CN101689515A - 具有用于化学镀镍沉积的种子层的底部凸块金属化结构 - Google Patents

具有用于化学镀镍沉积的种子层的底部凸块金属化结构 Download PDF

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CN101689515A
CN101689515A CN200880020888A CN200880020888A CN101689515A CN 101689515 A CN101689515 A CN 101689515A CN 200880020888 A CN200880020888 A CN 200880020888A CN 200880020888 A CN200880020888 A CN 200880020888A CN 101689515 A CN101689515 A CN 101689515A
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托马斯·施特罗特曼
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Abstract

公开了一种具有用于化学镀镍沉积的种子层的底部凸块金属化(UBM)结构和方法，其涉及UBM结构，该结构包括半导体基板，至少一个最后金属层、钝化层、金属种子层以及金属化层。该至少一个最后金属层形成在半导体基板的至少一部分上。而且，钝化层形成在半导体基板的至少一部分上。另外，钝化层包括多个开口。另外，钝化层由非导电材料形成。该至少一个最后金属层通过多个开口暴露。金属种子层形成在钝化层上并覆盖多个开口。金属化层形成在金属种子层上。金属化层由化学镀沉积形成。

Description

具有用于化学镀镍沉积的种子层的底部凸块金属化结构
相关申请的交叉参考
本申请要求2007年6月20日提交的系列号为60/945,310的美国临时申请和2008年6月19日提交的第12/142,415号美国非临时申请的权益和优先权，上述所列专利参考文献通过引用方式整体结合于此。
本申请包括受到版权保护的材料。版权所有者不反对任何人对出现在专利商标局的文件和记录介质中的专利公开内容进行文件复制，但除此之外，版权所有者保留所有的版权。
技术领域
本发明涉及微电子半导体晶片级的芯片尺寸和倒装芯片的加工。更具体地，公开了一种底部凸块金属化结构的构成以及相关的制造方法，其中的底部凸块金属化结构具有金属种子层和化学镀镍沉积层。
背景技术
倒装芯片技术是先进的半导体技术，其中，芯片或模被面朝下放置并用各种互连材料结合到基板上。在倒装芯片附接中，焊料凸块沉积在芯片或模上，并用于芯片或集成电路与基板之间的电互连。
晶片级芯片尺寸封装和晶片级封装通过在半导体器件制造过程中直接在半导体器件上形成电连接而发展了倒装芯片的概念。这允许半导体器件直接被安装到印刷电路板上，因此对于单独封装的需要被消除了。所产生的封装器件的尺寸被类似地设置成对应于无封装的半导体器件。
倒装芯片的底部凸块金属化(UBM)层是用于整体结构的支撑件。需要UBM作为可焊的表面，并在焊料与焊盘金属成分的最后金属层(终金属层，final metal layer)之间提供阻挡层。UBM必须满足若干要求，包括但不限于，向最后金属层提供强、稳定、低电阻的电连接、很好地粘附到铝和钝化层以密封铝免受环境影响、以及提供强屏障以防止其它凸块金属的扩散。
图1A和1B示出了处理前的传统的晶片。该器件包括基板10、器件最后金属12，以及器件钝化层14。基板10可由包括但不限于硅、镓砷化物、钽酸锂、硅锗的材料或其它用在半导体工业中的适当晶片基板。器件最后金属12由典型为铝、铜或金，或这些材料的复合物的金属构成。
器件钝化层14典型地包括氮化硅、氧化氮(oxidenitride)或相似物质。钝化层不连续，而是具有开口的，在开口中没有钝化材料，该开口被单独的表示为钝化开口。钝化开口通常为圆形并位于器件的中心。在钝化开口所限定的区域中，金属将在晶片级芯片尺寸或倒装芯片封装处理中随后沉积，以形成连接并粘附到器件。
图2A示出了通过化学镀镍过程形成的传统的UBM 16的顶视图，图2B示出了通过化学镀镍过程形成的传统的UBM 16的横截面图。UBM 16部分地覆盖钝化层14，粘附于最后金属12，并典型地形成约为1.0微米或更厚的层。UBM 16的上表面为焊料凸块的放置提供地点，并有利于其粘附。
但是，利用化学镀镍形成UBM存在若干缺点。化学镀镍不粘附于钝化层。在某些情况下，因为最后金属合金的变化以及用于产生接触开口的钝化接触的不一致，使得化学镀镍的沉积不均匀。由于没有提供稳定且低电阻的电接触，从而可能导致电子器件的集成性出现问题。另外，在这些开口中会形成湿气，导致在某些区域中焊料凸块没有被适当结合，从而导致与电接触有关的问题。
另外，化学镀镍沉积难于在不适于化学镀镍沉积的电子器件上进行。例如，纯铝、铜和金可能不适合粘附于化学镀镍，除非化学镀工艺的化学作用针对每种单独的金属而进行了特别的优化。其它最后金属层可能不具有与化学镀镍的合适的导电性以提供强电连接。
其它传统的倒装芯片和晶片级芯片尺寸封装器件使用薄膜溅射，用于沉积用作UBM的薄金属层。但是，这些溅射层更昂贵，并不像化学镀镍层一样厚。因此，UBM的热机械性能不那么强。随着凸块产品的市场继续增加，成本和性能压力迫使工业界寻找更易于执行的薄膜技术。
发明内容
在本发明公开的一个方面中，提供了一种底部凸块金属化结构，该结构利用了金属种子层上的化学镀镍，其提供了改善的热机械能力、均匀的沉积以及与多种最后金属层的结构相容性和电相容性。
附图说明
将附图包括进来以提供对于所公开的具有改善的金属性能和抛掷法试验性能的底部凸块金属化结构的进一步理解，并且将附图并入并构成本说明书的一部分，附图示出了示范性实施例，并且连同说明一起用于说明本发明的至少一个实施例，图中：
图1A示出了处理前的具有钝化开口和最后金属层的晶片的顶视图。
图1B示出了处理前的具有钝化开口和最后金属层的晶片的横截面图。
图2A示出了具有通过化学镀镍过程形成的传统UBM的晶片的顶视图。
图2B示出了具有通过化学镀镍过程形成的传统UBM的晶片的横截面图。
图3A示出了其上沉积有未图案化的薄金属种子层的晶片的顶视图。
图3B示出了其上沉积有未图案化的薄金属种子层的晶片的横截面图。
图4A示出了置于金属种子层上的图案化的光致抗蚀剂层的顶视图。
图4B示出了置于金属种子层上的图案化的光致抗蚀剂层的横截面图。
图5A示出了在暴露金属被化学蚀刻且除去了光致抗蚀剂后的金属种子层的顶视图。
图5B示出了在暴露金属被化学蚀刻且除去了光致抗蚀剂后的金属种子层的横截面图。
图6A示出了在化学镀镍处于图案化的种子层上后所完成的UBM结构的顶视图。
图6B示出了在化学镀镍处于图案化的种子层上后所完成的UBM结构的横截面图。
图7A示出了置于用于可替换的UBM结构的金属种子层上的图案化光致抗蚀剂层的顶视图。
图7B示出了置于用于可替换的UBM结构的金属种子层上的图案化光致抗蚀剂层的横截面图。
图8A示出了在暴露的金属被化学蚀刻且除去了光致抗蚀剂后的用于可替换的示范性UBM结构的金属种子层的顶视图。
图8B示出了在暴露的金属被化学蚀刻且除去了光致抗蚀剂后的用于可替换的示范性UBM结构的金属种子层的横截面图。
图9A示出了在图案化的化学镀镍处于用于可替换的示范性UBM结构的金属种子层结构上后的所完成的UBM结构的顶视图。
图9B示出了在图案化的化学镀镍处于用于可替换的示范性UBM结构的金属种子层上后的所完成的UBM结构的横截面图。
图10A示出了器件的顶视图，其利用了用于生产该器件的可替换过程并且示出了置于金属种子层上的图案化的光致抗蚀剂层。
图10B示出了器件的截面图，其利用了用于生产该器件的可替换过程并且示出了置于金属种子层上的图案化的光致抗蚀剂层。
图11A示出了器件的顶视图，其中，在化学镀镍已经利用光致抗蚀剂层沉积在种子层上之后，利用了用于生产该器件的可替换过程并且示出了该器件。
图11B示出了器件的截面图，其中，在化学镀镍已经利用光致抗蚀剂层沉积在种子层上之后，利用了用于生产该器件的可替换过程并且示出了该器件。
图12A示出了器件的顶视图，其利用了用于生产该器件的可替换过程，并且已经从位于种子层上的化学镀镍层去除了光致抗蚀剂。
图12B示出了器件的截面图，其利用了用于生产该器件的可替换过程，并且已经从位于种子层上的化学镀镍层去除了光致抗蚀剂。
图13A示出了在化学镀镍过程之后以及在被暴露的种子金属被化学蚀刻之后所完成的UBM结构的顶视图。
图13B示出了在化学镀镍过程之后以及在被暴露的种子金属被化学蚀刻之后所完成的UBM结构的截面图。
图14示出了描述各种类型的UBM的抛掷法试验结果的曲线图，其中，化学镀镍的执行显示出了经过次数更多的抛掷才出现失效。
图15示出了描述各种类型的UBM的抛掷法试验结果的曲线图，其中，化学镀镍的执行显示出了在500次抛掷之后的失效率降低。
具体实施方式
公开了底部凸块金属化(UBM)结构，其具有用作种子层的薄膜金属层，种子层用于化学镀镍或化学镀镍合金的沉积。种子层可为粘附化学镀镍的任何材料或金属。金属种子层与化学镀镍层结合的使用产生了提供改善的热机械强度和抛掷法试验性能的底部凸块金属化。这种用于晶片级封装应用的改善的机械性能通过UBM结构固有的低脆性、化学镀镍的改善的附于另外的非导电表面的粘合性，以及用于化学镀镍UBM沉积的优化的设计而获得。
种子层的使用允许将化学镀镍用作器件上的UBM，其不具有适当的最后金属合金作为电接触。例如，公开的具有薄金属种子层的UBM允许将相同的化学镀镍沉积过程用在用作电子器件的电接触的各种金属上，诸如纯铝、铜和金。另外，其提供了化学镀镍附于诸如氧化物、氮化物和聚合物层的非导电表面的优异的粘合性。另外，通过从该过程中消除主要的变化原因，使化学镀镍沉积过程稳定。例如，如果用作未图案化的覆盖层(blanket layer)，则UBM消除了电子器件的各种电接触上的电镀中的变化，而与包含在电子器件中的有源器件的交互作用会导致这样的变化。
至于电子器件，该金属种子层沉积在钝化接触开口上以密封开口并产生用于化学镀镍沉积的优化表面。种子层也可以沉积在钝化接触开口的外部区域并该区域图案化，从而允许化学镀镍的图案化沉积。
为了制备该结构，可以执行两种不同的方法。图3至图6示出了用于形成改进的UBM结构的第一实施方式。首先，如图3A和3B所示，至少一个金属种子层18通过使用溅射或电镀沉积被沉积，并被优化用于预期的化学镀镍沉积。金属种子层18覆盖了钝化层14和最后金属层12。在示范性实施例中，沉积的金属种子层18可由铝铜合金、诸如钛、铝铜合金跟随的其它溅射材料的成层结构，或其它选择用于化学镀镍的沉积的合适的合金组成。
化学镀镍到金属种子层18上的沉积使结构可以更好地密封电子器件的钝化开口和电接触。这产生了较强的电连接，因此改善了倒装芯片或晶片的性能。
另外，薄金属种子层18允许化学镀镍UBM 16沉积在最后金属和脆的结构上，如果不这样，则最后金属和脆的结构太薄以致于不能形成可靠的连接。这使得UBM能够与更多种材料一起使用，该使用更为灵活。
在其它实例中，在化学镀镍沉积前沉积金属种子层，以抑制化学镀镍厚度中的与器件有关的变化。
然后，如图4A和4B所述，光致抗蚀图案被放置在金属层18上。具有光致抗蚀剂20的沉积层覆盖化学镀镍沉积的预期区域。然后利用化学腐蚀剂除掉不受光致抗蚀剂20保护的区域中的不想要的金属。然后，利用用合适的传统光致抗蚀剂除去工艺除去光致抗蚀剂20。这留下了如图5A和5B所示的覆盖钝化开口中的最后金属层12的图案化的金属种子层18。最后，执行化学镀镍沉积过程，因此产生了具有良好的附于最后金属层12的粘合性的UBM 16，并在如图6A和6B所示的器件中提供强电连接。
在示范性实施例中，可将钛或其它溅射材料用作具有约200到5000埃厚度的粘附。在其它示范性实施例中，铝铜合金可用作具有约2000到20000埃厚度的化学镀Ni的种子金属。在其它示范性实施例中，化学镀镍可具有0.5微米到50微米的厚度。典型地，图案化种子层将为圆形，并大于钝化开口。但是，具体的直径将根据期望的凸块高度变化。
在图10至13示出的可替换实施例中，完成钝化层14上的至少一个金属种子层18的溅射沉积，以优化预期的化学镀镍沉积。如图10A和10B所述，用覆盖将由化学镀镍沉积保护的区域的光致抗蚀剂20沉积光致抗蚀图案。
然后，利用处于适当位置的光致抗蚀剂20完成化学镀镍沉积过程。之后，用适当的光致抗蚀剂除去过程除去光致抗蚀剂20。最后，利用化学腐蚀剂除去不想要的种子金属，其中将沉积的化学镀镍用作保护掩模层。这提供了具有附于最后金属层12的良好的粘合性的UBM 16，并提供了与图6A和6B示出的器件相似的强电连接。
图7至9示出了允许将化学镀镍的设计优化为用于在冲击和抛掷法试验中具有改善的机械性能的底层结构的过程。金属种子层18在钝化层14上生成。然后，图案化的光致抗蚀结构20在金属种子层上生成。在该实施例中，图案化的光致抗蚀层20包括交叠在钝化开口上的部分，以及交叠在钝化层14上的部分。然后，金属种子层18和随后的化学镀镍UBM不仅交叠在钝化开口15中的最后金属12上，也交叠在钝化层14的部分上。通过允许将UBM放置在钝化层14的部分上，该器件的热机械强度变得更大。
尽管此处描述了采用参照图6至9示出和讨论的圆形几何形状或示范的几何形状，但是在不背离本公开的精神和范围的情况下，UBM和种子层可使用可替换的几何形状。通过示范性实施例，用正方形几何形状可以限定一个或多个结构。另外，在第60/913337号美国临时专利申请(ALVARADO等人的标题为BumpInterconnect for Improved Mechanical and Thermo-MechanicalPerformance(用于改善的机械和热机械性能的凸块互连))中，可找到可采用的几何形状的实例，上述所列专利参考文献通过引用方式结合于此，至少涉及其封装应用、结构和制造方。
另外，通过允许该过程形成其它用于UBM的几何结构，化学镀镍UBM的尺寸可以根据预期的凸块应用而适当地制造，这与电子器件的钝化开口或电接触的尺寸无关。可替换地，其它结构也可以。例如，可构成假凸块(dummy bump)或其它需要的结构。另外，该过程允许在具有多种钝化接触开口尺寸的情况下在电子器件上形成均匀的一定大小的化学镀镍图案。
联合电子设备工程会议(JEDEC)JESD22-B1 11标准提供了评估倒装芯片或晶片级芯片经受机械冲击的能力的方法，所述机械冲击是指在便携装置掉落时其中的半导体器件将经历的机械冲击。因为这些器件将用在移动电话和个人数字助理(PDA)中，因此这是重要的。消费者可能多次掉落这些装置，但是消费者又希望这些装置能够继续工作。JEDEC要求这些装置必须至少经受30次掉落而不失效。
图14和15示出了根据以上描述制成的示范性UBM结构的测试结果。这些通过化学镀镍形成的结构在第一次失效之前至少能够承受400次掉落。另外，在经过500次掉落后，化学镀镍器件呈现小于5％失效的失效率。传统的只具有溅射UBM的器件较快失效，在一个实例中第一次失效是在200次掉落以内出现的，在另一个示范性实例中，只在刚刚超过JEDEC规格的30次掉落时就出现第一次失效。传统的溅射器件也具有高得多的失效百分比，其500次掉落之后的失效率比化学镀镍UBM高超出20％。目前公开的结构提供改善的热机械稳定性，同时还具有溅射金属UBM器件所具有的电稳定性的益处。另外，对于不同形状的器件结构，当具有此处描述的几何形状时也提高了热机械稳定性。
虽然已经根据目前认为是最实用的方式和优选实施例描述了特定的示范性结构和方法，但可以理解，不必将本公开限制为公开的实施例。本发明旨在覆盖包括在本发明权利要求的精神和范围内的各种修改和相似的布置，其范围应与最广的解释一致，以便包括所有这种修改和相似的结构。本发明包括所附权利要求的任何和所有实施例。

Claims (10)

1.底部凸块金属化(UBM)结构，包括：
半导体基板，具有形成在其上的钝化层以及多个通过所述钝化层中的开口暴露的最后金属层；
金属种子层，形成在暴露所述最后金属层的每个所述钝化开口上并延伸超出每个所述钝化开口；
所述金属种子层形成在用于电子器件的终钝化层中的非导电材料上，诸如氮化物、氧化物或各种聚合物；
金属化层，由位于所述金属种子层上的化学镀沉积形成。
2.根据权利要求1所述的UBM结构，其中，所述金属种子层在化学镀镍沉积之前沉积，以抑制化学镀镍厚度的与器件有关的变化。
3.根据权利要求1所述的UBM结构，其中，在所述化学镀镍UBM沉积之前沉积所述金属种子层，以密封所述电子器件的所述钝化开口和电接触。
4.根据权利要求1所述的UBM结构，其中，所述金属种子层在所述化学镀镍UBM之前被沉积，以便其尺寸根据预期的凸块应用而制造，并且在热机械性能上被优化，其与所述电子器件的所述钝化开口或电接触的尺寸和形状无关。
5.根据权利要求1所述的UBM结构，其中，沉积金属种子层以使所述化学镀镍能够用在所述器件的晶片上的非常薄的最后金属和脆性结构上。
6.一种底部凸块金属化(UBM)结构，包括：
半导体基板；
至少一个最后金属层，
其中，所述至少一个最后金属层形成在所述半导体基板的至少一部分上；
钝化层，
其中，所述钝化层形成在所述半导体基板的至少一部分上，
其中，所述钝化层包括多个开口，
其中，所述钝化层由非导电材料形成，
其中，所述至少一个最后金属层通过所述多个开口暴露；
金属种子层，
其中，所述金属种子层形成在所述钝化层上并覆盖所述多个开口；
金属化层，
其中，所述金属化层形成在所述金属种子层上，
其中，所述金属化层由化学镀沉积形成。
7.根据权利要求6所述的UBM结构，其中，所述金属种子层在所述化学镀镍沉积之前沉积，以抑制化学镀镍厚度的与器件有关的变化。
8.根据权利要求6所述的UBM结构，其中，所述金属种子层被沉积以在化学镀镍UBM的沉积之前密封所述钝化层中的多个开口以及所述电子器件的电接触。
9.根据权利要求6所述的UBM结构，其中，所述金属种子层在化学镀镍UBM之前被沉积以便其尺寸根据预期的凸块应用而制造，并且在热机械性能上被优化，其与所述电子器件的所述钝化开口或电接触的尺寸和形状无关。
10.根据权利要求6所述的UBM结构，其中，沉积金属种子层以使化学镀镍能够用在所述器件晶片上的非常薄的最后金属和脆性结构上。
CN200880020888A 2007-06-20 2008-06-20 具有用于化学镀镍沉积的种子层的底部凸块金属化结构 Pending CN101689515A (zh)

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US12/142,415 US20090057909A1 (en) 2007-06-20 2008-06-19 Under bump metallization structure having a seed layer for electroless nickel deposition
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