CN101867157A - 多波长半导体激光装置 - Google Patents
多波长半导体激光装置 Download PDFInfo
- Publication number
- CN101867157A CN101867157A CN201010165214A CN201010165214A CN101867157A CN 101867157 A CN101867157 A CN 101867157A CN 201010165214 A CN201010165214 A CN 201010165214A CN 201010165214 A CN201010165214 A CN 201010165214A CN 101867157 A CN101867157 A CN 101867157A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- laser device
- stem
- submount
- wavelength semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009098949A JP2010251502A (ja) | 2009-04-15 | 2009-04-15 | 多波長半導体レーザ装置 |
| JP2009-098949 | 2009-04-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101867157A true CN101867157A (zh) | 2010-10-20 |
Family
ID=42958764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010165214A Pending CN101867157A (zh) | 2009-04-15 | 2010-04-14 | 多波长半导体激光装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8322879B2 (enExample) |
| JP (1) | JP2010251502A (enExample) |
| CN (1) | CN101867157A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104852274A (zh) * | 2014-02-13 | 2015-08-19 | 三菱电机株式会社 | 半导体激光光源 |
| CN112582874A (zh) * | 2019-09-29 | 2021-03-30 | 山东华光光电子股份有限公司 | 一种激光光灸用复合激光器及封装方法 |
| WO2021098841A1 (zh) * | 2019-11-21 | 2021-05-27 | 深圳市中光工业技术研究院 | 激光光源 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2477458B (en) * | 2009-06-09 | 2012-03-07 | Mitsubishi Electric Corp | Multi-wavelength semiconductor laser device |
| JP5522977B2 (ja) * | 2009-06-09 | 2014-06-18 | 三菱電機株式会社 | 多波長半導体レーザ装置 |
| US9927611B2 (en) * | 2010-03-29 | 2018-03-27 | Soraa Laser Diode, Inc. | Wearable laser based display method and system |
| CN204496106U (zh) | 2013-10-11 | 2015-07-22 | 天空激光二极管有限公司 | 可佩戴式装置 |
| JP6722474B2 (ja) * | 2016-03-09 | 2020-07-15 | フォトンリサーチ株式会社 | マルチ波長レーザ光源モジュール、及び合波器付きマルチ波長レーザ光源モジュール |
| DE102018009384B4 (de) * | 2018-11-30 | 2022-01-20 | Diehl Defence Gmbh & Co. Kg | Laser-Detektorsystem |
| DE102018009383A1 (de) * | 2018-11-30 | 2020-06-04 | Diehl Defence Gmbh & Co. Kg | Verfahren zum Herstellen eines Multistrahllasers |
| CN114731021A (zh) * | 2019-09-30 | 2022-07-08 | 奥斯兰姆奥普托半导体股份有限两合公司 | 激光封装及具有激光封装的系统 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5648977A (en) * | 1994-10-11 | 1997-07-15 | Mitsubishi Denki Kabushiki Kaisha | Laser array device and method of fabricating the device |
| US5668822A (en) * | 1994-08-05 | 1997-09-16 | Mitsubishi Denki Kabushiki Kaisha | Integrated semiconductor laser device |
| JP3240794B2 (ja) * | 1993-11-25 | 2001-12-25 | 株式会社デンソー | 半導体レーザ |
| CN1677781A (zh) * | 2004-03-30 | 2005-10-05 | 三洋电机株式会社 | 半导体激光装置 |
| CN1838494A (zh) * | 2005-03-25 | 2006-09-27 | 三洋电机株式会社 | 半导体激光装置和光学拾取装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63287085A (ja) * | 1987-05-19 | 1988-11-24 | Omron Tateisi Electronics Co | マルチビ−ム光源 |
| JPH11186669A (ja) | 1997-12-22 | 1999-07-09 | Victor Co Of Japan Ltd | 半導体レーザ装置 |
| JPH11186658A (ja) * | 1997-12-24 | 1999-07-09 | Victor Co Of Japan Ltd | 半導体レーザ装置 |
| JP2006059471A (ja) | 2004-08-20 | 2006-03-02 | Sony Corp | レーザ出射装置及び光学ヘッド |
| JP2007115724A (ja) * | 2005-10-18 | 2007-05-10 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
-
2009
- 2009-04-15 JP JP2009098949A patent/JP2010251502A/ja active Pending
-
2010
- 2010-04-02 US US12/753,136 patent/US8322879B2/en active Active
- 2010-04-14 CN CN201010165214A patent/CN101867157A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3240794B2 (ja) * | 1993-11-25 | 2001-12-25 | 株式会社デンソー | 半導体レーザ |
| US5668822A (en) * | 1994-08-05 | 1997-09-16 | Mitsubishi Denki Kabushiki Kaisha | Integrated semiconductor laser device |
| US5648977A (en) * | 1994-10-11 | 1997-07-15 | Mitsubishi Denki Kabushiki Kaisha | Laser array device and method of fabricating the device |
| CN1677781A (zh) * | 2004-03-30 | 2005-10-05 | 三洋电机株式会社 | 半导体激光装置 |
| CN1838494A (zh) * | 2005-03-25 | 2006-09-27 | 三洋电机株式会社 | 半导体激光装置和光学拾取装置 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104852274A (zh) * | 2014-02-13 | 2015-08-19 | 三菱电机株式会社 | 半导体激光光源 |
| CN104852274B (zh) * | 2014-02-13 | 2018-11-27 | 三菱电机株式会社 | 半导体激光光源 |
| CN112582874A (zh) * | 2019-09-29 | 2021-03-30 | 山东华光光电子股份有限公司 | 一种激光光灸用复合激光器及封装方法 |
| CN112582874B (zh) * | 2019-09-29 | 2021-10-01 | 山东华光光电子股份有限公司 | 一种激光光灸用复合激光器及封装方法 |
| WO2021098841A1 (zh) * | 2019-11-21 | 2021-05-27 | 深圳市中光工业技术研究院 | 激光光源 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8322879B2 (en) | 2012-12-04 |
| JP2010251502A (ja) | 2010-11-04 |
| US20100265702A1 (en) | 2010-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101867157A (zh) | 多波长半导体激光装置 | |
| JP5522977B2 (ja) | 多波長半導体レーザ装置 | |
| JP4711838B2 (ja) | 多波長半導体レーザ装置 | |
| US8619825B2 (en) | Light-emitting device having a thermal conductive member with wiring function and method of manufacturing the same | |
| JP4930322B2 (ja) | 半導体発光素子、光ピックアップ装置および情報記録再生装置 | |
| CN100502177C (zh) | 双光束半导体激光器 | |
| US8275013B2 (en) | Semiconductor laser device and method of manufacturing the same | |
| JP4288620B2 (ja) | 半導体発光素子およびその製造方法 | |
| CN102195235A (zh) | 发光装置以及采用该发光装置的光学设备 | |
| JP2011018761A (ja) | 半導体レーザ装置、半導体レーザ装置の製造方法及び光ピックアップ並びに光学装置 | |
| JP5799727B2 (ja) | 多波長半導体レーザ装置及び多波長半導体レーザ装置の製造方法 | |
| JP5227666B2 (ja) | 半導体レーザ装置およびその製造方法 | |
| JP2013016585A (ja) | 多波長半導体レーザ装置 | |
| US20110051773A1 (en) | Semiconductor laser device | |
| JP2007311680A (ja) | 半導体レーザ装置 | |
| JP2011199137A (ja) | 多波長半導体レーザ装置 | |
| GB2477458A (en) | Multi-wavelength semiconductor laser device | |
| JP2013080781A (ja) | 多波長半導体レーザ装置 | |
| JP2010016095A (ja) | 半導体レーザ装置およびその製造方法 | |
| JP2008187082A (ja) | レーザ装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20101020 |