CN101930945A - Bcd工艺中自对准沟道的dmos的制备方法 - Google Patents
Bcd工艺中自对准沟道的dmos的制备方法 Download PDFInfo
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CN101930945A true CN101930945A (zh) | 2010-12-29 |
CN101930945B CN101930945B (zh) | 2013-10-23 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377131A (zh) * | 2013-08-12 | 2015-02-25 | 无锡华润上华科技有限公司 | 一种高压器件的低压区的制备方法 |
CN111293114A (zh) * | 2020-03-13 | 2020-06-16 | 吴健 | 源漏完全硅金属化的场效应晶体管及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6157062A (en) * | 1998-04-13 | 2000-12-05 | Texas Instruments Incorporated | Integrating dual supply voltage by removing the drain extender implant from the high voltage device |
US20030001206A1 (en) * | 2001-06-27 | 2003-01-02 | Takaaki Negoro | Semiconductor device and method for fabricating such device |
CN1638088A (zh) * | 2003-12-26 | 2005-07-13 | 恩益禧电子股份有限公司 | 半导体器件的制造方法 |
CN101226962A (zh) * | 2008-02-22 | 2008-07-23 | 谭健 | Hvmos及集成hvmos与cmos的半导体器件 |
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- 2009-06-18 CN CN 200910057451 patent/CN101930945B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6157062A (en) * | 1998-04-13 | 2000-12-05 | Texas Instruments Incorporated | Integrating dual supply voltage by removing the drain extender implant from the high voltage device |
US20030001206A1 (en) * | 2001-06-27 | 2003-01-02 | Takaaki Negoro | Semiconductor device and method for fabricating such device |
CN1638088A (zh) * | 2003-12-26 | 2005-07-13 | 恩益禧电子股份有限公司 | 半导体器件的制造方法 |
CN101226962A (zh) * | 2008-02-22 | 2008-07-23 | 谭健 | Hvmos及集成hvmos与cmos的半导体器件 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377131A (zh) * | 2013-08-12 | 2015-02-25 | 无锡华润上华科技有限公司 | 一种高压器件的低压区的制备方法 |
CN104377131B (zh) * | 2013-08-12 | 2017-04-12 | 无锡华润上华科技有限公司 | 一种高压器件的低压区的制备方法 |
CN111293114A (zh) * | 2020-03-13 | 2020-06-16 | 吴健 | 源漏完全硅金属化的场效应晶体管及其制造方法 |
CN111293114B (zh) * | 2020-03-13 | 2022-07-01 | 上海晶丰明源半导体股份有限公司 | 源漏完全硅金属化的场效应晶体管及其制造方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |