CN101959025B - 图像捕获装置和放射线图像捕获系统 - Google Patents

图像捕获装置和放射线图像捕获系统 Download PDF

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Publication number
CN101959025B
CN101959025B CN2010102280600A CN201010228060A CN101959025B CN 101959025 B CN101959025 B CN 101959025B CN 2010102280600 A CN2010102280600 A CN 2010102280600A CN 201010228060 A CN201010228060 A CN 201010228060A CN 101959025 B CN101959025 B CN 101959025B
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China
Prior art keywords
tft
film transistor
image capture
thin
capture apparatus
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Expired - Fee Related
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CN2010102280600A
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English (en)
Chinese (zh)
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CN101959025A (zh
Inventor
渡边实
望月千织
石井孝昌
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Canon Inc
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Canon Inc
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • H04N23/667Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
CN2010102280600A 2009-07-13 2010-07-08 图像捕获装置和放射线图像捕获系统 Expired - Fee Related CN101959025B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-165049 2009-07-13
JP2009165049A JP5400507B2 (ja) 2009-07-13 2009-07-13 撮像装置及び放射線撮像システム

Publications (2)

Publication Number Publication Date
CN101959025A CN101959025A (zh) 2011-01-26
CN101959025B true CN101959025B (zh) 2013-05-22

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US (1) US20110006191A1 (https=)
JP (1) JP5400507B2 (https=)
CN (1) CN101959025B (https=)

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* Cited by examiner, † Cited by third party
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JP2011238897A (ja) 2010-04-13 2011-11-24 Canon Inc 検出装置及びその製造方法並びに検出システム
US8450673B2 (en) * 2010-10-29 2013-05-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Pixel circuit, imaging integrated circuit, and method for image information acquisition
JPWO2013015016A1 (ja) * 2011-07-27 2015-02-23 富士フイルム株式会社 放射線撮影装置
JP2013069864A (ja) * 2011-09-22 2013-04-18 Canon Inc 検出装置及び検出システム
KR101463651B1 (ko) * 2011-10-12 2014-11-20 엘지디스플레이 주식회사 유기발광 표시장치
KR101911314B1 (ko) * 2012-03-30 2018-10-24 삼성전자주식회사 엑스선 검출기
KR20170029681A (ko) * 2015-09-07 2017-03-16 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조방법
CN107507844A (zh) * 2017-06-06 2017-12-22 上海奕瑞光电子科技有限公司 柔性x射线成像传感器及其制备方法
EP3422413A1 (en) * 2017-06-26 2019-01-02 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Photodetector array and method of manufacturing the same, as well as an imaging device including the photodetector array

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Also Published As

Publication number Publication date
JP2011023426A (ja) 2011-02-03
CN101959025A (zh) 2011-01-26
US20110006191A1 (en) 2011-01-13
JP5400507B2 (ja) 2014-01-29

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