CN101794073A - 感光性树脂组合物和图案形成方法 - Google Patents
感光性树脂组合物和图案形成方法 Download PDFInfo
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- CN101794073A CN101794073A CN201010003193A CN201010003193A CN101794073A CN 101794073 A CN101794073 A CN 101794073A CN 201010003193 A CN201010003193 A CN 201010003193A CN 201010003193 A CN201010003193 A CN 201010003193A CN 101794073 A CN101794073 A CN 101794073A
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- 238000000034 method Methods 0.000 title claims description 38
- 239000011342 resin composition Substances 0.000 title abstract description 89
- 238000000576 coating method Methods 0.000 claims abstract description 99
- 239000002904 solvent Substances 0.000 claims abstract description 74
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- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000001035 drying Methods 0.000 claims abstract description 40
- 238000001704 evaporation Methods 0.000 claims abstract description 35
- 230000008020 evaporation Effects 0.000 claims abstract description 35
- 238000009835 boiling Methods 0.000 claims abstract description 34
- 239000012046 mixed solvent Substances 0.000 claims abstract description 18
- 238000001291 vacuum drying Methods 0.000 claims abstract description 15
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 7
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims 4
- 239000000839 emulsion Substances 0.000 claims 2
- 235000013824 polyphenols Nutrition 0.000 claims 2
- 235000019260 propionic acid Nutrition 0.000 claims 2
- 239000011248 coating agent Substances 0.000 abstract description 81
- 238000011161 development Methods 0.000 abstract description 14
- 239000005011 phenolic resin Substances 0.000 abstract description 12
- 229920001568 phenolic resin Polymers 0.000 abstract description 12
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 abstract description 10
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 abstract description 8
- 239000003795 chemical substances by application Substances 0.000 abstract description 6
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- 230000002349 favourable effect Effects 0.000 abstract 1
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- MCSINKKTEDDPNK-UHFFFAOYSA-N propyl propionate Chemical compound CCCOC(=O)CC MCSINKKTEDDPNK-UHFFFAOYSA-N 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 16
- GQKDBQTXMIUPSY-UHFFFAOYSA-N 1-methoxypropan-2-ol;1-methoxypropan-2-yl acetate Chemical compound COCC(C)O.COCC(C)OC(C)=O GQKDBQTXMIUPSY-UHFFFAOYSA-N 0.000 description 15
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- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
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- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical compound CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 2
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- CPEXFJVZFNYXGU-UHFFFAOYSA-N 2,4,6-trihydroxybenzophenone Chemical compound OC1=CC(O)=CC(O)=C1C(=O)C1=CC=CC=C1 CPEXFJVZFNYXGU-UHFFFAOYSA-N 0.000 description 2
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- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 2
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- YCOXTKKNXUZSKD-UHFFFAOYSA-N 3,4-xylenol Chemical compound CC1=CC=C(O)C=C1C YCOXTKKNXUZSKD-UHFFFAOYSA-N 0.000 description 2
- LPCJHUPMQKSPDC-UHFFFAOYSA-N 3,5-diethylphenol Chemical compound CCC1=CC(O)=CC(CC)=C1 LPCJHUPMQKSPDC-UHFFFAOYSA-N 0.000 description 2
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- HMNKTRSOROOSPP-UHFFFAOYSA-N 3-Ethylphenol Chemical compound CCC1=CC=CC(O)=C1 HMNKTRSOROOSPP-UHFFFAOYSA-N 0.000 description 2
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- NPFYZDNDJHZQKY-UHFFFAOYSA-N 4-Hydroxybenzophenone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=CC=C1 NPFYZDNDJHZQKY-UHFFFAOYSA-N 0.000 description 2
- HXDOZKJGKXYMEW-UHFFFAOYSA-N 4-ethylphenol Chemical compound CCC1=CC=C(O)C=C1 HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 2
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
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- 230000000996 additive effect Effects 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
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- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
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- 125000000524 functional group Chemical group 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
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- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000013095 identification testing Methods 0.000 description 1
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 1
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 1
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000004780 naphthols Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- LHGVFZTZFXWLCP-UHFFFAOYSA-N pyrocatechol monomethyl ether Natural products COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical class ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- LZTRCELOJRDYMQ-UHFFFAOYSA-N triphenylmethanol Chemical class C=1C=CC=CC=1C(C=1C=CC=CC=1)(O)C1=CC=CC=C1 LZTRCELOJRDYMQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/115—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having supports or layers with means for obtaining a screen effect or for obtaining better contact in vacuum printing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Optical Filters (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
组合物No. | 溶剂(A) | 溶剂(B) | 比率 | 溶剂份额 | |
实施例1 | 1 | PGMEA | nBA | 90∶10 | 86 |
实施例2 | 2 | PGMEA | nBA | 70∶30 | 86 |
实施例3 | 3 | PGMEA | nBA | 50∶50 | 86 |
实施例4 | 4 | PGMEA | nPP | 90∶10 | 86 |
实施例5 | 5 | PGMEA | nPP | 70∶30 | 86 |
实施例6 | 6 | PGMEA | nPP | 50∶50 | 86 |
实施例7 | 7 | PGMEA | PGME | 90∶10 | 86 |
实施例8 | 8 | PGMEA | PGME | 70∶30 | 86 |
实施例9 | 9 | PGMEA | PGME | 50∶50 | 86 |
实施例10 | 10 | PGMEA | PGME | 30∶70 | 86 |
实施例11 | 11 | PGMEA | PGME | 20∶80 | 86 |
组合物No. | 溶剂(A) | 溶剂(B) | 比率 | 溶剂份额 | |
比较例1 | 12 | PGMEA | - | 100∶0 | 86 |
比较例2 | 13 | PGMEA | - | 100∶0 | 85 |
比较例3 | 14 | PGMEA | - | 100∶0 | 84 |
比较例4 | 15 | PGMEA | - | 100∶0 | 83 |
试验No. | 组合物No. | 溶剂(A) | 溶剂(B) | 比率 | 烘焙前自然干燥时间(分) | 涂敷状态(不匀) | 涂敷均一性 |
1 | 1 | PGMEA | nBA | 90∶10 | 10 | ○ | ○ |
2 | 1 | PGMEA | nBA | 90∶10 | 8 | ○ | ○ |
3 | 2 | PGMEA | nBA | 70∶30 | 10 | ○ | ○ |
4 | 2 | PGMEA | nBA | 70∶30 | 8 | ○ | ○ |
5 | 2 | PGMEA | nBA | 70∶30 | 5 | ○ | ○ |
6 | 3 | PGMEA | nBA | 50∶50 | 5 | ○ | ○ |
7 | 3 | PGMEA | nBA | 50∶50 | 4 | ○ | ○ |
8 | 4 | PGMEA | nPP | 90∶10 | 10 | ○ | ○ |
9 | 4 | PGMEA | nPP | 90∶10 | 8 | ○ | ○ |
10 | 5 | PGMEA | nPP | 70∶30 | 10 | ○ | ○ |
11 | 5 | PGMEA | nPP | 70∶30 | 8 | ○ | ○ |
12 | 5 | PGMEA | nPP | 70∶30 | 5 | ○ | ○ |
13 | 6 | PGMEA | nPP | 50∶50 | 5 | ○ | ○ |
14 | 6 | PGMEA | nPP | 50∶50 | 4 | ○ | ○ |
15 | 7 | PGMEA | PGME | 90∶10 | 10 | ○ | ○ |
16 | 7 | PGMEA | PGME | 90∶10 | 8 | ○ | ○ |
17 | 8 | PGMEA | PGME | 70∶30 | 10 | ○ | ○ |
18 | 8 | PGMEA | PGME | 70∶30 | 8 | ○ | ○ |
19 | 8 | PGMEA | PGME | 70∶30 | 5 | ○ | ○ |
20 | 9 | PGMEA | PGME | 50∶50 | 5 | ○ | ○ |
21 | 9 | PGMEA | PGME | 50∶50 | 4 | ○ | ○ |
22 | 10 | PGMEA | PGME | 30∶70 | 5 | ○ | ○ |
23 | 10 | PGMEA | PGME | 30∶70 | 3 | ○ | ○ |
24 | 11 | PGMEA | PGME | 20∶80 | 3 | ○ | ○ |
试验No. | 组合物No. | 溶剂(A) | 溶剂(B) | 比率 | 烘焙前自然干燥时间(分) | 涂敷状态(不匀) | 涂敷均一性 |
25 | 12 | PGMEA | - | 100∶0 | 10 | △ | △ |
26 | 12 | PGMEA | - | 100∶0 | 5 | × | × |
27 | 13 | PGMEA | - | 100∶0 | 10 | △ | △ |
28 | 13 | PGMEA | - | 100∶0 | 5 | × | × |
29 | 14 | PGMEA | - | 100∶0 | 10 | △ | △ |
30 | 15 | PGMEA | - | 100∶0 | 5 | × | × |
31 | 12 | PGMEA | - | 100∶0 | 进行VCD | △ | △ |
Claims (7)
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JP2009018321A JP5329999B2 (ja) | 2009-01-29 | 2009-01-29 | パターン形成方法 |
JP2009-018321 | 2009-01-29 |
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CN101794073A true CN101794073A (zh) | 2010-08-04 |
CN101794073B CN101794073B (zh) | 2013-07-17 |
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JP (1) | JP5329999B2 (zh) |
KR (1) | KR101658859B1 (zh) |
CN (1) | CN101794073B (zh) |
TW (1) | TWI481952B (zh) |
Cited By (3)
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CN102890420A (zh) * | 2011-07-21 | 2013-01-23 | 台湾永光化学工业股份有限公司 | 用于低温多晶硅液晶显示器制造的正型感光树脂组合物 |
CN103964698A (zh) * | 2013-02-04 | 2014-08-06 | 台湾永光化学工业股份有限公司 | 正型光阻组成物的用途 |
CN110597016A (zh) * | 2019-09-29 | 2019-12-20 | 北京北旭电子材料有限公司 | 一种光刻胶组合物、制备方法及图案化方法 |
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KR102041403B1 (ko) | 2013-01-02 | 2019-11-07 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 및 이를 이용한 금속 패턴의 형성 방법 |
TWI731961B (zh) * | 2016-04-19 | 2021-07-01 | 德商馬克專利公司 | 正向感光材料及形成正向凸紋影像之方法 |
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DE3674141D1 (de) * | 1985-10-28 | 1990-10-18 | Hoechst Celanese Corp | Strahlungsempfindliches, positiv-arbeitendes gemisch und hieraus hergestelltes photoresistmaterial. |
US5039594A (en) * | 1985-10-28 | 1991-08-13 | Hoechst Celanese Corporation | Positive photoresist containing a mixture of propylene glycol alkyl ethers and propylene glycol alkyl ether acetate |
JP2001269607A (ja) | 2000-03-28 | 2001-10-02 | Tokyo Electron Ltd | 塗布処理装置および塗布処理方法 |
US6911293B2 (en) * | 2002-04-11 | 2005-06-28 | Clariant Finance (Bvi) Limited | Photoresist compositions comprising acetals and ketals as solvents |
KR100973799B1 (ko) * | 2003-01-03 | 2010-08-03 | 삼성전자주식회사 | Mmn 헤드 코터용 포토레지스트 조성물 |
JP4028434B2 (ja) * | 2003-05-28 | 2007-12-26 | 東京応化工業株式会社 | 感光性組成物のコーティング方法 |
JP4308585B2 (ja) * | 2003-06-09 | 2009-08-05 | Azエレクトロニックマテリアルズ株式会社 | 感光性樹脂組成物密着性向上剤及びそれを含有する感光性樹脂組成物 |
KR101042667B1 (ko) * | 2004-07-05 | 2011-06-20 | 주식회사 동진쎄미켐 | 포토레지스트 조성물 |
KR20070116665A (ko) | 2005-03-30 | 2007-12-10 | 제온 코포레이션 | 패턴 형성 방법 |
JP4687902B2 (ja) | 2005-06-15 | 2011-05-25 | Jsr株式会社 | 感光性樹脂組成物、表示パネル用スペーサーおよび表示パネル |
JP4813193B2 (ja) * | 2006-01-31 | 2011-11-09 | Azエレクトロニックマテリアルズ株式会社 | スピンレス、スリットコーティングに適した感光性樹脂組成物 |
JP2008070480A (ja) * | 2006-09-12 | 2008-03-27 | Az Electronic Materials Kk | フォトレジスト用溶媒とそれを用いたスリットコーティング用フォトレジスト組成物 |
JP4403174B2 (ja) * | 2006-12-25 | 2010-01-20 | Azエレクトロニックマテリアルズ株式会社 | パターン形成方法およびそれに用いる感光性樹脂組成物 |
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CN102890420A (zh) * | 2011-07-21 | 2013-01-23 | 台湾永光化学工业股份有限公司 | 用于低温多晶硅液晶显示器制造的正型感光树脂组合物 |
TWI507818B (zh) * | 2011-07-21 | 2015-11-11 | Everlight Chem Ind Corp | 低溫多晶矽之液晶顯示器製程用之正型感光樹脂組成物 |
CN103964698A (zh) * | 2013-02-04 | 2014-08-06 | 台湾永光化学工业股份有限公司 | 正型光阻组成物的用途 |
CN110597016A (zh) * | 2019-09-29 | 2019-12-20 | 北京北旭电子材料有限公司 | 一种光刻胶组合物、制备方法及图案化方法 |
CN110597016B (zh) * | 2019-09-29 | 2022-10-14 | 北京北旭电子材料有限公司 | 一种光刻胶组合物、制备方法及图案化方法 |
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