CN101641786A - 散热装置和具有散热装置的组合或模块单元 - Google Patents

散热装置和具有散热装置的组合或模块单元 Download PDF

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CN101641786A
CN101641786A CN200780052443A CN200780052443A CN101641786A CN 101641786 A CN101641786 A CN 101641786A CN 200780052443 A CN200780052443 A CN 200780052443A CN 200780052443 A CN200780052443 A CN 200780052443A CN 101641786 A CN101641786 A CN 101641786A
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layer
heat abstractor
balance
cooling
cooling body
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CN101641786B (zh
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恩斯特·哈梅尔
于尔根·舒尔茨-哈德
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Curamik Electronics GmbH
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Electrovac AG
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Abstract

用于冷却构件(6、7)、组件、模块(1)或类似的元件、特别用于冷却电气或电子的部件的散热装置,包括至少一个冷却体(11),其构成至少一个冷却面(11.1)用以连接待冷却的部件并且在该冷却面上由金属材料构成。

Description

散热装置和具有散热装置的组合或模块单元
技术领域
本发明涉及一种按照权利要求1或3的前序部分所述的散热装置以及一种按照权利要求22所述的组合或模块单元。
背景技术
一般通用的和必需的是,对电气或电子的构件或组件并对此特别是对功率构件或功率部件或功率模块进行冷却以排出耗散热,而且分别经由至少一个具有至少一个冷却体的散热装置(冷却器)实现。为此还特别已知这样的散热装置,其中冷却体构成至少一个优选强力分岔的冷却通道结构,其可由输送液态的和/或气态的和/或蒸汽状的热量的介质或冷却介质、例如水流过。
为了尽可能最好的冷却,在这方面在许多情况下至少符合目的的是,这些构件或组件经由一焊接连接与散热装置的冷却体的一外部的冷却面相连接。在这种情况下冷却体至少在其外部的冷却面的区域内由高热导率的金属材料、特别是铜或铝构成。在构件或组件与冷却体之间的焊接连接此外还具有这样的优点,即两个元件可以分开制造并且只在其制造以后才相互连接。
但成问题的是,在相应的冷却体与一组合或模块单元的具有至少一个电构件的部分之间的焊接连接或焊层由于通常经由焊层相互连接的各元件的很不同的热膨胀系数而承受很大的热致机械负载。这在经常的温度变化时是特别明显的,如其例如在在电构件或在电组件中出现的持续的负载交变时,这例如在电驱动控制装置中就是这种情况。该热致机械负载导致焊接连接的过早的老化并且在极端情况下导致该焊接连接的部分的或完全的脱离,并从而导致构件或组件所需的冷却的损失。
已知所谓“DCB方法”(直接铜结合工艺,Direct-Copper-Bond-Technology)例如用于各金属层或金属薄板(例如铜薄板或铜箔)相互连接和/或与陶瓷或陶瓷层相连接,并且在应用金属薄板或铜薄板或金属箔或铜箔的情况下,它们在其表面侧具有一层或一镀层(熔化层),其由由金属和一反应气体优选氧气构成的化学连接构成。在该例如在US-PS 37 44 120或DE-PS 23 19 854中描述的方法中,该层或该镀层(熔化层)构成一低共熔混合物,其熔化温度低于金属(例如铜)的熔化温度,从而通过箔在陶瓷上的加设和通过全部层的加热能够将它们相互连接,更确切地说通过金属或铜基本上只在熔化层或氧化层的区域内的熔化。
这种DCB方法在这种情况下具有例如以下方法步骤:
铜箔的氧化,使其产生一均匀的氧化铜层;
铜箔在陶瓷层上的安装;
将复合结构加热到一在约1025至1083℃之间的过程温度,例如加热到约1071℃;
冷却到室温。
此外已知所谓活性焊接方法(DE 22 13 115,EP-A-153 618)例如用于连接构成金属化(Metallisierung)的各金属层或金属箔(特别是铜层或铜箔)与陶瓷材料的连接。在该方法中,其特别也用于制造金属-陶瓷基板,在一在约800-1000℃之间的温度下通过一硬焊料的应用制造一在金属箔、例如铜箔与陶瓷基板、例如氮化铝-陶瓷之间的连接,该硬焊料除一主成分如铜、银和/或金外还包含一活性金属。该活性金属,其例如是族Hf、Ti、Zr、Nb、Ce中的至少一个元素,通过化学反应制造焊料与陶瓷之间的连接,同时焊料与金属之间的连接是金属的硬焊料连接。
发明内容
本发明的目的是,提供一种散热装置,其避免上述缺点。为了达到该目的,构成一种按照权利要求1或3所述的散热装置。一具有一散热装置的组合或模块单元是权利要求22的目标。
通过在冷却体的所述至少一个冷却面上设置的平衡层,其直接加设在冷却体的金属上,在冷却体和与该冷却体经由焊接连接的各功能元件之间的不同的热膨胀系数的有效的平衡取得一组合或模块单元,特别是也在金属的冷却体与一与其经由焊接连接的金属-陶瓷基板或与另一基板或中间载体之间的不同的热膨胀系数的有效平衡,该中间载体由一不同于冷却体的材料构成,例如由一材料或金属构成,它们具有一相对于冷却体减小的热膨胀系数。
由各实施例的以下描述和附图得出本发明的进一步构成、优点和应用可能性。对此全部描述的和/或图解示出的特征本身或以任何的组合是本发明的基本的目标,而与它们在各权利要求中的归纳或其引用关系无关。各权利要求的内容也构成说明书的组成部分。
附图说明
以下借助附图对各实施例更详细地说明本发明。其中:
图1在散热装置的冷却体上设置的电子功率模块的示意图;
图2和3在模块接通或激活时功率模块随时间变化的温度分布(图2)和在模块断开或不起作用时功率模块随时间变化的温度分布(图3)的时间的温度变化,而且在不同的冷却方法中;
图4按照本发明模块的结构的示意图;
图5-7本发明的其他的实施形式的示意图。
具体实施方式
图1中电气或电子功率模块1基本上由陶瓷-金属基板2、亦即DCB(Direct Copper Bonded)基板构成,其包括陶瓷层3和在陶瓷层两侧的金属化4、5。金属化4和5例如分别由铜箔构成,其借助于DCB技术面状地加设到陶瓷层3的相关表面侧上。陶瓷层3例如由一氧化铝陶瓷(Al2O3陶瓷)或一氮化铝陶瓷(AlN陶瓷)构成。陶瓷层3的厚度例如处在0.2与2mm之间的范围内。
在陶瓷层3的上面上的金属化4构造成用于形成导体线路、接触面等。在金属化4上此外设置电子构件,而且例如以电子开关元件(IGBT)形式的功率构件6以及其他的用于控制的构件7。构件6和7设置在一封闭的壳体8内,其例如由塑料构成。壳体8的内腔9浇铸有合适的材料。为了模块1的供电和控制,在壳体8的上面上引出各相应的接头10。
为了冷却模块1,将其设置在一在图1中总体用11标记的冷却体11上,该冷却体作为散热装置用于排出由模块1产生的损耗热并且金属化5以确保良好的传热的方式经由焊层12与冷却体相连接。冷却体11构成板形的或方形的,而且构成有一上面11.1、一下面11.2、两个纵向侧面11.3和端面11.4、11.5,端面11.4、11.5与各纵向侧面11.3一起构成冷却体11的周缘面。
图2和3首先原则性示出模块1和因此同样构成模块1的基础的陶瓷-金属基板2在模块激活或接通时(图2)和在模块1断开或不起作用时(图3)的温度/时间变化,更确切地说分别对于空气冷却的冷却体11(曲线LK)和液体或水冷却的冷却体11(曲线WK)。
如图2中所示,在空气冷却的冷却体11中温度T随着时间t缓慢地升高至工作温度,而在水冷却的冷却体11中实现较陡的温度升高,其温度梯度、即温度随时间t的变化(温度/时间微分)是较陡变的。在模块1不起作用时的温度变化是类似的,亦即在空气冷却的冷却体11中在模块不起作用以后温度T较缓慢且持续地降低,而在液体冷却的冷却体11中发生很陡的温度变化,亦即在模块不起作用时温度梯度(温度与时间t相关的变化)也显著地大于在空气冷却的冷却体11中的温度梯度,此时绝对的冷却功率在水冷却的冷却体11中当然是显著较高的。
图4中以e·10-6/°K标出对于不同的材料说明的热膨胀系数,更确切地说对于铝、硅、铜、氮化铝陶瓷(AlN)、氧化铝陶瓷(Al2O3),对于具有氧化铝陶瓷的DCB基板(Al2O3-DCB基板)和对于具有氮化铝陶瓷的DCB基板(AlN-DCB基板)。由于对于冷却体按照冷却体11通常采用具有高热导率的金属、亦即铜或铝,由图4的视图可看出,在根据图1的由模块1和冷却体11构成的模块结构或模块装置中仅仅由于基板2和例如由铜构成的冷却体11的不同的热膨胀系数e就在模块装置内产生很大的应力,该应力基本上在焊层12中起作用,亦即由焊层承受和部分地被消除。为了达到最好的冷却作用,焊层12是尽可能薄的。焊层的厚度例如只为0至300mμ。
如果现在模块1不处于持续操作,而处于转换操作或断续的操作,如其例如在一用于驱动装置等的控制或转换的模块中通常就是这种情况,则在焊层12中产生很大的持续交变的机械应力,其特别在一水或液体冷却的冷却体11中引起焊层12的一高的冲击负载。这可能导致模块1与冷却体11之间的焊接连接的破坏并从而由于缺乏充分的冷却而最后导致模块1的破坏。
因邻接的陶瓷-金属基板2和冷却体11的不同的热膨胀系数引起的焊层12的负载随着该焊层的厚度的减小而增大并且还与焊层12的焊料的组分相关。如果对于焊层采用无铅的焊料,则焊层12的负载是特别高的,如由于减轻环境负担的原因越来越要求这种焊料。这样的无铅焊料例如是SnAg5、SnCu3。
为了避免这样的缺点,按照图5,冷却体11在其待与基板1连接的上面11.1或冷却面上设有平衡层13,该平衡层由具有高热导率的和具有相对于铜和铝减小的热膨胀系数e的材料构成,亦即由具有热膨胀系数e小于10×10-6/°K的材料构成。平衡层13(其具有一大于100W/mk的热导率并且其厚度例如处在0.05与2mm之间的范围内)在没有任何的中间层的情况下,即直接地加设在冷却体11上或在该冷却体11的金属(例如铜)上并且例如由Mo、W、Mo-Cu、W-Cu、Cu-金刚石和/或Cu-CNF(铜-碳纳米管或铜-碳纳米纤维)构成。
利用中间层或平衡层13,特别是陶瓷-金属基板和冷却体11的热膨胀系数在它们之间的连接区域内、亦即在焊层12的两侧达到均衡。由于陶瓷-金属基板2的热膨胀系数e此外与陶瓷层3的厚度相关,所以优选使得平衡层13的厚度与陶瓷层3的厚度相适配,使得“平衡层13的厚度/陶瓷层3的厚度”的比值处在1.3与0.25之间的范围内。在本发明的一优选的实施形式中平衡层13的厚度处在0.05与3mm之间的范围内。
利用适当的表面处理,例如通过电镀例如爆炸电镀、通过金属冷喷镀(Kaltspritzen)、通过热金属喷镀例如熔化床喷镀、火焰冲击喷镀、火焰喷镀、电弧喷镀、等离子喷镀等实现平衡层13在冷却体11的金属表面上的加设。
通过平衡层13实现在焊层12的两侧设置的各元件的热膨胀系数的平衡,并且特别是在模块1的停止操作和进行操作以及由此产生的模块1和陶瓷-金属基板的持续的温度变化时也实现焊层12的卸载。这样的卸载特别是由于在一激活的散热装置中的高的温度梯度是特别有利的,亦即在这样的散热装置中是特别有利的,即其在其冷却体11内包括由气态的和/或蒸汽状的和/或液态的介质流过的冷却通道并且其为了一尽可能最好的冷却这样构成,即在内部与冷却介质处于接触的热交换面或冷却面是显著地较大的,例如比外部的与模块1处于连接的冷却面大至少2倍或4倍。
为了达到对称的构成,特别是也关于温度状况对称的构成,冷却体11还在其远离模块1的下面上设有一相应于平衡层13的附加的层13a,该层13a在这种情况下优选具有与平衡层13相比较大的厚度。
图6示出一装置14的简化图,该装置14再次包括陶瓷-金属基板2(其例如是一在该图中未更详细示出的模块的构件)以及与陶瓷-金属基板2经由一焊接连接(焊层12)连接的冷却体11,冷却体11至少在其与陶瓷-金属基板连接的表面侧上由铜制成。在冷却体11上再次加设中间层或平衡层13。与图5的实施形式不同,在层13上加设另一中间层15,该中间层由镍或镍合金、例如镍银合金或一种其它的合金构成,其包含至少一种金属,该金属也是焊层12的焊料的成分,焊层12与中间层15邻接并且将该中间层和由此冷却体11与陶瓷-金属基板相连接。
图7示出冷却体11连同一激光金属条16的放大的部分视图,该激光金属条以其纵向延长垂直于图7的图平面定向并且具有大量发射激光的发射体,它们沿激光金属条纵向方向相互位错设置。冷却体11再次构成板形的或方形的,并且具有上面11.1、下面11.2、各纵向侧面11.3以及端面11.4和11.5。激光金属条16在上面11.1上设置在一端面11.5的区域内,而且激光金属条16以其纵向延长平行于该端面和平行于上面11.1,亦即垂直于图7的图平面定向并且以其激光发射侧面大致与端面11.5齐平。
至少在端面11.5的区域内在上面11.1上和在下面11.2上再次加设一平衡层13。在上面11.1上的平衡层13上焊接一设有一板形中间载体17的激光金属条16,而且经由在平衡层13与中间载体17(次黏着基台(Submount))之间设置的焊层18焊接。激光金属条16与中间载体17之间的连接同样由一焊层19构成,而且使激光金属条以其激光发射侧面与在激光金属条16的全长上延伸的中间载体17的纵向侧面或纵向边缘齐平,但中间载体17以其另一纵向侧面伸出于激光金属条16的背面。
通过平衡层13在该实施形式中也达到在由铜或铝构成的冷却体11和由Cu-Mo构成的中间载体17的不同的热膨胀系数之间的平衡并从而达到焊层18的卸载。为了得到特别是热对称的构成,对置于平衡层13在下面11.2上加设一相应的层13a,而且使层13a的厚度大于平衡层13的厚度,但小于平衡层13和中间载体17的厚度的总和。
以上本发明对各实施例进行描述。当然,许多变化和改变是可能的,只要不背离基于本发明的发明构想。
例如对于平衡层13和/或对应层13a,其也可以由被溅镀的陶瓷或高强度的金属构成。
此外特别也有可能,将平衡层13和/或对应层13a制成为复合层,而且是单层的或多层的,其中例如每一层由多种不同的材料、例如由不同的金属或不同金属的合金构成,或例如不同的层由不同的材料或材料混合物(例如金属合金)构成,它们然后例如也用不同的方法加设。例如有可能的是,将一金属层(例如Cu层)通过冷喷镀加设,而将另一层(例如陶瓷层)通过等离子喷镀加设。
可以例如通过CVD(化学气相沉积)加设由金刚石、碳和/或碳-纳米纤维构成的特别的层,其中这些层紧接着可用Cu-粉末-冷气体进行涂层。
冷却体11也可以是一所谓热管的组成部分,其中在这种情况下层13和/或13a也用于密封在泄漏方面的危险区域并且只由此已有助于改善组合或模块单元的使用寿命。
附图标记清单
1     模块
2     陶瓷-金属基板,特别是陶瓷-铜基板
3     陶瓷层
4,5  金属化,特别是铜层
6,7  电子构件
8     模块壳体
9     壳体的内腔
10    接头
11    冷却体或散热装置
11.1  上面
11.2  下面
11.3  纵向侧面
11.4,11.5   端面
12    焊层
13    平衡层
13a   附加的层
14    装置
15    中间层
16    激光金属条
17    中间载体或次黏着基台
18,19焊层

Claims (36)

1.用于冷却构件(6、7)、组件、模块(1)或类似的元件、特别用于冷却电气或电子元件的散热装置,包括至少一个冷却体(11),所述冷却体构成至少一个冷却面(11.1)用以连接待冷却的元件并且在所述冷却面上由金属材料构成;其特征在于,
冷却体(11)至少在所述至少一个冷却面(11.1)上设有至少一个直接加设到所述冷却面上的至少单层的平衡层(13),所述平衡层具有大于100W/m°K的热导率和小于10×10-6/°K的热膨胀系数。
2.按照权利要求1所述的散热装置,其特征在于,平衡层(13)包含至少一个由Mo、W、Mo-Cu、W-Cu、Cu-CNF和/或Cu-金刚石构成的层。
3.用于冷却构件(6、7)、组件、模块(1)或类似的元件、特别用于冷却电气或电子元件的散热装置,包括至少一个冷却体(11),所述冷却体构成至少一个冷却面(11.1)用以连接待冷却的元件并且在所述冷却面上由金属材料构成;其特征在于,
冷却体(11)至少在所述至少一个冷却面(11.1)上设有至少一个直接加设到所述冷却面上的至少单层的平衡层(13),并且平衡层(13)或平衡层的至少一个层由Mo、W、Mo-Cu、W-Cu、Cu-CNF、Cu-金刚石、碳和/或碳-纳米纤维构成。
4.按照权利要求3所述的散热装置,其特征在于,平衡层(13)或平衡层(13)的至少一个层具有大于100W/m°K的热导率和小于10×10-6/°K的热膨胀系数。
5.按照上述权利要求之一项所述的散热装置,其特征在于,冷却体(11)至少在一对置于所述至少一个冷却面(11.1)的侧面(11.2)上设有一相应于所述至少一个平衡层(13)的至少单层的附加的层(13a)。
6.按照上述权利要求之一项所述的散热装置,其特征在于,平衡层(13)和/或所述附加的层(13a)制成为由不同的材料和/或由多个单层构成的复合层,其中各单层例如至少部分地通过冷气体喷镀加设。
7.按照上述权利要求之一项所述的散热装置,其特征在于,将平衡层(13)和/或附加的层(13a),或平衡层(13)和/或所述附加的层(13a)的至少一个层,通过电镀、特别是爆炸电镀、通过冷喷镀、通过金属粉末-冷气体-镀层、通过热喷镀或溅镀加设到冷却体(11)上或所述平衡层(13)和/或所述附加的层(13a)的一在那里已设置的层上。
8.按照上述权利要求之一项所述的散热装置,其特征在于,将所述平衡层(13)和/或所述附加的层(13a),或所述平衡层(13)和/或所述附加的层(13a)的至少一个层,通过CVD加设到冷却体(11)上或所述平衡层(13)和/或所述附加的层(13a)的一在那里已设置的层上。
9.按照上述权利要求之一项所述的散热装置,其特征在于,所述冷却体(11)关于一平行于所述至少一个冷却面(11.1)延伸的平面在层序列和/或材料序列方面构成对称的或基本上对称的。
10.按照上述权利要求之一项所述的散热装置,其特征在于,冷却体(11)至少在所述至少一个冷却面(11.1)的区域内由铜或铝制成。
11.按照权利要求10所述的散热装置,其特征在于,冷却体(11)连贯地由铜或铝构成。
12.按照权利要求10所述的散热装置,其特征在于,冷却体(11)由多个相互连接的板或层、例如由多个利用DCB方法相互连接的板或层构成。
13.按照上述权利要求之一项所述的散热装置,其特征在于,设有至少一个在冷却体(11)中构成的、可被冷却介质流过的冷却通道。
14.按照权利要求13所述的散热装置,其特征在于,由所述至少一个冷却通道构成的内部的冷却面比所述至少一个外部的冷却面(11.1)大至少2倍、优选4倍。
15.按照上述权利要求之一项所述的散热装置,其特征在于,该散热装置构成为热管。
16.按照上述权利要求之一项所述的散热装置,其特征在于,在所述至少一个平衡层(13)上加设另一金属层(15)。
17.按照权利要求16所述的散热装置,所述另一金属层(15)包含至少一种金属,其也是焊层(12、18)的成分,至少一个元件(1、16)与冷却体(11)通过所述焊层相连接。
18.按照上述权利要求之一项所述的散热装置,其特征在于,所述至少一个平衡层的厚度处在0.05mm与2mm之间的范围内。
19.按照上述权利要求之一项所述的散热装置,其特征在于,在至少两层的平衡层(13)和/或至少两层的附加的层(13a)的情况下通过金属冷喷镀加设一金属的单层。
20.按照权利要求19所述的散热装置,其特征在于,所述平衡层(13)和/或所述附加的层(13a)包括至少一个等离子喷镀的或溅镀的陶瓷层和至少一个冷气体喷镀的金属层、例如Cu层。
21.按照上述权利要求之一项所述的散热装置,其特征在于,所述至少一个平衡层(13)和/或所述至少一个附加的层(13a)具有由CVD沉积的金刚石、碳和/或碳-纳米纤维构成的单层和至少一个通过冷喷镀和/或通过化学沉积构成的金属单层、例如Cu单层。
22.组合或模块单元,其包括至少一个散热装置,其特征在于,所述的散热装置按照上述权利要求之一项构成。
23.按照权利要求22所述的组合或模块单元,其特征在于,在所述至少一个至少单层的平衡层(13)或在该平衡层上加设的另一层(15)上经由焊层(12、18)固定一元件例如构件(16)或模块(1)或基板或载体(2、17)。
24.按照权利要求23所述的组合或模块单元,其特征在于,焊层的厚度最大为300mμ。
25.按照权利要求23或24所述的组合或模块单元,其特征在于,焊层(12)的厚度小于所述至少单层的平衡层(13)的厚度。
26.按照上述权利要求之一项所述的组合或模块单元,其特征在于,载体是陶瓷-金属基板(2),其包括一陶瓷层(3)和在陶瓷层(2)的各表面侧上的金属化(4、5),并且一个金属层经由焊接连接与散热装置或冷却体(11)相连接。
27.按照权利要求24所述的组合或模块单元,其特征在于,陶瓷-金属基板是DCB基板。
28.按照权利要求22或23所述的组合或模块单元,陶瓷层由氧化铝陶瓷或氮化铝陶瓷构成。
29.按照上述权利要求之一项所述的组合或模块单元,其特征在于,通过活性焊接方法的应用制造陶瓷-金属基板。
30.按照上述权利要求之一项所述的组合或模块单元,其特征在于,冷却体(11)在一对置于陶瓷-金属基板(2)的表面侧上设有一相应于平衡层的至少单层的附加的层(13a),并且所述附加的层(13a)优选具有一厚度,其大于平衡层(13)的厚度。
31.按照上述权利要求之一项所述的组合或模块单元,其特征在于,陶瓷-金属基板是一电子的功率开关电路或模块(1)的组成部分。
32.按照上述权利要求之一项所述的组合或模块单元,其特征在于,所述至少一个构件是至少一个激光器二极管或至少一个激光金属条(16),它们经由至少一个焊接连接(18、19)安装在平衡层(13)上。
33.按照权利要求32所述的组合或模块单元,其特征在于,所述至少一个激光二极管或所述至少一个激光金属条(16)固定例如钎焊在一板形的中间载体(17)或次黏着基台上,并且中间载体(17)经由一焊层(18)与在冷却体(11)上的平衡层(13)相连接。
34.按照上述权利要求之一项所述的组合或模块单元,其特征在于,对置于平衡层(13)设置一相应于平衡层的优选材料相同的对应层(13a)。
35.按照权利要求34所述的组合或模块单元,其特征在于,对应层(13a)的厚度大于平衡层(13)的厚度。
36.按照上述权利要求之一项所述的组合或模块单元,对应层(13a)的厚度最大等于平衡层(13)的厚度和中间载体(17)或次黏着基台的厚度的总和。
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