JP2011530002A5 - - Google Patents

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JP2011530002A5
JP2011530002A5 JP2011520419A JP2011520419A JP2011530002A5 JP 2011530002 A5 JP2011530002 A5 JP 2011530002A5 JP 2011520419 A JP2011520419 A JP 2011520419A JP 2011520419 A JP2011520419 A JP 2011520419A JP 2011530002 A5 JP2011530002 A5 JP 2011530002A5
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Japan
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ammonia
ntbu
ald
net
shows
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JP2011520419A
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JP5639055B2 (ja
JP2011530002A (ja
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Priority claimed from PCT/EP2009/059067 external-priority patent/WO2010012595A1/en
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ＡＬＤによって、３９０℃−４５０℃の温度範囲で、（Ｃｐ）Ｔａ（＝ＮｔＢｕ）（ＮＥｔ 2 ） 2 およびアンモニアから堆積された薄膜の成長速度に関して得られた結果を示す。
JP2011520419A 2008-08-01 2009-07-15 タンタル含有層を基板上に形成する方法 Active JP5639055B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08305444 2008-08-01
EP08305444.5 2008-08-01
PCT/EP2009/059067 WO2010012595A1 (en) 2008-08-01 2009-07-15 Method of forming a tantalum-containing layer on a substrate

Publications (3)

Publication Number Publication Date
JP2011530002A JP2011530002A (ja) 2011-12-15
JP2011530002A5 true JP2011530002A5 (ja) 2012-08-23
JP5639055B2 JP5639055B2 (ja) 2014-12-10

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JP2011520419A Active JP5639055B2 (ja) 2008-08-01 2009-07-15 タンタル含有層を基板上に形成する方法

Country Status (6)

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US (1) US9085823B2 (ja)
EP (1) EP2310551B1 (ja)
JP (1) JP5639055B2 (ja)
KR (1) KR101589777B1 (ja)
CN (1) CN102112654B (ja)
WO (1) WO2010012595A1 (ja)

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TWI551708B (zh) * 2011-07-22 2016-10-01 應用材料股份有限公司 使用金屬前驅物之原子層沉積法
KR102627456B1 (ko) 2015-12-21 2024-01-19 삼성전자주식회사 탄탈럼 화합물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
WO2018048124A1 (ko) * 2016-09-08 2018-03-15 주식회사 유피케미칼 5족 금속 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법
CN111534808A (zh) * 2020-05-19 2020-08-14 合肥安德科铭半导体科技有限公司 一种含Ta薄膜的原子层沉积方法及其产物
KR102530814B1 (ko) * 2020-06-30 2023-05-10 주식회사 이지티엠 박막 증착을 위한 5족 금속 화합물 및 이를 이용한 5족 금속 함유 박막의 형성 방법
CN117904593B (zh) * 2024-03-15 2024-05-17 上海谱俊科技有限公司 金属工件、金属表面复合涂层及其制备方法

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