JP2011530002A - タンタル含有層を基板上に形成する方法 - Google Patents
タンタル含有層を基板上に形成する方法 Download PDFInfo
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- JP2011530002A JP2011530002A JP2011520419A JP2011520419A JP2011530002A JP 2011530002 A JP2011530002 A JP 2011530002A JP 2011520419 A JP2011520419 A JP 2011520419A JP 2011520419 A JP2011520419 A JP 2011520419A JP 2011530002 A JP2011530002 A JP 2011530002A
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 33
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 239000002243 precursor Substances 0.000 claims abstract description 33
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 24
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract description 9
- 239000013110 organic ligand Substances 0.000 claims abstract description 7
- 125000000962 organic group Chemical group 0.000 claims abstract description 3
- 239000000376 reactant Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 125000000217 alkyl group Chemical group 0.000 claims description 20
- 238000010926 purge Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 239000012634 fragment Substances 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000005046 Chlorosilane Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 5
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 claims description 5
- 238000005121 nitriding Methods 0.000 claims description 5
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- -1 diborane Chemical compound 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 2
- 229960001730 nitrous oxide Drugs 0.000 claims description 2
- 235000013842 nitrous oxide Nutrition 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 claims description 2
- 229910000058 selane Inorganic materials 0.000 claims description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 2
- 229910000059 tellane Inorganic materials 0.000 claims description 2
- VTLHPSMQDDEFRU-UHFFFAOYSA-N tellane Chemical compound [TeH2] VTLHPSMQDDEFRU-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 13
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 125000002524 organometallic group Chemical group 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 239000003446 ligand Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- 125000005103 alkyl silyl group Chemical group 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 150000003949 imides Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 3
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 208000035404 Autolysis Diseases 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 206010057248 Cell death Diseases 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000001246 bromo group Chemical group Br* 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000028043 self proteolysis Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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Abstract
基板上にタンタル含有層を形成する方法であって、少なくとも以下の工程:a)式Cp(R1)mTa(NR2 2)2(=NR3) (I):の少なくとも1種の前駆体化合物を有する蒸気を供給する工程と:ここで:R1は有機配位子であって、各々がH、1ないし6個の炭素原子を有する直鎖または分枝ヒドロカルビル基からなる群において独立して選択され;R2は有機配位子であって、各々がH、1ないし6個の炭素原子を有する直鎖または分枝ヒドロカルビル基からなる群において独立して選択され;R3はH、1ないし6個の炭素原子を有する直鎖または分枝ヒドロカルビル基からなる群において選択される有機基である;b)式(I)の少なくとも1種の化合物を有する蒸気を、原子層堆積プロセスに従って基板と反応させて、基板の少なくとも1つの表面上にタンタル含有錯体の層を形成する工程とを有する方法。
【選択図】 なし
Description
ここで:
R1は有機配位子であって、各々がH、1ないし6個の炭素原子を有する直鎖または分枝ヒドロカルビル基からなる群において独立して選択され;
R2は有機配位子であって、各々がH、1ないし6個の炭素原子を有する直鎖または分枝ヒドロカルビル基からなる群において独立して選択され;
R3はH、1ないし6個の炭素原子を有する直鎖または分枝ヒドロカルビル基からなる群において選択される有機基である;
b)式(I)の少なくとも1種の化合物を有する蒸気を、原子層堆積プロセスに従って基板と反応させて、前記基板の少なくとも1つの表面上にタンタル含有錯体の層を形成する工程。あるいは、R1は有機配位子であって、各々がH、直鎖または分枝の;アルキル、アルキルシリル、アルキルアミド、アルキルシリルアミドおよび/またはアルコキシドからなる群より独立して選択される。R2はアルキル、アルキルシリル、アルキルアミド、アルキルシリルアミドおよび/またはアルコキシドの中で選択されてもよい。R3はアルキル、アルキルシリル、アルキルアミド、アルキルシリルアミドおよび/またはアルコキシドの中で選択されてもよく、好ましくは、R3は3または4個の炭素原子を有するアルキルたとえばイソプロピルまたはtert−ブチルである。
−c)工程b)で得られた形成された錯体の、別種金属のソース、還元性反応物質および/または窒化性反応物質および/または酸化性反応物質より選択される反応物質との反応の工程
をさらに有する本発明による方法。
R2が1ないし3個の炭素原子を有するアルキルであり、より好ましくは、R2が1または2個の炭素原子を有するアルキルであり;および
R3が3または4個の炭素原子を有するアルキルであり、より好ましくは、R3がイソプロピルまたはtert−ブチルである本発明の方法。
(Cp)Ta(=NtBu)(NEt2)2;
(Cp)Ta(=NtBu)(NMe2)2;
(Cp)Ta(=NC5H11)(NMe2)2;
(Cp)Ta(=NtBu)(N(EtMe)2)2;
(Cp)Ta(=NiPr)(NEt2)2;
(Cp)Ta(=NiPr)(NMe2)2;
(MeCp)Ta(=NtBu)(NMe2)2;
(MeCp)Ta(=NiPr)(NMe2)2
からなる群より選択される方法。
1.有機タンタル前駆体。
(Cp)Ta(=NtBu)(NEt2)2
(Cp)Ta(=NtBu)(NMe2)2
(Cp)Ta(=NC5H11)(NMe2)2
(Cp)Ta(=NtBu)(N(EtMe)2)2
(Cp)Ta(=NiPr)(NEt2)2
(Cp)Ta(=NiPr)(NMe2)2
を含む。
TaCp(=NtBu)(NEt2)2をコンテナ内に供給する。コンテナを120℃で加熱しおよびN2をキャリアガスとして50sccmの流量で使用する。アンモニア(NH3)を窒素ソースとして使用する。基板を400℃で加熱する。前駆体をNH3と逐次的に反応チャンバに導入し:第1工程の間TaCp(=NtBu)(NEt2)2のパルスを約8秒間にわたって導入し、13秒のN2パージが続く。NH3のパルスを次に反応チャンバに8秒間にわたって導入し、13秒のN2パージが続く。その後第1工程を再度行う。400サイクルをこのようにして行う。窒化タンタルの膜が得られる。
TaCp(=NtBu)(NEt2)2をコンテナ内に供給する。コンテナを120℃に加熱しおよびN2をキャリアガスとして50sccmの流量で使用する。アンモニア(NH3)を窒素ソースとして使用する。基板を400℃で加熱する。前駆体をトリメチルアルミニウム(TMA)およびNH3と逐次的に反応チャンバに導入する:第1工程の間TaCp(=NtBu)(NEt2)2のパルスを約8秒間にわたって導入し、13秒のN2パージが続く。トリメチルアルミニウム(TMA)のパルスを次に反応チャンバに約8秒間にわたって導入し、13秒のN2パージが続く。NH3のパルスを次に反応チャンバに8秒間にわたって導入し、13秒のN2パージが続く。その後第1工程を再度行う。400サイクルをこのようにして行う。窒化タンタルの膜が得られる。
TaCp(=NtBu)(NEt2)2をコンテナ内に供給する。コンテナを120℃に加熱しおよびN2をキャリアガスとして50sccmの流量で使用する。オゾン(O3)を酸素ソースとして使用する。基板を400℃で加熱する。前駆体をO3と逐次的に反応チャンバに導入する:第1工程の間TaCp(=NtBu)(NEt2)2のパルスを約8秒間にわたって導入し、13秒のN2パージが続く。O3のパルスを次に反応チャンバに8秒間にわたって導入し、13秒のN2パージが続く。その後第1工程を再度行う。400サイクルをこの方法で行う。酸窒化タンタルの膜が得られる。
Claims (12)
- 基板上にタンタル含有層を形成する方法であって、前記方法は少なくとも以下の工程:
a)式Cp(R1)mTa(NR2 2)2(=NR3) (I):
ここで:
R1は有機配位子であって、各々がH、1ないし6個の炭素原子を有する直鎖または分枝ヒドロカルビル基からなる群において独立して選択され;
R2は有機配位子であって、各々がH、1ないし6個の炭素原子を有する直鎖または分枝ヒドロカルビル基からなる群において独立して選択され;
R3はH、1ないし6個の炭素原子を有する直鎖または分枝ヒドロカルビル基からなる群において選択される有機基である;
b)式(I)の前記少なくとも1種の化合物を有する前記蒸気を、原子層堆積プロセスに従って基板と反応させて、前記基板の少なくとも1つの表面上にタンタル含有錯体の層を形成する工程と
を有する方法。 - c)工程b)で得られた前記形成された錯体の、別種金属のソース、還元性反応物質および/または窒化性反応物質および/または酸化性反応物質より選択される反応物質との反応の工程
をさらに有する請求項1に記載の方法。 - R1がH、1ないし4個の炭素原子を有するアルキルからなる群において選択され、好ましくは、R1がメチルまたはエチルまたはイソプロピルまたはtert−ブチルであり;
R2が1ないし3個の炭素原子を有するアルキルであり、より好ましくは、R2が1または2個の炭素原子を有するアルキルであり;および
R3が3または4個の炭素原子を有するアルキルであり、より好ましくは、R3がイソプロピルまたはtert−ブチルである請求項1または2に記載の方法 - 各R1が互いに異なりおよび各R2が互いに異なる請求項1ないし3の何れか1項に記載の方法。
- 工程a)で供給される前記蒸気がタンタルおよびM'を含有する薄膜を製造するために1種以上の金属(M')−有機前駆体をさらに有する請求項1ないし4の何れか1項に記載の方法。
- 式(I)においてm=0である請求項1ないし5の何れか1項に記載の方法。
- 少なくとも1種の反応性ガスを提供することをさらに有し、ここで前記少なくとも1種の反応性ガスは水素、硫化水素、セレン化水素、テルル化水素、一酸化炭素、アンモニア、有機アミン、シラン、ジシラン、高次シラン、シリルアミン、ジボラン、ヒドラジン、メチルヒドラジン、クロロシランおよびクロロポリシラン、金属アルキル、アルシン、ホスフィン、トリアルキルボロン、酸素、オゾン、水、過酸化水素、一酸化二窒素、一酸化窒素、二酸化窒素、アルコール、これらの化学種のフラグメントを有するプラズマ、ならびにこれらの組み合わせからなる群より選択され、好ましくはオゾンまたは水である請求項1ないし6の何れか1項に記載の方法。
- 式(I)のタンタル前駆体が:
(Cp)Ta(=NtBu)(NEt2)2;
(Cp)Ta(=NtBu)(NMe2)2;
(Cp)Ta(=NC5H11)(NMe2)2;
(Cp)Ta(=NtBu)(N(EtMe)2)2;
(Cp)Ta(=NiPr)(NEt2)2;
(Cp)Ta(=NiPr)(NMe2)2;
(MeCp)Ta(=NtBu)(NMe2)2;
(MeCp)Ta(=NiPr)(NMe2)2
からなる群より選択される請求項1ないし7の何れか1項に記載の方法。 - 前記基板の温度が25℃ないし450℃、好ましくは380℃ないし425℃である請求項1ないし8の何れか1項に記載の方法。
- 前記基板を収容する原子層堆積チャンバが0.133Paないし133kPaの、好ましくは27kPa未満の圧力を有する請求項9に記載の方法。
- 式(I)の前記少なくとも1種の化合物を有する過剰な蒸気を、水素、窒素、ヘリウム、アルゴン、およびこれらの混合物からなる群より選択される不活性ガスで基板からパージする工程をさらに有する請求項1ないし9の何れか1項に記載の方法。
- 半導体構造の製造方法であって、請求項1ないし10の何れか1項において定義される前記複数の工程を有し、前記基板が半導体基板である製造方法。
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