CN102044465A - 处理半导体晶片的装置及方法 - Google Patents

处理半导体晶片的装置及方法 Download PDF

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CN102044465A
CN102044465A CN2010105128817A CN201010512881A CN102044465A CN 102044465 A CN102044465 A CN 102044465A CN 2010105128817 A CN2010105128817 A CN 2010105128817A CN 201010512881 A CN201010512881 A CN 201010512881A CN 102044465 A CN102044465 A CN 102044465A
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CN102044465B (zh
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林钰富
陈永镇
李宏仁
林进祥
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明提供一种处理半导体晶片的装置及方法，该装置用来在对每一半导体晶片同步进行处理操作时，以反方向同时移动多个半导体晶片。半导体晶片以共平面方式定位且配置于多个载台上，该载台以反方向同时移动以产生为零的一净系统动量。各个半导体晶片的裸片透过一全晶片校准导向以相同空间顺序作处理。由于各个载台的反向运动相互抵消，因此不需一平衡台抵消载台的运动。本发明的装置及方法不会受到载台移动时所产生的震动、干扰。

Description

处理半导体晶片的装置及方法
技术领域
本发明涉及一种半导体制造装置，尤其涉及一种利用多个处理操作同时处理多个晶片的半导体制造工具，其中处理操作涉及处理期间的半导体晶片的运动。
背景技术
在现今半导体制造业中，逐渐增加的集成程度及渐减尺寸需使用高度准确及精密的半导体制造装置。当制造工具在处理期间或处理前牵涉半导体晶片运动时，此运动必需高度准确、精密且避免震动或其他干扰，防止造成半导体晶片的位移、失准、低解析度、其他异常或缺失等。
此外，于有限时间内制造出更多且低制造成本的半导体装置亦为另一重要议题。因此，利用可同时处理多个半导体晶片的半导体制造工具可降低制造时间并增加产出量，进而降低制造成本。许多可同时处理多个半导体晶片的半导体制造工具牵涉当晶片在处理期间的同步运动。举例来说，在一微影(photolithography)技术下，如步进机(stepper)，一半导体基体固定于一载台且该载台依据电子束、固定曝光或直描系统元件逐步移动。为同步处理多个基体于半导体工具且维持移动部分的完整，例如固定晶片的载台，传统方式包含有如图1及图2所示的装置。
图1为根据公知技术的一装置，主要解决用来固定半导体晶片的载台于移动时的震动或其他干扰问题。移动载台3包含有用来承载一半导体晶片17的平面1。基台7可由石材或其他实心材质连接地面形成。固定台5以固接方式连接基台7。磁场9可用来维持载台3及由基台7与固定台5所组成的元件的空间，且可使载台3根据元件移动。磁场9可透过一组磁向相反的磁铁产生。当载台3移动(沿着方向11向右移动)时，此动作产生一应力15于基台7及固定台5所组成的物件上。当载台3朝方向11移动时，应力15会造成载台3移动的干扰及震动。平面1包含半导体晶片17于其上，且当载台3朝方向11移动时，半导体晶片17会经过一加工处理。当载台3移动时，透过固定曝光元件13可对半导体晶片17进行多种测量及微影成像操作。载台3朝方向11移动所产生的干扰及震动会影响半导体晶片17的定位，并于半导体晶片17上形成偏差、非精确读取及低解析等问题。
图2为根据另一公知技术的装置，其包含有位于固定基台27及载台3的间的平衡台25。多种公知方法利用位于平衡台25及基台27的间的阻力29，借以避免平衡台25及基台27的实际接触，以及载台3透过磁斥力9可于平衡台上方移动。当载台3移动(如沿方向21向右方移动)时，平衡台25沿着与方向21相反的方向31移动，以抵抗载台3的移动，并避免震动或干扰载台3动作。此装置需额外设置一悬浮且可移动的平衡台25于载台3及基台27的间。图2未显示载台3与平衡台25的尺寸重量比例(通常为1∶100)。换句话说，平衡台25质量较大，而承载半导体晶片17的载台3的直径可大于450mm。当半导体晶片17及载台3移动时，固定曝光元件13可用来对半导体晶片17进行一微影成像操作。
由上述可知，公知装置及方法会受到载台移动时所产生的震动、干扰，以及需增加质量较大的平衡台以抵抗载台的动作等缺失。
本发明实施例针对上述缺失提出解决方式。
发明内容
为克服上述现有技术的缺陷，本发明揭示一种装置，用来处理半导体晶片。该装置包含有一对载台，每一载台用来承载及处理一半导体晶片。当该装置处理半导体晶片时，该对载台可同步以反方向移动。因此，可省略用来抵抗载台移动的一可移动的平衡台。
本发明另揭示一种方法，用来处理半导体晶片。该方法包含有提供具有一对载台的一装置；配置一半导体晶片于每一载台；以及当以反方向同步移动该载台时，对每一半导体晶片同步进行一处理操作。
本发明的装置及方法不会受到载台移动时所产生的震动、干扰，且不需平衡台抵消载台的运动。
附图说明
图1为根据公知技术用来处理位于一移动载台的半导体晶片的一半导体处理装置的侧视图。
图2为根据公知技术用来处理位于一移动载台的半导体晶片的另一半导体处理装置的侧视图。
图3为根据本发明优选实施例的一半导体处理装置的侧视图且包含晶片位置及相关运动的平面图。
图4为根据本发明的一载台所接收的一优选半导体晶片的平面图。
图5为本发明的半导体晶片位于可移动晶片盘的示意图。
其中，附图标记说明如下：
公知技术
1    平面
3    载台
5    固定台
7    基台
9    磁场
11   方向
13   固定曝光元件
15   应力
17   半导体晶片
21   方向
25   平衡台
27   固定基台
29   阻力
31   方向
本发明
35   基台
37   固定载台
39   浮力
41   平面
45、47  方向
51   处理元件
53    光束
57    槽口
59    凸出
67    固定载台
77    槽口
55L、55R  图样
31L、31R、69L、69R、71L、71R  载台
43、43L、43R、73L、73R、75L、75R  半导体晶片
具体实施方式
本发明提供一系统及方法，用来制造半导体装置。此系统及方法涉及在一处理操作及一处理装置中，同时处理二个、四个或其他数量的半导体晶片。在一优选实施例中，一装置包含有相互平行且同平面置于晶片盘上的二半导体晶片。另一优选实施例同步处理四个晶片，且每一晶片包含有在一处理操作进行时，以反方向移动的晶片。
图3为根据本发明的一优选装置。图3揭示有配置于一半导体制造装置的一固定基台35上的一左载台31L及一右载台31R。一固定载台37固接基台35。半导体处理装置可为任一形态的半导体制造工具，且不限于测量及微影工具。根据多个实施例，半导体微影技术可为用于半导体装置成像的技术，例如利用光微影、电子束微影、利用激光或其他微影技术(如x-ray微影技术、紫外线微影、离子投射微影(ion projection lithography)或浸润式微影(immersion lithography)的紫外线成像工具的一步进机。根据其他实施例，半导体制造装置可为一测量工具用来测量晶片的特性。测量工具可用来测量表面形态、尺寸、表面缺陷(如微粒或其他不平整情况)、表面反射能力、厚度、镜面反射能力及一致性测量的至少其中之一。前述的微影及测量工具仅为优选实施方式，本发明的半导体制造装置并不限于此。
根据上述实施例，载台31L及31R透过浮力39悬浮或可移动于固定载台37及基台35上，其中浮力39可为气压、由磁性相斥的磁铁所产生的磁场或其他方式所产生用来支撑悬浮载台31L及31R的力，使载台31L及31R不会直接接触下方元件。基台35可由石材，如大理石或其他重量较重的材质形成。基台35可固定于地面或地板上。如图所示，载台31L及31R的上平面41为共平面，因此半导体晶片43L及43R亦为平行且共平面。载台31L及31R可为单一元件，其上半部可形成一晶片盘，用来承载晶片。根据另一优选实施例，载台可由多个元件组成，且用来承载晶片的晶片盘可为固定或连接于载台的一可分离元件，其中载台更连接一机械装置(未示于图中)，用来移动载台。多种公知材质可用来形成上述的载台及晶片盘。值得注意的是，在此所称的载台包含有晶片盘或其他用来承载半导体晶片的元件。载台31L及31R可为任何尺寸，以用来承载于半导体制造业的不同尺寸的晶片，如直径450mm的晶片。
每一载台可沿着上平面41所定义的平面移动。举例来说，载台31L可朝着左侧方向45或右侧方向47移动，以及载台31R亦可朝着左侧方向45或右侧方向47移动，且每一载台31L及31R可垂直移动或向平面内外侧移动。根据一优选实施方式，载台沿着一平面移动，使得上平面41与半导体晶片43L及43R保持共平面。根据另一优选实施例，当处理元件51同步处理半导体晶片43L及43R时，载台31L及31R可同时平面移动。
处理元件51可为用来进行半导体晶片微影、测量或其它处理操作的任一元件。处理元件51可包含多个移动部，但可视为一整合的处理元件，即当晶片于处理期间，载台相对处理元件51进行移动，反之亦然。此外，处理元件51亦可在晶片处理期间移动，如朝着晶片处理方向移动。
处理元件51可使用光束53，其可为处理元件51所产生或是由半导体晶片所反射的光、电子或其他电磁、辐射等，并可透过处理元件51侦测。处理元件51可指引光束53朝向半导体晶片43L及43R，且光束53包含有半导体晶片43L及43R所反射的光束，并由处理元件51感测以测量半导体晶片的特性。光束53可为可见波长及紫外线或电子束等，如使用于电子束导向直描成像技术。光束53可为固定，而处理元件51可导引光束53沿着晶片表面移动。处理元件51可包含曝光元件，并透过光束53成像晶片。处理元件51可包含一测量元件，透过导引不同光束于半导体晶片上，以测量晶片特性、厚度、表面特征、情况及缺陷等。以上说明仅为优选实施方式，本发明不以此为限。处理元件51可使用不同技术且包含多种装置，用来进行半导体晶片微影技术，如成像于半导体晶片431L及43及(或)测量半导体晶片431L及43的数量及(或)品质。
根据一实施例，当处理元件51对晶片进行处理时，晶片会以反方向移动。举例来说，载台31L朝方向45移动，而载台31R会同时朝反方向47移动。根据另一实施例，载台31L及31R可以相反方向但相同速度移动，以产生一载台的动量相同且相反于另一载台的动量，其中载台31L的质量与载台31R相同。在此实施例中，系统的净动量为零(如：净动量向量和为零)。
根据不同半导体处理操作，每一晶片的处理方向可与晶片的全晶片校准(global alignment)导向相同，例如：每一半导体晶片43L或43R可以全晶片校准为准，从上至下(或由左至右)处理，如晶片平面部分，通常为晶片底部。在此种方式下，晶片的裸片(die)以相同空间顺序处理。举例来说，每一连续裸片依全晶片校准导向的顺序处理。
请继续参考图3，图样55L及55R为半导体晶片43L及43R的平面图，其分别配置于载台31L及31R。每一半导体晶片包含有一槽口57，用于全晶片校准导向。根据另一实施例，一晶片平面部分可作为一全晶片校准导向。根据不同的实施方式及需求，槽口57可设计在半导体晶片的下方。根据一实施例，晶片可沿一特定方向(如槽口57的方向)作处理，例如晶片可从下至上被处理(如接近槽口57的一列裸片会优先被处理，而第二列的裸片会在下一次被处理，并以此类推)。此种依顺序移动的方式可用于处理操作，处理操作是关于步进重复操作或用来处理扫描、监控或测量晶片的操作。
晶片43L及43R示于图样55L及55R，并分别置于载台31L及31R上。根据一实施例，当半导体晶片43L沿坐标系统方向+X移动时，半导体晶片43R可能沿着相同坐标系统方向-X移动。同样地，当半导体晶片43L沿坐标系统方向+Y移动时，半导体晶片43R可能沿着相同坐标系统方向-Y移动。在此情况下，当承载半导体晶片43L及43R的载台在处理操作中以相反方向移动时，半导体晶片43L及43R的裸片以槽口57为准的相同空间顺序(例如从上至向或由右至左)被处理。
每一载台31L及31R相对固定基台35以反方向移动，但每一半导体晶片相对全晶片校准导向以相同方向移动。图4揭示在载台31的上平面41上的半导体晶片43。半导体晶片43包含全晶片校准导向。
根据另一实施例，装置及方法可包含二个以上的载台。图5为配置于相关载台的四个半导体晶片的平面图。在图5中，固定载台67固设于一半导体处理装置，且包含四个可移动的载台，用来在处理过程中，承载半导体晶片。此外，图5中的每一载台可与载台31L及31R的相同配置方式配置于固定载台67。相关装置及载台可悬置于固定基台67上，并以相同平面移动。
根据图5所示的实施方式，半导体晶片73L、73R、75L及75R可同时在对应的载台69L、69R、71L及71R上处理。半导体晶片73L、73R、75L及75R可经由成像、曝光、微影或其他测量操作处理。根据一实施例，每对载台包含有在处理期间相同且以反方向移动的载台。根据一优选实施例，同步移动载台的整体净动量向量为零。根据另一实施例，载台69L及69R的移动相同且相反方向，同样地，载台71L及71R的移动亦为相同且相反方向。上述的相同且相反方向涉及载台69L及69R的坐标系统，且代表当载台69L以一特定速度朝方向+Y移动时，载台69R以相同速度朝方向-Y移动。此情况亦会发生在载台71L以一特定速度朝方向+Y移动时，载台71R亦会以相同速度朝方向-Y移动，其中方向+Y及-Y是关于载台71L及71R的坐标系统。根据另一实施例，载台69L及69R可以相同速度且相反方向沿着+X及-X移动，同样地，载台71L及71R亦可以相同速度且相反方向沿着+X及-X移动。根据每对移动载台，其承载的晶片可同时沿着全晶片校准导向的方向移动，如槽口77。根据一优选实施例，由载台69L、69R、71L及71R所组成的系统的净动量向量为零，且每一晶片73L、73R、75L及75R在处理期间沿着全晶片校准导向的方向移动。
但以上所述者，仅为本发明的优选实施例而已，当不能以此限定本发明实施的范围，即大凡依本发明权利要求及发明说明内容所作的简单的等效变化与修饰，皆仍属本发明专利涵盖的范围内。举例来说，根据本发明，不同数量的晶片亦可透过本发明实施例中的载台同时移动并处理。
此外，在此所述的实施例及名称仅用来说明本发明的目的，并清楚了解本发明的特征及概念，但不限于本发明所列举的例及情况。另外，本发明所述的原则、观点及实施例可以等效的结构及功能实现。此等效的结构及功能包含目前所熟知的技术，但不限于此，任何能实现相同功能的结构或元件均属本发明的范畴。
本发明实施例是配合图示加以详细说明，且本发明的图示亦属本发明的范围。此外，本发明的关系名词如“低”、“高”、“水平”、“垂直”、“上方”、“下方”、“上”、“下”、“顶端”及“底部”可参考本发明实施例的说明或图示中所揭示的方向。关系名词是用来清楚且简易的描述本发明装置元件间的相对关系，并非限制本发明装置元件间的实际位置。此外，连接关系名词，例如“连接”及“互接”是指本发明装置元件透过中介结构元件，借以直接或间接地相互连接，除特别说明外，上述的连接关系可为固定或可移动的关系。
本发明的实施例仅用来说明本发明的精神，并非用来限制本发明的保护范围。此外，本发明的保护范围不限于本发明所列举的实施方式，本领域技术人员以等效的结构所作的变化亦属本发明的保护范围。

Claims (10)

1.一种处理半导体晶片的装置，该装置包含有：
一对载台，该对载台中的每一载台用来承载一对应的半导体晶片；以及当该装置对该半导体晶片进行一处理操作时，该对载台可同时以反方向移动。
2.如权利要求1项所述的装置，其中该装置包含有一微影工具；以及该处理操作包含有成像于该半导体晶片。
3.如权利要求1项所述的装置，其中该载台位于一固定基台上方，以及可相对于该固定基台以平面方式移动，该载台透过磁力排斥方式悬浮于该固定基台上方，以及该载台与该固定基台的间不具有可移动的一平衡台。
4.如权利要求1项所述的装置，其中该对载台可同时以反方向移动包含有该对载台的其中之一的动量变化相同且相反于另一载台的动量变化。
5.如权利要求1项所述的装置，其中该对载台可同时以反方向移动以产生一净动量向量和为零。
6.如权利要求1项所述的装置，更包含有一对进阶载台，该对进阶载台的每一进阶载台用来承载一对应的半导体晶片，以及当该装置对该半导体晶片进行该处理操作时，该对进阶载台可同时以反方向移动，可同时移动的该对载台及该对进阶载台可共同移动以产生一净动量向量和为零，该对载台可同时以反方向移动包含有该对载台的其中之一的动量变化相同且相反于另一载台的动量变化；以及该对进阶载台的其中之一的动量变化相同或相反于另一进阶载台的动量变化。
7.一种处理半导体晶片的方法，该方法包含有：
提供一装置，该装置包含有一对载台；
配置一半导体晶片于该对载台的每一载台；
当以反方向方式同时移动该对载台时，同时处理对应的该半导体晶片。
8.如权利要求7项所述的方法，其中该移动包含有平面移动该载台于一固定台，每一载台透过斥磁力位于该固定台上及不具有移动平衡质量于该载台与该固定台的间。
9.如权利要求7项所述的方法，其中同时移动包含有该对载台的其中之一的一动量变化相同且相反于另一载台的一动量变化。
10.如权利要求7项所述的方法，其中该装置更包含有一对进阶载台且该方法更包含有配置一半导体晶片于每一进阶载台；以及当以反方向同时移动该对进阶载台时，同时处理每一半导体晶片，该处理包含有对该半导体晶片进行一平面印刷操作或一测量操作，以及同时移动该对载台及同时移动该对进阶载台产生该载台及该进阶载台的一净动量向量和为零。
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