CN102099895B - The manufacture method of crystalline film and crystallization film manufacturing device - Google Patents
The manufacture method of crystalline film and crystallization film manufacturing device Download PDFInfo
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- CN102099895B CN102099895B CN201080002151.0A CN201080002151A CN102099895B CN 102099895 B CN102099895 B CN 102099895B CN 201080002151 A CN201080002151 A CN 201080002151A CN 102099895 B CN102099895 B CN 102099895B
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- 230000008025 crystallization Effects 0.000 title claims abstract description 56
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 25
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- 239000013078 crystal Substances 0.000 abstract description 25
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- 239000011521 glass Substances 0.000 description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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Abstract
The present invention provides manufacture method and the crystallization film manufacturing device of a kind of crystalline film, with the irradiation number of times of 1～10 time, to amorphous film irradiate that formed by the wavelength of 340～358nm, have 130～240mJ/cm2The pulse laser of energy density, it is heated to described amorphous film making its crystallization less than the temperature of crystalline melt point, as preferably, the pulsewidth of pulse laser is set to 5～100ns, frequency is set to 6～10kHz, short axis width is set to below 1.0mm, makes this pulse laser relatively be scanned with the scanning speed of 50～1000mm/ seconds, it is thus possible to made less, the uniform and trickle crystalline film of deviation of crystal grain diameter by amorphous film efficiently and substrate is not caused damage.
Description
Technical field
The present invention relates to make the trickle crystallization of this amorphous film to make the crystalline film of crystalline film to amorphous film irradiated with pulse laser
Manufacture method and manufacture device.
Background technology
In order to manufacture the crystallization of the thin film transistor (TFT) (TFT) for thin display flat faced displays such as liquid crystal indicators
Silicon, generally uses the following two kinds method: a kind of method is laser annealing method, to the amorphous silicon film radiation pulses being located at substrate upper strata
Laser so that it is melted, crystallization again；Another kind of method is solid state growth method (SPC, Solid Phase Crystallization),
The described substrate to upper strata with heating furnace with amorphous silicon film heats, and does not make described silicon fiml melt, makes in the solid state
Crystalline growth.
It addition, the present inventor confirms when substrate temperature is maintained at heated condition, swashed by radiation pulses
Light, can obtain the polycrystalline film trickleer than solid state growth, and propose patent application (with reference to patent documentation 1).
Patent documentation 1: Japanese Patent Laid-Open 2008-147487 publication
Summary of the invention
In the last few years, large-scale tv OLED (Organic Light Emitting Diode (Organic light-emitting was being manufactured
Diode)) when panel or LCD (liquid crystal display (Liquid Crystal Display)) panel, it is desirable to have be manufactured inexpensively all
The method of trickle polysilicon film even, large-area.
It addition, recently, in replacing the liquid crystal display organic el display as most promising display of future generation,
Carry out luminescence by organic EL self and improve the brightness of screen.Owing to the luminescent material of organic EL is not to carry out as LCD
Voltage drives, and is by electric current and drives, and therefore the requirement to TFT is different.In the TFT that non-crystalline silicon is constituted, it is difficult to suppression
Aging, threshold voltage (Vth) can produce and significantly drift about, and limits the life-span of device.On the other hand, polysilicon is owing to being stable
Material, therefore lasts a long time.But in the TFT that polysilicon is constituted, the characteristic deviation of TFT is bigger.The deviation of this TFT characteristic
It is owing to the interface (crystal boundary) of the deviation of crystal grain diameter and the crystal grain of silicon metal is present in the channel formation region of TFT, therefore
It is more prone to.The characteristic deviation of TFT is the most easily affected by the quantity of the crystal grain diameter being present between raceway groove and crystal boundary.And
And, if crystal grain diameter is relatively big, the most generally speaking electron mobility becomes big.Although the TFT electric field electron of organic el display purposes
Mobility is higher, but the raceway groove that must extend TFT is long, and the size of each 1 pixel of RGB (RGB) depends on that the raceway groove of TFT is long,
High-resolution cannot be obtained.Therefore, the requirement degree for the less and trickle crystalline film of the deviation of crystal grain diameter is more and more higher.
But, in existing crystallization method, it is difficult to solve these problems.
This is because, the laser annealing method of one of them is to make non-crystalline silicon temporarily melted and crystallization again process, general institute
The crystal grain diameter formed is relatively big, and the deviation of crystal grain diameter is the biggest.Therefore, as indicated previously as, electric field electron mobility
Higher, the quantity of the crystal grain diameter in the channel region of multiple TFT produces deviation, and random shape, adjacent crystallization
The difference of crystalline orientation, result can significantly affect the characteristic deviation of TFT.It is prone to appearance especially poor in laser superposition portion crystallinity
Different, this crystalline difference can significantly affect the characteristic deviation of TFT.It addition, there is also pollutant (impurity) meeting due to surface
Crystallization is made to produce the such problem of defect.
It addition, the particle diameter of the crystallization obtained by solid state growth method (SPC method) is less, TFT deviation is less, it is that solution is above-mentioned
The maximally effective crystallization method of problem.But, its crystallization time is longer, it is difficult to be used as mass production applications.Can carry out
In the heat treatment step of solid state growth method (SPC), use the annealing device of the batch-type simultaneously processing polylith substrate.Due to same
Time substantial amounts of substrate is heated, therefore heat up and the temperature in needing long period, and substrate of lowering the temperature be the most uneven.
If it addition, solid state growth method carries out long-time heating with the temperature higher than the DEFORMATION POINTS temperature of glass substrate, then glass can be caused
The contraction of substrate self, expansion, cause damage to glass.Owing to the crystallization temperature of SPC is higher than vitrification point, the least temperature
Degree distribution can make glass substrate produce bending or shrink distribution.Even if as a result of which it is, crystallization can be carried out, waiting at exposure process
Journey also can come into question and be difficult to manufacture device.Treatment temperature is the highest more needs temperature homogeneity.It is said that in general, crystallization rate
Depend on heating-up temperature, at 600 DEG C, need 10 to 15 hours, at 650 DEG C, need 2 to 3 hours, need several at 700 DEG C
The process time of ten minutes.In order to carry out processing, glass substrate not caused damage, need to process for a long time the time, the party
Method is difficult to be used as mass production applications.
The present invention completes with above-mentioned situation as background, its object is to provide the manufacture method of a kind of crystalline film,
The less trickle crystalline film of deviation of crystal grain diameter can be made by amorphous film efficiently and substrate not caused damage.
That is, in the manufacture method of the crystalline film of the present invention, a first aspect of the present invention is characterised by, with 1～10 time
Irradiate number of times to be present in substrate upper strata amorphous film irradiate formed by the wavelength of 340～358nm, have 130～
240mJ/cm2The pulse laser of energy density, be heated to described amorphous film making it brilliant less than the temperature of crystalline melt point
Change.
The crystallization film manufacturing device of the present invention includes: pulsed laser light source, this pulsed laser light source output wavelength be 340～
The pulse laser of 358nm；Optical system, described pulse laser is guided amorphous film to be irradiated it by this optical system；Decline
Subtracting device, the attenuation rate of this attenuator described pulse laser to exporting from described pulsed laser light source is adjusted, and makes described sharp
Light is with 130～240mJ/cm2Energy density be irradiated on amorphous film；And scanning means, this scanning means makes described laser
For described amorphous film relative movement, described pulse laser is made to carry out in irradiating the scope of 1～10 time on described amorphous film
Overlapping irradiation.
According to the present invention, by the energy density with appropriateness with appropriate irradiation number of times to amorphous film irradiation ultraviolet radiation wavelength
The pulse laser in region is to heat rapidly, and amorphous film is heated to the temperature less than crystalline melt point, can be with being different from
Existing method melted, crystallization method again, it is thus achieved that uniform grain that the deviation of particle diameter is less, such as size be 50nm with
Under, do not have bossed grain.In existing melted crystallization method, crystal grain diameter is relatively big more than 50nm, it addition, at this
Melted crystallization method or utilize the SPC (solid state growth method) of heating furnace, the deviation of crystal grain is bigger, it is impossible to obtain grain.
It addition, according to the present invention, owing to being only heated to the temperature of the fusing point less than crystallization, therefore the film of crystallization self is not
The further phase transformation of meeting, such as, owing to only making non-crystalline silicon become crystalline silicon, therefore the position of superimposed pulse laser also can obtain identical
Crystallinity, it is thus possible to improve uniformity.Additionally, by the irradiation of the pulse laser according to condition of the present invention, can be by amorphous
Film is heated above the temperature of existing solid state growth method.
It addition, by using pulse laser rather than continuous oscillation, it is not easy to reach the temperature making the substrate of substrate be damaged
Degree.It addition, in the present invention, it is not necessary to substrate is heated, but as the present invention, however not excluded that substrate is heated.So
And, as the present invention, preferably carry out the irradiation of described pulse laser and substrate is not heated.
If additionally, the amorphous film hydrogen content being arranged on substrate is more, then with high-energy as melted crystallization method
When being irradiated, may cause occurring the situation of dehydrogenation because the molecular link of Si-H is easily cut-off and is susceptible to ablation,
But in the present invention, change with keeping solid phase due to silicon, it is not easy to ablation occurs, therefore the amorphous film of non-dehydrogenation can be carried out
Process.
Then, the condition of regulation in the present invention is illustrated.
Wavelength region: 340～358nm
Owing to described wavelength region is relative to amorphous film, the particularly amorphous silicon film preferable wavelength region of absorption, therefore,
Directly amorphous film can be heated with the pulse laser of this wavelength region.Therefore, there is no need to indirectly set laser absorption layer
It is placed in the upper strata of amorphous film.Further, since laser is absorbed fully by amorphous film, laser therefore it is possible to prevent to cause substrate to be added
Heat, can suppress bending and the deformation of substrate, such that it is able to avoid substrate to be damaged.
Additionally, although the wavelength of laser can be absorbed relative to amorphous film, particularly amorphous silicon film, if but having transmission, then
Due to the multipath reflection from lower floor side, it is heavily dependent on relative to the absorbance of the light of the irradiation part of amorphous film
The deviation of the thickness of amorphous film lower floor.If described wavelength region, then can be completely by amorphous film, particularly silicon fiml due to laser
Absorb, thus, it is possible to obtain polycrystalline film and without too much considering the thickness deviation of lower floor.Further, since almost can ignore non-
The transmission of epitaxial, therefore can be applicable to be formed with the situation of amorphous film on metal.
That is, if the wavelength region utilizing the laser of crystallization being set to viewing area, then it is the silicon of about 500nm due to thickness
Although light can be partially absorbed, but there is also the light of a part of transmission, therefore, if from silicon lower floor (SiO2, the cushion such as SiN layer)
Multipath reflection produce impact, the cushion of Shi Gui lower floor in uneven thickness, then the absorptivity of silicon can be caused also to become
Change.Even if by SiO2The mode on the upper strata being arranged at silicon etc. cap layer there is also identical problem.
If it addition, the wavelength region of pulse laser is set to infrared spectral range, then owing to being the silicon of about 50nm at thickness
In hardly pick up light, therefore, the typically upper layer part at silicon arranges light absorbing zone.But, if use the manner, then can from but
So cause increasing the operation of coating light absorbing zone and after pulsed laser irradiation, removing the operation of light absorbing zone.
From the point of view of above-mentioned each viewpoint, in the present application, the wavelength region of pulse laser is set to ultraviolet range
340～358nm.
Energy density: 130～240mJ/cm2
By the pulse laser to amorphous film irradiation energy density (on amorphous film) appropriateness, amorphous film keeps solid phase or quilt
It is heated to exceeding amorphous fusing point and being crystallized, such that it is able to make crystallite less than the temperature of crystalline melt point.If energy
Density is relatively low, then cannot fully improve the temperature of amorphous film, it is impossible to fully crystallization, and crystallization will become difficulty.On the other hand, if energy
Metric density is higher, then can produce fusion-crystallization, thus ablation occurs.Therefore, the energy density of pulse laser is limited to 130～
240mJ/cm2。
Irradiation number of times: 1～10 time
When to amorphous film irradiated with pulse laser, by suitably setting the irradiation number of times being irradiated in the same area, even if
In the beam area irradiated, there is energy deviation, also can utilize and repeatedly irradiate the equalizing temperature making crystallization, be finally made all
Even crystallite.
If it is more to irradiate number of times, then amorphous film may be heated to exceeding the temperature of crystalline melt point, thus occur melted
Or ablation.It addition, along with irradiating increasing of number of times, the time of process can be elongated, and efficiency is poor.
Degree of crystallinity: 60～95%
Above-mentioned wavelength, energy density and irradiate number of times condition in, degree of crystallinity during crystallization be preferably set to 60～
95%.If degree of crystallinity is less than 60%, then when using as thin film transistor (TFT) etc., it is more difficult to obtain enough characteristics.If executing
The energy being added on amorphous film is less, then degree of crystallinity cannot be made to reach more than 60%.If it addition, degree of crystallinity is more than 95%, then crystallizing
Meeting gradually coarsening, thus it is difficult to obtain the crystallization of fine and even.If exceeding crystalline melt point ground irradiated with pulse laser, then degree of crystallinity
Easily become more than 95%.
Additionally, specifically, degree of crystallinity can be according to the area of the peak crystallization utilizing Raman spectrum to be obtained and noncrystalline
The ratio (area of crystallization Si crest/(area of the area of noncrystalline Si crest+crystallization Si crest)) of the area at peak determines.
Additionally, the pulsewidth of pulse laser (half width) is preferably set to 5～100ns.If pulsewidth is less, then peak power
Density increases, and may be heated beyond the temperature of fusing point, thus melted or ablation occurs.If it addition, pulsewidth is relatively big, then
Maximum power density reduces, and may be heated to making the temperature of its solid phase crystallization.
Additionally, the pulse frequency of pulse laser is preferably 6～10kHz.
By improving the pulse frequency (more than 6kHz) of pulse laser to a certain extent, due to the time interval between irradiating
Diminish, heat produced by pulsed laser irradiation kept by amorphous film, therefore can effectively crystallization be played a role.The opposing party
Face, if pulse frequency becomes too high, then is susceptible to melt, ablation.
It addition, the short axis width of described pulse laser is preferably set to below 1.0mm.
By relatively making pulse laser be scanned along short axis width direction, can partly irradiate, heat amorphous film,
Crystallizing treatment can be carried out again on a large scale.But, if short axis width is too big, then it is necessary for increasing scanning speed for crystallization efficiently
Degree, installation cost can improve.
By making described pulse laser that amorphous film to be relatively scanned, described amorphous film can be made brilliant along surface direction
Change.This scanning can make pulse laser side shifting, can make amorphous film side shifting, it is possible to so that both move.Described scanning is
Carry out with the speed of 50～1000mm/ seconds well.
If this scanning speed is less, then maximum power density increases, and may be heated to exceeding crystalline melt point by amorphous film
Temperature, thus there is melted or ablation.It addition, if scanning speed is relatively big, then maximum power density reduces, may
It is heated to making the temperature of its solid phase crystallization.
Additionally, the Solid State Laser light source that the manufacture device of the present invention can use the pulse laser of output ultraviolet range comes
Export the pulse laser of desired wavelength region, such that it is able to utilize the LASER Light Source that maintainability is good to carry out the system of crystallite
Make.In order to obtain uniform crystallite, it is possible to use energy density is suitably adjusted by energy adjusting portion, then shine to amorphous film
Penetrate pulse laser.Energy adjusting portion can be made to be adjusted the output of Solid State Laser light source obtaining the energy density of regulation,
The attenuation rate of the pulse laser exported from Solid State Laser light source can also be adjusted, to adjust energy density.By profit
Make this pulse laser that amorphous film to be relatively scanned with scanning means, can amorphous film on a large scale in suitable knot
Crystalline substance degree obtains trickle and crystallizes uniformly.Utilize this scanning to the frequency of pulse, the short axis width of pulse laser and scanning speed
Degree is set, and making the number of times being irradiated the same area of amorphous film is 1～10.
Scanning means can also make the optical system guiding pulse laser move so that pulse laser moves, or
Person, it is possible to so that the pedestal being configured with amorphous film moves.
As described above, according to the present invention, with the irradiation number of times of 1～10 time, irradiate to the amorphous film being positioned at substrate upper strata
That formed by the wavelength of 340～358nm, have 130～240mJ/cm2The pulse laser of energy density, by described amorphous
Film is heated to making its crystallization less than the temperature of crystalline melt point, therefore, it can make average crystallite granularity little to making TFT's
Crystalline film that there is multiple crystal grain in channel region, that there is uniformity excellent especially, such that it is able to the problem described in Xie Jueing.
Recently, owing to wiring width is diminishing, and the size (channel length, channel width) of the channel formation region of TFT is also becoming
Little, accordingly, it would be desirable to a kind of method that can make the less stable crystalline film of mean diameter equably at whole substrate regions.
Need the crystallization technology that the difference of a kind of TFT characteristic making adjacent area is minimum especially, utilize the present invention to be reliably achieved described
Requirement.The impurity being attached to film surface can also be removed simultaneously.
It addition, according to the present invention it is possible to reduce cost and the maintenance cost of device, the place that the utilization of capacity is higher can be carried out
Reason, thus can improve productivity.
It addition, according to the present invention, either still surpass less than the branchpoint of substrate (glass substrate etc.) owing to have employed
Crossed branchpoint, the technique that can carry out at low temperatures processing, therefore, it can only make amorphous film be heated to high temperature with laser and
Make its crystallization.Have can be in the such effect of crystallite of short time generation below 50nm simultaneously.Have in superposition portion also simultaneously
The such effect of crystallite (effective to large-area crystallization) of identical below 50nm can be generated.
Have the deformation of substrate (bend, deform, internal stress) suppression in MIN effect simultaneously.Have simultaneously
By substrate slightly being heated the effect of the pollutant removing the impurity being present in amorphous film and be attached to surface.
Accompanying drawing explanation
Fig. 1 is the ultraviolet Solid State Laser annealing dress manufacturing device being denoted as an embodiment of the invention
The longitudinal sectional view put.
Fig. 2 is the SEM photograph representing in the same manner and changing manufacturing condition and thin film after irradiated with pulse laser in an embodiment.
Fig. 3 is the SEM representing in the same manner and changing manufacturing condition and thin film after irradiated with pulse laser in other embodiments
Photo.
Fig. 4 is the SEM representing in the same manner and changing manufacturing condition and thin film after irradiated with pulse laser in other embodiments
Photo.
Fig. 5 is the figure representing Raman spectrum measurement result in the same manner.
Detailed description of the invention
Below, based on Fig. 1, an embodiment of the invention is illustrated.
In the manufacture method of the crystalline film of present embodiment, if the substrate 8 for flat faced display TFT device is right
As, this substrate 8 is formed with amorphous silicon membrane 8a as amorphous film.Amorphous silicon membrane 8a is formed at substrate by usual way
The upper strata of 8, omits Dehydroepiandrosterone derivative.
But, as the present invention, the classification of the substrate and amorphous film formed thereon that become object is not limited to this.
Fig. 1 is that the ultraviolet Solid State Laser of the manufacture method representing the crystalline film for an embodiment of the invention moves back
The figure of fire processing means 1, this ultraviolet Solid State Laser annealing device 1 is equivalent to the crystallization film manufacturing device of the present invention.
Ultraviolet Solid State Laser annealing device 1 in, output have 340～358nm wavelength, pulse frequency be 6
～the ultraviolet solid laser oscillator 2 of the pulse laser that 10kHz, pulsewidth are 5～100ns is arranged at except shaking on platform 6, at this purple
In outside line solid laser oscillator 2, including control circuit 2a generating pulse signal.
Outlet side at ultraviolet solid laser oscillator 2 is configured with attenuator 3, and optical fiber 5 is via bonder 4 and attenuator
The outlet side of 3 is connected.The transmission destination of optical fiber 5 with include condenser lens 70a, 70b and be configured at this condenser lens
The optical system 7 of beam homogenizer 71a, 71b etc. between 70a, 70b is connected.In the injection direction of optical system 7, arrange
There is the substrate mounting table 9 of placing substrate 8.Optical system 7 is set, by pulse laser shaping be short axis width be 1.0mm
Following rectangle or wire harness shape.
Aforesaid substrate mounting table 9 can be mobile along the surface direction (XY direction) of this substrate mounting table 9, including making this base
Plate mounting table 9 is along the scanning means 10 of described surface direction high-speed mobile.
Then, the crystallization method of the amorphous silicon membrane employing above-mentioned ultraviolet Solid State Laser annealing device 1 is entered
Row explanation.
First, on substrate mounting table 9, placing is formed with the substrate 8 of amorphous silicon membrane 8a on upper strata.In present embodiment
In this substrate 8 do not utilize heater etc. to heat.
In control circuit 2a generate pulse signal, preset (6～10kHz) with output pulse frequency, pulsewidth be 5～
The pulse laser of 100ns, according to this pulse signal, utilizing ultraviolet solid laser oscillator 2 output wavelength is 340～358nm
Pulse laser.
Attenuator 3 is arrived, by attenuator 3 thus with rule from the pulse laser of ultraviolet solid laser oscillator 2 output
Fixed attenuation rate decays.This attenuation rate is set to, and pulse laser becomes the energy density that present invention provide that at machined surface.
Attenuator 3 can also make attenuation rate variable.
The pulse laser that have adjusted energy density is transmitted by optical fiber 5 and is directed into optical system 7.In optical system 7, as
Upper described, utilizing condenser lens 70a, 70b, beam homogenizer 71a, 71b etc. is 1.0mm by pulse laser shaping for short axis width
Following rectangle or wire harness shape, by being 130～240mJ/cm on machined surface2Energy density irradiate to substrate 8.
Aforesaid substrate mounting table 9 utilizes scanning means 10, along amorphous silicon membrane 8a face in the short axis width side of described wire harness
To moving, as a result of which it is, in the wide region in this amorphous silicon membrane 8a face, be relatively scanned and irradiate above-mentioned pulse
Laser.Additionally, the scanning speed of pulse laser is set to 50～1000mm/ according to the setting of the translational speed of now scanning means
Second, at the same area of amorphous silicon membrane 8a with the irradiation number of times irradiated with pulse laser of 1～10 time.This irradiation number of times is based on described
The scanning speed of pulse frequency, pulsewidth, the short axis width of pulse laser and pulse laser determines.
The amorphous silicon membrane 8a in the irradiation of above-mentioned pulse laser, only substrate 8 is utilized to be heated, at short notice by many
Crystallization.Now, the heating-up temperature of amorphous silicon membrane 8a become temperature less than crystalline melt point (for example, more than 1000 DEG C～
About 1400 DEG C).Additionally, heating-up temperature can be set to the temperature less than noncrystalline melting temperature, or it is set to exceed amorphous
Matter melting temperature, temperature less than crystalline melt point.
The crystal grain diameter utilizing the crystalline membrane that above-mentioned irradiation obtained is below 50nm, and crystalline membrane is not existing
Viewed projection in solid-phase crystallization growth method, has the crystallinity of uniform and trickle high-quality.For example, it is possible to enumerate especially
Average crystal grain is below 20nm, standard deviation is the example of below 10nm.Crystal grain can be surveyed by atomic force microscope (AFM)
Fixed.Furthermore it is possible to based on utilizing the area of peak crystallization obtained by Raman spectrum to calculate with the ratio meter of the area at noncrystalline peak
Degree of crystallinity, this degree of crystallinity is preferably 60～95%.
Above-mentioned crystalline membrane goes for organic el display.But, the use as the present invention is not limited to this,
May serve as other liquid crystal displays or electronic material.
It addition, in the above-described embodiment, pulse laser is made to be scanned by making substrate mounting table move relatively,
But can also relatively make pulse laser be scanned by the optical system high-speed mobile making conduction pulse laser.
Embodiment 1
It follows that embodiments of the invention are compared with comparative example, and it is described.
Carry out following experiment: use the ultraviolet Solid State Laser annealing device 1 of above-mentioned embodiment, at glass
The amorphous silicon membrane irradiated with pulse laser that the surface of the substrate of system is formed by usual way.
In this experiment, the wavelength of pulse laser is located at the ultraviolet range of 355nm, pulse frequency is set to 8kHz,
Pulsewidth is set to 80nsec.Utilize attenuator 3 that energy density is adjusted to object energy density.
Utilize optical system by pulse laser shaping for becoming circular on machined surface, change the energy on machined surface close
Degree, beam sizes and irradiation number of times, the amorphous silicon film irradiated with pulse laser on substrate.Non-crystalline silicon is heated so that it is
Become crystalline silicon.Utilize the SEM photograph shown in Fig. 2 that the thin film carrying out this irradiation is evaluated.It addition, table 1 shows
Each condition and evaluation result.
The energy density of pulse laser is being set to 70mJ/cm2And in the thin film being irradiated, if irradiation number of times is set to
8000 times, then, as shown in photo 1, the crystallite of 10-20nm can be made.But, more owing to irradiating number of times, need longer place
The reason time, the most inapplicable.
It addition, energy density is being set to 70mJ/cm2And to irradiate number of times be under the irradiation of 800 times, amorphous silicon membrane not by
Crystallization.This is owing to energy density is too low, also fails to cause crystallization even if increasing irradiation number of times.
Then, the energy density of pulse laser being set to 140,160,180,200mJ/cm2In the case of, such as photo 2
～shown in 6, it is thus achieved that uniform grain.
Then, the energy density of pulse laser is being set to 250mJ/cm2In the case of, as shown in photo 7, owing to being added
Heat melts to the temperature exceeding crystalline melt point, therefore becomes fusion-crystallization and fails to obtain grain.
And, the energy density of pulse laser is being set to 260mJ/cm2In the case of, as shown in photo 8, there occurs burning
Erosion.
As it has been described above, only by the energy density of pulse laser, pulsewidth, irradiation number of times are set in suitable scope
In, uniform and trickle crystallization could be realized.
From above-mentioned photo, the method for the present invention deviation of the crystal grain diameter of the polysilicon membrane obtained is less,
Whole of this polysilicon membrane is by uniform polycrystallization, and this polysilicon membrane is the polysilicon membrane of high-quality.It addition, simultaneously
It has been confirmed that superposition portion also generates identical uniform crystallite.Owing to crystal silicon film can be obtained equably and crystal grain is little arrives
Below 50nm and do not produce projection, it is, therefore, apparent that the silicon fiml that the deviation of TFT characteristic is less can be provided.
[table 1]
Then, other embodiments of the present invention are compared with comparative example, and is described.
Carry out following experiment: use the ultraviolet Solid State Laser annealing device 1 of above-mentioned embodiment, at glass
The amorphous silicon membrane irradiated with pulse laser that the surface of the substrate of system is formed by usual way.In this experiment, pulse is swashed
The wavelength of light is located at the ultraviolet range of 355nm, and pulse frequency is set to 6～8kHz, and pulsewidth is set to 80ns (nsec).Utilize
Pulse energy density is adjusted to object energy density by attenuator 3.Stage speed is utilized to be adjusted irradiating number of times so that it is to become
Number of times is irradiated for object.Table 2 shows the energy density of each material to be tested, irradiates number of times.It addition, table 2 also show following institute
The degree of crystallinity measured.
Utilizing optical system by pulse laser shaping for become rectangle on machined surface, the non-crystalline silicon on substrate irradiates
This pulse laser.Non-crystalline silicon is heated so that it is become crystalline silicon.Utilize Fig. 3, the SEM photograph shown in 4 and as in Fig. 5
Raman spectrum shown in example measures and is evaluated the thin film carrying out this irradiation.Degree of crystallinity measures knot based on Raman spectrum
Really, the area/(face of the area of noncrystalline Si crest+crystallization Si crest of crystallization Si crest is calculated according to formula calculated as below (1)
Long-pending).
In below example and comparative example, specifically, the Ar ion laser of wavelength 514.5nm, output 2mW is gathered
Burnt to 1mm φ, the thin film thick to 50nm irradiates this Ar ion laser, to carry out Raman spectrum mensuration.Knot is measured by the Raman of Fig. 5
Fruit understands, at 520cm-1There is sharp-pointed crest in neighbouring Si, and at 480cm-1Neighbouring amorphous Si there's almost no crest.
Additionally, based on measurement result, utilize the Gauss curve fitting employing method of least square, be separated into two crest waveforms,
According to described calculating formula (1), gone out degree of crystallinity by two crest waveshapes respectively.
Example shown in Fig. 5 is the data of following embodiment No.3, and according to the above-mentioned result calculated, degree of crystallinity is about
88%.
(embodiment 2)
The energy density of pulse laser is being set to 130mJ/cm2, pulse frequency is set to 6kHz and has irradiated this pulse
In the thin film of laser, if being set to 6 times by irradiation number of times, then, as shown in photo 10, the crystallite of a diameter of 10～20nm can be made.
If utilizing Raman spectrum to measure degree of crystallinity is evaluated, then it is 85%.It addition, pulse frequency is set to 8kHz also can obtain phase
Same result.
(embodiment 3)
The energy density of pulse laser is being set to 140mJ/cm2, pulse frequency is set to 6kHz and has irradiated this pulse
In the thin film of laser, if being set to 6 times by irradiation number of times, then, as shown in photo 11, the crystallite of 10～20nm can be made.If utilizing
Raman spectrum measures and is evaluated degree of crystallinity, then be 88%.It addition, pulse frequency is set to 8kHz also can obtain identical knot
Really.
(embodiment 4)
The energy density of pulse laser is being set to 150mJ/cm2, pulse frequency is set to 6kHz and has irradiated this pulse
In the thin film of laser, if being set to 6 times by irradiation number of times, then, as shown in photo 12, the crystallite of 10～20nm can be made.If utilizing
Raman spectrum measures and is evaluated degree of crystallinity, then be 90%.It addition, pulse frequency is set to 8kHz also can obtain identical knot
Really.
(embodiment 5)
The energy density of pulse laser is being set to 160mJ/cm2, pulse frequency is set to 6kHz and has irradiated this pulse
In the thin film of laser, if being set to 6 times by irradiation number of times, then, as shown in photo 13, the crystallite of 20～30nm can be made.If utilizing
Raman spectrum measures and is evaluated degree of crystallinity, then be 90%.It addition, pulse frequency is set to 8kHz also can obtain identical knot
Really.
(embodiment 6)
The energy density of pulse laser is being set to 180mJ/cm2, pulse frequency is set to 6kHz and has irradiated this pulse
In the thin film of laser, if being set to 6 times by irradiation number of times, then, as shown in photo 14, the crystallite of 20～30nm can be made.If utilizing
Raman spectrum measures and is evaluated degree of crystallinity, then be 95%.It addition, pulse frequency is set to 8kHz also can obtain identical knot
Really.
(embodiment 7)
The energy density of pulse laser is being set to 200mJ/cm2, pulse frequency is set to 6kHz and has irradiated this pulse
In the thin film of laser, if being set to 6 times by irradiation number of times, then, as shown in photo 15, the crystallite of 40～50nm can be made.If utilizing
Raman spectrum measures and is evaluated degree of crystallinity, then be 95%.Even if also obtain identical it addition, pulse frequency to be set to 8kHz
Result.
(comparative example 1)
The energy density of pulse laser is being set to 250mJ/cm2, pulse frequency is set to 6kHz and has irradiated this pulse
In the thin film of laser, if irradiation number of times is set to 6 times, then as shown in photo 16, thin film be heated beyond fusing point temperature and
Become fusion-crystallization, thus uniform crystallization cannot be obtained.If utilizing Raman spectrum to measure degree of crystallinity is evaluated, it is then
97%.Even if it addition, irradiation number of times being reduced to 1 time also obtain identical result.
(comparative example 2)
The energy density of pulse laser is being set to 260mJ/cm2, pulse frequency is set to 6kHz and has irradiated this pulse
In the thin film of laser, if being set to 6 times by irradiation number of times, then as shown in photo 17, there is ablation.
(comparative example 3)
The energy density of pulse laser is being set to 120mJ/cm2, pulse frequency is set to 8kHz and has irradiated this pulse
In the thin film of laser, although if being set to 8 times by irradiation number of times, crystallization occurs, if but carrying out Secco etching, then such as photo 18 institute
Show, being etched everywhere of crystallization.If utilizing Raman spectrum to measure degree of crystallinity is evaluated, then it is 54%.
(embodiment 8)
The energy density of pulse laser is being set to 160mJ/cm2, pulse frequency is set to 8kHz and has irradiated this pulse
In the thin film of laser, if being set to 2 times by irradiation number of times, then, as shown in photo 19, the crystallite of 10～20nm can be made.If utilizing
Raman spectrum measures and is evaluated degree of crystallinity, then be 75%.
(embodiment 9)
The energy density of pulse laser is being set to 180mJ/cm2, pulse frequency is set to 8kHz and has irradiated this pulse
In the thin film of laser, if being set to 2 times by irradiation number of times, then, as shown in photo 20, the crystallite of 10～20nm can be made.If utilizing
Raman spectrum measures and is evaluated degree of crystallinity, then be 78%.
(comparative example 4)
Use wavelength be different from the 308nm of above-mentioned test, pulsewidth is that the XeCl excimer laser of 20nsec has carried out phase
Same test.The energy density of pulse laser is being set to 180mJ/cm2, pulse frequency is set to 300Hz and has irradiated this arteries and veins
In the thin film of impulse light, if after crystallization, carrying out Secco etching to carry out SEM observation, the most whole crystallization irradiation 8 times
Part is all etched.If utilizing Raman spectrum to measure degree of crystallinity is evaluated, then it is 54%.It is believed that this is due to wavelength
Relatively short-range missile causes only face, top layer crystallization.
(comparative example 5)
Use wavelength be different from the 308nm of above-mentioned test, pulsewidth is that the XeCl excimer laser of 20nsec has carried out phase
Same test.The energy density of pulse laser is being set to 200mJ/cm2, pulse frequency is set to 300Hz and has irradiated this arteries and veins
In the thin film of impulse light, if being set to 8 times by irradiation number of times, then, as shown in photo 21, thin film is heated beyond crystalline melt point
Temperature and become fusion-crystallization, thus uniform crystallization cannot be obtained.If utilizing Raman spectrum to measure degree of crystallinity is evaluated,
It is then 97%.
[table 2]
Additionally, in embodiment 3, mean diameter is 15nm, and standard deviation is 7nm, and in comparative example 1, average crystal grain is straight
Footpath is 72nm, and standard deviation is 42nm.
From Fig. 5 and Fig. 3, the photo of 4, the deviation of the crystal grain of the polysilicon membrane obtained by the present invention is less, and
The ratio of degree of crystallinity is higher.Further, it is also possible to confirm, whole by uniform polycrystallization, the superposition portion of laser also creates identical
Crystallization.Owing to crystal silicon film can be obtained equably and crystal grain is little to below 50nm and do not produce projection, it is, therefore, possible to provide
The silicon fiml that the deviation of TFT characteristic is less.
Above, describe the present invention based on above-mentioned embodiment and embodiment, but state on the invention is not restricted to
Bright scope, without departing from the scope of the present invention, it is of course possible to carry out suitable change.
Label declaration
1 ultraviolet Solid State Laser annealing device
2 ultraviolet solid laser oscillators
3 attenuators
4 bonders
5 optical fiber
6 except shaking platform
7 optical systems
70a condenser lens
70b condenser lens
71a beam homogenizer
71b beam homogenizer
8 substrates
8a amorphous silicon membrane
9 substrate mounting tables
10 scanning means
Claims (9)
1. the manufacture method of a crystalline film, it is characterised in that
Irradiate by the wavelength of 340～358nm to the amorphous silicon film overlap being present in substrate upper strata in the range of irradiating at 2～10 times
That formed, have 130～240mJ/cm2The pulse laser of energy density so that amorphous silicon film is less than crystalline melt point,
And described substrate is not heated, it is heated to making its crystallization become less than the temperature of crystalline melt point by described amorphous silicon film
The crystallite of below 50nm.
2. the manufacture method of crystalline film as claimed in claim 1, it is characterised in that
Described amorphous silicon film is heated to less than the temperature of its fusing point or exceedes described fusing point and be less than by described pulse laser
The temperature of crystalline melt point.
3. the manufacture method of crystalline film as claimed in claim 1, it is characterised in that
Described crystallization is to carry out in the range of 60～95% in degree of crystallinity.
4. the manufacture method of crystalline film as claimed in claim 1, it is characterised in that
The pulsewidth of described pulse laser is 5～100ns.
5. the manufacture method of crystalline film as claimed in claim 1, it is characterised in that
The pulse frequency of described pulse laser is 6～10kHz.
6. the manufacture method of crystalline film as claimed in claim 1, it is characterised in that
The short axis width of the pulse laser exposing to described amorphous silicon film is below 1.0mm.
7. the manufacture method of crystalline film as claimed in claim 1, it is characterised in that
Make described pulse laser described amorphous silicon film be relatively scanned and carry out described irradiation, this scanning speed be 50～
The 1000mm/ second.
8. the manufacture method of crystalline film as claimed in claim 7, it is characterised in that
Utilize optical system that described pulsed laser beam is shaped as rectangle or wire harness shape, make this optical system high-speed motion
Carry out described scanning.
9. the manufacture method of the crystalline film as according to any one of claim 1 to 8, it is characterised in that
By described crystallization obtain size be below 50nm, do not have bossed crystallite.
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| CN1173948A (en) * | 1995-12-14 | 1998-02-18 | 精工爱普生株式会社 | Thin-film semiconductor device, its method for making the same, liquid crystal display equipment and method for making the same |
| JP2008147487A (en) * | 2006-12-12 | 2008-06-26 | Japan Steel Works Ltd:The | Crystalline semiconductor film manufacturing method, semiconductor film heating control method, and semiconductor crystallizing device |
| CN101350331A (en) * | 2007-07-20 | 2009-01-21 | 株式会社半导体能源研究所 | Method for manufacturing display device |
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| JP3326654B2 (en) * | 1994-05-02 | 2002-09-24 | ソニー株式会社 | Method of manufacturing semiconductor chip for display |
| TW305063B (en) | 1995-02-02 | 1997-05-11 | Handotai Energy Kenkyusho Kk | |
| JPH10209069A (en) * | 1997-01-17 | 1998-08-07 | Sumitomo Heavy Ind Ltd | Method and equipment for laser annealing |
| JP2000208416A (en) * | 1999-01-14 | 2000-07-28 | Sony Corp | Crystallizing method for semiconductor thin film and laser irradiation apparatus |
| JP2004342785A (en) * | 2003-05-15 | 2004-12-02 | Sony Corp | Method of manufacturing semiconductor, and semiconductor manufacturing equipment |
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| CN1173948A (en) * | 1995-12-14 | 1998-02-18 | 精工爱普生株式会社 | Thin-film semiconductor device, its method for making the same, liquid crystal display equipment and method for making the same |
| JP2008147487A (en) * | 2006-12-12 | 2008-06-26 | Japan Steel Works Ltd:The | Crystalline semiconductor film manufacturing method, semiconductor film heating control method, and semiconductor crystallizing device |
| CN101350331A (en) * | 2007-07-20 | 2009-01-21 | 株式会社半导体能源研究所 | Method for manufacturing display device |
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