CN102109756B - 基板的再生方法、掩模坯体的制造方法、带多层反射膜的基板和反射型掩模坯体的制造方法 - Google Patents
基板的再生方法、掩模坯体的制造方法、带多层反射膜的基板和反射型掩模坯体的制造方法 Download PDFInfo
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- CN102109756B CN102109756B CN201010547438.3A CN201010547438A CN102109756B CN 102109756 B CN102109756 B CN 102109756B CN 201010547438 A CN201010547438 A CN 201010547438A CN 102109756 B CN102109756 B CN 102109756B
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- 239000000758 substrate Substances 0.000 title claims abstract description 391
- 238000000034 method Methods 0.000 title claims abstract description 181
- 230000008569 process Effects 0.000 title claims description 107
- 238000009418 renovation Methods 0.000 title claims description 88
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000000463 material Substances 0.000 claims abstract description 177
- 150000001875 compounds Chemical class 0.000 claims abstract description 100
- 239000011521 glass Substances 0.000 claims abstract description 52
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 41
- 239000011737 fluorine Substances 0.000 claims abstract description 41
- 238000010023 transfer printing Methods 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 229910052715 tantalum Inorganic materials 0.000 claims description 33
- 239000006096 absorbing agent Substances 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 24
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 21
- 238000001312 dry etching Methods 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 15
- 239000004615 ingredient Substances 0.000 claims description 14
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- 230000007261 regionalization Effects 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 abstract description 30
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052801 chlorine Inorganic materials 0.000 abstract description 18
- 229910052724 xenon Inorganic materials 0.000 abstract description 15
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract description 15
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract description 12
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052794 bromium Inorganic materials 0.000 abstract description 12
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052740 iodine Inorganic materials 0.000 abstract description 8
- 239000011630 iodine Substances 0.000 abstract description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 365
- 239000007789 gas Substances 0.000 description 96
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 36
- 238000011069 regeneration method Methods 0.000 description 36
- 230000008929 regeneration Effects 0.000 description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- 230000010363 phase shift Effects 0.000 description 28
- 239000011651 chromium Substances 0.000 description 21
- 229910052757 nitrogen Inorganic materials 0.000 description 20
- 229910052786 argon Inorganic materials 0.000 description 19
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 18
- 229910052804 chromium Inorganic materials 0.000 description 18
- 238000000227 grinding Methods 0.000 description 18
- 229910052723 transition metal Inorganic materials 0.000 description 13
- 150000003624 transition metals Chemical class 0.000 description 13
- 230000005281 excited state Effects 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 238000003475 lamination Methods 0.000 description 9
- 238000002310 reflectometry Methods 0.000 description 9
- 206010018612 Gonorrhoea Diseases 0.000 description 8
- 229910004162 TaHf Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 230000008676 import Effects 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229910052735 hafnium Inorganic materials 0.000 description 6
- 235000016768 molybdenum Nutrition 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 229910052726 zirconium Inorganic materials 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000005477 sputtering target Methods 0.000 description 5
- 229910004535 TaBN Inorganic materials 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- OCVXZQOKBHXGRU-UHFFFAOYSA-N iodine(1+) Chemical compound [I+] OCVXZQOKBHXGRU-UHFFFAOYSA-N 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000005355 lead glass Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- -1 molybdenum silicide compound Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910021350 transition metal silicide Inorganic materials 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical compound Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009263011 | 2009-11-18 | ||
| JP2009-263011 | 2009-11-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102109756A CN102109756A (zh) | 2011-06-29 |
| CN102109756B true CN102109756B (zh) | 2016-01-20 |
Family
ID=44173951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010547438.3A Expired - Fee Related CN102109756B (zh) | 2009-11-18 | 2010-11-15 | 基板的再生方法、掩模坯体的制造方法、带多层反射膜的基板和反射型掩模坯体的制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5677812B2 (ko) |
| KR (1) | KR101757924B1 (ko) |
| CN (1) | CN102109756B (ko) |
| TW (1) | TWI494682B (ko) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5627990B2 (ja) * | 2010-10-25 | 2014-11-19 | Hoya株式会社 | インプリント用モールドの製造方法 |
| JP5924901B2 (ja) * | 2011-10-17 | 2016-05-25 | Hoya株式会社 | 転写用マスクの製造方法 |
| JP6460617B2 (ja) * | 2012-02-10 | 2019-01-30 | Hoya株式会社 | 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法 |
| JP6301127B2 (ja) * | 2013-12-25 | 2018-03-28 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| CN104932194A (zh) * | 2015-07-22 | 2015-09-23 | 京东方科技集团股份有限公司 | 一种掩膜板及其制备方法、掩膜板的回收方法 |
| JP6716316B2 (ja) * | 2016-03-30 | 2020-07-01 | Hoya株式会社 | 多層膜付き基板の再生方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法 |
| CN113458609A (zh) * | 2021-05-27 | 2021-10-01 | 上海传芯半导体有限公司 | 再生掩模透光基板的处理方法及掩模基版的制造方法 |
| WO2022255186A1 (ja) * | 2021-06-04 | 2022-12-08 | Ａｇｃ株式会社 | 薬液、膜付き基板の再生方法、膜付き基板の製造方法、および反射型マスクブランクの製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101010631A (zh) * | 2004-09-10 | 2007-08-01 | 信越化学工业株式会社 | 光掩模坯件、光掩膜及其制造方法 |
| CN101246312A (zh) * | 2006-12-15 | 2008-08-20 | 信越化学工业株式会社 | 大尺寸光掩模基板的重复利用 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04280987A (ja) * | 1991-03-06 | 1992-10-06 | Central Glass Co Ltd | クリーニング装置 |
| JP2001091731A (ja) * | 1999-09-27 | 2001-04-06 | Ueyama Denki:Kk | 樹脂遮光層を有するカラーフィルターガラス基板の再生方法 |
| JP2002004052A (ja) * | 2000-06-14 | 2002-01-09 | Canon Inc | 成膜装置のクリーニング方法及び堆積膜成膜方法 |
| JP4158885B2 (ja) * | 2002-04-22 | 2008-10-01 | Ｈｏｙａ株式会社 | フォトマスクブランクの製造方法 |
| WO2004061943A1 (en) * | 2003-01-07 | 2004-07-22 | S.O.I.Tec Silicon On Insulator Technologies | Recycling by mechanical means of a wafer comprising a taking-off structure after taking-off a thin layer thereof |
| JP2004335514A (ja) | 2003-04-30 | 2004-11-25 | Nikon Corp | 多層膜反射マスク、その再生方法及び露光装置 |
| JP2005191352A (ja) * | 2003-12-26 | 2005-07-14 | Hoya Corp | 多層反射膜付き基板の再生方法、多層反射膜付き基板の製造方法及び反射型マスクブランクスの製造方法 |
| JP4405443B2 (ja) | 2004-10-22 | 2010-01-27 | 信越化学工業株式会社 | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
| TW200812715A (en) * | 2006-09-01 | 2008-03-16 | Kun-Huang Wu | Method of surface treatment of recycled substrate and transparent substrate made by the same |
| JP4281773B2 (ja) * | 2006-09-25 | 2009-06-17 | ヤマハ株式会社 | 微細成形モールド及び微細成形モールドの再生方法 |
| CN101809499B (zh) * | 2007-09-27 | 2012-10-10 | Hoya株式会社 | 掩模坯体以及压印用模具的制造方法 |
-
2010
- 2010-11-11 TW TW099138859A patent/TWI494682B/zh active
- 2010-11-15 CN CN201010547438.3A patent/CN102109756B/zh not_active Expired - Fee Related
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101010631A (zh) * | 2004-09-10 | 2007-08-01 | 信越化学工业株式会社 | 光掩模坯件、光掩膜及其制造方法 |
| CN101246312A (zh) * | 2006-12-15 | 2008-08-20 | 信越化学工业株式会社 | 大尺寸光掩模基板的重复利用 |
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| Publication number | Publication date |
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| JP2011127221A (ja) | 2011-06-30 |
| KR20110055436A (ko) | 2011-05-25 |
| JP5677812B2 (ja) | 2015-02-25 |
| TW201140230A (en) | 2011-11-16 |
| TWI494682B (zh) | 2015-08-01 |
| CN102109756A (zh) | 2011-06-29 |
| KR101757924B1 (ko) | 2017-07-13 |
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