors with extension wells |
JP2009182173A (ja) | 2008-01-31 | 2009-08-13 | Fujitsu Ltd | グラフェントランジスタ及び電子機器 |
US7982247B2 (en) * | 2008-08-19 | 2011-07-19 | Freescale Semiconductor, Inc. | Transistor with gain variation compensation |
-
2010
- 2010-01-12 JP JP2010003575A patent/JP5600255B2/ja not_active Expired - Fee Related
-
2011
- 2011-01-04 KR KR1020110000511A patent/KR20110083511A/ko not_active Application Discontinuation
- 2011-01-04 TW TW100100193A patent/TWI440185B/zh not_active IP Right Cessation
- 2011-01-05 US US12/984,767 patent/US8928044B2/en not_active Expired - Fee Related
- 2011-01-06 CN CN201110002057.1A patent/CN102130156B/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1619399A (zh) * | 2003-11-22 | 2005-05-25 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102130156A (zh) | 2011-07-20 |
TWI440185B (zh) | 2014-06-01 |
TW201138118A (en) | 2011-11-01 |
JP2011146410A (ja) | 2011-07-28 |
US8928044B2 (en) | 2015-01-06 |
JP5600255B2 (ja) | 2014-10-01 |
KR20110083511A (ko) | 2011-07-20 |
US20110169001A1 (en) | 2011-07-14 |
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