JP2011501779A - 無機材料を選択領域堆積するためのオルガノシロキサン材料 - Google Patents

無機材料を選択領域堆積するためのオルガノシロキサン材料 Download PDF

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Publication number
JP2011501779A
JP2011501779A JP2010526903A JP2010526903A JP2011501779A JP 2011501779 A JP2011501779 A JP 2011501779A JP 2010526903 A JP2010526903 A JP 2010526903A JP 2010526903 A JP2010526903 A JP 2010526903A JP 2011501779 A JP2011501779 A JP 2011501779A
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substrate
deposition
gas
ald
thin film
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JP2010526903A
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Japanese (ja)
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JP2011501779A5 (enExample
Inventor
ヤン，チェン
マリー アービング，リン
ハワード レビー，デイビッド
ジェローム カウデリー−コーバン，ピーター
キャロル フリーマン，ダイアン
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イーストマン コダック カンパニー
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Publication of JP2011501779A publication Critical patent/JP2011501779A/ja
Publication of JP2011501779A5 publication Critical patent/JP2011501779A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Surface Treatment Of Glass (AREA)
  • Formation Of Insulating Films (AREA)
JP2010526903A 2007-09-26 2008-09-17 無機材料を選択領域堆積するためのオルガノシロキサン材料 Pending JP2011501779A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/861,705 US8017183B2 (en) 2007-09-26 2007-09-26 Organosiloxane materials for selective area deposition of inorganic materials
PCT/US2008/010824 WO2009042054A2 (en) 2007-09-26 2008-09-17 Organosiloxane materials for selective area deposition of inorganic materials

Publications (2)

Publication Number Publication Date
JP2011501779A true JP2011501779A (ja) 2011-01-13
JP2011501779A5 JP2011501779A5 (enExample) 2011-11-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526903A Pending JP2011501779A (ja) 2007-09-26 2008-09-17 無機材料を選択領域堆積するためのオルガノシロキサン材料

Country Status (7)

Country Link
US (1) US8017183B2 (enExample)
EP (1) EP2193218B1 (enExample)
JP (1) JP2011501779A (enExample)
CN (1) CN101809187B (enExample)
AT (1) ATE542929T1 (enExample)
TW (1) TWI459467B (enExample)
WO (1) WO2009042054A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
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WO2014132891A1 (ja) * 2013-02-28 2014-09-04 三井造船株式会社 成膜装置及び成膜方法
WO2014132892A1 (ja) 2013-02-28 2014-09-04 三井造船株式会社 成膜装置及びインジェクタ
KR20170117531A (ko) 2015-03-13 2017-10-23 가부시키가이샤 무라타 세이사쿠쇼 원자층 퇴적 저해 재료
JP2020179160A (ja) * 2019-03-29 2020-11-05 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ バネ荷重された医療装置

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US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
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US8618003B2 (en) 2011-12-05 2013-12-31 Eastman Kodak Company Method of making electronic devices using selective deposition
US20140065838A1 (en) * 2012-08-31 2014-03-06 Carolyn R. Ellinger Thin film dielectric layer formation
US8927434B2 (en) * 2012-08-31 2015-01-06 Eastman Kodak Company Patterned thin film dielectric stack formation
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US8846545B2 (en) 2012-08-31 2014-09-30 Eastman Kodak Company Method of forming patterned thin film dielectric stack
US8653516B1 (en) 2012-08-31 2014-02-18 Eastman Kodak Company High performance thin film transistor
US8921236B1 (en) 2013-06-21 2014-12-30 Eastman Kodak Company Patterning for selective area deposition
US9425078B2 (en) * 2014-02-26 2016-08-23 Lam Research Corporation Inhibitor plasma mediated atomic layer deposition for seamless feature fill
US9142647B1 (en) 2014-03-06 2015-09-22 Eastman Kodak Company VTFT formation using selective area deposition
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CN105908151B (zh) * 2016-03-01 2018-11-30 江南大学 一种纳米薄膜的原子层沉积定量建模方法
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WO2014132891A1 (ja) * 2013-02-28 2014-09-04 三井造船株式会社 成膜装置及び成膜方法
WO2014132892A1 (ja) 2013-02-28 2014-09-04 三井造船株式会社 成膜装置及びインジェクタ
US10246776B2 (en) 2013-02-28 2019-04-02 Mitsui E&S Machinery Co., Ltd Layer-forming device and layer-forming method
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CN107406975A (zh) * 2015-03-13 2017-11-28 株式会社村田制作所 原子层沉积抑制材料
US10508337B2 (en) 2015-03-13 2019-12-17 Murata Manufacturing Co., Ltd. Atomic layer deposition-inhibiting material
JP2020179160A (ja) * 2019-03-29 2020-11-05 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ バネ荷重された医療装置

Also Published As

Publication number Publication date
WO2009042054A3 (en) 2009-06-04
WO2009042054A2 (en) 2009-04-02
TW200926299A (en) 2009-06-16
TWI459467B (zh) 2014-11-01
EP2193218A2 (en) 2010-06-09
EP2193218B1 (en) 2012-01-25
US8017183B2 (en) 2011-09-13
CN101809187A (zh) 2010-08-18
US20090081374A1 (en) 2009-03-26
CN101809187B (zh) 2013-02-13
ATE542929T1 (de) 2012-02-15

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