CN111293114B - 源漏完全硅金属化的场效应晶体管及其制造方法 - Google Patents
源漏完全硅金属化的场效应晶体管及其制造方法 Download PDFInfo
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- CN111293114B CN111293114B CN202010174767.1A CN202010174767A CN111293114B CN 111293114 B CN111293114 B CN 111293114B CN 202010174767 A CN202010174767 A CN 202010174767A CN 111293114 B CN111293114 B CN 111293114B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 26
- 229910052710 silicon Inorganic materials 0.000 title abstract description 26
- 239000010703 silicon Substances 0.000 title abstract description 26
- 238000002353 field-effect transistor method Methods 0.000 title description 2
- 230000005669 field effect Effects 0.000 claims abstract description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 83
- 229910021332 silicide Inorganic materials 0.000 claims description 80
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 80
- 230000008021 deposition Effects 0.000 claims description 79
- 229920005591 polysilicon Polymers 0.000 claims description 66
- 238000002955 isolation Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 55
- 238000010586 diagram Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
Abstract
Description
Claims (8)
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CN202010174767.1A CN111293114B (zh) | 2020-03-13 | 2020-03-13 | 源漏完全硅金属化的场效应晶体管及其制造方法 |
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CN202010174767.1A CN111293114B (zh) | 2020-03-13 | 2020-03-13 | 源漏完全硅金属化的场效应晶体管及其制造方法 |
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CN111293114A CN111293114A (zh) | 2020-06-16 |
CN111293114B true CN111293114B (zh) | 2022-07-01 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1354522A (zh) * | 2000-10-11 | 2002-06-19 | 株式会社东芝 | 半导体器件及其制造方法 |
CN101842902A (zh) * | 2007-10-26 | 2010-09-22 | HVVi半导体股份有限公司 | 半导体结构及其制造方法 |
CN101930945A (zh) * | 2009-06-18 | 2010-12-29 | 上海华虹Nec电子有限公司 | Bcd工艺中自对准沟道的dmos的制备方法 |
CN103594469A (zh) * | 2012-08-17 | 2014-02-19 | 台湾积体电路制造股份有限公司 | 垂直功率mosfet晶体管及其形成方法 |
US20140131735A1 (en) * | 2012-11-15 | 2014-05-15 | Globalfoundries Inc. | Source and drain doping using doped raised source and drain regions |
-
2020
- 2020-03-13 CN CN202010174767.1A patent/CN111293114B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1354522A (zh) * | 2000-10-11 | 2002-06-19 | 株式会社东芝 | 半导体器件及其制造方法 |
CN101842902A (zh) * | 2007-10-26 | 2010-09-22 | HVVi半导体股份有限公司 | 半导体结构及其制造方法 |
CN101930945A (zh) * | 2009-06-18 | 2010-12-29 | 上海华虹Nec电子有限公司 | Bcd工艺中自对准沟道的dmos的制备方法 |
CN103594469A (zh) * | 2012-08-17 | 2014-02-19 | 台湾积体电路制造股份有限公司 | 垂直功率mosfet晶体管及其形成方法 |
US20140131735A1 (en) * | 2012-11-15 | 2014-05-15 | Globalfoundries Inc. | Source and drain doping using doped raised source and drain regions |
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Effective date of registration: 20211207 Address after: 201306 building C, No. 888, Huanhu West 2nd Road, Lingang New District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Applicant after: Lilaito semiconductor (Shanghai) Co.,Ltd. Address before: 200052 No. 900, Changning District, Shanghai, West Yan'an Road Applicant before: Wu Jian |
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Effective date of registration: 20220524 Address after: 201206 unit 102, floor 9-12, No.3, Lane 5005, Shenjiang Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Applicant after: SHANGHAI BRIGHT POWER SEMICONDUCTOR Co.,Ltd. Address before: 201306 building C, No. 888, Huanhu West 2nd Road, Lingang New District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Applicant before: Lilaito semiconductor (Shanghai) Co.,Ltd. |
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Denomination of invention: Source-drain fully silicon metallized field effect transistor and its manufacturing method Effective date of registration: 20220829 Granted publication date: 20220701 Pledgee: CITIC Bank Limited by Share Ltd. Shanghai branch Pledgor: SHANGHAI BRIGHT POWER SEMICONDUCTOR Co.,Ltd. Registration number: Y2022310000210 |
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