ATE542929T1 - Verfahren zur ablagerung anorganischer materialien in ausgewählten bereichen - Google Patents

Verfahren zur ablagerung anorganischer materialien in ausgewählten bereichen

Info

Publication number
ATE542929T1
ATE542929T1 AT08833324T AT08833324T ATE542929T1 AT E542929 T1 ATE542929 T1 AT E542929T1 AT 08833324 T AT08833324 T AT 08833324T AT 08833324 T AT08833324 T AT 08833324T AT E542929 T1 ATE542929 T1 AT E542929T1
Authority
AT
Austria
Prior art keywords
selected areas
inhibitor material
deposition inhibitor
substrate
inorganic materials
Prior art date
Application number
AT08833324T
Other languages
German (de)
English (en)
Inventor
Cheng Yang
Lyn Marie Irving
David Howard Levy
Peter Jerome Cowdery-Corvan
Diane Carol Freeman
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of ATE542929T1 publication Critical patent/ATE542929T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Surface Treatment Of Glass (AREA)
AT08833324T 2007-09-26 2008-09-17 Verfahren zur ablagerung anorganischer materialien in ausgewählten bereichen ATE542929T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/861,705 US8017183B2 (en) 2007-09-26 2007-09-26 Organosiloxane materials for selective area deposition of inorganic materials
PCT/US2008/010824 WO2009042054A2 (en) 2007-09-26 2008-09-17 Organosiloxane materials for selective area deposition of inorganic materials

Publications (1)

Publication Number Publication Date
ATE542929T1 true ATE542929T1 (de) 2012-02-15

Family

ID=40377367

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08833324T ATE542929T1 (de) 2007-09-26 2008-09-17 Verfahren zur ablagerung anorganischer materialien in ausgewählten bereichen

Country Status (7)

Country Link
US (1) US8017183B2 (enExample)
EP (1) EP2193218B1 (enExample)
JP (1) JP2011501779A (enExample)
CN (1) CN101809187B (enExample)
AT (1) ATE542929T1 (enExample)
TW (1) TWI459467B (enExample)
WO (1) WO2009042054A2 (enExample)

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EP2362002A1 (en) * 2010-02-18 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Continuous patterned layer deposition
EP2362411A1 (en) 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
JP5618588B2 (ja) * 2010-03-24 2014-11-05 キヤノン株式会社 インプリント方法
WO2011130509A1 (en) * 2010-04-15 2011-10-20 The Board Of Trustees Of The University Of Illinois Mutants of l-arabinitol 4-dehydrogenase from neurospora crassa
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US8273654B1 (en) 2011-09-29 2012-09-25 Eastman Kodak Company Producing a vertical transistor including reentrant profile
US8623757B2 (en) 2011-09-29 2014-01-07 Eastmak Kodak Company Producing a vertical transistor including reentrant profile
US8618003B2 (en) 2011-12-05 2013-12-31 Eastman Kodak Company Method of making electronic devices using selective deposition
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US8846545B2 (en) 2012-08-31 2014-09-30 Eastman Kodak Company Method of forming patterned thin film dielectric stack
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US9142647B1 (en) 2014-03-06 2015-09-22 Eastman Kodak Company VTFT formation using selective area deposition
US9214560B2 (en) 2014-03-06 2015-12-15 Eastman Kodak Company VTFT including overlapping electrodes
US9198283B2 (en) 2014-03-06 2015-11-24 Eastman Kodak Company Vertically spaced electrode structure
US9202898B2 (en) 2014-03-06 2015-12-01 Eastman Kodak Company Fabricating VTFT with polymer core
US9093470B1 (en) 2014-03-06 2015-07-28 Eastman Kodak Company VTFT formation using capillary action
US9129993B1 (en) 2014-03-06 2015-09-08 Eastman Kodak Company Forming a VTFT using printing
US9236486B2 (en) 2014-03-06 2016-01-12 Eastman Kodak Company Offset independently operable VTFT electrodes
US9147770B1 (en) 2014-03-06 2015-09-29 Eastman Kodak Company VTFT with extended electrode
US9331205B2 (en) 2014-03-06 2016-05-03 Eastman Kodak Company VTFT with post, cap, and aligned gate
US9153698B2 (en) 2014-03-06 2015-10-06 Eastman Kodak Company VTFT with gate aligned to vertical structure
US9123815B1 (en) 2014-03-06 2015-09-01 Eastman Kodak Company VTFTs including offset electrodes
US9153445B2 (en) 2014-03-06 2015-10-06 Eastman Kodak Company Forming a VTFT with aligned gate
US9178029B2 (en) 2014-03-06 2015-11-03 Eastman Kodak Company Forming a VTFT gate using printing
US9634145B2 (en) 2014-10-29 2017-04-25 Eastman Kodak Company TFT substrate with variable dielectric thickness
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KR20260000586A (ko) 2019-01-28 2026-01-02 램 리써치 코포레이션 금속 막들의 증착
EP4596776A3 (en) * 2019-02-19 2025-10-29 Xefco Pty Ltd System for treatment and/or coating of substrates
CN119194406A (zh) 2019-03-11 2024-12-27 朗姆研究公司 用于沉积含钼膜的前体
EP3714914A1 (en) * 2019-03-29 2020-09-30 Picosun Oy Spring loaded medical device
CN114342062A (zh) 2019-09-03 2022-04-12 朗姆研究公司 钼沉积
KR20220082023A (ko) 2019-10-15 2022-06-16 램 리써치 코포레이션 몰리브덴 충진
CN110791747A (zh) * 2019-10-15 2020-02-14 江苏卓高新材料科技有限公司 一种用于薄膜材料表面沉积的沉积装置及沉积方法
KR102254394B1 (ko) * 2020-07-16 2021-05-24 솔브레인 주식회사 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판
CN116648301A (zh) * 2020-11-10 2023-08-25 卢米瑞德思英国有限公司 用于检测液体样本中的靶标的系统
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Also Published As

Publication number Publication date
WO2009042054A3 (en) 2009-06-04
US20090081374A1 (en) 2009-03-26
US8017183B2 (en) 2011-09-13
JP2011501779A (ja) 2011-01-13
EP2193218B1 (en) 2012-01-25
CN101809187B (zh) 2013-02-13
CN101809187A (zh) 2010-08-18
TWI459467B (zh) 2014-11-01
EP2193218A2 (en) 2010-06-09
TW200926299A (en) 2009-06-16
WO2009042054A2 (en) 2009-04-02

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