CN101661888B - 半导体器件中源漏注入结构的制备方法 - Google Patents
半导体器件中源漏注入结构的制备方法 Download PDFInfo
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- CN101661888B CN101661888B CN2008100437323A CN200810043732A CN101661888B CN 101661888 B CN101661888 B CN 101661888B CN 2008100437323 A CN2008100437323 A CN 2008100437323A CN 200810043732 A CN200810043732 A CN 200810043732A CN 101661888 B CN101661888 B CN 101661888B
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CN101661888A CN101661888A (zh) | 2010-03-03 |
CN101661888B true CN101661888B (zh) | 2011-06-01 |
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Families Citing this family (4)
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WO2012096010A1 (ja) * | 2011-01-14 | 2012-07-19 | 三菱電機株式会社 | 半導体装置の製造方法 |
CN103632943A (zh) * | 2012-08-24 | 2014-03-12 | 中国科学院微电子研究所 | 半导体器件制造方法 |
CN105047566B (zh) * | 2015-08-11 | 2018-06-22 | 上海华力微电子有限公司 | 抑制反短沟道效应的方法及nmos器件制备方法 |
CN113140464A (zh) * | 2021-06-22 | 2021-07-20 | 晶芯成(北京)科技有限公司 | 半导体器件及其制备方法 |
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JP2003124309A (ja) * | 2001-10-09 | 2003-04-25 | Macronix Internatl Co Ltd | 銅デュアルダマシンプロセスにおけるビア及びトレンチの製造方法 |
US7083898B1 (en) * | 2005-07-07 | 2006-08-01 | International Business Machines Corporation | Method for performing chemical shrink process over BARC (bottom anti-reflective coating) |
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JP2003124309A (ja) * | 2001-10-09 | 2003-04-25 | Macronix Internatl Co Ltd | 銅デュアルダマシンプロセスにおけるビア及びトレンチの製造方法 |
US7083898B1 (en) * | 2005-07-07 | 2006-08-01 | International Business Machines Corporation | Method for performing chemical shrink process over BARC (bottom anti-reflective coating) |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140109 |
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Effective date of registration: 20140109 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |