CN101809187B - 用于无机材料的选择区域沉积的有机硅氧烷材料 - Google Patents
用于无机材料的选择区域沉积的有机硅氧烷材料 Download PDFInfo
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- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- HLWCOIUDOLYBGD-UHFFFAOYSA-N trichloro(decyl)silane Chemical compound CCCCCCCCCC[Si](Cl)(Cl)Cl HLWCOIUDOLYBGD-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 125000004950 trifluoroalkyl group Chemical group 0.000 description 1
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Surface Treatment Of Glass (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/861,705 US8017183B2 (en) | 2007-09-26 | 2007-09-26 | Organosiloxane materials for selective area deposition of inorganic materials |
| US11/861705 | 2007-09-26 | ||
| US11/861,705 | 2007-09-26 | ||
| PCT/US2008/010824 WO2009042054A2 (en) | 2007-09-26 | 2008-09-17 | Organosiloxane materials for selective area deposition of inorganic materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101809187A CN101809187A (zh) | 2010-08-18 |
| CN101809187B true CN101809187B (zh) | 2013-02-13 |
Family
ID=40377367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880109095.3A Expired - Fee Related CN101809187B (zh) | 2007-09-26 | 2008-09-17 | 用于无机材料的选择区域沉积的有机硅氧烷材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8017183B2 (enExample) |
| EP (1) | EP2193218B1 (enExample) |
| JP (1) | JP2011501779A (enExample) |
| CN (1) | CN101809187B (enExample) |
| AT (1) | ATE542929T1 (enExample) |
| TW (1) | TWI459467B (enExample) |
| WO (1) | WO2009042054A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI620830B (zh) * | 2016-12-30 | 2018-04-11 | Nat Chung Shan Inst Science & Tech | Batch coating process system |
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| EP2362002A1 (en) * | 2010-02-18 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Continuous patterned layer deposition |
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| AU2018355524B2 (en) * | 2017-10-26 | 2020-12-10 | Syed Taymur Ahmad | Composition comprising non-Newtonian fluids for hydrophobic, oleophobic, and oleophilic coatings, and methods of using the same |
| CN111819659A (zh) * | 2018-01-16 | 2020-10-23 | 朗姆研究公司 | 基于蚀刻残渣的抑制剂的选择性处理 |
| JP7721439B2 (ja) | 2018-11-19 | 2025-08-12 | ラム リサーチ コーポレーション | タングステン用モリブデンテンプレート |
| JP7581213B2 (ja) | 2019-01-28 | 2024-11-12 | ラム リサーチ コーポレーション | 金属膜の蒸着 |
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| CN110791747A (zh) * | 2019-10-15 | 2020-02-14 | 江苏卓高新材料科技有限公司 | 一种用于薄膜材料表面沉积的沉积装置及沉积方法 |
| WO2021076636A1 (en) | 2019-10-15 | 2021-04-22 | Lam Research Corporation | Molybdenum fill |
| KR102254394B1 (ko) | 2020-07-16 | 2021-05-24 | 솔브레인 주식회사 | 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판 |
| CN116648301A (zh) * | 2020-11-10 | 2023-08-25 | 卢米瑞德思英国有限公司 | 用于检测液体样本中的靶标的系统 |
| KR20230032924A (ko) * | 2021-08-31 | 2023-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 억제제를 사용하는 갭 증착용 방법 및 시스템 |
| JP2024546754A (ja) * | 2021-12-16 | 2024-12-26 | ラム リサーチ コーポレーション | ハロゲン含有堆積阻害剤を使用した凹状フィーチャへの金属の堆積 |
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- 2008-09-17 JP JP2010526903A patent/JP2011501779A/ja active Pending
- 2008-09-17 WO PCT/US2008/010824 patent/WO2009042054A2/en not_active Ceased
- 2008-09-17 CN CN200880109095.3A patent/CN101809187B/zh not_active Expired - Fee Related
- 2008-09-17 AT AT08833324T patent/ATE542929T1/de active
- 2008-09-25 TW TW097136917A patent/TWI459467B/zh not_active IP Right Cessation
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| US5512131A (en) * | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI620830B (zh) * | 2016-12-30 | 2018-04-11 | Nat Chung Shan Inst Science & Tech | Batch coating process system |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009042054A3 (en) | 2009-06-04 |
| WO2009042054A2 (en) | 2009-04-02 |
| TW200926299A (en) | 2009-06-16 |
| JP2011501779A (ja) | 2011-01-13 |
| TWI459467B (zh) | 2014-11-01 |
| EP2193218A2 (en) | 2010-06-09 |
| EP2193218B1 (en) | 2012-01-25 |
| US8017183B2 (en) | 2011-09-13 |
| CN101809187A (zh) | 2010-08-18 |
| US20090081374A1 (en) | 2009-03-26 |
| ATE542929T1 (de) | 2012-02-15 |
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