CN101867157A - 多波长半导体激光装置 - Google Patents

多波长半导体激光装置 Download PDF

Info

Publication number
CN101867157A
CN101867157A CN201010165214A CN201010165214A CN101867157A CN 101867157 A CN101867157 A CN 101867157A CN 201010165214 A CN201010165214 A CN 201010165214A CN 201010165214 A CN201010165214 A CN 201010165214A CN 101867157 A CN101867157 A CN 101867157A
Authority
CN
China
Prior art keywords
semiconductor laser
laser device
stem
submount
wavelength semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201010165214A
Other languages
English (en)
Chinese (zh)
Inventor
阿部真司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN101867157A publication Critical patent/CN101867157A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN201010165214A 2009-04-15 2010-04-14 多波长半导体激光装置 Pending CN101867157A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009098949A JP2010251502A (ja) 2009-04-15 2009-04-15 多波長半導体レーザ装置
JP2009-098949 2009-04-15

Publications (1)

Publication Number Publication Date
CN101867157A true CN101867157A (zh) 2010-10-20

Family

ID=42958764

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010165214A Pending CN101867157A (zh) 2009-04-15 2010-04-14 多波长半导体激光装置

Country Status (3)

Country Link
US (1) US8322879B2 (enExample)
JP (1) JP2010251502A (enExample)
CN (1) CN101867157A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104852274A (zh) * 2014-02-13 2015-08-19 三菱电机株式会社 半导体激光光源
CN112582874A (zh) * 2019-09-29 2021-03-30 山东华光光电子股份有限公司 一种激光光灸用复合激光器及封装方法
WO2021098841A1 (zh) * 2019-11-21 2021-05-27 深圳市中光工业技术研究院 激光光源

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2477458B (en) * 2009-06-09 2012-03-07 Mitsubishi Electric Corp Multi-wavelength semiconductor laser device
JP5522977B2 (ja) * 2009-06-09 2014-06-18 三菱電機株式会社 多波長半導体レーザ装置
US9927611B2 (en) * 2010-03-29 2018-03-27 Soraa Laser Diode, Inc. Wearable laser based display method and system
CN204496106U (zh) 2013-10-11 2015-07-22 天空激光二极管有限公司 可佩戴式装置
JP6722474B2 (ja) * 2016-03-09 2020-07-15 フォトンリサーチ株式会社 マルチ波長レーザ光源モジュール、及び合波器付きマルチ波長レーザ光源モジュール
DE102018009384B4 (de) * 2018-11-30 2022-01-20 Diehl Defence Gmbh & Co. Kg Laser-Detektorsystem
DE102018009383A1 (de) * 2018-11-30 2020-06-04 Diehl Defence Gmbh & Co. Kg Verfahren zum Herstellen eines Multistrahllasers
CN114731021A (zh) * 2019-09-30 2022-07-08 奥斯兰姆奥普托半导体股份有限两合公司 激光封装及具有激光封装的系统

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648977A (en) * 1994-10-11 1997-07-15 Mitsubishi Denki Kabushiki Kaisha Laser array device and method of fabricating the device
US5668822A (en) * 1994-08-05 1997-09-16 Mitsubishi Denki Kabushiki Kaisha Integrated semiconductor laser device
JP3240794B2 (ja) * 1993-11-25 2001-12-25 株式会社デンソー 半導体レーザ
CN1677781A (zh) * 2004-03-30 2005-10-05 三洋电机株式会社 半导体激光装置
CN1838494A (zh) * 2005-03-25 2006-09-27 三洋电机株式会社 半导体激光装置和光学拾取装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63287085A (ja) * 1987-05-19 1988-11-24 Omron Tateisi Electronics Co マルチビ−ム光源
JPH11186669A (ja) 1997-12-22 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ装置
JPH11186658A (ja) * 1997-12-24 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ装置
JP2006059471A (ja) 2004-08-20 2006-03-02 Sony Corp レーザ出射装置及び光学ヘッド
JP2007115724A (ja) * 2005-10-18 2007-05-10 Matsushita Electric Ind Co Ltd 半導体レーザ装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3240794B2 (ja) * 1993-11-25 2001-12-25 株式会社デンソー 半導体レーザ
US5668822A (en) * 1994-08-05 1997-09-16 Mitsubishi Denki Kabushiki Kaisha Integrated semiconductor laser device
US5648977A (en) * 1994-10-11 1997-07-15 Mitsubishi Denki Kabushiki Kaisha Laser array device and method of fabricating the device
CN1677781A (zh) * 2004-03-30 2005-10-05 三洋电机株式会社 半导体激光装置
CN1838494A (zh) * 2005-03-25 2006-09-27 三洋电机株式会社 半导体激光装置和光学拾取装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104852274A (zh) * 2014-02-13 2015-08-19 三菱电机株式会社 半导体激光光源
CN104852274B (zh) * 2014-02-13 2018-11-27 三菱电机株式会社 半导体激光光源
CN112582874A (zh) * 2019-09-29 2021-03-30 山东华光光电子股份有限公司 一种激光光灸用复合激光器及封装方法
CN112582874B (zh) * 2019-09-29 2021-10-01 山东华光光电子股份有限公司 一种激光光灸用复合激光器及封装方法
WO2021098841A1 (zh) * 2019-11-21 2021-05-27 深圳市中光工业技术研究院 激光光源

Also Published As

Publication number Publication date
US8322879B2 (en) 2012-12-04
JP2010251502A (ja) 2010-11-04
US20100265702A1 (en) 2010-10-21

Similar Documents

Publication Publication Date Title
CN101867157A (zh) 多波长半导体激光装置
JP5522977B2 (ja) 多波長半導体レーザ装置
JP4711838B2 (ja) 多波長半導体レーザ装置
US8619825B2 (en) Light-emitting device having a thermal conductive member with wiring function and method of manufacturing the same
JP4930322B2 (ja) 半導体発光素子、光ピックアップ装置および情報記録再生装置
CN100502177C (zh) 双光束半导体激光器
US8275013B2 (en) Semiconductor laser device and method of manufacturing the same
JP4288620B2 (ja) 半導体発光素子およびその製造方法
CN102195235A (zh) 发光装置以及采用该发光装置的光学设备
JP2011018761A (ja) 半導体レーザ装置、半導体レーザ装置の製造方法及び光ピックアップ並びに光学装置
JP5799727B2 (ja) 多波長半導体レーザ装置及び多波長半導体レーザ装置の製造方法
JP5227666B2 (ja) 半導体レーザ装置およびその製造方法
JP2013016585A (ja) 多波長半導体レーザ装置
US20110051773A1 (en) Semiconductor laser device
JP2007311680A (ja) 半導体レーザ装置
JP2011199137A (ja) 多波長半導体レーザ装置
GB2477458A (en) Multi-wavelength semiconductor laser device
JP2013080781A (ja) 多波長半導体レーザ装置
JP2010016095A (ja) 半導体レーザ装置およびその製造方法
JP2008187082A (ja) レーザ装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20101020