CN102124414A - 光致抗蚀剂剥离剂组合物以及光致抗蚀剂剥离方法 - Google Patents
光致抗蚀剂剥离剂组合物以及光致抗蚀剂剥离方法 Download PDFInfo
- Publication number
- CN102124414A CN102124414A CN2010800022867A CN201080002286A CN102124414A CN 102124414 A CN102124414 A CN 102124414A CN 2010800022867 A CN2010800022867 A CN 2010800022867A CN 201080002286 A CN201080002286 A CN 201080002286A CN 102124414 A CN102124414 A CN 102124414A
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- CN
- China
- Prior art keywords
- copper
- photoresist
- weight
- water
- release agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009100579 | 2009-04-17 | ||
JP2009-100579 | 2009-04-17 | ||
PCT/JP2010/055034 WO2010119753A1 (ja) | 2009-04-17 | 2010-03-24 | フォトレジスト剥離剤組成物及びフォトレジスト剥離方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102124414A true CN102124414A (zh) | 2011-07-13 |
CN102124414B CN102124414B (zh) | 2014-04-02 |
Family
ID=42982418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080002286.7A Active CN102124414B (zh) | 2009-04-17 | 2010-03-24 | 光致抗蚀剂剥离剂组合物以及光致抗蚀剂剥离方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4725905B2 (zh) |
KR (1) | KR101668126B1 (zh) |
CN (1) | CN102124414B (zh) |
TW (1) | TWI617901B (zh) |
WO (1) | WO2010119753A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106200283A (zh) * | 2013-09-02 | 2016-12-07 | 松下知识产权经营株式会社 | 抗蚀剂剥离液 |
CN112130428A (zh) * | 2013-11-15 | 2020-12-25 | 达兴材料股份有限公司 | 光阻脱除剂和电子元件及其制造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5717519B2 (ja) * | 2011-04-15 | 2015-05-13 | パナソニック株式会社 | フォトレジスト用剥離液 |
CN103688222B (zh) * | 2011-05-20 | 2016-11-16 | 松下知识产权经营株式会社 | 光致抗蚀剂用剥离液、剥离液循环系统和运转方法以及剥离液的循环方法 |
JP5809444B2 (ja) * | 2011-05-20 | 2015-11-10 | パナソニック株式会社 | フォトレジスト用剥離液 |
EP3011810A4 (en) * | 2013-06-21 | 2017-04-05 | Sanmina Corporation | Method of forming a laminate structure having a plated through-hole using a removable cover layer |
JP2015011096A (ja) * | 2013-06-27 | 2015-01-19 | パナソニックIpマネジメント株式会社 | フォトレジスト用剥離液 |
JP6158060B2 (ja) * | 2013-12-10 | 2017-07-05 | 花王株式会社 | 半田フラックス残渣除去用洗浄剤組成物 |
JP2015011356A (ja) * | 2014-07-18 | 2015-01-19 | パナソニックIpマネジメント株式会社 | フォトレジスト用剥離液 |
JPWO2017065153A1 (ja) * | 2015-10-13 | 2018-07-26 | ナガセケムテックス株式会社 | フォトレジスト剥離液 |
JP2017075992A (ja) * | 2015-10-13 | 2017-04-20 | ナガセケムテックス株式会社 | フォトレジスト剥離液 |
JP6808730B2 (ja) | 2016-06-03 | 2021-01-06 | 富士フイルム株式会社 | 処理液、基板洗浄方法およびレジストの除去方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB652339A (en) * | 1947-12-09 | 1951-04-18 | Procter & Gamble | Compositions for inhibiting metal tarnish |
WO2002033033A1 (en) * | 2000-10-16 | 2002-04-25 | Mallinckrodt Baker, Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
JP2007510307A (ja) * | 2003-10-29 | 2007-04-19 | マリンクロッド・ベイカー・インコーポレイテッド | ハロゲン化金属の腐食阻害剤を含有するアルカリ性のプラズマエッチング/灰化後の残渣の除去剤およびフォトレジスト剥離組成物 |
WO2008080097A2 (en) * | 2006-12-21 | 2008-07-03 | Advanced Technology Materials, Inc. | Liquid cleaner for the removal of post-etch residues |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001350276A (ja) | 2000-06-05 | 2001-12-21 | Nagase Kasei Kogyo Kk | フォトレジスト剥離剤組成物及びその使用方法 |
JP3402365B2 (ja) | 2000-06-28 | 2003-05-06 | 日本電気株式会社 | 防食剤 |
JP3421333B2 (ja) * | 2002-04-03 | 2003-06-30 | 日立化成工業株式会社 | 水溶性レジストの剥離方法及び剥離液 |
US7534753B2 (en) * | 2006-01-12 | 2009-05-19 | Air Products And Chemicals, Inc. | pH buffered aqueous cleaning composition and method for removing photoresist residue |
JP4716225B2 (ja) | 2007-05-15 | 2011-07-06 | ナガセケムテックス株式会社 | フォトレジスト剥離剤組成物 |
-
2010
- 2010-03-24 CN CN201080002286.7A patent/CN102124414B/zh active Active
- 2010-03-24 KR KR1020117002294A patent/KR101668126B1/ko active IP Right Grant
- 2010-03-24 JP JP2010550981A patent/JP4725905B2/ja active Active
- 2010-03-24 WO PCT/JP2010/055034 patent/WO2010119753A1/ja active Application Filing
- 2010-04-09 TW TW099111043A patent/TWI617901B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB652339A (en) * | 1947-12-09 | 1951-04-18 | Procter & Gamble | Compositions for inhibiting metal tarnish |
WO2002033033A1 (en) * | 2000-10-16 | 2002-04-25 | Mallinckrodt Baker, Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
JP2007510307A (ja) * | 2003-10-29 | 2007-04-19 | マリンクロッド・ベイカー・インコーポレイテッド | ハロゲン化金属の腐食阻害剤を含有するアルカリ性のプラズマエッチング/灰化後の残渣の除去剤およびフォトレジスト剥離組成物 |
WO2008080097A2 (en) * | 2006-12-21 | 2008-07-03 | Advanced Technology Materials, Inc. | Liquid cleaner for the removal of post-etch residues |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106200283A (zh) * | 2013-09-02 | 2016-12-07 | 松下知识产权经营株式会社 | 抗蚀剂剥离液 |
CN106200283B (zh) * | 2013-09-02 | 2017-11-03 | 松下知识产权经营株式会社 | 抗蚀剂剥离液 |
CN112130428A (zh) * | 2013-11-15 | 2020-12-25 | 达兴材料股份有限公司 | 光阻脱除剂和电子元件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2010119753A1 (ja) | 2010-10-21 |
KR101668126B1 (ko) | 2016-10-20 |
JPWO2010119753A1 (ja) | 2012-10-22 |
JP4725905B2 (ja) | 2011-07-13 |
CN102124414B (zh) | 2014-04-02 |
TWI617901B (zh) | 2018-03-11 |
TW201042403A (en) | 2010-12-01 |
KR20120000046A (ko) | 2012-01-03 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20110713 Assignee: Wuxi Xicheng microelectronic material Co., Ltd. Assignor: Nagase Chemtex Corp. Contract record no.: 2017990000400 Denomination of invention: Photoresist remover composition and method for removing photoresist Granted publication date: 20140402 License type: Common License Record date: 20171017 |
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EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20110713 Assignee: Mianyang Chenghong Microelectronic Materials Co., Ltd. Assignor: Nagase Chemtex Corp. Contract record no.: 2018990000177 Denomination of invention: Photoresist remover composition and method for removing photoresist Granted publication date: 20140402 License type: Common License Record date: 20180705 |
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EE01 | Entry into force of recordation of patent licensing contract |