CN102099895A - Method for fabricating crystalline film and device for fabricating crystalline film - Google Patents

Method for fabricating crystalline film and device for fabricating crystalline film Download PDF

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Publication number
CN102099895A
CN102099895A CN2010800021510A CN201080002151A CN102099895A CN 102099895 A CN102099895 A CN 102099895A CN 2010800021510 A CN2010800021510 A CN 2010800021510A CN 201080002151 A CN201080002151 A CN 201080002151A CN 102099895 A CN102099895 A CN 102099895A
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pulse laser
film
crystalline
laser
crystallization
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CN102099895B (en
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富樫陵太郎
佐藤亮介
清野俊明
井波俊夫
草间秀晃
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JSW acdina System Co.,Ltd.
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Japan Steel Works Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

Abstract

An amorphous film is irradiated with pulse laser light having a wavelength of 340 to 358 nm and an energy density of 130 to 240 mJ/cm2, with a shot number of 1 to 10, and is thereby heated to a temperature not exceeding a crystalline melting point and crystallized. The pulse width, frequency, and minor axis width of the pulse laser light are preferably set to 5 to 100 ns, 6 to 10 kHz, and 1.0 mm or less, respectively, and the film is relatively scanned with the pulse laser light at a scanning speed of 50 to 1000 mm/s. As a result, a uniform and fine crystalline film having less variation in crystalline grain diameter can be effectively fabricated from the amorphous film, without damaging the substrate.

Description

The manufacture method of crystalline film and crystalline film manufacturing installation
Technical field
The present invention relates to make the trickle crystallization of this amorphous film make the manufacture method and the manufacturing installation of the crystalline film of crystalline film to the amorphous film irradiated with pulse laser.
Background technology
In order to make the crystallization silicon of the thin-film transistor (TFT) that is used for thin display flat-panel monitors such as liquid crystal indicator, the following two kinds of methods of general use: a kind of method is the laser annealing method, to the amorphous silicon film irradiated with pulse laser that is located at the substrate upper strata, make its fusion, crystallization again; Another kind method is solid state growth method (SPC, Solid Phase Crystallization), with heating furnace the described substrate that the upper strata has amorphous silicon film is heated, and does not make described silicon fiml fusion, makes crystalline growth under solid state.
In addition, the inventor has confirmed substrate temperature being remained under the state of heated condition, by irradiated with pulse laser, can obtain the polycrystalline film trickleer than solid state growth, and has proposed patent application (with reference to patent documentation 1).
Patent documentation 1: the Japan Patent spy opens the 2008-147487 communique
Summary of the invention
In the last few years, when making large-scale tv, wish to have the method for making even, large-area trickle polysilicon film at an easy rate with OLED (Organic Light Emitting Diode (Organic light-emitting diode)) panel or LCD (LCD (Liquid Crystal Display)) panel.
In addition, recently, in replacing the OLED display of LCD, carry out the luminous brightness that improves screen by organic EL self as most promising display of future generation.Because the luminescent material of organic EL is not to carry out driven as LCD, but carries out current drives, therefore to the requirement difference of TFT.In the TFT that amorphous silicon constituted, be difficult to suppress aging, threshold voltage (Vth) can produce significantly drift, the life-span of having limited device.On the other hand, polysilicon is owing to be stable material, so the life-span is longer.Yet in the TFT that polysilicon constituted, the characteristic deviation of TFT is bigger.The deviation of this TFT characteristic is because the interface (crystal boundary) of the crystal grain of the deviation of crystal grain diameter and silicon metal is present in the channel formation region territory of TFT, therefore more is easy to generate.The characteristic deviation of TFT mainly is present in the influence of the quantity of crystal grain diameter between raceway groove and crystal boundary easily.And if crystal grain diameter is bigger, then generally speaking electron mobility becomes big.Though the TFT electric field electron mobility of OLED display purposes is higher, the raceway groove that must prolong TFT is long, and the size of each 1 pixel of RGB (RGB) depends on that the raceway groove of TFT is long, can't obtain high-resolution.Therefore, require degree more and more higher for the less and trickle crystalline film of the deviation of crystal grain diameter.
But, in existing crystallization method, be difficult to address these problems.
This be because, the laser annealing method of one of them is to make the temporary transient fusion of amorphous silicon and the process of crystallization again, general formed crystal grain diameter is bigger, the deviation of crystal grain diameter is also bigger.Therefore, as former explanation, the electric field electron mobility is higher, and the quantity of the crystal grain diameter in the channel region of a plurality of TFT produces deviation, and the difference of the crystalline orientation of shape at random, adjacent crystallization, and the result can significantly influence the characteristic deviation of TFT.Be easy to occur difference in laser stack portion crystallinity especially, this crystalline difference can significantly influence the characteristic deviation of TFT.In addition, also exist because the pollutant (impurity) on surface can make crystallization produce the such problem of defective.
In addition, the particle diameter of the crystallization that is obtained by solid state growth method (SPC method) is less, the TFT deviation is less, is the most effective crystallization method that addresses the above problem.Yet its crystallization time is longer, is difficult to be used as mass production applications.Can carry out in the heat treatment step of solid state growth method (SPC), use the annealing device of the batch-type of handling the polylith substrate simultaneously.Owing to simultaneously a large amount of substrates is heated, therefore heating up and lowering the temperature needs the long period, and the temperature in the substrate is inhomogeneous easily.In addition, the solid state growth method then can cause contraction, the expansion of glass substrate self if carry out long-time heating with the temperature of the DEFORMATION POINTS temperature that is higher than glass substrate, and glass is caused damage.Because the crystallization temperature of SPC is higher than vitrification point, therefore less Temperature Distribution can make glass substrate generation bending or shrink and distribute.Consequently, even can carry out crystallization, in processes such as exposure process, also can have problems and be difficult to make device.The high more temperature homogeneity that needs more of treatment temperature.Generally speaking, crystallization rate depends on heating-up temperature, needs 10 to 15 hours under 600 ℃, needs 2 to 3 hours under 650 ℃, needs the processing time of dozens of minutes under 700 ℃.Glass substrate not to be caused damage in order handling, to need the long processing time, this method is difficult to be used as mass production applications.
The present invention is that background is finished with above-mentioned situation, and its purpose is to provide a kind of manufacture method of crystalline film, can be made the less trickle crystalline film of deviation of crystal grain diameter and substrate not caused damage by amorphous film efficiently.
That is, in the manufacture method of crystalline film of the present invention, a first aspect of the present invention is characterised in that, and is formed by the wavelength of 340～358nm to the amorphous film irradiation that is present in the substrate upper strata with 1～10 time irradiation number of times, have 130～240mJ/cm 2The pulse laser of energy density, described amorphous film is heated to the temperature that is no more than crystalline melt point and makes its crystallization.
Crystalline film manufacturing installation of the present invention comprises: pulsed laser light source, this pulsed laser light source output wavelength are the pulse laser of 340～358nm; Optical system, this optical system leads amorphous film so that it is shone with described pulse laser; Attenuator, this attenuator is adjusted the attenuation rate from the described pulse laser of described pulsed laser light source output, makes described laser with 130～240mJ/cm 2Energy density shine on the amorphous film; And scanning means, this scanning means makes described laser relatively move for described amorphous film, makes described pulse laser carry out overlapping irradiation on the described amorphous film in 1～10 time scope of irradiation.
According to the present invention, by with the irradiation number of times of the energy density of appropriateness and appropriateness to the pulse laser of amorphous film irradiation ultraviolet radiation wavelength region may to heat rapidly, amorphous film is heated to the temperature that is no more than crystalline melt point, can be with being different from existing fusion, the method for crystallization method again, obtain the less uniform grain of the deviation of particle diameter, for example size is 50nm grain following, that do not have projection.In existing fusion crystallization method, crystal grain diameter surpasses 50nm and bigger, and in addition, in this fusion crystallization method or utilize among the SPC (solid state growth method) of heating furnace, the deviation of crystal grain is bigger, can't obtain grain.
In addition, according to the present invention, owing to only be heated to the temperature of the fusing point that is no more than crystallization, therefore the not further phase transformation of film self of crystallization, for example, owing to only make amorphous silicon become crystalline silicon, therefore the position of superimposed pulse laser also can obtain identical crystallinity, thereby can improve uniformity.In addition, the irradiation of the pulse laser by the condition according to the present invention can be heated above amorphous film the temperature of existing solid state growth method.
In addition, by adopting pulse laser but not continuous oscillation, be not easy to reach the temperature that the substrate that makes substrate is damaged.In addition, in the present invention, do not need substrate is heated, but, do not get rid of substrate is heated as the present invention.Yet,, preferably carry out the irradiation of described pulse laser and substrate do not heated as the present invention.
In addition, be arranged at the amorphous film on the substrate if hydrogen content is more, then when shining with the high-energy as fusion crystallization method, may be cut off easily because of the molecular link of Si-H and take place easily to ablate and cause taking place the situation of dehydrogenation, but in the present invention, because silicon keeps solid phase ground to change, and is not easy to ablate, and therefore can handle the amorphous film of not dehydrogenation.
Then, defined terms among the present invention is described.
Wavelength region may: 340～358nm
Because described wavelength region may is to absorb wavelength region may preferably with respect to amorphous film, particularly amorphous silicon film, therefore, can directly amorphous film be heated with the pulse laser of this wavelength region may.Therefore, do not need laser absorption layer is arranged at indirectly the upper strata of amorphous film.In addition,, therefore can prevent that laser from causing substrate to be heated, can suppress the crooked and distortion of substrate, thereby can avoid substrate to be damaged because laser is absorbed fully by amorphous film.
In addition, though Wavelength of Laser can be absorbed with respect to amorphous film, particularly amorphous silicon film, but,, depend on the deviation of the thickness of amorphous film lower floor to a great extent with respect to the absorptivity of the light of the illuminated portion of amorphous film then because from the multipath reflection of lower floor's one side if transmission arranged.If described wavelength region may then because laser can be fully absorbed by amorphous film, particularly silicon fiml, therefore, can obtain polycrystalline film and need not too much to consider the thickness deviation of lower floor.In addition, owing to almost can ignore the transmission of amorphous film, therefore can also be applicable to the situation that on metal, is formed with amorphous film.
That is, if will utilize the Wavelength of Laser zone of crystallization to be made as the viewing area,, also there is the light of a part of transmission though then can partially absorb light because thickness is silicon about 500nm, therefore, if from (the SiO of silicon lower floor 2, resilient coating such as SiN layer) multipath reflection exert an influence, make resilient coating in uneven thickness of silicon lower floor, then can cause the absorptivity of silicon also to change.Even with SiO 2Also there is identical problem in the mode that is arranged at the upper strata of silicon on the cover layer.
In addition, if the wavelength region may of pulse laser is made as infrared spectral range, then owing to be absorbing light hardly in the silicon about 50nm at thickness, therefore, generally the upper layer part at silicon is provided with light absorbing zone.Yet,, can naturally and understandably cause increasing the operation of coating light absorbing zone and the operation of behind pulsed laser irradiation, removing light absorbing zone if use the manner.
From above-mentioned each viewpoint, in the present application, the wavelength region may of pulse laser is decided to be 340～358nm of ultraviolet range.
Energy density: 130～240mJ/cm 2
By the pulse laser to amorphous film irradiation energy density (on the amorphous film) appropriateness, amorphous film keeps solid phase or is heated to the temperature that surpasses amorphous fusing point and be no more than crystalline melt point and by crystallization, thereby can make crystallite.If energy density is lower, then can't fully improve the temperature of amorphous film, abundant crystallization, it is difficult that crystallization will become.On the other hand, if energy density is higher, then can produces fusion-crystallization, thereby ablate.Therefore, the energy density with pulse laser is limited to 130～240mJ/cm 2
Irradiation number of times: 1～10 time
To the amorphous film irradiated with pulse laser time, by suitably setting the irradiation number of times that shines in the same area,, also can utilize repeatedly irradiation to make the equalizing temperature of crystallization even in the beam area of irradiation, have energy deviation, finally make uniform crystallite.
If the irradiation number of times is more, then amorphous film may be heated to temperature, thereby fusion or ablation take place above crystalline melt point.In addition, along with increasing of irradiation number of times, the processing time can be elongated, and efficient is relatively poor.
Degree of crystallinity: 60～95%
In the condition of above-mentioned wavelength, energy density and irradiation number of times, the degree of crystallinity during crystallization preferably is decided to be 60～95%.If degree of crystallinity be less than 60%, then waiting when using the enough characteristics of difficult acquisition as thin-film transistor.If it is less to put on the energy of amorphous film, degree of crystallinity is reached more than 60%.In addition, if degree of crystallinity surpasses 95%, crystallization meeting thickization gradually then, thus be difficult to obtain the fine and homogeneous crystallization.If surpass crystalline melt point ground irradiated with pulse laser, then degree of crystallinity becomes easily and surpasses 95%.
In addition, particularly, degree of crystallinity can decide according to the ratio (area of crystallization Si crest/(area of the area of noncrystalline Si crest+crystallization Si crest)) of the area at the area of the peak crystallization of utilizing Raman spectrum to obtain and noncrystalline peak.
In addition, the pulsewidth of pulse laser (half width) preferably is made as 5～100ns.If pulsewidth is less, then maximum power density increases, and may be heated to the temperature above fusing point, thereby fusion or ablation take place.In addition, if pulsewidth is bigger, then maximum power density reduces, and may be heated to the temperature that makes its solid phase crystallization.
In addition, the pulse frequency of pulse laser is preferably 6～10kHz.
By the pulse frequency (more than the 6kHz) that improves pulse laser to a certain extent, because the time interval between the irradiation diminishes, kept by amorphous film by the heat that pulsed laser irradiation produced, therefore can play effect to crystallization effectively.On the other hand, if pulse frequency becomes too high, fusion, ablation take place easily then.
In addition, the minor axis width of described pulse laser preferably is made as below the 1.0mm.
By pulse laser being scanned along the minor axis Width, can partly shine, heat amorphous film, can carry out crystallization again on a large scale and handle.But if the minor axis width is too big, then for crystallization is with regard to the necessary sweep speed that increases efficiently, installation cost can improve.
By described pulse laser is relatively scanned amorphous film, can make described amorphous film along the surface direction crystallization.This scanning can make the pulse laser side shifting, can make the amorphous film side shifting, and both are moved.The best speed with 50～1000mm/ second of described scanning is carried out.
If this sweep speed is less, then maximum power density increases, and amorphous film may be heated to the temperature above crystalline melt point, thereby fusion or ablation take place.In addition, if sweep speed is bigger, then maximum power density reduces, and may be heated to the temperature that makes its solid phase crystallization.
In addition, manufacturing installation of the present invention can use the Solid State Laser light source of the pulse laser of output ultraviolet range to export the pulse laser of the wavelength region may of expectation, thereby can utilize the good LASER Light Source of maintainability to carry out the making of crystallite.In order to obtain uniform crystallite, can utilize the energy adjustment part suitably energy density to be adjusted, again to the amorphous film irradiated with pulse laser.The energy adjustment part is adjusted to obtain the energy density of regulation the output of Solid State Laser light source, also can be to adjusting from the attenuation rate of the pulse laser of Solid State Laser light source output etc., to adjust energy density.By utilizing scanning means that this pulse laser is relatively scanned amorphous film, can amorphous film on a large scale in obtain trickle and uniform crystallization with suitable degree of crystallinity.Utilize the frequency of this scanning paired pulses, the minor axis width and the sweep speed of pulse laser to set, the number of times that the same area to amorphous film is shone is 1～10.
Thereby the optical system that scanning means also can make paired pulses laser lead moves pulse laser is moved, and perhaps, the pedestal that disposes amorphous film is moved.
As described above, according to the present invention,, formed to the amorphous film irradiation that is positioned at the substrate upper strata, have 130～240mJ/cm by the wavelength of 340～358nm with 1～10 time irradiation number of times 2The pulse laser of energy density, described amorphous film is heated to the temperature that is no more than crystalline melt point and makes its crystallization, therefore, can make the average crystallite granularity little exist in the channel region that can make TFT a plurality of crystal grain, have excellent especially inhomogeneity crystalline film, thereby can solve described problem.Recently, because wiring width diminishing, and the size in the channel formation region territory of TFT (channel length, channel width) also diminishing, and therefore, needs a kind of method that can make the less stable crystalline film of average grain diameter in the whole base plate zone equably.Need a kind of minimum crystallization technology of difference that makes the TFT characteristic of adjacent area especially, utilize the present invention can realize described requirement reliably.Simultaneously can also remove the impurity that is attached to the film surface.
In addition,, can reduce the cost and the maintenance cost of device, can carry out utilization of capacity high processing, can improve productivity thus according to the present invention.
In addition, according to the present invention, owing to adopted the branchpoint that no matter is no more than substrate (glass substrate etc.) or surpassed branchpoint, therefore the technology that can both handle at low temperatures, can only make amorphous film be heated to high temperature and make its crystallization with laser.Have simultaneously and can generate the such effect of crystallite below the 50nm in the short time.Have simultaneously in stack portion and also can generate the such effect (effective) of crystallite below the identical 50nm large-area crystallization.
The deformation (bending, distortion, internal stress) that has simultaneously substrate is suppressed at MIN effect.Has the effect that removes the impurity that is present in the amorphous film and be attached to the pollutant on surface by substrate is heated slightly simultaneously.
Description of drawings
Fig. 1 is the longitudinal sectional view of expression as the ultraviolet Solid State Laser annealing in process device of the manufacturing installation of an embodiment of the invention.
Fig. 2 represents to change in an embodiment to create conditions and the SEM photo of film after the irradiated with pulse laser in the same manner.
Fig. 3 represents to change in other embodiments to create conditions and the SEM photo of film after the irradiated with pulse laser in the same manner.
Fig. 4 represents to change in other embodiments to create conditions and the SEM photo of film after the irradiated with pulse laser in the same manner.
Fig. 5 is the figure that represents the Raman spectrum measurement result in the same manner.
Embodiment
Below, based on Fig. 1 an embodiment of the invention are described.
In the manufacture method of the crystalline film of present embodiment, the substrate of establishing to be used for flat-panel monitor TFT device 8 is an object, is formed with amorphous silicon membrane 8a as amorphous film on this substrate 8.Amorphous silicon membrane 8a is formed at the upper strata of substrate 8 by usual way, omits dehydrogenation and handles.
But,, become the substrate of object and the classification of amorphous film formed thereon and be not limited thereto as the present invention.
Fig. 1 is the figure of ultraviolet Solid State Laser annealing in process device 1 of the manufacture method of the expression crystalline film that is used for an embodiment of the invention, and this ultraviolet ray Solid State Laser annealing in process device 1 is equivalent to crystalline film manufacturing installation of the present invention.
In ultraviolet Solid State Laser annealing in process device 1, wavelength, the pulse frequency that output has 340～358nm is that 6～10kHz, pulsewidth are that the ultraviolet solid laser oscillator 2 of the pulse laser of 5～100ns is arranged at and removes on the platform 6 that shakes, in this ultraviolet ray solid laser oscillator 2, comprise the control circuit 2a of production burst signal.
Outlet side at ultraviolet solid laser oscillator 2 disposes attenuator 3, and optical fiber 5 is connected via the outlet side of coupler 4 with attenuator 3.The transmission destination of optical fiber 5 is connected with the optical system 7 that comprises condenser lens 70a, 70b and be disposed at beam homogenizer 71a, 71b etc. between this condenser lens 70a, the 70b.In the ejaculation direction of optical system 7, be provided with the substrate mounting table 9 that puts substrate 8.Optical system 7 is set, and is rectangle or wire harness shape below the 1.0mm with pulse laser shaping for the minor axis width.
Aforesaid substrate mounting table 9 can move along the surface direction (XY direction) of this substrate mounting table 9, comprises making the scanning means 10 of this substrate mounting table 9 along described surface direction high-speed mobile.
Then, the crystallization method to the amorphous silicon membrane that used above-mentioned ultraviolet Solid State Laser annealing in process device 1 describes.
At first, on substrate mounting table 9, put the substrate 8 that is formed with amorphous silicon membrane 8a on the upper strata.This substrate 8 does not utilize heater etc. to heat in the present embodiment.
Production burst signal in control circuit 2a, with output pulse frequency preestablish (6～10kHz), pulsewidth is the pulse laser of 5～100ns, according to this pulse signal, utilizing ultraviolet solid laser oscillator 2 output wavelengths is the pulse laser of 340～358nm.
Arrive attenuator 3 from the pulse laser of ultraviolet solid laser oscillator 2 outputs, thereby decay by the attenuation rate of attenuator 3 with regulation.This attenuation rate is set to, and pulse laser becomes the energy density of the present invention's regulation at machined surface.Attenuator 3 also can make attenuation rate variable.
The pulse laser of having adjusted energy density is directed into optical system 7 by optical fiber 5 transmission.In optical system 7, as mentioned above, utilize condenser lens 70a, 70b, beam homogenizer 71a, 71b etc. that pulse laser shaping is rectangle below the 1.0mm or wire harness shape for the minor axis width, by being 130～240mJ/cm on machined surface 2Energy density to substrate 8 irradiation.
Aforesaid substrate mounting table 9 utilizes scanning means 10, moves along the minor axis Width of amorphous silicon membrane 8a face at described wire harness, consequently, in the wide region of this amorphous silicon membrane 8a face, relatively scans and shines above-mentioned pulse laser.In addition, the setting of translational speed of scanning means is made as 50～1000mm/ second with the sweep speed of pulse laser according to this moment, in the same area of amorphous silicon membrane 8a irradiation number of times irradiated with pulse laser with 1～10 time.This irradiation number of times decides based on the minor axis width of described pulse frequency, pulsewidth, pulse laser and the sweep speed of pulse laser.
Utilize the irradiation of above-mentioned pulse laser, have only the amorphous silicon membrane 8a on the substrate 8 to be heated, at short notice by polycrystallization.At this moment, the heating-up temperature of amorphous silicon membrane 8a becomes the temperature (for example being above about 1000 ℃～1400 ℃) that is no more than crystalline melt point.In addition, heating-up temperature can be made as the temperature that is no more than the noncrystalline melting temperature, perhaps is made as above the noncrystalline melting temperature, is no more than the temperature of crystalline melt point.
The crystal grain diameter that utilizes the crystalline membrane that above-mentioned irradiation obtains is for below the 50nm, and crystalline membrane is viewed projection in existing solid-phase crystallization growth method not, has the crystallinity of even and trickle high-quality.For example, can enumerate average crystal grain especially is that 20nm is following, standard deviation is the following example of 10nm.Crystal grain can be measured by atomic force microscope (AFM).In addition, can calculate degree of crystallinity based on the ratio meter of the area at area that utilizes the resulting peak crystallization of Raman spectrum and noncrystalline peak, this degree of crystallinity is preferably 60～95%.
Above-mentioned crystalline membrane goes for OLED display.But, be not limited thereto as use of the present invention, can be used as other LCD or electronic material.
In addition, in the above-described embodiment, pulse laser is scanned, but also can pulse laser be scanned by substrate mounting table is moved.
Embodiment 1
Next, embodiments of the invention and comparative example are compared, and be described.
Carried out following experiment: use the ultraviolet Solid State Laser annealing in process device 1 of above-mentioned execution mode, on the surface of the substrate of glass by the formed amorphous silicon membrane irradiated with pulse laser of usual way.
In this test, the wavelength of pulse laser is located at the ultraviolet range of 355nm, pulse frequency is made as 8kHz, pulsewidth is made as 80nsec.Utilize attenuator 3 that energy density is adjusted into the object energy density.
Utilizing optical system is to become circle on machined surface with pulse laser shaping, changes energy density, beam sizes and irradiation number of times on the machined surface, the amorphous silicon film irradiated with pulse laser on substrate.Amorphous silicon is heated, make it become crystalline silicon.Utilize SEM photo shown in Figure 2 that the film that has carried out this irradiation is estimated.In addition, each condition and evaluation result have been shown in the table 1.
Be made as 70mJ/cm in energy density with pulse laser 2And in the film that shines,, then shown in photo 1, can make the crystallite of 10-20nm if will shine number of times is made as 8000 times.Yet, because the irradiation number of times is more, need the long processing time, therefore industrial inapplicable.
In addition, energy density is being made as 70mJ/cm 2And the irradiation number of times is that amorphous silicon membrane is not by crystallization under 800 times the irradiation.This is because energy density is low excessively, also fails to cause crystallization even increase the irradiation number of times.
Then, be made as 140,160,180 in energy density with pulse laser, 200mJ/cm 2Situation under, shown in photo 2～6, obtained uniform grain.
Then, be made as 250mJ/cm in energy density with pulse laser 2Situation under, shown in photo 7, therefore the fusion owing to be heated to above the temperature of crystalline melt point has become fusion-crystallization and has failed to obtain grain.
And, be made as 260mJ/cm in energy density with pulse laser 2Situation under, shown in photo 8, ablation has taken place.
As mentioned above, have only by energy density, pulsewidth, irradiation number of times to be set in the suitable scope, could realize even and trickle crystallization pulse laser.
By above-mentioned photo as can be known, less by the deviation of the crystal grain diameter of the polysilicon membrane that method of the present invention obtained, whole the even polycrystallization of quilt of this polysilicon membrane, and this polysilicon membrane is the polysilicon membrane of high-quality.In addition, can confirm that stack portion also generates identical uniform crystallite simultaneously.Crystal grain is little below 50nm and do not produce projection owing to can obtain crystal silicon film equably, therefore, obviously can provide the less silicon fiml of deviation of TFT characteristic.
[table 1]
Figure BPA00001306691900111
Then, other embodiment of the present invention and comparative example are compared, and be described.
Carried out following experiment: use the ultraviolet Solid State Laser annealing in process device 1 of above-mentioned execution mode, on the surface of the substrate of glass by the formed amorphous silicon membrane irradiated with pulse laser of usual way.In this test, the wavelength of pulse laser is located at the ultraviolet range of 355nm, pulse frequency is made as 6～8kHz, pulsewidth is made as 80ns (nsec).Utilize attenuator 3 that pulse energy density is adjusted into the object energy density.Utilize stage speed that the irradiation number of times is adjusted, make it become object irradiation number of times.Table 2 shows each energy density for the examination material, irradiation number of times.In addition, the degree of crystallinity of being measured below table 2 also shows.
Utilize optical system with pulse laser shaping on machined surface, to become rectangle, the amorphous silicon on substrate shines this pulse laser.Amorphous silicon is heated, make it become crystalline silicon.Utilizing SEM photo shown in Fig. 3,4 and the Raman spectrum shown in the example among Fig. 5 to measure estimates the film that has carried out this irradiation.Degree of crystallinity is calculated area/(area of the area of noncrystalline Si crest+crystallization Si crest) of crystallization Si crest based on the Raman spectrum measurement result according to following calculating formula (1).
In following embodiment and comparative example, particularly, the Ar ion laser of wavelength 514.5nm, output 2mW is focused to 1mm φ, the thick film of 50nm is shone this Ar ion laser, measure to carry out Raman spectrum.By Raman's measurement result of Fig. 5 as can be known, at 520cm -1There is sharp-pointed crest near Si, and at 480cm -1There is crest hardly near amorphous Si.
In addition,, utilize the Gauss curve fitting of having used least square method, be separated into two crest waveforms,, calculate degree of crystallinity by two crest waveforms respectively according to described calculating formula (1) based on measurement result.
Example shown in Figure 5 is the data of following embodiment No.3, and according to the result that aforementioned calculation goes out, degree of crystallinity is about 88%.
(embodiment 2)
Be made as 130mJ/cm in energy density with pulse laser 2, pulse frequency be made as 6kHz and shone in the film of this pulse laser, if will shine number of times is made as 6 times, then shown in photo 10, can make the crystallite that diameter is 10～20nm.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 85%.In addition, pulse frequency is made as 8kHz and also can obtains identical result.
(embodiment 3)
Be made as 140mJ/cm in energy density with pulse laser 2, pulse frequency be made as 6kHz and shone in the film of this pulse laser, if will shine number of times is made as 6 times, then shown in photo 11, can make the crystallite of 10～20nm.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 88%.In addition, pulse frequency is made as 8kHz and also can obtains identical result.
(embodiment 4)
Be made as 150mJ/cm in energy density with pulse laser 2, pulse frequency be made as 6kHz and shone in the film of this pulse laser, if will shine number of times is made as 6 times, then shown in photo 12, can make the crystallite of 10～20nm.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 90%.In addition, pulse frequency is made as 8kHz and also can obtains identical result.
(embodiment 5)
Be made as 160mJ/cm in energy density with pulse laser 2, pulse frequency be made as 6kHz and shone in the film of this pulse laser, if will shine number of times is made as 6 times, then shown in photo 13, can make the crystallite of 20～30nm.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 90%.In addition, pulse frequency is made as 8kHz and also can obtains identical result.
(embodiment 6)
Be made as 180mJ/cm in energy density with pulse laser 2, pulse frequency be made as 6kHz and shone in the film of this pulse laser, if will shine number of times is made as 6 times, then shown in photo 14, can make the crystallite of 20～30nm.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 95%.In addition, pulse frequency is made as 8kHz and also can obtains identical result.
(embodiment 7)
Be made as 200mJ/cm in energy density with pulse laser 2, pulse frequency be made as 6kHz and shone in the film of this pulse laser, if will shine number of times is made as 6 times, then shown in photo 15, can make the crystallite of 40～50nm.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 95%.In addition, even being made as 8kHz, pulse frequency also obtained identical result.
(comparative example 1)
Be made as 250mJ/cm in energy density with pulse laser 2, pulse frequency be made as 6kHz and shone in the film of this pulse laser, if will shine number of times is made as 6 times, then shown in photo 16, film is heated to above the temperature of fusing point and becomes fusion-crystallization, thereby can't obtain uniform crystallization.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 97%.In addition, be reduced to 1 time and also obtained identical result even will shine number of times.
(comparative example 2)
Be made as 260mJ/cm in energy density with pulse laser 2, pulse frequency be made as 6kHz and shone in the film of this pulse laser, if will shine number of times is made as 6 times, then shown in photo 17, ablate.
(comparative example 3)
Be made as 120mJ/cm in energy density with pulse laser 2, pulse frequency be made as 8kHz and shone in the film of this pulse laser, though if will shine number of times is made as 8 times crystallization then takes place, as if carrying out the Secco etching, then shown in photo 18, crystallization all etched everywhere.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 54%.
(embodiment 8)
Be made as 160mJ/cm in energy density with pulse laser 2, pulse frequency be made as 8kHz and shone in the film of this pulse laser, if will shine number of times is made as 2 times, then shown in photo 19, can make the crystallite of 10～20nm.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 75%.
(embodiment 9)
Be made as 180mJ/cm in energy density with pulse laser 2, pulse frequency be made as 8kHz and shone in the film of this pulse laser, if will shine number of times is made as 2 times, then shown in photo 20, can make the crystallite of 10～20nm.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 78%.
(comparative example 4)
Using wavelength is that 308nm, the pulsewidth that is different from above-mentioned test carried out identical test as the XeCl excimer laser of 20nsec.Be made as 180mJ/cm in energy density with pulse laser 2, pulse frequency be made as 300Hz and shone in the film of this pulse laser, if after the crystallization, carry out Secco etching in order to carry out SEM to observe irradiation 8 times, then whole crystallization part is all etched.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 54%.Can think that this is because wavelength causes than short-range missile and has only top layer face crystallization.
(comparative example 5)
Using wavelength is that 308nm, the pulsewidth that is different from above-mentioned test carried out identical test as the XeCl excimer laser of 20nsec.Be made as 200mJ/cm in energy density with pulse laser 2, pulse frequency be made as 300Hz and shone in the film of this pulse laser, if will shine number of times is made as 8 times, then shown in photo 21, film is heated to above the temperature of crystalline melt point and becomes fusion-crystallization, thereby can't obtain uniform crystallization.If utilize Raman spectrum to measure degree of crystallinity being estimated, then is 97%.
Figure BPA00001306691900151
[table 2]
In addition, in embodiment 3, average grain diameter is 15nm, and standard deviation is 7nm, and in comparative example 1, average crystal grain diameter is 72nm, and standard deviation is 42nm.
By Fig. 5 and Fig. 3,4 photo as can be known, less with the deviation of the crystal grain of the polysilicon membrane that the present invention obtained, and the ratio of degree of crystallinity is higher.In addition, can also confirm, whole the even polycrystallization of quilt, the stack portion of laser has also generated identical crystallization.Crystal grain is little below 50nm and do not produce projection owing to can obtain crystal silicon film equably, therefore, can provide the less silicon fiml of deviation of TFT characteristic.
More than, describe the present invention based on above-mentioned execution mode and embodiment, but the invention is not restricted to the scope of above-mentioned explanation, only otherwise depart from the scope of the present invention, certainly carry out suitable change.
Label declaration
1 ultraviolet Solid State Laser annealing in process device
2 ultraviolet solid laser oscillators
3 attenuators
4 couplers
5 optical fiber
6 remove the platform that shakes
7 optical systems
The 70a condenser lens
The 70b condenser lens
The 71a beam homogenizer
The 71b beam homogenizer
8 substrates
The 8a amorphous silicon membrane
9 substrate mounting tables
10 scanning means

Claims (13)

1. the manufacture method of a crystalline film is characterized in that,
Formed by the wavelength of 340～358nm with 1～10 time irradiation number of times to the amorphous film irradiation that is present in the substrate upper strata, have 130～240mJ/cm 2The pulse laser of energy density, described amorphous film is heated to the temperature that is no more than crystalline melt point and makes its crystallization.
2. the manufacture method of crystalline film as claimed in claim 1 is characterized in that,
Described pulse laser is heated to temperature that is no more than its fusing point or the temperature that is no more than crystalline melt point above described fusing point with described amorphous film.
3. the manufacture method of crystalline film as claimed in claim 1 or 2 is characterized in that,
Described crystallization is carried out in degree of crystallinity is 60～95% scope.
4. as the manufacture method of each described crystalline film in the claim 1 to 3, it is characterized in that,
The pulsewidth of described pulse laser is 5～100ns.
5. as the manufacture method of each described crystalline film in the claim 1 to 4, it is characterized in that,
The pulse frequency of described pulse laser is 6～10kHz.
6. as the manufacture method of each described crystalline film in the claim 1 to 5, it is characterized in that,
The minor axis width that exposes to the pulse laser of described amorphous film is below the 1.0mm.
7. as the manufacture method of each described crystalline film in the claim 1 to 6, it is characterized in that,
Described pulse laser is relatively scanned described amorphous film and carry out described irradiation, this sweep speed is 50～1000mm/ second.
8. the manufacture method of crystalline film as claimed in claim 7 is characterized in that,
Utilize optical system that described pulsed laser beam is shaped as rectangle or wire harness shape, make this optical system high-speed motion carry out described scanning.
9. as the manufacture method of each described crystalline film in the claim 1 to 8, it is characterized in that,
Obtaining size by described crystallization is crystallite below the 50nm, that do not have projection.
10. a crystalline film manufacturing installation is characterized in that, comprising:
Pulsed laser light source, this pulsed laser light source output wavelength are the pulse laser of 340～358nm;
Optical system, this optical system leads amorphous film so that it is shone with described pulse laser;
Attenuator, this attenuator is adjusted the attenuation rate from the described pulse laser of described pulsed laser light source output, makes described laser with 130～240mJ/cm 2Energy density shine on the amorphous film; And
Scanning means, this scanning means make described laser relatively move for described amorphous film, so that described pulse laser is carrying out overlapping irradiation on the described amorphous film in 1～10 time scope of irradiation.
11. crystalline film manufacturing installation as claimed in claim 10 is characterized in that,
Described pulsed laser light source output pulse frequency is the pulse laser of 6～10kHz.
12. as claim 10 or 11 described crystalline film manufacturing installations, it is characterized in that,
It is rectangle or wire harness shape below the 1.0mm that described optical system is shaped as the minor axis width with described pulsed laser beam.
13. as each described crystalline film manufacturing installation in the claim 10 to 12, it is characterized in that,
Described pulsed laser light source output pulse width is the pulse laser of 5～100ns.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1173948A (en) * 1995-12-14 1998-02-18 精工爱普生株式会社 Thin-film semiconductor device, its method for making the same, liquid crystal display equipment and method for making the same
JPH10209069A (en) * 1997-01-17 1998-08-07 Sumitomo Heavy Ind Ltd Method and equipment for laser annealing
US5888839A (en) * 1994-05-02 1999-03-30 Sony Corporation Method of manufacturing semiconductor chips for display
JP2004342785A (en) * 2003-05-15 2004-12-02 Sony Corp Method of manufacturing semiconductor, and semiconductor manufacturing equipment
JP2008147487A (en) * 2006-12-12 2008-06-26 Japan Steel Works Ltd:The Crystalline semiconductor film manufacturing method, semiconductor film heating control method, and semiconductor crystallizing device
CN101350331A (en) * 2007-07-20 2009-01-21 株式会社半导体能源研究所 Method for manufacturing display device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW305063B (en) 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
JP2000208416A (en) * 1999-01-14 2000-07-28 Sony Corp Crystallizing method for semiconductor thin film and laser irradiation apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5888839A (en) * 1994-05-02 1999-03-30 Sony Corporation Method of manufacturing semiconductor chips for display
CN1173948A (en) * 1995-12-14 1998-02-18 精工爱普生株式会社 Thin-film semiconductor device, its method for making the same, liquid crystal display equipment and method for making the same
JPH10209069A (en) * 1997-01-17 1998-08-07 Sumitomo Heavy Ind Ltd Method and equipment for laser annealing
JP2004342785A (en) * 2003-05-15 2004-12-02 Sony Corp Method of manufacturing semiconductor, and semiconductor manufacturing equipment
JP2008147487A (en) * 2006-12-12 2008-06-26 Japan Steel Works Ltd:The Crystalline semiconductor film manufacturing method, semiconductor film heating control method, and semiconductor crystallizing device
CN101350331A (en) * 2007-07-20 2009-01-21 株式会社半导体能源研究所 Method for manufacturing display device

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