CN101796619B - 电路基板和显示装置 - Google Patents

电路基板和显示装置 Download PDF

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Publication number
CN101796619B
CN101796619B CN200880106147.1A CN200880106147A CN101796619B CN 101796619 B CN101796619 B CN 101796619B CN 200880106147 A CN200880106147 A CN 200880106147A CN 101796619 B CN101796619 B CN 101796619B
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distribution
interlayer dielectric
circuit
film
circuit substrate
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CN200880106147.1A
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Chinese (zh)
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CN101796619A (zh
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森胁弘幸
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
CN200880106147.1A 2007-11-02 2008-10-14 电路基板和显示装置 Active CN101796619B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007286363 2007-11-02
JP2007-286363 2007-11-02
PCT/JP2008/068591 WO2009057444A1 (ja) 2007-11-02 2008-10-14 回路基板及び表示装置

Publications (2)

Publication Number Publication Date
CN101796619A CN101796619A (zh) 2010-08-04
CN101796619B true CN101796619B (zh) 2013-03-06

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CN200880106147.1A Active CN101796619B (zh) 2007-11-02 2008-10-14 电路基板和显示装置

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Country Link
US (1) US8692251B2 (ja)
CN (1) CN101796619B (ja)
WO (1) WO2009057444A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101803554B1 (ko) * 2009-10-21 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
CN102640268B (zh) 2010-03-04 2016-03-23 日本瑞翁株式会社 半导体元件基板的制造方法
TWI688047B (zh) * 2010-08-06 2020-03-11 半導體能源研究所股份有限公司 半導體裝置
TWI540710B (zh) * 2012-06-22 2016-07-01 Sony Corp A semiconductor device, a method for manufacturing a semiconductor device, and an electronic device
US11038140B2 (en) 2017-02-13 2021-06-15 Sony Corporation Display device, electronic device, and method of producing display device
CN107527925B (zh) 2017-08-25 2019-11-05 京东方科技集团股份有限公司 显示基板及其制造方法、显示面板、显示装置
CN115128873B (zh) * 2021-03-29 2023-12-05 株式会社日本显示器 显示装置及显示装置的阵列基板

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1581472A (zh) * 2003-08-05 2005-02-16 株式会社半导体能源研究所 布线板及其制造方法、半导体器件及其制造方法

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JPH08316310A (ja) 1995-05-15 1996-11-29 Sony Corp 半導体装置の製造方法
JPH1048660A (ja) 1996-08-06 1998-02-20 Toshiba Corp 液晶表示装置
JP3520396B2 (ja) * 1997-07-02 2004-04-19 セイコーエプソン株式会社 アクティブマトリクス基板と表示装置
JP4514871B2 (ja) 1999-01-29 2010-07-28 株式会社半導体エネルギー研究所 半導体装置および電子機器
US6593592B1 (en) * 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
JP2003338509A (ja) 2002-03-11 2003-11-28 Sanyo Electric Co Ltd トップゲート型薄膜トランジスタ
TW200304227A (en) * 2002-03-11 2003-09-16 Sanyo Electric Co Top gate type thin film transistor
GB0219771D0 (en) * 2002-08-24 2002-10-02 Koninkl Philips Electronics Nv Manufacture of electronic devices comprising thin-film circuit elements
JP4175877B2 (ja) * 2002-11-29 2008-11-05 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP4896369B2 (ja) * 2002-12-25 2012-03-14 株式会社半導体エネルギー研究所 半導体装置
US7408196B2 (en) * 2002-12-25 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR100542986B1 (ko) * 2003-04-29 2006-01-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터 제조 방법 및 이를 이용한 표시장치
JP2005072573A (ja) 2003-08-05 2005-03-17 Semiconductor Energy Lab Co Ltd 配線基板及びその作製方法、並びに半導体装置及びその作製方法
JP5040222B2 (ja) * 2005-12-13 2012-10-03 ソニー株式会社 表示装置
JP5090658B2 (ja) * 2006-04-06 2012-12-05 三菱電機株式会社 薄膜トランジスタ、及びその製造方法、並びにアクティブマトリクス型表示装置
JP4967631B2 (ja) * 2006-12-07 2012-07-04 三菱電機株式会社 表示装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1581472A (zh) * 2003-08-05 2005-02-16 株式会社半导体能源研究所 布线板及其制造方法、半导体器件及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开平8-316310A 1996.11.29

Also Published As

Publication number Publication date
WO2009057444A1 (ja) 2009-05-07
US8692251B2 (en) 2014-04-08
US20100193793A1 (en) 2010-08-05
CN101796619A (zh) 2010-08-04

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