CN102067235A - 以nand为基础的nmos nor闪存单元,以nand为基础的nmos nor闪存阵列及该单元和该阵列的形成方法 - Google Patents

以nand为基础的nmos nor闪存单元,以nand为基础的nmos nor闪存阵列及该单元和该阵列的形成方法 Download PDF

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Publication number
CN102067235A
CN102067235A CN2009801229621A CN200980122962A CN102067235A CN 102067235 A CN102067235 A CN 102067235A CN 2009801229621 A CN2009801229621 A CN 2009801229621A CN 200980122962 A CN200980122962 A CN 200980122962A CN 102067235 A CN102067235 A CN 102067235A
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CN
China
Prior art keywords
voltage
transistor
flash memory
electric charge
preserved
Prior art date
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Pending
Application number
CN2009801229621A
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English (en)
Chinese (zh)
Inventor
李武开
许富菖
曹兴亚
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Aplus Flash Technology Inc
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Aplus Flash Technology Inc
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Publication date
Application filed by Aplus Flash Technology Inc filed Critical Aplus Flash Technology Inc
Publication of CN102067235A publication Critical patent/CN102067235A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
CN2009801229621A 2008-05-07 2009-05-07 以nand为基础的nmos nor闪存单元,以nand为基础的nmos nor闪存阵列及该单元和该阵列的形成方法 Pending CN102067235A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12685408P 2008-05-07 2008-05-07
US61/126,854 2008-05-07
PCT/US2009/002817 WO2009137065A1 (en) 2008-05-07 2009-05-07 A nand based nmos nor flash memory cell/array and a method of forming same

Publications (1)

Publication Number Publication Date
CN102067235A true CN102067235A (zh) 2011-05-18

Family

ID=41264886

Family Applications (1)

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CN2009801229621A Pending CN102067235A (zh) 2008-05-07 2009-05-07 以nand为基础的nmos nor闪存单元,以nand为基础的nmos nor闪存阵列及该单元和该阵列的形成方法

Country Status (5)

Country Link
EP (1) EP2308051A1 (ja)
JP (1) JP2011523156A (ja)
KR (1) KR20110008297A (ja)
CN (1) CN102067235A (ja)
WO (1) WO2009137065A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105556609A (zh) * 2013-12-02 2016-05-04 赛普拉斯半导体公司 用于具有共源极线的存储单元的系统、方法和装置
CN107946305A (zh) * 2016-10-12 2018-04-20 力旺电子股份有限公司 非挥发性存储器

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204299A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 不揮発性半導体記憶装置
JP6266479B2 (ja) * 2014-09-12 2018-01-24 東芝メモリ株式会社 メモリシステム
CN112053723B (zh) * 2020-09-16 2023-05-05 中国科学院微电子研究所 一种三维闪存预充方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3004043B2 (ja) 1990-10-23 2000-01-31 株式会社東芝 不揮発性半導体メモリ装置
JP2006005371A (ja) * 1992-04-07 2006-01-05 Renesas Technology Corp 不揮発性半導体記憶装置
JPH1187662A (ja) * 1997-09-08 1999-03-30 Sony Corp 不揮発性半導体記憶装置及びその書き込み方法
US6643178B2 (en) * 2001-07-31 2003-11-04 Fujitsu Limited System for source side sensing
US6529412B1 (en) * 2002-01-16 2003-03-04 Advanced Micro Devices, Inc. Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge
JP3923822B2 (ja) * 2002-03-12 2007-06-06 力晶半導體股▲ふん▼有限公司 ランダムプログラミングが可能な不揮発性半導体メモリ
JP2004241558A (ja) * 2003-02-05 2004-08-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法、半導体集積回路及び不揮発性半導体記憶装置システム
KR100512181B1 (ko) * 2003-07-11 2005-09-05 삼성전자주식회사 멀티 레벨 셀을 갖는 플래시 메모리 장치와 그것의 독출방법 및 프로그램 방법
JP4163610B2 (ja) * 2003-12-22 2008-10-08 株式会社東芝 不揮発性半導体記憶装置
US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
JP4381278B2 (ja) 2004-10-14 2009-12-09 株式会社東芝 不揮発性半導体記憶装置の制御方法
JP2007281481A (ja) * 2006-04-10 2007-10-25 Samsung Electronics Co Ltd 不揮発性メモリを有する半導体素子及びその形成方法
JP5010192B2 (ja) * 2006-06-22 2012-08-29 株式会社東芝 不揮発性半導体記憶装置
JP4886434B2 (ja) * 2006-09-04 2012-02-29 株式会社東芝 不揮発性半導体記憶装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105556609A (zh) * 2013-12-02 2016-05-04 赛普拉斯半导体公司 用于具有共源极线的存储单元的系统、方法和装置
CN105556609B (zh) * 2013-12-02 2020-11-03 经度快闪存储解决方案有限责任公司 用于具有共源极线的存储单元的系统、方法和装置
CN107946305A (zh) * 2016-10-12 2018-04-20 力旺电子股份有限公司 非挥发性存储器

Also Published As

Publication number Publication date
JP2011523156A (ja) 2011-08-04
KR20110008297A (ko) 2011-01-26
EP2308051A1 (en) 2011-04-13
WO2009137065A1 (en) 2009-11-12

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Application publication date: 20110518