CN101928982A - 双室结构碳化硅晶体生长装置 - Google Patents
双室结构碳化硅晶体生长装置 Download PDFInfo
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- CN101928982A CN101928982A CN2009100535689A CN200910053568A CN101928982A CN 101928982 A CN101928982 A CN 101928982A CN 2009100535689 A CN2009100535689 A CN 2009100535689A CN 200910053568 A CN200910053568 A CN 200910053568A CN 101928982 A CN101928982 A CN 101928982A
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- crystal growing
- silicon carbide
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- 239000013078 crystal Substances 0.000 title claims abstract description 87
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 46
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 239000000463 material Substances 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 240000003936 Plumbago auriculata Species 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 18
- 239000012535 impurity Substances 0.000 abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 9
- 239000011810 insulating material Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 239000003344 environmental pollutant Substances 0.000 abstract 1
- 231100000719 pollutant Toxicity 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 241000209456 Plumbago Species 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000000802 nitrating effect Effects 0.000 description 1
- 230000004223 radioprotective effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims (8)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100535689A CN101928982B (zh) | 2009-06-22 | 2009-06-22 | 双室结构碳化硅晶体生长装置 |
US13/379,608 US9228275B2 (en) | 2009-06-22 | 2010-06-22 | Apparatus with two-chamber structure for growing silicon carbide crystals |
PCT/CN2010/074204 WO2010149017A1 (zh) | 2009-06-22 | 2010-06-22 | 双室结构碳化硅晶体生长装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100535689A CN101928982B (zh) | 2009-06-22 | 2009-06-22 | 双室结构碳化硅晶体生长装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101928982A true CN101928982A (zh) | 2010-12-29 |
CN101928982B CN101928982B (zh) | 2011-10-05 |
Family
ID=43368396
Family Applications (1)
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CN2009100535689A Active CN101928982B (zh) | 2009-06-22 | 2009-06-22 | 双室结构碳化硅晶体生长装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9228275B2 (zh) |
CN (1) | CN101928982B (zh) |
WO (1) | WO2010149017A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104775149A (zh) * | 2015-05-05 | 2015-07-15 | 山东天岳先进材料科技有限公司 | 一种生长高纯半绝缘碳化硅单晶的方法及装置 |
CN104862780A (zh) * | 2015-05-05 | 2015-08-26 | 山东天岳先进材料科技有限公司 | 一种制备无色碳化硅晶体的方法及装置 |
CN108463580A (zh) * | 2015-09-24 | 2018-08-28 | 帕里杜斯有限公司 | 气相沉积装置以及使用高纯度聚合物衍生的碳化硅的技术 |
CN110528079A (zh) * | 2019-08-20 | 2019-12-03 | 山东天岳先进材料科技有限公司 | 一种在真空状态下对测温镜片进行更换的装置及其应用 |
CN112663136A (zh) * | 2020-12-02 | 2021-04-16 | 中电化合物半导体有限公司 | 碳化硅晶体生长方法及生长装置 |
CN112725887A (zh) * | 2020-12-23 | 2021-04-30 | 山东天岳先进科技股份有限公司 | 一种碳化硅粉投料方法及装置与应用 |
CN114411245A (zh) * | 2021-12-29 | 2022-04-29 | 北京天科合达半导体股份有限公司 | 一种碳化硅单晶的生长装置及生长方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108707966A (zh) * | 2018-08-27 | 2018-10-26 | 山东大学 | 一种低氮含量SiC单晶生长装置及其应用 |
DE102021123991B4 (de) * | 2021-09-16 | 2024-05-29 | Pva Tepla Ag | PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5441011A (en) * | 1993-03-16 | 1995-08-15 | Nippon Steel Corporation | Sublimation growth of single crystal SiC |
JP3384242B2 (ja) | 1996-03-29 | 2003-03-10 | 株式会社豊田中央研究所 | 炭化珪素単結晶の製造方法 |
CN1124371C (zh) * | 2000-06-07 | 2003-10-15 | 中国科学院半导体研究所 | 一种高温碳化硅半导体材料制造装置 |
CN1247831C (zh) * | 2003-11-14 | 2006-03-29 | 中国科学院物理研究所 | 一种碳化硅晶体生长装置 |
JP2007039785A (ja) * | 2005-07-04 | 2007-02-15 | Seiko Epson Corp | 真空蒸着装置及び電気光学装置の製造方法 |
CN100460571C (zh) * | 2006-12-16 | 2009-02-11 | 杭州慧翔电液技术开发有限公司 | 直线导轨式坩埚提升装置 |
CN101144179B (zh) * | 2007-07-17 | 2010-08-11 | 吴晟 | 一种用于以物理气相传输沉淀法生长单晶用的单晶生长设备 |
CN201433250Y (zh) * | 2009-06-22 | 2010-03-31 | 中国科学院上海硅酸盐研究所 | 晶体生长炉 |
-
2009
- 2009-06-22 CN CN2009100535689A patent/CN101928982B/zh active Active
-
2010
- 2010-06-22 US US13/379,608 patent/US9228275B2/en not_active Expired - Fee Related
- 2010-06-22 WO PCT/CN2010/074204 patent/WO2010149017A1/zh active Application Filing
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104775149A (zh) * | 2015-05-05 | 2015-07-15 | 山东天岳先进材料科技有限公司 | 一种生长高纯半绝缘碳化硅单晶的方法及装置 |
CN104862780A (zh) * | 2015-05-05 | 2015-08-26 | 山东天岳先进材料科技有限公司 | 一种制备无色碳化硅晶体的方法及装置 |
CN104862780B (zh) * | 2015-05-05 | 2017-11-14 | 山东天岳先进材料科技有限公司 | 一种制备无色碳化硅晶体的方法及装置 |
CN108463580A (zh) * | 2015-09-24 | 2018-08-28 | 帕里杜斯有限公司 | 气相沉积装置以及使用高纯度聚合物衍生的碳化硅的技术 |
TWI719164B (zh) * | 2015-09-24 | 2021-02-21 | 美商佩利達斯股份有限公司 | 使用得自聚合物之高純度碳化矽之氣相沉積設備與技術 |
CN108463580B (zh) * | 2015-09-24 | 2021-11-12 | 帕里杜斯有限公司 | 气相沉积装置以及使用高纯度聚合物衍生的碳化硅的技术 |
TWI770769B (zh) * | 2015-09-24 | 2022-07-11 | 美商佩利達斯股份有限公司 | 使用得自聚合物之高純度碳化矽之氣相沉積設備與技術 |
TWI820738B (zh) * | 2015-09-24 | 2023-11-01 | 美商佩利達斯股份有限公司 | 使用得自聚合物之高純度碳化矽之氣相沉積設備與技術 |
CN110528079A (zh) * | 2019-08-20 | 2019-12-03 | 山东天岳先进材料科技有限公司 | 一种在真空状态下对测温镜片进行更换的装置及其应用 |
CN112663136A (zh) * | 2020-12-02 | 2021-04-16 | 中电化合物半导体有限公司 | 碳化硅晶体生长方法及生长装置 |
CN112725887A (zh) * | 2020-12-23 | 2021-04-30 | 山东天岳先进科技股份有限公司 | 一种碳化硅粉投料方法及装置与应用 |
CN114411245A (zh) * | 2021-12-29 | 2022-04-29 | 北京天科合达半导体股份有限公司 | 一种碳化硅单晶的生长装置及生长方法 |
Also Published As
Publication number | Publication date |
---|---|
US20120192790A1 (en) | 2012-08-02 |
CN101928982B (zh) | 2011-10-05 |
US9228275B2 (en) | 2016-01-05 |
WO2010149017A1 (zh) | 2010-12-29 |
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Owner name: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF Effective date: 20120709 Owner name: MEDIUM TEST BASE OF SHANGHAI INSTITUTE OF CERAMICS Free format text: FORMER OWNER: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCE Effective date: 20120709 |
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Effective date of registration: 20120709 Address after: 201800 Shanghai City, north of the city of Jiading District Road No. 215 Co-patentee after: Shanghai Silicates Institute, the Chinese Academy of Sciences Patentee after: Research and Design center, Shanghai Institute of Ceramics Address before: 1295 Dingxi Road, Shanghai, No. 200050 Patentee before: Shanghai Silicates Institute, the Chinese Academy of Sciences |
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Effective date of registration: 20201127 Address after: No. 1814, Lianshan District, Shanghai Patentee after: SHANGHAI SHENHE THERMO-MAGNETICS ELECTRONICS Co.,Ltd. Address before: 201800 No. 215 Chengbei Road, Shanghai, Jiading District Patentee before: R&D CENTER OF SHANGHAI INSTITUTE OF CERAMICS Patentee before: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES |
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Effective date of registration: 20210916 Address after: 244000 Xihu 3rd road, Tongling Economic Development Zone, Anhui Province Patentee after: Anhui microchip Changjiang semiconductor materials Co.,Ltd. Address before: No. 181, Shanlian Road, Baoshan District, Shanghai 200444 Patentee before: SHANGHAI SHENHE THERMO-MAGNETICS ELECTRONICS Co.,Ltd. |
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