CN102104108B - 发光二极管封装及其制造方法 - Google Patents

发光二极管封装及其制造方法 Download PDF

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Publication number
CN102104108B
CN102104108B CN201010591413.3A CN201010591413A CN102104108B CN 102104108 B CN102104108 B CN 102104108B CN 201010591413 A CN201010591413 A CN 201010591413A CN 102104108 B CN102104108 B CN 102104108B
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China
Prior art keywords
electrode
lead frame
semiconductor layer
led
led chip
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English (en)
Chinese (zh)
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CN102104108A (zh
Inventor
姜信浩
金泰勋
张丞镐
韩京甫
崔财溶
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LG Display Co Ltd
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LG Display Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
CN201010591413.3A 2009-12-21 2010-12-16 发光二极管封装及其制造方法 Active CN102104108B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090127788A KR101258586B1 (ko) 2009-12-21 2009-12-21 발광다이오드 패키지 및 이의 제조방법
KR10-2009-0127788 2009-12-21

Publications (2)

Publication Number Publication Date
CN102104108A CN102104108A (zh) 2011-06-22
CN102104108B true CN102104108B (zh) 2014-03-12

Family

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Application Number Title Priority Date Filing Date
CN201010591413.3A Active CN102104108B (zh) 2009-12-21 2010-12-16 发光二极管封装及其制造方法

Country Status (4)

Country Link
US (1) US8709844B2 (ko)
KR (1) KR101258586B1 (ko)
CN (1) CN102104108B (ko)
TW (1) TWI435483B (ko)

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US9443903B2 (en) 2006-06-30 2016-09-13 Cree, Inc. Low temperature high strength metal stack for die attachment
US8698184B2 (en) * 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
KR101276053B1 (ko) * 2011-07-22 2013-06-17 삼성전자주식회사 반도체 발광소자 및 발광장치
WO2013121708A1 (ja) * 2012-02-15 2013-08-22 パナソニック株式会社 発光装置およびその製造方法
KR101958419B1 (ko) 2013-01-29 2019-03-14 삼성전자 주식회사 반도체 발광 소자
US10439107B2 (en) 2013-02-05 2019-10-08 Cree, Inc. Chip with integrated phosphor
US9318674B2 (en) * 2013-02-05 2016-04-19 Cree, Inc. Submount-free light emitting diode (LED) components and methods of fabricating same
KR102031967B1 (ko) * 2013-05-07 2019-10-14 엘지이노텍 주식회사 발광 소자 패키지
CN103456729B (zh) * 2013-07-26 2016-09-21 利亚德光电股份有限公司 发光二极管显示屏
KR101521939B1 (ko) 2013-12-17 2015-05-20 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
CN104752578A (zh) * 2013-12-25 2015-07-01 宝钢金属有限公司 一种用于ac-led芯片结构倒装焊金属层结构
CN104752594B (zh) * 2013-12-25 2017-11-10 宝钢金属有限公司 一种用于ac‑led芯片结构倒装焊金属层的制作方法
CN103872212B (zh) * 2014-01-26 2017-01-25 上海瑞丰光电子有限公司 一种led封装方法
KR20160025782A (ko) * 2014-08-28 2016-03-09 엘지이노텍 주식회사 발광 소자 패키지
KR102014258B1 (ko) * 2014-11-21 2019-08-26 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
TWI583019B (zh) * 2015-02-17 2017-05-11 新世紀光電股份有限公司 Light emitting diode and manufacturing method thereof
TWI662724B (zh) * 2018-06-06 2019-06-11 海華科技股份有限公司 覆晶式發光模組
CN108933188A (zh) * 2018-09-06 2018-12-04 武汉华星光电技术有限公司 发光二极管及使用所述发光二极管的背光模组
TWI690102B (zh) * 2019-01-04 2020-04-01 友達光電股份有限公司 發光裝置及其製造方法
TWI773322B (zh) * 2021-05-14 2022-08-01 友達光電股份有限公司 發光二極體
KR102579242B1 (ko) * 2022-02-22 2023-09-18 한국에너지공과대학교 마이크로 led 표시 장치 및 마이크로 led 표시 장치 제조 방법

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CN1747192A (zh) * 2004-09-09 2006-03-15 丰田合成株式会社 发光装置
TW200939522A (en) * 2008-03-05 2009-09-16 Everlight Electronics Co Ltd Apparatus and method for packaging thin LED

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TW200939522A (en) * 2008-03-05 2009-09-16 Everlight Electronics Co Ltd Apparatus and method for packaging thin LED

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陈明祥等.基于共晶的MEMS芯片键合技术及其应用.《半导体光电》.2004,第25卷(第6期),5.

Also Published As

Publication number Publication date
TW201125175A (en) 2011-07-16
US8709844B2 (en) 2014-04-29
KR20110071270A (ko) 2011-06-29
KR101258586B1 (ko) 2013-05-02
TWI435483B (zh) 2014-04-21
US20110147779A1 (en) 2011-06-23
CN102104108A (zh) 2011-06-22

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