CN102112654B - 在基质上形成含钽层的方法 - Google Patents

在基质上形成含钽层的方法 Download PDF

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Publication number
CN102112654B
CN102112654B CN200980130303.2A CN200980130303A CN102112654B CN 102112654 B CN102112654 B CN 102112654B CN 200980130303 A CN200980130303 A CN 200980130303A CN 102112654 B CN102112654 B CN 102112654B
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substrate
carbon atoms
tantalum
alkyl group
formula
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Chinese (zh)
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CN102112654A (zh
Inventor
N·布拉斯科
A·克雷亚-安娜克莱托
A·潘沙尔
A·曹纳
Z·王
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN200980130303.2A 2008-08-01 2009-07-15 在基质上形成含钽层的方法 Active CN102112654B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08305444 2008-08-01
EP08305444.5 2008-08-01
PCT/EP2009/059067 WO2010012595A1 (en) 2008-08-01 2009-07-15 Method of forming a tantalum-containing layer on a substrate

Publications (2)

Publication Number Publication Date
CN102112654A CN102112654A (zh) 2011-06-29
CN102112654B true CN102112654B (zh) 2013-03-20

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Country Status (6)

Country Link
US (1) US9085823B2 (https=)
EP (1) EP2310551B1 (https=)
JP (1) JP5639055B2 (https=)
KR (1) KR101589777B1 (https=)
CN (1) CN102112654B (https=)
WO (1) WO2010012595A1 (https=)

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EP2174942B1 (en) * 2008-10-07 2011-11-30 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Niobium and vanadium organometallic precursors for thin film deposition
TWI551708B (zh) * 2011-07-22 2016-10-01 應用材料股份有限公司 使用金屬前驅物之原子層沉積法
KR102627456B1 (ko) * 2015-12-21 2024-01-19 삼성전자주식회사 탄탈럼 화합물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
JP6803460B2 (ja) * 2016-09-08 2020-12-23 ユーピー ケミカル カンパニー リミテッド ５族金属化合物、その製造方法、それを含む膜蒸着用前駆体組成物、及びそれを用いる膜の蒸着方法
JP7618601B2 (ja) 2019-06-28 2025-01-21 ラム リサーチ コーポレーション 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト
CN111534808A (zh) * 2020-05-19 2020-08-14 合肥安德科铭半导体科技有限公司 一种含Ta薄膜的原子层沉积方法及其产物
KR102530814B1 (ko) * 2020-06-30 2023-05-10 주식회사 이지티엠 박막 증착을 위한 5족 금속 화합물 및 이를 이용한 5족 금속 함유 박막의 형성 방법
CN116134381A (zh) * 2020-07-17 2023-05-16 朗姆研究公司 含钽光致抗蚀剂
JP7587873B2 (ja) * 2022-05-10 2024-11-21 イージーティーエム カンパニー リミテッド 薄膜形成方法およびそれを含むメモリ素子の製造方法
CN117904593B (zh) * 2024-03-15 2024-05-17 上海谱俊科技有限公司 金属工件、金属表面复合涂层及其制备方法

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Also Published As

Publication number Publication date
EP2310551A1 (en) 2011-04-20
EP2310551B1 (en) 2014-04-02
JP5639055B2 (ja) 2014-12-10
KR20110041498A (ko) 2011-04-21
JP2011530002A (ja) 2011-12-15
US20110244681A1 (en) 2011-10-06
CN102112654A (zh) 2011-06-29
US9085823B2 (en) 2015-07-21
WO2010012595A1 (en) 2010-02-04
KR101589777B1 (ko) 2016-01-28

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