JP2010251502A5 - - Google Patents

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Publication number
JP2010251502A5
JP2010251502A5 JP2009098949A JP2009098949A JP2010251502A5 JP 2010251502 A5 JP2010251502 A5 JP 2010251502A5 JP 2009098949 A JP2009098949 A JP 2009098949A JP 2009098949 A JP2009098949 A JP 2009098949A JP 2010251502 A5 JP2010251502 A5 JP 2010251502A5
Authority
JP
Japan
Prior art keywords
submount
semiconductor laser
laser device
stem
central axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009098949A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010251502A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009098949A priority Critical patent/JP2010251502A/ja
Priority claimed from JP2009098949A external-priority patent/JP2010251502A/ja
Priority to US12/753,136 priority patent/US8322879B2/en
Priority to CN201010165214A priority patent/CN101867157A/zh
Publication of JP2010251502A publication Critical patent/JP2010251502A/ja
Publication of JP2010251502A5 publication Critical patent/JP2010251502A5/ja
Pending legal-status Critical Current

Links

JP2009098949A 2009-04-15 2009-04-15 多波長半導体レーザ装置 Pending JP2010251502A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009098949A JP2010251502A (ja) 2009-04-15 2009-04-15 多波長半導体レーザ装置
US12/753,136 US8322879B2 (en) 2009-04-15 2010-04-02 Multi-wavelength semiconductor laser device
CN201010165214A CN101867157A (zh) 2009-04-15 2010-04-14 多波长半导体激光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009098949A JP2010251502A (ja) 2009-04-15 2009-04-15 多波長半導体レーザ装置

Publications (2)

Publication Number Publication Date
JP2010251502A JP2010251502A (ja) 2010-11-04
JP2010251502A5 true JP2010251502A5 (enExample) 2012-04-12

Family

ID=42958764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009098949A Pending JP2010251502A (ja) 2009-04-15 2009-04-15 多波長半導体レーザ装置

Country Status (3)

Country Link
US (1) US8322879B2 (enExample)
JP (1) JP2010251502A (enExample)
CN (1) CN101867157A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2477458B (en) * 2009-06-09 2012-03-07 Mitsubishi Electric Corp Multi-wavelength semiconductor laser device
JP5522977B2 (ja) * 2009-06-09 2014-06-18 三菱電機株式会社 多波長半導体レーザ装置
US9927611B2 (en) * 2010-03-29 2018-03-27 Soraa Laser Diode, Inc. Wearable laser based display method and system
CN204496106U (zh) 2013-10-11 2015-07-22 天空激光二极管有限公司 可佩戴式装置
JP2015153842A (ja) * 2014-02-13 2015-08-24 三菱電機株式会社 半導体レーザ光源
JP6722474B2 (ja) * 2016-03-09 2020-07-15 フォトンリサーチ株式会社 マルチ波長レーザ光源モジュール、及び合波器付きマルチ波長レーザ光源モジュール
DE102018009384B4 (de) * 2018-11-30 2022-01-20 Diehl Defence Gmbh & Co. Kg Laser-Detektorsystem
DE102018009383A1 (de) * 2018-11-30 2020-06-04 Diehl Defence Gmbh & Co. Kg Verfahren zum Herstellen eines Multistrahllasers
CN112582874B (zh) * 2019-09-29 2021-10-01 山东华光光电子股份有限公司 一种激光光灸用复合激光器及封装方法
CN114731021A (zh) * 2019-09-30 2022-07-08 奥斯兰姆奥普托半导体股份有限两合公司 激光封装及具有激光封装的系统
CN112825407B (zh) * 2019-11-21 2025-10-28 深圳市绎立锐光科技开发有限公司 激光光源

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63287085A (ja) * 1987-05-19 1988-11-24 Omron Tateisi Electronics Co マルチビ−ム光源
JP3240794B2 (ja) 1993-11-25 2001-12-25 株式会社デンソー 半導体レーザ
JPH0851247A (ja) * 1994-08-05 1996-02-20 Mitsubishi Electric Corp 集積型半導体レーザ装置の製造方法，及び集積型半導体レーザ装置
JPH08111562A (ja) 1994-10-11 1996-04-30 Mitsubishi Electric Corp アレイ型半導体レーザ装置，及びその製造方法
JPH11186669A (ja) 1997-12-22 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ装置
JPH11186658A (ja) * 1997-12-24 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ装置
JP4583128B2 (ja) * 2004-03-30 2010-11-17 三洋電機株式会社 半導体レーザ装置
JP2006059471A (ja) 2004-08-20 2006-03-02 Sony Corp レーザ出射装置及び光学ヘッド
JP4671728B2 (ja) 2005-03-25 2011-04-20 三洋電機株式会社 半導体レーザ装置および光ピックアップ装置
JP2007115724A (ja) * 2005-10-18 2007-05-10 Matsushita Electric Ind Co Ltd 半導体レーザ装置

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