CN101632160B - 用于高温应用的焊料凸点/凸点下金属结构 - Google Patents

用于高温应用的焊料凸点/凸点下金属结构 Download PDF

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CN101632160B
CN101632160B CN200780045879XA CN200780045879A CN101632160B CN 101632160 B CN101632160 B CN 101632160B CN 200780045879X A CN200780045879X A CN 200780045879XA CN 200780045879 A CN200780045879 A CN 200780045879A CN 101632160 B CN101632160 B CN 101632160B
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layer
alloy
metal
gold
interconnected
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CN101632160A (zh
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迈克尔·E·约翰逊
托马斯·施特罗特曼
琼·弗尔蒂斯
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Huatian Technology Kunshan Electronics Co Ltd
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FlipChip International LLC
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Abstract

本发明提供了用于在250℃及以上的温度进行操作的焊料凸点结构，其包含UBM结构上的焊料凸点。根据第一实施方式，该UBM结构包含Ni-P层、Pd-P层和金层，其中Ni-P和Pd-P层作为屏障层和/或可焊接/可粘结层。金层作为保护层。根据第二实施方式，该UBM结构包含Ni-P和金层，其中Ni-P层作为扩散屏障层以及可焊接/可粘结层，而金层作为保护层。根据第三实施方式，该UBM结构包含：(i)金属薄层，例如钛或铝或Ti/W合金；(ii)金属，例如NiV、W、Ti、Pt、TiW合金或Ti/W/N合金；以及(iii)金属合金，例如Pd-P、Ni-P、NiV、或TiW，接着为金层。可替代地，金、银、或钯凸点可以用于替代UBM结构中的焊料凸点。

Description

用于高温应用的焊料凸点/凸点下金属结构
技术领域
本发明公开内容大体上涉及电子产品封装，并且更具体地，涉及其上形成有焊料或互连凸点的凸点下金属层(under bumpmetallurgy，UBM)。
背景技术
用于简化IC的封装和互连的利用焊料凸点阵列集成电路(IC)封装(例如倒装芯片装配、芯片级封装、以及球栅阵列结构)的表面安装技术在半导体工业中是公知的，该IC例如是包括发光二极管(LED)的IC。通常，一系列形成在IC封装的表面上或其他衬底表面上的环状(如前文所述，或三维的半球形)焊料凸点与形成于其中的有源器件或无源器件接触或贴附在这些衬底上。然后将这样的焊料凸点与形成在第二衬底上的相应图案中的焊盘对齐，其中第一衬底被安装在第二衬底上。前述的焊料凸点通常形成在半导体晶片(例如Si或GaAs)上，该半导体晶片例如是硅衬底(siliconsubmount)或其他衬底。通常，在晶片的上表面上形成绝缘层或钝化层，以及一系列暴露的导电焊盘(称为I/O焊盘)可通过形成在钝化层中的通孔。
通常，每一个焊料凸点都形成在I/O焊盘的顶部，其通常由铝敷镀金属形成，但是也可以使用其他金属诸如铜，在一些情况下也可以使用金。在形成焊料凸点的过程中，通常首先在器件敷镀金属之上形成UBM的结构，而焊料凸点随后形成在该UBM结构顶部上。
利用焊料凸点的器件的热性能会受到焊料凸点结构耐热性的限制，该焊料凸点结构包括焊料凸点及其所结合的UBM结构。更具体地，常规的焊料凸点结构不能在高温(例如接近或高于250℃)下进行令人满意的操作，这通常是由于焊料凸点结构中的不希望的扩散和/或其他不希望的热性能。
由于热稳定性和/或性能不足，现有的焊料凸点接头不能够承受在高功率器件中通常存在的相当高的操作温度。而且，现有的高温焊料含有污染与焊料凸点结构相连的电子器件的其他部分的金属。例如，在LED器件中，这样的污染物的扩散会不希望地改变发光的颜色。
此外，装置的长期连续使用会导致焊料凸点结构的热不稳定性，甚至是在较低的温度下也会这样，这取决于所使用的材料。即使认为现有的焊料凸点结构在低温操作中是热稳定的，由于其在更高温度下缺少足够的稳定性和/或性能，因此也不能转用于高温应用。
因此，需要一种改进的焊料凸点结构，其热稳定性更高且在较高温度操作下具有更好的性能，并且能够用于操作温度为约250℃或更高的电子产品封装(例如LED IC封装)中的互连应用。
附图说明
为了更加完整地理解本发明披露内容，现参照以下附图进行描述，其中，在所有附图中相同的标号代表相同的部件：
图1至图5图示说明了利用镀覆形成的UBM结构。
图6至图9图示说明了利用溅射沉积和镀覆形成的UBM结构。
图10和图11图示说明了在器件敷镀金属(device metallization)上经由溅射形成的UBM结构。
图12图示说明了具有焊料凸点的焊料凸点结构，该焊料凸点形成在UBM结构上。
本文中的举例说明示出了特定的实施方式，而这样的实施方式不是要以任何方式限制本发明。
具体实施方式
以下说明书和附图说明了足以让本领域技术人员能够实施本文所描述的结构和方法的特定实施方式。其他实施方式可结合结构、方法和其他改变。实施例仅仅代表可能的变型。
本发明公开内容提供了具有形成在支持UBM结构上的焊料凸点(或由除下文所描述的焊料之外的材料构成的凸点)的互连凸点结构。如以下的若干个实施方式所述，与现有的焊料凸点结构相比，该互连或焊料凸点结构通常具有改善的热稳定性，并且还能够在250℃或更高，更优选高于300℃的操作温度下进行较长时间的操作。该焊料凸点结构利用多层UBM结构，该UBM结构能够抵抗不希望的扩散并保护器件敷镀金属，同时提供该焊料与器件敷镀金属之间的良好附着/结合。在选择用于UBM结构的各层的材料时，希望所选择的材料提供能够抵抗不期望的扩散的一个或多个层，其中扩散会导致有缺陷的互连。
在第一实施方式中，UBM结构包括Ni-P层、Pd-P层和金层。Ni-P层和Pd-P层作为扩散屏障层和/或可焊接/可粘结层。上面的金层作为保护层以防止下面的金属在凸点贴附过程之前被氧化。
在第二实施方式中，UBM结构包括Ni-P层和金层。Ni-P层作为扩散屏障层和/或可焊接/可粘结层。上面的金层作为保护层。
在第三实施方式中，UBM结构包括：(i)具有良好导电性和附着力的金属薄层(例如钛、铝、或Ti/W合金)；(ii)屏障金属层(例如NiV、W、Ti、Pt、Ti/W合金或Ti/W/N合金)，其作为屏障金属并且被选择以与将使用的所选择的焊料合金是可润湿的；以及(iii)位于屏障金属层上的额外金属层(例如Pd-P、Ni-P、NiV或Au)。可替代地，可以具有位于屏障金属层之上的金属或合金第二额外层。可以利用上述列出的用于形成屏障金属层的材料中的一种来形成该第二额外层。上面的金层作为保护层。
在UBM结构上形成的互连凸点或焊料凸点可由以下材料中的一种或多种形成：PbSbGa、PbSb、AuGe、AuSi、AuSn、ZnAl、CdAg、GeAl、Au、Ag、Pd、Pb、Ge、Sn、Si、Zn、Al或前述材料的组合。作为焊料凸点的一种可替代材料，在其他实施方式中，金或银凸点可以位于本文中描述的与这样的金或银材料的应用相容的任意的UBM金属或合金之上。
应该注意到，在上述的可焊接/可粘结处，所指的(一个或多个)层适合于焊接以及金属线粘结。这些表面即使是在焊接凸点的高温组装后也仍适合金属线粘结。
UBM结构的形成
UBM结构通常以晶片级形成在器件或硅衬底(siliconsubmount)或其他衬底敷镀金属之上。大多数器件的敷镀金属通常为铝，尽管也可以使用其他金属，例如铜，以及较少用的金。UBM结构可以是多层的，且可以包括个别的粘附层、催化剂层、屏障层、可焊接/可粘结层、表面保护层、和/或具有这些特性的组合的层。
UBM结构可以是例如通过薄膜金属溅射法或通过浸渍、化学镀、或电解法，或通过溅射和镀覆的组合而形成的。尽管本文中所描述的特定实施方式利用镀覆和溅射，但用于在UBM结构中形成一个或多个层的其他适合的制造方法(例如蒸发、印刷等)也可以使用。
利用镀覆形成UBM结构
以下描述利用镀覆技术形成UBM结构的五个不同的、非限制性的实施例。在每一个实施例中，最初经由浸渍镀将催化剂薄层沉积在器件敷镀金属的表面上。应注意，在图1至图5中，为了简化图示说明，未示出UBM结构的牺牲金属层和催化剂层。以下的实施例为示意性实施例。
实施例1
参见图1，UBM结构200的初始层形成在器件201的敷镀金属表面202上，其中敷镀金属表面通常为铝或铜。出于举例说明的目的，示出了一个具有围绕的钝化层203的器件敷镀金属表面202的I/O焊盘。
该初始层是牺牲金属或催化剂的薄层，其经由浸渍镀而沉积在敷镀金属表面202上。如果器件具有铝敷镀金属，则沉积的金属是锌(牺牲金属层)。如果器件敷镀金属是铜，则沉积的金属是钯(用于进一步镀覆的催化剂)。
应该注意到，本发明公开内容中提到将Pd用作催化剂，在最终的UBM结构中Pd仍为一非常薄的层。然而，本发明公开内容中提到将锌用作牺牲层，在最终的UBM结构中基本不存在Zn层。而且，当将衬底/晶片放进入化学镀Ni镀槽中时，Zn立即被溶解并回到溶液中，随即镍镀开始。锌层最适合被描述为用于保护铝不被氧化的牺牲层。在Ni槽中将Zn层除去后，就暴露出干净的(未被氧化)的Al。Ni能够镀在干净的Al上，却不能镀在被氧化的Al上。
在沉积金属催化剂层或牺牲层之后，形成含P的镍-磷(Ni-P)合金的层204。该合金中含P的范围为按重量计约1-16％，且更优选的范围为约7-9％，并且可经由化学镀方法来沉积。在一些情况下，合金中P的百分比可以小于1％。Ni-P沉积物的厚度范围为0.1-50微米，且更优选地为1-5微米的范围。在Ni-P沉积之后，经由浸渍镀方法沉积钯金属催化剂薄层(未示出)。
接着，形成钯-磷(Pd-P)合金的层206。该合金中含P的范围为约0.1-10％，且更优选的范围为约0.1-5％，并且可经由化学镀方法来沉积。Pd-P沉积物的厚度范围为约0.1-50微米，且更优选地为0.1-5微米的范围。这里的层204和层206提供了金属合金叠层(stack)。
在Pd-P沉积之后，经由浸渍镀方法镀覆金层208。金层的厚度范围是0.02-3.0微米，且更优选的范围是0.05-0.1微米。
UBM结构200的Ni-P和Pd-P层(204，206)可起到屏障层或可焊接/可粘结层的作用，或这些层可以提供这些功能的组合，这取决于层的厚度。金层208起到保护层或可焊接/可粘结层的作用，这取决于层的厚度。
催化剂层(未示出)可以在各随后的层的沉积中起到辅助作用，并且尽管催化剂层相对较薄，但它们的具体厚度可以根据沉积设备、技术、工艺参数以及所使用的材料质量而变化，其中所使用的材料质量可根据设备制造商而有所不同。可替代地，可以在Ni-P沉积后不沉积钯金属催化剂的情况下实施上述程序，因为根据所使用的条件和材料的质量，可以在Ni-P层的之上直接形成适合的Pd-P沉积层。
实施例2
如图2所示，按照实施例1中所述的程序形成UBM结构300，在沉积薄的牺牲层或催化剂层之后，实施Ni-P沉积，并实施Au层沉积步骤，但省去Pd-P层沉积步骤。这样，在Ni-P层204沉积后，经由浸渍镀方法沉积金层208。金层208的厚度范围是0.02-3.0微米，且更优选的范围是0.05-0.1微米。在该实施方式中，Ni-P层可起到屏障层或可焊接/可粘结层的作用，或提供这些功能的组合。金起到保护层或可焊接/可粘结层的作用，这取决于层的厚度。
实施例3
该实施例仅适用于具有Cu敷镀金属的器件。首先将钯金属催化剂沉积在Cu表面上(如上述实施例所述)，然后经由化学镀方法沉积P范围按重量计为0.1-10％且更优选0.1-5％的Pd-P层402，从而形成图3中示出的UBM结构400。Pd-P层402的厚度范围是0.1-50微米，且更优选的范围是0.1-5微米。
在沉积Pd-P层之后，利用浸渍镀方法沉积金层404。该金层的厚度范围为0.02-3微米，且更优选的范围是0.05-0.1微米。在该实施例中，Pd-P层起到屏障层和可焊接/可粘结层的作用。Au层起到保护层的作用。
实施例4
如图4所示，按照上述实施例3简单地形成UBM结构500。在该实施例中，在Pd-P层402上没有沉积其他的层。在该实施例中，Pd-P层起到屏障层和可焊接/可粘结层的作用，因为Pd-P不像Ni-P那样容易被氧化。
实施例5
如图5所示，按上述实施例1形成UBM结构600，然后经由化学镀方法在第一Ni-P层204之上沉积第二Ni-P层602。不同于第一层204的P的百分比，该第二Ni-P层602的P的百分比范围可以是按重量计1-16％，而更优选的范围是1-6％。第二Ni-P层602的厚度范围为0.1-50微米，且更优选为1-5微米的范围。在沉积第二Ni-P层602后，经由浸渍镀方法沉积金层604。该Au层604的厚度范围是0.02-3微米，且更优选为0.02-0.10微米的范围。在该实施方式中，该第一Ni-P层204起到屏障层的作用。第二Ni-P层602起到屏障层和可焊接层的作用。Au层604起到保护层的作用。
利用溅射沉积和镀覆形成UBM结构
以下描述了许多利用溅射沉积和镀覆技术形成UBM结构的非限制性实施例。在每一实施例中，开始时将具有良好导电性和粘附力的金属薄层经由溅射沉积工艺沉积在器件敷镀金属的表面上。这样的金属的实例包括钛、铝和TiW合金。
接着，将金属沉积在导电金属薄层之上，该金属优选起到屏障金属的作用并且选择其以与所选择的焊料合金是可润湿的。这样的金属的实例包括NiV、W、Ti、Pt、Ti/W合金以及Ti/W/N合金。在金属(例如NiV)迅速氧化的情况下，可以可选地沉积保护层以防止氧化，然后在随后的层沉积之前除去该保护层。
然后可在屏障金属上沉积诸如Pd-P、Ni-P，或NiV，或TiW的金属合金。在上述沉积之前，可以可选地在该屏障金属上沉积一薄牺牲层或催化剂层以促进金属合金的沉积，这取决于所使用的合金的类型。最后，沉积金层或银层。应该注意到，对于以下某些实施例(例如实施例10和实施例17)，前述的一些步骤可以省略。
实施例6
如图6所示，通过最初在器件敷镀金属202的表面上进行溅射沉积而沉积钛金属的薄粘附层802而形成UBM结构800。该器件敷镀金属202通常为铝、铜、或金。
接着，将起到屏障金属作用的镍钒屏障层804溅射在粘附层802上。然而，NiV层804在暴露于空气之后会迅速被氧化，从而有可能使得难以蚀刻材料并形成图案。这样，可利用可选的保护层(未示出)来防止NiV材料的氧化。例如，可利用溅射沉积而沉积铝薄层。在NiV表面上镀金属之前可将铝层除去。
可选地，在沉积NiV层804之后，或除去铝之后(如果利用铝层来防止氧化)，可经由浸渍镀方法在该NiV层804之上沉积钯金属催化剂薄层(未示出)。接着，经由化学镀方法沉积钯-磷(Pd-P)合金层806(如果使用的话，沉积在钯金属催化剂上，如果不使用催化剂，则沉积在NiV层之上)，其中P的范围为按重量计0.1-10％，更优选0.1-5％。Pd-P沉积物的厚度优选为在0.1-5微米之间。
随后，经由浸渍镀方法镀覆金层808。该金层的厚度范围为0.02-3.0微米，且优选在0.05-0.10微米之间。
在该实施方式中，NiV层804和Pd-P层806能够起到屏障层和/或可焊接层的作用，这取决于层的厚度。金层808起到保护层的作用。
实施例7
除了在上述初始金属沉积步骤中使用起到粘附层作用的铝层替代层802中的钛之外，根据实施例6的步骤形成类似于结构800的UBM结构。
实施例8
除了使用钨层替代屏障金属沉积步骤中的NiV层804之外，根据实施例6或实施例7的步骤形成类似于结构800的UBM结构。
实施例9
除了使用钛作为粘附层802和屏障层804之外，根据实施例6的步骤形成类似于结构800的UBM结构。
实施例10
如图7所示，利用上述实施例6中的初始金属沉积、屏障金属沉积、可选的保护层沉积、以及金层沉积步骤来形成UBM结构900。经由浸渍镀方法将金层808沉积在NiV层804之上(注意，在该实施例中Pd-P层806被省略)。Au层808的厚度范围为0.02-3.0微米，且优选在1-2微米之间。在该实施方式中，NiV层804起到屏障层和/或可焊接层的作用。Au层808起到保护层或可焊接/可粘结层的作用，这取决于该层的厚度。
实施例11
如图8所示，开始在根据实施例6中的初始金属沉积步骤之后形成UBM结构1000，其中钛层802被沉积在敷镀金属层202上。之后，经由溅射法将钨(W)层1002沉积在钛层802上。在沉积W层1002之后，经由化学镀方法沉积镍-磷(Ni-P)层1004，其中P范围为1-16％，且优选在7-9％之间。Ni-P层1004的厚度范围为0.1-50微米，且优选在1-5微米之间。在Ni-P沉积之后，经由浸渍镀方法镀覆金层808。该金层808的厚度范围为0.02-3.0微米，且优选在0.02-0.10微米之间。
实施例12
除了用溅射的NiV层替代实施例11的Ni-P层1004之外，类似于实施例11的UBM结构1000形成UBM结构。
实施例13
除了用溅射的Ti/W合金层替代实施例11的W层1002之外，类似于实施例11的UBM结构1000形成UBM结构。
实施例14
除了用溅射的Ti/W/N合金层替代实施例11的W层1002之外，类似于实施例11的UBM结构1000形成UBM结构。
实施例15
除了用溅射的Ti/W合金层替代实施例11的W层1002(在屏障金属沉积步骤中)，以及用溅射的NiV合金层替代Ni-P层1004(在合金沉积步骤中)之外，类似于实施例11的UBM结构1000形成UBM结构。
实施例16
除了用溅射的Ti/W/N合金层替代实施例11的W层1002(在屏障金属沉积步骤中)，以及用溅射的NiV合金层替代Ni-P层1004(在合金沉积步骤中)之外，类似于实施例11的UBM结构1000形成UBM结构。
实施例17
如图9所示，通过在器件敷镀金属202上初始沉积钛层802，然后经由化学镀或浸渍镀沉积金层808而形成UBM结构1100。该Au层808的厚度范围可以是例如约0.02-3微米。在该实施方式中，钛层802起到粘附层和屏障层的作用。金层808起到保护层或可焊接层的作用，这取决于该层的厚度。
实施例6至实施例17中的单独溅射的金属/合金层的厚度范围可以例如为约0.01-1微米，这取决于所需的功能。人们希望的是，该厚度应该在保证使与应力有关的剥离或裂缝最小化的同时足以形成良好的屏障。
作为在上述实施例中描述的化学镀和浸渍镀方法的一种替代方法，可以经由电解法来实施镀覆。化学镀和或浸渍镀可以通过电解法镀覆来实施。对于化学镀的合金，仅镀覆了合金的金属组分(例如Ni或Pd)(即，没有镀覆磷合金化元素)。电解镀覆法不需要催化剂层。也可以替代性地利用电解方法来镀覆实施例6至实施例17中描述的溅射的Ti和W层。
实施例18
如图10所示，经由溅射在器件的铜或铝敷镀金属202的表面上形成UBM结构1200。具体地，溅射金属的第一层1202是厚度范围为约50-10,000埃的TiW合金。溅射金属的第二层1204是厚度范围为约50-10,000埃的Ti/W/N合金。溅射金属的第三层1206是厚度范围为约50-10,000埃的TiW合金。溅射金属的第四层1208是厚度范围为约50-10,000埃的Au。
实施例19
除了不使用UBM结构1200的第一层TiW合金1202之外，该UBM结构类似于实施例18。
实施例20
除了不使用UBM结构1200的第三层TiW合金1206之外，该UBM结构类似于实施例18。
实施例21
除了不使用UBM结构1200的第一层和第三层TiW合金(1202，1206)之外，该UBM结构类似于实施例18。
实施例22
除了不使用UBM结构1200的第二层Ti/W/N合金和第三层TiW合金(1204，1206)之外，该UBM结构类似于实施例18。
实施例23
如图11所示，形成具有器件敷镀金属金层1302的UBM结构1300。在结构1300的形成过程中，在器件敷镀金属层1302之上溅射金层1304。层1304的厚度范围例如为约50-10,000埃。
实施例24
形成类似于UBM结构1300的UBM结构，其中在器件敷镀金属层1302之上没有溅射金属。器件敷镀金属层1302本身作为UBM结构，之后在其上形成焊料凸点。
实施例25
形成类似于实施例23的UBM结构1300的UBM结构，但是在溅射层1304之后，利用如化学镀、浸渍镀、或电解法将另外的金层(未示出)镀覆在层1304之上，厚度为约0.5-150微米之间。
焊料凸点的形成
UBM结构形成后，根据前述实施例中的一个或根据其他适合的制造方法，在该UBM结构上形成互连凸点(例如焊料凸点)。该焊料凸点以晶片级形成并通过例如回流(reflow)法或镀覆法而附着于该UBM结构。图12提供了焊料凸点结构1400的一般说明。尽管之后的实施例描述了利用焊料浆料印刷或镀覆方法来形成焊料凸点1402，但也可以利用预形成的焊球沉积(pre-formed soldersphere deposition)和其他适合方法在UBM结构上形成焊料凸点。
1、利用印刷浆料沉积形成的焊料凸点
在焊料凸点结构1400的第一实施方式中，通过原位(in-situ)或分离型板的开口经由印刷法来将由合适的高温合金制成的焊料浆料沉积在UBM结构上。然后将沉积的焊料浆料回流以形成焊料凸点1402。回流后得到的焊料凸点的高度例如是约1-500微米。在回流过程中，在焊料凸点与下面的UBM结构之间形成金属键。适合的焊料浆料合金包括以下实例：共晶的Au/Sn(80Au20Sn在280℃共晶)、共晶的铅/银(97.5Pb/2.5Ag在303℃共晶)、共晶的铅/银/锡(97.5Pb/1.5Ag/1Sn在309℃共晶)、高铅/锡(95Pb/5Sn，熔点314℃)、共晶金/锗(88Au12Ge在356℃共晶)、共晶的金/硅(97Au3Si在363℃共晶)、共晶的锌/铝(94Zn/6Al在381℃共晶)、以及共晶的锗/铝(55Ge/45Al在424℃共晶)。
2、利用镀覆沉积形成的焊料凸点
在凸点结构的第二实施方式中，可将适合的材料镀覆在铝或铜器件、硅衬底或其他衬底敷镀金属表面上，或镀覆在例如实施例1-10中所描述的任一种UBM结构上，以形成用于互连的凸点。在该实施方式中，材料的镀覆厚度为约1至500微米之间。该镀覆可以根据金属的类型和要镀覆的厚度经由化学镀、浸渍镀、或电解法来实施。可将凸点施加于器件或衬底。可以利用热-声(thermo-sonic)或热压模片固定技术，或利用回流技术(如果适用的话)将器件贴附于衬底。能够用于本实施方式的适合的镀覆金属或合金包括以下实例：金(Au)、银(Ag)、巴(Pd)、共晶的铅/银(97.5Pb/2.5Ag)、高铅/锡(95Pb/5Sn)、共晶的锌/铝(94Zn/6Al)，以及共晶的80Au20Sn。
在焊料凸点结构的第三实施方式中，采用如以上第二实施方式中的凸点材料。在该实施方式中，利用回流技术通过使用焊料合金将器件、硅衬底或其他衬底贴附于配合衬底。利用该方法，将熔点低于凸点材料的焊料合金材料施加在凸点表面或配合衬底贴附表面上。该材料作为较低熔点表面(与焊料凸点相比)，回流后将与凸点和配合衬底贴附表面粘结。这会使得在低于回流凸点必需的回流温度下形成可靠的连接。能够在该实施方式中使用的适合的焊料合金材料包括以下实例：共晶的铅/银(97.5Pb/2.5Ag在303℃共晶)、共晶的铅/银/锡(97.5Pb/1.5Ag/1Sn在309℃共晶)、高铅/锡(95Pb/5Sn，熔点314℃)、共晶的金/锗(88Au12Ge在356℃共晶)、共晶的金/硅(97Au3Si在363℃共晶)、共晶的锌/铝(94Zn/6Al在381℃共晶)、共晶的锗/铝(55Ge/45Al在424℃共晶)、以及共晶的金/锡(80Au20Sn在280℃共晶)。
3、利用预形成的焊球形成的焊料凸点
由已讨论过的任意凸点材料制成的预形成的焊球也能够被沉积在上文所述的任意UBM结构上，从而形成高温互连结构。
结论
根据特定的实施方式，上述互连凸点结构的应用实例包括：含有一个或多个互连的功率放大级的电子模块；对散热要求较高的BGA封装上的高密度、多级互连的集成电路电子器件；含有一层或多层互连的、嵌入电路的多级电路板；以及在正常操作条件下输出大输出功率水平和/或耗散大功率水平的发光二极管器件。上文描述的互连凸点结构通常可用于较大范围的各种电子封装应用，包括球栅阵列(BGA)、芯片级封装(CSP)以及倒装芯片结构。
尽管已经参照示例性实施方式描述了本发明披露内容，但这样的描述仅是出于举例说明的目的，而不是意在限制本发明的范围。在不背离由权利要求所限定的本发明的真实精神和范围的前提下，本领域技术人员可对所述的实施方式进行各种修改和改变。本发明由所附权利要求所限定。

Claims (25)

1.一种互连凸点结构，包括：
材料的合金层，所述材料是Pd-P；
金层，位于所述合金层之上；以及
凸点，位于所述金层之上，所述凸点的材料选自由PbSbGa、PbSb、AuGe、AuSi、AuSn、ZnAl、CdAg、GeAl、Au、Ag、Pd、Pb、Ge、Sn、Si、Zn、Al及它们的组合组成的组。
2.根据权利要求1所述的结构，其中，所述凸点是焊料材料层。
3.根据权利要求1所述的结构，其中，所述凸点是基本上纯的金属互连凸点。
4.根据权利要求1所述的结构，其中，所述凸点是焊料凸点。
5.根据权利要求1所述的结构，进一步包括位于所述合金层下面的Pd催化剂层。
6.根据权利要求1所述的结构，其中，所述凸点材料为98Pb1.2Sb0.8Ga、98Pb2Sb、98.5Pb1.5Sb、88Au12Ge、97Au3Si、94Zn6Al、95Cd5Ag、55Ge45Al，或80Au20Sn。
7.一种互连凸点结构，包括：
第一金属层，其材料选自由Ti、Al和TiW组成的组；
第二金属层，位于所述第一金属层之上，其材料选自由Au和Ag组成的组；以及
凸点，位于所述第二金属层之上，所述凸点的材料选自由PbSbGa、PbSb、AuGe、AuSi、AuSn、ZnAl、CdAg、GeAl、Au、Ag、Pd、Pb、Ge、Sn、Si、Zn、Al及它们的组合组成的组，
其中所述互连凸点结构进一步包括合金层，所述合金层位于所述第一金属层与所述第二金属层之间，所述合金层的材料为Pd-P。
8.根据权利要求7所述的结构，进一步包括第三金属层，其位于所述第一金属层与所述合金层之间，所述第三金属层的材料选自由NiV、W、Ti、TiW、Ti/W/N和Pt组成的组。
9.根据权利要求7所述的结构，其中，所述凸点材料为98Pb1.2Sb0.8Ga、98Pb2Sb、98.5Pb1.5Sb、88Au12Ge、97Au3Si、94Zn6Al、95Cd5Ag、55Ge45Al、或80Au20Sn。
10.一种互连凸点结构，包括：
第一金属层，其材料选自由NiV、W、Ti/W/N和Pt组成的组；
第二金属层，位于所述第一金属层之上，其材料选自由Au和Ag组成的组；以及
凸点，位于所述第二金属层之上，所述凸点的材料选自由PbSbGa、PbSb、AuGe、AuSi、AuSn、ZnAl、CdAg、GeAl、Au、Ag、Pd、Pb、Ge、Sn、Si、Zn、Al及它们的组合组成的组，
其中所述互连凸点结构进一步包括合金层，所述合金层位于所述第一金属层与所述第二金属层之间，所述合金层的材料为Pd-P。
11.根据权利要求10所述的结构，其中，所述凸点材料为98Pb1.2Sb0.8Ga、98Pb2Sb、98.5Pb1.5Sb、88Au12Ge、97Au3Si、94Zn6Al、95Cd5Ag、55Ge45Al或80Au20Sn。
12.一种包括互连凸点结构的LED器件，其中，所述互连凸点结构包括：
Pd-P的合金层；
凸点，位于所述合金层之上，所述凸点的材料选自由PbSbGa、PbSb、AuGe、AuSi、AuSn、ZnAl、CdAg、GeAl、Au、Ag、Pd、Pb、Ge、Sn、Si、Zn、Al及它们的组合组成的组，以及
金层，设置在所述合金层和所述凸点之间；
其中，所述互连凸点结构可在高于250摄氏度的温度下操作。
13.根据权利要求12所述的器件，其中，所述金层的厚度为约0.02至3.0微米。
14.根据权利要求11所述的器件，进一步包括接触垫，所述接触垫位于所述互连凸点结构下面，包含Al或Cu。
15.根据权利要求14所述的器件，其中，所述接触垫为Cu且所述LED器件进一步包括位于所述接触垫上的Pd催化剂层。
16.根据权利要求12所述的器件，其中，所述合金层的厚度为约0.1至50微米。
17.根据权利要求12所述的器件，其中，所述合金层包含的P的范围为按重量计约0.1％至10％。
18.根据权利要求14所述的器件，其中，所述接触垫为Cu，并且进一步包含位于所述接触垫与所述合金层之间的Pd金属催化剂薄层。
19.根据权利要求12所述的器件，其中，所述互连凸点结构是利用以下工艺中的一种或多种形成的：印刷浆料沉积、镀覆沉积、预形成焊球布置、或利用不同熔点的焊料来处理。
20.根据权利要求19所述的器件，其中，所述凸点材料的高度为约1至500微米之间。
21.一种用于电子封装的互连凸点结构，包括：
金属合金叠层，包括一层或多层Pd-P或者一层或多层Pd-P和Ni-P；
金属层，位于所述金属合金叠层之上；以及
互连凸点，位于所述金属层之上。
22.根据权利要求21所述的结构，其中，所述互连凸点包含金和/或银，并且进一步包含锗。
23.根据权利要求21所述的结构，其中，所述金属层包含Au。
24.根据权利要求21所述的结构，其中，所述金属合金叠层的每一层包含按重量计约1％至16％的磷。
25.根据权利要求21所述的结构，其中，所述金属合金叠层以晶片级形成在半导体衬底之上。
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