CN102099895B - 结晶膜的制造方法及结晶膜制造装置 - Google Patents

结晶膜的制造方法及结晶膜制造装置 Download PDF

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Publication number
CN102099895B
CN102099895B CN201080002151.0A CN201080002151A CN102099895B CN 102099895 B CN102099895 B CN 102099895B CN 201080002151 A CN201080002151 A CN 201080002151A CN 102099895 B CN102099895 B CN 102099895B
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China
Prior art keywords
film
pulse laser
crystalline
crystallization
manufacture method
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CN201080002151.0A
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English (en)
Chinese (zh)
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CN102099895A (zh
Inventor
富樫陵太郎
佐藤亮介
清野俊明
井波俊夫
草间秀晃
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JSW acdina System Co.,Ltd.
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Japan Steel Works Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
CN201080002151.0A 2009-03-05 2010-02-25 结晶膜的制造方法及结晶膜制造装置 Active CN102099895B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-052404 2009-03-05
JP2009052404 2009-03-05
PCT/JP2010/052935 WO2010101066A1 (ja) 2009-03-05 2010-02-25 結晶質膜の製造方法および結晶質膜製造装置

Publications (2)

Publication Number Publication Date
CN102099895A CN102099895A (zh) 2011-06-15
CN102099895B true CN102099895B (zh) 2016-10-12

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CN201080002151.0A Active CN102099895B (zh) 2009-03-05 2010-02-25 结晶膜的制造方法及结晶膜制造装置

Country Status (5)

Country Link
JP (1) JP5594741B2 (ja)
KR (1) KR101323614B1 (ja)
CN (1) CN102099895B (ja)
TW (1) TWI467659B (ja)
WO (1) WO2010101066A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012120775A1 (ja) 2011-03-04 2012-09-13 パナソニック株式会社 結晶性評価方法、結晶性評価装置、及びそのコンピュータソフト
CN109920809A (zh) * 2019-03-14 2019-06-21 上海交通大学 一种x射线平板探测器及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1173948A (zh) * 1995-12-14 1998-02-18 精工爱普生株式会社 薄膜半导体器件、薄膜半导体器件的制造方法、液晶显示装置、液晶显示装置的制造方法、电子设备,电子设备的制造方法和薄膜淀积方法
JP2008147487A (ja) * 2006-12-12 2008-06-26 Japan Steel Works Ltd:The 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置
CN101350331A (zh) * 2007-07-20 2009-01-21 株式会社半导体能源研究所 显示装置的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326654B2 (ja) * 1994-05-02 2002-09-24 ソニー株式会社 表示用半導体チップの製造方法
TW305063B (ja) 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
JPH10209069A (ja) * 1997-01-17 1998-08-07 Sumitomo Heavy Ind Ltd レーザアニール方法及びレーザアニール装置
JP2000208416A (ja) * 1999-01-14 2000-07-28 Sony Corp 半導体薄膜結晶化方法及びレ―ザ照射装置
JP2004342785A (ja) * 2003-05-15 2004-12-02 Sony Corp 半導体製造方法および半導体製造装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1173948A (zh) * 1995-12-14 1998-02-18 精工爱普生株式会社 薄膜半导体器件、薄膜半导体器件的制造方法、液晶显示装置、液晶显示装置的制造方法、电子设备,电子设备的制造方法和薄膜淀积方法
JP2008147487A (ja) * 2006-12-12 2008-06-26 Japan Steel Works Ltd:The 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置
CN101350331A (zh) * 2007-07-20 2009-01-21 株式会社半导体能源研究所 显示装置的制造方法

Also Published As

Publication number Publication date
TW201034082A (en) 2010-09-16
JP5594741B2 (ja) 2014-09-24
JPWO2010101066A1 (ja) 2012-09-10
CN102099895A (zh) 2011-06-15
TWI467659B (zh) 2015-01-01
WO2010101066A1 (ja) 2010-09-10
KR20110122787A (ko) 2011-11-11
KR101323614B1 (ko) 2013-11-01

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Effective date of registration: 20220406

Address after: Kanagawa

Patentee after: JSW acdina System Co.,Ltd.

Address before: Tokyo

Patentee before: THE JAPAN STEEL WORKS, Ltd.