JP2010251502A - 多波長半導体レーザ装置 - Google Patents

多波長半導体レーザ装置 Download PDF

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Publication number
JP2010251502A
JP2010251502A JP2009098949A JP2009098949A JP2010251502A JP 2010251502 A JP2010251502 A JP 2010251502A JP 2009098949 A JP2009098949 A JP 2009098949A JP 2009098949 A JP2009098949 A JP 2009098949A JP 2010251502 A JP2010251502 A JP 2010251502A
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JP
Japan
Prior art keywords
submount
stem
semiconductor laser
laser device
central axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009098949A
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English (en)
Japanese (ja)
Other versions
JP2010251502A5 (enExample
Inventor
Shinji Abe
真司 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2009098949A priority Critical patent/JP2010251502A/ja
Priority to US12/753,136 priority patent/US8322879B2/en
Priority to CN201010165214A priority patent/CN101867157A/zh
Publication of JP2010251502A publication Critical patent/JP2010251502A/ja
Publication of JP2010251502A5 publication Critical patent/JP2010251502A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2009098949A 2009-04-15 2009-04-15 多波長半導体レーザ装置 Pending JP2010251502A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009098949A JP2010251502A (ja) 2009-04-15 2009-04-15 多波長半導体レーザ装置
US12/753,136 US8322879B2 (en) 2009-04-15 2010-04-02 Multi-wavelength semiconductor laser device
CN201010165214A CN101867157A (zh) 2009-04-15 2010-04-14 多波长半导体激光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009098949A JP2010251502A (ja) 2009-04-15 2009-04-15 多波長半導体レーザ装置

Publications (2)

Publication Number Publication Date
JP2010251502A true JP2010251502A (ja) 2010-11-04
JP2010251502A5 JP2010251502A5 (enExample) 2012-04-12

Family

ID=42958764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009098949A Pending JP2010251502A (ja) 2009-04-15 2009-04-15 多波長半導体レーザ装置

Country Status (3)

Country Link
US (1) US8322879B2 (enExample)
JP (1) JP2010251502A (enExample)
CN (1) CN101867157A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015153842A (ja) * 2014-02-13 2015-08-24 三菱電機株式会社 半導体レーザ光源

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2477458B (en) * 2009-06-09 2012-03-07 Mitsubishi Electric Corp Multi-wavelength semiconductor laser device
JP5522977B2 (ja) * 2009-06-09 2014-06-18 三菱電機株式会社 多波長半導体レーザ装置
US9927611B2 (en) * 2010-03-29 2018-03-27 Soraa Laser Diode, Inc. Wearable laser based display method and system
CN204496106U (zh) 2013-10-11 2015-07-22 天空激光二极管有限公司 可佩戴式装置
JP6722474B2 (ja) * 2016-03-09 2020-07-15 フォトンリサーチ株式会社 マルチ波長レーザ光源モジュール、及び合波器付きマルチ波長レーザ光源モジュール
DE102018009384B4 (de) * 2018-11-30 2022-01-20 Diehl Defence Gmbh & Co. Kg Laser-Detektorsystem
DE102018009383A1 (de) * 2018-11-30 2020-06-04 Diehl Defence Gmbh & Co. Kg Verfahren zum Herstellen eines Multistrahllasers
CN112582874B (zh) * 2019-09-29 2021-10-01 山东华光光电子股份有限公司 一种激光光灸用复合激光器及封装方法
CN114731021A (zh) * 2019-09-30 2022-07-08 奥斯兰姆奥普托半导体股份有限两合公司 激光封装及具有激光封装的系统
CN112825407B (zh) * 2019-11-21 2025-10-28 深圳市绎立锐光科技开发有限公司 激光光源

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63287085A (ja) * 1987-05-19 1988-11-24 Omron Tateisi Electronics Co マルチビ−ム光源
JPH0851247A (ja) * 1994-08-05 1996-02-20 Mitsubishi Electric Corp 集積型半導体レーザ装置の製造方法，及び集積型半導体レーザ装置
JPH11186658A (ja) * 1997-12-24 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ装置
JP2007115724A (ja) * 2005-10-18 2007-05-10 Matsushita Electric Ind Co Ltd 半導体レーザ装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3240794B2 (ja) 1993-11-25 2001-12-25 株式会社デンソー 半導体レーザ
JPH08111562A (ja) 1994-10-11 1996-04-30 Mitsubishi Electric Corp アレイ型半導体レーザ装置，及びその製造方法
JPH11186669A (ja) 1997-12-22 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ装置
JP4583128B2 (ja) * 2004-03-30 2010-11-17 三洋電機株式会社 半導体レーザ装置
JP2006059471A (ja) 2004-08-20 2006-03-02 Sony Corp レーザ出射装置及び光学ヘッド
JP4671728B2 (ja) 2005-03-25 2011-04-20 三洋電機株式会社 半導体レーザ装置および光ピックアップ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63287085A (ja) * 1987-05-19 1988-11-24 Omron Tateisi Electronics Co マルチビ−ム光源
JPH0851247A (ja) * 1994-08-05 1996-02-20 Mitsubishi Electric Corp 集積型半導体レーザ装置の製造方法，及び集積型半導体レーザ装置
JPH11186658A (ja) * 1997-12-24 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ装置
JP2007115724A (ja) * 2005-10-18 2007-05-10 Matsushita Electric Ind Co Ltd 半導体レーザ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015153842A (ja) * 2014-02-13 2015-08-24 三菱電機株式会社 半導体レーザ光源

Also Published As

Publication number Publication date
US8322879B2 (en) 2012-12-04
US20100265702A1 (en) 2010-10-21
CN101867157A (zh) 2010-10-20

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