CN101681120B - 光学单元、照明光学装置、曝光装置、曝光方法以及元件制造方法 - Google Patents

光学单元、照明光学装置、曝光装置、曝光方法以及元件制造方法 Download PDF

Info

Publication number
CN101681120B
CN101681120B CN200880018312.8A CN200880018312A CN101681120B CN 101681120 B CN101681120 B CN 101681120B CN 200880018312 A CN200880018312 A CN 200880018312A CN 101681120 B CN101681120 B CN 101681120B
Authority
CN
China
Prior art keywords
light
illumination
pattern
exposure
light beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200880018312.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN101681120A (zh
Inventor
谷津修
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN101681120A publication Critical patent/CN101681120A/zh
Application granted granted Critical
Publication of CN101681120B publication Critical patent/CN101681120B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
CN200880018312.8A 2007-10-31 2008-10-30 光学单元、照明光学装置、曝光装置、曝光方法以及元件制造方法 Expired - Fee Related CN101681120B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007282539 2007-10-31
JP282539/2007 2007-10-31
JP2008135020 2008-05-23
JP135020/2008 2008-05-23
PCT/JP2008/070253 WO2009057822A1 (fr) 2007-10-31 2008-10-30 Unité optique, appareil d'éclairage optique, appareil d'exposition, procédé d'exposition et procédé de fabrication de dispositif

Publications (2)

Publication Number Publication Date
CN101681120A CN101681120A (zh) 2010-03-24
CN101681120B true CN101681120B (zh) 2013-03-13

Family

ID=40445528

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880018312.8A Expired - Fee Related CN101681120B (zh) 2007-10-31 2008-10-30 光学单元、照明光学装置、曝光装置、曝光方法以及元件制造方法

Country Status (7)

Country Link
US (2) US20090185154A1 (fr)
EP (1) EP2206018B1 (fr)
JP (1) JP2010004008A (fr)
KR (1) KR20100099140A (fr)
CN (1) CN101681120B (fr)
TW (1) TW200935181A (fr)
WO (1) WO2009057822A1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101547077B1 (ko) 2003-04-09 2015-08-25 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI573175B (zh) 2003-10-28 2017-03-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TW201809801A (zh) 2003-11-20 2018-03-16 日商尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法
TWI395068B (zh) 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
TWI389174B (zh) 2004-02-06 2013-03-11 尼康股份有限公司 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
CN101681125B (zh) * 2007-10-16 2013-08-21 株式会社尼康 照明光学系统、曝光装置以及元件制造方法
WO2010016288A1 (fr) * 2008-08-08 2010-02-11 株式会社ニコン Système optique d'éclairage, appareil d'exposition et procédé de fabrication de dispositif
JP5474340B2 (ja) * 2008-11-28 2014-04-16 浜松ホトニクス株式会社 光変調装置
WO2010061884A1 (fr) 2008-11-28 2010-06-03 浜松ホトニクス株式会社 Dispositif de modulation de lumière et dispositif de traitement laser
JP5608233B2 (ja) * 2009-07-31 2014-10-15 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学ビーム偏向要素及び調節方法
JP5287695B2 (ja) * 2009-12-22 2013-09-11 株式会社リコー 光偏向装置、光偏向アレー、画像投影表示装置
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
JP2012004465A (ja) 2010-06-19 2012-01-05 Nikon Corp 照明光学系、露光装置、およびデバイス製造方法
CN107636539A (zh) * 2015-05-21 2018-01-26 卡尔蔡司Smt有限责任公司 微光刻投射设备的操作方法
JP2017146496A (ja) * 2016-02-18 2017-08-24 三菱電機株式会社 照明用光源
WO2018066285A1 (fr) * 2016-10-04 2018-04-12 株式会社ニコン Dispositif de balayage de faisceau, dispositif de dessin de motif et procédé d'examen de précision de dispositif de dessin de motif
CN109426091B (zh) 2017-08-31 2021-01-29 京东方科技集团股份有限公司 曝光装置、曝光方法及光刻方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1109067A2 (fr) * 1999-12-13 2001-06-20 Asm Lithography B.V. Dispositif d'illumination
CN1879062A (zh) * 2003-09-12 2006-12-13 卡尔蔡司Smt股份公司 用于微光刻投影曝光设备的照明系统

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US522872A (en) * 1894-07-10 Garden-hoe
US5312513A (en) * 1992-04-03 1994-05-17 Texas Instruments Incorporated Methods of forming multiple phase light modulators
SE0100336L (sv) * 2001-02-05 2002-08-06 Micronic Laser Systems Ab Adresseringsmetod och apparat som använder densamma tekniskt område
JP4401060B2 (ja) * 2001-06-01 2010-01-20 エーエスエムエル ネザーランズ ビー．ブイ． リトグラフ装置、およびデバイス製造方法
US7015491B2 (en) * 2001-06-01 2006-03-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby, control system
US6672722B2 (en) * 2001-06-19 2004-01-06 Intel Corporation Projection engine
US6900915B2 (en) * 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
US20050095749A1 (en) * 2002-04-29 2005-05-05 Mathias Krellmann Device for protecting a chip and method for operating a chip
US6958806B2 (en) * 2002-12-02 2005-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6891655B2 (en) * 2003-01-02 2005-05-10 Micronic Laser Systems Ab High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices
US7095546B2 (en) * 2003-04-24 2006-08-22 Metconnex Canada Inc. Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
EP1668421A2 (fr) * 2003-09-12 2006-06-14 Carl Zeiss SMT AG Systeme d'eclairage pour une installation d'exposition de projection de microlithographie
TWI389174B (zh) * 2004-02-06 2013-03-11 尼康股份有限公司 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
JP4599936B2 (ja) * 2004-08-17 2010-12-15 株式会社ニコン 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
JP4804358B2 (ja) * 2004-09-27 2011-11-02 浜松ホトニクス株式会社 空間光変調装置、光学処理装置、及びカップリングプリズムの使用方法
US20060138349A1 (en) * 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI453795B (zh) * 2005-01-21 2014-09-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
KR101240130B1 (ko) * 2005-01-25 2013-03-07 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 마이크로 디바이스 제조 방법
US7548302B2 (en) * 2005-03-29 2009-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317506B2 (en) * 2005-03-29 2008-01-08 Asml Netherlands B.V. Variable illumination source
US7804603B2 (en) * 2006-10-03 2010-09-28 Asml Netherlands B.V. Measurement apparatus and method
US8937706B2 (en) * 2007-03-30 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and method
US20080259304A1 (en) * 2007-04-20 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1109067A2 (fr) * 1999-12-13 2001-06-20 Asm Lithography B.V. Dispositif d'illumination
CN1879062A (zh) * 2003-09-12 2006-12-13 卡尔蔡司Smt股份公司 用于微光刻投影曝光设备的照明系统

Also Published As

Publication number Publication date
US20110261342A1 (en) 2011-10-27
KR20100099140A (ko) 2010-09-10
EP2206018B1 (fr) 2013-01-16
CN101681120A (zh) 2010-03-24
TW200935181A (en) 2009-08-16
EP2206018A1 (fr) 2010-07-14
JP2010004008A (ja) 2010-01-07
US20090185154A1 (en) 2009-07-23
WO2009057822A1 (fr) 2009-05-07

Similar Documents

Publication Publication Date Title
CN101681120B (zh) 光学单元、照明光学装置、曝光装置、曝光方法以及元件制造方法
CN101685266B (zh) 光学照明装置、曝光装置以及曝光方法
CN103777363B (zh) 照明光学设备、曝光设备、照明方法、曝光方法和装置制造方法
CN100521089C (zh) 光学积分器、照明光学装置、曝光装置、方法及元件制法
US9366970B2 (en) Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
CN101387754A (zh) 投影机曝光装置、曝光方法以及元件制造方法
CN102890425A (zh) 照明光学装置、曝光装置以及元件制造方法
KR20100105649A (ko) 공간 광 변조 유닛, 조명 광학계, 노광 장치, 및 디바이스 제조 방법
JP5700272B2 (ja) 照明光学系、露光装置、およびデバイス製造方法
JP5353408B2 (ja) 照明光学系、露光装置、およびデバイス製造方法
JP5366019B2 (ja) 伝送光学系、照明光学系、露光装置、およびデバイス製造方法
JP2004311742A (ja) 光学系の調整方法、照明光学装置、露光装置、および露光方法
JP5672424B2 (ja) 投影光学系、露光装置、およびデバイス製造方法
JP5604813B2 (ja) 照明光学系、露光装置、およびデバイス製造方法
JP2010182703A (ja) 補正ユニット、照明光学系、露光装置、およびデバイス製造方法
JP2013165196A (ja) 照明光学系、露光装置、およびデバイス製造方法
JP2012080098A (ja) 照明光学系、露光装置、照明方法、露光方法、およびデバイス製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1136647

Country of ref document: HK

C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1136647

Country of ref document: HK

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130313

Termination date: 20201030