CN102016811A - 用于实现pcram设备的自参考读取操作的方法和装置 - Google Patents
用于实现pcram设备的自参考读取操作的方法和装置 Download PDFInfo
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- CN102016811A CN102016811A CN2009801155365A CN200980115536A CN102016811A CN 102016811 A CN102016811 A CN 102016811A CN 2009801155365 A CN2009801155365 A CN 2009801155365A CN 200980115536 A CN200980115536 A CN 200980115536A CN 102016811 A CN102016811 A CN 102016811A
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- voltage
- pce
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- read operation
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Pulse Circuits (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/112,454 | 2008-04-30 | ||
US12/112,454 US7660152B2 (en) | 2008-04-30 | 2008-04-30 | Method and apparatus for implementing self-referencing read operation for PCRAM devices |
PCT/US2009/041477 WO2009134664A2 (en) | 2008-04-30 | 2009-04-23 | Method and apparatus for implementing self-referencing read operation for pcram devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102016811A true CN102016811A (zh) | 2011-04-13 |
CN102016811B CN102016811B (zh) | 2014-08-06 |
Family
ID=41255693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980115536.5A Expired - Fee Related CN102016811B (zh) | 2008-04-30 | 2009-04-23 | 用于实现pcram设备的自参考读取操作的方法和装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7660152B2 (zh) |
CN (1) | CN102016811B (zh) |
TW (1) | TWI462098B (zh) |
WO (1) | WO2009134664A2 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104756193A (zh) * | 2013-01-14 | 2015-07-01 | 惠普发展公司,有限责任合伙企业 | 非易失性存储器阵列逻辑 |
CN104781886A (zh) * | 2012-12-19 | 2015-07-15 | 英特尔公司 | 用于读取可变电阻存储器元件的方法和装置 |
CN105931664A (zh) * | 2015-01-22 | 2016-09-07 | 南泰若股份有限公司 | 用于读取和编程1-r阻变元件阵列的方法 |
CN108717858A (zh) * | 2013-03-14 | 2018-10-30 | 美光科技公司 | 选择性自参考读取 |
CN112967740A (zh) * | 2021-02-02 | 2021-06-15 | 中国科学院上海微系统与信息技术研究所 | 非易失存储器超高速读出电路及读出方法 |
CN115527586A (zh) * | 2022-09-22 | 2022-12-27 | 中国科学院微电子研究所 | 一种rram的读取电路及读取方法 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7903447B2 (en) | 2006-12-13 | 2011-03-08 | Macronix International Co., Ltd. | Method, apparatus and computer program product for read before programming process on programmable resistive memory cell |
US7701759B2 (en) | 2007-02-05 | 2010-04-20 | Macronix International Co., Ltd. | Memory cell device and programming methods |
US8077505B2 (en) | 2008-05-07 | 2011-12-13 | Macronix International Co., Ltd. | Bipolar switching of phase change device |
JP2010009669A (ja) * | 2008-06-26 | 2010-01-14 | Toshiba Corp | 半導体記憶装置 |
US8134857B2 (en) | 2008-06-27 | 2012-03-13 | Macronix International Co., Ltd. | Methods for high speed reading operation of phase change memory and device employing same |
US7719913B2 (en) * | 2008-09-12 | 2010-05-18 | Macronix International Co., Ltd. | Sensing circuit for PCRAM applications |
US8036014B2 (en) | 2008-11-06 | 2011-10-11 | Macronix International Co., Ltd. | Phase change memory program method without over-reset |
US7869270B2 (en) * | 2008-12-29 | 2011-01-11 | Macronix International Co., Ltd. | Set algorithm for phase change memory cell |
US8093661B2 (en) * | 2009-01-07 | 2012-01-10 | Macronix International Co., Ltd. | Integrated circuit device with single crystal silicon on silicide and manufacturing method |
US8107283B2 (en) | 2009-01-12 | 2012-01-31 | Macronix International Co., Ltd. | Method for setting PCRAM devices |
US8064247B2 (en) | 2009-01-14 | 2011-11-22 | Macronix International Co., Ltd. | Rewritable memory device based on segregation/re-absorption |
US8406033B2 (en) | 2009-06-22 | 2013-03-26 | Macronix International Co., Ltd. | Memory device and method for sensing and fixing margin cells |
US7894254B2 (en) * | 2009-07-15 | 2011-02-22 | Macronix International Co., Ltd. | Refresh circuitry for phase change memory |
US8953360B2 (en) | 2009-12-10 | 2015-02-10 | Micron Technology, Inc. | Apparatus and method for reading a phase-change memory cell |
US8634235B2 (en) | 2010-06-25 | 2014-01-21 | Macronix International Co., Ltd. | Phase change memory coding |
US8233345B2 (en) | 2010-09-08 | 2012-07-31 | International Business Machines Corporation | Phase change memory cycle timer and method |
US8467238B2 (en) | 2010-11-15 | 2013-06-18 | Macronix International Co., Ltd. | Dynamic pulse operation for phase change memory |
US8374019B2 (en) | 2011-01-05 | 2013-02-12 | Macronix International Co., Ltd. | Phase change memory with fast write characteristics |
US8891293B2 (en) | 2011-06-23 | 2014-11-18 | Macronix International Co., Ltd. | High-endurance phase change memory devices and methods for operating the same |
US8681540B2 (en) * | 2011-08-29 | 2014-03-25 | Intel Corporation | Tile-level snapback detection through coupling capacitor in a cross point array |
US8687398B2 (en) | 2012-02-29 | 2014-04-01 | International Business Machines Corporation | Sense scheme for phase change material content addressable memory |
US9001550B2 (en) | 2012-04-27 | 2015-04-07 | Macronix International Co., Ltd. | Blocking current leakage in a memory array |
US20150187414A1 (en) * | 2012-07-27 | 2015-07-02 | Hewlett-Packard Development Company, L.P. | Dynamic sense circuitry |
US8964442B2 (en) | 2013-01-14 | 2015-02-24 | Macronix International Co., Ltd. | Integrated circuit 3D phase change memory array and manufacturing method |
US9779810B2 (en) | 2015-09-11 | 2017-10-03 | Macronix International Co., Ltd. | Adjustable writing circuit |
US10566052B2 (en) * | 2017-12-22 | 2020-02-18 | Micron Technology, Inc. | Auto-referenced memory cell read techniques |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4421995A (en) * | 1981-07-30 | 1983-12-20 | The United States Of America As Represented By The United States Department Of Energy | Timing discriminator using leading-edge extrapolation |
US4421996A (en) * | 1981-10-09 | 1983-12-20 | Advanced Micro Devices, Inc. | Sense amplification scheme for random access memory |
US7656682B1 (en) * | 2000-11-21 | 2010-02-02 | Intel Corporation | Electromagnetic noise reduction device |
US6590807B2 (en) | 2001-08-02 | 2003-07-08 | Intel Corporation | Method for reading a structural phase-change memory |
KR100546322B1 (ko) | 2003-03-27 | 2006-01-26 | 삼성전자주식회사 | 비휘발성 메모리와 휘발성 메모리로 선택적으로 동작할 수있는 상 변화 메모리 장치 및 상 변화 메모리 장치의 동작방법 |
EP1511042B1 (en) | 2003-08-27 | 2012-12-05 | STMicroelectronics Srl | Phase-change memory device with biasing of deselected bit lines |
KR100618824B1 (ko) * | 2004-05-08 | 2006-08-31 | 삼성전자주식회사 | 상 변화 메모리 장치의 전류 펄스 폭을 제어하는 구동회로 및 프로그래밍 방법 |
ITMI20042462A1 (it) * | 2004-12-23 | 2005-03-23 | St Microelectronics Srl | Memoria ausiliare |
US7259982B2 (en) | 2005-01-05 | 2007-08-21 | Intel Corporation | Reading phase change memories to reduce read disturbs |
JP4273087B2 (ja) * | 2005-02-08 | 2009-06-03 | エルピーダメモリ株式会社 | 半導体記憶装置およびその書込み方法 |
US7495944B2 (en) | 2005-03-30 | 2009-02-24 | Ovonyx, Inc. | Reading phase change memories |
US7280390B2 (en) | 2005-04-14 | 2007-10-09 | Ovonyx, Inc. | Reading phase change memories without triggering reset cell threshold devices |
-
2008
- 2008-04-30 US US12/112,454 patent/US7660152B2/en active Active
-
2009
- 2009-04-23 WO PCT/US2009/041477 patent/WO2009134664A2/en active Application Filing
- 2009-04-23 CN CN200980115536.5A patent/CN102016811B/zh not_active Expired - Fee Related
- 2009-04-27 TW TW098113933A patent/TWI462098B/zh active
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104781886B (zh) * | 2012-12-19 | 2017-08-01 | 英特尔公司 | 用于读取可变电阻存储器元件的方法和装置 |
CN104781886A (zh) * | 2012-12-19 | 2015-07-15 | 英特尔公司 | 用于读取可变电阻存储器元件的方法和装置 |
CN104756193B (zh) * | 2013-01-14 | 2018-11-06 | 慧与发展有限责任合伙企业 | 非易失性存储器阵列逻辑 |
US9846644B2 (en) | 2013-01-14 | 2017-12-19 | Hewlett Packard Enterprise Development Lp | Nonvolatile memory array logic |
CN104756193A (zh) * | 2013-01-14 | 2015-07-01 | 惠普发展公司,有限责任合伙企业 | 非易失性存储器阵列逻辑 |
CN108717858A (zh) * | 2013-03-14 | 2018-10-30 | 美光科技公司 | 选择性自参考读取 |
US11379286B2 (en) | 2013-03-14 | 2022-07-05 | Ovonyx Memory Technology, Llc | Selective reading of memory with improved accuracy |
CN108717858B (zh) * | 2013-03-14 | 2023-04-18 | 美光科技公司 | 选择性自参考读取 |
US11789796B2 (en) | 2013-03-14 | 2023-10-17 | Ovonyx Memory Technology, Llc | Selective reading of memory with improved accuracy |
CN105931664A (zh) * | 2015-01-22 | 2016-09-07 | 南泰若股份有限公司 | 用于读取和编程1-r阻变元件阵列的方法 |
CN105931664B (zh) * | 2015-01-22 | 2020-09-25 | 南泰若股份有限公司 | 用于读取和编程1-r阻变元件阵列的方法 |
CN112967740A (zh) * | 2021-02-02 | 2021-06-15 | 中国科学院上海微系统与信息技术研究所 | 非易失存储器超高速读出电路及读出方法 |
CN115527586A (zh) * | 2022-09-22 | 2022-12-27 | 中国科学院微电子研究所 | 一种rram的读取电路及读取方法 |
CN115527586B (zh) * | 2022-09-22 | 2023-03-10 | 中国科学院微电子研究所 | 一种rram的读取电路及读取方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090273968A1 (en) | 2009-11-05 |
WO2009134664A2 (en) | 2009-11-05 |
TW201003654A (en) | 2010-01-16 |
WO2009134664A3 (en) | 2009-12-30 |
US7660152B2 (en) | 2010-02-09 |
TWI462098B (zh) | 2014-11-21 |
CN102016811B (zh) | 2014-08-06 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171115 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171115 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140806 |
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