200939522 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體裝置及其封裝方法， 且特別是一種薄型發光二極體裝置及其封裝方法。 【先前技術】 發光二極體（Light Emitting Diode; LED)—般是作為指 示燈、顯示板。但隨著技術發展，已經能作為光源使用， 0 它不但能夠高效率地直接將電能轉化為光能，而且擁有最 長達數萬小時至十萬小時的使用壽命，並能省電，同時擁 有無汞、體積小、可應用在低溫環境、光源具方向性、造 成光害少與色域豐富等優點。 發光一極體現階段最大的應用是手機按鍵的背光源， 各種電子展品的指示燈，而最近應用在廣告看板的大型螢 幕’還有應用在液晶螢幕的背光源也越來越受到矚目，發 光二極艎的應用面日趨廣泛。隨著時代進步，產品呈現越 〇 來越薄型化的設計’故降低發光二極體裝置的厚度成為奋 展重點。 目前發光二極體裝置的尺寸受到晶片尺寸影響，目前 晶片的一般厚度為約90微米至約1〇〇微米，但是採用氮化 物（Nitride)基板的晶片中，真正的發光層只有約1〇微米至 約15微米，其餘皆為基板厚度，基板的厚度限制了發光二 極體裝置的厚度。 因此，基於上述原因，需要一種新的薄型發光二極體 裝置及其封裝方法。 5 200939522 【發明内容】 本發明的一目的就是提供一種薄型發光二極體裝置的 封裝方法。 依照本發明一實施例，一種薄型發光二極體裝置的封 裝方法，包含下列步驟。首& ’提供一支架。接著，提供200939522 IX. Description of the Invention: [Technical Field] The present invention relates to a light emitting diode device and a packaging method thereof, and more particularly to a thin light emitting diode device and a packaging method thereof. [Prior Art] A Light Emitting Diode (LED) is generally used as an indicator lamp or a display panel. However, with the development of technology, it can be used as a light source. 0 It can not only directly convert electric energy into light energy, but also has a service life of up to tens of thousands of hours to 100,000 hours, and can save electricity and have no Mercury, small size, can be applied in low temperature environment, light source has directionality, resulting in less light damage and rich color gamut. The biggest application of the illuminating stage is the backlight of the mobile phone keys, the indicator lights of various electronic exhibits, and the large-scale screens recently applied to the advertising billboards, as well as the backlights applied to the LCD screens, are attracting more and more attention. Extremely versatile applications are becoming more widespread. With the advancement of the times, the products have become more and more thin and thinner in design. Therefore, reducing the thickness of the light-emitting diode device has become an important focus. At present, the size of the light-emitting diode device is affected by the size of the wafer. At present, the general thickness of the wafer is about 90 micrometers to about 1 micrometer, but in a wafer using a nitride substrate, the true light-emitting layer is only about 1 micron. To about 15 microns, the rest is the thickness of the substrate, and the thickness of the substrate limits the thickness of the light-emitting diode device. Therefore, for the above reasons, there is a need for a new thin type light emitting diode device and a packaging method therefor. 5 200939522 SUMMARY OF THE INVENTION An object of the present invention is to provide a method of packaging a thin light emitting diode device. According to an embodiment of the invention, a method of packaging a thin light emitting diode device includes the following steps. The first & ' provides a stand. Next, provide
❹ -發光二極體晶片，其中此發光二極體晶片包含一基板。 接著，使用覆晶方式將此發光二極體晶片與此支架接合。 接著，移除此基板。再來，形成一膠體包覆此發光二極體 晶片。 本發明的另一目的就是提供一種薄型發光二極體裝 置。 依照本發明另一實施例’ 一種薄型發光二極體裝置包 含一支架、一發光二極體晶片以及一膠體。其中此發光二 極體晶片不具有一基板，且此發光二極體晶接合於此支架 上，而此膠體用以包覆此發光二極體晶片。 以下將以一實施例對上述之說明以及接下來的實施方 式做詳細的描述，並對本發明提供更進一步的解釋。 【實施方式】 參照第1圖，係繪示依照本發明一實施例的一種發光 二極體晶片的剖面圖。第1圖中，發光二極體晶片100包 含基板110、N型蟲晶層（N_layer)120、活性層（active 6 200939522 layer)130、P型磊晶層（P-layer)140、正電極150、負電極 160、合金170。其中，N型磊晶層120位於基板110上， 活性層130及負電極160分別位於N型磊晶層120上，且 活性層130與負電極160之間有間隔，亦即活性層130與 負電極160實質上並未連接，P型磊晶層140位於活性層 130上，正電極150位於P型磊晶層140上，且合金170 位於正電極150及負電極160上。另外，活性層130可為 多重量子井（MQW)結構。基板110可為氮化物（Nitride)基 板；或是，基板110可為藍寶石（Sapphire)基板、矽（Si)基 板、氮化鎵（GaN)基板、碳化矽（SiC)基板或其他相似之基 板。值得注意的是，合金170可包含金；或者，合金170 可包含金錫；或者，合金170可為於約攝氏200度至約攝 氏300度時呈現融溶態的金屬材料，在不脫離本發明之精 神和範圍内，任何熟習此技藝者，當視實際應用，彈性選 擇合金170的材料。 接著，參照第2圖，係繪示依照本發明一實施例的發 光二極體晶片100接合在支架200上的結構的剖面圖。於 一實施例，提供支架200,再以覆晶方式將發光二極體晶片 100接合在支架200上；具體而言，使用高溫方式、高壓方 式、或超音波方式使發光二極體晶片100的合金170呈現 融溶態，並將發光二極體晶片100直接接合在支架200上。 接著，參照第3圖，係繪示依照本發明一實施例的基 板110被移除的結構的剖面圖。於一實施例，移除基板 110 ;具體而言，使用雷射300將基板110從N型磊晶層 120上剝離。其中，上述之雷射300可為高能脈衝雷射。 7 200939522 然後，參照第4A圖，係繪示依照本發明一實施例的一 種薄型發光二極體裝置的上視圖。同時，參照第4B圖，係 繪示沿第4A圖A-A線的剖面圖。於一實施例，第4B圖中， 基板110被移除之後，使用膠體400包覆發光二極體晶片 100 ;具體而言，將膠體400以高溫熱壓的方式或點膠方式 將發光二極體晶片100封膠在支架200上加以保護。藉此， 形成發光二極體裝置500,其包含支架200、發光二極體晶 片100、膠體400。其中，發光二極體晶片100不具有基板 110，且發光二極體晶100接合於支架200上，而膠體400 包覆發光二極體晶片100。 另外，參照第5圖，係繪示依照本發明另一實施例的 一種薄型發光二極體裝置的上視圖。於此實施例，使用覆 晶方式將多個發光二極體晶片100與一模組600接合；具 體而言，使用高溫方式、高壓方式、或超音波方式使發光 二極體晶片100的合金170呈現融溶態，並將發光二極體 晶片100直接接合在模組600上。接著，移除基板110 ;具 體而言，使用雷射將多個發光二極體晶片100的基板110 剝離。再來，使用膠體400包覆多個發光二極體晶片100 ; 具體而言，將膠體400以高溫熱壓的方式或點膠方式將多 個發光二極體晶片100封膠在模組600上加以保護。藉此， 形成一發光二極體裝置，其包含一模組600、多個發光二極 體晶片100、膠體400。其中，每一發光二極體晶片1〇〇木 具有基板110，且多個發光二極體晶100接合於模組600 上，而膠艎400包覆多個發光二極體晶片1〇〇。 雖然本發明已以一實施例揭露如上，然其並非用以限 200939522 定本發明’任何熟習此技藝者，在不脫離本發明之精神和 範圍内’當可作各種之更動與潤飾，因此本發明之保護範 圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圖式之詳細說明如下： ❹ 第1圖係繪示依照本發明一實施例的一種發光二極體 晶片的剖面圖。 第2圖係繪示依照本發明一實施例的發光二極體晶片 接合在支架上的結構的剖面圖。 第3囷係繪示依照本發明一實施例的基板被移除的結 構的剖面圖。 第4A圖係繪示依照本發明一實施例的一種薄型發光 〇 二極體裝置的上視圖。 第4B圖係繪示沿第4A圖之A-A線的剖面圖。 第5圖係繪示依照本發明另一實施例的一種薄型發光 二極體裝置的上視圖。 110 :基板 130 :活性層 150 :正電極 【主要元件符號說明】 100 :發光二極體晶片 120 : N型磊晶層 140 : P型磊晶層 200939522 160 : 負電極 170 : 200 : 支架 300 : 400 : 膠體 500 : 合金 雷射 發光二極體裝置A luminescent-light-emitting diode wafer, wherein the light-emitting diode wafer comprises a substrate. Next, the light-emitting diode wafer is bonded to the holder by flip chip. Next, the substrate is removed. Further, a colloid is formed to coat the light emitting diode wafer. Another object of the present invention is to provide a thin type light emitting diode device. According to another embodiment of the present invention, a thin light emitting diode device includes a holder, a light emitting diode chip, and a colloid. The illuminating diode chip does not have a substrate, and the illuminating diode is bonded to the pedestal, and the colloid is used to cover the illuminating diode chip. The above description and the following embodiments will be described in detail with reference to an embodiment, and further explanation of the invention. [Embodiment] Referring to Figure 1, there is shown a cross-sectional view of a light emitting diode wafer in accordance with an embodiment of the present invention. In the first embodiment, the LED wafer 100 includes a substrate 110, an N-type layer (N_layer) 120, an active layer (active 6 200939522 layer) 130, a P-type epitaxial layer (P-layer) 140, and a positive electrode 150. , negative electrode 160, alloy 170. The N-type epitaxial layer 120 is disposed on the substrate 110, and the active layer 130 and the negative electrode 160 are respectively disposed on the N-type epitaxial layer 120, and the active layer 130 and the negative electrode 160 are spaced apart, that is, the active layer 130 and the negative layer are negative. The electrode 160 is not substantially connected, the P-type epitaxial layer 140 is on the active layer 130, the positive electrode 150 is on the P-type epitaxial layer 140, and the alloy 170 is on the positive electrode 150 and the negative electrode 160. Additionally, active layer 130 can be a multiple quantum well (MQW) structure. The substrate 110 can be a nitride substrate; alternatively, the substrate 110 can be a sapphire substrate, a bismuth (Si) substrate, a gallium nitride (GaN) substrate, a tantalum carbide (SiC) substrate, or other similar substrate. It is noted that the alloy 170 may comprise gold; or, the alloy 170 may comprise gold tin; or, the alloy 170 may be a metal material that exhibits a molten state at about 200 degrees Celsius to about 300 degrees Celsius, without departing from the invention. Within the spirit and scope, any person skilled in the art, depending on the actual application, elastically selects the material of the alloy 170. Next, referring to Fig. 2, there is shown a cross-sectional view showing a structure in which a light-emitting diode wafer 100 is bonded to a holder 200 according to an embodiment of the present invention. In one embodiment, the bracket 200 is provided, and the LED wafer 100 is bonded to the bracket 200 in a flip chip manner; specifically, the LED array 100 is made by using a high temperature method, a high voltage method, or an ultrasonic method. The alloy 170 is in a melted state and the light emitting diode wafer 100 is directly bonded to the stent 200. Next, referring to Fig. 3, there is shown a cross-sectional view showing a structure in which a substrate 110 is removed in accordance with an embodiment of the present invention. In one embodiment, the substrate 110 is removed; in particular, the substrate 110 is stripped from the N-type epitaxial layer 120 using a laser 300. Wherein, the above laser 300 can be a high energy pulsed laser. 7 200939522 Next, referring to Fig. 4A, there is shown a top view of a thin type light emitting diode device in accordance with an embodiment of the present invention. Meanwhile, referring to Fig. 4B, a cross-sectional view taken along line A-A of Fig. 4A is shown. In an embodiment, in FIG. 4B, after the substrate 110 is removed, the LED 400 is coated with the colloid 400; specifically, the colloid 400 is heated at a high temperature or by a dispensing method. The body wafer 100 is encapsulated on the holder 200 for protection. Thereby, a light-emitting diode device 500 including the holder 200, the light-emitting diode wafer 100, and the colloid 400 is formed. The light emitting diode chip 100 does not have the substrate 110, and the light emitting diode 100 is bonded to the bracket 200, and the colloid 400 covers the light emitting diode chip 100. Further, referring to Fig. 5, there is shown a top view of a thin type light emitting diode device in accordance with another embodiment of the present invention. In this embodiment, the plurality of light emitting diode chips 100 are bonded to a module 600 by flip chip bonding; specifically, the alloy 170 of the light emitting diode chip 100 is formed by a high temperature method, a high voltage method, or an ultrasonic method. The melted state is presented and the LED wafer 100 is directly bonded to the module 600. Next, the substrate 110 is removed; specifically, the substrate 110 of the plurality of light emitting diode wafers 100 is peeled off using a laser. Then, the plurality of light emitting diode chips 100 are coated with the colloid 400; specifically, the plurality of light emitting diode chips 100 are sealed on the module 600 by high temperature hot pressing or dispensing. Protected. Thereby, a light emitting diode device is formed, which comprises a module 600, a plurality of light emitting diode wafers 100, and a colloid 400. Each of the LED chips 1 has a substrate 110, and a plurality of LEDs 100 are bonded to the module 600, and the capsule 400 covers the plurality of LEDs. Although the present invention has been disclosed in an embodiment of the present invention, it is not intended to limit the invention to the present invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; A cross-sectional view of a light emitting diode chip. Fig. 2 is a cross-sectional view showing the structure in which a light-emitting diode wafer is bonded to a holder in accordance with an embodiment of the present invention. Figure 3 is a cross-sectional view showing a structure in which a substrate is removed in accordance with an embodiment of the present invention. Fig. 4A is a top plan view showing a thin type of light-emitting iridium diode device in accordance with an embodiment of the present invention. Figure 4B is a cross-sectional view taken along line A-A of Figure 4A. Figure 5 is a top plan view of a thin light emitting diode device in accordance with another embodiment of the present invention. 110: substrate 130: active layer 150: positive electrode [main element symbol description] 100: light-emitting diode wafer 120: N-type epitaxial layer 140: P-type epitaxial layer 200939522 160: negative electrode 170: 200: bracket 300: 400 : Colloid 500 : Alloy laser light emitting diode device
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